WO2002095085A1 - Frequenzabgleich für bulk-acoustic-wave resonatoren durch lokales ionenstrahlätzen - Google Patents

Frequenzabgleich für bulk-acoustic-wave resonatoren durch lokales ionenstrahlätzen Download PDF

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Publication number
WO2002095085A1
WO2002095085A1 PCT/EP2001/005889 EP0105889W WO02095085A1 WO 2002095085 A1 WO2002095085 A1 WO 2002095085A1 EP 0105889 W EP0105889 W EP 0105889W WO 02095085 A1 WO02095085 A1 WO 02095085A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
ion beam
profile
thickness profile
guided
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2001/005889
Other languages
German (de)
English (en)
French (fr)
Other versions
WO2002095085A8 (de
Inventor
Robert Aigner
Stephan Marksteiner
Winfried Nessler
Lüder ELBRECHT
Hans-Jörg TIMME
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to JP2002591547A priority Critical patent/JP2004527972A/ja
Priority to EP07008531A priority patent/EP1816233B1/de
Priority to EP01962685A priority patent/EP1390559B1/de
Priority to PCT/EP2001/005889 priority patent/WO2002095085A1/de
Priority to DE50112976T priority patent/DE50112976D1/de
Priority to DE50114591T priority patent/DE50114591D1/de
Priority to KR10-2003-7015186A priority patent/KR20040005977A/ko
Priority to US10/478,751 priority patent/US20040212459A1/en
Publication of WO2002095085A1 publication Critical patent/WO2002095085A1/de
Publication of WO2002095085A8 publication Critical patent/WO2002095085A8/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • C23C14/5833—Ion beam bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5873—Removal of material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
    • H01C17/24—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material
    • H01C17/2404—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material by charged particle impact, e.g. by electron or ion beam milling, sputtering, plasma etching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency

