TWI246874B - Hillock-free aluminum metal layer and method of forming the same - Google Patents
Hillock-free aluminum metal layer and method of forming the same Download PDFInfo
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1246874 玖、發明說明: 【發明所屬之技術領域】 本發明是有關於一種鋁金屬層,且特別是有關於一種不具 小凸起之紹金屬層(Hillock-Free Aluminum Layer )及其製造方 法。 【先前技術】 在半導體製程中,一般係選用鉬(Mo丨ybdenum,M〇)、钽 (Tantalum’Ta)、鉻(Chromium’Cr)、鑄(Tungsten,W)等金屬或1246874 发明Invention Description: TECHNICAL FIELD The present invention relates to an aluminum metal layer, and more particularly to a Hillock-Free Aluminum Layer and a method of manufacturing the same. [Prior Art] In the semiconductor process, metals such as molybdenum (M〇), tantalum (Tatalum'Ta), chromium (Chromium'Cr), and cast (Tungsten, W) are generally used.
合金做為金屬層之材料,然而,價格昂貴的鉬或鉻等金屬會使 整個製程成本居高不下。地球上含量最豐富的金屬礦_鋁,不但 容易取得,且價格便宜,一般多應用於金屬製程中,然而,若 應用鋁材料於金屬製程中,在後續的高溫製程之後,會有表面 小凸起或銘尖凸(Hillock)的問題。 選用鋁的優點是:鋁具有低電阻係數,且與基板 (Substrate)間有良好的附著性(Adhesion),在餘刻製程中亦表 現出較佳的I虫刻特性(Etching Characteristics)。然而,使用溶 點(Melting Point)較一般金屬低的鋁作為金屬,仍有其缺點。 請參照第1A圖,其繪示金屬沉積於玻璃基板之示意圖。先在 較低的溫度下(約150°C)將金屬沉積在玻璃基板1〇2上,因此 玻璃基板102上有晶粒(Grain)1 04,晶粒104和晶粒104之間 則有晶界(Grain Boundary) 106形成。當然,實際上的晶粒並 不會如第1A圖一樣方正,在此係為了方便說明,而以整齊的 方形晶粒表示。接著,將金屬層作退火(Anneal)處理,隨著溫 度的升高,金屬層與基材都會因為受熱而膨脹,但兩者之間的 熱膨脹係數(Thermal Expansion Coefficients)並不相同,如此 會使得金屬層與基材之間產生相當大的不協調(Mismatch),由 1246874 於金屬層與基材熱膨脹係數間差異的存在,會在兩者的介面處 產生一個壓縮應力作用於金屬層,而金屬層為將此應力釋放而 產生表面小凸起或尖凸(Hillock),來消除金屬層與基材介面間 的不協調。 使用铭作為金屬層時,會有小凸起的問題產生。請參照第 1 B圖’其繪示退火後的鋁於玻璃基板之示意圖。退火過程的高 溫’使銘晶粒104和玻璃基板1〇2均產生熱膨脹(Therma丨 Expansion) ’由於鋁係附著在玻璃基板1〇2上,但鋁的熱膨脹 係數大於玻璃的熱膨脹係數,使鋁晶粒1 〇4受到極大的壓應力 Φ (ComPressive Stress),為使此壓應力舒緩,鋁原子會沿著晶 界106擴散,進而累積成長,而在其上方形成小凸起或鋁尖凸 (Hillock)11〇。這種在金屬層上形成的小凸起或鋁尖凸11(),會 造成元件表面粗糙而造成漏電、短路或影響場效應(Fje丨d Effec 等情形。 :!又有兩種#見的傳統做法,以解決小凸起或銘尖凸的問 題,方法如下:第一種傳統的解決方法,是在鋁中加入少許熔 點更高的其他元素,如鈥(Nd)、鈦(Ti)、鍅(Zr)、鈕(Ta)、矽、 或銅(Cu)。由於非鋁元素無法和鋁互溶,因此當晶粒成長時, Φ 非鋁兀素會轉移至晶界,而在晶界中聚集成一小顆粒,這些小 顆粒會堵住晶界之通道,使銘沿著晶界成長時,無法通過小顆 粒而突出於晶粒上方,進而抑制小凸起之形成。其中,又以 Kobelco公司提出的鋁鈥(A1-Nd)合金最為知名而被廣泛應用。 然而,敍(Nd)為稀有金屬,成本昂貴,且因摻雜则,需使用較 f艾的濺鍍速率(Sputtering Rate)以防止喷濺(Splash)之產生·,更 重要的是,鈦具有高電阻值,使鋁鈥合金的總電阻值高於鋁甚 多,鉍合上述,利用此法將使得成本增加且使得電阻值提高。 第二種方法係在鋁上方覆蓋一層高熔點的金屬層,以阻止 1246874 J凸起之成長。此做法係在玻璃基板之鋁晶粒上方,先鍍上一 層熔點,向之金屬層,再進行退火。由於此金屬層像蓋子一 樣可盖住晶界上方之出π,因在匕可阻撞紹在晶界上方形成小 之 中系用之金屬層為鉻(Chromium,Cr)、|目 (lybdenum ’ M〇)、!巨(Tantalum,Ta)、鷂(Tungsten,W)等。 士此,雖然維持鋁之低電阻係數、與基板間有良好的附著性、及 在蝕刻製程中亦表現出較佳的蝕刻特性優點,但須提供另一非 鋁金屬層製程,則增加成本。 二本發明提供另一方法,只使用一鋁金屬層,將使其製作成 本杈上述二種方法低廉,並可抑制小凸起,提供不具小凸起之 =金屬層(HHI〇Ck_Free Aluminum Layer )及其製造方法,同 ^利用鋁本身具有低電阻係數、與基板間有良好的附著性、 及在蝕刻製程中亦表現出較佳的蝕刻特性之優點。 ,根據上述,如何在一般半導體製程或在液晶顯示器之鋁金 屬製知中’應用1呂以降低成本,但又可防制小凸起或銘尖凸 (Hi Mock)的產生,係為業界一重要研究目標。 【發明内容】 有鑑於此,本發明的目的就是在提供一種不具小凸起之鋁 金屬層及其製造方法,湘熱膨關數介於基板和狀間的緩 不平坦之小凸起或紹尖凸(Hi丨丨〇ck)的產生。不但使元件具良好 的電傳導性質,更使製造成本大幅降低。 根據本發明的目的,提出一種不具小凸起之紹金屬層,係 於-基板上形成至少兩層的紹層,此紹金屬層包括··一緩衝鋁 1246874 • 成於緩衝無層之上方;其中,緩衝鋁層的組成可為氮化鋁 (Aluminum Nitride,AINx)、氧化鋁(Aluminum Oxide,ΑΙΟχ) 或含氮氧化鋁(Aluminum Oxide-Nitride,AlOxNy),或是以上 二者相互搭配之多層式複合金屬層等,而且緩衝鋁層的熱膨脹 係數(Thermal Expansion Coefficient)係小於鋁層的熱膨脹係 數且大於基板的熱膨脹係數。其中,紹層之厚度於1 〇〇〇入 〜4500 A之間,且緩衝鋁層與鋁層之厚度比範圍約於1:6〜1:1 之間。 肇 另外,為得到低電阻率(Resistivity)且可兼顧後續製程如 钱刻後的元件具有良好的剖面(pr〇fj|e),緩衝I呂層之厚度係較 佳地小於|呂層之厚度;其中,鋁層之厚度於1〇〇〇 A〜45〇〇 A 之間’且緩衝鋁層與鋁層之厚度比範圍約於1:6〜彳:2之間。 為讓本發明之上述目的、特徵、和優點能更明顯易懂,下 文特舉較佳實施例,並配合所附圖式,作詳細說明如下: 【實施方式】 本發明之技術特點在於,在基板上先形成一緩衝鋁層,然 9 後在緩衝鋁層上方再形成一鋁層。緩衝鋁層的熱膨脹係數 (Thermal Expansion Coefficient)係小於銘層的熱膨脹係數且 大於基板的熱膨脹係數,以抑制小凸起(Hillock)之產生。 明參弟2圖’其繪示依照本發明一較佳實施例之可抑制 小凸起之鋁層的示意圖。以玻璃基板202為例,其上方先形成 一緩衝鋁層204,例如是氮化鋁(Aluminum Nitride,AINx)、氧 化铭(Alum_mum Oxide,ΑΙΟχ)或含氮氧化鋁(A|um丨num Oxide-Nitride,AlOxNy),或是以上三者相互搭配之多層式複 合金屬層等’然後再形成一 |g層206於緩衝紹層204的上方。 1246874 其中,夾在玻璃基板202和鋁層206中間的緩衝鋁層204,其 熱膨脹係數亦在兩者之間,因此,在後續高溫製程中可抑制小 凸起之形成。表一為退火前,鋁、氮化鋁、氧化鋁、含氮氧化 鋁及三家廠商所提供的不同玻璃基板之熱膨脹係數和電阻率 (Resistivity)。 表一Alloys are used as the metal layer. However, expensive metals such as molybdenum or chromium can keep the cost of the entire process high. The most abundant metal ore on the earth, aluminum, is not only easy to obtain, but also inexpensive. It is generally used in metal processes. However, if aluminum is used in the metal process, there will be a small convex surface after the subsequent high temperature process. The problem of lifting or styling (Hillock). The advantage of using aluminum is that aluminum has a low electrical resistivity and good adhesion to the substrate, and it also exhibits better Etching Characteristics in the process. However, the use of aluminum having a lower melting point (Melting Point) than ordinary metals as a metal has its drawbacks. Please refer to FIG. 1A, which shows a schematic diagram of metal deposition on a glass substrate. The metal is first deposited on the glass substrate 1〇2 at a lower temperature (about 150 ° C), so that the glass substrate 102 has grains (104), and there is crystal between the grains 104 and the grains 104. The Grain Boundary 106 is formed. Of course, the actual crystal grains are not as square as in Fig. 1A, and are shown here as neat square grains for convenience of explanation. Then, the metal layer is annealed. As the temperature increases, both the metal layer and the substrate expand due to heat, but the thermal expansion coefficients are not the same between the two, which makes There is considerable mismatch between the metal layer and the substrate. The difference between the thermal expansion coefficient of the metal layer and the substrate by 1246874 will cause a compressive stress on the metal layer at the interface between the two, while the metal The layer releases the stress to produce a small surface protrusion or a bulge to eliminate the inconsistency between the metal layer and the substrate interface. When using the metal layer as a metal layer, there is a problem of small bumps. Please refer to FIG. 1B for a schematic view of the annealed aluminum on the