JP2004531899A - ミクロ電子基板から導電物質を電気的、機械的および／または化学的に除去する方法および装置 - Google Patents

ミクロ電子基板から導電物質を電気的、機械的および／または化学的に除去する方法および装置 Download PDF

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Publication number
JP2004531899A
JP2004531899A JP2003507879A JP2003507879A JP2004531899A JP 2004531899 A JP2004531899 A JP 2004531899A JP 2003507879 A JP2003507879 A JP 2003507879A JP 2003507879 A JP2003507879 A JP 2003507879A JP 2004531899 A JP2004531899 A JP 2004531899A
Authority
JP
Japan
Prior art keywords
conductive material
corner
microelectronic substrate
electrodes
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003507879A
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English (en)
Japanese (ja)
Other versions
JP2004531899A5 (https=
Inventor
ウォンチー リー
スコット ジー マイクル
スコット イー ムーア
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/887,767 external-priority patent/US7094131B2/en
Priority claimed from US09/888,084 external-priority patent/US7112121B2/en
Priority claimed from US09/888,002 external-priority patent/US7160176B2/en
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of JP2004531899A publication Critical patent/JP2004531899A/ja
Publication of JP2004531899A5 publication Critical patent/JP2004531899A5/ja
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/046—Lapping machines or devices; Accessories designed for working plane surfaces using electric current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/61—Electrolytic etching
    • H10P50/613—Electrolytic etching of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/16—Polishing
    • C25F3/30—Polishing of semiconducting materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F5/00—Electrolytic stripping of metallic layers or coatings
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/20—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP]
    • H10P52/203—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Element Separation (AREA)
JP2003507879A 2001-06-21 2002-06-20 ミクロ電子基板から導電物質を電気的、機械的および／または化学的に除去する方法および装置 Pending JP2004531899A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US09/887,767 US7094131B2 (en) 2000-08-30 2001-06-21 Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material
US09/888,084 US7112121B2 (en) 2000-08-30 2001-06-21 Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate
US09/888,002 US7160176B2 (en) 2000-08-30 2001-06-21 Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate
PCT/US2002/019496 WO2003001582A2 (en) 2001-06-21 2002-06-20 Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material

Publications (2)

Publication Number Publication Date
JP2004531899A true JP2004531899A (ja) 2004-10-14
JP2004531899A5 JP2004531899A5 (https=) 2008-08-07

Family

ID=27420529

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2003507879A Pending JP2004531899A (ja) 2001-06-21 2002-06-20 ミクロ電子基板から導電物質を電気的、機械的および／または化学的に除去する方法および装置
JP2003507878A Expired - Fee Related JP4446271B2 (ja) 2001-06-21 2002-06-20 ミクロ電子基板から導電物質を電気的、機械的および／または化学的に除去する方法および装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2003507878A Expired - Fee Related JP4446271B2 (ja) 2001-06-21 2002-06-20 ミクロ電子基板から導電物質を電気的、機械的および／または化学的に除去する方法および装置

Country Status (6)

