JP2004506814A5 - - Google Patents
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- Publication number
- JP2004506814A5 JP2004506814A5 JP2002519698A JP2002519698A JP2004506814A5 JP 2004506814 A5 JP2004506814 A5 JP 2004506814A5 JP 2002519698 A JP2002519698 A JP 2002519698A JP 2002519698 A JP2002519698 A JP 2002519698A JP 2004506814 A5 JP2004506814 A5 JP 2004506814A5
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- copper
- sputtering material
- metal
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000463 material Substances 0.000 claims 38
- 238000004544 sputter deposition Methods 0.000 claims 25
- 239000010936 titanium Substances 0.000 claims 19
- 238000005275 alloying Methods 0.000 claims 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 13
- 229910052802 copper Inorganic materials 0.000 claims 13
- 239000010949 copper Substances 0.000 claims 13
- 229910052751 metal Inorganic materials 0.000 claims 13
- 239000002184 metal Substances 0.000 claims 13
- 229910052719 titanium Inorganic materials 0.000 claims 13
- 239000010409 thin film Substances 0.000 claims 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 9
- 229910045601 alloy Inorganic materials 0.000 claims 8
- 239000000956 alloy Substances 0.000 claims 8
- 229910052782 aluminium Inorganic materials 0.000 claims 7
- 238000009792 diffusion process Methods 0.000 claims 7
- 229910052692 Dysprosium Inorganic materials 0.000 claims 6
- 229910052691 Erbium Inorganic materials 0.000 claims 6
- 229910052688 Gadolinium Inorganic materials 0.000 claims 6
- 229910052689 Holmium Inorganic materials 0.000 claims 6
- 229910052779 Neodymium Inorganic materials 0.000 claims 6
- 229910052777 Praseodymium Inorganic materials 0.000 claims 6
- 229910052772 Samarium Inorganic materials 0.000 claims 6
- 229910052788 barium Inorganic materials 0.000 claims 6
- 229910052790 beryllium Inorganic materials 0.000 claims 6
- 229910052796 boron Inorganic materials 0.000 claims 6
- 229910052792 caesium Inorganic materials 0.000 claims 6
- 229910052791 calcium Inorganic materials 0.000 claims 6
- 229910052748 manganese Inorganic materials 0.000 claims 6
- 230000008018 melting Effects 0.000 claims 6
- 238000002844 melting Methods 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 6
- 229910052727 yttrium Inorganic materials 0.000 claims 6
- 229910052726 zirconium Inorganic materials 0.000 claims 6
- 229910052799 carbon Inorganic materials 0.000 claims 5
- 229910052735 hafnium Inorganic materials 0.000 claims 5
- 229910052746 lanthanum Inorganic materials 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 230000004888 barrier function Effects 0.000 claims 4
- 229910052804 chromium Inorganic materials 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 229910052720 vanadium Inorganic materials 0.000 claims 4
- 229910052769 Ytterbium Inorganic materials 0.000 claims 3
- 229910052742 iron Inorganic materials 0.000 claims 3
- 229910052750 molybdenum Inorganic materials 0.000 claims 3
- 229910052759 nickel Inorganic materials 0.000 claims 3
- 229910052698 phosphorus Inorganic materials 0.000 claims 3
- 229910052706 scandium Inorganic materials 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- 229910052717 sulfur Inorganic materials 0.000 claims 3
- 229910052715 tantalum Inorganic materials 0.000 claims 3
- 229910052684 Cerium Inorganic materials 0.000 claims 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910002056 binary alloy Inorganic materials 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 2
- 239000004332 silver Substances 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 238000004377 microelectronic Methods 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 239000012299 nitrogen atmosphere Substances 0.000 claims 1