glass substrate. The high temperature of the annealing process causes the thermal expansion of the crystal grain 104 and the glass substrate 1〇2 (Therma丨Expansion) 'Because the aluminum system adheres to the glass substrate 1〇2, the thermal expansion coefficient of aluminum is greater than the thermal expansion coefficient of the glass, so that aluminum The grain 1 〇4 is subjected to a very large compressive stress Φ (ComPressive Stress). In order to relieve the compressive stress, the aluminum atoms diffuse along the grain boundary 106, thereby accumulating and growing, and forming a small protrusion or an aluminum tip convex thereon ( Hillock) 11〇. This small bump or aluminum tip 11 () formed on the metal layer will cause the surface of the component to be rough and cause leakage, short circuit or influence of field effect (Fje丨d Effec, etc. :! There are two kinds of #见Traditionally, to solve the problem of small bumps or pointed bumps, the method is as follows: The first traditional solution is to add a little more melting point to other elements such as niobium (Nd) and titanium (Ti).鍅 (Zr), button (Ta), tantalum, or copper (Cu). Since non-aluminum elements are not miscible with aluminum, Φ non-aluminine will transfer to grain boundaries while grain growth, but in grain boundaries Gathering into a small particle, these small particles will block the channel of the grain boundary, so that when growing along the grain boundary, it cannot protrude above the grain by small particles, thereby suppressing the formation of small protrusions. Among them, Kobelco The proposed aluminum-bismuth (A1-Nd) alloy is the most well-known and widely used. However, Nd is a rare metal, which is expensive, and because of doping, it is necessary to use a sputtering rate (Sputtering Rate). Prevent the generation of Splash, and more importantly, titanium has high power The value of aluminum bismuth alloy is much higher than that of aluminum, which is the same as above. The method will increase the cost and increase the resistance value. The second method is to coat the aluminum with a layer of high melting point metal. Prevents the growth of the 1246874 J bump. This is done above the aluminum grain of the glass substrate, first plated with a melting point, and then annealed to the metal layer. Since the metal layer covers the grain boundary like a lid π, because the ruthenium can be formed on the top of the grain boundary, the metal layer used for the system is chromium (Chromium, Cr), 目 (lybdenum 'M〇), ! giant (Tantalum, Ta), 鹞 (Tungsten , W), etc. Although maintaining the low resistivity of aluminum, good adhesion to the substrate, and exhibiting better etching characteristics during the etching process, another non-aluminum metal layer process must be provided. The invention provides an additional method. Only one aluminum metal layer is used, which makes it costly to manufacture. The above two methods are inexpensive, and can suppress small bumps, and provide a metal layer without a small bump (HHI). 〇Ck_Free Aluminum Layer ) and The manufacturing method has the advantages of low resistivity of aluminum itself, good adhesion to the substrate, and good etching characteristics in the etching process. According to the above, how is the general semiconductor process or In the aluminum metal system of liquid crystal display, it is an important research goal in the industry to reduce the cost, but it can prevent the occurrence of small bumps or Hi Mocks. The object of the present invention is to provide an aluminum metal layer without small protrusions and a manufacturing method thereof, and the small number of swells and swells between the substrate and the shape are small uneven protrusions or Hi 丨丨〇 Ck). Not only does the component have good electrical conductivity properties, but the manufacturing cost is greatly reduced. According to the purpose of the present invention, a metal layer having no small bumps is provided, and at least two layers of the layer are formed on the substrate, and the metal layer includes a buffer aluminum 1246874. The buffer aluminum layer may be composed of aluminum nitride (Aluminum Nitride, AINx), aluminum oxide (Aluminum Oxide) or aluminum oxide (Aluminum Oxide-Nitride, AlOxNy), or a plurality of layers of the above. The composite metal layer or the like, and the thermal expansion coefficient of the buffer aluminum layer is smaller than the thermal expansion coefficient of the aluminum layer and larger than the thermal expansion coefficient of the substrate. Wherein, the thickness of the layer is between 1 and 4500 A, and the thickness ratio of the buffered aluminum layer to the aluminum layer is between about 1:6 and 1:1. In addition, in order to obtain a low resistivity (Resistivity) and a good cross-section (pr〇fj|e) of the component after the subsequent process, the thickness of the buffer I ly layer is preferably smaller than the thickness of the lyon layer. Wherein, the thickness of the aluminum layer is between 1 〇〇〇A and 45 〇〇A' and the thickness ratio of the buffered aluminum layer to the aluminum layer ranges from about 1:6 to about 2:2. The above described objects, features, and advantages of the present invention will become more apparent from the aspects of the embodiments of the invention. A buffer aluminum layer is first formed on the substrate, and then an aluminum layer is formed over the buffer aluminum layer. The thermal expansion coefficient of the buffer aluminum layer is smaller than the thermal expansion coefficient of the underlayer and larger than the thermal expansion coefficient of the substrate to suppress the generation of small bumps. Illustrated in Figure 2, a schematic view of an aluminum layer capable of suppressing small bumps in accordance with a preferred embodiment of the present invention is shown. Taking the glass substrate 202 as an example, a buffer aluminum layer 204 is formed on the upper surface, for example, aluminum nitride (Aluminum Nitride, AINx), oxidized aluminum (Alum_mum Oxide) or nitrogen-containing aluminum oxide (A|um丨num Oxide- Nitride, AlOxNy), or a multi-layer composite metal layer or the like in which the above three are matched with each other, and then a layer of |g is formed over the buffer layer 204. 