JP2004506814A - スパッタリングターゲット - Google Patents

スパッタリングターゲット Download PDF

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Publication number
JP2004506814A
JP2004506814A JP2002519698A JP2002519698A JP2004506814A JP 2004506814 A JP2004506814 A JP 2004506814A JP 2002519698 A JP2002519698 A JP 2002519698A JP 2002519698 A JP2002519698 A JP 2002519698A JP 2004506814 A JP2004506814 A JP 2004506814A
Authority
JP
Japan
Prior art keywords
alloying elements
sputtering target
thin film
copper
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002519698A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004506814A5 (enExample
Inventor
リ，ジャンシン
ターナー，スティーヴン
姚　力　軍
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of JP2004506814A publication Critical patent/JP2004506814A/ja
Publication of JP2004506814A5 publication Critical patent/JP2004506814A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846—Layer combinations
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76864—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2002519698A 2000-08-15 2001-05-31 スパッタリングターゲット Withdrawn JP2004506814A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US22551800P 2000-08-15 2000-08-15
PCT/US2001/017996 WO2002014576A1 (en) 2000-08-15 2001-05-31 Sputtering target

Publications (2)

Publication Number Publication Date
JP2004506814A true JP2004506814A (ja) 2004-03-04
JP2004506814A5 JP2004506814A5 (enExample) 2005-02-24

Family

ID=22845198

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002519698A Withdrawn JP2004506814A (ja) 2000-08-15 2001-05-31 スパッタリングターゲット

Country Status (6)

Country Link
EP (1) EP1309736A1 (enExample)
JP (1) JP2004506814A (enExample)
KR (1) KR20030020986A (enExample)
CN (1) CN1447864A (enExample)
AU (1) AU2001275184A1 (enExample)
WO (1) WO2002014576A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180110111A (ko) 2016-03-25 2018-10-08 제이엑스금속주식회사 Ti-Nb 합금 스퍼터링 타깃 및 그 제조 방법

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002088413A2 (en) * 2001-05-01 2002-11-07 Honeywell International Inc. Sputter targets comprising ti and zr
US20040016635A1 (en) * 2002-07-19 2004-01-29 Ford Robert B. Monolithic sputtering target assembly
CN102094172B (zh) * 2010-12-03 2014-01-01 无锡润鹏复合新材料有限公司 一种TiWN/MoS2复合薄膜的制备方法
CN102000702B (zh) * 2010-12-21 2012-09-26 重庆大学 一种高纯钽溅射靶材的加工工艺
JP6274026B2 (ja) 2013-07-31 2018-02-07 三菱マテリアル株式会社 銅合金スパッタリングターゲット及び銅合金スパッタリングターゲットの製造方法
KR20160049255A (ko) * 2014-10-27 2016-05-09 한국생산기술연구원 스퍼터링 타겟용 합금 및 이로 이루어진 스퍼터링 타겟
US20180305805A1 (en) * 2016-03-25 2018-10-25 Jx Nippon Mining & Metals Corporation Ti-Ta ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR
CN111910101B (zh) * 2020-07-14 2021-08-03 中南大学 一种高纯度高强高导铜基靶材及其制备方法
CN112063891B (zh) * 2020-09-29 2022-02-15 中国科学院金属研究所 一种高热稳定性等轴纳米晶Ti-Zr-Cr合金及其制备方法
CN116287861A (zh) * 2021-12-24 2023-06-23 宝鸡市亨信稀有金属有限公司 一种钛钨合金靶板及其制备方法和应用
CN114262872B (zh) * 2021-12-31 2024-03-08 北京安泰六九新材料科技有限公司 一种铬铝硼合金复合靶材及其制备方法
CN114561622B (zh) * 2022-01-14 2024-04-26 西安理工大学 梯度组织Ti-Nb合金薄膜及其制备方法
CN115522102B (zh) * 2022-10-12 2023-07-18 苏州大学 一种铝合金导电材料及其制备方法
CN117144308B (zh) * 2023-09-12 2025-02-07 燕山大学 一种ds连轧制备钽靶坯的方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2585730B1 (fr) * 1985-08-01 1987-10-09 Centre Nat Rech Scient Procede de depot de metaux en couche mince sur un substrat non metallique, avec depot intermediaire d'hydrures par pulverisation cathodique reactive
JPH0715990B2 (ja) * 1985-09-11 1995-02-22 三菱電機株式会社 半導体装置
GB2202237A (en) * 1987-03-12 1988-09-21 Vac Tec Syst Cathodic arc plasma deposition of hard coatings
JP2860064B2 (ja) * 1994-10-17 1999-02-24 株式会社神戸製鋼所 Ｔｉ−Ａｌ合金ターゲット材の製造方法
JPH1174348A (ja) * 1996-08-16 1999-03-16 Asahi Chem Ind Co Ltd 半導体装置およびその製造方法
US5939788A (en) * 1998-03-11 1999-08-17 Micron Technology, Inc. Copper diffusion barrier, aluminum wetting layer and improved methods for filling openings in silicon substrates with cooper
JP3104750B2 (ja) * 1998-06-17 2000-10-30 日本電気株式会社 半導体装置の製造方法
US6184550B1 (en) * 1998-08-28 2001-02-06 Advanced Technology Materials, Inc. Ternary nitride-carbide barrier layers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180110111A (ko) 2016-03-25 2018-10-08 제이엑스금속주식회사 Ti-Nb 합금 스퍼터링 타깃 및 그 제조 방법

Also Published As

Publication number Publication date
EP1309736A1 (en) 2003-05-14
KR20030020986A (ko) 2003-03-10
WO2002014576A1 (en) 2002-02-21
CN1447864A (zh) 2003-10-08
AU2001275184A1 (en) 2002-02-25

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A300 Application deemed to be withdrawn because no request for examination was validly filed

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Effective date: 20080805