CN110625267A - Method for processing sapphire substrate LED wafer and laser device - Google Patents
Method for processing sapphire substrate LED wafer and laser device Download PDFInfo
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- CN110625267A CN110625267A CN201910780535.8A CN201910780535A CN110625267A CN 110625267 A CN110625267 A CN 110625267A CN 201910780535 A CN201910780535 A CN 201910780535A CN 110625267 A CN110625267 A CN 110625267A
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- 238000005520 cutting process Methods 0.000 claims abstract description 136
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- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- 235000012431 wafers Nutrition 0.000 claims description 139
- 238000001816 cooling Methods 0.000 claims description 30
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- 239000003595 mist Substances 0.000 claims description 10
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- 238000007493 shaping process Methods 0.000 abstract description 7
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- Optics & Photonics (AREA)
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- Computer Hardware Design (AREA)
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Abstract
The invention provides a method for processing a sapphire substrate LED wafer and a laser device, wherein the method for processing the sapphire substrate LED wafer comprises the following steps: scribing, namely scribing on the surface of the sapphire wafer by using scribing laser to form an initial crack; cutting, heating the surface of the sapphire along the initial crack by using infrared laser; the LED wafer sapphire surface is cooled along the initial crack. The infrared laser heating assembly includes: the infrared laser device comprises an infrared laser device, an infrared beam first reflector group, an infrared beam expander group, a beam shaping assembly and an infrared beam second reflector group. Through scribing laser on the surface of the LED sapphire wafer, the initial crack formed by scribing is heated by infrared laser, and then the heating area is cooled, so that the LED sapphire wafer cracks along the initial crack under the combination of tensile stress and compressive stress, the cutting quality is better, the cutting end face is smooth, the light can pass through the cutting end face, the edge strength is increased, and the light emitting efficiency and the service life of an LED chip are improved.
Description
Technical Field
The invention belongs to the technical field of LED chips, and particularly relates to a method for processing a sapphire substrate LED wafer and a laser device.
Background
In recent years, a sapphire substrate LED chip has been developed in the future as a new generation illumination light source in the 21 st century because of its advantages of low energy consumption, high luminous efficiency, long life, environmental protection, cold light source, fast response time, and being capable of being used under various severe conditions. With the aging of the III-V semiconductor process, the development of LED chips is continuously moving towards higher efficiency and higher brightness. With the wider application of the GaN-based LED, how to improve the luminous efficiency of the GaN-based LED becomes a focus of attention, factors influencing the luminous efficiency of the LED mainly include internal quantum efficiency and external quantum efficiency, and the improvement of the external quantum efficiency becomes one of the key technologies of the current semiconductor illumination LED.
Because sapphire has excellent performances in the aspects of transparency, thermal conductivity, stability and GaN lattice matching, sapphire is generally used as a GaN-based LED chip substrate in the industry at present, a GaN layer is generally only 3-5um, the thickness of the sapphire substrate is basically 400-500um, and the thickness is still about 100um after thinning, so that the sapphire is cut when the GaN-based LED chip is cut, but the Mohs hardness of the sapphire is 9, which is only inferior to diamond, and is a material which is quite difficult to process.
Sapphire belongs to brittle materials, has a better thermal expansion coefficient of 5.8x10-6The absorption rate of the material to the infrared laser of 9.6/10.6um wave band is high, which provides possibility for laser stress processing.
The traditional processing mode is as follows: conventional wafer dicing is commonly performed by diamond saw dicing, but the kerf width is limited by the thickness of the cutting edge and the brittleness of the diamond saw blade. In addition, the wide bandgap of typical substrate materials (e.g., sapphire, gan, sic, si, etc.) used in the fabrication of wafers means that these materials are easily broken to cause poor insulation and severe leakage of the LED devices, thereby seriously affecting the yield of the LEDs. With the rapid development of LED applications, chip fabrication density has been increasing to meet cost requirements and yield requirements, scribe lines reserved for dicing have been reduced to 10-20 μm, and the core grain size has been smaller than 0.2 × 0.2 mm. This presents a significant challenge to conventional diamond saw dicing: on one hand, the hardness of hard and brittle materials such as sapphire, silicon carbide and the like is close to that of diamond; on the other hand, the minimum thickness of the diamond saw is about 20 μm, which exceeds the width of the scribe line, and the cutting force of the diamond saw is seriously insufficient, so that the tool wear rate is unacceptable for industrial production.