1246874 wherein the buffer aluminum layer 204 sandwiched between the glass substrate 202 and the aluminum layer 206 has a coefficient of thermal expansion therebetween, and therefore, the formation of small bumps can be suppressed in a subsequent high-temperature process. Table 1 shows the thermal expansion coefficient and resistivity (Resistivity) of different glass substrates provided by aluminum, aluminum nitride, aluminum oxide, nitrogen-containing aluminum oxide and three manufacturers before annealing. Table I
Corning (玻璃基板) NHT (玻璃基板) Asahi (玻璃基板) 鋁 (ΑΙ) 氮化鋁 (ΑΙΝ) 氧化鋁 (Al2〇3) 含氮氧化鋁 (AlOxNy) 型號 1737 E2000 NA35 NA25 NA30 AN 100 熱膨服係數 (x10_7/°C) 37.8 32 37 26 32 38 231 45 81 45 〜81 電阻率(.cm) NA NA NA NA NA ΝΑ 2.65x106 5.6x1013 2χ1013 2x1013 〜5.6x1013Corning (glass substrate) NHT (glass substrate) Asahi (glass substrate) Aluminum (ΑΙ) Aluminum nitride (ΑΙΝ) Alumina (Al2〇3) Nitrogen-containing alumina (AlOxNy) Model 1737 E2000 NA35 NA25 NA30 AN 100 Thermal expansion Coefficient (x10_7/°C) 37.8 32 37 26 32 38 231 45 81 45 ~81 Resistivity (.cm) NA NA NA NA NA ΝΑ 2.65x106 5.6x1013 2χ1013 2x1013 ~5.6x1013
於進行退火時,由於玻璃基板202與鋁層206的熱膨脹係 數差異過大,導致小凸起在鋁層206表面形成,若於玻璃基板 202與鋁層206間加一緩衝鋁層204,由於緩衝鋁層204的熱 膨脹係數介於玻璃基板202與鋁層206之間,以此配置可減緩 玻璃基板202與鋁層206間的應力,使得最靠近玻璃基板的緩 衝鋁層2〇4具有類似緩衝(已1^0|1|19)的作用,因此,在退火後, 可抑制小凸起在鋁層206表面形成。同時,為得到低電阻率 (Resistivity)且可兼顧後續製程如蝕刻後的元件具有良好的剖 面(Profile),其緩衝鋁層204之厚度係較佳地小於銘層206之 厚度。 以下則針對本發明之鋁金屬層結構,做一系列實驗,於一鋁靶 1246874 材之真空艙(Vacuum Cham be r)通入氬氣(Ar)濺鍍(Sputtering)When the annealing is performed, the difference in thermal expansion coefficient between the glass substrate 202 and the aluminum layer 206 is too large, so that small bumps are formed on the surface of the aluminum layer 206. If a buffer aluminum layer 204 is applied between the glass substrate 202 and the aluminum layer 206, the buffer aluminum is used. The coefficient of thermal expansion of the layer 204 is between the glass substrate 202 and the aluminum layer 206, and the configuration can slow the stress between the glass substrate 202 and the aluminum layer 206, so that the buffer aluminum layer 2〇4 closest to the glass substrate has a similar buffer (already The action of 1^0|1|19), therefore, after annealing, the formation of small bumps on the surface of the aluminum layer 206 can be suppressed. At the same time, in order to obtain a low resistivity and a subsequent process such as an etched component having a good profile, the thickness of the buffered aluminum layer 204 is preferably less than the thickness of the layer 206. In the following, a series of experiments were carried out on the aluminum metal layer structure of the present invention, and argon (Ar) sputtering was applied to a vacuum chamber of an aluminum target 1246874 (Vacuum Cham be r).
可得到一鋁層,至於緩衝鋁層則以氬氣及氮氣(N2)通入濺鍍可 得到一氮化鋁層(AINx),以氬氣及氧氣(02)通入濺鍍可得到一 氧化銘層(Al Ox),以氬氣、氮氣及氧氣通入錢鐘可得到一含氮 氧化鋁層(AlOxNy),並經過退火溫度(Annealing Temperature)340°C,退火時間(Annealing Time)30 分鐘後, 以掃描式電子顯微鏡(Scanning Electron Microscope)觀察銘 層上方是否有小凸起形成以及其剖面結構(Profile)。本發明部 分實驗結果如表二所示。 表二 實驗 緩衝在呂 層 膜厚(Λ) 鋁層 膜厚(Λ) 緩衝鋁層與 鋁層之膜厚 比 退火後是否 產生 小凸起 剖面結構 (Profile) 一 0 2000 0 是 - —一- 200 2000 1:10 是 不佳 三 300 2000 1 :6_7 是 不佳 四 400 2000 1:5 無 良好 五 500 2000 1:4 無 良好 六 600 2000 1 :3.3 無 良好 七 1000 2000 1:2 無 良好 八 1500 2000 1:1.3 無 不佳 九 2000 2000 1:1 無 不佳 十 250 1800 1:7.2 是 不佳 Η— 300 1800 1:6 無 良好 十二 900 1800 1:2 無 良好 十三 1800 1800 1:1 無 不佳 10 1246874 十四 300 2500 1 :8.3 是 不佳 十五 400 2500 1 :6_3 無 良好 十六 600 2500 1:4.2 無 良好 十七 700 2500 1:3.6 無 良好 十八 1250 2500 1:2 無 良好 十九 2500 2500 1:1 無 不佳 二十 600 4500 1 :7_5 是 不佳 二十一 750 4500 1:6 無 良好 二十二 1500 4500 1:3 無 良好 二十三 2250 4500 1:2 無 良好 二十四 4500 4500 1:1 無 不佳An aluminum layer can be obtained. As for the buffer aluminum layer, an aluminum nitride layer (AINx) can be obtained by sputtering with argon gas and nitrogen gas (N2), and argon gas and oxygen gas (02) can be used for sputtering to obtain oxidation. In the layer (Al Ox), a nitrogen-containing aluminum oxide layer (AlOxNy) is obtained by passing argon, nitrogen and oxygen into the money clock, and the annealing temperature is 340 ° C and the annealing time (Annealing Time) is 30 minutes. After that, a scanning electron microscope (Scanning Electron Microscope) was used to observe whether there was a small protrusion above the inscription layer and its profile. Some of the experimental results of the present invention are shown in Table 2. Table 2 Experimental buffer in Lu film thickness (Λ) Aluminum film thickness (Λ) Buffer aluminum layer and aluminum layer film thickness ratio after annealing to produce a small convex section structure (Profile) A 0 2000 0 Yes - One - 200 2000 1:10 is not good three 300 2000 1 : 6_7 is not good four 400 2000 1:5 no good five 500 2000 1:4 no good six 600 2000 1 : 3.3 no good seven 1000 2000 1:2 no good eight 1500 2000 1:1.3 Nothing good nine 2000 2000 1:1 No bad ten 250 1800 1:7.2 is not good Η — 300 1800 1:6 No good twelve 900 1800 1:2 No good thirteen 1800 1800 1: 1 Nothing good 10 1246874 Fourteen 300 2500 1 : 8.3 is not good fifteen 400 2500 1 : 6_3 No good sixteen 600 2500 1:4.2 No good seventeen 700 2500 1:3.6 No good eighteen 1250 2500 1:2 No good nineteen 2500 2500 1:1 no bad twenty 600 4500 1 :7_5 is not good twenty one 750 4500 1:6 no good twenty two 1500 4500 1:3 no good twenty three 2250 4500 1:2 No good twenty four 4500 4500 1:1 no bad
