CN1447864A - 溅射靶 - Google Patents

溅射靶 Download PDF

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Publication number
CN1447864A
CN1447864A CN01814249A CN01814249A CN1447864A CN 1447864 A CN1447864 A CN 1447864A CN 01814249 A CN01814249 A CN 01814249A CN 01814249 A CN01814249 A CN 01814249A CN 1447864 A CN1447864 A CN 1447864A
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CN
China
Prior art keywords
alloying elements
film
sputtering target
copper
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN01814249A
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English (en)
Chinese (zh)
Inventor
J·李
S·图尔纳
L·尧
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of CN1447864A publication Critical patent/CN1447864A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846—Layer combinations
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76864—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
CN01814249A 2000-08-15 2001-05-31 溅射靶 Pending CN1447864A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US22551800P 2000-08-15 2000-08-15
US60/225518 2000-08-15

Publications (1)

Publication Number Publication Date
CN1447864A true CN1447864A (zh) 2003-10-08

Family

ID=22845198

Family Applications (1)

Application Number Title Priority Date Filing Date
CN01814249A Pending CN1447864A (zh) 2000-08-15 2001-05-31 溅射靶

Country Status (6)

Country Link
EP (1) EP1309736A1 (enExample)
JP (1) JP2004506814A (enExample)
KR (1) KR20030020986A (enExample)
CN (1) CN1447864A (enExample)
AU (1) AU2001275184A1 (enExample)
WO (1) WO2002014576A1 (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102094172A (zh) * 2010-12-03 2011-06-15 无锡润鹏复合新材料有限公司 一种TiWN/MoS2复合薄膜的制备方法
CN104342574A (zh) * 2013-07-31 2015-02-11 三菱综合材料株式会社 铜合金溅射靶及铜合金溅射靶的制造方法
CN108291295A (zh) * 2016-03-25 2018-07-17 捷客斯金属株式会社 Ti-Ta合金溅射靶及其制造方法
CN111910101A (zh) * 2020-07-14 2020-11-10 中南大学 一种高纯度高强高导铜基靶材及其制备方法
CN112063891A (zh) * 2020-09-29 2020-12-11 中国科学院金属研究所 一种高热稳定性等轴纳米晶Ti-Zr-Cr合金及其制备方法
CN114262872A (zh) * 2021-12-31 2022-04-01 北京安泰六九新材料科技有限公司 一种铬铝硼合金复合靶材及其制备方法
CN114480915A (zh) * 2021-12-24 2022-05-13 宝鸡市亨信稀有金属有限公司 钛钨合金靶板的加工工艺
CN115522102A (zh) * 2022-10-12 2022-12-27 苏州大学 一种铝合金导电材料及其制备方法
CN117144308A (zh) * 2023-09-12 2023-12-01 燕山大学 一种ds连轧制备钽靶坯的方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002088413A2 (en) * 2001-05-01 2002-11-07 Honeywell International Inc. Sputter targets comprising ti and zr
US20040016635A1 (en) * 2002-07-19 2004-01-29 Ford Robert B. Monolithic sputtering target assembly
CN102000702B (zh) * 2010-12-21 2012-09-26 重庆大学 一种高纯钽溅射靶材的加工工艺
KR20160049255A (ko) * 2014-10-27 2016-05-09 한국생산기술연구원 스퍼터링 타겟용 합금 및 이로 이루어진 스퍼터링 타겟
JP6440866B2 (ja) 2016-03-25 2018-12-19 Ｊｘ金属株式会社 Ｔｉ−Ｎｂ合金スパッタリングターゲット及びその製造方法
CN114561622B (zh) * 2022-01-14 2024-04-26 西安理工大学 梯度组织Ti-Nb合金薄膜及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2585730B1 (fr) * 1985-08-01 1987-10-09 Centre Nat Rech Scient Procede de depot de metaux en couche mince sur un substrat non metallique, avec depot intermediaire d'hydrures par pulverisation cathodique reactive
JPH0715990B2 (ja) * 1985-09-11 1995-02-22 三菱電機株式会社 半導体装置
GB2202237A (en) * 1987-03-12 1988-09-21 Vac Tec Syst Cathodic arc plasma deposition of hard coatings
JP2860064B2 (ja) * 1994-10-17 1999-02-24 株式会社神戸製鋼所 Ｔｉ−Ａｌ合金ターゲット材の製造方法
JPH1174348A (ja) * 1996-08-16 1999-03-16 Asahi Chem Ind Co Ltd 半導体装置およびその製造方法
US5939788A (en) * 1998-03-11 1999-08-17 Micron Technology, Inc. Copper diffusion barrier, aluminum wetting layer and improved methods for filling openings in silicon substrates with cooper
JP3104750B2 (ja) * 1998-06-17 2000-10-30 日本電気株式会社 半導体装置の製造方法
US6184550B1 (en) * 1998-08-28 2001-02-06 Advanced Technology Materials, Inc. Ternary nitride-carbide barrier layers

