JP2005033198A5 - - Google Patents

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Publication number
JP2005033198A5
JP2005033198A5 JP2004193115A JP2004193115A JP2005033198A5 JP 2005033198 A5 JP2005033198 A5 JP 2005033198A5 JP 2004193115 A JP2004193115 A JP 2004193115A JP 2004193115 A JP2004193115 A JP 2004193115A JP 2005033198 A5 JP2005033198 A5 JP 2005033198A5
Authority
JP
Japan
Prior art keywords
layer
electronic device
substantially pure
angstroms
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004193115A
Other languages
English (en)
Japanese (ja)
Other versions
JP4729661B2 (ja
JP2005033198A (ja
Filing date
Publication date
Priority claimed from TW92119085A external-priority patent/TWI232541B/zh
Priority claimed from TW93103832A external-priority patent/TWI246874B/zh
Application filed filed Critical
Publication of JP2005033198A publication Critical patent/JP2005033198A/ja
Publication of JP2005033198A5 publication Critical patent/JP2005033198A5/ja
Application granted granted Critical
Publication of JP4729661B2 publication Critical patent/JP4729661B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004193115A 2003-07-11 2004-06-30 ヒロックが無いアルミニウム層及びその形成方法 Expired - Fee Related JP4729661B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
TW92119085A TWI232541B (en) 2003-07-11 2003-07-11 Aluminum hillock-free metal layer, electronic part, and thin flat transistor and its manufacturing method
TW92119085 2003-07-11
TW93103832 2004-02-17
TW93103832A TWI246874B (en) 2004-02-17 2004-02-17 Hillock-free aluminum metal layer and method of forming the same

Publications (3)

Publication Number Publication Date
JP2005033198A JP2005033198A (ja) 2005-02-03
JP2005033198A5 true JP2005033198A5 (enExample) 2007-08-02
JP4729661B2 JP4729661B2 (ja) 2011-07-20

Family

ID=33566914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004193115A Expired - Fee Related JP4729661B2 (ja) 2003-07-11 2004-06-30 ヒロックが無いアルミニウム層及びその形成方法

Country Status (3)

Country Link
US (2) US7235310B2 (enExample)
JP (1) JP4729661B2 (enExample)
KR (1) KR101070761B1 (enExample)

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US7843632B2 (en) * 2006-08-16 2010-11-30 Cymer, Inc. EUV optics
JP4729661B2 (ja) * 2003-07-11 2011-07-20 奇美電子股▲ふん▼有限公司 ヒロックが無いアルミニウム層及びその形成方法
JP2005062802A (ja) * 2003-07-28 2005-03-10 Advanced Display Inc 薄膜トランジスタアレイ基板の製法
TWI255363B (en) * 2005-02-04 2006-05-21 Quanta Display Inc Liquid crystal display
KR101555707B1 (ko) * 2005-04-18 2015-09-25 가부시키가이샤 니콘 노광 장치 및 노광 방법, 그리고 디바이스 제조 방법
US8526137B2 (en) 2010-04-16 2013-09-03 International Business Machines Corporation Head comprising a crystalline alumina layer
CN101887893B (zh) * 2010-06-10 2012-01-11 深超光电（深圳）有限公司 一种薄膜晶体管阵列基板及其制造方法
TWI471946B (zh) * 2010-11-17 2015-02-01 群創光電股份有限公司 薄膜電晶體
CN102477531B (zh) * 2010-11-26 2015-03-25 鸿富锦精密工业（深圳）有限公司 被覆件及其制造方法
KR101224282B1 (ko) 2011-03-04 2013-01-21 주식회사 엘지화학 전도성 구조체 및 이의 제조방법
US9087839B2 (en) 2013-03-29 2015-07-21 International Business Machines Corporation Semiconductor structures with metal lines
CN103779358A (zh) * 2014-01-27 2014-05-07 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示装置
WO2015174678A1 (ko) * 2014-05-12 2015-11-19 주식회사 엘지화학 전도성 구조체 및 이의 제조방법
CN105077163A (zh) * 2015-07-19 2015-11-25 中盐榆林盐化有限公司 一种富硒盐及其制备方法
JP2017092330A (ja) * 2015-11-13 2017-05-25 株式会社神戸製鋼所 デバイス用配線膜
CN107464830A (zh) * 2017-07-18 2017-12-12 武汉华星光电半导体显示技术有限公司 阵列基板及制作方法、显示面板
KR102502646B1 (ko) * 2018-06-27 2023-02-24 삼성디스플레이 주식회사 표시패널 및 그 제조방법

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US4206472A (en) * 1977-12-27 1980-06-03 International Business Machines Corporation Thin film structures and method for fabricating same
JPS6380550A (ja) * 1986-09-24 1988-04-11 Nikon Corp 半導体装置の配線前駆体
US5580800A (en) * 1993-03-22 1996-12-03 Semiconductor Energy Laboratory Co., Ltd. Method of patterning aluminum containing group IIIb Element
US5518805A (en) * 1994-04-28 1996-05-21 Xerox Corporation Hillock-free multilayer metal lines for high performance thin film structures
US5625233A (en) * 1995-01-13 1997-04-29 Ibm Corporation Thin film multi-layer oxygen diffusion barrier consisting of refractory metal, refractory metal aluminide, and aluminum oxide
KR0186206B1 (ko) * 1995-11-21 1999-05-01 구자홍 액정표시소자 및 그의 제조방법
JPH10199827A (ja) * 1996-12-28 1998-07-31 Casio Comput Co Ltd 配線構造及びそれを用いた表示装置
TW574394B (en) * 1997-07-15 2004-02-01 Micron Technology Inc Method of using hydrogen and oxygen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom
JP3916334B2 (ja) 1999-01-13 2007-05-16 シャープ株式会社 薄膜トランジスタ
US6537427B1 (en) 1999-02-04 2003-03-25 Micron Technology, Inc. Deposition of smooth aluminum films
US6140701A (en) * 1999-08-31 2000-10-31 Micron Technology, Inc. Suppression of hillock formation in thin aluminum films
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JP2002151810A (ja) * 2000-11-10 2002-05-24 Denso Corp 回路基板およびその製造方法
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JP2002368202A (ja) * 2001-06-07 2002-12-20 Canon Inc 半導体装置、撮像装置、放射線検出装置及び放射線検出システム
KR100829556B1 (ko) * 2002-05-29 2008-05-14 삼성전자주식회사 자기 저항 램 및 그의 제조방법
KR100685953B1 (ko) * 2002-08-20 2007-02-23 엘지.필립스 엘시디 주식회사 액정표시장치용 배선의 형성방법
TWI233178B (en) * 2003-01-16 2005-05-21 Chi Mei Optoelectronics Corp Gate layer having no hillock and its manufacturing method
JP4729661B2 (ja) * 2003-07-11 2011-07-20 奇美電子股▲ふん▼有限公司 ヒロックが無いアルミニウム層及びその形成方法
US6984857B2 (en) * 2003-07-16 2006-01-10 Texas Instruments Incorporated Hydrogen barrier for protecting ferroelectric capacitors in a semiconductor device and methods for fabricating the same
US6982448B2 (en) * 2004-03-18 2006-01-03 Texas Instruments Incorporated Ferroelectric capacitor hydrogen barriers and methods for fabricating the same
JP2006032552A (ja) * 2004-07-14 2006-02-02 Toshiba Corp 窒化物含有半導体装置
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JP2009071242A (ja) * 2007-09-18 2009-04-02 Seiko Epson Corp 半導体装置及びその製造方法

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