Definitions

  • CD cn SD ö co T3 S "cn cn? C ⁇ DM ⁇ tr ö cn ⁇ - • o C ⁇ ö ⁇ t. O ⁇ H- rt P- • ⁇ O 0 n * ⁇ H- CD CD CD CD CD cn ⁇ - ⁇ d 0 CD
  • CD SD d »3 t. CD ⁇ P- 0. ⁇ cn H, CD CD rt d CD • fl 3 CD ⁇ . 3 d 3 3 SD 3 0 nd CD M tr o »H 1 t. ⁇ - 3 3 H LQ
  • the present invention is therefore based on the object of providing a method for producing a layer with a locally adapted or predetermined layer thickness profile which reduces or completely avoids the difficulties mentioned.
  • the object of the present invention is to provide a method which can be used to set the natural frequencies of piezoelectric resonant circuits.
  • a method for producing a layer with a locally adapted or predetermined layer thickness profile comprises the following steps:
  • At least one ion beam is guided over the layer at least once, so that a local etching of the layer takes place at the location of the ion beam in accordance with the removal profile and a layer is produced with a locally adapted or predetermined layer thickness profile.
  • the method according to the invention has the advantage that both random fluctuations from wafer to wafer and systematic fluctuations between the center of the wafer and the edge of the wafer can be corrected.
  • the method according to the invention allows a cost-efficient correction of these fluctuations with comparatively simple equipment.
  • the method according to the invention can be used to produce layers with areas of different thickness.
  • the method according to the invention has the additional advantage that it can be used universally for any layer materials and layer thicknesses.
  • the method according to the invention can be used several times if the removal profile could not be achieved in the first attempt.
  • the layer is preferably processed over the entire wafer, the method according to the invention being adapted to the requirements which are specified by industrial mass production, for example in terms of throughput.
  • the processing time of the method according to the invention is in the range between 1 and 60 minutes.
  • the method according to the invention is used to set the natural frequencies of piezoelectric resonant circuits.
  • a method is obtained which allows a direct influence on the natural frequency.
  • the procedure can be used before, during and after the completion of the vibrating stack.
  • the inventive method has the advantage that a
  • Frequency adjustment are carried out at the wafer level and that the natural frequencies of piezoelectric resonant circuits can be set over a large trim range of up to 20%.
  • the extension of the ion beam is greater than 1 mm, JL to to ⁇ > in O in o in o in
  • N tr SD ⁇ CD ⁇ - ⁇ tr P- ⁇ rt ⁇ sx ⁇ ⁇ ⁇ tr N 3 cn rt ⁇ ⁇ tr Mi SD dz N rt P- Mi ⁇ P- cn 0 d tr SD CO M rt d SD P 3 3 0 ⁇
  • FIGS. 7-8 a further embodiment of the method according to the invention.
  • this layer structure typically has a thickness of approximately 5 ⁇ m.
  • other acoustically insulating substructures such as acoustic mirrors, can also be used.
  • the upper electrode layer 7 was produced with a locally adapted thickness profile. In the present example, this means that the upper electrode layer 7 in the region of the piezoelectric resonant circuit directly above the piezo layer 6 is made significantly thinner than in the other regions.
  • the thickness profile of the upper electrode layer 7 shown in FIG. 1 was generated in accordance with a method according to the invention.
  • FIGS. 2 to 4 show an embodiment of the method according to the invention using the example of the piezoelectric resonator shown in FIG. 1.
  • the starting point is the structure shown in FIG. 2, which corresponds to a piezoelectric resonant circuit without an upper electrode layer 7.
  • the structure shown in FIG. 2 thus acts as a type of substrate for the subsequent deposition of the upper electrode layer 7.
  • a relatively thick metal layer for example a tungsten layer, is then produced by a sputtering process.
  • a sputtering process instead of a sputtering process, a CVD process or an electrochemical process can also be used.
  • the removal profile for the metal is determined. In the present example, this determination is made at the location of the resonant circuit by measuring the natural frequency of the resonant circuit.
  • N SD ⁇ P ⁇ - ⁇ PX o X dd P P- co ⁇ ⁇ X o • * ⁇ ⁇ - d rt 3 rt LQ z 3 ⁇ d ⁇ 0 LQ 3 P- 0 'P 3 ⁇ ⁇ tr 3 ⁇ 3 P rt o P ⁇ P ⁇ 'Tl ⁇ ⁇ ⁇ ⁇ Ml ⁇ Ul ⁇ 3 ⁇ SX 3 P ⁇ tr LQ ⁇ s.
  • Resistance values are to be generated.
  • a lacquer layer is therefore subsequently applied and developed, so that a lacquer mask 12 is created which is open at the points at which the resistors 13 are to be produced with a first resistance value.
  • An ion beam etching then takes place, which carries out an etching in accordance with the predetermined removal profile with an ion beam 9 at the open locations of the resist mask 12. All other areas of the layer 11 are protected by the resist mask 12 (FIG. 7).
  • the resist mask 12 is removed and a further resist layer is applied and developed, so that a further resist mask 14 is created, which is open at the points at which the resistors 15 are to be generated with a second resistance value.
  • ion beam etching which carries out an etching at the open locations of the resist mask 14 in accordance with the specified removal profile. All other areas of layer 11 are protected by the resist mask 14 (FIG. 8). After removal of the resist mask 14, a layer 11 is thus obtained with a layer thickness profile which is locally adapted to the respective resistance.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Powder Metallurgy (AREA)
PCT/EP2001/005889 2001-05-22 2001-05-22 Frequenzabgleich für bulk-acoustic-wave resonatoren durch lokales ionenstrahlätzen Ceased WO2002095085A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2002591547A JP2004527972A (ja) 2001-05-22 2001-05-22 所定の層の厚さ特性を有する層の製造方法
EP07008531A EP1816233B1 (de) 2001-05-22 2001-05-22 Verfahren zur Herstellung einer Schicht mit einem vorgegebenen Schichtdickenprofil
EP01962685A EP1390559B1 (de) 2001-05-22 2001-05-22 Verfahren zur herstellung einer schicht mit einem vordefinierten schichtdickenprofil
PCT/EP2001/005889 WO2002095085A1 (de) 2001-05-22 2001-05-22 Frequenzabgleich für bulk-acoustic-wave resonatoren durch lokales ionenstrahlätzen
DE50112976T DE50112976D1 (de) 2001-05-22 2001-05-22 Verfahren zur herstellung einer schicht mit einem vordefinierten schichtdickenprofil
DE50114591T DE50114591D1 (de) 2001-05-22 2001-05-22 Verfahren zur Herstellung einer Schicht mit einem vorgegebenen Schichtdickenprofil
KR10-2003-7015186A KR20040005977A (ko) 2001-05-22 2001-05-22 미리 규정된 층 두께 프로파일을 가진 층의 제조 방법
US10/478,751 US20040212459A1 (en) 2001-05-22 2001-05-22 Method for producing a layer with a predefined layer thickness profile

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2001/005889 WO2002095085A1 (de) 2001-05-22 2001-05-22 Frequenzabgleich für bulk-acoustic-wave resonatoren durch lokales ionenstrahlätzen

Publications (2)

Publication Number Publication Date
WO2002095085A1 true WO2002095085A1 (de) 2002-11-28
WO2002095085A8 WO2002095085A8 (de) 2002-12-19

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ID=8164429

Family Applications (1)

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PCT/EP2001/005889 Ceased WO2002095085A1 (de) 2001-05-22 2001-05-22 Frequenzabgleich für bulk-acoustic-wave resonatoren durch lokales ionenstrahlätzen

