JP2004526575A5 - - Google Patents

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Publication number
JP2004526575A5
JP2004526575A5 JP2002560818A JP2002560818A JP2004526575A5 JP 2004526575 A5 JP2004526575 A5 JP 2004526575A5 JP 2002560818 A JP2002560818 A JP 2002560818A JP 2002560818 A JP2002560818 A JP 2002560818A JP 2004526575 A5 JP2004526575 A5 JP 2004526575A5
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JP
Japan
Prior art keywords
processing method
laser system
laser
laser processing
substrate material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002560818A
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English (en)
Japanese (ja)
Other versions
JP4634692B2 (ja
JP2004526575A (ja
Filing date
Publication date
Priority claimed from US09/803,382 external-priority patent/US20020033558A1/en
Application filed filed Critical
Priority claimed from PCT/US2002/000867 external-priority patent/WO2002060636A1/en
Publication of JP2004526575A publication Critical patent/JP2004526575A/ja
Publication of JP2004526575A5 publication Critical patent/JP2004526575A5/ja
Application granted granted Critical
Publication of JP4634692B2 publication Critical patent/JP4634692B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002560818A 2001-01-31 2002-01-10 レーザ処理方法 Expired - Fee Related JP4634692B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US26555601P 2001-01-31 2001-01-31
US09/803,382 US20020033558A1 (en) 2000-09-20 2001-03-09 UV laser cutting or shape modification of brittle, high melting temperature target materials such as ceramics or glasses
PCT/US2002/000867 WO2002060636A1 (en) 2001-01-31 2002-01-10 Ultraviolet laser ablative patterning of microstructures in semiconductors

Publications (3)

Publication Number Publication Date
JP2004526575A JP2004526575A (ja) 2004-09-02
JP2004526575A5 true JP2004526575A5 (zh) 2005-06-30
JP4634692B2 JP4634692B2 (ja) 2011-02-16

Family

ID=26951292

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002560818A Expired - Fee Related JP4634692B2 (ja) 2001-01-31 2002-01-10 レーザ処理方法

Country Status (7)

Country Link
EP (1) EP1365880A4 (zh)
JP (1) JP4634692B2 (zh)
CN (1) CN1301178C (zh)
CA (1) CA2436736A1 (zh)
GB (1) GB2389811B (zh)
TW (1) TW525240B (zh)
WO (1) WO2002060636A1 (zh)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6676878B2 (en) 2001-01-31 2004-01-13 Electro Scientific Industries, Inc. Laser segmented cutting
US6949449B2 (en) 2003-07-11 2005-09-27 Electro Scientific Industries, Inc. Method of forming a scribe line on a ceramic substrate
US7985942B2 (en) * 2004-05-28 2011-07-26 Electro Scientific Industries, Inc. Method of providing consistent quality of target material removal by lasers having different output performance characteristics
US20060108327A1 (en) * 2004-11-23 2006-05-25 Chng Kiong C Method of manufacturing a microstructure
DE102005042072A1 (de) * 2005-06-01 2006-12-14 Forschungsverbund Berlin E.V. Verfahren zur Erzeugung von vertikalen elektrischen Kontaktverbindungen in Halbleiterwafern
JP2007067082A (ja) * 2005-08-30 2007-03-15 Disco Abrasive Syst Ltd ウエーハの穿孔方法
DE102005042074A1 (de) 2005-08-31 2007-03-08 Forschungsverbund Berlin E.V. Verfahren zur Erzeugung von Durchkontaktierungen in Halbleiterwafern
US7767595B2 (en) * 2006-10-26 2010-08-03 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
CN101041415B (zh) * 2006-11-07 2010-08-11 东南大学 硅片上制作纳米孔的方法
JP2008155274A (ja) * 2006-12-26 2008-07-10 Disco Abrasive Syst Ltd ウエーハの加工方法
KR101041140B1 (ko) * 2009-03-25 2011-06-13 삼성모바일디스플레이주식회사 기판 절단 방법
CN101850981A (zh) * 2010-06-23 2010-10-06 东北林业大学 一种激光烧蚀制备氧化硅纳米泡沫的方法
JP5860219B2 (ja) * 2011-03-10 2016-02-16 株式会社ディスコ レーザー加工装置
TW201716167A (zh) * 2011-08-18 2017-05-16 奧寶科技有限公司 用於電路之檢測/維修/再檢測系統及雷射寫入系統
CN102956239A (zh) * 2011-08-29 2013-03-06 新科实业有限公司 磁头、磁头折片组合以及磁盘驱动单元
CN103567642B (zh) * 2012-08-08 2017-07-11 赛恩倍吉科技顾问（深圳）有限公司 蓝宝石切割装置
CN103962727B (zh) * 2013-01-28 2018-03-02 深圳市裕展精密科技有限公司 蓝宝石切割装置
US10118250B1 (en) 2017-09-15 2018-11-06 International Business Machines Corporation In-situ laser beam position and spot size sensor and high speed scanner calibration, wafer debonding method
CN108326435B (zh) * 2017-12-29 2022-08-30 大族激光科技产业集团股份有限公司 一种模具钢的激光打标方法
CN108637473B (zh) * 2018-06-05 2023-12-08 昆山宝锦激光拼焊有限公司 一种天窗板一次定位焊接成型的装置
CN108637472B (zh) * 2018-06-05 2023-12-08 昆山宝锦激光拼焊有限公司 一种天窗激光焊接线平台

