TW201211219A - Polishing composition for primary polishing of wafer - Google Patents
Polishing composition for primary polishing of wafer Download PDFInfo
- Publication number
- TW201211219A TW201211219A TW099130989A TW99130989A TW201211219A TW 201211219 A TW201211219 A TW 201211219A TW 099130989 A TW099130989 A TW 099130989A TW 99130989 A TW99130989 A TW 99130989A TW 201211219 A TW201211219 A TW 201211219A
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing
- wafer
- rough
- abrasive
- composition
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 100
- 239000000203 mixture Substances 0.000 title claims abstract description 42
- 239000002245 particle Substances 0.000 claims abstract description 31
- 239000003381 stabilizer Substances 0.000 claims abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 235000012431 wafers Nutrition 0.000 claims description 43
- 238000000227 grinding Methods 0.000 claims description 15
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 12
- 239000002253 acid Substances 0.000 claims description 9
- 239000002738 chelating agent Substances 0.000 claims description 9
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 7
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 7
- 239000004094 surface-active agent Substances 0.000 claims description 7
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 claims description 6
- 150000007522 mineralic acids Chemical class 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical group NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 3
- DVUVKWLUHXXIHK-UHFFFAOYSA-N tetraazanium;tetrahydroxide Chemical compound [NH4+].[NH4+].[NH4+].[NH4+].[OH-].[OH-].[OH-].[OH-] DVUVKWLUHXXIHK-UHFFFAOYSA-N 0.000 claims description 3
- 150000007513 acids Chemical class 0.000 claims description 2
- 150000001412 amines Chemical class 0.000 claims description 2
- 239000004327 boric acid Substances 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- 230000001476 alcoholic effect Effects 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 229910000416 bismuth oxide Inorganic materials 0.000 claims 1
- 125000005619 boric acid group Chemical group 0.000 claims 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 229940070527 tourmaline Drugs 0.000 claims 1
- 229910052613 tourmaline Inorganic materials 0.000 claims 1
- 239000011032 tourmaline Substances 0.000 claims 1
- 239000006227 byproduct Substances 0.000 abstract description 4
- 239000002002 slurry Substances 0.000 abstract description 4
- 239000003795 chemical substances by application Substances 0.000 abstract description 2
- 239000003002 pH adjusting agent Substances 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000001879 gelation Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- -1 alcohol amine Chemical class 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 235000005985 organic acids Nutrition 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 101710179738 6,7-dimethyl-8-ribityllumazine synthase 1 Proteins 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- XNSPQPOQXWCGKC-UHFFFAOYSA-N C(C)(=O)O.C(C)(=O)O.C(C)(=O)O.[N] Chemical compound C(C)(=O)O.C(C)(=O)O.C(C)(=O)O.[N] XNSPQPOQXWCGKC-UHFFFAOYSA-N 0.000 description 1
- 244000115658 Dahlia pinnata Species 0.000 description 1
- 235000012040 Dahlia pinnata Nutrition 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- 101710186608 Lipoyl synthase 1 Proteins 0.000 description 1
- 101710137584 Lipoyl synthase 1, chloroplastic Proteins 0.000 description 1
