CN102315169A - The dividing method of optical device wafer - Google Patents
The dividing method of optical device wafer Download PDFInfo
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- CN102315169A CN102315169A CN2011101881008A CN201110188100A CN102315169A CN 102315169 A CN102315169 A CN 102315169A CN 2011101881008 A CN2011101881008 A CN 2011101881008A CN 201110188100 A CN201110188100 A CN 201110188100A CN 102315169 A CN102315169 A CN 102315169A
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Abstract
The dividing method of optical device wafer can be formed with the optical device wafer of optical device layer with the plane of disruption mode vertical with front and back along the surface that spacing track is segmented in sapphire substrate.Wherein, Along spacing track optical device wafer is divided into each optical device; Optical device wafer is formed with optical device in the zone of being divided by the 1st, the 2nd spacing track; This dividing method comprises: the 1st laser processing groove forms operation, from the front of optical device wafer or rear side along the 1st spacing track irradiating laser light, form the 1st laser processing groove; The 2nd laser processing groove forms operation, and front or rear side edge the 2nd spacing track irradiating laser light from optical device wafer form the 2nd laser processing groove; The 1st breaking step of breaking applies external force along the 1st spacing track of optical device wafer and makes the optical device wafer fracture; The 2nd breaking step of breaking applies external force along the 2nd spacing track of optical device wafer and makes the optical device wafer fracture, and the degree of depth of depth ratio the 1st laser processing groove of the 2nd laser processing groove is dark.
Description
Technical field
The present invention relates to cut apart the dividing method of the optical device wafer of optical device wafer along spacing track, said optical device wafer sapphire substrate lip-deep, be formed with optical device by forming in a plurality of zones that cancellate a plurality of spacing track marks off.
Background technology
In optical device manufacturing process; At the surperficial range upon range of optical device layer that constitutes by gallium nitride compound semiconductor of the sapphire substrate of circular plate shape roughly; And; Form optical devices such as light-emitting diode, laser diode by forming in a plurality of zones that cancellate a plurality of spacing track marks off, thereby constituting optical device wafer.Then, cut apart optical device wafer and produce optical device one by one along spacing track.
Usually, carry out the cut-out along spacing track of above-mentioned optical device wafer through the topping machanism that is called as scribing machine (dicer).This topping machanism possesses: chuck table, and it keeps machined object; Cutting unit, it is used for the machined object that remains on this chuck table is cut; And the cutting feed unit, it relatively moves chuck table and cutting unit.Cutting unit comprises rotary main shaft, be assemblied in cutting tool and the driving mechanism of driven in rotation main axis rotation on this rotary main shaft.Cutting tool is made up of discoid pedestal and the cutting edge that is assemblied in the ring-type on the side peripheral part of this pedestal, and cutting edge is that diamond abrasive grain about 3 μ m is fixed in pedestal and forms through electroforming with particle diameter for example, and its thickness forms about 20 μ m.
Yet, owing to constitute the Mohs' hardness height of the sapphire substrate of optical device wafer, so the cut-out that utilizes above-mentioned cutting tool to carry out may not be easy.Therefore, can not increase the approach of cutting tool, cut off optical device wafer, so there is the relatively poor problem of productivity and need repeatedly implement cutting process.
In order to eliminate the problems referred to above; Proposed such method: the one side side through from optical device wafer forms the laser processing groove as the fracture starting point along the spacing track irradiation for the pulse laser light that optical device wafer has absorbefacient wavelength; Apply external force along having formed this spacing track as the laser processing groove of fracture starting point; Make optical device wafer along spacing track fracture (for example, with reference to patent documentation 1) thus.
[patent documentation 1] japanese kokai publication hei 10-305420 communique
Yet; When applying external force and make optical device wafer when spacing track ruptures along being formed with the spacing track of laser processing groove as the fracture starting point; Have such problem: the plane of disruption with respect to the face tilt vertical with front and back about 5～10 μ m and split, reduced the brightness of optical device.
Research according to the inventor infers, the plane of disruption of optical device wafer with respect to vertical face tilt 5～10 μ m of front and back about and split relevant with following factor: constitute the sapphire crystal orientation of sapphire substrate and the blind crack that generates through irradiating laser light.
Promptly; As shown in Figure 1; Optical device wafer 2 is at the positive 2a of the sapphire substrate of the directional plane (Orientation Flat) 21 that is formed with the sapphire crystal orientation of expression; By a plurality of 1st spacing tracks 22 parallel with directional plane 21 with zone that directional plane 21 vertical a plurality of the 2nd spacing tracks 23 mark off in, be formed with optical device 24.The sapphire substrate that constitutes optical device wafer 2 is formed obliquely the crystallizing layer as the R face on the direction vertical with directional plane 21 and with front and back.Therefore, when along the 1st spacing track 22 irradiating laser light, formed trickle crackle more deeply along the R face at the downside of laser processing groove.Therefore; When making optical device wafer 2 fractures when applying external force along laser processing groove (this laser processing groove forms along the 2nd spacing track 23); Receive the influence of the blind crack that the downside in the laser processing groove that forms along the 1st spacing track 22 generates and along the fracture of R face, so the plane of disruption splits with respect to front and back obliquely.
