JP3532100B2 - Laser cleaving method - Google Patents
Laser cleaving methodInfo
- Publication number
- JP3532100B2 JP3532100B2 JP17216398A JP17216398A JP3532100B2 JP 3532100 B2 JP3532100 B2 JP 3532100B2 JP 17216398 A JP17216398 A JP 17216398A JP 17216398 A JP17216398 A JP 17216398A JP 3532100 B2 JP3532100 B2 JP 3532100B2
- Authority
- JP
- Japan
- Prior art keywords
- laser
- single crystal
- plane
- sapphire substrate
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
Description
【０００１】[0001]
【発明の属する技術分野】 本発明は、単結晶サファイ
ア基板のレーザ割断方法に係り、更に詳しくは、単結晶
サファイア基板、特に、機能膜を表面に形成した単結晶
サファイア基板の効率的かつ高精度の割断を行うこと
で、得られた割断面をそのまま素子あるいはデバイスの
機能面として使用することを可能ならしめる、生産性に
優れたレーザ割断方法に関する。TECHNICAL FIELD The present invention relates to a laser cleaving method for a single crystal sapphire substrate , and more particularly to a single crystal sapphire substrate , particularly a single crystal having a functional film formed on its surface.
The present invention relates to a laser cleaving method with excellent productivity, which enables the obtained cleaved surface to be used as it is as a functional surface of an element or device by efficiently and accurately cleaving a sapphire substrate .
【０００２】[0002]
【従来の技術】 ＳＡＷフィルタ（表面弾性波フィル
タ）やＬＥＤ（発光ダイオード）、ＬＤ（半導体レー
ザ）は、ＣＶＤ法やＰＶＤ法といった各種の薄膜成形技
術を用いて、無機単結晶基板上に種々の機能膜や電極を
形成した後、基板を切断してチップ化することで作製さ
れている。2. Description of the Related Art SAW filters (surface acoustic wave filters), LEDs (light emitting diodes), and LDs (semiconductor lasers) are manufactured on various inorganic single crystal substrates using various thin film forming techniques such as CVD and PVD. It is manufactured by forming a functional film and electrodes and then cutting the substrate into chips.
【０００３】 近年、窒化ガリウム（ＧａＮ）を用いて
青色ＬＥＤの高輝度化が図られたことをきっかけに、青
色ＬＤの室温発振に大きな関心が集まっている。この青
色ＬＤでは、レーザ発振のためにチップ内に光共振器構
造を必要とし、通常、結晶の劈開面を利用してこの光共
振器とする手段が採られる。すなわち、ＧａＮ系青色Ｌ
Ｄの製造方法は、単結晶サファイア基板上にバッファ層
と呼ばれる中間層を介して、ＧａＮを成膜し、電極のパ
ターニング等を行って多層成膜を行った後、チップ化す
るといった工程で行われ、光共振器は最後のチップ化工
程において形成される。In recent years, a room temperature oscillation of a blue LD has attracted a great deal of attention due to the fact that gallium nitride (GaN) is used to increase the brightness of the blue LED. In this blue LD, an optical resonator structure is required in the chip for laser oscillation, and usually, a means for making this optical resonator by utilizing the cleavage plane of the crystal is adopted. That is, GaN blue L
The manufacturing method of D is performed by forming a GaN film on a single crystal sapphire substrate via an intermediate layer called a buffer layer, patterning electrodes, etc. to form a multilayer film, and then forming a chip. The optical resonator is formed in the final chip forming process.
【０００４】ここで、チップ化の方法としては、青色Ｌ
ＥＤの製造に用いられている方法であるダイヤモンドス
クライブ法を用いることができる。このダイヤモンドス
クライブ法は、ダイヤモンドポイントにより基板表裏面
に溝入れ加工を行い、その後にブレーキング用の刃を溝
の一面に当接させた状態で刃に基板表裏面に垂直な方向
の力を加えて切断する方法である。Here, as a method of forming a chip, blue L
The diamond scribe method, which is the method used for manufacturing EDs, can be used. In this diamond scribe method, grooving is performed on the front and back surfaces of the substrate with diamond points, and then a blade for braking is applied to the blade in a direction perpendicular to the front and back surfaces of the substrate while contacting one surface of the groove. It is a method of cutting.
【０００５】 また、ダイヤモンドスクライブ法に代え
て、レーザスクライブ、ダイシング、といった方法を用
いることもできる。レーザスクライブは、溝入れ加工
を、例えばＹＡＧレーザの第４次高調波を基板に照射し
て行い、その他はダイヤモンドスクライブと同様に行う
ものである。これらに対して、ダイシングは、ダイヤモ
ンドホイールを用いた切削により基板の切断を行うもの
である。Further, a method such as laser scribing or dicing can be used instead of the diamond scribing method. The laser scribing is performed by grooving by irradiating the substrate with, for example, the fourth harmonic of a YAG laser, and otherwise performing the same as the diamond scribing. On the other hand, dicing is to cut the substrate by cutting with a diamond wheel.
【０００６】[0006]
【発明が解決しようとする課題】 しかしながら、単結
晶サファイア基板は硬度が高いこと、結晶面によっては
弱い劈開性があるものの完全な劈開面がないことから、
上記ダイヤモンドスクライブによる切断方法にあって
は、ダイヤモンドポイントの摩耗が速く、良好な割断面
を得ることが困難であり、さらに、生産歩留が悪いとい
う問題がある。ダイシングにおいては、加工速度（切断
速度）を速くした場合には、砥石の摩耗が早く、切断面
にチッピングが発生する問題があり、一方、加工速度を
遅くしても砥石の摩耗が極端に低減されるわけではな
く、しかも生産性は低下するといった問題がある。However, since the single crystal sapphire substrate has high hardness and has a weak cleavage property depending on the crystal plane, but does not have a perfect cleavage plane,
The cutting method using the diamond scribe has problems that the diamond points are rapidly worn, it is difficult to obtain a good fractured surface, and the production yield is low. In dicing, when the processing speed (cutting speed) is increased, the grindstone wears quickly and chipping occurs on the cut surface. On the other hand, even if the working speed is slowed, the grindstone wear is extremely reduced. However, there is a problem that productivity is reduced.
