JP2004526575A5

JP2004526575A5 -

Info

Publication number: JP2004526575A5
Application number: JP2002560818A
Authority: JP
Filing date: 2002-01-10
Publication date: 2005-06-30
Anticipated expiration: 2022-01-10

Claims

In laser processing silicon, GaAs, indium phosphide, silicon carbide, silicon nitride, Ge: Si or single crystal sapphire substrate,
Generating a first laser system output having a pulse repetition frequency greater than 5 kHz and an output pulse energy greater than 100 μJ at a wavelength shorter than 400 nm;
Directing the first laser system output to a target location on the substrate and removing the substrate material at the target location with a first spot area less than 25 μm across the surface of the substrate material;
Generating a second laser system output having an output pulse energy greater than 100 μJ at a pulse repetition frequency greater than 5 kHz;
The second laser system output is directed to a second target position with a second spot area that is less than 25 μm across the surface of the substrate material, the second spot area at least partially locating the first spot area. And a method of laser processing.

2. The laser processing method according to claim 1, wherein the substrate material is supported by a chuck having a surface material that is substantially non-reflective with respect to both or either one of the first and second laser system outputs.

3. The laser processing method according to claim 2, wherein the substrate material has a back surface, and the surface material of the chuck hardly causes laser damage to the back surface of the substrate material.

3. The laser processing method according to claim 2, wherein a surface material of the chuck is substantially completely transmitted through one or both of the first and second laser system outputs.

3. The laser processing method according to claim 2, wherein the surface material of the chuck exhibits substantially complete absorptivity with respect to the laser wavelength of either or both of the first and second laser system outputs.

2. The laser processing method according to claim 1, wherein the first and second laser system outputs are generated by different lasers.

7. The laser processing method according to claim 6, wherein the first and second laser system outputs have different wavelengths.

2. The laser processing method according to claim 1, wherein both the first and second laser system outputs are generated by the same laser.

3. The laser processing method according to claim 2, wherein the first and second laser system outputs are generated by different lasers.

10. The laser processing method according to claim 9, wherein the first and second laser system outputs have different wavelengths.

2. The laser processing method according to claim 1, wherein the depth of the substrate material is made shallower than 100 [mu] m, and the flux amount of the laser system output is made larger than 20 J / cm < ² >.

2. The laser processing method according to claim 1, wherein the depth of the substrate material is made deeper than 100 [mu] m, and the flux amount of the laser system output is made larger than 100 J / cm < ² >.

13. The laser processing method according to claim 12, wherein the depth of the substrate material is deeper than 300 [mu] m.

14. The laser processing method according to claim 13, wherein both or one of the first and second laser system outputs has an output pulse energy greater than 360 [mu] J.

14. The laser processing method according to claim 13, wherein both or one of the first and second laser system outputs is generated at a pulse repetition frequency greater than 10 kHz.

In the laser processing method as described in any one of Claims 1-15, Furthermore,
Generating low speed and high speed motion control signals from a positioning signal processor;
Using a low speed positioner driver in response to a low speed motion control signal to control a large relative motion range of the translation stage;
Using a high-speed positioner driver in response to the high-speed motion control signal to control a small relative motion range of the high-speed positioner to enable a cutting profile on the surface of the substrate material.

In the laser processing method as described in any one of Claims 1-15, Furthermore,
A laser processing method, wherein a through hole is formed through a substrate material having a thickness of at least 50 μm, and an aspect ratio of the through hole is larger than 20: 1.

18. The laser processing method according to claim 17, wherein both or any one of the first and second laser system outputs has at least five laser system output pulses.

The laser processing method according to claim 17, wherein the laser system output is irradiated on the front surface of the substrate material to form a through hole reaching the back surface thereof.
A laser processing method comprising a step of aligning an apparatus for performing processing on a back surface of a substrate material by using a feature of a through hole in the back surface of the substrate.

18. The laser processing method according to claim 17, wherein at least two through holes are formed and the back surface of the substrate material for other processing is aligned using both of the through holes.

18. The laser processing method according to claim 17, wherein a laser system output is irradiated on the front surface of the substrate to form a through hole reaching the back surface, and at this time, the substrate is supported by a chuck having a surface material having the holes formed therein. The laser processing method which performs a through-hole process on the said hole.