Summary of the invention
The present invention In view of the foregoing accomplishes just; Its major technology problem is to provide a kind of dividing method of optical device wafer, can cut apart the optical device wafer that is formed on the sapphire substrate surface along spacing track with the plane of disruption mode vertical with front and back.
In order to solve above-mentioned major technology problem; According to the present invention, a kind of dividing method of optical device wafer is provided, this dividing method is divided into each optical device along the 1st spacing track and the 2nd spacing track with optical device wafer; Wherein, Said optical device wafer is in the front of sapphire substrate of the directional plane that is formed with the sapphire crystal orientation of expression, by in a plurality of the 1st spacing tracks parallel with directional plane and the zone that a plurality of the 2nd spacing tracks vertical with directional plane mark off, is formed with optical device; This dividing method is characterised in that, comprises following operation:
The 1st laser processing groove forms operation, from the front of optical device wafer or rear side along the 1st spacing track irradiating laser light, form the 1st laser processing groove at the front or the back side of optical device wafer as the fracture starting point;
The 2nd laser processing groove forms operation, from the front of optical device wafer or rear side along the 2nd spacing track irradiating laser light, form the 2nd laser processing groove at the front or the back side of optical device wafer as the fracture starting point;
The 1st breaking step of breaking; Form the 1st spacing track that operation and the 2nd laser processing groove form the optical device wafer after the operation and apply external force along having implemented the 1st laser processing groove; Make optical device wafer along the fracture of the 1st laser processing groove, wherein, the 1st laser processing groove forms along the 1st spacing track; And
The 2nd breaking step of breaking; Form the 2nd spacing track that operation and the 2nd laser processing groove form the optical device wafer after the operation and apply external force along having implemented the 1st laser processing groove, make optical device wafer along the fracture of the 2nd laser processing groove, wherein; The 2nd laser processing groove forms along the 2nd spacing track
The degree of depth of the 2nd laser processing groove is set to darker than the degree of depth of the 1st laser processing groove.
The degree of depth of said the 1st laser processing groove be set to optical device wafer thickness 10～20%, the degree of depth of said the 2nd laser processing groove is set to than the degree of depth of the 1st laser processing groove dark 40～60%.
In the dividing method of optical device wafer of the present invention; The degree of depth of the 2nd laser processing groove that forms along vertical the 2nd spacing track of directional plane with the sapphire crystal orientation of expression is set to darker than the degree of depth of the 1st laser processing groove that forms along the 1st spacing track parallel with directional plane; Therefore; Make optical device wafer when fracture along the 2nd spacing track that has formed the 2nd laser processing groove, can not receive the influence of the crackle that forms along the R face at the downside of laser processing groove.Therefore, the plane of disruption along the optical device wafer of the 2nd spacing track fracture that has formed the 2nd laser processing groove is vertical with the front and the back side.
Description of drawings
Fig. 1 is the stereogram that the state after the part of dissecing optical device wafer is shown.
Fig. 2 is the stereogram that the state behind the cutting belt surface that is assemblied on the ring-type frame that optical device wafer shown in Figure 1 is pasted is shown.
Fig. 3 be the 1st laser processing groove of dividing method that is used for the optical device wafer of embodiment of the present invention form operation and the 2nd laser processing groove form operation laser processing device want portion's stereogram.
Fig. 4 is the key diagram that the 1st laser processing groove in the dividing method of optical device wafer of the present invention forms operation.
Fig. 5 illustrates the cutaway view of wanting portion of having implemented the optical device wafer after the 1st laser processing groove formation operation shown in Figure 4 with amplifying.
Fig. 6 is the key diagram that the 2nd laser processing groove in the dividing method of optical device wafer of the present invention forms operation.
Fig. 7 illustrates the cutaway view of wanting portion of having implemented the optical device wafer after the 2nd laser processing groove formation operation shown in Figure 6 with amplifying.
Fig. 8 is the 1st breaking step of breaking and the stereogram of the wafer fracture device that is used to implement the 1st breaking step of breaking in the dividing method of optical device wafer of the present invention.
Fig. 9 is the key diagram of the 1st breaking step of breaking in the dividing method of optical device wafer of the present invention.
Figure 10 is the key diagram of the 2nd breaking step of breaking in the dividing method of optical device wafer of the present invention.
Label declaration
2: optical device wafer
21: directional plane
22: the 1 spacing tracks
23: the 2 spacing tracks
24: optical device
25: the 1 laser processing groove
26: the 2 laser processing groove
3: laser processing device
31: the chuck of laser processing device
32: the laser light irradiation unit
322: concentrator
4: wafer fracture device
41: the pedestal of wafer fracture device
42: travelling carriage
44: the frame holding unit
46: the tension force applying unit
F: ring-type frame
T: cutting belt
Embodiment
Below, be elaborated with reference to the preferred implementation of accompanying drawing to the dividing method of optical device wafer of the present invention.
In order to cut apart above-mentioned optical device wafer shown in Figure 12 along the 1st spacing track 22 and the 2nd spacing track 23; In the illustrated embodiment; As shown in Figure 2; The back side 2b of optical device wafer 2 is pasted on the cutting belt T that is made up of synthetic resin sheets such as polyolefin, and this cutting belt T is assemblied in ring-type frame F and goes up (wafer support operation).Therefore, the positive 2a that is adhered to the optical device wafer 2 on the cutting belt T becomes upside.In addition, also can the positive 2a of optical device wafer 2 be pasted cutting belt T goes up and makes back side 2b become upside.