At present, the mainstream processing mode is as follows: at present, laser processing becomes a mainstream processing mode, common laser cutting is divided into surface cutting and internal cutting (namely invisible cutting), laser with a certain wavelength is focused on the surface or the inside of a wafer, a large amount of heat is released in a very short time, materials are melted and even gasified, cutting traces are formed by matching with relative movement of a laser head or an object, and the purpose of cutting is achieved.
Surface cutting: generally, 355nm or 266nm scribing laser is adopted, the cutting depth is generally within 50um, if the cutting depth is deepened, the laser power is required to be increased or the scribing times are required to be increased, so that the manufacturing cost is increased and the cutting efficiency is influenced, in addition, during surface cutting processing, sputtering objects in a groove often splash, recasting layers are formed on two sides of the surface of the groove, generally gluing protection is required, and the process flow is as follows: the process of chip mounting, protective liquid coating, laser grooving, cleaning, splitting and the like is complicated, the efficiency is reduced when a thicker LED wafer (more than 150um in thickness) is processed, more importantly, the area for damaging the sapphire lattice structure is increased along with the width of the laser cutting modified layer in surface cutting, the LED luminous efficiency is greatly reduced, and the chip leakage is easily caused.
Invisible cutting: generally, 1064nm infrared light or 532nm green light is adopted to form a single light spot or multiple light spots for internal processing, laser is acted on a certain depth inside a chip, and laser scratches, namely discontinuous micro 'explosion spots' are formed along a cutting path.
Generally, single-light-spot stealth cutting can only be performed on a relatively thin LED wafer with the thickness of 80-150 microns, a modified layer is formed by focusing and scribing at a position which is away from the surface 1/3, and then separation is realized by adopting a film expanding or mechanical splitting mode, although a gluing process is avoided, the mode cannot be used for processing a thicker LED wafer because the depth of the single-light-spot modified layer is generally 10-80 microns, the cracking tendency is limited, and inclined cracking or even bicrystal problems are easily caused during mechanical splitting.
The multiple light spots are cut implicitly, the overall cutting depth is often larger than the thickness of a 1/2 chip, although the processing efficiency is improved, the depth of a modified layer is increased, mechanical splitting is not needed, a film can be separated through film expansion, and the problems of inclined cracking and double crystals are avoided, the increase of the modified layer on the side surface of the LED wafer also means that the area for damaging a sapphire crystal lattice structure is increased, the luminous efficiency of the LED is influenced, and chip electric leakage is easy to generate.
Both the surface cutting and the invisible cutting are the modes that laser is directly stripped or modified on the LED chip, the width of a modified layer is often close to the thickness of 1/3-1/2 of the LED chip or larger, and even if technological parameters are optimized, the problems of sputtering, point collapse, inclined crack, double crystal and the like are reduced.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a method for processing a sapphire substrate LED wafer and a laser device, which can effectively reduce the depth of a modified layer, and crack by utilizing stress, so that more than 99% of the end surface of an LED wafer chip is in a mirror surface effect, light can pass through the LED wafer chip easily, and the service life of the LED wafer chip is prolonged.
In order to solve the technical problem, the invention is realized in such a way that a method for processing a sapphire substrate LED wafer comprises: scribing: scribing on the surface of the LED wafer sapphire by adopting laser or a hard cutter wheel, and forming initial cracks with the depth within 5-100 um on the surface of the LED wafer sapphire; cutting: heating the surface of the LED wafer sapphire along the extending direction of the initial crack by using infrared laser, so that a heated area on the surface of the LED wafer sapphire forms tensile stress distribution; and cooling the heated LED wafer sapphire surface along the extension direction of the corresponding initial crack, forming compressive stress distribution in a cooled area of the LED wafer sapphire surface, and enabling the initial crack to downwards expand along the longitudinal direction of the LED wafer sapphire to form a longitudinal expansion area until the wafer is separated, so that the sapphire substrate LED wafer cracks along the corresponding initial crack.
Further, the scribing laser has a wavelength within 100nm to 1064 nm.
Further, the wavelength of the infrared laser is within 0.1um-10.6 um.
Further, water mist is sprayed on the heated area of the sapphire surface of the LED wafer during cooling.
