CN1447864A - 溅射靶 - Google Patents

溅射靶 Download PDF

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Publication number
CN1447864A
CN1447864A CN01814249A CN01814249A CN1447864A CN 1447864 A CN1447864 A CN 1447864A CN 01814249 A CN01814249 A CN 01814249A CN 01814249 A CN01814249 A CN 01814249A CN 1447864 A CN1447864 A CN 1447864A
Authority
CN
China
Prior art keywords
alloying elements
film
sputtering target
copper
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN01814249A
Other languages
English (en)
Chinese (zh)
Inventor
J·李
S·图尔纳
L·尧
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of CN1447864A publication Critical patent/CN1447864A/zh
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/035—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • H10W20/0526—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein by thermal treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
CN01814249A 2000-08-15 2001-05-31 溅射靶 Pending CN1447864A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US22551800P 2000-08-15 2000-08-15
US60/225518 2000-08-15

Publications (1)

Publication Number Publication Date
CN1447864A true CN1447864A (zh) 2003-10-08

Family

ID=22845198

Family Applications (1)

Application Number Title Priority Date Filing Date
CN01814249A Pending CN1447864A (zh) 2000-08-15 2001-05-31 溅射靶

Country Status (6)

Country Link
EP (1) EP1309736A1 (enExample)
JP (1) JP2004506814A (enExample)
KR (1) KR20030020986A (enExample)
CN (1) CN1447864A (enExample)
AU (1) AU2001275184A1 (enExample)
WO (1) WO2002014576A1 (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102094172A (zh) * 2010-12-03 2011-06-15 无锡润鹏复合新材料有限公司 一种TiWN/MoS2复合薄膜的制备方法
CN104342574A (zh) * 2013-07-31 2015-02-11 三菱综合材料株式会社 铜合金溅射靶及铜合金溅射靶的制造方法
CN108291295A (zh) * 2016-03-25 2018-07-17 捷客斯金属株式会社 Ti-Ta合金溅射靶及其制造方法
CN111910101A (zh) * 2020-07-14 2020-11-10 中南大学 一种高纯度高强高导铜基靶材及其制备方法
CN112063891A (zh) * 2020-09-29 2020-12-11 中国科学院金属研究所 一种高热稳定性等轴纳米晶Ti-Zr-Cr合金及其制备方法
CN114262872A (zh) * 2021-12-31 2022-04-01 北京安泰六九新材料科技有限公司 一种铬铝硼合金复合靶材及其制备方法
CN114480915A (zh) * 2021-12-24 2022-05-13 宝鸡市亨信稀有金属有限公司 钛钨合金靶板的加工工艺
CN115522102A (zh) * 2022-10-12 2022-12-27 苏州大学 一种铝合金导电材料及其制备方法
CN117144308A (zh) * 2023-09-12 2023-12-01 燕山大学 一种ds连轧制备钽靶坯的方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004520492A (ja) * 2001-05-01 2004-07-08 ハネウェル・インターナショナル・インコーポレーテッド Ｔｉ及びＺｒを含む物理的蒸着ターゲット、及び使用方法
US20040016635A1 (en) * 2002-07-19 2004-01-29 Ford Robert B. Monolithic sputtering target assembly
CN102000702B (zh) * 2010-12-21 2012-09-26 重庆大学 一种高纯钽溅射靶材的加工工艺
KR20160049255A (ko) * 2014-10-27 2016-05-09 한국생산기술연구원 스퍼터링 타겟용 합금 및 이로 이루어진 스퍼터링 타겟
WO2017164302A1 (ja) 2016-03-25 2017-09-28 Ｊｘ金属株式会社 Ｔｉ－Ｎｂ合金スパッタリングターゲット及びその製造方法
CN114561622B (zh) * 2022-01-14 2024-04-26 西安理工大学 梯度组织Ti-Nb合金薄膜及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2585730B1 (fr) * 1985-08-01 1987-10-09 Centre Nat Rech Scient Procede de depot de metaux en couche mince sur un substrat non metallique, avec depot intermediaire d'hydrures par pulverisation cathodique reactive
JPH0715990B2 (ja) * 1985-09-11 1995-02-22 三菱電機株式会社 半導体装置
GB2202237A (en) * 1987-03-12 1988-09-21 Vac Tec Syst Cathodic arc plasma deposition of hard coatings
JP2860064B2 (ja) * 1994-10-17 1999-02-24 株式会社神戸製鋼所 Ｔｉ−Ａｌ合金ターゲット材の製造方法
JPH1174348A (ja) * 1996-08-16 1999-03-16 Asahi Chem Ind Co Ltd 半導体装置およびその製造方法
US5939788A (en) * 1998-03-11 1999-08-17 Micron Technology, Inc. Copper diffusion barrier, aluminum wetting layer and improved methods for filling openings in silicon substrates with cooper
JP3104750B2 (ja) * 1998-06-17 2000-10-30 日本電気株式会社 半導体装置の製造方法
US6184550B1 (en) * 1998-08-28 2001-02-06 Advanced Technology Materials, Inc. Ternary nitride-carbide barrier layers