Country Status (6)

Country Link
US (1) US20040212459A1 (enExample)
EP (2) EP1816233B1 (enExample)
JP (1) JP2004527972A (enExample)
KR (1) KR20040005977A (enExample)
DE (2) DE50112976D1 (enExample)
WO (1) WO2002095085A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7535324B2 (en) 2007-06-15 2009-05-19 Avago Technologies Wireless Ip, Pte. Ltd. Piezoelectric resonator structure and method for manufacturing a coupled resonator device
FR2941878A1 (fr) * 2009-02-10 2010-08-13 Quertech Ingenierie Procede de traitement par un faisceau d'ions d'une couche metallique deposee sur un substrat
US7825747B2 (en) 2004-11-12 2010-11-02 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Thin-film BAW filter, and a method for production of a thin-film BAW filter

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008098528A (ja) * 2006-10-13 2008-04-24 Toshiba Corp 半導体装置の製造方法
US8479363B2 (en) * 2010-05-11 2013-07-09 Hao Zhang Methods for wafer level trimming of acoustically coupled resonator filter
JP6719178B2 (ja) * 2015-05-22 2020-07-08 エスアイアイ・クリスタルテクノロジー株式会社 圧電振動片の製造方法及び圧電振動子の製造方法

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JPS6042832A (ja) * 1983-08-18 1985-03-07 Matsushita Electric Ind Co Ltd イオンビ−ム装置
JPS61137327A (ja) * 1984-12-10 1986-06-25 Nec Corp 層間絶縁膜のエツチング方法
JPH04196610A (ja) * 1990-11-26 1992-07-16 Seiko Epson Corp 圧電振動子の周波数調整方法
US5266529A (en) * 1991-10-21 1993-11-30 Trw Inc. Focused ion beam for thin film resistor trim on aluminum nitride substrates
JPH0773834A (ja) * 1993-08-31 1995-03-17 Nippon Steel Corp 透過電子顕微鏡用薄膜試料作製方法

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US4075452A (en) * 1976-06-08 1978-02-21 Societe Francaise De L'electro-Resistance Electroresistor and method of making same
US4457803A (en) * 1981-12-18 1984-07-03 Tokyo Shibaura Denki Kabushiki Kaisha Processing method using a focused ion beam
JPS6042832A (ja) * 1983-08-18 1985-03-07 Matsushita Electric Ind Co Ltd イオンビ−ム装置
JPS61137327A (ja) * 1984-12-10 1986-06-25 Nec Corp 層間絶縁膜のエツチング方法
JPH04196610A (ja) * 1990-11-26 1992-07-16 Seiko Epson Corp 圧電振動子の周波数調整方法
US5266529A (en) * 1991-10-21 1993-11-30 Trw Inc. Focused ion beam for thin film resistor trim on aluminum nitride substrates
JPH0773834A (ja) * 1993-08-31 1995-03-17 Nippon Steel Corp 透過電子顕微鏡用薄膜試料作製方法

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7825747B2 (en) 2004-11-12 2010-11-02 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Thin-film BAW filter, and a method for production of a thin-film BAW filter
US7535324B2 (en) 2007-06-15 2009-05-19 Avago Technologies Wireless Ip, Pte. Ltd. Piezoelectric resonator structure and method for manufacturing a coupled resonator device
FR2941878A1 (fr) * 2009-02-10 2010-08-13 Quertech Ingenierie Procede de traitement par un faisceau d'ions d'une couche metallique deposee sur un substrat
WO2010092297A1 (fr) * 2009-02-10 2010-08-19 Quertech Ingenierie Procede de traitement par un faisceau d'ions d'une couche metallique deposee sur un substrat
CN102362006A (zh) * 2009-02-10 2012-02-22 夸泰克工程公司 沉淀基板上的金属层的离子束处理方法
CN102362006B (zh) * 2009-02-10 2014-01-01 夸泰克工程公司 沉淀基板上的金属层的离子束处理方法
EP2396447B1 (fr) * 2009-02-10 2018-10-31 Quertech Procede de traitement par un faisceau d'ions d'une couche metallique deposee sur un substrat et substrat obtenu

Also Published As

Publication number Publication date
DE50114591D1 (de) 2009-01-29
EP1390559B1 (de) 2007-09-05
EP1816233A3 (de) 2007-08-22
DE50112976D1 (de) 2007-10-18
US20040212459A1 (en) 2004-10-28
JP2004527972A (ja) 2004-09-09
EP1816233B1 (de) 2008-12-17
KR20040005977A (ko) 2004-01-16
WO2002095085A8 (de) 2002-12-19
EP1816233A2 (de) 2007-08-08
EP1390559A1 (de) 2004-02-25

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