- 101710090391 Lipoyl synthase 1, mitochondrial Proteins 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229930013930 alkaloid Natural products 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 235000021438 curry Nutrition 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000002013 dioxins Chemical class 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- 150000004965 peroxy acids Chemical class 0.000 description 1
- 150000004885 piperazines Chemical class 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- ILJSQTXMGCGYMG-UHFFFAOYSA-N triacetic acid Chemical compound CC(=O)CC(=O)CC(O)=O ILJSQTXMGCGYMG-UHFFFAOYSA-N 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
201211219 • 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種用於粗拋晶圓之研磨組成物，特別 是一種減緩拋光速度衰退之用於粗拋晶圓的研磨組成物。 【先前技術】 半導體工業中，矽晶圓基材必須予以處理成平坦表面 後，才可作為積體電路元件(IC Device)製造之用。一般而 5，用於平坦化矽晶圓表面之拋光方法，係將晶圓置於配 •有拋光墊(Pad)之旋轉拋光機台上，於晶圓表面施用包含次 微米粒子之拋光漿液，以達到平坦化之效果。 化學機械拋光(C Μ P)程序為矽晶圓製造中的最後程序 用以降低晶圓表面的微粗糙度以使晶圓表面平面化，及移 除物理表面缺陷’例如微到痕和凹陷標諸。於晶圓拋光之 後’彼等即具有一具有低表面缺陷的鏡面。抛光晶圓所用 的CMP程序通常係以二或更多道步驟進行。粗拋晶圓步 φ 驟為一需要高拋光速度以移除晶圓表面上的深刮痕之拋光 步驟。然而，拋光時產生的副產物會令如二氧化石夕之研磨 粒子失去懸浮能力，瞬時膠化附著於拋光墊表面，使拋光 能力下降，且當拋光速度加快，上述問題更為嚴重。 另外，美國專利第7,253，111號揭露一種用於研磨阻 障層（barrier)之拋光溶液，其係使用EDTA或檸檬酸減緩拋 光溶液之黃變。另外，美國專利第6,509,269號則揭露— 種含非離子性界面活性劑之拋光溶液，以減緩拋光墊之頓 化或光滑（glazing)，然而該拋光溶液係用於鋁或鋁合金之 111700 3 201211219 平坦化，而非用於晶圓之粗拋。 是以’如何開發一種用於粗拋晶圓之研磨組成物，降 低拋光墊拋光速度之衰退’維持拋光研磨品質，且能提升 拋光墊之壽命，實為目前亟欲解決的課題。 【發明内容】 為達成上揭及其他目的，本發明提供一種用於粗拋晶 圓之研磨組成物，包括：（A)具有平均粒徑為5至150奈 米之研磨粒子；（B) pH穩定劑，其pKa值介於9至10，且 該pH穩定劑之含量係佔該研磨粒子之7至28wt%;(C)研 磨加速劑；以及(D)水。 本發明之研磨粒子係選自二氧化叾夕、三氧化二铭、二 氧化鈦、二氧化鈽及二氧化鍅所組成群組的一種或多種， 且使用平均粒徑分布較小的研磨粒子有利於提升拋光速 度。 在本發明之用於粗拋晶圓之研磨組成物中，該pH穩 定劑係可選自烷醇胺、無機酸及有機酸所組成群組的一種 或多種。該炫•醇胺係可選自單乙醇胺(monoethanolamine)、 二乙醇胺（diethanolamine)及三乙醇胺（triethanolamine)所 組成組群之一種或多種，而該無機酸可為硼酸。 此外，為有效提供較快之拋光速度，本發明之用於粗 拋晶圓之研磨組成物包含研磨加速劑，該研磨加速劑係可 選自哌畊(piperazine)、哌畊鹽、氫氧化四曱銨 (tetramethylammonium hydroxide)及氫氧化四曱銨鹽所組 成組群之一種或多種’且該研磨加速劑之含量係佔該研磨E g 2 4 111700 201211219 粒子之11至咖❿本發明之用於㈣晶圓之研 物還可包括pH調整劑，其係選自氫氧化納、氫、'’且成 硫酸、氫氣酸或鱗酸，視需要添加之pH調整劑，、 組成物之pH值調整至在10左右。 疋將 於另一態樣中，本發明之用於粗抛晶圓之研磨 復可包括S合劑及界面活性劑，該s合劑之含量係估 磨粒子之5.9 i 2Gwt% ’界面活性劑之含制㈣研磨粒 子之 0.16 至 〇.18wt%。 ” 本發明之研磨組成物係供用於粗拋晶圓，能有效減少 研磨粒子與拋光過程中之副產物膠化，而附著於拋光墊， 且於提升拋光速度的同時能維持拋光品質穩定，並延缓拋 光墊變色，提升拋光墊之性能及壽命。 【實施方式】 以下藉由特定的具體實施例說明本發明之實施方 式’熟習此技藝之人士可由本說明書所揭示之内容輕易地 鲁瞭解本發明之優點及功效。本發明亦可藉由其它不同之實 施方式加以施行或應用，本說明書中的各項細節亦可基於 不同觀點與應用，在不悖離本發明所揭示之精神下賦予不 同之修飾與變更。 本發明係提供一種用於粗拋晶圓之研磨組成物，包 括：（A)具有平均粒徑為5至150奈米之研磨粒子；（B) pH 穩定劑’其pKa值介於9至10，且該pH穩定劑之含量係 佔該研磨粒子之7至28wt%;(C)研磨加速劑；以及（D)水。 本發明之研磨粒子係選自二氧化矽、三氧化二鋁、二 5 111700 201211219 乳化欽:二氧化鈽及二氧化錯所組成鮮組0卜種或多種， 且使用平⑼彳！分布較小的研磨粒子有利於提升拋光速 度。 在本發明之用於粗拋晶圓之研磨組成物中，該pH穩 疋劑係可選自其pKa值介於9至1()之㈣胺、無機酸及 有機酸所組成群組的-種或多種。該燒醇胺係可選自單乙 醇胺(pKa 9.5G)、二乙醇胺(pKa , 93)及三乙醇胺(响 9.8)所，，且成組群之-種或多種’㈣無機酸之實例如棚酸 (pKa 9.23)。本發明組成物中，添加穩定劑能在進行 阳圓粗拋％’使本發明組成物之pH值得以維持在9至⑺·5 之門避免局°卩PH值的過酸及過鹼，能有效減少研磨粒 子與拋光過程中之副產物膠化，而附著於拋光墊，且於提 升拋光速度的同時能維持拋光品，並延緩拋光塾變 色’提升拋光墊之性能及壽命。 此外，為有效提供較快之拋光速度，本發明之用於粗 拋晶圓之研磨組成⑯包含研磨加速齊|丨，該研磨力口速劑係可 選自哌哄(piperazine)、哌哄鹽、氫氧化四曱銨及氫氧化四 曱銨鹽所組成組群之一種或多種，且該研磨加速劑之含量 係佔該研磨粒子之11至35wt%。本發明之用於粗拋晶圓 之研磨組成物還包括pH調整劑，其係選自氫氧化鈉、氫 氧化鉀、硫酸、氫氣酸或磷酸，視需要添加之pH調整劑 主要是將組成物之pH值調整至在1〇左右。 於另一態樣中，本發明之用於粗拋晶圓之研磨組成物 復可包括螯合劑及界面活性劑，該螯合劑之含量係佔該研 111700 6 201211219 磨粒子之5.9至2〇wt% 子之 0.16 至 〇.18wt%。 酸之鈉鹽做為螯合劑， 螯合劑。 ’界面活性劑之含量則佔該研磨粒 於具體實施例中，係使用氮基三醋 當然’亦可直接使用氮基三醋酸為 實施例 製備例用於粗抛晶圓 鲁 日日lal之研磨組成物的配製 夕中各實&例及比較例之研磨組成物係依後述 之步驟配製而得。 “先在4器中添加如純水或去離子水，接著添加研磨 力再冰加pH穩定劑，之後視需要添加調整劑將 組成物之pH值調整·至力 主在10左右。此外’可視需要添加螯 合劑及界面活性劑，最後才添加研磨粒子。前述每一配製 步驟皆於均勾混合各成分後進行。 籲测试例使用所配製之研磨組成物進行晶圓拋光 在此實例中’係使用搭載型號為SubA600之拋光墊 的研磨機（SECULAR Xj_36) ’研磨6吋晶圓，該拋光機係 具有四個研磨頭’每個研磨頭可承載三片6吋晶圓。研磨 過程中’該拋光機的載盤盤面溫度為31至34。〇，轉速為 50 RPM，研磨頭壓力為0 l2Mpa，研磨組成物漿液之流速 為8L/min。開始拋光後，每小時紀錄晶圓的厚度變化及以 肉眼觀察拋光墊顏色，當拋光墊轉變為黃褐色時，即認定 為拋光塾壽命終點。