KR100663662B1 - 마이크로전자 기판으로부터 도전성 물질을 전기적, 기계적 및/또는 화학적으로 제거하기 위한 장치 및 방법 - Google Patents

마이크로전자 기판으로부터 도전성 물질을 전기적, 기계적 및/또는 화학적으로 제거하기 위한 장치 및 방법 Download PDF

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Publication number
KR100663662B1
KR100663662B1 KR1020037016758A KR20037016758A KR100663662B1 KR 100663662 B1 KR100663662 B1 KR 100663662B1 KR 1020037016758 A KR1020037016758 A KR 1020037016758A KR 20037016758 A KR20037016758 A KR 20037016758A KR 100663662 B1 KR100663662 B1 KR 100663662B1
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KR
South Korea
Prior art keywords
conductive material
microelectronic substrate
substrate
electrodes
polishing pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020037016758A
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English (en)
Korean (ko)
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KR20040010773A (ko
Inventor
원체 리
스콧지. 메이클
스콧이. 무어
트렁티. 도안
Original Assignee
마이크론 테크놀로지 인코포레이티드
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Filing date
Publication date
Priority claimed from US09/887,767 external-priority patent/US7094131B2/en
Priority claimed from US09/888,084 external-priority patent/US7112121B2/en
Priority claimed from US09/888,002 external-priority patent/US7160176B2/en
Application filed by 마이크론 테크놀로지 인코포레이티드 filed Critical 마이크론 테크놀로지 인코포레이티드
Publication of KR20040010773A publication Critical patent/KR20040010773A/ko
Application granted granted Critical
Publication of KR100663662B1 publication Critical patent/KR100663662B1/ko
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/046—Lapping machines or devices; Accessories designed for working plane surfaces using electric current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/61—Electrolytic etching
    • H10P50/613—Electrolytic etching of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/16—Polishing
    • C25F3/30—Polishing of semiconducting materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F5/00—Electrolytic stripping of metallic layers or coatings
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/20—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP]
    • H10P52/203—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Element Separation (AREA)
KR1020037016758A 2001-06-21 2002-06-20 마이크로전자 기판으로부터 도전성 물질을 전기적, 기계적 및/또는 화학적으로 제거하기 위한 장치 및 방법 Expired - Fee Related KR100663662B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US09/888,002 2001-06-21
US09/887,767 US7094131B2 (en) 2000-08-30 2001-06-21 Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material
US09/888,084 US7112121B2 (en) 2000-08-30 2001-06-21 Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate
US09/888,002 US7160176B2 (en) 2000-08-30 2001-06-21 Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate
US09/888,084 2001-06-21
US09/887,767 2001-06-21
PCT/US2002/019495 WO2003001581A2 (en) 2001-06-21 2002-06-20 Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate

Publications (2)

Publication Number Publication Date
KR20040010773A KR20040010773A (ko) 2004-01-31
KR100663662B1 true KR100663662B1 (ko) 2007-01-03

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020037016758A Expired - Fee Related KR100663662B1 (ko) 2001-06-21 2002-06-20 마이크로전자 기판으로부터 도전성 물질을 전기적, 기계적 및/또는 화학적으로 제거하기 위한 장치 및 방법
KR1020037016756A Expired - Fee Related KR100598477B1 (ko) 2001-06-21 2002-06-20 무딘 코너형 간극들을 갖는 도전 재료를 구비한 마이크로전자 기판과, 도전 재료를 제거하기 위한 연관된 방법들

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020037016756A Expired - Fee Related KR100598477B1 (ko) 2001-06-21 2002-06-20 무딘 코너형 간극들을 갖는 도전 재료를 구비한 마이크로전자 기판과, 도전 재료를 제거하기 위한 연관된 방법들

Country Status (6)