實驗一(對照組) 以成膜壓力0.3 Pa,濺鍍(sputtering)單層鋁於玻璃基板 上,其膜厚約為2000 A。經過退火溫度340°C,退火時間30 分鐘後,以掃描式電子顯微鏡(Scanning electron microscope,SEM)觀察鋁層上方是否有小凸起形成。 觀察結果顯示··在沒有其他中間物做緩衝的情形下,鋁層 在退火後會產生小凸起。 實驗二 在玻璃基板上,先以成膜壓力0.5 P a,沈積一緩衝铭層, 本實驗分別針對氮化鋁層(AINx)、氧化鋁層(ΑΙΟχ)及含氮氧化 鋁層(AlOxNy)其膜厚約為20〇Λ。接著,以成膜壓力0.3Pa, 在緩衝鋁層上方沈積一鋁層,其膜厚約為2000 Λ。即此時緩衝 鋁層與鋁層之膜厚比為1:10,分別得到200 Α氮化鋁層(AINx) 11 1246874 上沈積一 2000 A之鋁層、200入氧化鋁層(ΑΙΟχ)上沈積一 2000 入之鋁層及200 Α含氮氧化鋁層(AlOxNy)上沈積一 2000入之 鋁層,經過退火溫度340°C,退火時間30分鐘後,以掃描式 電子顯微鏡(Scanning electron microscope,SEM)觀察鋁層上 方是否有小凸起形成及其剖面結構(Profile)。 觀察結果顯示:上述之200 Λ氮化鋁層(AINx)上沈積一 2000入 之鋁層、200 A氧化鋁層(ΑΙΟχ)上沈積一 2000 A之鋁層及200 入含氮氧化鋁層(AlOxNy)上沈積一 2000入之鋁層,在200入之Experiment 1 (control group) A single layer of aluminum was sputtered onto a glass substrate at a film formation pressure of 0.3 Pa, and the film thickness was about 2000 Å. After annealing at 340 ° C for 30 minutes, a scanning electron microscope (SEM) was used to observe the presence of small protrusions on the aluminum layer. The observation shows that the aluminum layer produces small bumps after annealing without any other intermediates being buffered. In the second experiment, a buffered layer was deposited on the glass substrate at a film formation pressure of 0.5 P a. The experiment was performed on the aluminum nitride layer (AINx), the aluminum oxide layer (ΑΙΟχ) and the nitrogen-containing aluminum oxide layer (AlOxNy). The film thickness is about 20 〇Λ. Next, an aluminum layer was deposited over the buffer aluminum layer at a film formation pressure of 0.3 Pa, and the film thickness was about 2000 Å. That is, at this time, the film thickness ratio of the buffer aluminum layer to the aluminum layer is 1:10, and a 200 Å aluminum nitride layer (AINx) 11 1246874 is deposited on the aluminum layer of 2000 A, and the aluminum oxide layer (ΑΙΟχ) is deposited on the aluminum oxide layer (ΑΙΟχ). A 2000-into-aluminum layer and a 200-inch aluminum-containing aluminum oxide layer (AlOxNy) were deposited with a 2000-in-aluminum layer, which was annealed at 340 ° C for 30 minutes and then scanned by electron microscopy (SEM). ) Observe whether there is a small protrusion above the aluminum layer and its profile. The observation results show that a 2000-aluminum layer is deposited on the above-mentioned 200 Å aluminum nitride layer (AINx), a 2000 A aluminum layer is deposited on the 200 A aluminum oxide layer (ΑΙΟχ), and a nitrogen-containing aluminum oxide layer is deposited on the 200 Å aluminum oxide layer (AlOxNy). ) depositing a layer of 2000 into the aluminum layer, at 200
缓衝鋁層做緩衝的情形下,緩衝鋁層與鋁層之膜厚比為1:1 0, 觀察鋁層在退火後會產生小凸起及其剖面結構,發現此膜厚比 尚無法完全緩和基板與鋁層之應力且其剖面結構(Profile)不佳 造成緩衝铭層過姓刻。 實驗三 如實驗二之方法,先在玻璃基板上沈積一緩衝鋁層,其膜 厚約為300 A。接著,在緩衝铭層上方沈積一铭層,其膜厚約 為2000 Λ,此時緩衝鋁層與鋁層之膜厚比為1:6·7。 在退火溫度340°C,回火時間30分鐘後,以掃描式電子 顯微鏡(SEM)觀察鋁層上方,觀察鋁層在退火後會產生小凸起 及其剖面結構,此膜厚比尚無法完全緩和基板與鋁層之應力且 其剖面結構(Profile)不佳造成緩衝鋁層過蝕 刻。 實驗四 如實驗二、三的方法,在實驗四中,係在玻璃基板上先沈 積膜厚約為400 A之一緩衝銘層。接著,在緩衝銘層上方沈積 12 1246874 膜厚約為2000 A之一鋁層,此時之緩衝鋁層與鋁層之膜厚比 為1:5。觀察結果顯示:上述之400 A氮化鋁層(AINx)上沈積 一 2000 A之鋁層、400 A氧化鋁層(ΑΙΟχ)上沈積一 2000 A之 在呂層及400入含氮氧化銘層(AlOxNy)上沈積一 2000 A之|呂 層’在40〇A之緩衝銘層做緩衝的情形下,緩衝|呂層與链層之 膜厚比為1:5,觀察铭層在退火後小凸起可完全被抑制而無法 產生,由此可知,此1:5之膜厚比可有效抑制基板與鋁層之應 力且可得到良好之剖面結構。 在玻璃基板上先沈積膜厚約5〇〇 A之緩衝銘 層’再沈積膜厚約為2000 A之铭層,緩衝紹層與铭層之膜厚 比為1:4,鋁層在退火後小凸起可完全被抑制而無法產生。 复屋^一在玻璃基板上先沈積膜厚約6〇〇 Λ之緩衝紹 層,再沈積膜厚約為2000 Λ之鋁層,緩衝鋁層與鋁層之膜厚 比為1:3_3,鋁層在退火後小凸起可完全被抑制而無法產生且 可得到良好之剖面結構。 复驗在玻璃基板上先沈積膜厚約10〇〇厶之緩衝紹 層,再沈積膜厚約為2000 Λ之鋁層,緩衝鋁層與鋁層之膜厚 比為1:2,鋁層在退火後小凸起可完全被抑制而無法產生且可 得到良好之剖面結構。 复邀在玻璃基板上先沈積膜厚約15〇〇厶之緩衝鋁 層、,再沈積膜厚約為2000 Λ之鋁層,緩衝鋁層與鋁層之膜厚 比為1:1.3 ’銘層在退火後小凸起可完全被抑制而無法產生但 13 1246874 ^ d面、、、α構因造成鋁層之過蝕刻使得緩衝鋁層蝕刻不足留下 過長之緩衝銘層。 —在玻璃基板上先沈積膜厚約2〇〇〇 Λ之緩衝鋁 :再/尤和膜厚約為2000 Α之鋁層緩衝鋁層與鋁層之膜厚比 為1·1,紹層在退火後小凸起可完全被抑制而無法產生但其剖 面^構因造成層之過㈣使得緩衝㈣㈣不足留下過長 之緩衝!呂層。同樣的’在實驗四〜九中,亦以溫度、時 間30分鐘進行退火,再以掃描式電子顯微鏡(sem)觀察鋁層上 方,發現小凸起可完全被抑制而無法產生。 < 鱼土同上述實驗二在玻璃基板上先沈積膜厚約25〇入 之緩衝_,再沈賴厚約4 1_ Α之铭層,其巾,緩衝銘 層與鋁層之膜厚比為1:7_2,亦以溫度340°C、時間30分鐘進 仃退火,再以掃描式電子顯微鏡(SEM)觀察鋁層上方,在退火 後S產生小凸起,此膜厚比尚無法完全緩和基板與鋁層之應力 且其剖面結構(Profile)不佳造成緩衝鋁層過蝕刻。 ΐ·致土二__一在玻璃基板上先沈積膜厚約3〇〇厶之緩衝鋁 層j再沈積膜厚約為1800 Α之紹層,其中,緩衝鋁層與鋁層 之膜厚比為1:6,亦以溫度34〇〇c、時間3〇分鐘進行退火,再 以柃描式電子顯微鏡(SEM)觀察鋁層上方,發現小凸起可完全 被抑制而無法產生,且可得到良好之剖面結構。。 在玻璃基板上先沈積膜厚約90〇 a之緩衝紹 層,再沈積膜厚約為1800 Λ之鋁層,其中,緩衝鋁層與鋁層 14 1246874 之膜厚比為1:2,亦以溫度34〇。〇、時間3〇分鐘進行退火,再 以掃描式電子顯微鏡(SEM)觀察銘層上方,發現小凸起可完全 被抑制而無法產生,且可得到良好之剖面結構。 叉麼在玻璃基板上先沈積膜厚約18〇〇八之緩衝鋁 層,再沈積膜厚約為⑽Ο A之銘層,其中,緩衝銘層與銘層 之,厚比為1:1,亦以溫度34。。〇、時間3。分鐘進行退火,二 以掃描式電子顯微鏡(SEM)觀察鋁層上方,發現小凸起可完全 φ :皮抑制而無法產生,但其剖面結構因造成紹層之過敍刻使得緩 衝鋁層蝕刻不足留下過長之緩衝鋁層。 在玻璃基板上先沈積膜厚約3〇〇 A之緩衝鋁 層,再沈積膜厚約為2500 Λ之鋁層,其中,緩衝鋁層與鋁層 之膜厚比為1:8.3,/亦以温度34(rc、時間3〇分鐘進行退火, 再以掃描式電子顯微鏡(SEM)觀察鋁層上方,在退火後會產生 小凸起,此膜厚比尚無法完全緩和基板與鋁層之應力,且其剖 I 面結構(Profile)不佳造成緩衝鋁層過蝕刻。 在玻璃基板上先沈積膜厚約4〇〇人之緩衝铭 層,再沈積膜厚約為2500 Λ之鋁層,其中,緩衝鋁層與鋁層 之膜厚比為1:6_3,亦以溫度340。〇、時間30分鐘進行退火, 再以掃描式電子顯微鏡(SEM)觀察鋁層上方,發現小凸起可完 全被抑制而無法產生,且可得到良好之剖面結構。 在玻璃基板上先沈積膜厚約600人之緩衝鋁 層,再沈積膜厚約為2500 Λ之鋁層,其中,緩衝鋁層與鋁層 15 1246874 之膜厚比為1:4·2,亦以溫度34〇χ、時間3〇分鐘進行退火, ^以知描式電子顯微鏡(SEM)觀察鋁層上方,發現小凸起可完 全被抑制而無法產生,且可得到良好之剖面結構。 在玻璃基板上先沈積膜厚約7〇〇厶之緩衝鋁 ★再沈積膜厚約為2500 Λ之鋁層,其中,緩衝鋁層與鋁層 之膜2比為1:3.6,亦以溫度34(rC、時間3〇分鐘進行退火, 再以掃祂式電子顯微鏡(SEM)觀察鋁層上方,發現小凸起可完 馨王被抑制而無法產生,且可得到良好之剖面結構。 土^一在玻璃基板上先沈積膜厚約125〇八之緩衝鋁 層,再沈積膜厚約為2500 A之铭層,其中,緩衝紹層與銘層 之膜厚比為1:2,亦以溫度34(rc、時間%分鐘進行退火,再 以掃描式電子顯微鏡(SEM)觀察鋁層上方,發現小凸起可完全 被抑制而無法產生,且可得到良好之剖面結構。