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102094172B (zh) * 2010-12-03 2014-01-01 无锡润鹏复合新材料有限公司 一种TiWN/MoS2复合薄膜的制备方法
CN102094172A (zh) * 2010-12-03 2011-06-15 无锡润鹏复合新材料有限公司 一种TiWN/MoS2复合薄膜的制备方法
CN104342574A (zh) * 2013-07-31 2015-02-11 三菱综合材料株式会社 铜合金溅射靶及铜合金溅射靶的制造方法
CN104342574B (zh) * 2013-07-31 2017-10-31 三菱综合材料株式会社 铜合金溅射靶及铜合金溅射靶的制造方法
US10062552B2 (en) 2013-07-31 2018-08-28 Mitsubishi Materials Corporation Copper alloy sputtering target and manufacturing method of copper alloy sputtering target
US10770274B2 (en) 2013-07-31 2020-09-08 Mitsubishi Materials Corporation Copper alloy sputtering target and manufacturing method of copper alloy sputtering target
CN108291295B (zh) * 2016-03-25 2021-03-16 捷客斯金属株式会社 Ti-Ta合金溅射靶及其制造方法
CN108291295A (zh) * 2016-03-25 2018-07-17 捷客斯金属株式会社 Ti-Ta合金溅射靶及其制造方法
CN111910101A (zh) * 2020-07-14 2020-11-10 中南大学 一种高纯度高强高导铜基靶材及其制备方法
CN112063891A (zh) * 2020-09-29 2020-12-11 中国科学院金属研究所 一种高热稳定性等轴纳米晶Ti-Zr-Cr合金及其制备方法
CN112063891B (zh) * 2020-09-29 2022-02-15 中国科学院金属研究所 一种高热稳定性等轴纳米晶Ti-Zr-Cr合金及其制备方法
CN114480915A (zh) * 2021-12-24 2022-05-13 宝鸡市亨信稀有金属有限公司 钛钨合金靶板的加工工艺
CN116287861A (zh) * 2021-12-24 2023-06-23 宝鸡市亨信稀有金属有限公司 一种钛钨合金靶板及其制备方法和应用
CN114262872A (zh) * 2021-12-31 2022-04-01 北京安泰六九新材料科技有限公司 一种铬铝硼合金复合靶材及其制备方法
CN114262872B (zh) * 2021-12-31 2024-03-08 北京安泰六九新材料科技有限公司 一种铬铝硼合金复合靶材及其制备方法
CN115522102A (zh) * 2022-10-12 2022-12-27 苏州大学 一种铝合金导电材料及其制备方法
CN117144308A (zh) * 2023-09-12 2023-12-01 燕山大学 一种ds连轧制备钽靶坯的方法

Also Published As

Publication number Publication date
EP1309736A1 (en) 2003-05-14
KR20030020986A (ko) 2003-03-10
WO2002014576A1 (en) 2002-02-21
JP2004506814A (ja) 2004-03-04
AU2001275184A1 (en) 2002-02-25

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