JP2004531649A5 - - Google Patents
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- Publication number
- JP2004531649A5 JP2004531649A5 JP2003507878A JP2003507878A JP2004531649A5 JP 2004531649 A5 JP2004531649 A5 JP 2004531649A5 JP 2003507878 A JP2003507878 A JP 2003507878A JP 2003507878 A JP2003507878 A JP 2003507878A JP 2004531649 A5 JP2004531649 A5 JP 2004531649A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive material
- microelectronic substrate
- polishing pad
- polishing
- selecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 131
- 239000004020 conductor Substances 0.000 claims 123
- 238000004377 microelectronic Methods 0.000 claims 119
- 238000000034 method Methods 0.000 claims 116
- 238000005498 polishing Methods 0.000 claims 105
- 239000012530 fluid Substances 0.000 claims 43
- 239000000463 material Substances 0.000 claims 41
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 34
- 239000007788 liquid Substances 0.000 claims 22
- 229910052697 platinum Inorganic materials 0.000 claims 16
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 10
- 230000004888 barrier function Effects 0.000 claims 10
- 230000008878 coupling Effects 0.000 claims 10
- 238000010168 coupling process Methods 0.000 claims 10
- 238000005859 coupling reaction Methods 0.000 claims 10
- 230000003647 oxidation Effects 0.000 claims 9
- 238000007254 oxidation reaction Methods 0.000 claims 9
- 239000000126 substance Substances 0.000 claims 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 6
- 229910052802 copper Inorganic materials 0.000 claims 6
- 239000010949 copper Substances 0.000 claims 6
- 229910052751 metal Inorganic materials 0.000 claims 6
- 239000002184 metal Substances 0.000 claims 6
- 230000001590 oxidative effect Effects 0.000 claims 6
- 229910052721 tungsten Inorganic materials 0.000 claims 6
- 239000010937 tungsten Substances 0.000 claims 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 4
- 229920005591 polysilicon Polymers 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- 229910052741 iridium Inorganic materials 0.000 claims 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 2
- 229910000510 noble metal Inorganic materials 0.000 claims 2
- 229910052703 rhodium Inorganic materials 0.000 claims 2
- 239000010948 rhodium Substances 0.000 claims 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 239000007769 metal material Substances 0.000 claims 1
- 239000007800 oxidant agent Substances 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 claims 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 1
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 claims 1
- -1 tungsten nitride Chemical class 0.000 claims 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/887,767 US7094131B2 (en) | 2000-08-30 | 2001-06-21 | Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material |
| US09/888,084 US7112121B2 (en) | 2000-08-30 | 2001-06-21 | Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate |
| US09/888,002 US7160176B2 (en) | 2000-08-30 | 2001-06-21 | Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate |
| PCT/US2002/019495 WO2003001581A2 (en) | 2001-06-21 | 2002-06-20 | Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004531649A JP2004531649A (ja) | 2004-10-14 |
| JP2004531649A5 true JP2004531649A5 (https=) | 2006-01-05 |
| JP4446271B2 JP4446271B2 (ja) | 2010-04-07 |
Family
ID=27420529
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003507879A Pending JP2004531899A (ja) | 2001-06-21 | 2002-06-20 | ミクロ電子基板から導電物質を電気的、機械的および／または化学的に除去する方法および装置 |
| JP2003507878A Expired - Fee Related JP4446271B2 (ja) | 2001-06-21 | 2002-06-20 | ミクロ電子基板から導電物質を電気的、機械的および／または化学的に除去する方法および装置 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003507879A Pending JP2004531899A (ja) | 2001-06-21 | 2002-06-20 | ミクロ電子基板から導電物質を電気的、機械的および／または化学的に除去する方法および装置 |
Country Status (6)
| Country | Link |
|---|---|
| EP (2) | EP1399956A2 (https=) |
| JP (2) | JP2004531899A (https=) |
| KR (2) | KR100663662B1 (https=) |
| CN (1) | CN100356523C (https=) |
| AU (1) | AU2002316303A1 (https=) |
| WO (2) | WO2003001582A2 (https=) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7077721B2 (en) | 2000-02-17 | 2006-07-18 | Applied Materials, Inc. | Pad assembly for electrochemical mechanical processing |
| US6991526B2 (en) | 2002-09-16 | 2006-01-31 | Applied Materials, Inc. | Control of removal profile in electrochemically assisted CMP |
| US7303662B2 (en) | 2000-02-17 | 2007-12-04 | Applied Materials, Inc. | Contacts for electrochemical processing |
| US7059948B2 (en) | 2000-12-22 | 2006-06-13 | Applied Materials | Articles for polishing semiconductor substrates |
| US7374644B2 (en) | 2000-02-17 | 2008-05-20 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
| US6991528B2 (en) | 2000-02-17 | 2006-01-31 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