In the laser processing method as described in any one of Claims 1-15, Furthermore,
A laser processing method comprising a step of forming a kerf having a size in a length direction larger than a spot size.

23. The laser processing method according to claim 22, wherein the laser system output has a characteristic of suppressing formation of a lip portion due to melting.

23. The laser processing method according to claim 22, wherein the laser system output has a characteristic of suppressing the formation of slag.

23. The laser processing method according to claim 22, wherein the laser system output has a characteristic of suppressing peel back of a kerf edge.

23. The laser processing method according to claim 22, wherein the laser system output has a characteristic of suppressing chip-out along the edge of the kerf.

The laser processing method according to claim 22, further comprising:
Generating a sequential laser system output with a pulse repetition frequency greater than 5 kHz and an output pulse energy greater than 100 μJ at a wavelength shorter than 400 nm;
The sequential laser system output is directed to a sequential target position with a spot area of less than 25 μm across the surface of the substrate material, each sequential spot area at least partially in front of the previous spot area. A laser processing method comprising the steps of overlapping to form a kerf.

23. The laser processing method according to claim 22, wherein the kerf has a curved profile.

23. The laser processing method according to claim 22, wherein a deep kerf having a bottom is formed in the substrate material, and the device is separated by the deep kerf, but a substrate material having a sufficient thickness is maintained at the bottom of the deep kerf. A laser processing method including a step of connecting the devices and further dividing the device by adopting a laser system output.

23. The laser processing method according to claim 22, wherein the substrate material is supported by the chuck, the kerf is extended through the depth of the substrate material, and a hole is formed in the chuck, A laser processing method for performing through kerf processing.

In the laser processing method as described in any one of Claims 1-15, Furthermore,
Identifying a first feature on the first surface of the workpiece;
Alignment of the first target position of the laser system with respect to a first feature on the first surface so that the first target position is close to the intended side of the workpiece element on the first surface. Process,
Directing one or more first laser system outputs to irradiate the first surface linearly with the first surface at the first target position, and forming the first kerf to a kerf depth shallower than the substrate material depth. When,
Aligning the second target position of the laser system with the second feature on the first surface or the second surface, the second target position being close to the intended side of the workpiece element on the second surface An alignment step of being in the same plane as the first target position;
Directing one or more second laser system outputs to irradiate the second surface linearly therewith at a second target position, forming a second kerf in the same plane as the first kerf, and workpiece Forming a through-cutting that defines an intended side of the device.

32. The laser processing method according to claim 31, wherein the first and second features are each drilled by a laser over the entire depth of the substrate material and appear on both the first and second surfaces. A laser processing method for providing a hole.

A laser system for processing a workpiece silicon, GaAs, indium phosphide, silicon carbide, silicon nitride, Ge: Si or single crystal sapphire substrate,
A low speed positioner having a translation stage comprising or supporting a chuck having a surface material that is substantially completely non-reflective to the laser system output to achieve a large range of relative motion between the tool and the workpiece;
A high speed positioner that achieves a small range of relative motion between the laser system output and the workpiece;
A positioning signal processor for extracting low speed and high speed motion control signals from positioning instructions;
A low speed positioner driver that controls a large range of relative motion of the translation stage in response to a low speed motion control signal;
A high-speed positioner driver that controls the relative movement of a small range of the high-speed positioner in response to a high-speed movement control signal;
A laser system comprising a resonator generating a laser system output.

34. The laser system of claim 33, wherein the chuck surface material is substantially completely transparent to the laser system output.

34. The laser system according to claim 33, wherein the chuck surface material exhibits substantially complete absorption for the laser wavelength of the laser system output.

34. The laser system according to claim 33, wherein a kerf having a curved profile is facilitated by a high-speed positioner driver.

34. The laser system according to claim 33, wherein the first and second laser system outputs are generated by different lasers.

38. The laser system according to claim 37, wherein the first and second laser system outputs have different wavelengths.

39. The laser system according to claim 33, wherein the depth of the substrate material is made shallower than 100 [mu] m and the flux amount of the laser system output is made larger than 20 J / cm < ² >.

39. A laser system according to any one of claims 33 to 38, wherein the depth of the substrate material is deeper than 100 [mu] m and the flux amount of the laser system output is greater than 100 J / cm < ² >.