此外，拋光用之研磨組成物漿液係持 7 111700 201211219 續回收使用直到拋光墊壽命終點。 在本發明中，拋光速度衰退百分比的計算係將第一小 時(A)與最後一小時(B)之拋光速度差值除以第一小時的拋 光速度(A)而得，如下式所示。 拋光速度衰退=[(A-B/A)] * 100% 拋光墊總移除量為所有晶圓被研磨去除的厚度總和。 表一研磨組成物之成份 比較例1 比較例2 實施例1 實施例2 研磨粒子 二氧化石夕 100 100 100 100 pH穩定劑 蝴酸 - - 14.71 - 單乙醇胺 - - - 27.7 研磨加速劑 TMAH 23.33 11.67 23.99 17.36 pH調整劑 磷酸 9.17 9.17 5.97 氫氧化鉀 - 10.00 - - 螯合劑 NTA - - 5.97 SEQ7G - 20 鋒 界面活性劑 DP7530 - 0.18 0.17 拋光速度衰退 59% 65% 39% 21% 拋光移除量 1238μηι 1255μπι 1382μηι 1708μηι TMAH: Tetramethylammonium hydroxide ;氫氧化四甲銨。 NTA: Nitrilotriacetate ;硝基三乙酸醋。 DP7530: PO/EO copolymer。 L S 1 111700 201211219 • SEQ7G:陰離子型分散螫合劑（台界化學工業股份有限公 . 司）。 pH調整劑：視需要添加主要是將組成物之pH值調整至在 10左右。 表一中，pH穩定劑、研磨加速劑、pH調整劑、螯合 劑及界面活性劑的含量係以佔二氧化矽含量（丨〇〇重量份) 為基準計算。 鲁 用於本測試例之研磨組成物，係再經加水配製成含 lwt%之固含量的狀態而後使用。通常，用於研磨之研磨組 成物’其固含量範圍約介於0.5至2〇wt% 。 由上表一結果可知，以不含pH穩定劑之研磨組成物 漿液拋光晶圓，拋光速度衰退相當嚴重，而使用含有pH 穩定劑之本發明的研磨組成物拋光晶圓，可大幅降低抛光 塾拋^速度之衰退’維持拋光研磨品質，且在拋光墊壽命 鲁、、冬了則可移除較多的晶圓厚度，亦即明顯提升拋光塾之壽 命。 述貫施例僅例示性說明本發明之原理及其功效，市 非用於限制本發明。任何熟習此項技藝之人士均可 背本發明之精神及範疇下， > 31 變。因此，舉凡所屬技術領域;/有 t發明所揭示之精神與技術思想下二 或改變，仍應由後述之申請專利範圍所涵蓋。 4 Π1700 9 201211219 【圖式簡單說明】 备〇 【主要元件符號說明】201211219 • VI. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to an abrasive composition for rough-wafer wafers, and more particularly to an abrasive composition for rough-wafer wafers that slows polishing degradation. [Prior Art] In the semiconductor industry, the germanium wafer substrate must be processed into a flat surface before it can be used as an integrated circuit device (IC Device). In general, the polishing method for flattening the surface of the tantalum wafer is to place the wafer on a rotary polishing machine equipped with a polishing pad (Pad), and apply a polishing slurry containing submicron particles on the surface of the wafer. To achieve the effect of flattening. The chemical mechanical polishing (C Μ P) procedure is the final procedure in the fabrication of wafers to reduce the micro-roughness of the wafer surface to planarize the wafer surface and remove physical surface defects such as micro-to-marks and depressions. various. After the wafer is polished, they have a mirror surface with low surface defects. The CMP process used to polish the wafer is typically performed in two or more steps. The rough polishing wafer step φ is a polishing step that requires a high polishing speed to remove deep scratches on the wafer surface. However, by-products generated during polishing may cause the abrasive particles such as silica dioxide to lose their suspending ability, and the instantaneous gelation adheres to the surface of the polishing pad, so that the polishing ability is lowered, and the above problem is more serious when the polishing speed is increased. In addition, U.S. Patent No. 7,253,111 discloses a polishing solution for polishing a barrier which uses EDTA or citric acid to slow the yellowing of the polishing solution. In addition, U.S. Patent No. 6,509,269 discloses a polishing solution containing a nonionic surfactant to slow the glazing of the polishing pad, whereas the polishing solution is used for aluminum or aluminum alloy 111700 3 201211219 Flattening, not for rough throwing of wafers. It is a problem that is currently being solved by how to develop a polishing composition for rough polishing wafers and reduce the polishing rate of the polishing pad to maintain the polishing quality and improve the life of the polishing pad. SUMMARY OF THE INVENTION To achieve the above and other objects, the present invention provides an abrasive composition for a rough-wafer wafer comprising: (A) abrasive particles having an average particle