JP2005005699A - ウェーハ製造方法 - Google Patents
ウェーハ製造方法 Download PDFInfo
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- JP2005005699A JP2005005699A JP2004150897A JP2004150897A JP2005005699A JP 2005005699 A JP2005005699 A JP 2005005699A JP 2004150897 A JP2004150897 A JP 2004150897A JP 2004150897 A JP2004150897 A JP 2004150897A JP 2005005699 A JP2005005699 A JP 2005005699A
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- 238000000034 method Methods 0.000 title claims abstract description 79
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000002131 composite material Substances 0.000 claims description 94
- 239000000463 material Substances 0.000 claims description 91
- 239000000758 substrate Substances 0.000 claims description 73
- 238000000137 annealing Methods 0.000 claims description 54
- 239000000203 mixture Substances 0.000 claims description 33
- 238000010438 heat treatment Methods 0.000 claims description 19
- 230000035939 shock Effects 0.000 claims description 12
- 238000000638 solvent extraction Methods 0.000 claims description 12
- 230000006378 damage Effects 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- 150000002367 halogens Chemical class 0.000 claims description 4
- 229910052724 xenon Inorganic materials 0.000 claims description 4
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 4
- 238000001228 spectrum Methods 0.000 claims description 3
- 238000003786 synthesis reaction Methods 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 229920002994 synthetic fiber Polymers 0.000 abstract 5
- 235000012431 wafers Nutrition 0.000 description 27
- 238000002513 implantation Methods 0.000 description 7
- 230000003313 weakening effect Effects 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Element Separation (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
【解決手段】不均質材料合成物9が、その所定の分割領域で分割されるウェーハ製造方法に関し、該合成物9は熱処理にかけられるものであり、合成物9が分割される前に止める合成物9のアニールと、所定の分割領域5で合成物を分割するための光子12の合成物9への照射とを含む。
【選択図】 図3
Description
Claims (16)
- 不均質材料合成物(9)が該合成物(9)の所定の分割領域(5)で分割されるウェーハ製造方法であり、前記合成物(9)が熱処理にかけられ、
前記熱処理が、
前記合成物(9)が分割される前に止める前記合成物(9)のアニール(140、141)と、
前記所定の分割領域(5)で前記合成物(9)を分割するための光子(12)の前記合成物(9)への照射(150、151、153、160、161、162、163、164)とを含むことを特徴とする方法。 - 前記アニール工程(140、141)を、前記合成物(9)が分割されうる熱分割に対する見積量の、最高で99%、好ましくは約70〜99%のエネルギーで行うことを特徴とする請求項1に記載の方法。
- 前記光子(12)を、前記合成物の材料(1、2)のうちの少なくとも1つに吸収されうる波長で照射することを特徴とする請求項1または2に記載の方法。
- 前記照射(150、151、153、160、161、162、163、164)を、前記不均質材料合成物(9)の一部でありかつ前記所定の分割領域(5)が形成される前記合成物(9)の供与材料(1)の一部を受け入れる働きをする受入基板(2)を通して行うことを特徴とする請求項1〜3のいずれか1項に記載の方法。
- 前記照射(150、151、153、160、161、162、163、164)を、前記所定の分割領域(5)が形成される、前記不均質材料合成物(9)の一部である供与基板(1)を通して行うことを特徴とする請求項1〜4のいずれか1項に記載の方法。
- 前記不均質材料合成物(9)の材料(1、2)であり、その熱膨張率が高い方にまたはその近くにヒートシンク(13)があてがわれることを特徴とする請求項1〜5のいずれか1項に記載の方法。
- 前記アニール工程(140、141)が、光子(12)の照射を含むことを特徴とする請求項1〜6のいずれか1項に記載の方法。
- 前記アニール工程(140、141)および前記照射工程(150、151、153、160、161、162、163、164)を、1つの装置で行うことを特徴とする請求項1〜7のいずれか1項に記載の方法。
- 前記光子(12)を、非干渉性の光およびレーザー光からなる群から選択することを特徴とする請求項1〜8のいずれか1項に記載の方法。
- 前記照射(150、151、153、160、161、162、163、164)を、2次元的に前記合成物(9)の表面全体にわたって施すことを特徴とする請求項1〜9のいずれか1項に記載の方法。
