JP2004533327A - 高温鉛フリーハンダ用組成物、方法およびデバイス - Google Patents

高温鉛フリーハンダ用組成物、方法およびデバイス Download PDF

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JP2004533327A
JP2004533327A JP2003500307A JP2003500307A JP2004533327A JP 2004533327 A JP2004533327 A JP 2004533327A JP 2003500307 A JP2003500307 A JP 2003500307A JP 2003500307 A JP2003500307 A JP 2003500307A JP 2004533327 A JP2004533327 A JP 2004533327A
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amount
composition
alloy
present
solder
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JP2004533327A5 (enExample
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ラレーナ，ジヨン
デイーン，ナンシー
ワイザー，マーテイン
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ハネウエル・インターナシヨナル・インコーポレーテツド
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    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/264—Bi as the principal constituent
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    • H01L2924/11—Device type
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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006167790A (ja) * 2004-12-20 2006-06-29 Matsushita Electric Ind Co Ltd はんだ材料の生産方法
WO2009084155A1 (ja) * 2007-12-27 2009-07-09 Panasonic Corporation 接合材料、電子部品および接合構造体
WO2010122795A1 (ja) * 2009-04-22 2010-10-28 パナソニック株式会社 半導体装置
WO2011001818A1 (ja) * 2009-07-01 2011-01-06 株式会社日立製作所 半導体装置および半導体装置の製造方法
WO2011036829A1 (ja) * 2009-09-24 2011-03-31 パナソニック株式会社 半導体装置及びその製造方法
WO2012002173A1 (ja) * 2010-06-30 2012-01-05 千住金属工業株式会社 Bi-Sn系高温はんだ合金
JP2012172178A (ja) * 2011-02-18 2012-09-10 Napra Co Ltd 合金材料、回路基板、電子デバイス及びその製造方法
DE112011102163T5 (de) 2010-06-28 2013-05-16 Sumitomo Metal Mining Co., Ltd. Pb-freie Lotlegierung
DE112011105017T5 (de) 2011-03-08 2013-12-19 Sumitomo Metal Mining Co., Ltd. Pb-freie Lotpaste
JP2014027314A (ja) * 2013-11-05 2014-02-06 Rohm Co Ltd 半導体装置および半導体装置の製造方法
JP2015202507A (ja) * 2014-04-14 2015-11-16 富士電機株式会社 高温はんだ合金
JP2017509489A (ja) * 2014-02-20 2017-04-06 ハネウェル・インターナショナル・インコーポレーテッド 鉛フリーはんだ組成物

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10147378A1 (de) * 2001-09-26 2003-02-20 Infineon Technologies Ag Bleifreies Weichlot, insbesondere Elektroniklot
JP2005095977A (ja) * 2003-08-26 2005-04-14 Sanyo Electric Co Ltd 回路装置
US8227536B2 (en) * 2005-08-11 2012-07-24 Senju Metal Industry Co., Ltd. Lead-free solder paste and its use
US9260768B2 (en) * 2005-12-13 2016-02-16 Indium Corporation Lead-free solder alloys and solder joints thereof with improved drop impact resistance
US20070138442A1 (en) * 2005-12-19 2007-06-21 Weiser Martin W Modified and doped solder alloys for electrical interconnects, methods of production and uses thereof
US20080118761A1 (en) * 2006-09-13 2008-05-22 Weiser Martin W Modified solder alloys for electrical interconnects, methods of production and uses thereof
JP2009158725A (ja) 2007-12-27 2009-07-16 Panasonic Corp 半導体装置およびダイボンド材
CN101332544A (zh) * 2008-05-28 2008-12-31 广州瀚源电子科技有限公司 高熔点无铅焊料及其生产工艺
WO2009157130A1 (ja) 2008-06-23 2009-12-30 パナソニック株式会社 接合構造および電子部品
CN101745752B (zh) * 2009-12-17 2011-12-14 北京有色金属研究总院 一种纳米增强铋基无铅高温焊料及其制备方法
CN102430873B (zh) * 2011-10-26 2015-06-03 浙江亚通焊材有限公司 一种高温电子封装用无铅钎料及其制备方法
CN103014401B (zh) * 2012-12-05 2014-12-03 昆明贵金属研究所 一种金合金及其制备方法
KR20140121211A (ko) * 2013-04-05 2014-10-15 부산대학교 산학협력단 고융점 무연 솔더 조성물, 고융점 무연 솔더 합금 제조방법 및 이의 용도
EP3047937A4 (en) * 2013-09-20 2017-05-17 Sumitomo Metal Mining Co., Ltd. Bi GROUP SOLDER ALLOY, METHOD FOR BONDING ELECTRONIC PART USING SAME, AND ELECTRONIC PART MOUNTING SUBSTRATE
KR101637288B1 (ko) * 2014-11-14 2016-07-07 현대자동차 주식회사 은 페이스트의 접합 방법
CN106001982A (zh) * 2016-07-08 2016-10-12 重庆科技学院 一种高熔点无铅铋银锡钎料及其制备方法
TWI647316B (zh) * 2016-07-15 2019-01-11 Ｊｘ金屬股份有限公司 Solder alloy
CN106914711B (zh) * 2017-04-13 2019-04-23 杭州哈尔斯实业有限公司 一种不锈钢真空容器用无铅焊料及其制造方法和钎焊方法
CN108004429A (zh) * 2017-11-29 2018-05-08 广西厚思品牌策划顾问有限公司 一种低熔点无铅焊料合金及其制备方法
FR3087369B1 (fr) * 2018-10-19 2021-06-04 Dehon Sa Alliage de brasure et utilisation d'un tel alliage
CN114248037A (zh) * 2021-12-28 2022-03-29 昆山市天和焊锡制造有限公司 一种高抗氧化性无铅焊锡材料