diameter of 5 to 150 nm; (B) pH a stabilizer having a pKa value of from 9 to 10, and the pH stabilizer is present in an amount of from 7 to 28% by weight of the abrasive particles; (C) a grinding accelerator; and (D) water. The abrasive particles of the present invention are selected from one or more of the group consisting of cerium oxide, lanthanum oxide, titanium dioxide, cerium oxide and cerium oxide, and the use of abrasive particles having a small average particle size distribution is advantageous for lifting. Polishing speed. In the abrasive composition for rough polishing wafer of the present invention, the pH stabilizer may be selected from one or more of the group consisting of alkanolamines, inorganic acids and organic acids. The dahlia alcohol amine may be selected from one or more of the group consisting of monoethanolamine, diethanolamine and triethanolamine, and the mineral acid may be boric acid. In addition, in order to effectively provide a faster polishing speed, the polishing composition for rough polishing wafer of the present invention comprises a polishing accelerator, which may be selected from the group consisting of piperazine, piperene salt, and hydrogen hydroxide. One or more of the group consisting of tetramethylammonium hydroxide and tetraammonium hydroxide hydride and the content of the grinding accelerator is 11% of the grinding E g 2 4 111700 201211219 particles to the curry of the present invention (4) The wafer of the wafer may further include a pH adjusting agent selected from the group consisting of sodium hydroxide, hydrogen, '' and sulfuric acid, hydrogen acid or scaly acid, pH adjusting agent added as needed, and pH adjustment of the composition It is around 10. In another aspect, the polishing composition for rough polishing wafer of the present invention may comprise an S mixture and a surfactant, the content of the s mixture being 5.9 i 2 Gwt% of the estimated abrasive particles. (4) 0.16 to 18.18wt% of the abrasive particles. The polishing composition of the invention is used for rough polishing wafers, can effectively reduce the gelation of the abrasive particles and by-products in the polishing process, and adhere to the polishing pad, and can maintain the polishing quality while improving the polishing speed, and The performance of the polishing pad is improved by the discoloration of the polishing pad, and the performance and the life of the polishing pad are improved. [Embodiment] Hereinafter, embodiments of the present invention will be described by way of specific embodiments. Those skilled in the art can easily understand the present invention from the contents disclosed in the present specification. Advantages and Effects of the Invention The present invention may be embodied or applied by other different embodiments. The details of the present specification may also be based on different viewpoints and applications, and may be different without departing from the spirit of the present invention. Modifications and Modifications The present invention provides an abrasive composition for rough polishing wafers comprising: (A) abrasive particles having an average particle size of from 5 to 150 nanometers; (B) pH stabilizers whose pKa values are interposed 9 to 10, and the content of the pH stabilizer is 7 to 28% by weight of the abrasive particles; (C) a grinding accelerator; and (D) water. The abrasive particles of the present invention are selected. Cerium Oxide, Al2O3, II 5 111700 201211219 Emulsified Qin: cerium oxide and dioxins constitute a fresh group of 0 species or more, and