KR20030020986A - 스퍼터링 타겟 - Google Patents

스퍼터링 타겟 Download PDF

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Publication number
KR20030020986A
KR20030020986A KR10-2003-7002169A KR20037002169A KR20030020986A KR 20030020986 A KR20030020986 A KR 20030020986A KR 20037002169 A KR20037002169 A KR 20037002169A KR 20030020986 A KR20030020986 A KR 20030020986A
Authority
KR
South Korea
Prior art keywords
alloying elements
thin film
less
sputtering target
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR10-2003-7002169A
Other languages
English (en)
Korean (ko)
Inventor
리지앙씽
터널스테펜
야오리준
Original Assignee
허니웰 인터내셔널 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 허니웰 인터내셔널 인코포레이티드 filed Critical 허니웰 인터내셔널 인코포레이티드
Publication of KR20030020986A publication Critical patent/KR20030020986A/ko
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/035—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • H10W20/0526—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein by thermal treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR10-2003-7002169A 2000-08-15 2001-05-31 스퍼터링 타겟 Ceased KR20030020986A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22551800P 2000-08-15 2000-08-15
US60/225,518 2000-08-15
PCT/US2001/017996 WO2002014576A1 (en) 2000-08-15 2001-05-31 Sputtering target

Publications (1)

Publication Number Publication Date
KR20030020986A true KR20030020986A (ko) 2003-03-10

Family

ID=22845198

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-7002169A Ceased KR20030020986A (ko) 2000-08-15 2001-05-31 스퍼터링 타겟

Country Status (6)

Country Link
EP (1) EP1309736A1 (enExample)
JP (1) JP2004506814A (enExample)
KR (1) KR20030020986A (enExample)
CN (1) CN1447864A (enExample)
AU (1) AU2001275184A1 (enExample)
WO (1) WO2002014576A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016068562A1 (ko) * 2014-10-27 2016-05-06 한국생산기술연구원 스퍼터링 타겟용 합금 및 이로 이루어진 스퍼터링 타겟

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004520492A (ja) * 2001-05-01 2004-07-08 ハネウェル・インターナショナル・インコーポレーテッド Ｔｉ及びＺｒを含む物理的蒸着ターゲット、及び使用方法
US20040016635A1 (en) * 2002-07-19 2004-01-29 Ford Robert B. Monolithic sputtering target assembly
CN102094172B (zh) * 2010-12-03 2014-01-01 无锡润鹏复合新材料有限公司 一种TiWN/MoS2复合薄膜的制备方法
CN102000702B (zh) * 2010-12-21 2012-09-26 重庆大学 一种高纯钽溅射靶材的加工工艺
JP6274026B2 (ja) 2013-07-31 2018-02-07 三菱マテリアル株式会社 銅合金スパッタリングターゲット及び銅合金スパッタリングターゲットの製造方法
WO2017164302A1 (ja) 2016-03-25 2017-09-28 Ｊｘ金属株式会社 Ｔｉ－Ｎｂ合金スパッタリングターゲット及びその製造方法
EP3339469A4 (en) * 2016-03-25 2019-03-27 JX Nippon Mining & Metals Corporation TI-TA ALLOY SPUTTER TARGET AND MANUFACTURING METHOD THEREFOR
CN111910101B (zh) * 2020-07-14 2021-08-03 中南大学 一种高纯度高强高导铜基靶材及其制备方法
CN112063891B (zh) * 2020-09-29 2022-02-15 中国科学院金属研究所 一种高热稳定性等轴纳米晶Ti-Zr-Cr合金及其制备方法
CN114480915A (zh) * 2021-12-24 2022-05-13 宝鸡市亨信稀有金属有限公司 钛钨合金靶板的加工工艺
CN114262872B (zh) * 2021-12-31 2024-03-08 北京安泰六九新材料科技有限公司 一种铬铝硼合金复合靶材及其制备方法
CN114561622B (zh) * 2022-01-14 2024-04-26 西安理工大学 梯度组织Ti-Nb合金薄膜及其制备方法
CN115522102B (zh) * 2022-10-12 2023-07-18 苏州大学 一种铝合金导电材料及其制备方法
CN117144308B (zh) * 2023-09-12 2025-02-07 燕山大学 一种ds连轧制备钽靶坯的方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2585730B1 (fr) * 1985-08-01 1987-10-09 Centre Nat Rech Scient Procede de depot de metaux en couche mince sur un substrat non metallique, avec depot intermediaire d'hydrures par pulverisation cathodique reactive
JPH0715990B2 (ja) * 1985-09-11 1995-02-22 三菱電機株式会社 半導体装置
GB2202237A (en) * 1987-03-12 1988-09-21 Vac Tec Syst Cathodic arc plasma deposition of hard coatings
JP2860064B2 (ja) * 1994-10-17 1999-02-24 株式会社神戸製鋼所 Ｔｉ−Ａｌ合金ターゲット材の製造方法
JPH1174348A (ja) * 1996-08-16 1999-03-16 Asahi Chem Ind Co Ltd 半導体装置およびその製造方法
US5939788A (en) * 1998-03-11 1999-08-17 Micron Technology, Inc. Copper diffusion barrier, aluminum wetting layer and improved methods for filling openings in silicon substrates with cooper
JP3104750B2 (ja) * 1998-06-17 2000-10-30 日本電気株式会社 半導体装置の製造方法
US6184550B1 (en) * 1998-08-28 2001-02-06 Advanced Technology Materials, Inc. Ternary nitride-carbide barrier layers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016068562A1 (ko) * 2014-10-27 2016-05-06 한국생산기술연구원 스퍼터링 타겟용 합금 및 이로 이루어진 스퍼터링 타겟

Also Published As

Publication number Publication date
JP2004506814A (ja) 2004-03-04
EP1309736A1 (en) 2003-05-14
AU2001275184A1 (en) 2002-02-25
CN1447864A (zh) 2003-10-08
WO2002014576A1 (en) 2002-02-21

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Patent event date: 20030214

Patent event code: PA01051R01D

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