JP2004531449A5 - - Google Patents

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Publication number
JP2004531449A5
JP2004531449A5 JP2002589416A JP2002589416A JP2004531449A5 JP 2004531449 A5 JP2004531449 A5 JP 2004531449A5 JP 2002589416 A JP2002589416 A JP 2002589416A JP 2002589416 A JP2002589416 A JP 2002589416A JP 2004531449 A5 JP2004531449 A5 JP 2004531449A5
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JP
Japan
Prior art keywords
layer
quartz glass
stabilizing layer
glass crucible
produced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002589416A
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English (en)
Japanese (ja)
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JP2004531449A (ja
JP4262483B2 (ja
Filing date
Publication date
Priority claimed from DE10114698A external-priority patent/DE10114698A1/de
Application filed filed Critical
Publication of JP2004531449A publication Critical patent/JP2004531449A/ja
Publication of JP2004531449A5 publication Critical patent/JP2004531449A5/ja
Application granted granted Critical
Publication of JP4262483B2 publication Critical patent/JP4262483B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002589416A 2001-03-23 2002-03-20 石英ガラスの構成材およびその製造方法 Expired - Fee Related JP4262483B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10114698A DE10114698A1 (de) 2001-03-23 2001-03-23 Bauteil aus Quarzglas sowie Verfahren zur Herstellung desselben
PCT/EP2002/003118 WO2002092525A1 (de) 2001-03-23 2002-03-20 Bauteil aus quarzglas sowie verfahren zur herstellung desselben

Publications (3)

Publication Number Publication Date
JP2004531449A JP2004531449A (ja) 2004-10-14
JP2004531449A5 true JP2004531449A5 (https=) 2006-01-05
JP4262483B2 JP4262483B2 (ja) 2009-05-13

Family

ID=7679010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002589416A Expired - Fee Related JP4262483B2 (ja) 2001-03-23 2002-03-20 石英ガラスの構成材およびその製造方法

Country Status (8)