the use of flat (9) 彳! small particles of abrasive particles is conducive to improve polishing speed. In the polishing composition for rough polishing wafer of the present invention, the pH stabilizer may be selected from the group consisting of (4) amines, inorganic acids and organic acids having a pKa value of 9 to 1 (). The alkaloids may be selected from the group consisting of monoethanolamine (pKa 9.5G), diethanolamine (pKa, 93) and triethanolamine (loud 9.8), and the group of species or multiple '(four) mineral acids Examples of such are shed acid (pKa 9.23). In the composition of the present invention, the addition of a stabilizer enables the pH of the composition of the present invention to be maintained at a threshold of 9 to (7) PH value of peracid and over-base can effectively reduce the gelation of the abrasive particles and by-products during polishing, and adhere to the polishing pad, and can maintain the polishing speed while maintaining the polishing speed, and delay the polishing and discoloration. The performance and life of the pad. In addition, in order to effectively provide a faster polishing speed, the hair The abrasive composition 16 for rough polishing wafers comprises a grinding acceleration, which can be selected from the group consisting of piperazine, piperazine salt, tetraammonium hydroxide and tetraammonium hydroxide. One or more of the group consisting of, and the grinding accelerator is contained in an amount of 11 to 35 wt% of the abrasive particles. The polishing composition for rough polishing wafer of the present invention further comprises a pH adjusting agent selected from the group consisting of Sodium hydroxide, potassium hydroxide, sulfuric acid, hydrogen acid or phosphoric acid, if necessary, the pH adjusting agent is mainly adjusted to adjust the pH of the composition to about 1 。. In another aspect, the present invention is used for coarse The abrasive composition of the polishing wafer may further comprise a chelating agent and a surfactant, and the chelating agent is present in an amount of from 0.16 to 〇18.8% by weight of the 5.9 to 2% by weight of the abrasive particles of the 111700 6 201211219. The sodium salt of acid is used as a chelating agent and a chelating agent. 'The content of surfactant is in the specific embodiment, the use of nitrogen-based triacetate, of course, can also be used directly using nitrogen triacetic acid as an example preparation example for the grinding of rough throwing wafers. In the preparation of the composition, the polishing composition of each of the examples and the comparative examples was prepared according to the procedure described later. "Firstly add pure water or deionized water to the 4th device, then add the grinding force and then add the pH stabilizer to the ice. Then add the adjusting agent as needed to adjust the pH value of the composition to the force of about 10. In addition, 'visual need The chelating agent and the surfactant are added, and finally the abrasive particles are added. Each of the above preparation steps is carried out after the components are uniformly mixed. The test example uses the prepared polishing composition for wafer polishing. In this example, the system is used. Grinding machine with model SubA600 polishing pad (SECULAR Xj_36) 'Grinding 6-inch wafer with four polishing heads' each polishing head can carry three 6-inch wafers. During polishing The tray surface temperature of the machine is 31 to 34. 