【０００７】 これに対し、レーザスクライブによる切
断方法は、ダイヤモンドスクライブと同様に、ブレーキ
ングによる溝と溝との間の切断が必要であるため、溝入
れ加工工程の他にさらにブレーキングのための後工程が
必要となり、加工効率が必ずしも良いものではない。ま
た、基板の表裏に形成する溝の位置ずれによる切断面の
形状不良が発生する問題もある。On the other hand, the cutting method by laser scribing requires cutting between the grooves by breaking as in the case of diamond scribing. A post process is required, and the processing efficiency is not always good. In addition, there is a problem that the cut surface has a defective shape due to the positional deviation of the grooves formed on the front and back surfaces of the substrate.
【０００８】 このような従来技術に対し、レーザを基
板に照射して蓄熱させ、その熱による熱応力により割断
させる方法が考えられるが、この方法では、割断面にお
いては良好な加工面が得られるが、表裏面にクラックや
チッピング等の欠陥が発生して加工精度が悪くなるとい
う問題があった。In contrast to such a conventional technique, a method of irradiating a substrate with laser to store heat and cleaving by thermal stress due to the heat can be considered, but with this method, a good machined surface can be obtained in a fractured surface. However, there is a problem that defects such as cracks and chippings occur on the front and back surfaces, and the processing accuracy deteriorates.
【０００９】[0009]
【課題を解決するための手段】 本発明は上述した従来
技術の問題点に鑑みてなされたものであり、その目的と
するところは、単結晶サファイア基板、特に機能膜を表
面に形成した単結晶サファイア基板の割断に適したレー
ザ割断方法を提供し、素子等の製造に用いられた場合、
得られる素子の品質および素子製造における生産性の向
上を図ることにある。Means for Solving the Problems The present invention has been made in view of the above-mentioned problems of the conventional technique, and an object of the present invention is to provide a single crystal sapphire substrate, particularly a single crystal having a functional film formed on the surface thereof. Provide a laser cutting method suitable for cutting a sapphire substrate, and when used for manufacturing an element,
It is to improve the quality of the obtained element and the productivity in the element manufacturing .
【００１０】すなわち、本発明によれば、主平面として
三方晶系におけるミラー指数で表されるＲ面又はｃ面、
及び側面としてａ面を有する平板状の単結晶サファイア
基板に、前記単結晶サファイア基板に吸収されやすいレ
ーザ光を照射して、前記単結晶サファイア基板を割断す
る方法であって、前記レーザ光を照射し得るレーザを一
の前記主平面と前記一の主平面及び前記ａ面に垂直に想
定した前記単結晶サファイア基板の割断予定面とが交差
する交差線に対応して走査させつつ前記レーザ光を前記
交差線に沿って一回照射することによって、前記単結晶
サファイア基板の前記レーザ光を照射された部分を加
熱、昇華させて、前記単結晶サファイア基板の前記割断
予定面に沿って、所定の深さの有底の溝を形成して前記
単結晶サファイア基板を前記割断予定面の一部で分断す
るとともに、前記溝の底部を加熱して蓄熱させ、この蓄
熱された熱によって前記割断予定面の残部に沿って前記
溝の底部と前記一の主平面とは反対側の他の主平面との
間に熱勾配を発生させ、前記熱勾配に起因する熱応力に
よって前記単結晶サファイア基板を前記割断予定面の残
部でさらに分断して、前記単結晶サファイア基板を一工
程で割断することを特徴とするレーザ割断方法、が提供
される。[0010] That is, according to the present invention, as Shutaira surface
R plane or c plane represented by Miller index in trigonal system ,
And a plate-shaped single crystal sapphire substrate having a surface as the side surface, and irradiating the single crystal is absorbed by the sapphire substrate easily <br/> laser light, a method of cleaving the single crystal sapphire substrate , A laser that can irradiate the laser light
Of the plane perpendicular to the main plane and the one main plane and the a-plane.
Intersects the planned cleavage plane of the single crystal sapphire substrate
The laser beam while scanning corresponding to the intersecting line
By irradiating once along the intersection line, the single crystal
The portion of the sapphire substrate that was irradiated with the laser light was added.
The single crystal sapphire substrate is cleaved by heat and sublimation.
Form a bottomed groove with a predetermined depth along the planned surface
Divide the single crystal sapphire substrate at a part of the planned cleavage plane
At the same time, the bottom of the groove is heated to store heat.
Due to the heat that is heated, along the remaining part of the planned cleavage surface,
Between the bottom of the groove and the other main plane opposite to the one main plane
A thermal gradient is generated between the
Therefore, the single crystal sapphire substrate is left on the surface to be cleaved.
The single crystal sapphire substrate
Laser cleaving method characterized by cleaving in degree, is provided.
【００１１】本発明のレーザ割断方法は、単結晶サファ
イア基板を一の主平面及びａ面に垂直に想定した単結晶
サファイア基板の割断予定面で割断した後に、割断され
た単結晶サファイア基板を、一の主平面に垂直で、かつ
ａ面に平行に想定した第二の割断予定面で同様にさらに
割断して、単結晶サファイア基板を所定形状に割断する
ことが好ましく、レーザ光を照射し得るレーザが、ＣＯ
2 レーザであることがさらに好ましい。特に、機能膜が
主平面上に形成された単結晶サファイア基板の割断に好
適に用いることができ、また、このような機能膜が形成
された単結晶サファイア基板が、割断後にＳＡＷフィル
タ、青色ＬＥＤ又は青色ＬＤとして用いられるものであ
る場合に有用である。使用するＣＯ2レーザとしては、
加工周波数を５００Ｈｚ以上、パルス幅を３００μｓｅ
ｃ以下、投入エネルギを０．０５〜０．４Ｊの範囲内の
短パルスＣＯ2レーザを用いることが好ましい。なお、
単結晶サファイア基板の厚さは一般的な０．３ｍｍ〜
０．５ｍｍの範囲内のものが好適に用いられるが、厚さ
１ｍｍ程度以上のものでも、割断することは可能であ
る。The laser cleaving method of the present invention uses a single crystal saffer.