Further, during processing, after scribing and cutting are performed along a first direction of the surface of the LED wafer sapphire, scribing and cutting are performed along a second direction of the surface of the LED wafer sapphire, wherein the second direction is perpendicular to the first direction, and cutting lines in the same direction are arranged at equal intervals.
Further, in the process of scribing and cutting along the first direction or the second direction, firstly scribing and cutting the center line of the sapphire of the LED wafer in the corresponding processing direction to form a first part and a second part; and according to the number of the cutters required to be cut in the direction, scribing and cutting the first part or the second part from the center line to two sides by using the cutting allowance of 32 cutters or 64 cutters until the rest part is less than the cutting allowance of 32 cutters, and forming a corresponding initial cutting block after cutting.
Further, the initial cutting block with the cutting allowance of 32 or 64 knives is divided into bisected parts, quartered parts and eighted parts in sequenceScribing and cutting at sixteen equi-divisions, thirty-two equi-divisions and sixty-four equi-divisions; for the initial cutting block with less than 32 cutting allowance, the cutting allowance is increased by 2nScribing and dividing the cutting allowance (n is a positive integer) until the cutting allowance can not be continuously divided to meet the requirement of 2nFor a cutting margin of 2nThe blocks are scribed and cut at bisected, quartered, eighted and sixteen parts.
Further, a laser device is provided for implementing the method for processing the sapphire substrate LED wafer, which includes: the device comprises a device body, a laser scribing component, an infrared laser heating component and a cooling structure; the device body is provided with a rotary working platform, and the sapphire substrate LED wafer is fixed on the rotary working platform; the laser scribing component is assembled on the device body and used for generating scribing laser to scribe on the surface of the LED wafer sapphire so as to form an initial crack with the depth within 5-20 um on the surface of the LED wafer sapphire; the infrared laser heating assembly is assembled on the device body and used for generating infrared laser to heat the surface of the LED wafer sapphire in the rear direction of the scribing laser scribing direction, so that a tensile stress distribution is formed on a heated area of the surface of the LED wafer sapphire; the cooling structure is assembled on the infrared laser heating assembly and used for cooling a heated area on the sapphire surface of the LED wafer, pressure stress distribution is formed on the cooled area on the sapphire surface of the LED wafer, the initial cracks are made to downwards expand along the longitudinal direction of the sapphire of the LED wafer until the wafer is separated, and the LED wafer with the sapphire substrate is made to crack along the corresponding initial cracks.
Further, the laser scribing assembly comprises: the scribing laser device comprises a scribing laser device, a scribing laser beam expanding lens group and a scribing laser beam reflector group, wherein the scribing laser device is used for generating scribing laser, the scribing laser beam expanding lens group is used for expanding and collimating the scribing laser, and the scribing laser passes through the scribing laser beam expanding lens group and then is reflected to a scribing position by the scribing laser beam reflector group; the infrared laser heating assembly includes: infrared laser, the first speculum group of infrared beam, infrared laser beam expander group, beam plastic subassembly and infrared beam second mirror group, infrared laser that infrared laser produced by the first speculum group of infrared beam reflects extremely infrared laser beam expander group, infrared laser beam expander group is used for expanding the beam collimation to infrared laser, beam plastic subassembly is used for adjusting infrared laser beam's energy distribution, infrared laser passes through in proper order infrared laser beam expander group with behind the beam plastic subassembly by infrared beam second mirror group reflects to heating the position.
Further, the cooling structure adopts a water mist generator, and the water mist is sprayed out of the cooling structure to cool the heated area on the sapphire surface of the LED wafer.
Compared with the prior art, the method for processing the LED wafer with the sapphire substrate and the laser device have the advantages that:
according to the invention, the surface of the LED sapphire wafer is scribed by using laser or a hard cutter wheel, the initial crack formed by scribing is heated by using infrared laser, tensile stress distribution is formed on the heated area of the surface of the LED sapphire wafer, then the heated area is cooled, and compressive stress distribution is formed in the cooled area of the surface of the LED sapphire wafer, so that the LED sapphire wafer is cracked along the initial crack under the combination of tensile stress and compressive stress, the modified layer depth can be effectively reduced, the cracking efficiency by using stress is higher, more than 99% of the end surfaces of the LED wafer chips are in a mirror surface effect, the cutting quality is better, the light can be favorably passed through, the influence on the strength of the single LED chip is reduced by the smaller modified layer depth, the expansion of micro cracks caused by the heating of the LED chips can be slowed down, and the service life of the LED chip is prolonged.