Country Link
EP (2) EP1399956A2 (https=)
JP (2) JP2004531899A (https=)
KR (2) KR100663662B1 (https=)
CN (1) CN100356523C (https=)
AU (1) AU2002316303A1 (https=)
WO (2) WO2003001582A2 (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7077721B2 (en) 2000-02-17 2006-07-18 Applied Materials, Inc. Pad assembly for electrochemical mechanical processing
US6991526B2 (en) 2002-09-16 2006-01-31 Applied Materials, Inc. Control of removal profile in electrochemically assisted CMP
US7303662B2 (en) 2000-02-17 2007-12-04 Applied Materials, Inc. Contacts for electrochemical processing
US7059948B2 (en) 2000-12-22 2006-06-13 Applied Materials Articles for polishing semiconductor substrates
US7374644B2 (en) 2000-02-17 2008-05-20 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6991528B2 (en) 2000-02-17 2006-01-31 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7066800B2 (en) 2000-02-17 2006-06-27 Applied Materials Inc. Conductive polishing article for electrochemical mechanical polishing
US6979248B2 (en) 2002-05-07 2005-12-27 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7303462B2 (en) 2000-02-17 2007-12-04 Applied Materials, Inc. Edge bead removal by an electro polishing process
US7029365B2 (en) 2000-02-17 2006-04-18 Applied Materials Inc. Pad assembly for electrochemical mechanical processing
US6848970B2 (en) 2002-09-16 2005-02-01 Applied Materials, Inc. Process control in electrochemically assisted planarization
US6962524B2 (en) 2000-02-17 2005-11-08 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7125477B2 (en) 2000-02-17 2006-10-24 Applied Materials, Inc. Contacts for electrochemical processing
US7344432B2 (en) 2001-04-24 2008-03-18 Applied Materials, Inc. Conductive pad with ion exchange membrane for electrochemical mechanical polishing
US7137879B2 (en) 2001-04-24 2006-11-21 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6837983B2 (en) * 2002-01-22 2005-01-04 Applied Materials, Inc. Endpoint detection for electro chemical mechanical polishing and electropolishing processes
US7112270B2 (en) 2002-09-16 2006-09-26 Applied Materials, Inc. Algorithm for real-time process control of electro-polishing
US7842169B2 (en) 2003-03-04 2010-11-30 Applied Materials, Inc. Method and apparatus for local polishing control
US7186164B2 (en) 2003-12-03 2007-03-06 Applied Materials, Inc. Processing pad assembly with zone control
US7390744B2 (en) 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
US7084064B2 (en) 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
US7520968B2 (en) 2004-10-05 2009-04-21 Applied Materials, Inc. Conductive pad design modification for better wafer-pad contact
US7427340B2 (en) 2005-04-08 2008-09-23 Applied Materials, Inc. Conductive pad
US7998335B2 (en) 2005-06-13 2011-08-16 Cabot Microelectronics Corporation Controlled electrochemical polishing method
US7422982B2 (en) 2006-07-07 2008-09-09 Applied Materials, Inc. Method and apparatus for electroprocessing a substrate with edge profile control

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01241129A (ja) * 1988-03-23 1989-09-26 Toshiba Corp 半導体装置の製造方法
KR960006714B1 (ko) * 1990-05-28 1996-05-22 가부시끼가이샤 도시바 반도체 장치의 제조 방법
JPH10189909A (ja) * 1996-12-27 1998-07-21 Texas Instr Japan Ltd 誘電体キャパシタ及び誘電体メモリ装置と、これらの製造方法
US5911619A (en) * 1997-03-26 1999-06-15 International Business Machines Corporation Apparatus for electrochemical mechanical planarization
WO1999026758A1 (en) * 1997-11-25 1999-06-03 John Hopkins University Electrochemical-control of abrasive polishing and machining rates
KR100280107B1 (ko) * 1998-05-07 2001-03-02 윤종용 트렌치 격리 형성 방법
US6143155A (en) * 1998-06-11 2000-11-07 Speedfam Ipec Corp. Method for simultaneous non-contact electrochemical plating and planarizing of semiconductor wafers using a bipiolar electrode assembly
US6121152A (en) * 1998-06-11 2000-09-19 Integrated Process Equipment Corporation Method and apparatus for planarization of metallized semiconductor wafers using a bipolar electrode assembly
JP4513145B2 (ja) * 1999-09-07 2010-07-28 ソニー株式会社 半導体装置の製造方法および研磨方法
US6797623B2 (en) * 2000-03-09 2004-09-28 Sony Corporation Methods of producing and polishing semiconductor device and polishing apparatus
US6867448B1 (en) * 2000-08-31 2005-03-15 Micron Technology, Inc. Electro-mechanically polished structure
JP2002093761A (ja) * 2000-09-19 2002-03-29 Sony Corp 研磨方法、研磨装置、メッキ方法およびメッキ装置
US6736952B2 (en) * 2001-02-12 2004-05-18 Speedfam-Ipec Corporation Method and apparatus for electrochemical planarization of a workpiece

Also Published As

Publication number Publication date
EP1399956A2 (en) 2004-03-24
AU2002316303A1 (en) 2003-01-08
JP2004531899A (ja) 2004-10-14
KR100598477B1 (ko) 2006-07-11
CN1516894A (zh) 2004-07-28
EP1399957A2 (en) 2004-03-24
KR20040021616A (ko) 2004-03-10
JP4446271B2 (ja) 2010-04-07
CN100356523C (zh) 2007-12-19
WO2003001582A2 (en) 2003-01-03
WO2003001581A2 (en) 2003-01-03
JP2004531649A (ja) 2004-10-14
WO2003001581A3 (en) 2003-10-30
WO2003001582A3 (en) 2003-10-30
KR20040010773A (ko) 2004-01-31

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