〇, the rotation speed is 50 RPM, the head pressure is 0 l2Mpa, and the flow rate of the polishing composition slurry is 8L/min. After the polishing is started, the thickness variation of the wafer is recorded every hour. The color of the polishing pad was visually observed. When the polishing pad was changed to a tan, it was recognized as the end point of the polishing crucible. In addition, the polishing composition for polishing was held at 7 111700 201211219. To the end of the life of the polishing pad. In the present invention, the percentage of polishing rate decay is calculated by dividing the difference between the polishing speed of the first hour (A) and the last hour (B) by the polishing rate (A) of the first hour. , as shown in the following formula: Polishing speed decay = [(AB / A)] * 100% The total removal amount of the polishing pad is the sum of the thicknesses of all the wafers removed by grinding. Table 1 Composition of the polishing composition Comparative Example 1 Comparative Example 2 Example 1 Example 2 Abrasive Particles Sebolite Xi 100 100 100 100 pH Stabilizer Butyric Acid - - 14.71 - Monoethanolamine - - - 27.7 Grinding Accelerator TMAH 23.33 11.67 23.99 17.36 pH Adjuster Phosphoric Acid 9.17 9.17 5.97 Potassium Hydroxide - 10.00 - - Chelating agent NTA - - 5.97 SEQ7G - 20 Front surfactant DP7530 - 0.18 0.17 Polishing rate decay 59% 65% 39% 21% Polishing removal 1238μηι 1255μπι 1382μηι 1708μηι TMAH: Tetramethylammonium hydroxide; Tetramethylammonium hydroxide. NTA: Nitrilotriacetate; Nitrotriacetic acid vinegar. DP7530: PO/EO copolymer. LS 1 111700 201211219 • SEQ7G: Anionic dispersing chelating agent (Taiwan Chemical Industry Co., Ltd. Limited). pH adjuster: Adding as needed mainly adjusts the pH of the composition to around 10. In Table 1, the contents of the pH stabilizer, the polishing accelerator, the pH adjuster, the chelating agent, and the surfactant are calculated based on the cerium oxide content (parts by weight). Lu The polishing composition used in this test example was further prepared by adding water to a solid content of 1 wt%. Generally, the abrasive composition used for grinding' has a solids content ranging from about 0.5 to 2% by weight. As can be seen from the results in the above Table 1, polishing the wafer with the slurry of the polishing composition without the pH stabilizer, the polishing rate is deteriorated quite seriously, and polishing the wafer using the polishing composition of the present invention containing the pH stabilizer can greatly reduce the polishing 塾The decay of the throwing speed maintains the polishing quality, and the polishing pad has a long life, and in winter, more wafer thickness can be removed, which significantly increases the life of the polishing pad. The examples are merely illustrative of the principles of the invention and its efficacy, and are not intended to limit the invention. Anyone skilled in the art can recite the spirit and scope of the present invention. Therefore, the technical and technical aspects of the invention may be covered by the scope of the patent application described below. 4 Π1700 9 201211219 [Simple description of the diagram] 〇 [Main component symbol description]
Claims (1)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW099130989A TWI465556B (en) | 2010-09-14 | 2010-09-14 | Polishing composition for primary polishing of wafer |
| CN201110147901XA CN102399496A (en) | 2010-09-14 | 2011-05-25 | Abrasive composition for rough polishing of wafers |
| KR1020110063626A KR101189206B1 (en) | 2010-09-14 | 2011-06-29 | Polishing composition for primary polishing of wafer |