- 前記光子(12)で前記合成物(9)上を走査することを特徴とする請求項1〜9のいずれか1項に記載の方法。
- 前記照射(163、164)によって、分割のために前記不均質材料合成物(9)に熱衝撃を加えることを特徴とする請求項1〜11のいずれか1項に記載の方法。
- 前記アニール工程(140、141)と前記照射工程(150、151、153、160、161、162、163、164)の間に、前記合成物(9)を約18℃から25℃の室温(TR)に冷却することを特徴とする請求項1〜12のいずれか1項に記載の方法。
- 前記照射工程(164)を、前記合成物(9)がその不定的な破壊が起こりうる閾値温度(TThr)よりも低い温度でありかつ前記合成物(9)が前記アニール工程(140)の温度(TBmax1)から室温(TR)に冷える期間内に行うことを特徴とする請求項1〜13のいずれか1項に記載の方法。
- 前記照射(150、151、153、160、161、162、163、164)を、キセノン・ランプおよび/またはハロゲン・ランプを用いて行うことを特徴とする請求項1〜14のいずれか1項に記載の方法。
- 照射フィルタを用いて、選ばれた波長またはスペクトルの照射を施すことを特徴とする請求項1〜15のいずれか1項に記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03291252.9A EP1482548B1 (en) | 2003-05-26 | 2003-05-26 | A method of manufacturing a wafer |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005005699A true JP2005005699A (ja) | 2005-01-06 |
JP4290068B2 JP4290068B2 (ja) | 2009-07-01 |
Family
ID=33104205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004150897A Expired - Lifetime JP4290068B2 (ja) | 2003-05-26 | 2004-05-20 | ウェーハ製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6838358B2 (ja) |
EP (1) | EP1482548B1 (ja) |
JP (1) | JP4290068B2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007525018A (ja) * | 2003-10-01 | 2007-08-30 | ウェーハマスターズ・インコーポレイテッド | フラッシュアニールを使用した選択的な加熱 |
WO2010055857A1 (ja) * | 2008-11-12 | 2010-05-20 | 信越化学工業株式会社 | Soi基板の作製方法 |
WO2018159401A1 (ja) * | 2017-03-02 | 2018-09-07 | 株式会社ブイ・テクノロジー | レーザリフトオフ装置及びレーザリフトオフ方法 |
JP2020188205A (ja) * | 2019-05-16 | 2020-11-19 | パナソニックIpマネジメント株式会社 | Iii族窒化物半導体デバイスの製造方法 |
Families Citing this family (22)
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EP1429381B1 (en) * | 2002-12-10 | 2011-07-06 | S.O.I.Tec Silicon on Insulator Technologies | A method for manufacturing a material compound |
KR100634528B1 (ko) * | 2004-12-03 | 2006-10-16 | 삼성전자주식회사 | 단결정 실리콘 필름의 제조방법 |
FR2883659B1 (fr) * | 2005-03-24 | 2007-06-22 | Soitec Silicon On Insulator | Procede de fabrication d'une hetero-structure comportant au moins une couche epaisse de materiau semi-conducteur |
US20070026584A1 (en) * | 2005-07-29 | 2007-02-01 | Texas Instruments Inc. | Dielectric isolated body biasing of silicon on insulator |
JP5042506B2 (ja) * | 2006-02-16 | 2012-10-03 | 信越化学工業株式会社 | 半導体基板の製造方法 |
FR2899594A1 (fr) * | 2006-04-10 | 2007-10-12 | Commissariat Energie Atomique | Procede d'assemblage de substrats avec traitements thermiques a basses temperatures |
US8124499B2 (en) * | 2006-11-06 | 2012-02-28 | Silicon Genesis Corporation | Method and structure for thick layer transfer using a linear accelerator |
US20080128641A1 (en) * | 2006-11-08 | 2008-06-05 | Silicon Genesis Corporation | Apparatus and method for introducing particles using a radio frequency quadrupole linear accelerator for semiconductor materials |
US20080188011A1 (en) * | 2007-01-26 | 2008-08-07 | Silicon Genesis Corporation | Apparatus and method of temperature conrol during cleaving processes of thick film materials |
FR2914496B1 (fr) | 2007-03-29 | 2009-10-02 | Soitec Silicon On Insulator | Amelioration de la defectivite post decollement d'une couche mince par modification de son recuit de decollement. |