| US7066800B2 (en) | 2000-02-17 | 2006-06-27 | Applied Materials Inc. | Conductive polishing article for electrochemical mechanical polishing |
| US6979248B2 (en) | 2002-05-07 | 2005-12-27 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
| US7303462B2 (en) | 2000-02-17 | 2007-12-04 | Applied Materials, Inc. | Edge bead removal by an electro polishing process |
| US7029365B2 (en) | 2000-02-17 | 2006-04-18 | Applied Materials Inc. | Pad assembly for electrochemical mechanical processing |
| US6848970B2 (en) | 2002-09-16 | 2005-02-01 | Applied Materials, Inc. | Process control in electrochemically assisted planarization |
| US6962524B2 (en) | 2000-02-17 | 2005-11-08 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
| US7125477B2 (en) | 2000-02-17 | 2006-10-24 | Applied Materials, Inc. | Contacts for electrochemical processing |
| US7344432B2 (en) | 2001-04-24 | 2008-03-18 | Applied Materials, Inc. | Conductive pad with ion exchange membrane for electrochemical mechanical polishing |
| US7137879B2 (en) | 2001-04-24 | 2006-11-21 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
| US6837983B2 (en) * | 2002-01-22 | 2005-01-04 | Applied Materials, Inc. | Endpoint detection for electro chemical mechanical polishing and electropolishing processes |
| US7112270B2 (en) | 2002-09-16 | 2006-09-26 | Applied Materials, Inc. | Algorithm for real-time process control of electro-polishing |
| US7842169B2 (en) | 2003-03-04 | 2010-11-30 | Applied Materials, Inc. | Method and apparatus for local polishing control |
| US7186164B2 (en) | 2003-12-03 | 2007-03-06 | Applied Materials, Inc. | Processing pad assembly with zone control |
| US7390744B2 (en) | 2004-01-29 | 2008-06-24 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| US7084064B2 (en) | 2004-09-14 | 2006-08-01 | Applied Materials, Inc. | Full sequence metal and barrier layer electrochemical mechanical processing |
| US7520968B2 (en) | 2004-10-05 | 2009-04-21 | Applied Materials, Inc. | Conductive pad design modification for better wafer-pad contact |
| US7427340B2 (en) | 2005-04-08 | 2008-09-23 | Applied Materials, Inc. | Conductive pad |
| US7998335B2 (en) | 2005-06-13 | 2011-08-16 | Cabot Microelectronics Corporation | Controlled electrochemical polishing method |
| US7422982B2 (en) | 2006-07-07 | 2008-09-09 | Applied Materials, Inc. | Method and apparatus for electroprocessing a substrate with edge profile control |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01241129A (ja) * | 1988-03-23 | 1989-09-26 | Toshiba Corp | 半導体装置の製造方法 |
| KR960006714B1 (ko) * | 1990-05-28 | 1996-05-22 | 가부시끼가이샤 도시바 | 반도체 장치의 제조 방법 |
| JPH10189909A (ja) * | 1996-12-27 | 1998-07-21 | Texas Instr Japan Ltd | 誘電体キャパシタ及び誘電体メモリ装置と、これらの製造方法 |
| US5911619A (en) * | 1997-03-26 | 1999-06-15 | International Business Machines Corporation | Apparatus for electrochemical mechanical planarization |
| WO1999026758A1 (en) * | 1997-11-25 | 1999-06-03 | John Hopkins University | Electrochemical-control of abrasive polishing and machining rates |
| KR100280107B1 (ko) * | 1998-05-07 | 2001-03-02 | 윤종용 | 트렌치 격리 형성 방법 |
| US6143155A (en) * | 1998-06-11 | 2000-11-07 | Speedfam Ipec Corp. | Method for simultaneous non-contact electrochemical plating and planarizing of semiconductor wafers using a bipiolar electrode assembly |
| US6121152A (en) * | 1998-06-11 | 2000-09-19 | Integrated Process Equipment Corporation | Method and apparatus for planarization of metallized semiconductor wafers using a bipolar electrode assembly |
| JP4513145B2 (ja) * | 1999-09-07 | 2010-07-28 | ソニー株式会社 | 半導体装置の製造方法および研磨方法 |
| US6797623B2 (en) * | 2000-03-09 | 2004-09-28 | Sony Corporation | Methods of producing and polishing semiconductor device and polishing apparatus |
| US6867448B1 (en) * | 2000-08-31 | 2005-03-15 | Micron Technology, Inc. | Electro-mechanically polished structure |
| JP2002093761A (ja) * | 2000-09-19 | 2002-03-29 | Sony Corp | 研磨方法、研磨装置、メッキ方法およびメッキ装置 |
| US6736952B2 (en) * | 2001-02-12 | 2004-05-18 | Speedfam-Ipec Corporation | Method and apparatus for electrochemical planarization of a workpiece |
-
2002
- 2002-06-20 WO PCT/US2002/019496 patent/WO2003001582A2/en not_active Ceased
- 2002-06-20 AU AU2002316303A patent/AU2002316303A1/en not_active Abandoned
- 2002-06-20 EP EP02744464A patent/EP1399956A2/en not_active Withdrawn
- 2002-06-20 KR KR1020037016758A patent/KR100663662B1/ko not_active Expired - Fee Related
- 2002-06-20 KR KR1020037016756A patent/KR100598477B1/ko not_active Expired - Fee Related
- 2002-06-20 EP EP02746596A patent/EP1399957A2/en not_active Withdrawn
- 2002-06-20 JP JP2003507879A patent/JP2004531899A/ja active Pending
- 2002-06-20 JP JP2003507878A patent/JP4446271B2/ja not_active Expired - Fee Related
- 2002-06-20 WO PCT/US2002/019495 patent/WO2003001581A2/en not_active Ceased
- 2002-06-20 CN CNB028122380A patent/CN100356523C/zh not_active Expired - Fee Related
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