After having implemented above-mentioned wafer support operation; Implement following the 1st laser processing groove and form operation: from the front of optical device wafer 2 or rear side along the 1st spacing track 22 irradiating laser light, form the 1st laser processing groove at the front or the back side of optical device wafer 2 as the fracture starting point.In addition; In the illustrated embodiment; Following example is described: in above-mentioned wafer support operation, the back side 2b of optical device wafer 2 is pasted on the cutting belt T that is assemblied on the ring-type frame F, form in the operation in the 1st laser processing groove; Along the 1st spacing track 22 irradiating laser light, form the 1st laser processing groove from the face side of optical device wafer 2 as the fracture starting point in the front of optical device wafer 2.Use laser processing device 3 shown in Figure 3 to implement the 1st laser processing groove and form operation.Laser processing device 3 shown in Figure 3 possesses: chuck table 31, and it keeps machined object; Laser light irradiation unit 32, it is to the machined object irradiating laser light that remains on this chuck table 31; With image unit 33, it is taken the machined object that remains on the chuck table 31.
Above-mentioned chuck table 31 constitutes absorption and keeps machined object; This chuck table 31 moves on the processing direction of feed shown in the arrow X in Fig. 3 through not shown processing feed unit, and moves on the index feed direction shown in the arrow Y in Fig. 3 through not shown index feed unit.
Above-mentioned laser light irradiation unit 32 comprises the housing 321 of the drum of horizontal arrangement in fact.In housing 321, be equipped with pulse laser light oscillating unit, this pulse laser light oscillating unit has pulsed laser light line oscillator and the repetition rate setup unit that is made up of not shown YAG laser oscillator or YVO4 laser oscillator.At the leading section of above-mentioned housing 321, be equipped with concentrator 322, concentrator 322 is used to make the pulse laser light convergence of vibrating and from pulse laser light oscillating unit.
Image unit 33 is assemblied in the leading section of the housing 321 that constitutes above-mentioned laser light irradiation unit 32, and this image unit 33 has: the lighting unit that machined object is thrown light on; Seizure is by the optical system in the zone of this lighting unit illumination; And the imaging apparatus (CCD) that the picture that is captured by this optical system is taken etc., this image unit 33 sends to not shown control unit with the picture signal that photographs.
Form operation in order to use above-mentioned laser processing device 3 to implement above-mentioned the 1st laser processing groove, the cutting belt T side of pasting optical device wafer 2 is carried on the chuck table 31 of putting laser processing device shown in Figure 33.Then, make not shown absorbing unit work, optical device wafer 2 is remained on (wafer maintenance operation) on the chuck table 31 across cutting belt T absorption.Therefore, the positive 2a that remains in the optical device wafer 2 on the chuck table 31 becomes upside.In addition, in Fig. 3, omitted the diagram of the ring-type frame F that is assembling cutting belt T, and ring-type frame F is kept by the suitable frame holding unit that is disposed on the chuck table 31.
Then, make not shown processing feed unit work and will adsorb the chuck table 31 that is keeping semiconductor wafer 2 move to image unit 33 under.Chuck table 31 be located in image unit 33 under the time, carry out the aligning operation through image unit 33 and not shown control unit, this alignings operation be detection optical device wafer 2 should carry out the operation of the machining area of laser processing.Promptly; Image unit 33 is carried out image processing such as pattern match with not shown control unit; Thereby carry out the aligning (alignment process) of laser light irradiation position; Wherein, image processing such as above-mentioned pattern match be used to be formed on the 1st spacing track 22 on the optical device wafer 2, and along the position alignment between the concentrator 322 of the laser light irradiation unit 32 of the 1st spacing track 22 irradiating laser light.In addition, for the 2nd spacing track 23 that is formed on the optical device wafer 2, carry out the aligning of laser light irradiation position similarly.
After having implemented above-mentioned alignment process, shown in Fig. 4 (a), chuck table 31 is moved to the laser light irradiation zone at concentrator 322 place of laser light irradiation unit 32, and the 1st spacing track 22 that will be scheduled to be positioned concentrator 322 under.At this moment, shown in Fig. 4 (a), optical device wafer 2 is oriented to, make the end (among Fig. 4 (a) for left end) of the 1st spacing track 22 be positioned at concentrator 322 under.Then, shown in Fig. 4 (a), make near the positive 2a (upper surface) of focal point P alignment light device wafer 2 of the pulse laser light that irradiates from concentrator 322.Then, have the pulse laser light of absorbefacient wavelength for optical device wafer 2, make chuck table 31 mobile on the direction shown in the arrow X1 among Fig. 4 (a) simultaneously with predetermined processing feed speed from 322 irradiations of the concentrator of laser light irradiation unit 32.Then, shown in Fig. 4 (b), when the other end (being right-hand member among Fig. 4 (b)) of the 1st spacing track 22 arrive concentrator 322 under during the position, stop irradiated with pulse laser light, and make chuck table 31 stop to move.Its result shown in Fig. 4 (b), at the positive 2a of optical device wafer 2, has formed the 1st laser processing groove 25 as the fracture starting point along the 1st spacing track 22.