JP5389627B2 (ja) * | 2008-12-11 | 2014-01-15 | 信越化学工業株式会社 | ワイドバンドギャップ半導体を積層した複合基板の製造方法 |
JP4979732B2 (ja) * | 2009-05-01 | 2012-07-18 | 信越化学工業株式会社 | 貼り合わせウェーハの製造方法 |
JP2010278337A (ja) * | 2009-05-29 | 2010-12-09 | Shin-Etsu Chemical Co Ltd | 表面欠陥密度が少ないsos基板 |
JP2010278338A (ja) * | 2009-05-29 | 2010-12-09 | Shin-Etsu Chemical Co Ltd | 界面近傍における欠陥密度が低いsos基板 |
WO2011011764A2 (en) * | 2009-07-23 | 2011-01-27 | Gigasi Solar, Inc. | Systems, methods and materials involving crystallization of substrates using a seed layer, as well as products produced by such processes |
US8361890B2 (en) | 2009-07-28 | 2013-01-29 | Gigasi Solar, Inc. | Systems, methods and materials including crystallization of substrates via sub-melt laser anneal, as well as products produced by such processes |
US8629436B2 (en) * | 2009-08-14 | 2014-01-14 | Gigasi Solar, Inc. | Backside only contact thin-film solar cells and devices, systems and methods of fabricating same, and products produced by processes thereof |
US20110165721A1 (en) * | 2009-11-25 | 2011-07-07 | Venkatraman Prabhakar | Systems, methods and products including features of laser irradiation and/or cleaving of silicon with other substrates or layers |
JP5643509B2 (ja) * | 2009-12-28 | 2014-12-17 | 信越化学工業株式会社 | 応力を低減したsos基板の製造方法 |
RU2469433C1 (ru) * | 2011-07-13 | 2012-12-10 | Юрий Георгиевич Шретер | Способ лазерного отделения эпитаксиальной пленки или слоя эпитаксиальной пленки от ростовой подложки эпитаксиальной полупроводниковой структуры (варианты) |
FR3039699B1 (fr) * | 2015-07-31 | 2017-07-28 | Commissariat Energie Atomique | Procede de realisation d'un dispositif electronique |
FR3126809A1 (fr) * | 2021-09-06 | 2023-03-10 | Soitec | Procede de transfert d’une couche utile sur une face avant d’un substrat support |
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2003
- 2003-05-26 EP EP03291252.9A patent/EP1482548B1/en not_active Expired - Lifetime
- 2003-11-18 US US10/716,900 patent/US6838358B2/en not_active Expired - Lifetime
-
2004
- 2004-05-20 JP JP2004150897A patent/JP4290068B2/ja not_active Expired - Lifetime
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2007525018A (ja) * | 2003-10-01 | 2007-08-30 | ウェーハマスターズ・インコーポレイテッド | フラッシュアニールを使用した選択的な加熱 |
WO2010055857A1 (ja) * | 2008-11-12 | 2010-05-20 | 信越化学工業株式会社 | Soi基板の作製方法 |
JP2010141305A (ja) * | 2008-11-12 | 2010-06-24 | Shin-Etsu Chemical Co Ltd | Soi基板の作製方法 |
US8563401B2 (en) | 2008-11-12 | 2013-10-22 | Shin-Etsu Chemical Co., Ltd. | Method for fabricating SOI substrate |
KR101578964B1 (ko) * | 2008-11-12 | 2015-12-18 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Soi 기판의 제작 방법 |
WO2018159401A1 (ja) * | 2017-03-02 | 2018-09-07 | 株式会社ブイ・テクノロジー | レーザリフトオフ装置及びレーザリフトオフ方法 |
JP2020188205A (ja) * | 2019-05-16 | 2020-11-19 | パナソニックIpマネジメント株式会社 | Iii族窒化物半導体デバイスの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US6838358B2 (en) | 2005-01-04 |
JP4290068B2 (ja) | 2009-07-01 |
US20040241960A1 (en) | 2004-12-02 |
EP1482548A1 (en) | 2004-12-01 |
EP1482548B1 (en) | 2016-04-13 |
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