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5389160A (en) * 1993-06-01 1995-02-14 Motorola, Inc. Tin bismuth solder paste, and method using paste to form connection having improved high temperature properties
US5368814A (en) * 1993-06-16 1994-11-29 International Business Machines, Inc. Lead free, tin-bismuth solder alloys
ES2142008T3 (es) * 1996-01-31 2000-04-01 Leybold Materials Gmbh Blanco para proyeccion ionica constituido por estaño o una aleacion a base de estaño.
KR19980068127A (ko) * 1997-02-15 1998-10-15 김광호 납땜용 무연 합금
JP3249774B2 (ja) * 1997-06-05 2002-01-21 トヨタ自動車株式会社 摺動部材
JP3829475B2 (ja) * 1998-05-13 2006-10-04 株式会社村田製作所 Ｃｕ系母材接合用のはんだ組成物
JP2000094181A (ja) * 1998-09-24 2000-04-04 Sony Corp はんだ合金組成物
JP2001121285A (ja) * 1999-10-25 2001-05-08 Sumitomo Metal Mining Co Ltd ダイボンディング用半田合金

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JP2006167790A (ja) * 2004-12-20 2006-06-29 Matsushita Electric Ind Co Ltd はんだ材料の生産方法
WO2009084155A1 (ja) * 2007-12-27 2009-07-09 Panasonic Corporation 接合材料、電子部品および接合構造体
JP5383795B2 (ja) * 2009-04-22 2014-01-08 パナソニック株式会社 半導体装置
WO2010122795A1 (ja) * 2009-04-22 2010-10-28 パナソニック株式会社 半導体装置
US8691377B2 (en) 2009-04-22 2014-04-08 Panasonic Corporation Semiconductor device
WO2011001818A1 (ja) * 2009-07-01 2011-01-06 株式会社日立製作所 半導体装置および半導体装置の製造方法
WO2011036829A1 (ja) * 2009-09-24 2011-03-31 パナソニック株式会社 半導体装置及びその製造方法
US9199339B2 (en) 2010-06-28 2015-12-01 Sumitomo Metal Mining Co., Ltd. Pb-free solder alloy
DE112011102163T5 (de) 2010-06-28 2013-05-16 Sumitomo Metal Mining Co., Ltd. Pb-freie Lotlegierung
DE112011102163B4 (de) * 2010-06-28 2015-09-24 Sumitomo Metal Mining Co., Ltd. Pb-freie Lotlegierung
JP5278616B2 (ja) * 2010-06-30 2013-09-04 千住金属工業株式会社 Ｂｉ−Ｓｎ系高温はんだ合金
WO2012002173A1 (ja) * 2010-06-30 2012-01-05 千住金属工業株式会社 Bi-Sn系高温はんだ合金
US9205513B2 (en) 2010-06-30 2015-12-08 Senju Metal Industry Co., Ltd. Bi—Sn based high-temperature solder alloy
JP2012172178A (ja) * 2011-02-18 2012-09-10 Napra Co Ltd 合金材料、回路基板、電子デバイス及びその製造方法
DE112011105017T5 (de) 2011-03-08 2013-12-19 Sumitomo Metal Mining Co., Ltd. Pb-freie Lotpaste
US9227273B2 (en) 2011-03-08 2016-01-05 Sumitomo Metal Mining Co., Ltd. Pb-free solder paste
DE112011105017B4 (de) * 2011-03-08 2016-07-07 Sumitomo Metal Mining Co., Ltd. Pb-freie Lotpaste
US10046417B2 (en) 2011-08-17 2018-08-14 Honeywell International Inc. Lead-free solder compositions
US10661393B2 (en) 2011-08-17 2020-05-26 Honeywell International Inc. Lead-free solder compositions
JP2014027314A (ja) * 2013-11-05 2014-02-06 Rohm Co Ltd 半導体装置および半導体装置の製造方法
JP2017509489A (ja) * 2014-02-20 2017-04-06 ハネウェル・インターナショナル・インコーポレーテッド 鉛フリーはんだ組成物
JP2015202507A (ja) * 2014-04-14 2015-11-16 富士電機株式会社 高温はんだ合金

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KR20030096420A (ko) 2003-12-24
DE60126157D1 (de) 2007-03-08
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EP1399600B1 (en) 2007-01-17
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