CN100356523C - Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material - Google Patents
Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material Download PDFInfo
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- CN100356523C CN100356523C CNB028122380A CN02812238A CN100356523C CN 100356523 C CN100356523 C CN 100356523C CN B028122380 A CNB028122380 A CN B028122380A CN 02812238 A CN02812238 A CN 02812238A CN 100356523 C CN100356523 C CN 100356523C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/046—Lapping machines or devices; Accessories designed for working plane surfaces using electric current
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/16—Polishing
- C25F3/30—Polishing of semiconducting materials
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F5/00—Electrolytic stripping of metallic layers or coatings
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
- H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP
Abstract
Methods and apparatuses for detecting characteristics of a microelectronic substrate. A method in accordance with an embodiment of the invention includes positioning the microelectronic substrate proximate to and spaced apart from the first and second spaced apart electrodes, contacting the microelectronic substrate with a polishing surface of a polishing medium, removing conductive material from the microelectronic substrate by moving the substrate and/or the electrodes relative to each other while passing a variable electrical signal through the electrodes and the substrate, and detecting a change in the variable electrical signal or a supplemental electrical signal passing through the microelectronic substrate. The rate at which material is removed from the microelectronic substrate can be changed based at least in part on the change in the electrical signal.
Description
The US 09/9651779 (agent's registration number 108298515US) that is entitled as " method and apparatus of removing electric conducting material from microelectronic substrate " that the application submits to for the part continuation application of following U.S. Patent application: 2000.8.30; 2001.6.21 that submits to is entitled as " electricity consumption, machinery and/or chemical method are removed electric conducting material from microelectronic substrate method and apparatus " US 09/888084 (agent's registration number 108298515US); 2001.6.21 that submits to is entitled as " method and apparatus of removing electric conducting material in mode electricity and/or chemical-mechanical from microelectronic substrate " US 09/888002 (agent's registration number 108298515US).This paper draws these U.S. Patent applications in full and is reference.
Technical field
The present invention relates to remove the method and apparatus of electric conducting material and/or semi-conducting material from microelectronic substrate.
Background technology
In general, microelectronic substrate and board unit comprise the parts that utilize the conducting wire to be connected such as transistor and transistor gate.A kind of conventional method that forms transistor gate (as shown in Figure 1A-1C) is shallow trench isolation method (STI).At first with reference to accompanying drawing 1A, a kind of typical STI method comprises: doped semiconductor substrate 10 is formed up to the material 11 that small part is conducted electricity.Deposited oxide layer 14 on electric conducting material 11, deposition of nitride layer 15 on oxide skin(coating) 14.Then, the mask 16 that the location has mask open 17 on nitride layer 15, and etching semiconductor substrate 10 form hole 60, shown in Figure 1B.Shown in Fig. 1 C, with gate oxide level 61 coating holes 60, and near gate oxide level 61 deposit grid material 62.Therefore, gate oxide 61 can be isolated by electricity with near grid.Then, can remove oxide skin(coating) 14 and nitride layer 15.
A shortcoming with above-mentioned sti structure with reference to Figure 1A-1C is: electric conducting material 11 has sharp corner 63 (shown in Figure 1B and 1C) at the edge in hole 60.Sharp corner 63 can be launched electromagnetic radiation (being generally antenna form), near the work of semiconductor device may disturbing.The method of a routine that addresses this problem is: by semiconductor substrate 10 being exposed to hot environment (as being about 1050 ℃), with the material at oxidation sharp corner 63 places.Remove oxidized material (as using etchant) then, make the turning become circle.Adopting a shortcoming of this processing method is that the degree of crook that utilizes high temperature process to realize is restricted.Another shortcoming is that high temperature may damage the some parts of semiconductor substrate or its composition.Also having a shortcoming is that high temperature process may be expensive, may increase the cost of the product that is formed by semiconductor substrate.
A kind of routine techniques of removing a large amount of electric conducting materials from semiconductor substrate comprises: through intermediate electrolyte conductive layer is added to alternating current, to remove the some parts of conductive layer.According to just like a kind of layout shown in Fig. 2 A, a kind of conventional equipment 60 comprises the first electrode 20a and the second electrode 20b, they and current source 21 couplings.The first electrode 20a directly is fixed on the metal level 21a of semiconductor substrate 10, and moves down the second electrode 20b, contacts with electrolyte until second electrode, and second electrode is immersed in the liquid electrolyte 31 at least in part.The baffle plate 22 protections first electrode 20a does not directly contact with electrolyte 31.Current source 21 process electrode 20a and 20b and 31 pairs of semiconductor substrates 10 of electrolyte add to alternating current, and 11a removes electric conducting material from conductive layer.AC signal has various waveforms, for example by people such as Frankenthal be entitled as " on silicon integrated circuit to the metallization of titanium-platinum-Jin in the galvano-cautery of platinum " disclosed waveform in (Bell laboratory) publication, this paper draw its full text and are reference.
This layout shortcoming is shown in Fig. 2 A, in the zone that the first electrode 20a is housed, can not remove material from conductive layer 11a, because in this zone, baffle plate 22 stops that electrolyte 31 contacts with semiconductor substrate 10.In addition, if the first electrode 20a contacts with electrolyte in this zone, this electrolytic method just may make the first electrode 20a degenerate.Another shortcoming is that this electrolytic process can not be removed material from substrate 10 equably.For example, in conductive layer 11a, may produce some because of residual conductive material form " island ", they directly are not electrically connected with the first electrode 20a.Residual electric conducting material may disturb the formation and/or the work of conducting wire, and, if do not reorientate the first electrode 20a, make its be coupled to these " island " on, so, utilize this electrolytic method to carry out described removal difficulty, or impossible.
A kind of method that solves foregoing problems is at the fixing a plurality of first electrode 20a of substrate periphery, to improve the uniformity of removing electric conducting material.Yet,, still can have described electric conducting material " island " no matter how many first additional electrode 20a has.Another kind method is by the torpescence material, makes electrode 20a and 20b as carbon, and removes baffle plate 22, to increase the contact area of conductive layer 11a and electrolyte 31.Yet, to remove on the substrate 10 aspect the electric conducting material, this electrode that is made of the torpescence material may be so effective not as the electrode of reaction easily, and the electrode that the torpescence material constitutes may also can be left over residual electric conducting material on substrate 10.
Fig. 2 B represents that another solves the method for foregoing problems, and two substrates 10 wherein partly immerse in the container 30 that fills electrolyte 31.The first electrode 20a is fixed on the substrate 10, and the second electrode 20b is fixed on another substrate 10.The advantage of this method is that electrode 20a does not contact electrolyte with 20b.Yet, after finishing electrolytic process, still can have electric conducting material " island ", and it may be very difficult that those aspects that are fixed to substrate 10 from electrode 20a and 20b are removed electric conducting materials.
