CN102315169B - Light device wafer cutting method - Google Patents
Light device wafer cutting method Download PDFInfo
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- CN102315169B CN102315169B CN201110188100.8A CN201110188100A CN102315169B CN 102315169 B CN102315169 B CN 102315169B CN 201110188100 A CN201110188100 A CN 201110188100A CN 102315169 B CN102315169 B CN 102315169B
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- 238000000034 method Methods 0.000 title claims abstract description 68
- 238000005520 cutting process Methods 0.000 title abstract description 35
- 238000012545 processing Methods 0.000 claims abstract description 149
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 16
- 239000010980 sapphire Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 230000003287 optical effect Effects 0.000 claims description 140
- 230000015572 biosynthetic process Effects 0.000 claims description 51
- 230000001678 irradiating effect Effects 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 5
- 238000010521 absorption reaction Methods 0.000 description 30
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 9
- 238000012423 maintenance Methods 0.000 description 7
- 208000037656 Respiratory Sounds Diseases 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 206010028896 Needle track marks Diseases 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- -1 gallium nitride compound Chemical class 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
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- Laser Beam Processing (AREA)
- Engineering & Computer Science (AREA)
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Abstract
The invention relates to a light device wafer cutting method. The method can be applied for cutting a light device wafer of a light device layer formed on the surface of a sapphire substrate along a gap path in a way that a fracture face is perpendicular to the front and the back. The light device wafer is divided into light devices along the gap path. The light device wafer forms light devices in an area divided by a first gap path and a second gap path. The cutting method comprises a first laser processing groove forming step in which laser rays are irradiated from the front or the back of the light device wafer along the first gap path and a first laser processing groove is formed; a second laser processing groove forming step in which laser rays are irradiated from the front or the back of the light device wafer along the second gap path and a second laser processing groove is formed; a first fracture step in which external force is exerted along the first gap path of the light device wafer so as to make the wafer break; and a second fracture step in which external force is exerted along the second gap path of the light device wafer so as to make the wafer break, wherein, the depth of the second laser processing groove is larger than that of the first laser processing groove.
Description
Technical field
The present invention relates to the dividing method of optical device wafer along spacing track segmentation optical device wafer, described optical device wafer on the surface of sapphire substrate, by being formed as being formed with optical device in multiple regions that cancellate multiple spacing track marks off.
Background technology
In optical device manufacturing process, in the stacked optical device layer be made up of gallium nitride compound semiconductor in surface of the roughly sapphire substrate of circular plate shape, and, by being formed as forming the optical device such as light-emitting diode, laser diode in multiple regions that cancellate multiple spacing track marks off, thus form optical device wafer.Then, optical device is one by one produced along spacing track segmentation optical device wafer.
Usually, the topping machanism by being called as scribing machine (dicer) carries out the cut-out along spacing track of above-mentioned optical device wafer.This topping machanism possesses: chuck table, and it keeps machined object; Cutting unit, it is for cutting the machined object be held in this chuck table; And cutting feed unit, it makes chuck table and cutting unit relative movement.The driving mechanism that cutting unit comprises rotary main shaft, is assemblied in the cutting tool on this rotary main shaft and drives rotary main shaft to rotate.Cutting tool is made up of discoid pedestal and the cutting edge of ring-type that is assemblied on the side peripheral part of this pedestal, and the diamond abrasive grain that particle diameter is such as about 3 μm by electroforming by cutting edge is fixed on pedestal and is formed, and its thickness is formed as about 20 μm.
But, because the Mohs' hardness of the sapphire substrate forming optical device wafer is high, so the cut-out utilizing above-mentioned cutting tool to carry out may not be easy.Therefore, the approach of cutting tool can not be increased, and need repeatedly to implement cutting process to cut off optical device wafer, so there is the poor problem of productivity.
In order to eliminate the problems referred to above, propose such method: form laser processing groove as break origins by irradiating the pulse laser light that there is absorbefacient wavelength for optical device wafer from the one side side of optical device wafer along spacing track, external force is applied along defining this spacing track as the laser processing groove of break origins, make optical device wafer along spacing track fracture (for example, referring to patent documentation 1) thus.