A single crystal in which the ear substrate is assumed to be perpendicular to one main plane and a plane
After slicing at the planned sapphire substrate surface, it will be cleaved.
A single crystal sapphire substrate perpendicular to one main plane, and
In the second planned cleavage plane parallel to the a-plane,
Cleave and cleave the single crystal sapphire substrate into a predetermined shape
Preferably, the laser capable of irradiating laser light is CO
More preferably two lasers. In particular, the functional film
Suitably it can be used for cleaving the single crystal sapphire substrate formed Shutaira plane, also, a single crystal sapphire substrate such functional film is formed, SAW fill <br/> data after cleaving, blue It is useful when used as an LED or a blue LD. The CO 2 laser used is
Processing frequency of 500Hz or more, pulse width of 300μse
It is preferable to use a short pulse CO 2 laser having an input energy of c or less and a range of input energy of 0.05 to 0.4 J. In addition,
The thickness of the single crystal sapphire substrate is generally 0.3 mm ~
A material having a thickness of 0.5 mm is preferably used, but a material having a thickness of about 1 mm or more can be cut.
【００１２】また、上述した本発明のレーザ割断方法に
よれば、ＣＯ2レーザのレーザ光の照射によって単結晶
サファイア基板に形成する溝の深さは、単結晶サファイ
ア基板の基板厚さの１０％以上であれば割断が可能であ
るが、この溝の深さは基板厚さの２０％以上５０％以下
の範囲の場合に、より良好な割断面が得られるために好
ましく、単結晶サファイア基板を割断予定面で割断する
ことによって得られた単結晶サファイア基板に生じた割
断面の亀裂真直度は±１０μｍの範囲内に納められるこ
とが好ましい。Further, according to the laser cleaving method of the present invention described above, the depth of the groove you formed in the single crystal sapphire substrate by irradiation of CO 2 laser of laser light 10 of the substrate thickness of the single crystal sapphire substrate but if more than% is possible breaking, the depth of the groove in the case of the range of 20% to 50% of the substrate thickness, preferably to better fractured to obtain a single-crystal sapphire substrate Cleave at the planned surface
This crack straightness fractured generated in the single crystal sapphire substrate obtained by being placed in a range of ± 10 [mu] m
And are preferred .
【００１３】[0013]
【発明の実施の形態】 本発明においては、主平面とし
て三方晶系におけるミラー指数で表されるＲ面、側面と
してａ面を有する平板状の単結晶サファイア基板（以
下、「Ｒ面基板」という。）、又は主平面としてｃ面、
側面としてａ面を有する平板状の単結晶サファイア基板
（以下、「ｃ面基板」という。）が用いられ、このＲ面
基板又はｃ面基板表面にレーザ光（たとえば、ＣＯ2レ
ーザのレーザ光）を照射してＲ面基板又はｃ面基板を割
断する。ここで、結晶化学的に、Ｒ面は三方晶系におけ
るミラー指数（１ −１ ０ ２）で表される面であ
り、ｃ面は（０ ０ ０ １）面、ａ面は（１ １ −
２ ０）面を指す。In DETAILED DESCRIPTION OF THE INVENTION The present invention, as Shutaira surface
R plane represented by Miller indices of trigonal Te, and the side
And plate-shaped single crystal sapphire substrate having a surface (hereinafter, referred to as "R-plane substrate".), Or c-plane as Shutaira surface,
Plate-shaped single crystal sapphire substrate having a surface as a side surface (hereinafter, referred to as "c-plane substrate".) Is use Irare, laser light to the R-plane substrate or a c-plane substrate surface (e.g., CO 2 lasers lasers (Light) to irradiate the R-plane substrate or the c-plane substrate. Here, in terms of crystal chemistry, the R plane is a plane represented by the Miller index (1 −1 0 2) in the trigonal system, the c plane is the (0 0 0 1) plane, and the a plane is (1 1 −
20) plane.
【００１４】このようなＲ面はＳＡＷフィルタ用のＡｌ
Ｎ膜等の形成に適した面であり、一方、ｃ面は青色ＬＥ
Ｄ用のＧａＮ膜の形成に適した面である。本発明におい
てはＣＯ2レーザが好適に用いられるが、割断する基板
の使用するレーザの波長における吸光係数が大きい、す
なわち、レーザ光が基板に吸収されやすいという条件を
満足するならば、他の種類のレーザ光を照射し得るレー
ザ、たとえば、ＹＡＧレーザの第４次高調波等を用いる
こともできる。Such an R surface is an Al for SAW filter.
It is a surface suitable for forming N film, etc., while the c-plane is blue LE
This is a surface suitable for forming a GaN film for D. In the present invention, a CO 2 laser is preferably used, but if the substrate to be cleaved has a large absorption coefficient at the wavelength of the laser used, that is, if the condition that the laser light is easily absorbed by the substrate is satisfied, another type is used. Laser that can irradiate
The fourth harmonic of a YAG laser or the like can also be used.
【００１５】上述の通り、本発明のレーザ割断方法にお
いては、Ｒ面基板又はｃ面基板が用いられるが、いずれ
の基板を用いた場合であっても、基本的な割断性能や得
られた割断面の性状に大きな差はない。そこで、以下に
おいて、Ｒ面基板を例として本発明を説明することとす
る。As described above, in the laser cleaving method of the present invention, the R-plane substrate or the c-plane substrate is used. However, whichever substrate is used, the basic cleaving performance and the obtained cleaving performance are obtained. There is no big difference in the properties of the cross section. Therefore, the present invention will be described below by taking the R-side substrate as an example.