- 238000005477 sputtering target Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22551800P | 2000-08-15 | 2000-08-15 | |
| PCT/US2001/017996 WO2002014576A1 (en) | 2000-08-15 | 2001-05-31 | Sputtering target |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004506814A JP2004506814A (ja) | 2004-03-04 |
| JP2004506814A5 true JP2004506814A5 (enExample) | 2005-02-24 |
Family
ID=22845198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002519698A Withdrawn JP2004506814A (ja) | 2000-08-15 | 2001-05-31 | スパッタリングターゲット |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1309736A1 (enExample) |
| JP (1) | JP2004506814A (enExample) |
| KR (1) | KR20030020986A (enExample) |
| CN (1) | CN1447864A (enExample) |
| AU (1) | AU2001275184A1 (enExample) |
| WO (1) | WO2002014576A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002088413A2 (en) * | 2001-05-01 | 2002-11-07 | Honeywell International Inc. | Sputter targets comprising ti and zr |
| US20040016635A1 (en) * | 2002-07-19 | 2004-01-29 | Ford Robert B. | Monolithic sputtering target assembly |
| CN102094172B (zh) * | 2010-12-03 | 2014-01-01 | 无锡润鹏复合新材料有限公司 | 一种TiWN/MoS2复合薄膜的制备方法 |
| CN102000702B (zh) * | 2010-12-21 | 2012-09-26 | 重庆大学 | 一种高纯钽溅射靶材的加工工艺 |
| JP6274026B2 (ja) | 2013-07-31 | 2018-02-07 | 三菱マテリアル株式会社 | 銅合金スパッタリングターゲット及び銅合金スパッタリングターゲットの製造方法 |
| KR20160049255A (ko) * | 2014-10-27 | 2016-05-09 | 한국생산기술연구원 | 스퍼터링 타겟용 합금 및 이로 이루어진 스퍼터링 타겟 |
| US20180305805A1 (en) * | 2016-03-25 | 2018-10-25 | Jx Nippon Mining & Metals Corporation | Ti-Ta ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR |
| JP6440866B2 (ja) | 2016-03-25 | 2018-12-19 | Ｊｘ金属株式会社 | Ｔｉ−Ｎｂ合金スパッタリングターゲット及びその製造方法 |
| CN111910101B (zh) * | 2020-07-14 | 2021-08-03 | 中南大学 | 一种高纯度高强高导铜基靶材及其制备方法 |
| CN112063891B (zh) * | 2020-09-29 | 2022-02-15 | 中国科学院金属研究所 | 一种高热稳定性等轴纳米晶Ti-Zr-Cr合金及其制备方法 |
| CN116287861A (zh) * | 2021-12-24 | 2023-06-23 | 宝鸡市亨信稀有金属有限公司 | 一种钛钨合金靶板及其制备方法和应用 |
| CN114262872B (zh) * | 2021-12-31 | 2024-03-08 | 北京安泰六九新材料科技有限公司 | 一种铬铝硼合金复合靶材及其制备方法 |
| CN114561622B (zh) * | 2022-01-14 | 2024-04-26 | 西安理工大学 | 梯度组织Ti-Nb合金薄膜及其制备方法 |
| CN115522102B (zh) * | 2022-10-12 | 2023-07-18 | 苏州大学 | 一种铝合金导电材料及其制备方法 |
| CN117144308B (zh) * | 2023-09-12 | 2025-02-07 | 燕山大学 | 一种ds连轧制备钽靶坯的方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2585730B1 (fr) * | 1985-08-01 | 1987-10-09 | Centre Nat Rech Scient | Procede de depot de metaux en couche mince sur un substrat non metallique, avec depot intermediaire d'hydrures par pulverisation cathodique reactive |
| JPH0715990B2 (ja) * | 1985-09-11 | 1995-02-22 | 三菱電機株式会社 | 半導体装置 |
| GB2202237A (en) * | 1987-03-12 | 1988-09-21 | Vac Tec Syst | Cathodic arc plasma deposition of hard coatings |
| JP2860064B2 (ja) * | 1994-10-17 | 1999-02-24 | 株式会社神戸製鋼所 | Ｔｉ−Ａｌ合金ターゲット材の製造方法 |
| JPH1174348A (ja) * | 1996-08-16 | 1999-03-16 | Asahi Chem Ind Co Ltd | 半導体装置およびその製造方法 |
| US5939788A (en) * | 1998-03-11 | 1999-08-17 | Micron Technology, Inc. | Copper diffusion barrier, aluminum wetting layer and improved methods for filling openings in silicon substrates with cooper |
| JP3104750B2 (ja) * | 1998-06-17 | 2000-10-30 | 日本電気株式会社 | 半導体装置の製造方法 |
| US6184550B1 (en) * | 1998-08-28 | 2001-02-06 | Advanced Technology Materials, Inc. | Ternary nitride-carbide barrier layers |
-
2001
- 2001-05-31 KR KR10-2003-7002169A patent/KR20030020986A/ko not_active Ceased
- 2001-05-31 AU AU2001275184A patent/AU2001275184A1/en not_active Abandoned
- 2001-05-31 JP JP2002519698A patent/JP2004506814A/ja not_active Withdrawn
- 2001-05-31 WO PCT/US2001/017996 patent/WO2002014576A1/en not_active Ceased
- 2001-05-31 EP EP01941866A patent/EP1309736A1/en not_active Withdrawn
- 2001-05-31 CN CN01814249A patent/CN1447864A/zh active Pending
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