Illustrated at Fig. 5 (a) with (b) and to have amplified the ground expression and implemented the cutaway view of wanting portion that above-mentioned the 1st laser processing groove forms the optical device wafer 2 after the operation; Fig. 5 (a) is the cutaway view of the direction vertical with the 1st spacing track 22, and Fig. 5 (b) is the A-A line cutaway view among Fig. 5 (a).Like Fig. 5 (a) with (b), the degree of depth of the 1st laser processing groove 25 that forms along the 1st spacing track 22 at the positive 2a of optical device wafer 2 be set to optical device wafer 2 thickness 10～20%.For example, be under the situation of 100 μ m at the thickness of optical device wafer 2, preferably the degree of depth with the 1st laser processing groove 25 is set at 10～20 μ m.When in this wise at the positive 2a of optical device wafer 2 when the 1st spacing track 22 forms the 1st laser processing groove 25, forming the degree of depth at the downside of the 1st laser processing groove 25 along above-mentioned R face is the blind crack 251 of a few μ m.The degree of depth for the 1st laser processing groove 25; When than 10% when shallow of the thickness of optical device wafer 2; Be difficult to optical device wafer 2 ruptured definitely along the 1st laser processing groove 25; When than 20% when dark of the thickness of optical device wafer 2, the influence that is formed on the crackle 251 of the 1st laser processing groove 25 downsides becomes big, therefore preferably with the degree of depth of the 1st laser processing groove 25 be set at optical device wafer 2 thickness 10～20%.
The processing conditions that above-mentioned the 1st laser processing groove forms in the operation is set for example as followsly.
Light source: semiconductor pumped solid-state laser device (Nd:YAG)
Wavelength: 355nm pulse laser
Repetition rate: 200kHz
Average output: 1.4W
Focal point diameter:
Processing feed speed: 300mm/ second
Form operation through implement the 1st laser processing groove according to above-mentioned processing conditions, can form the degree of depth thus is the 1st laser processing groove 25 of 15 μ m.
And, implement above-mentioned the 1st laser processing groove formation operation along all the 1st spacing tracks 22 that are formed on the optical device wafer 2.
After be formed on all the 1st spacing tracks 22 on the optical device wafer 2 and implemented above-mentioned the 1st laser processing groove and form operation; Implement following the 2nd laser processing groove and form operation: along the 2nd spacing track 23 irradiating laser light, form the 2nd laser processing groove as the fracture starting point in the front of optical device wafer 2 from the face side of optical device wafer 2.Can use above-mentioned laser processing device shown in Figure 33 to implement the 2nd laser processing groove and form operation.Promptly; After having implemented above-mentioned the 1st laser processing groove formation operation; Make chuck table 31 rotate 90 degree, the 2nd spacing track 23 irradiating laser light along on the direction vertical with above-mentioned the 1st spacing track 22, forming form the 2nd laser processing groove as the fracture starting point in the front of optical device wafer 2.
Form operation in order to implement the 2nd laser processing groove, shown in Fig. 6 (a), chuck table 31 moved to the laser light irradiation zone at concentrator 322 places of laser light irradiation unit 32, and the 2nd spacing track 23 that will be scheduled to be positioned concentrator 322 under.At this moment, shown in Fig. 6 (a), optical device wafer 2 is oriented to, make the end (among Fig. 6 (a) for left end) of the 2nd spacing track 23 be positioned at concentrator 322 under.Then, shown in Fig. 6 (a), make near the positive 2a (upper surface) of focal point P alignment light device wafer 2 of the pulse laser light that irradiates from concentrator 322.Then, have the pulse laser light of absorbefacient wavelength for optical device wafer 2, make chuck table 31 mobile on the direction shown in the arrow X1 among Fig. 6 (a) simultaneously with predetermined processing feed speed from 322 irradiations of the concentrator of laser light irradiation unit 32.Then, shown in Fig. 6 (b), when the other end (being right-hand member among Fig. 6 (b)) of the 2nd spacing track 23 arrive concentrator 322 under during the position, stop irradiated with pulse laser light, and make chuck table 31 stop to move.Its result shown in Fig. 6 (b), at the positive 2a of optical device wafer 2, has formed the 2nd laser processing groove 26 as the fracture starting point along spacing track 23.
Illustrated at Fig. 7 (a) with (b) and to have amplified the ground expression and implemented the cutaway view of wanting portion that above-mentioned the 2nd laser processing groove forms the optical device wafer 2 after the operation; Fig. 7 (a) is the cutaway view of the direction vertical with the 2nd spacing track 23, and Fig. 7 (b) is the B-B line cutaway view among Fig. 7 (a).Like Fig. 7 (a) with (b), the degree of depth of the 2nd laser processing groove 26 that forms along the 2nd spacing track 23 at the positive 2a of optical device wafer 2 is set to than the degree of depth of the 1st laser processing groove 25 dark 40～60%.For example, be under the situation of 10～20 μ m at the thickness of the 1st laser processing groove 25, preferably the degree of depth with the 2nd laser processing groove 26 is set at 14～32 μ m.Like this; Be set at than the degree of depth of the 1st laser processing groove 25 dark 40～60% through the degree of depth the 2nd laser processing groove 26; Like Fig. 7 (a) with (b), downside is more leaned on than the blind crack 251 that is formed on the 1st laser processing groove 25 downsides in the bottom of the 2nd laser processing groove 26 thus.In addition, when in this wise on the optical device wafer 2 when the 2nd spacing track 23 forms the 2nd laser processing groove 26, form blind crack 261 at the downside of the 2nd laser processing groove 26.