【００１６】本発明におけるレーザ割断の構成は、図１
に示す通りである。すなわち、まず、レーザ光１を照射
し得るレーザ（図示せず）をＲ面基板２の主平面と主平
面及びａ面に垂直に想定したＲ面基板２の割断予定面３
とが交差する交差線に対応して一定の速度で走査させつ
つレーザ光１を交差線に沿って一回照射することによっ
て、Ｒ面基板２のレーザ光１を照射された部分を加熱、
昇華させて、Ｒ面基板２の割断予定面３に沿って、所定
の深さの有底の溝４を形成してＲ面基板２を割断予定面
３の一部で分断するとともに、溝４の底部を加熱して蓄
熱させ、この蓄熱された熱によって割断予定面３の残部
に沿って溝４の底部と主平面とは反対側の他の主平面と
の間に熱勾配を発生させ、この熱勾配に起因する熱応力
によって、Ｒ面基板２を割断予定面３の残部でさらに分
断して、Ｒ面基板２を一工程で割断することを特徴とす
るものである。The structure of laser cleaving in the present invention is shown in FIG.
As shown in. That is, first, the laser light 1 is irradiated.
The main plane Shutaira of which may be a laser (not shown) R face substrate 2
Preset cleaving surface 3 of the R-plane substrate 2 which assumes perpendicular to the plane and a plane
Scan at a constant speed corresponding to the intersection line where
Depending on the irradiation once One laser beam 1 along the intersecting line
To heat the portion of the R-side substrate 2 irradiated with the laser beam 1 ,
After sublimation , along the planned cleavage plane 3 of the R-side substrate 2, predetermined
Plane to cut the R-side substrate 2 by forming a bottomed groove 4 having a depth of
With severing a portion of 3, by heating the bottom of the groove 4 is蓄<br/> heat the remainder of the expected splitting surface 3 I by this heat storage thermal
Along the thermal gradient is generated between the other main flat surface opposite to the bottom portion and the main plane of the groove 4, the thermal stress caused by the thermal gradient, the R-plane substrate 2 of the planned cutting face 3 The rest is more minutes
It is characterized in that the R-side substrate 2 is cut in one step.
It is those that.
【００１７】本発明においては、Ｒ面基板を主平面及び
ａ面に垂直に想定した割断予定面で割断した後に、割断
されたＲ面基板を主平面に垂直で、かつａ面に平行に想
定した（割断予定面と直交するように想定した）第二の
割断予定面で同様にさらに割断して、Ｒ面基板を所定形
状に割断することが好ましい。こうして、Ｒ面基板か
ら、良好な形状精度を有するチップ、素子等を得ること
ができる。In the present invention, the R-plane substrate is used as the main plane and
After cleaving at the planned cleaving surface assumed to be perpendicular to the a-plane, cleaving
The processed R-plane substrate is perpendicular to the main plane and parallel to the a-plane.
Specified (assumed to be orthogonal to the planned cutting plane) Second
In the same way, cut the R-plane substrate into the specified shape.
It is preferable to cut it into a shape . In this way, chips, elements, etc. having good shape accuracy can be obtained from the R-plane substrate.
【００１８】ここで、図２（ａ）に、主平面と第二の割
断予定面とが交差する交差線に対応してＣＯ2レーザを
走査しつつレーザ光を交差線に沿って照射することによ
り得られるＲ面基板の割断面（以下、「ａ平行割断面」
という。）の組織を示す写真を、図２（ｂ）に主平面と
割断予定面とが交差する交差線に対応してＣＯ2レーザ
を走査しつつレーザ光を交差線に沿って照射することに
より得られるＲ面基板の割断面（以下、「ａ垂直割断
面」という。）の組織を示す写真をそれぞれ示す。明ら
かに、ａ平行割断面において、平滑な割断面が得られて
おり、ａ垂直割断面においては、レーザ光の走査方向に
縞状の凹凸が生じていることがわかる。Here, in FIG. 2 (a), the main plane and the second split plane are shown.
The split surface of the R-plane substrate obtained by irradiating the laser beam along the crossing line while scanning the CO 2 laser corresponding to the crossing line where the planned cutting plane intersects (hereinafter, “a parallel split surface”).
Say. A photograph illustrating the organization), and the main plane in FIG. 2 (b)
A split surface of the R-plane substrate (hereinafter referred to as “a vertical split surface”) obtained by irradiating a laser beam along the intersection line while scanning a CO 2 laser corresponding to the intersecting line where the planned cleavage plane intersects. The photographs showing the structure of (. Apparently, a smooth fractured surface is obtained in the a-parallel fractured surface, and striped unevenness is generated in the laser light scanning direction in the a-vertical fractured surface.
【００１９】また、図３はＲ面基板におけるレーザ照射
側から見た割断面の切り口の組織を示す写真であり、図
３（ａ）はａ平行割断面の亀裂組織を示し、図３（ｂ）
はａ垂直割断面の亀裂組織を示している。ａ平行割断
面、ａ垂直割断面のいずれの場合においても、レーザ走
査方向の最後部において、レーザ走査方向軸からずれた
波状亀裂が生じていることがわかる。しかし、ａ平行割
断面においては、ａ垂直割断面よりもこの波状亀裂の進
展幅が狭く、レーザ走査最後部以外の部分での割断面の
直進性が良好である。一方、ａ垂直割断面では、レーザ
走査最後部での波状亀裂の進展幅は広いものの、その他
の部分での割断面の直進性には問題がない。Further, FIG. 3 shows laser irradiation on the R-plane substrate.
It is a photograph which shows the structure of the cut surface of the fracture surface seen from the side , FIG.3 (a) shows the crack organization of the parallel fracture surface of a, and FIG.3 (b).
Indicates a crack structure of a vertical split surface. It can be seen that in both the a-parallel split section and the a-vertical split section, a wavy crack deviated from the axis in the laser scanning direction occurs at the rearmost portion in the laser scanning direction. However, in the a-parallel split section, the width of propagation of this wavy crack is narrower than in the a-vertical split section, and the straightness of the split surface in the portion other than the last portion of the laser scanning is good. On the other hand, in the a-vertical fractured surface, the wavy crack propagates widely at the laser scanning rearmost portion, but there is no problem with the straightness of the fractured surface at other portions.