In the case where the buffer aluminum layer is buffered, the film thickness ratio of the buffer aluminum layer to the aluminum layer is 1:1 0, and the aluminum layer is observed to have small bumps and cross-sectional structures after annealing, and the film thickness ratio is not completely complete. The stress of the substrate and the aluminum layer is alleviated and the profile of the profile is poor. Experiment 3 As in the method of Experiment 2, a buffered aluminum layer was deposited on the glass substrate, and the film thickness was about 300 Å. Next, a layer of a layer is deposited over the buffer layer, and the film thickness is about 2000 Å. At this time, the film thickness ratio of the buffer aluminum layer to the aluminum layer is 1:6. After annealing at 340 ° C and tempering time for 30 minutes, the aluminum layer was observed by scanning electron microscopy (SEM). The aluminum layer was observed to have small protrusions and cross-sectional structure after annealing. The film thickness ratio is not complete. The stress of the substrate and the aluminum layer is alleviated and the profile of the profile is poor, resulting in over-etching of the buffered aluminum layer. Experiment 4 As in the second and third methods, in the fourth experiment, a buffer layer of about 400 A was deposited on the glass substrate. Next, a 12 1246874 aluminum layer having a film thickness of about 2000 A is deposited over the buffer layer, and the film thickness ratio of the buffer aluminum layer to the aluminum layer is 1:5. The observation results show that a 2,000 A aluminum layer and a 400 A aluminum oxide layer (ΑΙΟχ) are deposited on the above 400 A aluminum nitride layer (AINx), and a 2000 A layer is deposited on the Lu layer and 400 into the nitrogen oxide layer. On the AlOxNy), a layer of 2000 A is deposited. In the case where the buffer layer of the 40 〇A buffer is used, the film thickness ratio of the buffer layer to the chain layer is 1:5, and the underlayer is observed to be slightly convex after annealing. Since it can be completely suppressed and cannot be produced, it can be seen that the film thickness ratio of 1:5 can effectively suppress the stress of the substrate and the aluminum layer and a good cross-sectional structure can be obtained. On the glass substrate, a buffer layer of about 5 〇〇A is deposited first, and the thickness of the deposited layer is about 2000 A. The film thickness ratio of the buffer layer to the layer is 1:4, and the aluminum layer is annealed. Small bumps can be completely suppressed and cannot be produced. The composite house first deposits a buffer layer of about 6 膜 on the glass substrate, and then deposits an aluminum layer with a film thickness of about 2000 Å. The film thickness ratio of the buffer aluminum layer to the aluminum layer is 1:3_3, aluminum. After the layer is annealed, the small protrusions can be completely suppressed and cannot be produced and a good cross-sectional structure can be obtained. On the glass substrate, a buffer layer of about 10 Å is deposited on the glass substrate, and an aluminum layer with a film thickness of about 2000 Å is deposited. The film thickness ratio of the buffer aluminum layer to the aluminum layer is 1:2, and the aluminum layer is After annealing, the small protrusions are completely suppressed and cannot be produced and a good cross-sectional structure can be obtained. A buffer aluminum layer with a film thickness of about 15 Å is deposited on the glass substrate, and an aluminum layer with a film thickness of about 2000 Å is deposited. The film thickness ratio of the buffer aluminum layer to the aluminum layer is 1:1.3 Å. After the annealing, the small protrusions can be completely suppressed and cannot be produced, but the 13 1246874 ^ d surface, and the alpha structure cause the over-etching of the aluminum layer, so that the buffer aluminum layer is insufficiently etched to leave an excessively long buffer layer. - depositing a buffered aluminum having a film thickness of about 2 Å on the glass substrate: a film thickness ratio of the aluminum layer buffered aluminum layer to the aluminum layer of about 2,000 Å and a film thickness of about 2,000 Å, the layer is After annealing, the small bumps can be completely suppressed and cannot be produced, but the cross-section of the structure causes the layer to pass (4), so that the buffer (4) (four) is insufficient to leave too long buffer! Lu layer. Similarly, in Experiments 4 to 9, annealing was also carried out at a temperature of 30 minutes, and the upper portion of the aluminum layer was observed by a scanning electron microscope (Sem), and it was found that the small protrusions were completely suppressed and could not be produced. < Fish soil and the above experiment 2 on the glass substrate first deposited a film thickness of about 25 〇 buffer _, and then immersed in the thickness of about 4 1 _ 铭 铭 layer, the towel, buffer layer and aluminum layer film thickness ratio is 1: 7_2, also annealed at a temperature of 340 ° C for 30 minutes, and then observed above the aluminum layer by scanning electron microscopy (SEM). After annealing, S produced small protrusions, which could not completely alleviate the substrate and aluminum. The stress of the layer and its poor profile result in over-etching of the buffered aluminum layer. ΐ·土土二__1 Firstly, a buffered aluminum layer with a film thickness of about 3 Å is deposited on the glass substrate, and a film thickness of about 1800 Å is deposited on the glass substrate, wherein the film thickness ratio of the buffer aluminum layer to the aluminum layer is It was 1:6, and it was annealed at a temperature of 34 ° C for 3 minutes. The upper layer of the aluminum layer was observed by a scanning electron microscope (SEM). It was found that the small protrusions were completely suppressed and could not be produced, and Good cross-sectional structure. . A buffer layer having a film thickness of about 90 〇a is deposited on the glass substrate, and an aluminum layer having a film thickness of about 1800 Å is deposited, wherein the film thickness ratio of the buffer aluminum layer to the aluminum layer 14 1246874 is 1:2. The temperature is 34 〇. After annealing for 3 minutes, the top layer of the inscription was observed by a scanning electron microscope (SEM), and it was found that