Country Link
EP (2) EP1399956A2 (https=)
JP (2) JP2004531899A (https=)
KR (2) KR100663662B1 (https=)
CN (1) CN100356523C (https=)
AU (1) AU2002316303A1 (https=)
WO (2) WO2003001582A2 (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7077721B2 (en) 2000-02-17 2006-07-18 Applied Materials, Inc. Pad assembly for electrochemical mechanical processing
US6991526B2 (en) 2002-09-16 2006-01-31 Applied Materials, Inc. Control of removal profile in electrochemically assisted CMP
US7303662B2 (en) 2000-02-17 2007-12-04 Applied Materials, Inc. Contacts for electrochemical processing
US7059948B2 (en) 2000-12-22 2006-06-13 Applied Materials Articles for polishing semiconductor substrates
US7374644B2 (en) 2000-02-17 2008-05-20 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6991528B2 (en) 2000-02-17 2006-01-31 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7066800B2 (en) 2000-02-17 2006-06-27 Applied Materials Inc. Conductive polishing article for electrochemical mechanical polishing
US6979248B2 (en) 2002-05-07 2005-12-27 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7303462B2 (en) 2000-02-17 2007-12-04 Applied Materials, Inc. Edge bead removal by an electro polishing process
US7029365B2 (en) 2000-02-17 2006-04-18 Applied Materials Inc. Pad assembly for electrochemical mechanical processing
US6848970B2 (en) 2002-09-16 2005-02-01 Applied Materials, Inc. Process control in electrochemically assisted planarization
US6962524B2 (en) 2000-02-17 2005-11-08 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7125477B2 (en) 2000-02-17 2006-10-24 Applied Materials, Inc. Contacts for electrochemical processing
US7344432B2 (en) 2001-04-24 2008-03-18 Applied Materials, Inc. Conductive pad with ion exchange membrane for electrochemical mechanical polishing
US7137879B2 (en) 2001-04-24 2006-11-21 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6837983B2 (en) * 2002-01-22 2005-01-04 Applied Materials, Inc. Endpoint detection for electro chemical mechanical polishing and electropolishing processes
US7112270B2 (en) 2002-09-16 2006-09-26 Applied Materials, Inc. Algorithm for real-time process control of electro-polishing
US7842169B2 (en) 2003-03-04 2010-11-30 Applied Materials, Inc. Method and apparatus for local polishing control
US7186164B2 (en) 2003-12-03 2007-03-06 Applied Materials, Inc. Processing pad assembly with zone control
US7390744B2 (en) 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
US7084064B2 (en) 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
US7520968B2 (en) 2004-10-05 2009-04-21 Applied Materials, Inc. Conductive pad design modification for better wafer-pad contact
US7427340B2 (en) 2005-04-08 2008-09-23 Applied Materials, Inc. Conductive pad
US7998335B2 (en) 2005-06-13 2011-08-16 Cabot Microelectronics Corporation Controlled electrochemical polishing method
US7422982B2 (en) 2006-07-07 2008-09-09 Applied Materials, Inc. Method and apparatus for electroprocessing a substrate with edge profile control

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01241129A (ja) * 1988-03-23 1989-09-26 Toshiba Corp 半導体装置の製造方法
KR960006714B1 (ko) * 1990-05-28 1996-05-22 가부시끼가이샤 도시바 반도체 장치의 제조 방법
JPH10189909A (ja) * 1996-12-27 1998-07-21 Texas Instr Japan Ltd 誘電体キャパシタ及び誘電体メモリ装置と、これらの製造方法
US5911619A (en) * 1997-03-26 1999-06-15 International Business Machines Corporation Apparatus for electrochemical mechanical planarization
WO1999026758A1 (en) * 1997-11-25 1999-06-03 John Hopkins University Electrochemical-control of abrasive polishing and machining rates
KR100280107B1 (ko) * 1998-05-07 2001-03-02 윤종용 트렌치 격리 형성 방법
US6143155A (en) * 1998-06-11 2000-11-07 Speedfam Ipec Corp. Method for simultaneous non-contact electrochemical plating and planarizing of semiconductor wafers using a bipiolar electrode assembly
US6121152A (en) * 1998-06-11 2000-09-19 Integrated Process Equipment Corporation Method and apparatus for planarization of metallized semiconductor wafers using a bipolar electrode assembly
JP4513145B2 (ja) * 1999-09-07 2010-07-28 ソニー株式会社 半導体装置の製造方法および研磨方法
US6797623B2 (en) * 2000-03-09 2004-09-28 Sony Corporation Methods of producing and polishing semiconductor device and polishing apparatus
US6867448B1 (en) * 2000-08-31 2005-03-15 Micron Technology, Inc. Electro-mechanically polished structure
JP2002093761A (ja) * 2000-09-19 2002-03-29 Sony Corp 研磨方法、研磨装置、メッキ方法およびメッキ装置
US6736952B2 (en) * 2001-02-12 2004-05-18 Speedfam-Ipec Corporation Method and apparatus for electrochemical planarization of a workpiece

Also Published As

Publication number Publication date
EP1399956A2 (en) 2004-03-24
AU2002316303A1 (en) 2003-01-08
KR100598477B1 (ko) 2006-07-11
CN1516894A (zh) 2004-07-28
EP1399957A2 (en) 2004-03-24
KR100663662B1 (ko) 2007-01-03
KR20040021616A (ko) 2004-03-10
JP4446271B2 (ja) 2010-04-07
CN100356523C (zh) 2007-12-19
WO2003001582A2 (en) 2003-01-03
WO2003001581A2 (en) 2003-01-03
JP2004531649A (ja) 2004-10-14
WO2003001581A3 (en) 2003-10-30
WO2003001582A3 (en) 2003-10-30
KR20040010773A (ko) 2004-01-31

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