CN100356523C - 具有带倒圆拐角孔之导电材料的微电子基板及去除导电材料的相关方法 - Google Patents

具有带倒圆拐角孔之导电材料的微电子基板及去除导电材料的相关方法 Download PDF

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Publication number
CN100356523C
CN100356523C CNB028122380A CN02812238A CN100356523C CN 100356523 C CN100356523 C CN 100356523C CN B028122380 A CNB028122380 A CN B028122380A CN 02812238 A CN02812238 A CN 02812238A CN 100356523 C CN100356523 C CN 100356523C
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CN
China
Prior art keywords
conductive material
corner
electrode
electrolyte
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB028122380A
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English (en)
Chinese (zh)
Other versions
CN1516894A (zh
Inventor
沃恩集·李
斯科特·G·米克尔
斯科特·E·穆尔
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Micron Technology Inc
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Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/887,767 external-priority patent/US7094131B2/en
Priority claimed from US09/888,084 external-priority patent/US7112121B2/en
Priority claimed from US09/888,002 external-priority patent/US7160176B2/en
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of CN1516894A publication Critical patent/CN1516894A/zh
Application granted granted Critical
Publication of CN100356523C publication Critical patent/CN100356523C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/61—Electrolytic etching
    • H10P50/613—Electrolytic etching of Group IV materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/046—Lapping machines or devices; Accessories designed for working plane surfaces using electric current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/16—Polishing
    • C25F3/30—Polishing of semiconducting materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F5/00—Electrolytic stripping of metallic layers or coatings
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/20—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP]
    • H10P52/203—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP] of conductive or resistive materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Element Separation (AREA)
CNB028122380A 2001-06-21 2002-06-20 具有带倒圆拐角孔之导电材料的微电子基板及去除导电材料的相关方法 Expired - Fee Related CN100356523C (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US09/888,002 2001-06-21
US09/887,767 US7094131B2 (en) 2000-08-30 2001-06-21 Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material
US09/888,084 US7112121B2 (en) 2000-08-30 2001-06-21 Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate
US09/888,002 US7160176B2 (en) 2000-08-30 2001-06-21 Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate
US09/888,084 2001-06-21
US09/887,767 2001-06-21

Publications (2)

Publication Number Publication Date
CN1516894A CN1516894A (zh) 2004-07-28
CN100356523C true CN100356523C (zh) 2007-12-19

Family

ID=27420529

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028122380A Expired - Fee Related CN100356523C (zh) 2001-06-21 2002-06-20 具有带倒圆拐角孔之导电材料的微电子基板及去除导电材料的相关方法

Country Status (6)

Country Link
EP (2) EP1399956A2 (https=)
JP (2) JP2004531899A (https=)
KR (2) KR100663662B1 (https=)
CN (1) CN100356523C (https=)
AU (1) AU2002316303A1 (https=)
WO (2) WO2003001582A2 (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7077721B2 (en) 2000-02-17 2006-07-18 Applied Materials, Inc. Pad assembly for electrochemical mechanical processing
US6991526B2 (en) 2002-09-16 2006-01-31 Applied Materials, Inc. Control of removal profile in electrochemically assisted CMP
US7303662B2 (en) 2000-02-17 2007-12-04 Applied Materials, Inc. Contacts for electrochemical processing
US7059948B2 (en) 2000-12-22 2006-06-13 Applied Materials Articles for polishing semiconductor substrates
US7374644B2 (en) 2000-02-17 2008-05-20 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6991528B2 (en) 2000-02-17 2006-01-31 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7066800B2 (en) 2000-02-17 2006-06-27 Applied Materials Inc. Conductive polishing article for electrochemical mechanical polishing
US6979248B2 (en) 2002-05-07 2005-12-27 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7303462B2 (en) 2000-02-17 2007-12-04 Applied Materials, Inc. Edge bead removal by an electro polishing process
US7029365B2 (en) 2000-02-17 2006-04-18 Applied Materials Inc. Pad assembly for electrochemical mechanical processing
US6848970B2 (en) 2002-09-16 2005-02-01 Applied Materials, Inc. Process control in electrochemically assisted planarization
US6962524B2 (en) 2000-02-17 2005-11-08 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7125477B2 (en) 2000-02-17 2006-10-24 Applied Materials, Inc. Contacts for electrochemical processing
US7344432B2 (en) 2001-04-24 2008-03-18 Applied Materials, Inc. Conductive pad with ion exchange membrane for electrochemical mechanical polishing
US7137879B2 (en) 2001-04-24 2006-11-21 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6837983B2 (en) * 2002-01-22 2005-01-04 Applied Materials, Inc. Endpoint detection for electro chemical mechanical polishing and electropolishing processes
US7112270B2 (en) 2002-09-16 2006-09-26 Applied Materials, Inc. Algorithm for real-time process control of electro-polishing
US7842169B2 (en) 2003-03-04 2010-11-30 Applied Materials, Inc. Method and apparatus for local polishing control
US7186164B2 (en) 2003-12-03 2007-03-06 Applied Materials, Inc. Processing pad assembly with zone control
US7390744B2 (en) 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
US7084064B2 (en) 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
US7520968B2 (en) 2004-10-05 2009-04-21 Applied Materials, Inc. Conductive pad design modification for better wafer-pad contact
US7427340B2 (en) 2005-04-08 2008-09-23 Applied Materials, Inc. Conductive pad
US7998335B2 (en) 2005-06-13 2011-08-16 Cabot Microelectronics Corporation Controlled electrochemical polishing method
US7422982B2 (en) 2006-07-07 2008-09-09 Applied Materials, Inc. Method and apparatus for electroprocessing a substrate with edge profile control