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102094172B (zh) * 2010-12-03 2014-01-01 无锡润鹏复合新材料有限公司 一种TiWN/MoS2复合薄膜的制备方法
CN102094172A (zh) * 2010-12-03 2011-06-15 无锡润鹏复合新材料有限公司 一种TiWN/MoS2复合薄膜的制备方法
CN104342574A (zh) * 2013-07-31 2015-02-11 三菱综合材料株式会社 铜合金溅射靶及铜合金溅射靶的制造方法
CN104342574B (zh) * 2013-07-31 2017-10-31 三菱综合材料株式会社 铜合金溅射靶及铜合金溅射靶的制造方法
US10062552B2 (en) 2013-07-31 2018-08-28 Mitsubishi Materials Corporation Copper alloy sputtering target and manufacturing method of copper alloy sputtering target
US10770274B2 (en) 2013-07-31 2020-09-08 Mitsubishi Materials Corporation Copper alloy sputtering target and manufacturing method of copper alloy sputtering target
CN108291295B (zh) * 2016-03-25 2021-03-16 捷客斯金属株式会社 Ti-Ta合金溅射靶及其制造方法
CN108291295A (zh) * 2016-03-25 2018-07-17 捷客斯金属株式会社 Ti-Ta合金溅射靶及其制造方法
CN111910101A (zh) * 2020-07-14 2020-11-10 中南大学 一种高纯度高强高导铜基靶材及其制备方法
CN112063891A (zh) * 2020-09-29 2020-12-11 中国科学院金属研究所 一种高热稳定性等轴纳米晶Ti-Zr-Cr合金及其制备方法
CN112063891B (zh) * 2020-09-29 2022-02-15 中国科学院金属研究所 一种高热稳定性等轴纳米晶Ti-Zr-Cr合金及其制备方法
CN114480915A (zh) * 2021-12-24 2022-05-13 宝鸡市亨信稀有金属有限公司 钛钨合金靶板的加工工艺
CN116287861A (zh) * 2021-12-24 2023-06-23 宝鸡市亨信稀有金属有限公司 一种钛钨合金靶板及其制备方法和应用
CN114262872A (zh) * 2021-12-31 2022-04-01 北京安泰六九新材料科技有限公司 一种铬铝硼合金复合靶材及其制备方法
CN114262872B (zh) * 2021-12-31 2024-03-08 北京安泰六九新材料科技有限公司 一种铬铝硼合金复合靶材及其制备方法
CN115522102A (zh) * 2022-10-12 2022-12-27 苏州大学 一种铝合金导电材料及其制备方法
CN117144308A (zh) * 2023-09-12 2023-12-01 燕山大学 一种ds连轧制备钽靶坯的方法

Also Published As

Publication number Publication date
JP2004506814A (ja) 2004-03-04
EP1309736A1 (en) 2003-05-14
AU2001275184A1 (en) 2002-02-25
WO2002014576A1 (en) 2002-02-21
KR20030020986A (ko) 2003-03-10

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