JP2004529488A5 - - Google Patents

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Publication number
JP2004529488A5
JP2004529488A5 JP2002561569A JP2002561569A JP2004529488A5 JP 2004529488 A5 JP2004529488 A5 JP 2004529488A5 JP 2002561569 A JP2002561569 A JP 2002561569A JP 2002561569 A JP2002561569 A JP 2002561569A JP 2004529488 A5 JP2004529488 A5 JP 2004529488A5
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JP
Japan
Prior art keywords
polishing
polishing system
substrate
agent
polar moiety
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002561569A
Other languages
English (en)
Japanese (ja)
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JP2004529488A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/US2002/005005 external-priority patent/WO2002061008A2/en
Publication of JP2004529488A publication Critical patent/JP2004529488A/ja
Publication of JP2004529488A5 publication Critical patent/JP2004529488A5/ja
Pending legal-status Critical Current

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JP2002561569A 2001-01-16 2002-01-14 アルカリ金属含有研磨系及び方法 Pending JP2004529488A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US26192601P 2001-01-16 2001-01-16
PCT/US2002/005005 WO2002061008A2 (en) 2001-01-16 2002-01-14 Alkali metal-containing polishing system and method

Publications (2)

Publication Number Publication Date
JP2004529488A JP2004529488A (ja) 2004-09-24
JP2004529488A5 true JP2004529488A5 (OSRAM) 2005-06-09

Family

ID=22995481

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002561569A Pending JP2004529488A (ja) 2001-01-16 2002-01-14 アルカリ金属含有研磨系及び方法

Country Status (7)

Country Link
US (1) US6612911B2 (OSRAM)
EP (1) EP1358289A2 (OSRAM)
JP (1) JP2004529488A (OSRAM)
CN (1) CN1610730A (OSRAM)
AU (1) AU2002248463A1 (OSRAM)
MY (1) MY134021A (OSRAM)
WO (1) WO2002061008A2 (OSRAM)

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US6953389B2 (en) * 2001-08-09 2005-10-11 Cheil Industries, Inc. Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching
US7004819B2 (en) * 2002-01-18 2006-02-28 Cabot Microelectronics Corporation CMP systems and methods utilizing amine-containing polymers
TWI256971B (en) * 2002-08-09 2006-06-21 Hitachi Chemical Co Ltd CMP abrasive and method for polishing substrate
US20100009540A1 (en) * 2002-09-25 2010-01-14 Asahi Glass Company Limited Polishing compound, its production process and polishing method
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JP2004266155A (ja) * 2003-03-03 2004-09-24 Jsr Corp 化学機械研磨用水系分散体およびこれを用いた化学機械研磨方法ならびに半導体装置の製造方法
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US6803353B2 (en) 2002-11-12 2004-10-12 Atofina Chemicals, Inc. Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
US7504044B2 (en) * 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US8251777B2 (en) * 2005-06-30 2012-08-28 Cabot Microelectronics Corporation Polishing slurry for aluminum and aluminum alloys
US8062096B2 (en) * 2005-06-30 2011-11-22 Cabot Microelectronics Corporation Use of CMP for aluminum mirror and solar cell fabrication
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US8162723B2 (en) * 2006-03-09 2012-04-24 Cabot Microelectronics Corporation Method of polishing a tungsten carbide surface
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US7998866B2 (en) * 2006-09-05 2011-08-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
US7678700B2 (en) * 2006-09-05 2010-03-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
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WO2008095078A1 (en) * 2007-01-31 2008-08-07 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
DE102008059044B4 (de) * 2008-11-26 2013-08-22 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe mit einer verspannt-relaxierten Si1-xGex-Schicht
KR101907229B1 (ko) * 2011-02-03 2018-10-11 니타 하스 인코포레이티드 연마용 조성물 및 그것을 이용한 연마 방법
SG11201403505UA (en) * 2011-12-21 2014-07-30 Basf Se Method for manufacturing cmp composition and application thereof
US9376594B2 (en) 2012-03-16 2016-06-28 Fujimi Incorporated Polishing composition
CN104109483B (zh) * 2013-04-17 2016-11-09 江阴江化微电子材料股份有限公司 一种太阳能电池片抛光液及其制备方法
US11026765B2 (en) 2013-07-10 2021-06-08 H2O Tech, Inc. Stabilized, water-jet slurry apparatus and method
WO2016111718A1 (en) 2015-01-05 2016-07-14 Rhodia Operations Amine-imino dialcohol neutralizing agents for low volatile compound aqueous organic coating compositions and methods for using same
CN107953152A (zh) * 2017-12-19 2018-04-24 北京创昱科技有限公司 一种GaAs晶片的精密抛光方法
US20210348027A1 (en) * 2020-05-06 2021-11-11 Taiwan Semiconductor Manufacturing Company Ltd. Magnetic polishing slurry and method for polishing a workpiece
JP7628363B2 (ja) * 2020-07-02 2025-02-10 株式会社ディスコ 研磨液

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