JP2004526984A5 - - Google Patents

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Publication number
JP2004526984A5
JP2004526984A5 JP2002548218A JP2002548218A JP2004526984A5 JP 2004526984 A5 JP2004526984 A5 JP 2004526984A5 JP 2002548218 A JP2002548218 A JP 2002548218A JP 2002548218 A JP2002548218 A JP 2002548218A JP 2004526984 A5 JP2004526984 A5 JP 2004526984A5
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JP
Japan
Prior art keywords
cycloalkyl
substituted
alkyl
interrupted
oso
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JP2002548218A
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English (en)
Japanese (ja)
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JP4294317B2 (ja
JP2004526984A (ja
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Priority claimed from PCT/EP2001/013725 external-priority patent/WO2002046507A2/en
Publication of JP2004526984A publication Critical patent/JP2004526984A/ja
Publication of JP2004526984A5 publication Critical patent/JP2004526984A5/ja
Application granted granted Critical
Publication of JP4294317B2 publication Critical patent/JP4294317B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002548218A 2000-12-04 2001-11-26 オニウム塩及びその潜在的酸としての使用 Expired - Fee Related JP4294317B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP00811147 2000-12-04
EP01810551 2001-06-08
PCT/EP2001/013725 WO2002046507A2 (en) 2000-12-04 2001-11-26 Onium salts and the use therof as latent acids

Publications (3)

Publication Number Publication Date
JP2004526984A JP2004526984A (ja) 2004-09-02
JP2004526984A5 true JP2004526984A5 (cg-RX-API-DMAC10.html) 2008-05-15
JP4294317B2 JP4294317B2 (ja) 2009-07-08

Family

ID=26074087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002548218A Expired - Fee Related JP4294317B2 (ja) 2000-12-04 2001-11-26 オニウム塩及びその潜在的酸としての使用

Country Status (12)

Country Link
US (1) US6929896B2 (cg-RX-API-DMAC10.html)
EP (1) EP1344109B1 (cg-RX-API-DMAC10.html)
JP (1) JP4294317B2 (cg-RX-API-DMAC10.html)
KR (1) KR100862281B1 (cg-RX-API-DMAC10.html)
CN (1) CN100383665C (cg-RX-API-DMAC10.html)
AT (1) ATE394707T1 (cg-RX-API-DMAC10.html)
AU (1) AU2002227945A1 (cg-RX-API-DMAC10.html)
BR (1) BR0115944A (cg-RX-API-DMAC10.html)
CA (1) CA2428255C (cg-RX-API-DMAC10.html)
DE (1) DE60133929D1 (cg-RX-API-DMAC10.html)
MX (1) MXPA03004958A (cg-RX-API-DMAC10.html)
WO (1) WO2002046507A2 (cg-RX-API-DMAC10.html)

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US8018568B2 (en) 2006-10-12 2011-09-13 Cambrios Technologies Corporation Nanowire-based transparent conductors and applications thereof
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GB0623936D0 (en) * 2006-11-29 2007-01-10 Univ Strathclyde Polymers with transmission into the ultraviolet
KR101456838B1 (ko) 2007-04-20 2014-11-04 캄브리오스 테크놀로지즈 코포레이션 복합 투명 도전체 및 그 제조 방법
KR100908601B1 (ko) * 2007-06-05 2009-07-21 제일모직주식회사 반사방지 하드마스크 조성물 및 이를 이용한 기판상 재료의패턴화 방법
US9034556B2 (en) 2007-12-21 2015-05-19 Tokyo Ohka Kogyo Co., Ltd. Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern
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US8163461B2 (en) * 2008-04-09 2012-04-24 Cornell Research Foundation, Inc. Photoacid generator compounds and compositions
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JP5607044B2 (ja) * 2009-06-02 2014-10-15 山本化成株式会社 ヨードニウム系光重合開始剤、その製造方法およびこれを含有してなる光硬化性組成物
WO2011106438A1 (en) 2010-02-24 2011-09-01 Cambrios Technologies Corporation Nanowire-based transparent conductors and methods of patterning same
JP5521996B2 (ja) * 2010-11-19 2014-06-18 信越化学工業株式会社 スルホニウム塩を含む高分子化合物、レジスト材料及びパターン形成方法、並びにスルホニウム塩単量体及びその製造方法
US20140005301A1 (en) * 2011-02-23 2014-01-02 Basf Se Sulfonium sulfates, their preparation and use
JP2013129649A (ja) * 2011-11-22 2013-07-04 Central Glass Co Ltd 珪素化合物、縮合物およびそれを用いたレジスト組成物、ならびにそれを用いるパターン形成方法
JP2013148878A (ja) * 2011-12-19 2013-08-01 Sumitomo Chemical Co Ltd レジスト組成物
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JP6671381B2 (ja) 2015-02-02 2020-03-25 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se 潜在酸およびそれらの使用
JP6888669B2 (ja) * 2017-03-31 2021-06-16 ダイキン工業株式会社 アルキル硫酸エステル又はその塩
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