[patent documentation 1] Japanese Unexamined Patent Publication 10-305420 publication
But, when along be formed as the laser processing groove of break origins spacing track apply external force to make optical device wafer rupture along spacing track time, there is such problem: the plane of disruption about 5 ~ 10 μm relative to the face tilt vertical with front and back and splitting, reduce the brightness of optical device.
Research according to the present inventor is inferred, the plane of disruption of optical device wafer is split relative to the face tilt about 5 ~ 10 μm vertical with front and back with following factor about the sapphire crystal orientation forming sapphire substrate and the blind crack generated by irradiating laser light.
Namely, as shown in Figure 1, optical device wafer 2 represents the front 2a of the sapphire substrate of the directional plane (Orientation Flat) 21 of sapphire crystal orientation being formed, in the region marked off by multiple 1st spacing track 22 parallel with directional plane 21 and multiple 2nd spacing tracks 23 vertical with directional plane 21, be formed with optical device 24.Forming the sapphire substrate of optical device wafer 2 on the direction vertical with directional plane 21 is formed obliquely the crystallizing layer as R face with front and back.Therefore, when along the 1st spacing track 22 irradiating laser light, trickle crackle is defined in the downside of laser processing groove deeper along R face.Therefore, when making optical device wafer 2 rupture along laser processing groove (this laser processing groove is formed along the 2nd spacing track 23) applying external force, be subject to the impact of the blind crack generated in the downside of the laser processing groove formed along the 1st spacing track 22 and along the fracture of R face, therefore the plane of disruption splits obliquely relative to front and back.
Summary of the invention
The present invention completes just in view of the foregoing, its main technical task is the dividing method providing a kind of optical device wafer, can split the optical device wafer being formed in sapphire substrate surface in the mode that the plane of disruption is vertical with front and back along spacing track.
In order to solve above-mentioned main technical task, according to the present invention, a kind of dividing method of optical device wafer is provided, optical device wafer is divided into each optical device along the 1st spacing track and the 2nd spacing track by this dividing method, wherein, described optical device wafer is in the front of sapphire substrate being formed with the directional plane representing sapphire crystal orientation, in the region marked off by multiple 1st spacing track parallel with directional plane and multiple 2nd spacing tracks vertical with directional plane, be formed with optical device, the feature of this dividing method is, comprises following operation:
1st laser processing groove formation process, from the front of optical device wafer or rear side along the 1st spacing track irradiating laser light, forms the 1st laser processing groove as break origins in the front of optical device wafer or the back side;
2nd laser processing groove formation process, from the front of optical device wafer or rear side along the 2nd spacing track irradiating laser light, forms the 2nd laser processing groove as break origins in the front of optical device wafer or the back side;
1st breaking step of breaking, the 1st spacing track along the optical device wafer implemented after the 1st laser processing groove formation process and the 2nd laser processing groove formation process applies external force, optical device wafer is ruptured along the 1st laser processing groove, and wherein, the 1st laser processing groove is formed along the 1st spacing track; And
2nd breaking step of breaking, the 2nd spacing track along the optical device wafer implemented after the 1st laser processing groove formation process and the 2nd laser processing groove formation process applies external force, optical device wafer is ruptured, wherein along the 2nd laser processing groove, 2nd laser processing groove is formed along the 2nd spacing track
The degree of depth of the 2nd laser processing groove is set to darker than the degree of depth of the 1st laser processing groove.
The degree of depth of described 1st laser processing groove is set to 10 ~ 20% of the thickness of optical device wafer, and the degree of depth of described 2nd laser processing groove is set to the degree of depth dark 40 ~ 60% than the 1st laser processing groove.
In the dividing method of optical device wafer of the present invention, the degree of depth of the 2nd laser processing groove formed along the 2nd spacing track vertical with representing the directional plane of sapphire crystal orientation is set to darker than the degree of depth of the 1st laser processing groove formed along the 1st spacing track parallel with directional plane, therefore, when making optical device wafer rupture along the 2nd spacing track defining the 2nd laser processing groove, the impact of the crackle formed along R face in the downside of laser processing groove can not be subject to.Therefore, the plane of disruption of optical device wafer along the 2nd spacing track fracture defining the 2nd laser processing groove is vertical with front and the back side.