Summary of the invention
The present invention relates to a kind of microelectronic substrate and a kind of method that forms this microelectronic substrate that comprises electric conducting material, described electric conducting material has the depression at band rounding turning.According to one aspect of the present invention, a kind of method of processing microelectronic substrate is provided, wherein, in turn include the following steps: near the electric conducting material of microelectronic substrate, electrolyte is set, electric conducting material has the first surface in first plane, and have depression in the first surface, by the described depression of second surface rounding in second plane, described electric conducting material also has the turning between first and second surfaces; By locating first and second electrodes, they are communicated with electrolyte flow, and at least one electrode is coupled to voltage source, remove at least a portion electric conducting material from corner; And, little electric current is guided to corner along with removing at least a portion electric conducting material from described corner, to reduce removing electric conducting material speed from described turning.Removing electric conducting material from the turning can be that the speed of wherein removing electric conducting material reduces along with the rounding at turning from qualification (self-limited).
According to another aspect of the present invention, a kind of method of processing microelectronic substrate is provided, wherein, in turn include the following steps: common non electrically conductive material is set near the electric conducting material of microelectronic substrate; Formation is extended by described common electrically non-conductive material and is entered depression in the electric conducting material, and described depression is determined a turning at electric conducting material and the near interface between the common electrically non-conductive material at least; Be removed to the small part electric conducting material from described turning, be exposed under the voltage through electrolyte by making described turning, thus the described turning of rounding at least in part; And, little electric current is guided to corner along with removing at least a portion electric conducting material from described corner, to reduce removing electric conducting material speed from described turning.
The invention still further relates to a kind of microelectronic substrate that forms by a kind of method, described method can comprise: be provided with near the electric conducting material of microelectronic substrate and be generally the electric material of not leading, form depression, described depression is extended and is entered in the electric conducting material by the described non electrically conductive material that is generally.This depression limits a turning at electric conducting material and the near interface that is generally between the non electrically conductive material at least.This method also comprises the steps: to remove electric conducting material from the turning at least in part, so that the described turning of rounding at least in part.
Press another aspect of the present invention, form microelectronic substrate by a kind of method, described method comprises: near the electric conducting material of microelectronic substrate electrolyte is set, electric conducting material has first surface on first plane, and has depression on first plane.Make depression become circle by the second surface on second plane, electric conducting material also has the turning between first surface and second surface.This method also comprise the steps: by with first and second positioning of electrodes at the liquid that is communicated with electrolyte, remove electric conducting material from the turning at least in part, and make the coupling of an electrode and a voltage source at least.
Press another aspect of the present invention, a kind of method of processing microelectronic substrate is provided, wherein, in turn include the following steps: form oxide skin(coating) on the silicon materials mixing up of microelectronic substrate; Nitride layer is set on oxide skin(coating); Etching notched, pass described nitride layer and oxide skin(coating) and enter in the electric conducting material; Near a part of nitride layer and the oxide skin(coating) of removal depression is to expose the turning of described electric conducting material; Near the layout electrolyte turning of described electric conducting material; By locating first and second electrodes, make its near and away from described microelectronic substrate, and be communicated with, and by at least one electrode being coupled to voltage source, the material of partially conductive at least of the described corner of oxidation with electrolyte flow; By oxidized material is exposed to etchant, be removed to the material of small part oxidation; By the described turning of rounding with reduce electric current from least one electrode to the flowing of turning, reduce to remove the speed of electric conducting material from described turning.
Provide a kind of method of processing microelectronic substrate more on the one hand by of the present invention, wherein, in turn include the following steps: form depression in the electric conducting material of microelectronic substrate, the described place, crosspoint that is recessed in hole and electric conducting material plane determines a turning; In described depression, form the microelectronic component of conduction; The turning of determining by described depression by rounding, control is from the electromagnetic emission of described microelectronic component, described rounding turning comprises: voltage source is electrically coupled to described turning, so that through the described electric conducting material of electrolyte oxidation, by oxidized material is exposed to etchant, removes oxidized material from the turning, and remove oxidized material from the turning, simultaneously little electric current is guided to corner, to reduce removing electric conducting material speed from described turning.
Description of drawings
Figure 1A-1C represents that schematically prior art forms the shallow trench isolation method of semiconductor device in semiconductor substrate;
Fig. 2 A-2B is prior art is removed the part signal of electric conducting material equipment from semiconductor substrate a end view;
Fig. 3 is that an embodiment of the present invention is removed the end view of the part signal of electric conducting material equipment from microelectronic substrate, and described equipment has support component and pair of electrodes;
Fig. 4 is that the microelectronic substrate from removing electric conducting material of another embodiment of the present invention is removed electric conducting material and detected the end view of part signal of the equipment of microelectronic substrate characteristic;
Fig. 5 is the part diagrammatic side view that comprises two kinds of electrolytical equipment of yet another embodiment of the invention;
Fig. 6 is near the part schematic plan view of the substrate a plurality of electrodes of further embodiment of this invention;
Fig. 7 is the side cutaway view of electrode and substrate in further embodiment of this invention;
Fig. 8 A is the part schematic isometric that is used for the part of the right support of hold electrodes in further embodiment of this invention;
Fig. 8 B-8C is the electrode stereogram of further embodiment of this invention;
Fig. 9 A and 9B schematically represent circuit and the waveform that the Electrolyzed Processing microelectronic substrate of further embodiment of this invention is used;
Figure 10 A-10F schematically represents the method at the turning in the described hole of rounding in the electric conducting material of microelectronic substrate of an embodiment of the present invention;
Figure 11 is the method at the turning in the described hole of rounding in the electric conducting material of microelectronic substrate of another embodiment of the present invention.
Embodiment
Disclosure of the present invention has been described and has been used for removing the method and apparatus of electric conducting material from making used microelectronic substrate of microelectronic substrate and/or board unit.In the following description and in accompanying drawing 3-11, the detail of specific embodiments more of the present invention is proposed, so that thoroughly understand these embodiment.Yet those of ordinary skill in the art is understood that the present invention also has additional embodiment, does not perhaps have following several details also can implement the present invention.
Fig. 3-9B and relevant discussion generally refer to some embodiments of the invention are removed electric conducting material from microelectronic substrate equipment.Figure 10 A-11 and relevant discussion, being to use such as the equipment of the described type of reference accompanying drawing 3-9B of referring generally to fallen the technology at described turning to electric conducting material.Term electric conducting material used herein includes, but is not limited to such as metals such as copper, platinum and aluminium, and semi-conducting material, as silicon that mixes up and/or polysilicon.The term microelectronic substrate typically refers to and is used for supporting microelectronic component, as the substrate and the board unit of semiconductor device.
Fig. 3 is being used for from the part diagrammatic side view of the equipment 160 of microelectronic substrate or board unit 110 removal electric conducting materials of an embodiment of the present invention.According to an aspect of present embodiment, described equipment 160 comprises the container 130 that holds electrolyte 131, described electrolyte can be liquid or gel state.Term electrolyte used herein and electrolyte typically refer to liquid and the gel that electrolysis is used.Realize that with electrolyte the structure that fluid is communicated with is communicated with electrolyte or gel fluid.
In above-mentioned each embodiment that describes with reference to Fig. 3, all available wire is coupled to current source 121 with electrode 120, in order to provide electric current to electrolyte 131 and conductive layer 111.During work, 121 pairs of electrodes 120 of current source provide alternating current (single-phase or heterogeneous).Electric current pass electrolyte 131 and with 111 electrochemical reactions of conductive layer, remove electric conducting materials (as atom or atomic group) from conductive layer 111.Electrode 120 and/or substrate 110 are moved relative to each other, remove electric conducting material from the selected portion of described conductive layer 111 or from whole conductive layer 111.