the small protrusions were completely suppressed and could not be produced, and a good cross-sectional structure was obtained. The fork first deposits a buffer aluminum layer with a thickness of about 18 在 on the glass substrate, and then deposits a layer with a thickness of about (10) Ο A, wherein the thickness of the buffer layer is 1:1, and the thickness ratio is 1:1. Take the temperature 34. . Oh, time 3. Annealing was performed in minutes, and the upper layer of the aluminum layer was observed by scanning electron microscopy (SEM). It was found that the small protrusions could be completely φ: the skin was suppressed and could not be produced, but the cross-sectional structure caused the etching of the buffered aluminum layer due to the over-synchronization of the layer. Leave a long buffered aluminum layer. A buffer aluminum layer having a film thickness of about 3 Å is deposited on the glass substrate, and an aluminum layer having a film thickness of about 2500 Å is deposited, wherein the film thickness ratio of the buffer aluminum layer to the aluminum layer is 1:8.3, Annealing at a temperature of 34 rc for 3 minutes, and observing the upper layer of the aluminum layer by a scanning electron microscope (SEM), a small protrusion is formed after annealing, and the film thickness ratio cannot completely alleviate the stress of the substrate and the aluminum layer. And the profile of the profile is poor, causing the buffer aluminum layer to be over-etched. On the glass substrate, a buffer layer of about 4 Å is deposited first, and then an aluminum layer having a film thickness of about 2500 Å is deposited. The film thickness ratio of the buffer aluminum layer to the aluminum layer is 1:6_3, and the temperature is also 340. The annealing time is 30 minutes, and the upper layer of the aluminum layer is observed by a scanning electron microscope (SEM), and it is found that the small protrusion can be completely suppressed. It can not be produced, and a good cross-sectional structure can be obtained. A buffer aluminum layer with a film thickness of about 600 people is deposited on the glass substrate, and an aluminum layer with a film thickness of about 2500 Å is deposited, wherein the buffer aluminum layer and the aluminum layer 15 1246874 The film thickness ratio is 1:4·2, and it is also at a temperature of 34 〇χ and time 3 〇 minutes. Annealing, ^ observation of the upper layer of the aluminum layer by electron microscopy (SEM), found that the small protrusion can be completely suppressed and can not be produced, and a good cross-sectional structure can be obtained. On the glass substrate, the film thickness is about 7〇〇.缓冲 缓冲 buffer aluminum ★ redeposited film thickness of about 2500 铝 aluminum layer, wherein the ratio of buffer aluminum layer to aluminum film 2: 1:3.6, also temperature 34 (rC, time 3 〇 minutes annealing, then Scanning his electron microscope (SEM) to observe the upper layer of the aluminum layer, it is found that the small protrusion can be suppressed and can not be produced, and a good cross-sectional structure can be obtained. The soil is first deposited on the glass substrate by about 125 〇. The buffered aluminum layer is re-deposited with a thickness of about 2500 A. The film thickness ratio of the buffer layer to the inscription layer is 1:2, and the temperature is 34 (rc, time % minute annealing, and then scanning) An electron microscope (SEM) was observed above the aluminum layer, and it was found that the small protrusions were completely suppressed and could not be produced, and a good cross-sectional structure was obtained.
1»致土ik—在玻璃基板上先沈積膜厚約25〇〇 A之緩衝鋁 層,再沈積膜厚約為25〇〇 A之μ,其中,緩衝㈣能層 之膜厚比為1:1,亦以溫度34(rc、時間3〇分鐘進行退火,再 以掃描式電子顯微鏡(SEM)觀察鋁層上方,發 被抑制而無法產生,伸豆叫面钍構因泸此釭庶 凸I了凡王 彳一,、°]面、纟0構因以成鋁層之過蝕刻使得緩 衝鋁層蝕刻不足留下過長之緩衝鋁層。 、、 @在玻璃基板上先沈積膜厚$ 600 A之緩_ ^再/尤積膜厚約為4500 A之铭層,J:中,绘y ^ ^ ^ ^ ^ /、中緩衝鋁層與鋁層 〈膜厗比為1·_7·5,亦以溫度34〇χ、時間扣分鐘進行退火, 16 1246874 再以掃描式電子顯微鏡(SEM)觀察鋁層上方,在退火後會產生 小凸起,此膜厚比尚無法完全緩和基板與鋁層之應力,且其剖 面結構(Profile)不佳造成緩衝鋁層過蝕刻。 ϋ驗一十 在玻璃基板上先沈積膜厚約750人之緩衝鋁 層,再沈積膜厚約為4500人之鋁層,其中,缓衝鋁層與鋁層 之膜厚比為1:6,亦以溫度340Χ、時間3〇分鐘進行退火,再 以掃彳田式电子顯微鏡(SεΜ)觀察銘層上方,發現小凸起可完全 被抑制而無法產生,且可得到良好之剖面結構。 實驗二十二 在玻璃基板上先沈積膜厚約15〇〇 Α之緩衝 鋁層^再沈積膜厚約為45〇〇 A之鋁層,其中,緩衝鋁層與鋁 層之,厚比為1:3,亦以溫度340X、時間30分鐘進行退火, 再以掃祂式電子顯微鏡(SEM)觀察鋁層上方,發現小凸起可完 王被抑制而無法產生,且可得到良好之剖面結構。 在玻璃基板上先沈積膜厚約2250 A之緩衝 鋁層,再沈積膜厚約為4500人之鋁層,其中,緩衝鋁層與鋁 層之,厚比為1:2,亦以溫度340X、時間30分鐘進行退火, 再以掃祂式電子顯微鏡(SEM)觀察鋁層上方,發現小凸起可完 全被抑制而無法產生,且可得到良好之剖面結構。 在玻璃基板上先沈積膜厚約4500 A之緩衝 声€ *再/尤積膜厚約為4500 A之鋁層,其中,緩衝鋁層與鋁 、'旱比為1 _1,亦以溫度340°C、時間30分鐘進行退火, 再以知描式電子顯微鏡(SEM)觀察鋁層上方,發現小凸起可完 17 1246874 之過钱刻使得 王被抑制而無法產生,但其剖面結構因造成銘層 缓衝銘層蝕刻不足留下過長之緩衝銘層。s 综合上述實驗可知,欲形成不具小凸起之紹金 金屬層係包括:一绣種^展 匕紹 衝叙^ κ 形成於基板上及層形成於緩 層之上方;其中,銘層之厚度於1_ A〜4500 A之間, ^該緩衝!呂層可有效抑制基板與㈣因熱膨脹係數差異^大 l成之應力,而且該緩衝|g層的組成可為氮化紹(A丨1»The soil ik—firstly deposit a buffer aluminum layer with a film thickness of about 25 〇〇A on the glass substrate, and then deposit a film thickness of about 25 〇〇A, wherein the buffer (four) energy layer has a film thickness ratio of 1: 1, also anneal at a temperature of 34 (rc, time 3 〇 minutes, and then observe the top of the aluminum layer by scanning electron microscopy (SEM), the hair is suppressed and can not be produced, the bean is called the surface 钍 泸 泸 釭庶 釭庶 釭庶The over-etching of the aluminum layer by the over-etching of the aluminum layer results in an excessively long buffered aluminum layer. @, @, deposited a film thickness of $600 on the glass substrate. The slowness of A _ ^ / / film thickness is about 4500 A layer, J: middle, painted y ^ ^ ^ ^ ^ /, medium buffer aluminum layer and aluminum layer < film 厗 ratio is 1·_7·5, Annealing was also performed at a temperature of 34 〇χ and time deduction. 