Accompanying drawing explanation
Fig. 1 is the stereogram of the state after the part that cutting optical device wafer is shown.
Fig. 2 is the stereogram of the state after the cutting belt surface that to be pasted by the optical device wafer shown in Fig. 1 and be assemblied on ring-type frame is shown.
Fig. 3 is the important part stereogram of the laser processing device of the 1st laser processing groove formation process in the dividing method for implementing optical device wafer of the present invention and the 2nd laser processing groove formation process.
Fig. 4 is the key diagram of the 1st laser processing groove formation process in the dividing method of optical device wafer of the present invention.
Fig. 5 is the cutaway view of the important part that the optical device wafer after implementing the 1st laser processing groove formation process shown in Fig. 4 is shown enlargedly.
Fig. 6 is the key diagram of the 2nd laser processing groove formation process in the dividing method of optical device wafer of the present invention.
Fig. 7 is the cutaway view of the important part that the optical device wafer after implementing the 2nd laser processing groove formation process shown in Fig. 6 is shown enlargedly.
Fig. 8 is the 1st breaking step of breaking in the dividing method of optical device wafer of the present invention and the stereogram for the wafer breakage device of implementing the 1st breaking step of breaking.
Fig. 9 is the key diagram of the 1st breaking step of breaking in the dividing method of optical device wafer of the present invention.
Figure 10 is the key diagram of the 2nd breaking step of breaking in the dividing method of optical device wafer of the present invention.
Label declaration
2: optical device wafer
21: directional plane
22: the 1 spacing tracks
23: the 2 spacing tracks
24: optical device
25: the 1 laser processing groove
26: the 2 laser processing groove
3: laser processing device
31: the chuck of laser processing device
32: laser light irradiation unit
322: concentrator
4: wafer breakage device
41: the pedestal of wafer breakage device
42: travelling carriage
44: frame holding unit
46: tension force applying unit
F: ring-type frame
T: cutting belt
Embodiment
Below, be described in detail with reference to the preferred implementation of accompanying drawing to the dividing method of optical device wafer of the present invention.
In order to split the optical device wafer 2 shown in above-mentioned Fig. 1 along the 1st spacing track 22 and the 2nd spacing track 23, in the illustrated embodiment, as shown in Figure 2, pasted by the back side 2b of optical device wafer 2 on the cutting belt T be made up of synthetic resin sheets such as polyolefin, this cutting belt T is assemblied in (wafer support operation) on ring-type frame F.Therefore, the front 2a being adhered to the optical device wafer 2 on cutting belt T becomes upside.In addition, also the front 2a of optical device wafer 2 can be pasted on cutting belt T makes back side 2b become upside.
After implementing above-mentioned wafer support operation, the 1st laser processing groove formation process be implemented as follows: from the front of optical device wafer 2 or rear side along the 1st spacing track 22 irradiating laser light, form the 1st laser processing groove as break origins in the front of optical device wafer 2 or the back side.In addition, in the illustrated embodiment, lower example is described: in above-mentioned wafer support operation, the back side 2b of optical device wafer 2 is pasted on the cutting belt T be assemblied on ring-type frame F, in the 1st laser processing groove formation process, from the face side of optical device wafer 2 along the 1st spacing track 22 irradiating laser light, form the 1st laser processing groove as break origins in the front of optical device wafer 2.The laser processing device 3 shown in Fig. 3 is used to implement the 1st laser processing groove formation process.Laser processing device 3 shown in Fig. 3 possesses: chuck table 31, and it keeps machined object; Laser light irradiation unit 32, it is to the machined object irradiating laser light be held in this chuck table 31; With image unit 33, it is taken the machined object be held in chuck table 31.
Above-mentioned chuck table 31 is configured to absorption and keeps machined object, this chuck table 31 by the processing direction of feed of not shown processing feed unit in figure 3 shown in arrow X moves, and is moved up the index feed side shown in arrow Y in figure 3 by not shown index feed unit.