Press the aspect of the embodiment of equipment 160 shown in Figure 3, the distance D 1 between electrode 120 and the conductive layer 111 is set at less than the distance D 2 between the first electrode 120a and the second electrode 120b.In addition, the resistance than conductive layer 111 is big usually for the resistance of electrolyte 131.Therefore, alternating current follows from the first electrode 120a, passes electrolyte 131, to conductive layer 111, oppositely pass electrolyte 131, again to the minimum resistance path of the second electrode 120B, do not arrive the second electrode 120b and can directly not pass electrolyte 131 from the first electrode 120a.In addition, can also between the first electrode 120a and the second electrode 120b, locate a kind of dielectric materials (not shown), to disconnect the direct electric connection that does not at first pass conductive layer 111 between each electrode 120.
One of equipment 160 embodiment shown in Figure 3 is characterised in that: electrode 120 is the conductive layer 111 of contact substrate 110 not.The advantage of this layout is, it can eliminate described because of the direct residual electric conducting material that is produced that is electrically connected between electrode 120 and the conductive layer 111 with reference to Fig. 1 and 2 just like above-mentioned.For example, owing to electrode 120 does not contact with conductive layer 111, so described equipment 160 can be eliminated near the residual conductive material in contact zone between electrode and the conductive layer.
Above-mentioned another feature with reference to described equipment 160 embodiment of Fig. 3 is described substrate 110 and/or electrode 120 are moved relative to each other, so that near any point keeper electrode 120 conductive layer 111.The advantage of this layout is, can be near the keeper electrode successively 120 each part of conductive layer, thus can remove electric conducting materials from whole conductive layer 111.In addition, under the electric conducting material situation of the selected portion of only wishing removal conductive layer 111, electrode 120 can be moved to these selected parts, make the remainder of electric conducting material 111 keep motionless.
Fig. 4 is the part diagrammatic side view of another embodiment of the present invention equipment 260.Described equipment 260 comprises support component 240, and the position of support component 240 is suitable for supporting substrate 110.An aspect of present embodiment, support component 240 supports described substrate 110, and its conductive layer 111 faces up.Substrate drive unit 241 removable described support component 240 and substrates 110 are than such described with reference to Figure 3.The first and second electrode 220a, 220b are positioned at the top of described conductive layer 111, and with current source 221 couplings.Support component 224 supports each electrode 220 with respect to substrate 110, and is coupled to electrode drive unit 223, so as in the surface of supporting conductive layer 111 according to being similar to the mode traveling electrode 220 of retouching substantially with reference to Fig. 3.
By an aspect embodiment illustrated in fig. 4, described equipment 260 also comprises the electrolyte container 230 with feed conduit 237, and described feed conduit 237 is located a hole 238 near electrode 220.So, electrolyte 231 can be arranged on partly the interface zone 239 between electrode 230 and the conductive layer 111, and not cover whole conductive layer 111.Electrolyte 231 and flow through at substrate 110 by the electric conducting material of removing from conductive layer 111, and be collected in the electrolyte container 232.Electrolyte 231 flows in the reclaimer 233 with the mixture of electric conducting material, and described reclaimer 233 can be removed most of electric conducting material from electrolyte 231.The filter 234 that is located in reclaimer 233 downstream directions carries out additional filtering for electrolyte 231, and pump 235 makes the electrolyte 231 of recovery turn back to electrolyte container 230 through return pipeline 236.
By on the other hand embodiment illustrated in fig. 4, described equipment 260 can comprise the sensor control unit 252 of sensor cluster 250, wherein said sensor cluster 250 has transducer 251, transducer 251 is located near the conductive layer 111, sensor control unit 252 is coupled to transducer 251, the signal that is produced in order to processes sensor 251.Sensor control unit 252 also can move described transducer 2551 relative to substrate 110.The one side again of present embodiment can make described sensor cluster 250 be coupled to electrode drive unit 223 and/or substrate drive unit 241 by feedback path 253.So described transducer 251 can determine which district of conductive layer 111 needs extra material to remove, and can be movable relative to each other electrode 220 and/or substrate 110, so that electrode 220 is positioned at these zones.In addition, (ratio is when being starved of the repeated removal process) can be movable relative to each other electrode 220 and/or substrate 110 according to predetermined move mode.
Described transducer 251 and sensor control unit 252 can have any suitable structure.Such as according to a kind of embodiment, described transducer 251 can be an optical sensor, and when removing electric conducting material, it detects the removal of described conductive layer 111 by detecting from luminous intensity, wavelength or the phase shift variations of substrate 110 reflections.In addition, other wavelength radiation can be launched and detect to described transducer 251, as the reflection of X-radiation.According to another embodiment, described transducer 251 can be measured the resistance or the capacitance variations of conductive layer 111 between two Chosen Points.By the one side again of this embodiment, can finish the function (and removal function of above-mentioned electric conducting material) of described transducer 251 by one or two electrode 220, so just no longer need independent transducer 251.According to another kind of embodiment, described transducer 251 can detect when removing conductive layer 111 from the obtained voltage of current source 221 and/or the variation of electric current.
Above-mentioned with reference to Fig. 4 among described arbitrary embodiment, can be away from the described transducer 251 in electrolyte 231 location, this is because electrolyte 231 concentrates in the interface zone 239 between electrode 220 and the conductive layer 111.Thereby, can make transducer 251 determine that the accuracy of electrolytic process process is improved, because the work of electrolyte 231 unlikely disturb sensors 251.For example, when transducer 251 was a kind of optical sensor, electrolyte 231 unlikely made the radiometric distortion from substrate 110 surfaces, because the position of transducer 251 is away from boundary zone 239.
Above-mentioned another feature with reference to described equipment 260 embodiment of Fig. 4 is that perhaps the electrolyte of utilization recovery perhaps utilizes new electrolyte, and the electrolyte 231 that offers described interface zone 239 is full of continuously.The advantage of this feature is, the electrochemical reaction between electrode 220 and the conductive layer 111 can be maintained very high and consistent level.
Fig. 5 is the part schematic side view of equipment 360.Equipment 360 is guided alternating current into substrate 110 through the first electrolyte 331a and the second electrolyte 331b.The one side of present embodiment is located at the first electrolyte 331a in two the first electrolyte container 330a, and the second electrolyte 331b is located among the second electrolyte container 330b.The described first electrolyte container 330a partly immerses among the second electrolyte 331b.Equipment 360 also can comprise electrode 320, the first electrode 320a shown in the figure and the second electrode 320b, and each electrode all is coupled to current source 321, and each electrode all is contained in in the middle of two the first electrolyte container 330a one.In addition, can make one of described electrode 320 ground connection.The material of electrode 320 can be for such as silver, platinum, copper and/or other material, the first electrolyte 331a can comprise sodium chloride, potassium chloride, copper sulfide and/or with other the compatible material of material that forms electrode 320.