Drawings
FIG. 1 is a schematic diagram of a laser device according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of the cutting principle of the present invention;
FIG. 3 is a schematic view of the processing method in example 1 of the present invention;
fig. 4 is a diagram illustrating the effect of the die-cutting end surface in the embodiment of the present invention. .
In the drawings, each reference numeral denotes: 001. a Gaussian spot of purple outer circle; 002. infrared elliptic Gaussian spots; 003. initiating a crack; 004. water spotting; 005. a longitudinal expansion region; 006. LED wafer sapphire; 1. a laser scribing assembly; 11. a scribing laser; 12. scribing a laser beam expander set; 13. a scribing laser beam mirror group; 2. an infrared laser heating assembly; 21. an infrared laser; 22. a first infrared beam reflector group; 23. an infrared laser beam expander set; 24. a beam shaping component; 25. the infrared beam second reflector group; 3. a cooling structure; 4. and rotating the working platform.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example (b):
in this embodiment, with reference to fig. 1 and fig. 2, a method for processing a sapphire substrate LED wafer includes: scribing: scribing on the surface of the LED wafer sapphire 006 by adopting laser or a hard cutter wheel, and forming an initial crack 003 with the depth within 5-100 um on the surface of the LED wafer sapphire 006; cutting: heating the surface of the LED wafer sapphire 006 along the extending direction of the initial crack 003 by using infrared laser to form tensile stress distribution in a heated region of the surface of the LED wafer sapphire 006; and cooling the surface of the heated LED wafer sapphire 006 along the extending direction of the corresponding initial crack 003 to form a compressive stress distribution in the cooled region of the surface of the LED wafer sapphire 006, so that the initial crack 003 is expanded downwards along the longitudinal direction of the LED wafer sapphire 006 to form a longitudinal expansion region 005 until the wafer is separated, and the sapphire substrate LED wafer is cracked along the corresponding initial crack 003.
The invention lines on the surface of the LED sapphire wafer by using laser or a hard cutter wheel, then heats the initial crack 003 formed by the line by using infrared laser, forms tensile stress distribution on the heated area on the surface of the LED sapphire 006, then cools the heated area, forms compressive stress distribution on the cooled area on the surface of the LED sapphire 006, leads the LED sapphire wafer to crack along the initial crack 003 under the combination of the tensile stress and the compressive stress to form a longitudinal expansion area 005, can effectively reduce the depth of a modified layer (the line-scribed laser line depth), has higher splitting efficiency by using the stress, leads more than 99 percent of end surfaces of the LED wafer chips to have mirror surface effect by combining a graph 4, has better cutting quality, is beneficial to light passing, reduces the influence on the strength of a single LED chip by using smaller depth of the modified layer, and can slow down the expansion of microcracks caused by the heating of the LED chips, thereby improving the service life thereof.
Specifically, when the initial crack is produced by the scribing laser, the laser wavelength of the scribing laser is within 100nm-1064nm, preferably 190nm-355nm, and the depth of the initial crack 003 formed by scribing is preferably 5um-20 um. In other embodiments, a hard cutter wheel or other mechanical means may be used to create the initial crack.
The wavelength of the infrared laser is within 0.1um-10.6um, preferably 9.3-10.6um, in this embodiment, the infrared laser of 10.6um is used, in other embodiments, the infrared laser of 9.6um, 9.8um, 10.3um, etc. can also be used. Of course, the heating is not limited to the infrared laser, and other heating methods may be used, and any method capable of heating the surface of the LED wafer sapphire 006 is within the protection scope of the present invention.
In this embodiment, during cooling, water mist is sprayed on the heated area on the surface of the LED wafer sapphire 006 to form a water spot 004, scribing laser is used to scribe the surface of the LED wafer sapphire 006, infrared laser is used to heat the surface of the LED wafer sapphire 006 after the scribing laser, then water mist is used to cool the surface of the LED wafer sapphire 006 after the infrared laser is used, and by combining the characteristics of the brittle sapphire material and the good thermal expansion coefficient of 5.8x10-6/K, according to the physical characteristics of expansion with heat and contraction with cold, the initial crack 003 can be expanded along the longitudinal direction of the LED wafer, therefore, the purpose of separating the wafer chips is achieved, the LED wafer chips with the sapphire substrates with the thickness of 80-350 um can be processed by adopting the method, the processing thickness and efficiency are improved, the damage degree of the sapphire lattice structure is reduced, and the LED luminous efficiency is improved. In other embodiments, other cooling methods may be adopted, including cooling gas, liquid, etc., such as alcohol, specially processed cold air, etc., and the method is not limited herein, and any method capable of cooling the surface of the LED wafer sapphire 006 is within the protection scope of the present invention.
