JP2004535066A - ナノスケールワイヤ及び関連デバイス - Google Patents

ナノスケールワイヤ及び関連デバイス Download PDF

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JP2004535066A
JP2004535066A JP2003511316A JP2003511316A JP2004535066A JP 2004535066 A JP2004535066 A JP 2004535066A JP 2003511316 A JP2003511316 A JP 2003511316A JP 2003511316 A JP2003511316 A JP 2003511316A JP 2004535066 A JP2004535066 A JP 2004535066A
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Prior art keywords
semiconductor
article
doped
wire
less
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Japanese (ja)
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JP2004535066A5 (enExample
Inventor
リーバー，チャールズ・エム
デュアン，シャンフェン
クイ，イ
フアン，ユ
グディクセン，マーク・エス
ラウホン，リンカーン・ジェイ
ウォン，ジャンファン
パーク，ホンクン
ウェイ，チンチャオ
リャン，ウェンジー
スミス，デーヴィッド・シー
ウォン，デリ
チョン，チャオフイ
Original Assignee
プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ
ユニバーシティ・オブ・サザンプトン
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Priority claimed from US09/935,776 external-priority patent/US20020130311A1/en
Priority claimed from US10/020,004 external-priority patent/US7129554B2/en
Application filed by プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ, ユニバーシティ・オブ・サザンプトン filed Critical プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ
Publication of JP2004535066A publication Critical patent/JP2004535066A/ja
Publication of JP2004535066A5 publication Critical patent/JP2004535066A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/53—Immunoassay; Biospecific binding assay; Materials therefor
    • G01N33/543—Immunoassay; Biospecific binding assay; Materials therefor with an insoluble carrier for immobilising immunochemicals
    • G01N33/54366—Apparatus specially adapted for solid-phase testing
    • G01N33/54373—Apparatus specially adapted for solid-phase testing involving physiochemical end-point determination, e.g. wave-guides, FETS, gratings
    • G—PHYSICS
    • G11—INFORMATION STORAGE
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    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
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    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0019—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising bio-molecules
    • G—PHYSICS
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    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
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    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53276—Conductive materials containing carbon, e.g. fullerenes
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/123—Nanowire, nanosheet or nanotube semiconductor bodies comprising junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
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    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
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  • Urology & Nephrology (AREA)
  • Hematology (AREA)
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  • Computer Hardware Design (AREA)
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  • Food Science & Technology (AREA)
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  • Cell Biology (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Led Devices (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Transistors (AREA)
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JP2003511316A 2001-05-18 2002-05-20 ナノスケールワイヤ及び関連デバイス Pending JP2004535066A (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US29189601P 2001-05-18 2001-05-18
US29203501P 2001-05-18 2001-05-18
US29204501P 2001-05-18 2001-05-18
US29212101P 2001-05-18 2001-05-18
US09/935,776 US20020130311A1 (en) 2000-08-22 2001-08-22 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
US34831301P 2001-11-09 2001-11-09
US10/020,004 US7129554B2 (en) 2000-12-11 2001-12-11 Nanosensors
US35464202P 2002-02-06 2002-02-06
PCT/US2002/016133 WO2003005450A2 (en) 2001-05-18 2002-05-20 Nanoscale wires and related devices

Related Child Applications (1)

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JP2008156094A Division JP2008300848A (ja) 2001-05-18 2008-06-16 ナノスケールワイヤ及び関連デバイス

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JP2004535066A true JP2004535066A (ja) 2004-11-18
JP2004535066A5 JP2004535066A5 (enExample) 2005-12-22

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JP2003511316A Pending JP2004535066A (ja) 2001-05-18 2002-05-20 ナノスケールワイヤ及び関連デバイス
JP2008156094A Pending JP2008300848A (ja) 2001-05-18 2008-06-16 ナノスケールワイヤ及び関連デバイス

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EP (1) EP1436841A1 (enExample)
JP (2) JP2004535066A (enExample)
CA (1) CA2447728A1 (enExample)
WO (1) WO2003005450A2 (enExample)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007073556A (ja) * 2005-09-02 2007-03-22 National Institute Of Advanced Industrial & Technology 情報記録素子
WO2008105119A1 (ja) * 2007-02-27 2008-09-04 Inter-University Research Institute Corporation, National Institutes Of Natural Sciences 酸素ガス検出素子、及び酸素ガス検出素子用ナノワイヤ
WO2008149548A1 (ja) * 2007-06-06 2008-12-11 Panasonic Corporation 半導体ナノワイヤおよびその製造方法
JP2010024081A (ja) * 2008-07-17 2010-02-04 Nippon Telegr & Teleph Corp <Ntt> ナノワイヤ作製方法、ナノワイヤ素子及びナノワイヤ構造物
JP2011192787A (ja) * 2010-03-15 2011-09-29 Toshiba Corp 半導体記憶装置
US8198622B2 (en) 2006-12-13 2012-06-12 Panasonic Corporation Nanowire, device comprising nanowire, and their production methods
JP2012128401A (ja) * 2010-05-28 2012-07-05 Sekisui Chem Co Ltd 偏光性材料及びそれを含む偏光膜製造用塗料並びに偏光膜
KR20130047199A (ko) * 2011-10-31 2013-05-08 엘지디스플레이 주식회사 퀀텀 로드 발광 표시장치
KR20130047198A (ko) * 2011-10-31 2013-05-08 엘지디스플레이 주식회사 퀀텀 로드 발광 표시장치
KR20130059223A (ko) * 2011-11-28 2013-06-05 엘지디스플레이 주식회사 가전제품의 외면에 부착되는 장식부재
KR20130059221A (ko) * 2011-11-28 2013-06-05 엘지디스플레이 주식회사 퀀텀 로드 발광 표시소자
KR20130060473A (ko) * 2011-11-30 2013-06-10 엘지디스플레이 주식회사 퀀텀 로드 발광 표시장치

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002017362A2 (en) 2000-08-22 2002-02-28 President And Fellows Of Harvard College Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
US7301199B2 (en) 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
EP1342075B1 (en) 2000-12-11 2008-09-10 President And Fellows Of Harvard College Device contaning nanosensors for detecting an analyte and its method of manufacture
US7335908B2 (en) 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
WO2004010552A1 (en) * 2002-07-19 2004-01-29 President And Fellows Of Harvard College Nanoscale coherent optical components
WO2004027822A2 (en) 2002-09-05 2004-04-01 Nanosys, Inc. Oriented nanostructures and methods of preparing
US7491428B2 (en) 2002-12-04 2009-02-17 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Controlled deposition and alignment of carbon nanotubes
WO2004065926A1 (en) 2003-01-23 2004-08-05 William Marsh Rice University Smart materials: strain sensing and stress determination by means of nanotube sensing systems, composites, and devices
CA2522358A1 (en) 2003-04-04 2004-10-14 Startskottet 22286 Ab Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them
US7432522B2 (en) 2003-04-04 2008-10-07 Qunano Ab Nanowhiskers with pn junctions, doped nanowhiskers, and methods for preparing them
US7910064B2 (en) 2003-06-03 2011-03-22 Nanosys, Inc. Nanowire-based sensor configurations
US7026432B2 (en) 2003-08-12 2006-04-11 General Electric Company Electrically conductive compositions and method of manufacture thereof
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