Press an aspect of present embodiment, the first electrolyte container 330a comprises a choke valve 322, such as Teflon
TMSuch as agglomerated materials such as sintered glass, quartz or sapphires, the perhaps permeable barrier film made of other suitable porous material, described appropriate materials allows ion to pass back and forth between the first electrolyte container 330a and the second electrolyte container 330b, but do not allow the second electrolyte 330b inwardly towards electrode 320 by the mode of salt bridge (as be substantially similar to).In addition, can be enough to guide the first electrolyte 331a outwards by under the pressure and rate conditions of choke valve 322, provide the first electrolyte 331a from first electrolyte source 339 to electrode containers 330a, and do not allow the first electrolyte 330a or the second electrolyte 330b to return by choke valve 322.No matter in which kind of embodiment, pass flowing of choke valve 322, make the second electrolyte 331b keep electric coupling with electrode 320 by the first electrolyte 331a.
Press an aspect of present embodiment, described equipment 360 can also comprise support component 340, and support component 340 supporting substrates 110 make conductive layer 111 towards electrode 320.For example, described support component 340 can be positioned among the second electrolyte container 330b.Present embodiment utilizes one or more driver element (not shown) that support component 340 and/or electrode 320 are moved relative to each other on the other hand.
An above-mentioned feature with reference to described equipment 360 embodiment of Fig. 5 is, can select the first electrolyte 331a, and it is compatible making itself and electrode 320.Compare with conventional electrolysis matter, the advantage of this feature is that the first electrolyte 331a unlikely makes electrode 320 quality descend.On the contrary, the selection of the second electrolyte 331b may be irrelevant to the impact effect of electrode 320 with it, and this is by the cause of choke valve 322 with electrode 320 chemical isolation because of the second electrolyte 331b.Therefore, the second electrolyte 331b can comprise hydrochloric acid or other reagent, and they can carry out the corrosivity reaction with the conductive layer of substrate 110.
Fig. 6 is the plan view from above that is positioned at the microelectronic substrate 110 of a plurality of electrodes below, and described each electrode has shape and the structure of several embodiment of the present invention.For the purpose of illustrating, several dissimilar electrodes shown in the figure, they all be positioned at same microelectronic substrate 110 near.Yet, in fact, can only locate the electrode of same type with respect to single microelectronic substrate 110.
In one embodiment, electrode 720a and 720b grouping can be formed an electrode pair 770a, each electrode 720a wherein and 720b are coupled to the relative terminal (Fig. 3) of a current source 121.The shape of electrode 770a and 770b can be elongated or bar shaped, and they can be arranged to make them to extend parallel to each other along the diametric(al) of substrate 110.Can select the spacing between the adjacent electrode of electrode pair 370a, so that it is can enter the electric current guiding in the substrate 110, as above described like that with reference to Fig. 3.
In an alternate embodiment, electrode 720c and 720d grouping can be formed an electrode pair 770b, each electrode 720c wherein and 720d are wedge shape or " splitting " shape, inwardly splay gradually towards microelectronic substrate 110 centers.In another embodiment, fillet shape electrode 720e and 720f grouping can be formed an electrode pair 770c, wherein each electrode 720e and 720f extend towards the periphery 112 of microelectronic substrate 110 radially outwardly from the center 113 of microelectronic substrate 110.
In another embodiment, an independent electrode 720g can extend on about 1/2 area of microelectronic substrate 110, and can have semicircle platform shape.Electrode 720g can form one group with another electrode (not shown), and the shape of another electrode can make two electrodes be coupled to microelectronic substrate according to the above any way of describing with reference to Fig. 3-5 corresponding to the mirror image of electrode 720g.
Fig. 7 is the local side-looking generalized section of part substrate 110, and wherein substrate 110 is positioned at above-mentioned below with reference to the described electrode 720c of Fig. 6.Press an aspect of present embodiment, described electrode 720c have upper surface 771 and with these upper surface 771 opposing lower surface 772; Described lower surface 772 is in the face of the conductive layer 111 of substrate 110.Press an aspect of present embodiment, described lower surface 772 is splayed downwards towards the periphery 112 of substrate 110 from center 113 beginnings of substrate 110, makes electrode 720c wedgewise section.The another kind of selection, electrode 720c can be slab structure, and lower surface 772 is located as shown in Figure 7, and upper surface 771 is parallel to lower surface 772.The feature of every kind of embodiment is that the electric coupling between electrode 720c and the substrate 110 may be stronger at the center 113 of substrate 110 at periphery 112 ratios of substrate 110.When the periphery 112 of substrate 110 moved with center 113 faster rate than substrate 110 with respect to electrode 720c, for example, when substrate 110 rotated around its center 113, this feature was more favourable.Therefore, the shape of electrode 720c will be considered relatively moving between electrode and the substrate 110.
By some other embodiment, electrode 720c can have other shape.For example, lower surface 772 can have crooked profile, rather than straight profile.In addition, above-mentioned can have inclination or crooked lower surface with reference to the described any electrode of Fig. 6 (perhaps having other electrode except that other shape the shape as shown in Figure 6).In another embodiment, the shape of described electrode can be taken into account relatively moving between electrode and the substrate 110.
Fig. 8 A is the partial schematic diagram that supports the used electrode supporting 473 of a plurality of electrodes of another embodiment of the present invention.Aspect of present embodiment, electrode supporting 473 can comprise a plurality of electrode holes 474, each electrode hole or hold the first electrode 420a, or hold the second electrode 420b.The described first electrode 420a is by the hole 474 and the first lead-in wire 428a coupling, and the second electrode 420b and the second lead-in wire 428b are coupled.Described two kinds of lead-in wire 428a and 428b are coupled to current source 421.Therefore, each that is made of the first electrode 420a and the second electrode 420b limits above-mentioned a part of circuit of realizing with reference to the described substrate 110 of Fig. 3-5 and electrolyte (one or more) to 470.
Press an aspect of present embodiment, staggered in the position of the described first lead-in wire 428a and the second lead-in wire 428b, to reduce short circuit and/or capacity coupled possibility between two lead-in wires.Press present embodiment on the other hand, the structure of described electrode supporting 473 can be similar to above-mentioned structure with reference to described any one electrode supporting of Fig. 1-7.Above-mentioned any one with reference in described each electrode of Fig. 6 (as 320a, 320c, 320e or 320g), can replace by electrode supporting 473, described electrode supporting 473 has identical overall shape, comprise a plurality of holes 474, and each hole 474 all holds one in the middle of the first electrode 420a and the 420b.
Press another aspect of present embodiment, electrode pair 470 shown in Fig. 8 A can be arranged to, make its with electrode 420a, 420b and microelectronic substrate 110 between degree of closeness corresponding (Fig. 7), and/or the electrode pair 470 shown in Fig. 8 A can be arranged to, make its with electrode 420a, 420b and microelectronic substrate 110 between the speed that relatively moves corresponding.For example, can to a great extent electrode pair 470 be concentrated on the periphery 112 of substrate 110, perhaps concentrate on other the higher regional (see figure 7) of relative velocity between electrode pair 470 and the substrate 110 to a great extent.So the intensity of raising electrode pair 470 can improve Faradaic current, to compensate higher relative velocity.In addition, in the close zone (as the periphery 112 of substrate 110) of conductive layer 111 (see figure 7)s of some each electrodes, the first electrode 420a of each electrode pair 470 and the second electrode 420b each other may be comparatively approaching, and this is because will reduce the possibility of direct electric coupling between the first electrode 420a and the second electrode 420b near conductive layer 111.Aspect another of present embodiment, can change amplitude, frequency and/or the waveform that offers different electrode pairs 470 according to some factors, described factor is such as the relative velocity between the distance, electrode pair 470 and the microelectronic substrate 110 that have between electrode pair 470 and the microelectronic substrate 110.