The method is not limited to the cutting of the wafer with the sapphire substrate, and other brittle materials can be cut, such as: glass, ceramic, silicon, etc.; for a specific brittle material with a large thermal expansion coefficient, stress cutting is realized by preferably marking to manufacture an initial crack, laser heating and cooling, and under a certain condition, only marking to manufacture the initial crack and heating can be carried out to achieve the purpose of stress cutting.
Because the wafer chips are separated by mainly relying on stress cutting, the influence of the sizes of the excess materials on the two sides of the materials is large in a certain size range during stress cutting processing, and when the sizes are small, if the materials on the two sides are asymmetric, the verticality of stress splitting is easily influenced, so that the appearance and section taper of the wafer chips are influenced, and therefore during processing, the requirements for basically matching the sizes of the excess materials on the two sides are met as much as possible.
In this embodiment, first, after scribing and cutting along the first direction of the surface of the LED wafer sapphire 006 are completed, scribing and cutting along the second direction perpendicular to the first direction of the surface of the LED wafer sapphire 006 are performed, and the cutting lines in the same direction are arranged at equal intervals. Namely, the transverse cutting is finished and then the longitudinal cutting is carried out. The initial cracks can be scribed on the whole line during cutting in the first direction, or short lines can be scribed at the initial position independently, the scribing length is 0.01-10mm, preferably 0.1-5mm, such as 0.2mm, 0.5mm, 1mm, 3mm and the like, the scribing length can be optimized according to the actual situation of materials, in order to prevent the cutting edge of the wafer from being arc-shaped, the lines are scribed at the head and the tail of a single cutting channel to prevent the oblique cracks caused by uneven stress distribution, so that more than 99% of the middle area of the wafer is subjected to lossless cutting; the whole line is scribed to make the initial crack in the second direction, 10-20um deep, because the separation has been achieved in the first direction and the stress cannot be transferred continuously in the second direction.
Secondly, in the process of scribing and cutting along the first direction or the second direction, the center line of the LED wafer sapphire 006 is firstly scribed and cut in the corresponding process direction to form a first portion and a second portion; according to the number of the knives needed to be cut in the direction, the first part or the second part is scribed and cut from the central line to two sides by the cutting allowance of 32 knives or 64 knives (the number of the knives needed to be cut in the part is counted from the central line to two sides, the head end is not counted, and the tail end is counted) until the rest part is less than the cutting allowance of 32 knives, and a corresponding initial cutting block is formed after cutting. Since the area of the LED wafer sapphire 006 is large when the initial dicing block is formed, the LED wafer can be divided by a 32-blade or 64-blade dicing margin, and the influence of the perpendicularity and the appearance and section taper of the wafer chip during stress cleaving is small.
Thirdly, marking and cutting the initial cutting block with the cutting allowance of 32 or 64 cutters according to the rule of bisection, quartering, eighty, sixteen, thirty-two and sixty-four equi-divisions; for the initial cutting block with less than 32 cutting allowance, the cutting allowance is increased by 2nScribing and dividing the cutting allowance (n is a positive integer) until the cutting allowance can not be continuously divided to meet the requirement of 2nFor a cutting margin of 2nThe blocks are scribed and cut at bisected, quartered, eighted and sixteen parts. At 2nWhen the cutting allowance is used for cutting the block, the whole block is only cut into two parts or three parts as much as possible, and the residual cutting allowance of each part is equal as much as possible.