【００２０】 したがって、Ｒ面基板から本発明のレー
ザ割断方法によって、角状チップを得る場合には、ま
ず、最初にａ垂直割断面を形成し、この場合の直進性が
良好な部分において、ａ平行割断面を形成すると、得ら
れる四角形状のチップにおいては、ａ垂直割断面を形成
する場合のレーザ走査最後部における波状断面が発生し
難く、形状精度の良好なチップが得られるとともに、生
産性の向上が図られる。Therefore, when a rectangular chip is obtained from the R-plane substrate by the laser cleaving method of the present invention, first, a vertical split section is formed, and in this case, in a portion where straightness is good, a When the parallel split surface is formed, in the obtained quadrangular chip, the wavy cross section at the laser scanning rearmost portion when forming the a vertical split surface is less likely to occur, and a chip with good shape accuracy can be obtained, and the productivity can be improved. Is improved.
【００２１】上述した割断面の性状を考慮すると、本発
明のレーザ割断方法は、機能膜が主平面上に形成された
Ｒ面基板の割断にも好適に用いることができる。つま
り、一般に無機単結晶基板表面に形成される機能膜は、
基板表面の結晶の原子配列の影響を受けるため、Ｒ面基
板上に形成された機能膜の割断面は、Ｒ面基板の割断面
と同等の組織を有することが期待される。そこで、実際
に、Ｒ面にＡｌＮ膜を形成したＲ面基板を割断して得ら
れた割断面の組織を示す写真を図４に示す。[0021] Considering the properties of the fractured described above, the laser cleaving method of the present invention, the functional film can be suitably used for cleaving the R-plane substrate formed on Shutaira surface. That is, generally, the functional film formed on the surface of the inorganic single crystal substrate is
Since it is affected by the atomic arrangement of crystals on the surface of the substrate, the fracture surface of the functional film formed on the R-plane substrate is expected to have the same structure as the fracture surface of the R-plane substrate. Therefore, FIG. 4 shows a photograph showing the structure of the fractured surface obtained by actually cutting the R-plane substrate having the AlN film formed on the R-plane.
【００２２】 図４（ａ）に示されるように、ａ平行割
断面におけるＡｌＮ膜の断面は平滑であり、また、図４
（ｂ）に示されるように、ａ垂直割断面においてもＲ面
基板自体の割断面よりも凹凸の小さい割断面が得られ
た。したがって、上記基板の加工精度と機能膜の割断面
組織とから、本発明によるレーザ割断方法を用いた場合
には、レーザ割断のみによって所定の形状を有するチッ
プ等を基板から取り出すことができるので、後加工によ
り形状の調整を行うことが実質上、不要であり、しかも
得られる機能膜の断面性状が良好であるので、ここでも
研磨等による後加工を必要としない。As shown in FIG. 4A, the cross section of the AlN film in the a-parallel split cross section is smooth, and FIG.
As shown in (b), even in the a-vertical fractured surface, a fractured surface having smaller unevenness than that of the R-plane substrate itself was obtained. Therefore, from the processing accuracy of the substrate and the fractured surface structure of the functional film, when the laser cutting method according to the present invention is used, a chip or the like having a predetermined shape can be taken out from the substrate only by laser cutting, It is substantially unnecessary to adjust the shape by post-processing, and the cross-sectional properties of the obtained functional film are good. Therefore, post-processing such as polishing is not necessary here either.
【００２３】したがって、たとえば、機能膜が形成され
たＲ面基板からＳＡＷフィルタ等を得る場合には、本発
明のレーザ割断方法のみによって所定の加工精度を有す
るものが得られる利点があり、また、機能膜が形成され
たｃ面基板が、割断後に青色ＬＥＤ又は青色ＬＤとして
用いられるものである場合にも、割断面をそのまま発光
面あるいは光共振器とすることが可能となるため、本発
明のレーザ割断方法は、歩留の向上および生産性の向上
に著しく寄与する。Therefore, for example, when a SAW filter or the like is obtained from the R-plane substrate on which the functional film is formed, there is an advantage that only the laser cleaving method of the present invention can obtain a product having a predetermined processing accuracy. Even when the c-plane substrate on which the functional film is formed is used as a blue LED or a blue LD after cleaving, the cleaved section can be used as it is as a light emitting surface or an optical resonator. The laser cleaving method remarkably contributes to improvement of yield and productivity.
【００２４】このようなレーザ割断方法に用いられるＣ
Ｏ2レーザとしては、加工周波数を５００Ｈｚ以上、パ
ルス幅を３００μｓｅｃ以下、投入エネルギを０．０５
〜０．４Ｊの範囲内の短パルスＣＯ2レーザを用いるこ
とが好ましい。パルス幅を３００μｓｅｃ以下とするこ
とで、一度の照射により熱が拡散する領域を１００μｍ
以下とし、広い領域での熱応力の発生を抑えることがで
き、例えばＳＡＷフィルタに要求される±０．１ｍｍと
いった加工精度にも十分に対応することができるように
なる。一方、パルス幅がこの値よりも大きい場合には、
端面のチッピングにより加工精度が低下する問題が生ず
ることがある。C used in such a laser cutting method
The O 2 laser has a processing frequency of 500 Hz or more, a pulse width of 300 μsec or less, and an input energy of 0.05.
It is preferable to use a short pulse CO 2 laser in the range of 0.4 J. By setting the pulse width to 300 μsec or less, the area where heat is diffused by one irradiation is 100 μm.
As described below, it is possible to suppress the generation of thermal stress in a wide region, and it is possible to sufficiently cope with the processing accuracy of ± 0.1 mm required for a SAW filter, for example. On the other hand, if the pulse width is larger than this value,
Machining accuracy chipping of the end face is sometimes caused a problem of lowering.
【００２５】 また、加工周波数を５００Ｈｚ以上、す
なわちレーザパルスの照射間隔を２ｍｓｅｃ以下とする
と、その直前に照射されたレーザパルスの熱が十分に冷
めきらないうちに、次のレーザパルスが照射されること
となり、これにより徐々に熱応力を大きくすることがで
きるため好ましい。If the processing frequency is 500 Hz or higher, that is, the laser pulse irradiation interval is 2 msec or less, the next laser pulse is irradiated before the heat of the laser pulse irradiated immediately before that is sufficiently cooled. This is preferable because the thermal stress can be gradually increased.