The processing conditions that above-mentioned the 2nd laser processing groove forms in the operation is set for example as followsly.
Light source: semiconductor pumped solid-state laser device (Nd:YAG)
Wavelength: 355nm pulse laser
Repetition rate: 200kHz
Average output: 2.5W
Focal point diameter:
Processing feed speed: 300mm/ second
Form operation through implement the 2nd laser processing groove according to above-mentioned processing conditions, can form the degree of depth thus is the 2nd laser processing groove 26 of 25 μ m.
And, implement above-mentioned the 2nd laser processing groove formation operation along all the 2nd spacing tracks 23 that are formed on the optical device wafer 2.
Then; Implement the 1st following breaking step of breaking: form the 1st spacing track 22 that operation and the 2nd laser processing groove form the optical device wafer 2 after the operation and apply external force along having implemented above-mentioned the 1st laser processing groove; Make optical device wafer 2 along 25 fractures of the 1st laser processing groove, the 1st laser processing groove 25 forms along the 1st spacing track 22.Use wafer fracture device 4 shown in Figure 8 to implement the 1st breaking step of breaking.Wafer fracture device 4 shown in Figure 8 possesses pedestal 41 and travelling carriage 42, and this travelling carriage 42 is being provided on this pedestal 41 in the mode that moves on the direction shown in the arrow Y.Pedestal 41 forms rectangular shape, is equipped with two guide rails 411,412 in parallel to each other in the direction shown in the arrow Y of upper surface upper edge, the both sides of this pedestal 41.Travelling carriage 42 is provided on these two guide rails 411,412 with the mode that can move.Travelling carriage 42 moves on the direction shown in the arrow Y by means of mobile unit 43.On travelling carriage 42, be equipped with the framework holding unit 44 that is used to keep above-mentioned ring-type frame F.Frame holding unit 44 has: main body 441 cylindraceous; Be located at the frame holding member 442 of ring-type of the upper end of this main body 441; And a plurality of anchor clamps 443 that are equipped on the periphery of this frame holding member 442 as fixed cell.The frame holding unit 44 that so constitutes carries through 443 pairs of anchor clamps and places the ring-type frame 5 on the frame holding member 442 to fix.In addition, wafer fracture device 4 shown in Figure 8 possesses the rotating unit 45 that above-mentioned frame holding unit 44 is rotated.This rotating unit 45 is by constituting with the lower part: be equipped on the pulse motor 451 on the above-mentioned travelling carriage 42; Belt wheel 452, it is assemblied on the rotating shaft of this pulse motor 451; And endless belt 453, it is wound on this belt wheel 452 and the main body 441 cylindraceous.The rotating unit 45 that so constitutes rotates frame holding unit 44 through driving pulse motor 451 via belt wheel 452 and endless belt 453.
Wafer fracture device 4 shown in Figure 8 possesses tension force applying unit 46; This tension force applying unit 46 is sun adjuster spare wafer 2 effect tensile forces on the direction vertical with the 1st spacing track 22 or the 2nd spacing track 23; Wherein, This optical device wafer 2 is supported on the ring-type frame F across cutting belt T, and this ring-type frame F then is held on the frame holding member 442 of above-mentioned ring-type.Tension force applying unit 46 is configured in the frame holding member 442 of ring-type.This tension force applying unit 46 possesses the 1st absorption holding member 461 and the 2nd absorption holding member 462, and said the 1st absorption holding member 461 possesses rectangular maintenance face long on the direction vertical with arrow Y direction with the 2nd absorption holding member 462.On the 1st absorption holding member 461, be formed with a plurality of adsorption hole 461a, on the 2nd absorption holding member 462, be formed with a plurality of adsorption hole 462a.A plurality of adsorption hole 461a and 462a are communicated with not shown absorbing unit.In addition, the 1st absorption holding member 461 and the 2nd absorption holding member 462 constitute by means of not shown mobile unit and on arrow Y direction, move respectively.
Wafer shown in Figure 8 fracture device 4 possesses and is used to detect the 1st spacing track 22 of optical device wafer 2 and the detecting unit 47 of the 2nd spacing track 23; Wherein, this optical device wafer 2 is supported on the ring-type frame F that is kept by the frame holding member of above-mentioned ring-type 442 across cutting belt T.Detecting unit 47 is installed on the support column 471 of the L word shape that is equipped on the pedestal 41.This detecting unit 47 is by optical system and imaging apparatus formations such as (CCD), and this detecting unit 47 is configured in the place, top position of mentioned strain applying unit 46.The 1st spacing track 22 and the 2nd spacing track 23 of the detecting unit 47 sun adjuster spare wafers 2 that so constitute are taken; And convert thereof into the signal of telecommunication and be sent to not shown control unit; Wherein, this optical device wafer 2 is supported on the ring-type frame F that is kept by the frame holding member of above-mentioned ring-type 442 across cutting belt T.
