JP2004531074A5 - - Google Patents

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Publication number
JP2004531074A5
JP2004531074A5 JP2003506017A JP2003506017A JP2004531074A5 JP 2004531074 A5 JP2004531074 A5 JP 2004531074A5 JP 2003506017 A JP2003506017 A JP 2003506017A JP 2003506017 A JP2003506017 A JP 2003506017A JP 2004531074 A5 JP2004531074 A5 JP 2004531074A5
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JP
Japan
Prior art keywords
group
temperature
silicon
sintering
doping
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Application number
JP2003506017A
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English (en)
Japanese (ja)
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JP4335668B2 (ja
JP2004531074A (ja
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Priority claimed from GBGB0114896.4A external-priority patent/GB0114896D0/en
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Publication of JP2004531074A publication Critical patent/JP2004531074A/ja
Publication of JP2004531074A5 publication Critical patent/JP2004531074A5/ja
Application granted granted Critical
Publication of JP4335668B2 publication Critical patent/JP4335668B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003506017A 2001-06-19 2002-06-17 太陽電池の製造方法 Expired - Fee Related JP4335668B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0114896.4A GB0114896D0 (en) 2001-06-19 2001-06-19 Process for manufacturing a solar cell
PCT/GB2002/002673 WO2002103810A1 (en) 2001-06-19 2002-06-17 Process for manufacturing a solar cell

Publications (3)

Publication Number Publication Date
JP2004531074A JP2004531074A (ja) 2004-10-07
JP2004531074A5 true JP2004531074A5 (enExample) 2005-08-04
JP4335668B2 JP4335668B2 (ja) 2009-09-30

Family

ID=9916873

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003506017A Expired - Fee Related JP4335668B2 (ja) 2001-06-19 2002-06-17 太陽電池の製造方法

Country Status (7)

Country Link
US (1) US7071018B2 (enExample)
EP (1) EP1397839A1 (enExample)
JP (1) JP4335668B2 (enExample)
CN (1) CN100383984C (enExample)
AU (1) AU2002257979B2 (enExample)
GB (1) GB0114896D0 (enExample)
WO (1) WO2002103810A1 (enExample)

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CN102097534A (zh) * 2010-11-18 2011-06-15 中国科学院宁波材料技术与工程研究所 同时形成晶体硅太阳能电池pn结和氮化硅减反射膜的方法
CN102082199B (zh) * 2010-11-19 2012-05-02 山东力诺太阳能电力股份有限公司 一种用于晶体硅太阳能电池刻槽埋栅的方法
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EP0851511A1 (en) * 1996-12-24 1998-07-01 IMEC vzw Semiconductor device with two selectively diffused regions

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