Above-mentioned laser light irradiation unit 32 comprises the housing 321 of the drum of horizontal arrangement in fact.In housing 321, be equipped with pulse laser light oscillating unit, this pulse laser light oscillating unit has the pulsed laser light line oscillator and repetition rate setup unit that are made up of not shown YAG laser oscillator or YVO4 laser oscillator.At the leading section of above-mentioned housing 321, be equipped with concentrator 322, concentrator 322 is assembled from the vibrate pulse laser light that of pulse laser light oscillating unit for making.
Image unit 33 is assemblied in the leading section of the housing 321 forming above-mentioned laser light irradiation unit 32, and this image unit 33 has: the lighting unit thrown light on to machined object; Catch the optical system in the region of being thrown light on by this lighting unit; And to the imaging apparatus (CCD) etc. that the picture captured by this optical system is taken, the picture signal photographed is sent to not shown control unit by this image unit 33.
In order to use above-mentioned laser processing device 3 to implement above-mentioned 1st laser processing groove formation process, the cutting belt T side of pasting optical device wafer 2 is placed in the chuck table 31 of the laser processing device 3 shown in Fig. 3.Then, make not shown absorbing unit work, optical device wafer 2 is remained on (wafer maintenance operation) in chuck table 31 across cutting belt T absorption.Therefore, the front 2a being held in the optical device wafer 2 in chuck table 31 becomes upside.In addition, in figure 3, eliminate the diagram of the ring-type frame F assembling cutting belt T, and ring-type frame F is kept by the suitable frame holding unit be configured in chuck table 31.
Then, make not shown processing feed unit work and move to adsorbing the chuck table 31 that remain semiconductor wafer 2 immediately below image unit 33.When chuck table 31 is located in immediately below image unit 33, perform aligning operation by image unit 33 and not shown control unit, this aligning operation is the operation should carrying out the machining area of laser processing detecting optical device wafer 2.Namely, image unit 33 and not shown control unit perform the image procossing such as pattern match, thus perform the aligning (alignment process) of laser light irradiation position, wherein, the image procossing such as above-mentioned pattern match for carry out being formed in the 1st spacing track 22 on optical device wafer 2 and along the laser light irradiation unit 32 of the 1st spacing track 22 irradiating laser light concentrator 322 between position alignment.In addition, for the 2nd spacing track 23 be formed on optical device wafer 2, the aligning of laser light irradiation position is performed similarly.
After implementing above-mentioned alignment process, as shown in Fig. 4 (a), chuck table 31 is moved to the laser light irradiation region at concentrator 322 place of laser light irradiation unit 32, and the 1st predetermined spacing track 22 is positioned immediately below concentrator 322.Now, as shown in Fig. 4 (a), optical device wafer 2 is oriented to, and one end of the 1st spacing track 22 (being left end in Fig. 4 (a)) is positioned at immediately below concentrator 322.Then, as shown in Fig. 4 (a), near the front 2a (upper surface) of focal point P alignment light device wafer 2 making the pulse laser light irradiated from concentrator 322.Then, irradiate pulse laser light optical device wafer 2 to absorbefacient wavelength from the concentrator 322 of laser light irradiation unit 32, make chuck table 31 move up with predetermined processing feed speed side shown in arrow X1 in Fig. 4 (a) simultaneously.Then, as shown in Fig. 4 (b), when the other end (being right-hand member in Fig. 4 (b)) of the 1st spacing track 22 arrives position immediately below concentrator 322, stop irradiated with pulse laser light, and it is mobile that chuck table 31 is stopped.Its result, as shown in Fig. 4 (b), at the front 2a of optical device wafer 2, defines the 1st laser processing groove 25 as break origins along the 1st spacing track 22.