With reference to Fig. 9 the 1st breaking step of breaking of using above-mentioned wafer segmenting device 4 to implement is described.
Shown in Fig. 9 (a); The ring-type frame F that is assembling cutting belt T carried put on the frame holding member 442; And utilize anchor clamps 443 that this ring-type frame F is fixed on the frame holding member 442; Wherein, pasting the optical device wafer of having implemented after above-mentioned the 1st laser processing groove forms operation and the 2nd laser processing groove formation operation 2 on the cutting belt T.Then; Make mobile unit 43 work; Travelling carriage 42 is gone up in the direction (with reference to Fig. 8) shown in the arrow Y to be moved; Shown in Fig. 9 (a), adsorb between the maintenance face of holding member 462 with the 2nd being formed at the maintenance face that one article of the 1st spacing track 22 (being the spacing track of high order end in the illustrated embodiment) on the optical device wafer 2 be positioned to constitute the 1st absorption holding member 461 of tension force applying unit 46.At this moment, take the 1st spacing track 22 by detecting unit 47, the maintenance face and the 2nd that carries out the 1st absorption holding member 461 adsorbs the position alignment between the maintenance face of holding member 462.Like this; Adsorb between the maintenance face of holding member 462 at the maintenance face that one article of the 1st spacing track 22 is positioned the 1st absorption holding member 461 and the 2nd after; Make not shown absorbing unit work; Make adsorption hole 461a and 462a effect negative pressure, thus, across cutting belt T optical device wafer 2 absorption is remained on the maintenance face of maintenance face and the 2nd absorption holding member 462 of the 1st absorption holding member 461 (maintenance operation).
After having implemented above-mentioned maintenance operation, make the not shown mobile unit work that constitutes tension force applying unit 46, the 1st absorption holding member 461 and the 2nd absorption holding member 462 direction that such court is separated from each other shown in Fig. 9 (b) are moved.Its result; On the 1st spacing track 22 between the maintenance face of maintenance face that is located in the 1st absorption holding member 461 and the 2nd absorption holding member 462; The directive effect tensile force that the edge is vertical with the 1st spacing track 22, optical device wafer 2 become the mode of fracture starting point along 22 fractures (the 1st breaking step of breaking) of the 1st spacing track with the 1st laser processing groove 25.Through implementing the 1st breaking step of breaking, cutting belt T is stretched slightly.In the 1st breaking step of breaking; Because thereby optical device wafer 2 has formed the 1st laser processing groove 25 along the 1st spacing track 22 and has reduced intensity; Therefore; Through the 1st absorption holding member 461 and the 2nd absorption holding member 462 are moved about 0.5mm to the direction that is separated from each other, optical device wafer 2 is ruptured along the 1st spacing track 22 with the mode that is formed at the 1st laser processing groove 25 on the optical device wafer 2 and becomes the fracture starting point.
Implementing in this wise after the 1st breaking step of breaking that is formed at one article of the 1st spacing track, 22 fractures on the optical device wafer 2, the absorption of removing above-mentioned the 1st absorption holding member 461 and the 2nd absorption holding member 462 sun adjuster spare wafers 2 keeps.Then; Make mobile unit 43 work; Travelling carriage 42 go up to be moved with the interval of the 1st spacing track 22 in the direction (with reference to Fig. 8) shown in the arrow Y measure accordingly, will and implement the maintenance face that the 1st spacing track 22 the 1st adjacent spacing tracks 22 after the above-mentioned breaking step of breaking are positioned to constitute the 1st absorption holding member 461 of tension force applying unit 46 and adsorbed between the maintenance face of holding member 462 with the 2nd.Then, implement above-mentioned maintenance operation and the 1st breaking step of breaking.
Such as above to after being formed on all the 1st spacing tracks 22 on the optical device wafer 2 and having implemented above-mentioned maintenance operation and breaking step of breaking; Implement the 2nd breaking step of breaking; In the 2nd breaking step of breaking, apply external force along the 2nd spacing track 23 of optical device wafer 2, make optical device wafer 2 fractures along the 2nd laser processing groove 26; Wherein, the 2nd laser processing groove 26 forms along the 2nd spacing track 23.In the 2nd breaking step of breaking, from having implemented the state of the 1st breaking step of breaking, make rotating unit 45 work, and make frame holding unit 44 rotate 90 degree.Its result; The optical device wafer 2 that remains on the frame holding member 442 of frame holding unit 44 also rotates 90 degree; The 2nd spacing track 23 is positioned to and the maintenance face of the 1st absorption holding member 461 and the parallel state of maintenance face of the 2nd absorption holding member 462; Wherein, the 2nd spacing track 23 be formed on be formed at predetermined direction and implemented above-mentioned the 1st breaking step of breaking after the vertical direction (vertical) of the 1st spacing track 22 with directional plane 21 on.