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01241129A (ja) * 1988-03-23 1989-09-26 Toshiba Corp 半導体装置の製造方法
US5434447A (en) * 1990-05-28 1995-07-18 Kabushiki Kaisha Toshiba Semiconductor device having a trench for device isolation and method of fabricating the same
US5911619A (en) * 1997-03-26 1999-06-15 International Business Machines Corporation Apparatus for electrochemical mechanical planarization
US6121152A (en) * 1998-06-11 2000-09-19 Integrated Process Equipment Corporation Method and apparatus for planarization of metallized semiconductor wafers using a bipolar electrode assembly
US6171467B1 (en) * 1997-11-25 2001-01-09 The John Hopkins University Electrochemical-control of abrasive polishing and machining rates
US6187651B1 (en) * 1998-05-07 2001-02-13 Samsung Electronics Co., Ltd. Methods of forming trench isolation regions using preferred stress relieving layers and techniques to inhibit the occurrence of voids
JP2001077117A (ja) * 1999-09-07 2001-03-23 Sony Corp 半導体装置の製造方法、研磨装置および研磨方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10189909A (ja) * 1996-12-27 1998-07-21 Texas Instr Japan Ltd 誘電体キャパシタ及び誘電体メモリ装置と、これらの製造方法
US6143155A (en) * 1998-06-11 2000-11-07 Speedfam Ipec Corp. Method for simultaneous non-contact electrochemical plating and planarizing of semiconductor wafers using a bipiolar electrode assembly
US6797623B2 (en) * 2000-03-09 2004-09-28 Sony Corporation Methods of producing and polishing semiconductor device and polishing apparatus
US6867448B1 (en) * 2000-08-31 2005-03-15 Micron Technology, Inc. Electro-mechanically polished structure
JP2002093761A (ja) * 2000-09-19 2002-03-29 Sony Corp 研磨方法、研磨装置、メッキ方法およびメッキ装置
US6736952B2 (en) * 2001-02-12 2004-05-18 Speedfam-Ipec Corporation Method and apparatus for electrochemical planarization of a workpiece

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01241129A (ja) * 1988-03-23 1989-09-26 Toshiba Corp 半導体装置の製造方法
US5434447A (en) * 1990-05-28 1995-07-18 Kabushiki Kaisha Toshiba Semiconductor device having a trench for device isolation and method of fabricating the same
US5911619A (en) * 1997-03-26 1999-06-15 International Business Machines Corporation Apparatus for electrochemical mechanical planarization
US6171467B1 (en) * 1997-11-25 2001-01-09 The John Hopkins University Electrochemical-control of abrasive polishing and machining rates
US6187651B1 (en) * 1998-05-07 2001-02-13 Samsung Electronics Co., Ltd. Methods of forming trench isolation regions using preferred stress relieving layers and techniques to inhibit the occurrence of voids
US6121152A (en) * 1998-06-11 2000-09-19 Integrated Process Equipment Corporation Method and apparatus for planarization of metallized semiconductor wafers using a bipolar electrode assembly
JP2001077117A (ja) * 1999-09-07 2001-03-23 Sony Corp 半導体装置の製造方法、研磨装置および研磨方法

Also Published As

Publication number Publication date
EP1399956A2 (en) 2004-03-24
AU2002316303A1 (en) 2003-01-08
JP2004531899A (ja) 2004-10-14
KR100598477B1 (ko) 2006-07-11
CN1516894A (zh) 2004-07-28
EP1399957A2 (en) 2004-03-24
KR100663662B1 (ko) 2007-01-03
KR20040021616A (ko) 2004-03-10
JP4446271B2 (ja) 2010-04-07
WO2003001582A2 (en) 2003-01-03
WO2003001581A2 (en) 2003-01-03
JP2004531649A (ja) 2004-10-14
WO2003001581A3 (en) 2003-10-30
WO2003001582A3 (en) 2003-10-30
KR20040010773A (ko) 2004-01-31

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Granted publication date: 20071219

Termination date: 20130620