There is provided a laser apparatus for implementing the method of processing a sapphire substrate LED wafer as above, including: the device comprises a device body, a laser scribing component 1, an infrared laser heating component 2 and a cooling structure 3; the device body is provided with a rotary working platform 4, and the sapphire substrate LED wafer is fixed on the rotary working platform 4; the laser scribing component 1 is assembled on the device body, and the laser scribing component 1 is used for generating scribing laser to scribe on the surface of the LED wafer sapphire 006 so as to form an initial crack 003 with the depth within 5um-20um on the surface of the LED wafer sapphire 006; the infrared laser heating assembly 2 is assembled on the device body, and the infrared laser heating assembly 2 is used for generating infrared laser to heat the surface of the LED wafer sapphire 006 behind the scribing laser scribing direction, so that the heated area on the surface of the LED wafer sapphire 006 forms tensile stress distribution; cooling structure 3 assembles on infrared laser heating component 2, and cooling structure 3 is used for cooling the heated region on LED wafer sapphire 006 surface, forms the compressive stress distribution at the cooled region on LED wafer sapphire 006 surface, makes initial crack 003 expand downwards along the vertical of LED wafer sapphire 006, and until the wafer separation makes sapphire substrate LED wafer split along corresponding initial crack 003.
The laser scribing assembly 1 includes: the laser scribing device comprises a scribing laser 11, a scribing laser beam expander set 12 and a scribing laser beam reflector set 13, wherein the scribing laser 11 is used for generating scribing laser, the scribing laser beam expander set 12 is used for expanding and collimating the scribing laser, and the scribing laser passes through the scribing laser beam expander set 12 and then is reflected to a scribing position by the scribing laser beam reflector set 13; specifically, in this embodiment, the 355nm scribing laser 11 is used as an ultraviolet laser source, the emergent light spot of the scribing laser 11 passes through the scribing laser beam expander set 12 and then is focused to form an ultraviolet round gaussian light spot 001 with highly concentrated energy, the photon energy of the ultraviolet round gaussian light spot is 3.45eV, the energy is higher than the chemical bond binding energy of sapphire, the surface of the sapphire can be rapidly ablated or even gasified, and the initial crack 003 can be produced on the surface of the LED wafer sapphire 006 by scribing along a cutting path through relative movement.
The infrared laser heating module 2 includes: infrared laser 21, the first speculum group 22 of infrared beam, infrared laser beam expander set 23, beam shaping subassembly 24 and infrared beam second mirror set 25, the infrared laser that infrared laser 21 produced is reflected to infrared laser beam expander set 23 by the first speculum group 22 of infrared beam, infrared laser beam expander set 23 is used for expanding the beam collimation to infrared laser, beam shaping subassembly 24 is used for adjusting infrared laser beam's energy distribution, thereby obtain the infrared laser facula of preferred energy distribution, infrared laser is reflected to heating the position by infrared beam second mirror set 25 after infrared laser beam expander set 23 and beam shaping subassembly 24 in proper order. In this embodiment, laser device is last to be provided with two sets of infrared laser heating element 2 that are located the marking off direction both sides respectively, and all adopt 10.6 um's infrared laser 21, through expanding beam collimation and the shaping of beam shaping subassembly 24, form the oval gaussian spot 002 of infrared of workable sapphire after the focus, to the infrared laser spot shape of heating, be not limited to oval facula, also can be other shapes, like circular, bar or even the triangle-shaped facula that special treatment had, as long as can heat, when heating, the oval gaussian spot 002 of infrared is located the both sides of the initial crackle 003 that LED wafer sapphire 006 corresponds on the surface respectively. In other embodiments, the infrared laser heating assemblies 2 may be arranged in one group, three groups, four groups, etc. according to actual needs.
The cooling structure 3 adopts a water mist generator, and the water mist sprayed by the cooling structure 3 cools the heated area on the surface of the LED wafer sapphire 006. In this embodiment, the laser device is provided with two cooling structures 3, and when cooling, the two cooling structures 3 are respectively located on two sides behind the heating direction of the infrared elliptical gaussian spot 002. In other embodiments, the cooling structures 3 may be arranged in one group, three groups, four groups, etc. according to actual needs. Example 1:
with reference to FIG. 3, an LED wafer chip with 129-knife (-64# - +64# -) in both transverse and longitudinal directions is cut
Positioning the LED wafer chip on a rotary working platform 4, and cutting the most middle position 0# in a first direction to form a first part and a second part;
cutting the first part along 64#, 32#, so that the first part forms two initial cutting blocks with 32-blade cutting allowance;
cutting the initial cutting block according to the rule of a bisector, a quartering, an octatomic, a sixteen halving and a thirty-two halving, namely sequentially cutting: (16#, 48#), (56#, 40#, 24#, 8#), (4#, 12#, 20#, 28#, 36#, 44#, 52#, 60#), (62#, 58#, 54#, 6#, 2#) and (1#, 3#, 63#, 65#), so that the first part is cut, and in the embodiment, the cutting at the same equal division is not in sequence;
cutting the second portion according to the pattern of the first portion;
the rotary working platform 4 rotates 90 degrees, and the LED wafer chips are cut in the second direction according to the rule of cutting the first direction, so that the cutting and the separation of all the wafer chips are completed.