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4473737A (en) * 1981-09-28 1984-09-25 General Electric Company Reverse laser drilling
US4534804A (en) * 1984-06-14 1985-08-13 International Business Machines Corporation Laser process for forming identically positioned alignment marks on the opposite sides of a semiconductor wafer
JP2621599B2 (ja) * 1990-07-05 1997-06-18 日本電気株式会社 コンタクトホール形成装置及び方法
US5611946A (en) * 1994-02-18 1997-03-18 New Wave Research Multi-wavelength laser system, probe station and laser cutter system using the same
US5841099A (en) * 1994-07-18 1998-11-24 Electro Scientific Industries, Inc. Method employing UV laser pulses of varied energy density to form depthwise self-limiting blind vias in multilayered targets
US5751585A (en) * 1995-03-20 1998-05-12 Electro Scientific Industries, Inc. High speed, high accuracy multi-stage tool positioning system
US5847960A (en) * 1995-03-20 1998-12-08 Electro Scientific Industries, Inc. Multi-tool positioning system
JPH09107168A (ja) * 1995-08-07 1997-04-22 Mitsubishi Electric Corp 配線基板のレーザ加工方法、配線基板のレーザ加工装置及び配線基板加工用の炭酸ガスレーザ発振器
JPH11773A (ja) * 1997-06-11 1999-01-06 Nec Corp レーザ加工装置およびその方法
JP3532100B2 (ja) * 1997-12-03 2004-05-31 日本碍子株式会社 レーザ割断方法
JP3395141B2 (ja) * 1998-03-02 2003-04-07 住友重機械工業株式会社 レーザ加工装置
US6032997A (en) * 1998-04-16 2000-03-07 Excimer Laser Systems Vacuum chuck
US6057180A (en) * 1998-06-05 2000-05-02 Electro Scientific Industries, Inc. Method of severing electrically conductive links with ultraviolet laser output
US6063695A (en) * 1998-11-16 2000-05-16 Taiwan Semiconductor Manufacturing Company Simplified process for the fabrication of deep clear laser marks using a photoresist mask
JP2000164535A (ja) * 1998-11-24 2000-06-16 Mitsubishi Electric Corp レーザ加工装置
TW482705B (en) * 1999-05-28 2002-04-11 Electro Scient Ind Inc Beam shaping and projection imaging with solid state UV Gaussian beam to form blind vias
US6472295B1 (en) * 1999-08-27 2002-10-29 Jmar Research, Inc. Method and apparatus for laser ablation of a target material
US6255621B1 (en) * 2000-01-31 2001-07-03 International Business Machines Corporation Laser cutting method for forming magnetic recording head sliders
US6356337B1 (en) * 2000-03-08 2002-03-12 Anvik Corporation Two-sided substrate imaging using single-approach projection optics
DE10026066A1 (de) * 2000-05-25 2001-11-29 Deere & Co Vorrichtung zum Umhüllen eines Rundballens

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