JP2004531899A5

JP2004531899A5 -

Info

Publication number: JP2004531899A5
Application number: JP2003507879A
Authority: JP
Filing date: 2002-06-20
Publication date: 2008-08-07

Claims

In a method of processing a microelectronic substrate,
An electrolytic fluid is disposed adjacent to the conductive material of the microelectronic substrate, the conductive material having a first surface in the first plane and a recess in the first surface, the recess being defined by the second surface in the second plane. Bounded, the conductive material further has a corner between the first surface and the second surface;
A microelectron comprising: positioning first and second electrodes in fluid communication with an electrolytic fluid; and removing at least a portion of a conductive material from a corner by coupling at least one of the electrodes to a potential source. A method of processing a substrate.

The microelectronic substrate has a surface, the recess extends generally transverse to the surface, and removal of at least a portion of the conductive material positions the two electrodes facing the surface, and the electrodes 2. The method of claim 1 including coupling at least one of said to a potential source and disposing an electrolyte between the surface and the electrode.

Further comprising transmitting electrical signals from the first and second electrodes spaced from the microelectronic substrate ;
Removing at least a portion of the conductive material from the corner,
Receive electrical signals at the corners of conductive materials,
Oxidize at least part of the conductive material at the corners by passing an electrical signal through the conductive material,
The method of claim 1 including exposing the oxidized portion of the conductive material to a chemical etchant.

The first surface of the conductive material is positioned in proximity to the generally non-conductive material, the generally non-conductive material is positioned between the first surface and at least one of the electrodes, and the conductive material from the corners The method of claim 1, wherein removing at least a portion of comprises removing a conductive material engaged with a generally non-conductive material.

Disposing a generally non-conductive layer on the conductive material;
The method of claim 1, further comprising removing at least a portion of the generally non-conductive layer to expose a corner of the conductive material before removing at least a portion of the conductive material from the corner. the method of.

An oxide layer is disposed on the conductive material;
A nitride layer is disposed on the oxide layer;
The method of claim 1, further comprising removing at least a portion of the nitride layer and a portion of the oxide layer to expose the corners of the conductive material before removing the conductive material from the corners. the method of.

The method of claim 1, wherein removing the conductive material comprises oxidizing at least a portion of the conductive material by passing a current through it and exposing the portion to an etchant.

The method of claim 1, further comprising selecting the electrolytic fluid to include water and at least one of hydrochloric acid and hydrofluoric acid.

The method of claim 1, wherein removing at least a portion of the conductive material comprises passing a current through the conductive material at a rate of 1 milliampere / cm ² to 500 milliamperes / cm ² .

The method of claim 1, wherein removing at least a portion of the conductive material comprises selecting a potential source to provide 15 volts rms to the conductive material.

The method of claim 1, wherein removing at least a portion of the conductive material includes selecting a current through the conductive material to vary at 60 Hz.

The method of claim 1, wherein removing at least a portion of the conductive material includes selecting a current through the conductive material to be an alternating current.

The method of claim 1, further comprising selecting the electrolytic fluid to include water, hydrochloric acid, and hydrofluoric acid in a ratio of 500: 1: 1.

The method of claim 1, further comprising selecting a conductive material to include doped silicon.

The method of claim 1, further comprising selecting at least one of the first and second electrodes to include at least one of platinum, tantalum, and graphite.

The method of claim 1, further comprising positioning at least one of the first and second electrodes at a distance of 1 millimeter to 2 millimeters from the microelectronic substrate.

The method of claim 1, further comprising disposing an insulating layer on the wall of the recess after removing material from the corner.

The method of claim 1, further comprising disposing a dielectric in the recess.

The method of claim 1, wherein removing at least a portion of the conductive material includes reducing the rate at which the conductive material is removed from the corners by rounding the corners.

In a method of processing a microelectronic substrate,
A non-conductive material is generally placed adjacent to the conductive material of the microelectronic substrate,
Forming a recess extending through the generally nonconductive material into the conductive material, the recess forming a corner at least adjacent to the interface between the conductive material and the generally nonconductive material;
A method of processing a microelectronic substrate comprising exposing at least a portion of a conductive material from a corner by exposing the corner to an electrical potential to at least partially blunt the corner.

The removal of at least a portion of the conductive material positions the first and second electrodes proximate to and spaced from the microelectronic substrate, couples at least one of these electrodes to a potential source, and 21. The method of claim 20, comprising oxidizing the conductive material at the corner through at least one of the electrodes through the corner and exposing the oxidized conductive material at the corner to an etchant. The method described.

An electrical signal is transmitted from an electrode spaced from the microelectronic substrate,
Receive electrical signals at the corners of conductive materials,
Oxidize at least part of the conductive material at the corners by passing an electrical signal through the conductive material,
21. The method of claim 20, further comprising exposing the oxidized portion of the conductive material to a chemical etchant.

21. The method of claim 20, wherein removing at least a portion of the conductive material from the corner includes removing a conductive material engaged with a generally non-conductive material.

21. The method of claim 20, further comprising removing at least a portion of the generally non-conductive material to expose a corner of the conductive material before removing at least a portion of the conductive material from the corner. the method of.

An oxide layer is disposed on the conductive material;
A nitride layer is disposed on the oxide layer;
The method further comprises removing at least a portion of the nitride layer and a portion of the oxide layer to remove a corner of the conductive material before removing at least a portion of the conductive material from the corner. Item 21. The method according to Item 20.