Fig. 8 B and 8C represent the electrode 820 (being expressed as the first electrode 820a and the second electrode 820b among the figure) of arranged concentric in further embodiment of this invention.In a kind of embodiment shown in Fig. 8 B, the first electrode 820a can be concentrically positioned in the second electrode 820b around, between the first electrode 820a and the second electrode 820b, dielectric substance 829 is set.The first electrode 820a can limit 360 a ° complete arc around the second electrode 820b, perhaps alternatively, the first electrode 820a can limit one less than 360 ° arc.
By another kind of embodiment, shown in Fig. 8 C, the first electrode 820a can be arranged between two the second electrode 820b with one heart, between two adjacent electrodes 820, dielectric substance 829 is set.Press an aspect of present embodiment, can provide electric current to each second electrode 820b, and not have phase shift.Alternatively, offering the electric current of one second electrode 820b can be with respect to the electric current phase shift that offers another second electrode 820b.At present embodiment on the other hand, offer the electric current of each second electrode 820b, the characteristic except phase place can be different such as amplitude.
An above-mentioned feature with reference to Fig. 8 B and the described electrode 820 of 8C is that the first electrode 820a can shield the interference that second electrode (one or more) 820b is not subjected to other current source.For example, can make the first electrode 820a ground connection, to shield the second electrode 820b.The advantage of this layout is, can control the electric current (Fig. 7) that adds to substrate 110 through electrode 820 more exactly.
Fig. 9 A is above-mentioned schematic circuit diagram with reference to the more described parts of Fig. 3-8C.Expectation is shown shown in Fig. 9 A, with lead 528a and 528b current source 521 is coupled to the first electrode 520a and the second electrode 520b respectively.Electrode 520a and 520b are coupled to microelectronic substrate 110 by electrolyte 531, and arrangement is wherein represented with the capacitor and the resistor of two groups of parallel connections.The 3rd capacitor and resistor schematically illustrate microelectronic substrate 110 with respect to ground or other current potential be " float ".
Aspect of Fig. 9 A illustrated embodiment, current source 521 can be coupled to amplitude modulator 522, and the signal that amplitude modulator 522 modulation are produced by current source 521 is shown in Fig. 9 B.Therefore, current source 521 can produce high frequency waves 904, and amplitude modulator 522 can monitor the low frequency wave 902 on high frequency waves 904.For example, high frequency waves 904 can comprise a series of positive or negative voltage spike, and these voltage spike are comprised in the square wave envelope of being determined by low frequency wave 902.The rise time slope of high frequency waves 904 each spiking is all quite precipitous, so that transmit electric charge by dielectric to electrolyte, slope fall time of this high frequency waves 904 each spiking all compares gently.Fall time, slope can be determined a straight line represented just like high frequency waves 904; Perhaps curve represented just like high frequency waves 904a.In some other embodiment, high frequency waves 904 and low frequency wave 902 can be other shape, depend on such as this: the characteristic of near dielectric substance the electrode 420 and electrolytical characteristic, substrate 110, and/or remove the targeted rate of electric conducting materials from substrate 10.
The advantage of this embodiment is, high-frequency signal can send needed electric energy to microelectronic substrate 110 from electrode 520a and 520b, and the low frequency supervisory signal can promote the electrochemical reaction between the conductive layer 111 of electrolyte 531 and microelectronic substrate 110 more effectively simultaneously.Therefore, above-mentioned with reference to the described any embodiment of Fig. 3-8C, except that comprising current source, also can comprise an amplitude modulator.
Figure 10 A-10F represents that in the mode of signal the another kind of embodiment of the present invention forms the method for various parts in microelectronic substrate, wherein use above-mentioned with reference to the described any equipment of Fig. 3-8C.Press an aspect of present embodiment, described method comprises formation shallow trench isolation (STI) parts, and in a further embodiment, described method comprises the parts that form other type.In any one of these embodiment, described method comprises the turning of rounding electric conducting material, just like following in more detail as described in.
Figure 10 A represents to have the part of the microelectronic substrate 1010 on surface 1013, and it has conduction, partially conductive and/or semi-conductive material 1011 (following general designation electric conducting material 1011).For example according to a kind of embodiment, described electric conducting material 1011 can comprise the silicon of doped with boron or phosphorus.In other embodiment, electric conducting material 1011 can comprise other conduction or semi-conductive material.In any of these embodiment, described method also comprises a plurality of holes that form such as in described electric conducting material 1011, in order to support dielectric material or other microelectronic component.Aspect of present embodiment, described method can be included in oxide skin(coating) 1014 is set on the electric conducting material 1011, and nitride layer 1015 is set on oxide skin(coating) 1014 then.Locate the mask 1016 with opening 1017 near nitride layer 1015, these openings 1017 are corresponding with desirable microelectronic component position, and microelectronic substrate 1010 is exposed to etchant.
Shown in Figure 10 B, etchant can be removed the material that is positioned at below the opening 1017, extends through hole 1060 or other depression of the upper surface 1065 of nitride layer 1015, oxide skin(coating) 1014 and electric conducting material 1011 with formation.Therefore, hole 1060 can comprise the sidewall 1064 that is approximately perpendicular to upper surface 1065, and the turning 1063 that is located at place, joint portion between sidewall 1064 and the upper surface 1065.
Referring now to Figure 10 C, before rounding turning 1063, can nitride etching layer 1015 and oxide skin(coating) 1014, make their break away from turning 1063.For example, press an aspect of present embodiment, a kind of liquid etchant contains 500 parts the water of having an appointment, about 1 part hydrochloric acid and about 1 part hydrochloric acid, this etchant can be by roughly the same speed deep etch nitride layer 1015 and oxide skin(coating) 1014, exposes near the upper surface 1065 of the electric conducting material 1011 the turning 1063.Press present embodiment on the other hand, can under about 60 ℃ of temperature, finish etching process.By a kind of alternative embodiment, as following describe in detail with reference to Figure 11, can save deep etch nitride layer 1015 and oxide skin(coating) 1014 these steps from the turning 1063.
Shown in Figure 10 D, the turning 1063 of can rounding being exposed forms the turning 1063a (shown in Figure 10 D dotted line) of rounding.For example, press an aspect of present embodiment, electrolyte 1031 can be placed in turning 1063 near, and it is communicated with the first electrode 1020a and the second electrode 1020b (being referred to as electrode 1020) fluid.Press present embodiment on the other hand, can make electrode 1020 and microelectronic substrate 1010 spaced apart, spacing from about 1mm to about 2mm.In other embodiment, this spacing can be other numerical value.At least one electrode 1020 can be coupled to a voltage source, and as alternate current-changing source, the mode of coupling is similar to above-mentioned with reference to the described mode of Fig. 3-9B substantially.Therefore, electric current flows through electrolyte 1031 at the beginning from electrode 1020, arrives turning 1063, thus electric conducting material that can 1063 places, oxidation turning.Electric current can and oppositely pass electrolyte 1031 by electric conducting material 1011, arrives another electrode 1020, finishes a circuit.By removing the oxidation material at 1063 places, turning, form the turning 1063a of rounding with the chemical interaction of electrolyte.