【００２６】 このような短パルスレーザ光を用いた場
合には、１回の照射により加わるエネルギが小さいため
に、１回の照射では溝となる除去部及び蓄熱部はそれほ
ど形成されないが、同じ部分に２回、３回と続けて照射
するにしたがって、溝が深くなるとともに蓄熱部の熱容
量が大きくなり、数回照射したある状態で蓄熱部の熱に
起因する熱応力が溝以外の基板の残っている部分を割断
することができる。When such a short pulse laser beam is used, since the energy applied by one irradiation is small, the removal part and the heat storage part which become the groove are not formed so much by one irradiation, but the same part is formed. As the groove becomes deeper and the heat capacity of the heat storage part increases as it is irradiated twice, three times in succession, the thermal stress due to the heat of the heat storage part remains in the substrate other than the groove in a certain state after being irradiated several times. You can cut the part that is
【００２７】 すなわち、切断すべき基板の深さは溝が
深くなった分だけ少なくて済むために、割断に必要なエ
ネルギすなわち熱応力に寄与するエネルギの発生を最小
限に止めることができ、結果的にＲ面基板の割断面と接
するＲ面基板の表裏の部分におけるチッピング等の欠陥
を無くすことができるようになる。That is, since the depth of the substrate to be cut is reduced by the depth of the groove, generation of energy required for cleaving, that is, energy contributing to thermal stress can be minimized. Therefore, it becomes possible to eliminate defects such as chipping in the front and back portions of the R-plane substrate that are in contact with the split surface of the R-plane substrate.
【００２８】 なお、上述した投入エネルギ等の条件を
満足するパルスにあっては、そのスポット径を変化させ
ることが可能である。図５は、スポット径が加工深さと
投入エネルギに与える影響を示した説明図であるが、投
入エネルギは同じ場合には、スポット径の小さい場合
に、深い溝が形成されやすくなる。すなわち、エネルギ
は溝の形成に多く利用されて、蓄熱に寄与するエネルギ
はスポット径にほとんど依存していないと考えられる。
その結果、スポット径が１００μｍと２００μｍのいず
れの場合であっても、約０．０５Ｊ以上の投入エネルギ
が必要であることがわかる。さらに、スポット径を変化
させても、割断に必要な投入エネルギは変わらないと考
えられる。It is possible to change the spot diameter of a pulse that satisfies the conditions such as the input energy described above. FIG. 5 is an explanatory diagram showing the influence of the spot diameter on the working depth and the input energy. When the input energy is the same, a deep groove is likely to be formed when the spot diameter is small. That is, it is considered that the energy is mostly used for forming the groove, and the energy contributing to the heat storage hardly depends on the spot diameter.
As a result, it can be seen that an applied energy of about 0.05 J or more is necessary regardless of whether the spot diameter is 100 μm or 200 μm. Furthermore, even if the spot diameter is changed, it is considered that the input energy required for cleaving does not change.
【００２９】上述したエネルギ範囲にある短パルスＣＯ
2レーザを用いた場合に、良好な割断面を得ることがで
きるＲ面基板の厚さは、０．３ｍｍ〜０．５ｍｍの範囲
内のものであることが好ましい。しかし、短パルスＣＯ
2レーザのエネルギを増大させれば、厚さ１ｍｍ程度以
上のものでも、割断することは可能である。但し、短パ
ルスＣＯ2レーザのエネルギを増大させた場合には、レ
ーザ光の照射部分におけるＲ面基板材料の昇華もまた激
しくなることから、得られる割断面の性状は、Ｒ面基板
厚さが０．３ｍｍ程度のものの場合よりも悪くなる傾向
がある。Short pulse CO within the above energy range
When two lasers are used, the thickness of the R-plane substrate that can obtain a good fracture surface is preferably in the range of 0.3 mm to 0.5 mm. However, short pulse CO
2 If the energy of the laser is increased, it is possible to cleave even the thickness of about 1 mm or more. However, when the energy of the short pulse CO 2 laser is increased, the sublimation of the R-plane substrate material in the portion irradiated with the laser light also becomes more intense. It tends to be worse than in the case of about 0.3 mm.
【００３０】さて、本発明のレーザ割断方法において
は、短パルスＣＯ2レーザの照射によってＲ面基板に生
ずべき溝の深さは、基板厚さの１０％以上であることが
好ましく、さらに溝の深さは基板厚さの２０％以上５０
％以下の範囲内であることがより好ましい。レーザ光に
よって形成される溝の深さがこのような範囲よりも浅い
場合は、亀裂の発生と進展に必要なエネルギが蓄積され
難いために割断を行うことが困難となることがある。一
方、溝の深さを深くすると、割断面において基板材料が
昇華した面が広くなるために、平滑性が損なわれ易くな
ることがある。[0030] Now, in the laser cleaving method of the present invention, the depth of the short pulse CO 2 laser grooves which may arise in the R-plane substrate by irradiation of, preferably at least 10% of the substrate thickness, further groove 50 depth of more than 20% of the substrate thickness
It is more preferably within the range of% or less. When the depth of the groove formed by the laser beam is shallower than the above range is sometimes energy necessary for generation and development of a crack is difficult to perform cleaving to hard to be accumulated. On the other hand, when the depth of the groove, in order to face the substrate material is sublimed becomes wider in fractured, it may easily smoothness is impaired.
【００３１】 上述した条件に従って得られたＲ面基板
の割断面における亀裂真直度は±１０μｍの範囲内に納
めることができる。ここで、亀裂真直度とは、図６に示
すように、溝の底部からＲ面基板の対面へ向かって延び
る亀裂がレーザ光の走査中心軸からどの程度の距離範囲
に納まっているかを示すもので、この距離範囲が狭いほ
ど、亀裂が直線的に進展していることを示す。The crack straightness on the fractured surface of the R-plane substrate obtained according to the above-described conditions can be set within a range of ± 10 μm. Here, the crack straightness indicates, as shown in FIG. 6, how far the crack extending from the bottom of the groove toward the facing surface of the R-plane substrate is within the distance range from the central scanning axis of the laser light. The smaller the distance range, the more linearly the crack propagates.