The cutaway view representing the important part of the optical device wafer 2 after implementing above-mentioned 1st laser processing groove formation process has enlargedly been shown in Fig. 5 (a) and (b), Fig. 5 (a) is the cutaway view in the direction vertical with the 1st spacing track 22, and Fig. 5 (b) is the A-A line cutaway view in Fig. 5 (a).As shown in Fig. 5 (a) He (b), the degree of depth of the 1st laser processing groove 25 formed along the 1st spacing track 22 at the front 2a of optical device wafer 2 is set to 10 ~ 20% of the thickness of optical device wafer 2.Such as, when the thickness of optical device wafer 2 is 100 μm, it is preferably 10 ~ 20 μm by the depth-set of the 1st laser processing groove 25.When forming the 1st laser processing groove 25 at the front 2a of optical device wafer 2 along the 1st spacing track 22 in this wise, be the blind crack 251 of several μm along above-mentioned R face Formation Depth in the downside of the 1st laser processing groove 25.For the degree of depth of the 1st laser processing groove 25, when 10% of the thickness than optical device wafer 2 is shallow, be difficult to along the 1st laser processing groove 25, optical device wafer 2 be ruptured definitely, when 20% of the thickness than optical device wafer 2 is dark, the impact being formed in the crackle 251 on the downside of the 1st laser processing groove 25 becomes large, and therefore the preferred depth-set by the 1st laser processing groove 25 is 10 ~ 20% of the thickness of optical device wafer 2.
Processing conditions in above-mentioned 1st laser processing groove formation process such as sets as shown below.
Light source: semiconductor pumped solid-state laser device (Nd:YAG)
Wavelength: 355nm pulse laser
Repetition rate: 200kHz
Average output: 1.4W
Focal point diameter:
Processing feed speed: 300mm/ second
By implementing the 1st laser processing groove formation process according to above-mentioned processing conditions, can Formation Depth be the 1st laser processing groove 25 of 15 μm thus.
Further, above-mentioned 1st laser processing groove formation process is implemented along all 1st spacing tracks 22 be formed on optical device wafer 2.
After implementing above-mentioned 1st laser processing groove formation process along all 1st spacing tracks 22 be formed on optical device wafer 2, the 2nd laser processing groove formation process be implemented as follows: from the face side of optical device wafer 2 along the 2nd spacing track 23 irradiating laser light, forms the 2nd laser processing groove as break origins in the front of optical device wafer 2.The laser processing device 3 shown in above-mentioned Fig. 3 can be used to implement the 2nd laser processing groove formation process.Namely, after implementing above-mentioned 1st laser processing groove formation process, make chuck table 31 rotate 90 degree, along the 2nd spacing track 23 irradiating laser light formed on the direction vertical with above-mentioned 1st spacing track 22, form the 2nd laser processing groove as break origins in the front of optical device wafer 2.
In order to implement the 2nd laser processing groove formation process, as shown in Fig. 6 (a), chuck table 31 is moved to the laser light irradiation region at concentrator 322 place of laser light irradiation unit 32, and the 2nd predetermined spacing track 23 is positioned immediately below concentrator 322.Now, as shown in Fig. 6 (a), optical device wafer 2 is oriented to, and one end of the 2nd spacing track 23 (being left end in Fig. 6 (a)) is positioned at immediately below concentrator 322.Then, as shown in Fig. 6 (a), near the front 2a (upper surface) of focal point P alignment light device wafer 2 making the pulse laser light irradiated from concentrator 322.Then, irradiate pulse laser light optical device wafer 2 to absorbefacient wavelength from the concentrator 322 of laser light irradiation unit 32, make chuck table 31 move up with predetermined processing feed speed side shown in arrow X1 in Fig. 6 (a) simultaneously.Then, as shown in Fig. 6 (b), when the other end (being right-hand member in Fig. 6 (b)) of the 2nd spacing track 23 arrives position immediately below concentrator 322, stop irradiated with pulse laser light, and it is mobile that chuck table 31 is stopped.Its result, as shown in Fig. 6 (b), at the front 2a of optical device wafer 2, defines the 2nd laser processing groove 26 as break origins along spacing track 23.
