JP4335668B2 - 太陽電池の製造方法 - Google Patents

太陽電池の製造方法 Download PDF

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Publication number
JP4335668B2
JP4335668B2 JP2003506017A JP2003506017A JP4335668B2 JP 4335668 B2 JP4335668 B2 JP 4335668B2 JP 2003506017 A JP2003506017 A JP 2003506017A JP 2003506017 A JP2003506017 A JP 2003506017A JP 4335668 B2 JP4335668 B2 JP 4335668B2
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Prior art keywords
wafer
silicon
aluminum
layer
sintering
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Expired - Fee Related
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JP2003506017A
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Japanese (ja)
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JP2004531074A (ja
JP2004531074A5 (enExample
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メイスン，ナイジェル，ブルーネル
ラッセル，リチャード，ウォルター，ジョン
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ビーピー オルタネイティブ エナジー インターナショナル リミテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
JP2003506017A 2001-06-19 2002-06-17 太陽電池の製造方法 Expired - Fee Related JP4335668B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0114896.4A GB0114896D0 (en) 2001-06-19 2001-06-19 Process for manufacturing a solar cell
PCT/GB2002/002673 WO2002103810A1 (en) 2001-06-19 2002-06-17 Process for manufacturing a solar cell

Publications (3)

Publication Number Publication Date
JP2004531074A JP2004531074A (ja) 2004-10-07
JP2004531074A5 JP2004531074A5 (enExample) 2005-08-04
JP4335668B2 true JP4335668B2 (ja) 2009-09-30

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JP2003506017A Expired - Fee Related JP4335668B2 (ja) 2001-06-19 2002-06-17 太陽電池の製造方法

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US (1) US7071018B2 (enExample)
EP (1) EP1397839A1 (enExample)
JP (1) JP4335668B2 (enExample)
CN (1) CN100383984C (enExample)
AU (1) AU2002257979B2 (enExample)
GB (1) GB0114896D0 (enExample)
WO (1) WO2002103810A1 (enExample)

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US20080223440A1 (en) * 2007-01-18 2008-09-18 Shuran Sheng Multi-junction solar cells and methods and apparatuses for forming the same
US20080173350A1 (en) * 2007-01-18 2008-07-24 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US8203071B2 (en) * 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US7582515B2 (en) * 2007-01-18 2009-09-01 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20080245414A1 (en) * 2007-04-09 2008-10-09 Shuran Sheng Methods for forming a photovoltaic device with low contact resistance
JP5576273B2 (ja) 2007-07-03 2014-08-20 マイクロリンク デバイセズ インコーポレイテッド Ｉｉｉ−ｖ化合物薄膜太陽電池の加工方法
US7875486B2 (en) * 2007-07-10 2011-01-25 Applied Materials, Inc. Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning
US7763535B2 (en) * 2007-08-30 2010-07-27 Applied Materials, Inc. Method for producing a metal backside contact of a semiconductor component, in particular, a solar cell
EP2031659A1 (de) * 2007-08-30 2009-03-04 Applied Materials, Inc. Verfahren zur Erzeugung eines metallischen Rückkontaktes eines Halbleiterbauelements, insbesondere einer Solarzelle
CN101855181A (zh) * 2007-08-31 2010-10-06 Csg索拉尔有限公司 玻璃的研磨-蚀刻纹理化
US20090104733A1 (en) * 2007-10-22 2009-04-23 Yong Kee Chae Microcrystalline silicon deposition for thin film solar applications
JP2011503848A (ja) * 2007-11-02 2011-01-27 アプライド マテリアルズ インコーポレイテッド 堆積プロセス間のプラズマ処置
US20090130827A1 (en) * 2007-11-02 2009-05-21 Soo Young Choi Intrinsic amorphous silicon layer
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US8895842B2 (en) * 2008-08-29 2014-11-25 Applied Materials, Inc. High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells
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CN101630702B (zh) * 2009-07-30 2012-02-01 东莞南玻太阳能玻璃有限公司 一种太阳能电池组件镀膜盖板玻璃的制造方法
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WO2011053344A1 (en) * 2009-10-26 2011-05-05 Narayanan Srinivasamohan Crystalline silicon solar cell and manufacturing process
US9634165B2 (en) * 2009-11-02 2017-04-25 International Business Machines Corporation Regeneration method for restoring photovoltaic cell efficiency
DE102009053818A1 (de) 2009-11-18 2011-05-19 Evonik Degussa Gmbh Dotierung von Siliciumschichten aus flüssigen Silanen für Elektronik- und Solar-Anwendungen
US20110126875A1 (en) * 2009-12-01 2011-06-02 Hien-Minh Huu Le Conductive contact layer formed on a transparent conductive layer by a reactive sputter deposition
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US8865502B2 (en) * 2010-06-10 2014-10-21 International Business Machines Corporation Solar cells with plated back side surface field and back side electrical contact and method of fabricating same
DE102010025281A1 (de) * 2010-06-28 2011-12-29 Centrotherm Photovoltaics Ag Verfahren zur lokalen Entfernung einer Oberflächenschicht sowie Solarzelle
DE102010034551A1 (de) * 2010-08-17 2012-02-23 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Verfahren zur Herstellung eines Aluminium-Rückseitenreflektors für eine Si-Solarzelle und Si-Solarzelle mit einem solchen Reflektor
CN102468363B (zh) * 2010-11-09 2013-07-10 浚鑫科技股份有限公司 低效太阳能电池处理方法
CN102097534A (zh) * 2010-11-18 2011-06-15 中国科学院宁波材料技术与工程研究所 同时形成晶体硅太阳能电池pn结和氮化硅减反射膜的方法
CN102082199B (zh) * 2010-11-19 2012-05-02 山东力诺太阳能电力股份有限公司 一种用于晶体硅太阳能电池刻槽埋栅的方法
TWI467783B (zh) * 2011-11-10 2015-01-01 Nat Univ Tsing Hua A solar cell manufacturing method and solar cell with curved embedded electrode wire
KR101921738B1 (ko) 2012-06-26 2018-11-23 엘지전자 주식회사 태양 전지
CN103107237B (zh) * 2012-12-06 2016-03-23 杭州赛昂电力有限公司 单晶硅太阳能电池及其制作方法
US20150179834A1 (en) * 2013-12-20 2015-06-25 Mukul Agrawal Barrier-less metal seed stack and contact
CN104393095B (zh) * 2014-09-25 2016-09-07 锦州华昌光伏科技有限公司 n型硅太阳电池、其制备方法及铝蒸发扩散装置
CN109216479A (zh) * 2018-09-07 2019-01-15 泰州隆基乐叶光伏科技有限公司 一种太阳能电池及其生产工艺

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JP3032422B2 (ja) 1994-04-28 2000-04-17 シャープ株式会社 太陽電池セルとその製造方法
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EP0851511A1 (en) * 1996-12-24 1998-07-01 IMEC vzw Semiconductor device with two selectively diffused regions

Also Published As

Publication number Publication date
AU2002257979B2 (en) 2007-10-04
US7071018B2 (en) 2006-07-04
EP1397839A1 (en) 2004-03-17
GB0114896D0 (en) 2001-08-08
CN100383984C (zh) 2008-04-23
US20050074917A1 (en) 2005-04-07
JP2004531074A (ja) 2004-10-07
WO2002103810A1 (en) 2002-12-27
CN1543681A (zh) 2004-11-03

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