【００３２】以上、本発明のレーザ割断方法について、
Ｒ面基板を主な例として説明してきたが、ｃ面基板につ
いても同様であり、さらに、本発明は上記実施の形態に
限定されるものではない。割断すべき基板としては、単
結晶サファイア基板であれば、主平面がＲ面又はｃ面で
はなく、他の結晶面を有するものであっても、レーザの
走査方向による割断面の性状が異なるといった加工上の
異方性を有する場合に、本発明のレーザ割断方法を利用
することができる。また、割断すべき基板が単結晶サフ
ァイア基板でなくとも、本発明のレーザの走査順序によ
り割断に異方性を有する場合にも利用することができ
る。The laser cutting method according to the present invention is as described above.
Having described the R-plane substrate as a primary example, similarly der true for the c-plane substrate is, further, the present invention is not name limited to the above embodiment. As the substrate to be fractured, if a single crystal sapphire substrate, rather than Shutaira plane R plane or c plane, even those having other crystal faces, the properties of the fractured by the laser scanning direction are different when having anisotropy on the work such as, Ru can use laser cleaving method of the present invention. Further, even if the substrate to be cleaved is not a single crystal sapphire substrate, it can also be used when the cleaving has anisotropy depending on the scanning order of the laser of the present invention.
【００３３】[0033]
【発明の効果】 上述の通り、本発明のレーザ割断方法
によれば、単結晶サファイア基板を、形状精度を良好に
維持しつつ、かつ生産効率よく割断することが可能とな
るという優れた効果を奏する。特に、単結晶サファイア
基板を用いた種々のチップ、素子等の作製等に有効に用
いられる。また、本発明は、単結晶サファイア基板の表
面に機能膜を形成した場合には、機能膜の割断面をその
まま利用することができるため、特に、青色ＬＥＤや青
色ＬＤの製造に有用である。[Effect of the Invention] described above as, according to the laser cleaving method of the present invention, a single crystal sapphire substrate, excellent in that while maintaining shape accuracy good, and it becomes possible to produce efficiently cleaving effect Play. Especially single crystal sapphire
Effectively used for manufacturing various chips, elements, etc. using substrates
Can be Further, the present invention is, in the case of forming a functional film on the surface of the single crystal sapphire substrate, it is possible to directly utilize the fractured faces functional film, in particular, is a perforated in the production of blue LED and a blue LD .
【図１】 本発明のレーザ割断方法の一の実施の形態を
示す説明図である。FIG. 1 is an explanatory diagram showing an embodiment of a laser cleaving method of the present invention.
【図２】 本発明のレーザ割断方法の一の実施の形態に
よって得られたサファイア基板の割断面の組織を示す写
真であり、図２（ａ）はａ平行割断面を示し、図２
（ｂ）はａ垂直割断面を示す。FIG. 2 of the present inventionLaser cutting methodoneofImplementationofIn form
YoWas obtainedA copy showing the structure of the fractured surface of the sapphire substrate.
True,Figure 2(A) shows a parallel split section,Figure 2
(B) shows a vertical split section.
【図３】 本発明のレーザ割断方法の一の実施の形態に
よって得られたサファイア基板の基板上面側から見た割
断面の組織を示す写真であり、図３（ａ）はａ平行割断
面の亀裂組織を示し、図３（ｂ）はａ垂直割断面の亀裂
組織を示す。FIG. 3 is a photograph showing a fractured face of the tissue as seen from the substrate top surface side of the sapphire substrate obtained I by <br/> to one embodiment of the laser cleaving method of the present invention, FIG. 3 ( FIG. 3 (b) shows a crack structure of a vertical split section, and FIG. 3 (b) shows a crack structure of a parallel split section.
【図４】 ＡｌＮ膜を形成したサファイア基板の割断面
の組織を示す写真であり、図４（ａ）はａ平行割断面を
示し、図４（ｂ）はａ垂直割断面を示す。[Figure 4] is a photograph showing the tissue fractured sapphire substrate provided with the AlN film, 4 (a) shows an a parallel fractured, FIG. 4 (b) shows the a vertical fractured.
【図５】 本発明において、スポット径が加工深さと投
入エネルギに与える影響を示す説明図である。FIG. 5 is an explanatory diagram showing the influence of the spot diameter on the working depth and the input energy in the present invention.
【図６】 亀裂真直度の定義を示す説明図である。FIG. 6 is an explanatory diagram showing the definition of crack straightness.
１…短パルスレーザ、２…Ｒ面単結晶サファイア基板
（Ｒ面基板）、３…割断予定面、４…溝、５…レーザ走
査中心線、６…基板、７…溝、８…亀裂、９…幅。1 ... Short pulse laser, 2 ... R-plane single crystal sapphire substrate (R-plane substrate), 3 ... Planned cleavage surface, 4 ... Groove, 5 ... Laser scanning center line, 6 ... Substrate, 7 ... Groove, 8 ... Crack, 9 …width.
フロントページの続き (56)参考文献 特開 平９−82587（ＪＰ，Ａ) 特開 昭58−44739（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/301 B23K 26/00 H01L 33/00 Continuation of the front page (56) Reference JP-A-9-82587 (JP, A) JP-A-58-44739 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) H01L 21 / 301 B23K 26/00 H01L 33/00
Claims (10)
数で表されるＲ面又はｃ面、及び側面としてａ面を有す
る平板状の単結晶サファイア基板に、前記単結晶サファ
イア基板に吸収されやすいレーザ光を照射して、前記単
結晶サファイア基板を割断する方法であって、前記レーザ光を照射し得るレーザを一の前記主平面と前
記一の主平面及び前記ａ面に垂直に想定した前記単結晶
サファイア基板の割断予定面とが交差する交差線に対応
して走査させつつ前記レーザ光を前記交差線に沿って一
回照射することによって、前記単結晶サファイア基板の
前記レーザ光を照射された部分を加熱、昇華させて、前
記単結晶サファイア基板の前記割断予定面に沿って、所
定の深さの有底の溝を形成して前記単結晶サファイア基
板を前記割断予定面の一部で分断するとともに、前記溝
の底部を加熱して蓄熱させ、この蓄熱された熱によって
前記割断予定面の残部に沿って前記溝の底部と前記一の
主平面とは反対側の他の主平面との間に熱勾配を発生さ
せ、前記熱勾配に起因する熱応力によって前記単結晶サ
ファイア基板を前記割断予定面の残部でさらに分断し
て、前記単結晶サファイア基板を一工程で割断する こと
を特徴とするレーザ割断方法。 Mirror finger in trigonal as claimed in claim 1] Shutaira surface
R surface or c-plane is represented by the number, and the plate-shaped single crystal sapphire substrate having a surface as a side, the single crystal Safa
By irradiating easily absorbed into ear substrate laser beam, wherein a method of cleaving a single-crystal sapphire substrate, before the laser one of the main planes capable of irradiating the laser beam
The single crystal assumed to be perpendicular to the main plane and the a-plane.