Press an aspect of present embodiment, can be about 1-500mA/cm by speed
2(be about 50mA/cm in certain embodiments
2), about 60 hertz of frequency, voltage is about the condition of 15 volts (Vrms-root-mean-square values) to be introduced electric current in the electrolyte 1031.In addition, the described electric current of going back has other characteristic.In any of these embodiment, the component of electrolyte 1031 can be identical with the component of the used etchant of deep etch oxide skin(coating) 1014 and nitride layer 1015.Press present embodiment on the other hand, can select the component of electrolyte 1031, to reduce or eliminate in the hole etching at 1060 sidewall 1064 places.For example, when electric conducting material 1011 comprised silicon, the hydrochloric acid in the electrolyte 1031 can reduce the pH value of liquid, thereby reduced the etching at sidewall 1064 places at least.Thereby electrolyte 1031 can (a) have enough conductivity, thereby can be with current lead-through to turning 106, so that the electric conducting material at 1063 places, oxidation turning; (b) enough reactivities are arranged, thereby can be from the turning 1063 remove the materials of deoxidation; (c) reactivity is not excessive, otherwise can be from the hole 1060 sidewall 1064 unoxidized material is also removed.In addition, can add ethane ethylene glycol to electrolyte 1031, to reduce the etch-rate of sidewall silicon 1064.In a further embodiment, can in electrolyte 1031, add other chemical substance, remove the speed of material, make it possible to 1063 removal materials simultaneously, as previously discussed from the turning to be controlled at sidewall 1064 places.
Figure 10 E is illustrated in turning 1063 (Figure 10 D) rounding, thereby forms after the rounding turning 1063a, just like the part microelectronic substrate 1010 shown in Figure 10 D.Press an aspect of present embodiment, the shape of cross section of turning 1063a can be determined a circular substantially arc.In a further embodiment, the turning 1063a of rounding can have other shape.In any of these embodiment, compare with the sharp corner 1063 shown in Figure 10 D, the turning 1063a of rounding is circular, and is not too sharp-pointed.
Figure 10 F represents to be located at the gate oxide level 1066 in the hole 1060, in order to coating sidewall 1064.Then, can common grid material 1067 be set by 1060 inside on described gate oxide 1066, to form grid in the hole.
An above-mentioned feature with reference to the described method embodiment of Figure 10 A-10F is, can make on sidewall 1064 and the electric conducting material 1011 that place, junction surface between the surface 1065 forms to be initially sharp-pointed turning 1063 rounded, and the temperature of the microelectronic substrate 1110 that need not to raise obviously surpasses room temperature.Correspondingly, at microelectronic substrate 1010 duration of works, the unlikely emission of turning 1063a of rounding may be disturbed the electromagnetic signal of microelectronic substrate 1010 other parts.In addition, because the time less that stops in hot environment, so the manufacturing of this microelectronic substrate is not really expensive, and more reliable.
Above-mentioned another feature with reference to the described method embodiment of Figure 10 A-10F is that this method is from limiting.For example, along with electric conducting material 1011 oxidations at 1063 places, turning and erode, turning 1063 becomes rounding, and with comparing with other conductive surface that electrode 1020 fluids are communicated with, attracts electric current unlikely faster.Therefore, this method need closely monitor unlike the method for other removal material.
Figure 11 is the partial schematic diagram that another embodiment of the present invention is used for the conduction turning method of rounding microelectronic substrate 1110.Press an aspect of present embodiment, microelectronic substrate 1110 can comprise electric conducting material 1111, oxide skin(coating) 1114 and nitride layer 1115, and their arrangement is substantially with above-mentioned identical with reference to the described mode of Figure 10 D.Pass nitride layer 1115 and oxide skin(coating) 1114, enter electric conducting material 1111 and etch-hole 1160, etching mode is also substantially to above-mentioned similar with reference to the described mode of Figure 10 B.Can there be sidewall 1164 in hole 1160, and sidewall 1164 forms sharp-pointed turning 1163, and hole 1160 is crossing with the upper surface 1165 of electric conducting material 1111 here.
Press present embodiment on the other hand, can make the first electrode 1120a and the second electrode 1120b be arranged in be located at microelectronic substrate 1110 on the fluid that is communicated with of electrolyte 1131, thereby sharp-pointed turning when can rounding initial, and need not the deep etch oxide skin(coating) 1114 and the nitride layer 1115 at etching turning 1163 in advance.Therefore, oxide skin(coating) 1114 and nitride layer 1115 can be suspended on the turning of rounding at first, be this situation up to get on except that oxide skin(coating) 1114 and nitride layer 1115 from microelectronic substrate 1110 before at least.The advantage of this method is, can save above-mentioned with reference to the described such step of Figure 10 C.
From the above as can be seen, though described specific embodiment of the present invention in order to describe here, under the condition that does not break away from design of the present invention and scope, can make various remodeling.For example, can use said method formation other parts except that the STI parts.Correspondingly, have only appended each claim to be limited the present invention.
Claims (51)
1. method of processing microelectronic substrate wherein, in turn includes the following steps:
Near the electric conducting material of microelectronic substrate, electrolyte is set, electric conducting material has the first surface in first plane, and have depression in the first surface, by the described depression of second surface rounding in second plane, described electric conducting material also has the turning between first and second surfaces;
By locating first and second electrodes, they are communicated with electrolyte flow, and at least one electrode is coupled to voltage source, remove at least a portion electric conducting material from corner; And
Along with removing at least a portion electric conducting material, little electric current is guided to corner, to reduce to remove the speed of electric conducting material from described turning from described corner.
2. the method for claim 1, wherein, described microelectronic substrate has the surface on plane, described depression is extended perpendicular to described plane surface, and remove at least a portion electric conducting material and comprise two electrodes in location, make it face described plane surface, make at least one electrode be coupled to voltage source simultaneously, and between described plane surface and electrode, electrolyte is set.
3. the method for claim 1, wherein also comprise the steps:
From an electrode emission signal of telecommunication that separates with described microelectronic substrate;
Corner at described electric conducting material receives the described signal of telecommunication;
Make the described signal of telecommunication by described electric conducting material, thus at least a portion electric conducting material of the described corner of oxidation; With
Make the oxidized part of described electric conducting material be exposed to chemical etchant.
4. the method for claim 1, wherein, the first surface of described electric conducting material is positioned near the electrically non-conductive material, described electrically non-conductive material is positioned between first surface and at least one electrode, and removes the electric conducting material that at least a portion electric conducting material comprises that removal engages with described electrically non-conductive material from corner.
5. the method for claim 1, wherein also comprise the steps:
The electrically non-conductive material layer is set on described electric conducting material;
Before being removed to the small part electric conducting material, be removed to small part electrically non-conductive material layer, to expose the turning of described electric conducting material from corner.
6. the method for claim 1, wherein also comprise the steps:
Oxide skin(coating) is set on electric conducting material;
Nitride layer is set on oxide skin(coating);
Before removing electric conducting material, be removed to small part nitride layer and partial oxide layer at least, to expose described electric conducting material turning from the turning.