16 1246874 was observed by scanning electron microscopy (SEM) above the aluminum layer. After annealing, small protrusions were formed. This film thickness ratio could not completely relax the substrate and aluminum layer. The stress and the poor profile of the profile result in over-etching of the buffered aluminum layer. A test of a buffered aluminum layer with a thickness of about 750 is deposited on the glass substrate. , a re-deposited aluminum layer having a film thickness of about 4,500, wherein the buffer aluminum layer and the aluminum layer have a film thickness ratio of 1:6, and are also annealed at a temperature of 340 Å for 3 minutes, and then broom-type electrons The microscope (SεΜ) was observed above the inscription layer, and it was found that the small protrusions could be completely suppressed and could not be produced, and a good cross-sectional structure could be obtained. Experiment 22: A buffer aluminum layer with a film thickness of about 15 Å was deposited on the glass substrate. ^Re-deposited aluminum layer with a thickness of about 45 〇〇A, wherein the buffered aluminum layer and the aluminum layer have a thickness ratio of 1:3, and also annealed at a temperature of 340X for 30 minutes, and then an EW electron microscope (SEM) Observing the upper layer of the aluminum layer, it was found that the small protrusion could be suppressed and could not be produced, and a good cross-sectional structure could be obtained. On the glass substrate, a buffer aluminum layer with a film thickness of about 2250 A was deposited first, and the film thickness was further deposited. It is an aluminum layer of 4,500 people, wherein the buffered aluminum layer and the aluminum layer have a thickness ratio of 1:2, and are also annealed at a temperature of 340X for 30 minutes, and then viewed above the aluminum layer by a scanning electron microscope (SEM). It is found that the small protrusion can be completely suppressed and cannot be produced, and can be obtained well. Profile structure: Firstly, a buffer layer with a film thickness of about 4500 A is deposited on the glass substrate, and then an aluminum layer with a thickness of about 4500 A is deposited. The buffer aluminum layer and aluminum have a drought ratio of 1 _1. Annealing was carried out at a temperature of 340 ° C for 30 minutes, and then the upper layer of the aluminum layer was observed by a scanning electron microscope (SEM). It was found that the small protrusions could be used to make the king inhibited and could not be produced, but the cross-sectional structure was Due to the lack of etching of the inscription layer buffer layer, the buffer layer is too long. s Combining the above experiments, it is known that the metal layer of the Shaojin metal layer that does not have small protrusions includes: an embroidery type ^ exhibition 匕绍冲叙 ^ κ Formed on the substrate and the layer is formed above the retardation layer; wherein the thickness of the inscription layer is between 1_A and 4500 A, ^ the buffer! The layer can effectively inhibit the substrate and (4) the difference in thermal expansion coefficient, and the composition of the buffer layer can be nitrided (A丨
I呂(ΑΙΟχ)或含氮氧化轉|〇)xNy),而且緩触層與㉝層之: 比範圍約於1:6〜1:1之間。又 另外,由表二之一系列實驗可知··欲得到良好的剖面 (P_le),緩衝紹層之厚度係較佳地小於紹層之厚度;盆口 ,層=厚度於1_ A〜4500 A之間,且緩衝紹層與铭層之厚 度比範圍約於1:6〜1 __ 2之間。 雖然,在上述實施例中係以一層铭層為例做說明,但 明亚不以此為限,也可以是二、三、四、五層或更多層銘層: 只要在玻璃基板和㈣之間以—緩触層緩衝,即可達到抑制 j凸起之效果。甚至在貫際應用時,本發明之鋁層處亦可依兩 要而添加其他元素。而且關於緩衝㈣亦可以複合層之方式: 例如因不同的氮含量所形成之第一氮化銘、第二氮化紹、 弟二鼠化料,同樣的因不同的氧含量所形成之第—氧化銘、 第二氧化銘、第三氧化銘等;另外因不同的氧、氮含量所形成 之第一含氮氧化銘、第二含氮氧化銘、第三含氮氧化铭等;同 時亦可由氮化銘與氧化銘、氮化銘與含氮氧化銘、氧化銘與含 鼠氧化!S、氮化㈣氧仙與含氮氧化料,以上三者相互搭 配之多層式複合緩衝鋁層。 " 18 1246874 本發明上述實施例所揭露之不具小凸起之鋁金屬層,其優 點是:成本較傳統使用鉬或鉻等材料要大幅降低,製程簡易, 且可有效抑制小凸起的產生,因此,不會造成後續沉積他層的 不平坦,使元件的電子特性更穩定。I Lu (ΑΙΟχ) or nitrogen-containing oxidation turns |〇)xNy), and the contact layer and the 33 layer: the ratio range is between 1:6~1:1. In addition, from a series of experiments in Table 2, it is known that a good profile (P_le) is required, and the thickness of the buffer layer is preferably smaller than the thickness of the layer; the mouth, layer = thickness is 1_A~4500 A Between, and the thickness ratio of the buffer layer and the layer is between about 1:6~1 __ 2 . Although in the above embodiment, a layer of the layer is used as an example, Mingya is not limited thereto, and may be two, three, four, five or more layers: as long as the glass substrate and (4) The effect of suppressing the j-bump can be achieved by buffering between the layers. Even in the case of continuous application, other elements may be added to the aluminum layer of the present invention. Moreover, regarding the buffer (4), it is also possible to combine the layers: for example, the first nitriding, the second nitriding, the second squirrel, which are formed by different nitrogen contents, the same due to different oxygen contents - Oxidation Ming, Second Oxidation, Third Oxidation, etc.; additionally, the first nitrogen-containing oxidation, the second nitrogen-containing oxidation, the third nitrogen-containing oxidation, etc., formed by different oxygen and nitrogen contents; Niobium Ming and Oxidation Ming, Nitrogen Ming and Nitrogen Oxidation Ming, Oxidation Ming and Rat Oxidation! S, nitriding (tetra) oxolane and nitrogen-containing oxidizing agent, the above three are combined with a multi-layer composite buffer aluminum layer. " 18 1246874 The aluminum metal layer without the small protrusion disclosed in the above embodiments of the present invention has the advantages that the cost is greatly reduced compared with the conventional use of materials such as molybdenum or chromium, the process is simple, and the generation of small protrusions can be effectively suppressed. Therefore, it does not cause unevenness in the subsequent deposition of his layer, making the electronic characteristics of the element more stable.