Example 2:
cutting an LED wafer chip with 127 knifes (-63# + -63 #) transversely and longitudinally
Positioning the LED wafer chip on a rotary working platform 4, and cutting the most middle position 0# in a first direction to form a first part and a second part;
cutting the first part along 32#, so that the first part forms an initial cutting block with a cutting allowance of 32 knives and an initial cutting block with a cutting allowance of 31 knives;
for the initial cutting block with the cutting allowance of 32 knives, cutting the initial cutting block according to the rule of bisector, quartering, sixteen and thirty-two parts, namely sequentially cutting: (16#, 48#), (56#, 40#, 24#, 8#), (4#, 12#, 20#, 28#, 36#, 44#, 52#, 60#), (62#, 58#, 54#, a.directalge.no. 6#, 2#) and (1#, 3#, a.directalge.no. 63#, 65 #); for the initial cutting block with 31-blade cutting margin, the initial cutting block is divided into 24(16) blade, 23(8) blade, 22(4) blade, 21(2) blade and 1 (optionally discarded), that is, sequentially cut: 48#, 56#, 60# and 62#, then sequentially dividing each block according to the rule of bisector, quartering and sixteen bisectors, thereby completing the cutting of the first part, wherein in the embodiment, the cutting of the same bisector is not in sequence;
cutting the second portion according to the pattern of the first portion;
the rotary working platform 4 rotates 90 degrees, and the LED wafer chips are cut in the second direction according to the rule of cutting the first direction, so that the cutting and the separation of all the wafer chips are completed.
Example 3: when the number of knives in the corresponding cutting direction is even, the LED wafer chip is firstly divided into two parts (m is the total number of knives in the corresponding direction) with cutting allowances of m/2 and (m-2)/2, and then the LED wafer chip is cut by referring to the modes in examples 1 and 2;
example 4: when the number of knives in the two cutting directions is different, the cutting is performed in the manner of reference examples 1, 2 and 3.
The processing method is not limited to the above half-cutting method, and when the size of the wafer particles is large, the wafer particles may be processed one by one.
For the above cutting method, the minimum wafer grain range processed is ensured to be more than 0.2mmx0.2mm, namely, the distance between adjacent cutting lines is more than or equal to 0.2mm, the thickness is within 50-150um, the stress application becomes difficult because the grain size is too small, in addition, the minimum processable size is related to the wafer thickness, the thinner wafer can be cut into smaller size (the experiment verifies that the chip size processed at the minimum is 0.15x0.15mm, and the wafer of the LED sapphire substrate with the thickness of 90 um).
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A method for processing a sapphire substrate LED wafer is characterized by comprising the following steps:
scribing: scribing on the surface of the LED wafer sapphire (006) by adopting scribing laser or a hard cutter wheel, and forming an initial crack (003) with the depth within 5um-100um on the surface of the LED wafer sapphire (006);
cutting: heating the surface of the LED wafer sapphire (006) along the extending direction of the initial crack (003) by using infrared laser, so that the heated area of the surface of the LED wafer sapphire (006) forms tensile stress distribution; cooling the heated LED wafer sapphire (006) surface along the extension direction of the corresponding initial crack (003), forming a compressive stress distribution in the cooled region of the LED wafer sapphire (006) surface, and expanding the initial crack (003) downwards along the longitudinal direction of the LED wafer sapphire (006) to form a longitudinal expansion region (005) until the wafer is separated, so that the sapphire substrate LED wafer cracks along the corresponding initial crack (003).
2. The method of claim 1, wherein the scribing laser has a wavelength within a range of 100nm to 1064 nm.
3. The method of claim 1, wherein the infrared laser has a wavelength within a range of 0.1um to 10.6 um.
4. The method for processing the sapphire substrate LED wafer of claim 1, wherein water mist is sprayed on the heated area of the surface of the sapphire (006) of the LED wafer during cooling.