7. the method for claim 1, wherein removing described electric conducting material comprises: make electric current by the partially conductive material and make this part be exposed to etchant, thereby be oxidizing to the small part electric conducting material.
8. the method for claim 1, wherein also comprise step: select electrolyte, it is at least a that it is comprised in water and hydrochloric acid and the hydrochloric acid.
9. the method for claim 1, wherein being removed to the small part electric conducting material comprises: make electric current by 1-500mA/cm
2Speed enter electric conducting material.
10. the method for claim 1, wherein being removed to the small part electric conducting material comprises: select voltage source, provide 15 volts of rms voltages to described electric conducting material.
11. the method for claim 1, wherein being removed to the small part electric conducting material comprises: select electric current, make it locate to change at 60 hertz by described electric conducting material.
12. the method for claim 1, wherein being removed to the small part electric conducting material comprises: selecting the electric current by described electric conducting material is alternating current.
13. the method for claim 1, wherein also comprise step: select electrolyte, make it comprise water, hydrochloric acid and hydrochloric acid, ratio is 500: 1: 1.
14. the method for claim 1, wherein also comprise step: select electric conducting material, make it comprise doped silicon.
15. the method for claim 1, wherein also comprise step: one of select in described first and second electrodes at least, make it comprise in platinum, tantalum and the graphite one of at least.
16. the method for claim 1, wherein also further comprise the steps: to determine the position of at least one electrode in described first and second electrodes, make the described microelectronic substrate 1-2mm of its distance.
17. the method for claim 1, wherein also comprise step: after electric conducting material is removed by corner, on the wall of described depression, insulating barrier is set.
18. the method for claim 1, wherein also comprise step: in described depression, dielectric substance is set.
19. claim as 1 method, wherein, is removed to the small part electric conducting material and comprises:, reduce to remove the speed of electric conducting material from the turning by the described turning of rounding.
20. a method of processing microelectronic substrate wherein, in turn includes the following steps:
Near the electric conducting material of microelectronic substrate, electrically non-conductive material is set;
Formation is extended by described electrically non-conductive material and is entered depression in the electric conducting material, and the described depression near interface between electric conducting material and electrically non-conductive material is at least determined a turning;
Be removed to the small part electric conducting material from described turning, be exposed under the voltage through electrolyte by making described turning, thus the described turning of rounding at least in part; And
Along with removing at least a portion electric conducting material, little electric current is guided to corner, to reduce to remove the speed of electric conducting material from described turning from described corner.
21. method as claimed in claim 20, wherein, being removed to the small part electric conducting material comprises: locate first electrode and second electrode, make its near and away from microelectronic substrate, at least one electrode is coupled to voltage source, make electric current flow to the turning,, and make the material of described corner oxidation be exposed to etchant with the electric conducting material of the described corner of oxidation from least one electrode.
22. method as claimed in claim 20 wherein, also comprises the steps:
From an electrode emission signal of telecommunication that leaves with described microelectronic substrate;
Corner at described electric conducting material receives the described signal of telecommunication;
Make electric current pass through described electric conducting material, thus the material of partially conductive at least of the described corner of oxidation;
Make the oxidized part of described electric conducting material be exposed to chemical etchant.
23. method as claimed in claim 20 wherein, is removed to the small part electric conducting material from corner and comprises: remove the electric conducting material that couples with electrically non-conductive material.
24. method as claimed in claim 20 wherein, also comprises step: before being removed to the small part electric conducting material, be removed to the small part electrically non-conductive material, to expose the turning of described electric conducting material from described corner.
25. method as claimed in claim 20 wherein, also comprises the steps:
Oxide skin(coating) is set on electric conducting material;
Nitride layer is set on oxide skin(coating);
Before being removed to the small part electric conducting material, be removed to small part nitride layer and partial oxide layer at least, to expose the turning of described electric conducting material from described corner.
26. method as claimed in claim 20 wherein, is removed electric conducting material and is comprised: make electric current flow through partially conductive material at least, and make this part be exposed to etchant, thus oxidation at least a portion electric conducting material.
27. method as claimed in claim 20 wherein, is removed to the small part electric conducting material and comprises: make electric current flow into electric conducting material by 100 milliamperes speed.
28. method as claimed in claim 20 wherein, is removed to the small part electric conducting material and comprises: makes electric current pass through electric conducting material under 15 volts of root-mean-square value voltages.
29. method as claimed in claim 20 wherein, is removed to the small part electric conducting material and comprises: under 60 hertz of frequencies, make electric current pass through electric conducting material.
30. method as claimed in claim 20 wherein, is removed to the small part electric conducting material and comprises: selecting the electric current by described electric conducting material is alternating current.
31. method as claimed in claim 20 wherein, also comprises step: select electric conducting material, make it comprise the silicon of doping.
32. method as claimed in claim 20, wherein, being removed to the small part electric conducting material comprises: locate first and second electrodes, it is communicated with described turning fluid, at least one electrode is coupled to voltage source, and select at least one electrode in first and second electrodes, make it comprise at least a in platinum, tantalum and the graphite.
33. method as claimed in claim 20 wherein, also comprises step: after removing described electric conducting material from the turning, on the wall in hole insulating barrier is set.
34. method as claimed in claim 20 wherein, also comprises step: form transistor gate in described depression.
35. method as claimed in claim 20, wherein, described microelectronic substrate has the surface on a plane, described depression is extended perpendicular to described plane surface, and being removed to the small part electric conducting material comprises: locate two electrodes, make it towards described plane surface, at least one electrode is coupled to voltage source, between described plane surface and electrode, electrolyte is set.
36. method as claimed in claim 20 wherein, also comprises step:, reduce to remove the speed of electric conducting material by the described turning of rounding.
37. a method of processing microelectronic substrate wherein, in turn includes the following steps:
On the electric conducting material of microelectronic substrate, form oxide skin(coating);
Nitride layer is set on oxide skin(coating);
Etching notched, pass described nitride layer and oxide skin(coating) and enter in the electric conducting material;
Near a part of nitride layer and the oxide skin(coating) of removal depression is to expose the turning of described electric conducting material;
Near the layout electrolyte turning of described electric conducting material;
By locating first and second electrodes, make its near and away from described microelectronic substrate, and be communicated with, and by at least one electrode being coupled to voltage source, the material of partially conductive at least of the described corner of oxidation with electrolyte flow;
By oxidized material is exposed to etchant, be removed to the material of small part oxidation;
By the described turning of rounding with reduce electric current from least one electrode to the flowing of turning, reduce to remove the speed of electric conducting material from described turning.
38. method as claimed in claim 37, wherein, part nitride layer and the oxide skin(coating) removed near the described depression comprise: remove the material of nitride layer with first rate, and remove the material of oxide skin(coating) with second speed, described first rate equals second speed.
39. method as claimed in claim 37 wherein, also comprises step: after being removed to the material of small part oxidation, remove nitride layer and oxide skin(coating) with etchant.
40. method as claimed in claim 37, wherein, remove described depression neighbouring part nitride layer and oxide skin(coating) and comprise: near described nitride layer and oxide skin(coating) etchant is set, the chemical constituent of etchant is identical with the chemical constituent of electrolyte.