Corresponds to the intersecting line that intersects the planned cleavage surface of the sapphire substrate
The laser beam is scanned along the intersection line while scanning
By irradiating the single crystal sapphire substrate
The portion irradiated with the laser beam is heated and sublimated,
Along the planned cleavage plane of the single crystal sapphire substrate,
The single crystal sapphire base is formed by forming a bottomed groove having a constant depth.
The plate is divided at a part of the planned cutting surface and the groove is formed.
The bottom of the is heated to store heat, and by this stored heat
The bottom of the groove and the one along the remainder of the surface to be cleaved
A thermal gradient is generated between the principal plane and the other principal plane on the opposite side.
The single crystal support due to the thermal stress caused by the thermal gradient.
Further divide the fire substrate at the remaining part of the planned cutting surface.
And then cutting the single crystal sapphire substrate in one step .
平面及び前記ａ面に垂直に想定した前記単結晶サファイ
ア基板の割断予定面で割断した後に、割断された前記単
結晶サファイア基板を、前記一の主平面に垂直で、かつ
前記ａ面に平行に想定した第二の割断予定面で同様にさ
らに割断して、前記単結晶サファイア基板を所定形状に
割断することを特徴とする請求項１に記載のレーザ割断
方法。 2. The single crystal sapphire substrate is the one main
The single crystal sapphire assumed perpendicular to the plane and the a-plane
A) After cutting at the planned cutting surface of the substrate,
A crystalline sapphire substrate perpendicular to the one main plane, and
Do the same for the second planned cleavage plane that is assumed to be parallel to the a-plane.
The single crystal sapphire substrate is cut into a predetermined shape.
The laser cleaving according to claim 1, wherein the cleaving is performed.
Method.
Ｏ 2 レーザであることを特徴とする請求項１又は２に記
載のレーザ割断方法。 3. A laser capable of irradiating the laser light is C
The O 2 laser according to claim 1 or 2, wherein the laser is an O 2 laser.
Laser cutting method of mounting.
上に機能膜が形成されていることを特徴とする請求項１
〜３のいずれか一項に記載のレーザ割断方法。4. The method of claim 1, characterized in that the functional film on the main flat surface of the single crystal sapphire substrate is formed
4. The laser cleaving method according to any one of 3 to 3 .
ァイア基板が、ＳＡＷフィルタ、青色ＬＥＤ又は青色Ｌ
Ｄとして用いられるものであること特徴とする請求項４
に記載のレーザ割断方法。Wherein said single crystal sapphire substrate on which the functional film is formed, SAW filter, a blue LED or a blue L
5. It is used as D. 5.
Laser cleaving method described in.
Ｈｚ以上、パルス幅を３００μｓｅｃ以下、投入エネル
ギを０．０５〜０．４Ｊの範囲内とすることを特徴とす
る請求項３〜５のいずれか一項に記載のレーザ割断方
法。 6. The processing frequency of the CO 2 laser is 500.
6. The laser cleaving method according to claim 3 , wherein the pulse width is not less than Hz, the pulse width is not more than 300 [mu] sec, and the input energy is in the range of 0.05 to 0.4J.
３ｍｍ〜０．５ｍｍの範囲内であることを特徴とする請
求項１〜６のいずれか一項に記載のレーザ割断方法。7. The thickness of the single crystal sapphire substrate 0.
Laser cleaving method according to any one of claims 1 to 6, characterized in that in the range of 3Mm～0.5Mm.
って前記単結晶サファイア基板に形成する溝の深さが、
前記単結晶サファイア基板の基板厚さの１０％以上であ
ることを特徴とする請求項３〜７のいずれか一項に記載
のレーザ割断方法。8. The depth of the groove you formed on the single crystal sapphire substrate by laser irradiation of the CO 2 laser,
It is 10% or more of the substrate thickness of the said single crystal sapphire substrate, The laser cleaving method as described in any one of Claims 3-7 characterized by the above-mentioned.
基板の基板厚さの２０％以上５０％以下であることを特
徴とする請求項８に記載のレーザ割断方法。9. The depth of the groove, the laser cleaving method according to claim 8, wherein the 50% or less than 20% of the substrate thickness of the single crystal sapphire substrate.
よって前記単結晶サファイア基板を前記割断予定面で割
断することによって前記単結晶サファイア基板に生ずる
割断面の亀裂真直度が±１０μｍの範囲内にあることを
特徴とする請求項３〜９のいずれか一項に記載のレーザ
割断方法。10. split said single crystal sapphire substrate by the expected splitting surface by the laser irradiation of the CO 2 laser
10. The laser cleaving method according to any one of claims 3 to 9 , wherein a crack straightness of a fractured surface generated in the single crystal sapphire substrate by cutting is within a range of ± 10 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17216398A JP3532100B2 (en) | 1997-12-03 | 1998-06-04 | Laser cleaving method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33280797 | 1997-12-03 | ||
| JP9-332807 | 1997-12-03 | ||
| JP17216398A JP3532100B2 (en) | 1997-12-03 | 1998-06-04 | Laser cleaving method |
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| Publication Number | Publication Date |
|---|---|
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| JP3532100B2 true JP3532100B2 (en) | 2004-05-31 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17216398A Expired - Fee Related JP3532100B2 (en) | 1997-12-03 | 1998-06-04 | Laser cleaving method |
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| JPH11224866A (en) | 1999-08-17 |
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