Then; Make mobile unit 43 work; Travelling carriage 472 is gone up in the direction (with reference to Fig. 8) shown in the arrow Y to be moved; Shown in Figure 10 (a), adsorb between the maintenance face of holding member 462 with the 2nd being formed at the maintenance face that one article of the 2nd spacing track 23 (being the spacing track of high order end in the illustrated embodiment) on the optical device wafer 2 be positioned to constitute the 1st absorption holding member 461 of tension force applying unit 46.Like this; The maintenance face and the 2nd that one article of the 2nd spacing track 23 is positioned the 1st absorption holding member 461 adsorbs between the maintenance face of holding member 462; Afterwards, make not shown absorbing unit work, make adsorption hole 461a and 462a effect negative pressure; Thus, optical device wafer 2 absorption is remained on the maintenance face of maintenance face and the 2nd absorption holding member 462 of the 1st absorption holding member 461 (maintenance operation) across cutting belt T.
After having implemented above-mentioned maintenance operation, make the not shown mobile unit work that constitutes tension force applying unit 46, the 1st absorption holding member 461 and the 2nd absorption holding member 462 direction that such court is separated from each other shown in Figure 10 (b) are moved.Its result; On the 2nd spacing track 23 between the maintenance face of maintenance face that is located in the 1st absorption holding member 461 and the 2nd absorption holding member 462; The directive effect tensile force that the edge is vertical with the 2nd spacing track 23, optical device wafer 2 become the mode of fracture starting point along 23 fractures (the 2nd breaking step of breaking) of the 2nd spacing track with the 2nd laser processing groove 26.Like this; In the 2nd breaking step of breaking; Optical device wafer 2 becomes the mode of fracture starting point along 23 fractures of the 2nd spacing track with the 2nd laser processing groove 26; And as stated, downside (with reference to Fig. 7 (a) with (b)) is more leaned on than the blind crack 251 that is formed on the 1st laser processing groove 25 downsides in the bottom that the 2nd laser processing groove 26 forms the 2nd laser processing groove 26, thereby can not receive along the influence of the crackle 251 of R face formation.Therefore, the plane of disruption along the optical device wafer 2 that has formed the 2nd spacing track 23 fractures after the 2nd laser processing groove 26 is vertical with positive 2a and back side 2b.In addition, though formed blind crack 261,, therefore can not receive the influence of R face because crackle 261 forms and R face almost parallel at the downside of the 2nd laser processing groove 26.
More than, describe the present invention according to illustrated execution mode, but the present invention is not limited only to execution mode, can in purport scope of the present invention, carry out various distortion.For example; In the above-described embodiment; Form operation and the 2nd laser processing groove formation operation for the 1st laser processing groove; Show following example: from the face side irradiating laser light of optical device wafer; Form the 1st laser processing groove and the 2nd laser processing groove in the front of optical device wafer, but the 1st laser processing groove form operation and the 2nd laser processing groove form operation also can be from the rear side irradiating laser light of optical device wafer, thereby form the 1st laser processing groove and the 2nd laser processing groove at the back side of optical device wafer.
Claims (2)
1. the dividing method of an optical device wafer; This dividing method is divided into each optical device along the 1st spacing track and the 2nd spacing track with optical device wafer, and wherein, said optical device wafer is in the front of the sapphire substrate of the directional plane that is formed with the sapphire crystal orientation of expression; By in a plurality of the 1st spacing tracks parallel and the zone that a plurality of the 2nd spacing tracks vertical with directional plane mark off with directional plane; Be formed with optical device, this dividing method is characterised in that, comprises following operation:
The 1st laser processing groove forms operation, from the front of optical device wafer or rear side along the 1st spacing track irradiating laser light, form the 1st laser processing groove at the front or the back side of optical device wafer as the fracture starting point;
The 2nd laser processing groove forms operation, from the front of optical device wafer or rear side along the 2nd spacing track irradiating laser light, form the 2nd laser processing groove at the front or the back side of optical device wafer as the fracture starting point;
The 1st breaking step of breaking; Form the 1st spacing track that operation and the 2nd laser processing groove form the optical device wafer after the operation and apply external force along having implemented the 1st laser processing groove; Make optical device wafer along the fracture of the 1st laser processing groove, wherein, the 1st laser processing groove forms along the 1st spacing track; And
The 2nd breaking step of breaking; Form the 2nd spacing track that operation and the 2nd laser processing groove form the optical device wafer after the operation and apply external force along having implemented the 1st laser processing groove, make optical device wafer along the fracture of the 2nd laser processing groove, wherein; The 2nd laser processing groove forms along the 2nd spacing track
The degree of depth of the 2nd laser processing groove is set to darker than the degree of depth of the 1st laser processing groove.
2. the dividing method of optical device wafer according to claim 1, wherein,
The degree of depth of the 10～20%, the 2nd laser processing groove that the degree of depth of the 1st laser processing groove is set to the thickness of optical device wafer is set to than the degree of depth of the 1st laser processing groove dark 40～60%.
