JP2004527972A - 所定の層の厚さ特性を有する層の製造方法 - Google Patents

所定の層の厚さ特性を有する層の製造方法 Download PDF

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Publication number
JP2004527972A
JP2004527972A JP2002591547A JP2002591547A JP2004527972A JP 2004527972 A JP2004527972 A JP 2004527972A JP 2002591547 A JP2002591547 A JP 2002591547A JP 2002591547 A JP2002591547 A JP 2002591547A JP 2004527972 A JP2004527972 A JP 2004527972A
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JP
Japan
Prior art keywords
layer
ion beam
resonance circuit
locally
shape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002591547A
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English (en)
Japanese (ja)
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JP2004527972A5 (enExample
Inventor
アイグナー，ローベルト
マークシュタイナー，シュテファン
ネスラー，ヴィンフリート
エルブレヒト，リューダー
ヨルク ティメ，ハンス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of JP2004527972A publication Critical patent/JP2004527972A/ja
Publication of JP2004527972A5 publication Critical patent/JP2004527972A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • C23C14/5833—Ion beam bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5873—Removal of material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
    • H01C17/24—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material
    • H01C17/2404—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material by charged particle impact, e.g. by electron or ion beam milling, sputtering, plasma etching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Powder Metallurgy (AREA)
JP2002591547A 2001-05-22 2001-05-22 所定の層の厚さ特性を有する層の製造方法 Pending JP2004527972A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2001/005889 WO2002095085A1 (de) 2001-05-22 2001-05-22 Frequenzabgleich für bulk-acoustic-wave resonatoren durch lokales ionenstrahlätzen

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007041493A Division JP2007209000A (ja) 2007-02-21 2007-02-21 所定の層の厚さ特性を有する層の製造方法

Publications (2)

Publication Number Publication Date
JP2004527972A true JP2004527972A (ja) 2004-09-09
JP2004527972A5 JP2004527972A5 (enExample) 2006-10-12

Family

ID=8164429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002591547A Pending JP2004527972A (ja) 2001-05-22 2001-05-22 所定の層の厚さ特性を有する層の製造方法

Country Status (6)

Country Link
US (1) US20040212459A1 (enExample)
EP (2) EP1816233B1 (enExample)
JP (1) JP2004527972A (enExample)
KR (1) KR20040005977A (enExample)
DE (2) DE50112976D1 (enExample)
WO (1) WO2002095085A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004054895B4 (de) * 2004-11-12 2007-04-19 Infineon Technologies Ag Dünnschicht-BAW-Filter sowie Verfahren zur Herstellung eines Dünnschicht-BAW-Filters
JP2008098528A (ja) * 2006-10-13 2008-04-24 Toshiba Corp 半導体装置の製造方法
US7535324B2 (en) * 2007-06-15 2009-05-19 Avago Technologies Wireless Ip, Pte. Ltd. Piezoelectric resonator structure and method for manufacturing a coupled resonator device
FR2941878B1 (fr) * 2009-02-10 2011-05-06 Quertech Ingenierie Procede de traitement par un faisceau d'ions d'une couche metallique deposee sur un substrat
US8479363B2 (en) * 2010-05-11 2013-07-09 Hao Zhang Methods for wafer level trimming of acoustically coupled resonator filter
JP6719178B2 (ja) * 2015-05-22 2020-07-08 エスアイアイ・クリスタルテクノロジー株式会社 圧電振動片の製造方法及び圧電振動子の製造方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2877338A (en) * 1954-10-22 1959-03-10 James Knights Company Method of adjusting the operating frequency of sealed piezoelectric crystals
US3699334A (en) * 1969-06-16 1972-10-17 Kollsman Instr Corp Apparatus using a beam of positive ions for controlled erosion of surfaces
FR2354617A1 (fr) * 1976-06-08 1978-01-06 Electro Resistance Procede pour la fabrication de resistances electriques a partir de feuilles ou de films metalliques et resistances obtenues
JPS58106750A (ja) * 1981-12-18 1983-06-25 Toshiba Corp フオ−カスイオンビ−ム加工方法
JPS6042832A (ja) * 1983-08-18 1985-03-07 Matsushita Electric Ind Co Ltd イオンビ−ム装置
JPS61137327A (ja) * 1984-12-10 1986-06-25 Nec Corp 層間絶縁膜のエツチング方法
EP0203573B1 (en) * 1985-05-28 1993-08-11 Rikagaku Kenkyusho Electron beam-excited ion beam source
JP2713923B2 (ja) * 1987-10-07 1998-02-16 株式会社日立製作所 集束イオンビームを用いたデバイス加工方法
JPH04196610A (ja) * 1990-11-26 1992-07-16 Seiko Epson Corp 圧電振動子の周波数調整方法
US5266529A (en) * 1991-10-21 1993-11-30 Trw Inc. Focused ion beam for thin film resistor trim on aluminum nitride substrates
JPH0773834A (ja) * 1993-08-31 1995-03-17 Nippon Steel Corp 透過電子顕微鏡用薄膜試料作製方法
US5876860A (en) * 1997-12-09 1999-03-02 N.V. Interturbine Thermal barrier coating ceramic structure
JP3473538B2 (ja) * 1999-05-14 2003-12-08 株式会社村田製作所 圧電部品の周波数調整装置及び周波数調整方法
US6529311B1 (en) * 1999-10-28 2003-03-04 The Trustees Of Boston University MEMS-based spatial-light modulator with integrated electronics
US6307447B1 (en) * 1999-11-01 2001-10-23 Agere Systems Guardian Corp. Tuning mechanical resonators for electrical filter
US6537606B2 (en) * 2000-07-10 2003-03-25 Epion Corporation System and method for improving thin films by gas cluster ion beam processing
US6456173B1 (en) * 2001-02-15 2002-09-24 Nokia Mobile Phones Ltd. Method and system for wafer-level tuning of bulk acoustic wave resonators and filters
US6456011B1 (en) * 2001-02-23 2002-09-24 Front Range Fakel, Inc. Magnetic field for small closed-drift ion source
US6874211B2 (en) * 2001-03-05 2005-04-05 Agilent Technologies, Inc. Method for producing thin film bulk acoustic resonators (FBARs) with different frequencies on the same substrate by subtracting method and apparatus embodying the method
US6441702B1 (en) * 2001-04-27 2002-08-27 Nokia Mobile Phones Ltd. Method and system for wafer-level tuning of bulk acoustic wave resonators and filters

Also Published As

Publication number Publication date
DE50114591D1 (de) 2009-01-29
EP1390559B1 (de) 2007-09-05
EP1816233A3 (de) 2007-08-22
DE50112976D1 (de) 2007-10-18
US20040212459A1 (en) 2004-10-28
EP1816233B1 (de) 2008-12-17
KR20040005977A (ko) 2004-01-16
WO2002095085A1 (de) 2002-11-28
WO2002095085A8 (de) 2002-12-19
EP1816233A2 (de) 2007-08-08
EP1390559A1 (de) 2004-02-25

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