| JP2011187674A JP2012064938A (en) | 2010-09-14 | 2011-08-30 | Abrasive composition used in wafer rough polishing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW099130989A TWI465556B (en) | 2010-09-14 | 2010-09-14 | Polishing composition for primary polishing of wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201211219A true TW201211219A (en) | 2012-03-16 |
| TWI465556B TWI465556B (en) | 2014-12-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099130989A TWI465556B (en) | 2010-09-14 | 2010-09-14 | Polishing composition for primary polishing of wafer |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2012064938A (en) |
| KR (1) | KR101189206B1 (en) |
| CN (1) | CN102399496A (en) |
| TW (1) | TWI465556B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2755854A1 (en) * | 2009-03-17 | 2010-09-23 | Dow Global Technologies Llc | Curable compositions containing cyclic diamine and cured products therefrom |
| CN102766408B (en) * | 2012-06-28 | 2014-05-28 | 深圳市力合材料有限公司 | Silicon wafer refined polishing composition liquid applicable to low pressure and preparation method thereof |
| US8801959B1 (en) * | 2013-04-11 | 2014-08-12 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stable, concentratable silicon wafer polishing composition and related methods |
| US8795548B1 (en) * | 2013-04-11 | 2014-08-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Silicon wafer polishing composition and related methods |
| KR20200109549A (en) | 2019-03-13 | 2020-09-23 | 삼성전자주식회사 | Polishing slurry and method of manufacturing semiconductor device |
| EP4279561A1 (en) * | 2021-01-18 | 2023-11-22 | Fujimi Incorporated | Polishing composition |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6533832B2 (en) * | 1998-06-26 | 2003-03-18 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry and method for using same |
| US6492308B1 (en) * | 1999-11-16 | 2002-12-10 | Esc, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
| KR100516884B1 (en) | 2002-12-09 | 2005-09-23 | 제일모직주식회사 | Slurry Composition for Final Polishing of Silicon Wafer |
| US7153335B2 (en) * | 2003-10-10 | 2006-12-26 | Dupont Air Products Nanomaterials Llc | Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole |
| US20050079803A1 (en) * | 2003-10-10 | 2005-04-14 | Siddiqui Junaid Ahmed | Chemical-mechanical planarization composition having PVNO and associated method for use |
| KR100660767B1 (en) | 2005-05-23 | 2006-12-22 | 제일모직주식회사 | Chemical mechanical polishing slurry for polishing Poly-Silicon film and method for producing thereof |
| JP2007300070A (en) * | 2006-04-05 | 2007-11-15 | Nippon Chem Ind Co Ltd | Etchant composition for polishing semiconductor wafer, manufacturing method of polishing composition using same, and polishing method |
| JP2008124222A (en) * | 2006-11-10 | 2008-05-29 | Fujifilm Corp | Polishing solution |
| US20080149884A1 (en) * | 2006-12-21 | 2008-06-26 | Junaid Ahmed Siddiqui | Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing |
| JP2009231486A (en) * | 2008-03-21 | 2009-10-08 | Kao Corp | Polishing liquid composition for silicon wafer |
-
2010
- 2010-09-14 TW TW099130989A patent/TWI465556B/en active
-
2011
- 2011-05-25 CN CN201110147901XA patent/CN102399496A/en active Pending
- 2011-06-29 KR KR1020110063626A patent/KR101189206B1/en not_active IP Right Cessation
- 2011-08-30 JP JP2011187674A patent/JP2012064938A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR20120028209A (en) | 2012-03-22 |
| CN102399496A (en) | 2012-04-04 |
| TWI465556B (en) | 2014-12-21 |
| KR101189206B1 (en) | 2012-10-09 |
| JP2012064938A (en) | 2012-03-29 |
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