5. The method for processing the sapphire substrate LED wafer of any one of claims 1-4, wherein during processing, after scribing and cutting along a first direction of the surface of the LED wafer sapphire (006) are completed, scribing and cutting along a second direction perpendicular to the first direction of the surface of the LED wafer sapphire (006) are performed, and the cutting lines in the same direction are arranged at equal intervals.
6. The method of processing the sapphire substrate LED wafer of claim 5, wherein in the process of scribing and cutting along the first direction or the second direction, the center line of the LED wafer sapphire (006) is first scribed and cut in the corresponding processing direction to form a first portion and a second portion;
and according to the number of the cutters required to be cut in the direction, scribing and cutting the first part or the second part from the center line to two sides by using the cutting allowance of 32 cutters or 64 cutters until the rest part is less than the cutting allowance of 32 cutters, and forming a corresponding initial cutting block after cutting.
7. The method of processing the sapphire substrate LED wafer of claim 6, wherein the initial cutting block with the cutting margin of 32 or 64 knives is scribed and cut in sequence according to the rule of bisector, quartering, eighty, sixteen, thirty-two and sixty-four;
for the initial cutting block with less than 32 cutting allowance, the cutting allowance is increased by 2nScribing and dividing the cutting allowance (n is a positive integer) until the cutting allowance can not be continuously divided to meet the requirement of 2nFor a cutting margin of 2nThe blocks are scribed and cut at bisected, quartered, eighted and sixteen parts.
8. A laser apparatus for implementing the method of processing a sapphire substrate LED wafer as claimed in any one of claims 1 to 7, comprising: the device comprises a device body, a laser scribing component (1), an infrared laser heating component (2) and a cooling structure (3);
the device body is provided with a rotary working platform (4), and the sapphire substrate LED wafer is fixed on the rotary working platform (4);
the laser scribing component (1) is assembled on the device body, and the laser scribing component (1) is used for generating scribing laser to scribe on the surface of the LED wafer sapphire (006) so as to form an initial crack (003) with the depth within 5-20 um on the surface of the LED wafer sapphire (006);
the infrared laser heating assembly (2) is assembled on the device body, and the infrared laser heating assembly (2) is used for generating infrared laser to heat the surface of the LED wafer sapphire (006) at the rear of the scribing laser scribing direction, so that the heated area of the surface of the LED wafer sapphire (006) forms tensile stress distribution;
the cooling structure (3) is assembled on the infrared laser heating assembly (2), the cooling structure (3) is used for cooling a heated area of the surface of the LED wafer sapphire (006), a compressive stress distribution is formed on the cooled area of the surface of the LED wafer sapphire (006), the initial cracks (003) are made to spread downwards along the longitudinal direction of the LED wafer sapphire (006) until the wafers are separated, and the sapphire substrate LED wafer is made to crack along the corresponding initial cracks (003).
9. Laser device according to claim 8, characterized in that the laser scribing assembly (1) comprises: the laser scribing device comprises a scribing laser (11), a scribing laser beam expander set (12) and a scribing laser beam reflector set (13), wherein the scribing laser (11) is used for generating scribing laser, the scribing laser beam expander set (12) is used for expanding and collimating the scribing laser, and the scribing laser passes through the scribing laser beam expander set (12) and then is reflected to a scribing position by the scribing laser beam reflector set (13);
the infrared laser heating assembly (2) comprises: infrared laser (21), the first speculum group of infrared beam (22), infrared laser beam expander group (23), beam plastic subassembly (24) and infrared beam second mirror group (25), the infrared laser that infrared laser (21) produced by the first speculum group of infrared beam (22) reflect extremely infrared laser beam expander group (23), infrared laser beam expander group (23) are used for expanding the beam collimation to infrared laser, beam plastic subassembly (24) are used for adjusting infrared laser beam's energy distribution, infrared laser passes through in proper order infrared laser beam expander group (23) with behind beam plastic subassembly (24) by infrared beam second mirror group (25) reflect to the position that heats.
10. The laser device according to claim 8, wherein the cooling structure (3) adopts a water mist generator, and the water mist is sprayed by the cooling structure (3) to cool the heated area on the surface of the LED wafer sapphire (006).
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