本發明之不具鋁尖凸之金屬層,可應用於一電子元件,以 作為一導電圖案如電極、導線等。以下則以一薄膜電晶體(Thin film transistor)為例,說明應用本發明形成其金屬閘極。第3圖 繪示一薄膜電晶體之底閘極(bottom gate)之剖面示意圖。首 先,提供一基板300,且於基板300上方沉積一閘極層,並利用 微影與蝕刻技術圖案化閘極層,以形成一閘極310。其中,閘極層 的沈積方法如前述之方法,先沉積一緩衝紹層,然後,在緩衝銘 層上方沉積一鋁層。其中,缓衝鋁層與鋁層之厚度比範圍約於 1:6〜1:2之間,經過蝕刻製程後,可得到良好剖面結構。接著, 在鋁層上方沉積一金屬鉬(Mo)層或氮化鉬(MoN)層,膜厚範圍 約在300人〜1200 A之間。 接著’於閘極310上方形成一閘極絕緣層320。然後,利用 沈積、微影和银刻製程,形成一非晶石夕層330與一歐姆接觸層 (Ohmic Contactlayer)340 於閘極絕緣層 320 之上。 接著,形成一没極360與一源極365。形成方法是先將一金 屬層,如鉻、鋁等金屬,沉積於整個基板300之上,並利用微影 與蝕刻製程,對金屬層進行圖案化的步驟,則於閘極上方的金屬 層中’形成一暴露非晶石夕層330的開口,此時,一沒極360與一 源極365亦形成。其中汲極360及源極365係以一通道隔開。 然後,沉積一保護層370於整個基板300之上,並藉由微 影與蝕刻步驟,形成一開口於保護層370中,以暴露汲極360。 19 1246874 最後,一透明電極層380覆蓋於保護層370之上,並填滿暴露 至汲極360的開口,同樣的,再利用微影與蝕刻製程,圖案化 透明電極層380。 畜然,電子元件的種類十分多樣,而薄膜電晶體亦有許多 不同之製程,上述只是其中一實施例,因此應用本發明作為閘 極之方法並不以上述為限,甚至可將此法應用於汲極與源極金 屬層。而應用本發明所製成之電子元件,不但成本大幅降低, 亦可有效抑制小凸起或鋁尖凸的產生,其總阻值也較傳統完全 # 使用鋁鈥合金要來得低,對元件的電子特性有正面助益。 、、不上所述,雖然本發明已以較佳實施例揭露如上,然其並非用以限定 本發明,任何熟習此技藝者,在不脫離本發明之精神和顧内,當可作各 種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定 者為準。 【圖式簡單說明】 第1A圖繪示金屬沉積於玻璃基板之示意圖; 第1B圖繪示退火後的鋁於破璃基板之示意圖· 第2圖繪示依照本發明-較佳實施例之可抑制小凸起之 鋁層的示意圖;及 第3圖繪示一薄膜電晶體之底面板之剖面示意圖。 【圖式標號說明】 102、202、300 :基板 104 :晶粒(Grain) 20 1246874 106 :晶界(Grain Boundary) 110 :小凸起或鋁尖凸(Hillock) 204 :緩衝铭層(Barrier Aluminum Layer) 206 :鋁層 310 :閘極 320 :閘極絕緣層 330 :非晶矽層 340 :歐姆接觸層The metal layer of the present invention having no aluminum sharpness can be applied to an electronic component as a conductive pattern such as an electrode, a wire or the like. Hereinafter, a thin film transistor is taken as an example to illustrate the application of the present invention to form a metal gate thereof. Figure 3 is a schematic cross-sectional view showing the bottom gate of a thin film transistor. First, a substrate 300 is provided, and a gate layer is deposited over the substrate 300, and the gate layer is patterned by lithography and etching to form a gate 310. Wherein, the deposition method of the gate layer is as described above, first depositing a buffer layer, and then depositing an aluminum layer over the buffer layer. Wherein, the thickness ratio of the buffer aluminum layer to the aluminum layer is in the range of about 1:6 to 1:2, and after the etching process, a good cross-sectional structure can be obtained. Next, a metal molybdenum (Mo) layer or a molybdenum nitride (MoN) layer is deposited over the aluminum layer to a thickness ranging from about 300 to about 1200 Å. A gate insulating layer 320 is then formed over the gate 310. Then, an amorphous layer 330 and an ohmic contact layer 340 are formed over the gate insulating layer 320 by a deposition, lithography, and silver etching process. Next, a dipole 360 and a source 365 are formed. The method comprises the steps of: depositing a metal layer, such as a metal such as chromium or aluminum, on the entire substrate 300, and patterning the metal layer by using a lithography and etching process, in the metal layer above the gate 'An opening is formed which exposes the amorphous layer 330. At this time, a dipole 360 and a source 365 are also formed. The drain 360 and the source 365 are separated by a channel. Then, a protective layer 370 is deposited over the entire substrate 300, and an opening is formed in the protective layer 370 by the lithography and etching steps to expose the drain 360. 19 1246874 Finally, a transparent electrode layer 380 overlies the protective layer 370 and fills the opening exposed to the drain 360. Similarly, the transparent electrode layer 380 is patterned by a lithography and etching process. In view of the fact that the types of electronic components are very diverse, and the thin film transistors have many different processes, the above is only one embodiment. Therefore, the method of applying the present invention as a gate is not limited to the above, and the method can be applied even. On the bungee and source metal layers. The electronic component produced by the invention not only has a large cost reduction, but also can effectively suppress the occurrence of small protrusions or aluminum protrusions, and the total resistance value thereof is lower than that of the conventional aluminum alloy. Electronic features are positive. The present invention has been described above by way of a preferred embodiment, and is not intended to limit the present invention. Any person skilled in the art can make various kinds without departing from the spirit and scope of the present invention. The scope of protection of the present invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A is a schematic view showing a metal deposited on a glass substrate; FIG. 1B is a schematic view showing an annealed aluminum on a glass substrate; FIG. 2 is a view showing a preferred embodiment according to the present invention. A schematic diagram of suppressing the aluminum layer of the small bump; and FIG. 3 is a schematic cross-sectional view of the bottom panel of the thin film transistor. [Description of Drawings] 102, 202, 300: Substrate 104: Grain 20 1246874 106: Grain Boundary 110: Small bump or aluminum bump (Hillock) 204: Buffer Aluminum (Barrier Aluminum) Layer) 206: aluminum layer 310: gate 320: gate insulating layer 330: amorphous germanium layer 340: ohmic contact layer
360 :汲極 365 :源極 370 :保護層 380 :透明電極層360: bungee 365: source 370: protective layer 380: transparent electrode layer
21twenty one
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TW93103832A TWI246874B (en) | 2004-02-17 | 2004-02-17 | Hillock-free aluminum metal layer and method of forming the same |
JP2004193115A JP4729661B2 (en) | 2003-07-11 | 2004-06-30 | Aluminum layer free from hillocks and method for forming the same |
US10/885,782 US7235310B2 (en) | 2003-07-11 | 2004-07-08 | Hillock-free aluminum layer and method of forming the same |
KR1020040053579A KR101070761B1 (en) | 2003-07-11 | 2004-07-09 | Hillock-free aluminum layer and method of forming the same |
US11/802,350 US7944056B2 (en) | 2003-07-11 | 2007-05-22 | Hillock-free aluminum layer and method of forming the same |
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TW200529708A TW200529708A (en) | 2005-09-01 |
TWI246874B true TWI246874B (en) | 2006-01-01 |
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WO2015188476A1 (en) * | 2014-06-10 | 2015-12-17 | 京东方科技集团股份有限公司 | Thin film transistor and manufacturing method therefor, oled back panel and display device |
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CN102477531B (en) * | 2010-11-26 | 2015-03-25 | 鸿富锦精密工业(深圳)有限公司 | Coating part and preparation method thereof |
CN102677007A (en) * | 2011-03-14 | 2012-09-19 | 鸿富锦精密工业(深圳)有限公司 | Aluminum or aluminum alloy shell and manufacturing method thereof |
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WO2015188476A1 (en) * | 2014-06-10 | 2015-12-17 | 京东方科技集团股份有限公司 | Thin film transistor and manufacturing method therefor, oled back panel and display device |
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