41. a method of processing microelectronic substrate wherein, in turn includes the following steps:
Form depression in the electric conducting material of microelectronic substrate, the described place, crosspoint that is recessed in hole and electric conducting material plane determines a turning;
In described depression, form the microelectronic component of conduction;
The turning of determining by described depression by rounding, control is from the electromagnetic emission of described microelectronic component, described rounding turning comprises: voltage source is electrically coupled to described turning, so that through the described electric conducting material of electrolyte oxidation, by oxidized material is exposed to etchant, remove oxidized material from the turning, and along with the oxidized material of removing the turning, simultaneously little electric current is guided to corner, to reduce to remove the speed of electric conducting material from described turning.
42. method as claimed in claim 41, wherein, the described depression that forms in electric conducting material is included in formation depression in the semi-conducting material.
43. method as claimed in claim 41, wherein, the rounding turning comprises: locate first electrode and second electrode, make its near or away from microelectronic substrate, voltage source will be coupled to one of at least in first and second electrodes, make from one of at least electric current in described first and second electrodes by electrolyte stream to described turning,, and make the oxidized electric conducting material of described corner be exposed to etchant with the electric conducting material of the described corner of oxidation.
44. method as claimed in claim 41 wherein, also comprises the steps:
From the electrode emission signal of telecommunication away from described microelectronic substrate;
Corner at described electric conducting material receives the described signal of telecommunication;
Make the described signal of telecommunication by electric conducting material, thus the oxidation material of partially conductive at least around the corner;
Make the oxidized part of electric conducting material be exposed to chemical etchant.
45. method as claimed in claim 41, wherein, near electrically non-conductive material, locate electric conducting material, described electrically non-conductive material is positioned between electric conducting material plane and at least one electrode, is removed to the small part electric conducting material from described turning and comprises: remove the electric conducting material that engages with described electrically non-conductive material.
46. method as claimed in claim 41 wherein, also comprises the steps:
The electrically non-conductive material layer is set on electric conducting material; With
Before being removed to the small part electric conducting material, remove to small part electrically non-conductive material layer, to expose the turning of electric conducting material from described corner.
47. method as claimed in claim 41 wherein, also comprises the steps:
Oxide skin(coating) is set on electric conducting material;
Nitride layer is set on oxide skin(coating);
Before being removed to the small part electric conducting material, remove at least a portion nitride layer and at least a portion oxide skin(coating), to expose the turning of electric conducting material from described turning.
48. method as claimed in claim 41 wherein, also comprises step: select electric conducting material to comprise the silicon of doping.
49. method as claimed in claim 41 wherein, also comprises step: behind the rounding turning, on the sidewall of described depression insulating barrier is set.
50. method as claimed in claim 41 wherein, also comprises step: form transistor gate in described depression.
51. method as claimed in claim 41, wherein, described microelectronic substrate has the surface on a plane, described depression is extended perpendicular to described plane surface, and the rounding turning comprises: locate two electrodes, make it towards described plane surface, at least one electrode is coupled to voltage source, and between described plane surface and electrode, electrolyte is set.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/888,084 US7112121B2 (en) | 2000-08-30 | 2001-06-21 | Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate |
| US09/887,767 US7094131B2 (en) | 2000-08-30 | 2001-06-21 | Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material |
| US09/887,767 | 2001-06-21 | ||
| US09/888,084 | 2001-06-21 | ||
| US09/888,002 US7160176B2 (en) | 2000-08-30 | 2001-06-21 | Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate |
| US09/888,002 | 2001-06-21 |
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| Publication Number | Publication Date |
|---|---|
| CN1516894A CN1516894A (en) | 2004-07-28 |
| CN100356523C true CN100356523C (en) | 2007-12-19 |
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| CNB028122380A Expired - Fee Related CN100356523C (en) | 2001-06-21 | 2002-06-20 | Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material |
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| EP (2) | EP1399957A2 (en) |
| JP (2) | JP4446271B2 (en) |
| KR (2) | KR100598477B1 (en) |
| CN (1) | CN100356523C (en) |
| AU (1) | AU2002316303A1 (en) |
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| US6848970B2 (en) | 2002-09-16 | 2005-02-01 | Applied Materials, Inc. | Process control in electrochemically assisted planarization |
| US6837983B2 (en) * | 2002-01-22 | 2005-01-04 | Applied Materials, Inc. | Endpoint detection for electro chemical mechanical polishing and electropolishing processes |
| US7842169B2 (en) | 2003-03-04 | 2010-11-30 | Applied Materials, Inc. | Method and apparatus for local polishing control |
| US7998335B2 (en) | 2005-06-13 | 2011-08-16 | Cabot Microelectronics Corporation | Controlled electrochemical polishing method |
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| US6143155A (en) * | 1998-06-11 | 2000-11-07 | Speedfam Ipec Corp. | Method for simultaneous non-contact electrochemical plating and planarizing of semiconductor wafers using a bipiolar electrode assembly |
| US6797623B2 (en) * | 2000-03-09 | 2004-09-28 | Sony Corporation | Methods of producing and polishing semiconductor device and polishing apparatus |
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| JP2002093761A (en) * | 2000-09-19 | 2002-03-29 | Sony Corp | Polishing method, polishing system, plating method and plating system |
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2002
- 2002-06-20 CN CNB028122380A patent/CN100356523C/en not_active Expired - Fee Related
- 2002-06-20 EP EP02746596A patent/EP1399957A2/en not_active Withdrawn
- 2002-06-20 EP EP02744464A patent/EP1399956A2/en not_active Withdrawn
- 2002-06-20 KR KR1020037016756A patent/KR100598477B1/en not_active IP Right Cessation
- 2002-06-20 WO PCT/US2002/019496 patent/WO2003001582A2/en active Application Filing
- 2002-06-20 WO PCT/US2002/019495 patent/WO2003001581A2/en active Application Filing
- 2002-06-20 JP JP2003507878A patent/JP4446271B2/en not_active Expired - Fee Related
- 2002-06-20 KR KR1020037016758A patent/KR100663662B1/en not_active IP Right Cessation
- 2002-06-20 AU AU2002316303A patent/AU2002316303A1/en not_active Abandoned
- 2002-06-20 JP JP2003507879A patent/JP2004531899A/en active Pending
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| JPH01241129A (en) * | 1988-03-23 | 1989-09-26 | Toshiba Corp | Manufacture of semiconductor device |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2004531649A (en) | 2004-10-14 |
| CN1516894A (en) | 2004-07-28 |
| EP1399957A2 (en) | 2004-03-24 |
| KR20040021616A (en) | 2004-03-10 |
| WO2003001581A2 (en) | 2003-01-03 |
| WO2003001582A3 (en) | 2003-10-30 |
| KR100663662B1 (en) | 2007-01-03 |
| KR100598477B1 (en) | 2006-07-11 |
| KR20040010773A (en) | 2004-01-31 |
| JP2004531899A (en) | 2004-10-14 |
| WO2003001582A2 (en) | 2003-01-03 |
| WO2003001581A3 (en) | 2003-10-30 |
| JP4446271B2 (en) | 2010-04-07 |
| EP1399956A2 (en) | 2004-03-24 |
| AU2002316303A1 (en) | 2003-01-08 |
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