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| JP2010156842A JP5623807B2 (en) | 2010-07-09 | 2010-07-09 | Method for dividing optical device wafer |
| JP2010-156842 | 2010-07-09 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106624389A (en) * | 2017-02-22 | 2017-05-10 | 西安交通大学 | Optical fiber cutting device and method based on ultra-short pulse lasers |
| CN107924830A (en) * | 2015-08-18 | 2018-04-17 | 浜松光子学株式会社 | Method for cutting processing target and workpiece disconnecting device |
| CN107995996A (en) * | 2015-08-18 | 2018-05-04 | 浜松光子学株式会社 | Laser processing device and laser processing |
| CN110064846A (en) * | 2019-04-24 | 2019-07-30 | 北京理工大学 | A method of liquid one-way flowing surface is processed based on dynamic control |
| CN110625267A (en) * | 2019-08-22 | 2019-12-31 | 大族激光科技产业集团股份有限公司 | Method for processing sapphire substrate LED wafer and laser device |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102861994B (en) * | 2012-09-28 | 2015-04-01 | 合肥彩虹蓝光科技有限公司 | Cutting method of light-emitting element |
| JP6510933B2 (en) * | 2015-08-21 | 2019-05-08 | 株式会社ディスコ | Optical device wafer processing method |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08116137A (en) * | 1994-10-15 | 1996-05-07 | Toshiba Corp | Manufacture of semiconductor device and semiconductor laser |
| JPH09117910A (en) * | 1995-10-25 | 1997-05-06 | Murata Mfg Co Ltd | Manufacture of board for electronic part |
| US20040109486A1 (en) * | 1996-02-29 | 2004-06-10 | Kyocera Corporation | Sapphire monocrystal, semiconductor laser diode using the same for substrate, and method for manufacturing the same |
| CN1716566A (en) * | 2004-07-01 | 2006-01-04 | 株式会社迪斯科 | Wafer dividing method |
| JP2009130332A (en) * | 2007-11-28 | 2009-06-11 | Oki Semiconductor Co Ltd | Manufacturing method of semiconductor device |
| CN101604659A (en) * | 2008-06-13 | 2009-12-16 | 株式会社迪思科 | The dividing method of optical device wafer |
| JP2009294081A (en) * | 2008-06-05 | 2009-12-17 | Yamaha Corp | Manufacturing method of mems |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0265156A (en) * | 1988-08-30 | 1990-03-05 | Nec Kansai Ltd | Manufacture of semiconductor pellet |
| JP3580631B2 (en) * | 1996-02-29 | 2004-10-27 | 京セラ株式会社 | Single crystal sapphire substrate, method of dividing single crystal sapphire, and single crystal sapphire body |
| JP2001168388A (en) * | 1999-09-30 | 2001-06-22 | Sharp Corp | Gallium nitride compound semiconductor chip, its manufacturing method and gallium nitride compound semiconductor wafer |
| JP4590174B2 (en) * | 2003-09-11 | 2010-12-01 | 株式会社ディスコ | Wafer processing method |
| JP4536407B2 (en) * | 2004-03-30 | 2010-09-01 | 浜松ホトニクス株式会社 | Laser processing method and object to be processed |
-
2010
- 2010-07-09 JP JP2010156842A patent/JP5623807B2/en active Active
-
2011
- 2011-07-06 CN CN201110188100.8A patent/CN102315169B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08116137A (en) * | 1994-10-15 | 1996-05-07 | Toshiba Corp | Manufacture of semiconductor device and semiconductor laser |
| JPH09117910A (en) * | 1995-10-25 | 1997-05-06 | Murata Mfg Co Ltd | Manufacture of board for electronic part |
| US20040109486A1 (en) * | 1996-02-29 | 2004-06-10 | Kyocera Corporation | Sapphire monocrystal, semiconductor laser diode using the same for substrate, and method for manufacturing the same |
| CN1716566A (en) * | 2004-07-01 | 2006-01-04 | 株式会社迪斯科 | Wafer dividing method |
| JP2009130332A (en) * | 2007-11-28 | 2009-06-11 | Oki Semiconductor Co Ltd | Manufacturing method of semiconductor device |
| JP2009294081A (en) * | 2008-06-05 | 2009-12-17 | Yamaha Corp | Manufacturing method of mems |
| CN101604659A (en) * | 2008-06-13 | 2009-12-16 | 株式会社迪思科 | The dividing method of optical device wafer |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107924830A (en) * | 2015-08-18 | 2018-04-17 | 浜松光子学株式会社 | Method for cutting processing target and workpiece disconnecting device |
| CN107995996A (en) * | 2015-08-18 | 2018-05-04 | 浜松光子学株式会社 | Laser processing device and laser processing |
| CN107995996B (en) * | 2015-08-18 | 2021-10-15 | 浜松光子学株式会社 | Laser processing device and laser processing method |
| CN107924830B (en) * | 2015-08-18 | 2021-12-03 | 浜松光子学株式会社 | Method and apparatus for cutting object to be processed |
| CN106624389A (en) * | 2017-02-22 | 2017-05-10 | 西安交通大学 | Optical fiber cutting device and method based on ultra-short pulse lasers |
| CN110064846A (en) * | 2019-04-24 | 2019-07-30 | 北京理工大学 | A method of liquid one-way flowing surface is processed based on dynamic control |
| CN110625267A (en) * | 2019-08-22 | 2019-12-31 | 大族激光科技产业集团股份有限公司 | Method for processing sapphire substrate LED wafer and laser device |
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| Publication number | Publication date |
|---|---|
| JP2012019143A (en) | 2012-01-26 |
| JP5623807B2 (en) | 2014-11-12 |
| CN102315169B (en) | 2015-02-18 |
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