Country Link
US (1) US20040115440A1 (https=)
EP (1) EP1370498B1 (https=)
JP (1) JP4262483B2 (https=)
KR (1) KR100837476B1 (https=)
CN (1) CN1239423C (https=)
DE (2) DE10114698A1 (https=)
NO (1) NO20034212L (https=)
WO (1) WO2002092525A1 (https=)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4518410B2 (ja) 2005-03-09 2010-08-04 エボニック デグサ ゲーエムベーハー プラズマ溶射された酸化アルミニウム層
EP1700926A1 (de) * 2005-03-09 2006-09-13 Degussa AG Plasmagespritzte Schichten aus Aluminiumoxid
DE102008033946B3 (de) 2008-07-19 2009-09-10 Heraeus Quarzglas Gmbh & Co. Kg Quarzglastiegel mit einer Stickstoffdotierung und Verfahren zur Herstellung eines derartigen Tiegels
JP5102744B2 (ja) * 2008-10-31 2012-12-19 ジャパンスーパークォーツ株式会社 石英ルツボ製造用モールド
DE102009013715B4 (de) 2009-03-20 2013-07-18 Heraeus Quarzglas Gmbh & Co. Kg Verfahren zur Herstellung eines Quarzglaskörpers, insbesondere eines Quarzglastiegels
KR101357740B1 (ko) 2009-07-31 2014-02-03 쟈판 스파 쿼츠 가부시키가이샤 실리콘 단결정 인상용 실리카 유리 도가니
WO2011030658A1 (ja) 2009-09-09 2011-03-17 ジャパンスーパークォーツ株式会社 複合ルツボ及びその製造方法並びにシリコン結晶の製造方法
JP5128570B2 (ja) * 2009-10-22 2013-01-23 ジャパンスーパークォーツ株式会社 複合ルツボ及びその製造方法
JP5574534B2 (ja) * 2010-12-28 2014-08-20 株式会社Sumco 複合ルツボ
JP5488519B2 (ja) * 2011-04-11 2014-05-14 信越半導体株式会社 石英ガラスルツボ及びその製造方法、並びにシリコン単結晶の製造方法
TW201245474A (en) * 2011-05-12 2012-11-16 Hon Hai Prec Ind Co Ltd Evaporation source device and a coating method using the same
KR101282766B1 (ko) * 2011-05-16 2013-07-05 (주)세렉트론 용융 도가니의 재활용 방법 및 그에 의해 제조된 도가니
DE102012008437B3 (de) * 2012-04-30 2013-03-28 Heraeus Quarzglas Gmbh & Co. Kg Verfahren zur Herstellung synthetischer Quarzglaskörnung
DE202012005644U1 (de) * 2012-06-08 2012-09-20 Matthias Brenncke Glasfeuerstelle zur Ermöglichung eines allseitigen Feuererlebnisses ohne das Erfordernis eines hitzebeständigen Untergrundes.
DE102012011793A1 (de) 2012-06-15 2013-12-19 Heraeus Quarzglas Gmbh & Co. Kg Verfahren zur Herstellung eines Quarzglastiegels
CN105210173A (zh) * 2013-05-23 2015-12-30 应用材料公司 用于半导体处理腔室的经涂布的衬里组件
US11053152B2 (en) 2015-12-18 2021-07-06 Heraeus Quarzglas Gmbh & Co. Kg Spray granulation of silicon dioxide in the preparation of quartz glass
EP3390290B1 (de) 2015-12-18 2023-03-15 Heraeus Quarzglas GmbH & Co. KG Herstellung eines opaken quarzglaskörpers
JP7044454B2 (ja) 2015-12-18 2022-03-30 ヘレウス クワルツグラス ゲーエムベーハー ウント コンパニー カーゲー 石英ガラス調製時の中間体としての炭素ドープ二酸化ケイ素造粒体の調製
CN108698894A (zh) 2015-12-18 2018-10-23 贺利氏石英玻璃有限两合公司 在多腔式烘箱中制备石英玻璃体
US11952303B2 (en) 2015-12-18 2024-04-09 Heraeus Quarzglas Gmbh & Co. Kg Increase in silicon content in the preparation of quartz glass
WO2017103160A1 (de) 2015-12-18 2017-06-22 Heraeus Quarzglas Gmbh & Co. Kg Herstellung von quarzglaskörpern aus siliziumdioxidgranulat
TWI794149B (zh) 2015-12-18 2023-03-01 德商何瑞斯廓格拉斯公司 石英玻璃粉粒、不透明成型體及彼等之製備方法
US10676388B2 (en) 2015-12-18 2020-06-09 Heraeus Quarzglas Gmbh & Co. Kg Glass fibers and pre-forms made of homogeneous quartz glass
WO2017103115A2 (de) 2015-12-18 2017-06-22 Heraeus Quarzglas Gmbh & Co. Kg Herstellung eines quarzglaskörpers in einem schmelztiegel aus refraktärmetall
US11492282B2 (en) 2015-12-18 2022-11-08 Heraeus Quarzglas Gmbh & Co. Kg Preparation of quartz glass bodies with dew point monitoring in the melting oven
CN105861972A (zh) * 2016-04-15 2016-08-17 航天材料及工艺研究所 一种氧化铬-氧化钛基高温高发射率涂层及其制备方法
JP6681303B2 (ja) * 2016-09-13 2020-04-15 クアーズテック株式会社 石英ガラスルツボ及びその製造方法
CN108531980B (zh) * 2018-05-29 2020-12-11 宁夏富乐德石英材料有限公司 改良石英坩埚及其制作方法
JP7157932B2 (ja) * 2019-01-11 2022-10-21 株式会社Sumco シリカガラスルツボの製造装置および製造方法
WO2022131047A1 (ja) * 2020-12-18 2022-06-23 株式会社Sumco 石英ガラスルツボ及びその製造方法並びにシリコン単結晶の製造方法
CN115557710B (zh) * 2022-11-10 2025-09-16 浙江美晶新材料股份有限公司 一种单晶石英坩埚喷涂装置

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Publication number Priority date Publication date Assignee Title
US4395432A (en) * 1981-12-16 1983-07-26 Westinghouse Electric Corp. β-Alumina coating
AU2543397A (en) * 1996-03-29 1997-10-22 Garth W. Billings Refractory nitride, carbide, ternary oxide, nitride/oxide, oxide/carbide, oxycarbide, and oxynitride materials and articles
US6479108B2 (en) * 2000-11-15 2002-11-12 G.T. Equipment Technologies, Inc. Protective layer for quartz crucibles used for silicon crystallization

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