The cutaway view representing the important part of the optical device wafer 2 after implementing above-mentioned 2nd laser processing groove formation process has enlargedly been shown in Fig. 7 (a) and (b), Fig. 7 (a) is the cutaway view in the direction vertical with the 2nd spacing track 23, and Fig. 7 (b) is the B-B line cutaway view in Fig. 7 (a).As shown in Fig. 7 (a) He (b), the degree of depth of the 2nd laser processing groove 26 formed along the 2nd spacing track 23 at the front 2a of optical device wafer 2 is set to the degree of depth dark 40 ~ 60% than the 1st laser processing groove 25.Such as, when the thickness of the 1st laser processing groove 25 is 10 ~ 20 μm, it is preferably 14 ~ 32 μm by the depth-set of the 2nd laser processing groove 26.Like this, by by the depth-set of the 2nd laser processing groove 26 being the degree of depth dark 40 ~ 60% than the 1st laser processing groove 25, thus as shown in Fig. 7 (a) He (b), the bottom of the 2nd laser processing groove 26 than the blind crack 251 be formed on the downside of the 1st laser processing groove 25 more on the lower.In addition, when forming the 2nd laser processing groove 26 along the 2nd spacing track 23 in this wise on optical device wafer 2, form blind crack 261 in the downside of the 2nd laser processing groove 26.
Processing conditions in above-mentioned 2nd laser processing groove formation process such as sets as shown below.
Light source: semiconductor pumped solid-state laser device (Nd:YAG)
Wavelength: 355nm pulse laser
Repetition rate: 200kHz
Average output: 2.5W
Focal point diameter:
Processing feed speed: 300mm/ second
By implementing the 2nd laser processing groove formation process according to above-mentioned processing conditions, can Formation Depth be the 2nd laser processing groove 26 of 25 μm thus.
Further, above-mentioned 2nd laser processing groove formation process is implemented along all 2nd spacing tracks 23 be formed on optical device wafer 2.
Then, the 1st breaking step of breaking be implemented as follows: the 1st spacing track 22 along the optical device wafer 2 after implementing above-mentioned 1st laser processing groove formation process and the 2nd laser processing groove formation process applies external force, optical device wafer 2 is ruptured along the 1st laser processing groove 25, and the 1st laser processing groove 25 is formed along the 1st spacing track 22.The wafer breakage device 4 shown in Fig. 8 is used to implement the 1st breaking step of breaking.Wafer breakage device 4 shown in Fig. 8 possesses pedestal 41 and travelling carriage 42, and this travelling carriage 42 the mode of movement can be provided on this pedestal 41 in direction shown by arrow Y.Pedestal 41 is formed as rectangular shape, and the both sides upper surface of this pedestal 41 is equipped with two guide rails 411,412 in parallel to each other along direction shown by arrow Y.Travelling carriage 42 is can the mode of movement be provided on these two guide rails 411,412.Travelling carriage 42 moves in direction shown by arrow Y by means of mobile unit 43.Travelling carriage 42 is equipped the framework holding unit 44 for keeping above-mentioned ring-type frame F.Frame holding unit 44 has: cylindric main body 441; Be located at the frame holding member 442 of the ring-type of the upper end of this main body 441; And be disposed in the multiple fixtures 443 as fixed cell of periphery of this frame holding member 442.The frame holding unit 44 of formation like this is fixed the ring-type frame 5 be placed on frame holding member 442 by fixture 443.In addition, the wafer breakage device 4 shown in Fig. 8 possesses the rotating unit 45 that above-mentioned frame holding unit 44 is rotated.This rotating unit 45 is formed by with lower part: be disposed in the pulse motor 451 on above-mentioned travelling carriage 42; Belt wheel 452, it is assemblied on the rotating shaft of this pulse motor 451; And endless belt 453, it is wound in this belt wheel 452 and cylindric main body 441.The rotating unit 45 of formation like this makes frame holding unit 44 rotate by driving pulse motor 451 via belt wheel 452 and endless belt 453.
Wafer breakage device 4 shown in Fig. 8 possesses tension force applying unit 46, this tension force applying unit 46 sun adjuster part wafer 2 on the direction vertical with the 1st spacing track 22 or the 2nd spacing track 23 acts on tensile force, wherein, this optical device wafer 2 is supported on ring-type frame F across cutting belt T, and this ring-type frame F is then held on the frame holding member 442 of above-mentioned ring-type.Tension force applying unit 46 is configured in the frame holding member 442 of ring-type.This tension force applying unit 46 possesses the 1st absorption holding member 461 and the 2nd absorption holding member 462, and described 1st absorption holding member 461 possesses rectangular holding surface longer on the direction vertical with arrow Y-direction with the 2nd absorption holding member 462.1st absorption holding member 461 is formed with multiple adsorption hole 461a, the 2nd absorption holding member 462 is formed with multiple adsorption hole 462a.Multiple adsorption hole 461a with 462a is communicated with not shown absorbing unit.In addition, the 1st absorption holding member 461 and the 2nd absorption holding member 462 are configured to move in arrow Y-direction respectively by means of not shown mobile unit.