21. The method of claim 20, wherein removing the conductive material comprises oxidizing at least a portion of the conductive material by passing a current through it and exposing the portion to an etchant.

The method of claim 20, wherein removing at least a portion of the conductive material comprises passing a current through the conductive material at a rate of 100 milliamps.

21. The method of claim 20, wherein removing at least a portion of the conductive material includes passing a current through the conductive material at a potential of 15 volts rms.

The method of claim 20, wherein removing at least a portion of the conductive material comprises passing a current through the conductive material at a frequency of 60 Hz.

21. The method of claim 20, comprising selecting the current through the conductive material to be an alternating current.

21. The method of claim 20, further comprising selecting a conductive material to include doped silicon.

Removal of at least a portion of the conductive material positions the first and second electrodes in fluid communication with the corners, couples at least one of the electrodes to a potential source, and at least one of platinum, tantalum, and graphite. 21. The method of claim 20, further comprising selecting at least one of the first and second electrodes to include:

21. The method of claim 20, further comprising disposing an insulating layer on the wall of the recess after removing material from the corner.

21. The method of claim 20, further comprising disposing the transistor gate in the recess.

The microelectronic substrate has a surface, the recess extends generally transverse to the surface, and removal of at least a portion of the conductive material positions the two electrodes facing the surface, and the electrodes 21. The method of claim 20, comprising coupling at least one of the electrodes to a potential source and placing an electrolyte between the surface and the electrode.

21. The method of claim 20, further comprising reducing the rate at which material is removed from the corner by rounding the corner.

In a method of processing a microelectronic substrate,
Forming an oxide layer on the doped silicon material of the microelectronic substrate;
A nitride layer is disposed on the oxide layer;
Etching recesses extending through the nitride and oxide layers into the conductive material;
Removing a portion of the nitride and oxide layers adjacent to the recess to expose the corners of the conductive material, and placing the electrolytic fluid adjacent to the corners of the conductive material;
At least one of the conductive materials at the corners is positioned by positioning the first and second electrodes proximate to and spaced from the microelectronic substrate and coupling at least one of these electrodes to a potential source. Oxidize part
Removing at least a portion of the oxidized material by exposing the oxidized material to an etchant;
A method of processing a microelectronic substrate, comprising reducing the current flow from at least one electrode to a corner by reducing the rate at which material is removed from the corner by rounding the corner.

Removal of a portion of the nitride and oxide layers proximate to the recess includes removing material from the nitride layer at a first rate and removing material from the oxide layer at a second rate, wherein the first rate is 38. The method of claim 37, wherein the method is approximately equal to the second speed.

38. The method of claim 37, further comprising removing the oxide and nitride layers with an etchant after removing at least a portion of the oxidized material.

Removal of a portion of the nitride and oxide layers proximate to the recess includes placing an etchant adjacent to the nitride and oxide layers, the etchant having a chemical composition approximately the same as the chemical composition of the electrolytic fluid. 38. The method of claim 37, comprising:

In a method of processing a microelectronic substrate,
A recess is formed in the conductive material of the microelectronic substrate, and this recess forms a corner at the intersection of the hole and the plane of the conductive material,
Forming conductive microelectronic features in the recesses,
Controlling electromagnetic radiation from conductive microelectronic features by rounding the corners constituted by the recesses, rounding the corners electrically couples the potential source to the corners to oxidize the conductive material, A method of processing a microelectronic substrate comprising removing oxidized material from a corner by exposing the oxidized material to an etchant.

42. The method of claim 41, wherein forming a recess in the conductive material includes forming a recess in the semiconductor material.

Rounding the corners positions the first and second electrodes proximate to and spaced from the microelectronic substrate, coupling at least one of the first and second electrodes to a potential source; Passing an electric current from at least one of the first and second electrodes through the electrolytic fluid to the corners to oxidize the conductive material at the corners and exposing the oxidized conductive material at the corners to the etchant; 42. The method of claim 41, comprising.

An electrical signal is transmitted from an electrode spaced from the microelectronic substrate,
Receive electrical signals at the corners of conductive materials,
Oxidize at least part of the conductive material at the corners by passing an electrical signal through the conductive material,
42. The method of claim 41, further comprising exposing the oxidized portion of the conductive material to a chemical etchant.

The conductive material is positioned in proximity to the generally non-conductive material, the generally non-conductive material is positioned between the plane of the conductive material and at least one of the electrodes, and at least a portion of the conductive material from the corners. 42. The method of claim 41, wherein removing comprises removing conductive material engaged with a generally non-conductive material.

Placing a non-conductive layer on conductive material,
42. The method of claim 41, further comprising removing at least a portion of the non-conductive layer to expose a corner of the conductive material before removing at least a portion of the conductive material from the corner. Method.

An oxide layer is disposed on the conductive material;
A nitride layer is disposed on the oxide layer;
The method further includes removing at least a portion of the nitride layer and a portion of the oxide layer to expose a corner portion of the conductive material before removing at least a portion of the conductive material from the corner portion. 42. The method of claim 41.

42. The method of claim 41, further comprising selecting a conductive material to include doped silicon.

42. The method of claim 41, further comprising disposing an insulating layer on the wall of the recess after rounding the corners.

42. The method of claim 41, further comprising forming a transistor gate in the recess.

The microelectronic substrate has a surface, the recesses extend substantially transversely to the surface, and rounding the corners positions the two electrodes facing the surface, 42. The method of claim 41, comprising coupling at least one of the to a potential source and disposing an electrolyte between the surface and the electrode.