Wafer breakage device 4 shown in Fig. 8 possesses the detecting unit 47 for the 1st spacing track 22 and the 2nd spacing track 23 detecting optical device wafer 2, wherein, this optical device wafer 2 is supported on across cutting belt T on the ring-type frame F that kept by the frame holding member 442 of above-mentioned ring-type.Detecting unit 47 is installed on the support column 471 of the L-shaped be disposed on pedestal 41.This detecting unit 47 is made up of optical system and imaging apparatus (CCD) etc., and this detecting unit 47 is configured in the top position place of mentioned strain applying unit 46.1st spacing track 22 and the 2nd spacing track 23 of the detecting unit 47 sun adjuster part wafer 2 of formation like this are taken, and convert thereof into the signal of telecommunication and be sent to not shown control unit, wherein, this optical device wafer 2 is supported on across cutting belt T on the ring-type frame F that kept by the frame holding member 442 of above-mentioned ring-type.
With reference to Fig. 9, the 1st breaking step of breaking using above-mentioned wafer separation device 4 to implement is described.
As shown in Fig. 9 (a), the ring-type frame F assembling cutting belt T is placed on frame holding member 442, and utilize fixture 443 to be fixed on frame holding member 442 by this ring-type frame F, wherein, cutting belt T pastes the optical device wafer 2 after implementing above-mentioned 1st laser processing groove formation process and the 2nd laser processing groove formation process.Then, mobile unit 43 is worked, make travelling carriage 42 upper mobile in direction shown by arrow Y (with reference to Fig. 8), as shown in Fig. 9 (a), the holding surface and the 2nd that one article of the 1st spacing track 22 (being the spacing track of high order end in the illustrated embodiment) be formed on optical device wafer 2 is positioned to form the 1st absorption holding member 461 of tension force applying unit 46 is adsorbed between the holding surface of holding member 462.Now, take the 1st spacing track 22 by detecting unit 47, the position alignment between the holding surface that the holding surface and the 2nd of carrying out the 1st absorption holding member 461 adsorbs holding member 462.Like this, after between the holding surface of adsorbing holding member 462 in the holding surface and the 2nd one article of the 1st spacing track 22 being positioned the 1st absorption holding member 461, make not shown absorbing unit work, make adsorption hole 461a and 462a negative pressure, thus, across cutting belt T, optical device wafer 2 absorption is held in the holding surface of the 1st absorption holding member 461 and the holding surface of the 2nd absorption holding member 462 (maintenance operation).
After implementing above-mentioned maintenance operation, make the not shown mobile unit work of formation tension force applying unit 46, make the 1st absorption holding member 461 and the 2nd adsorb holding member 462 and move towards the direction be separated from each other as shown in Fig. 9 (b).Its result, on the 1st spacing track 22 between the holding surface that the holding surface and the 2nd being located in the 1st absorption holding member 461 adsorbs holding member 462, act on tensile force along the direction vertical with the 1st spacing track 22, optical device wafer 2 becomes break origins mode with the 1st laser processing groove 25 ruptures (the 1st breaking step of breaking) along the 1st spacing track 22.By implementing the 1st breaking step of breaking, cutting belt T is stretched slightly.In the 1st breaking step of breaking, define the 1st laser processing groove 25 along the 1st spacing track 22 due to optical device wafer 2 thus reduced intensity, therefore, adsorb holding member 462 by making the 1st absorption holding member 461 and the 2nd and move about 0.5mm to the direction be separated from each other, the mode that optical device wafer 2 can be made to become break origins with the 1st laser processing groove 25 be formed on optical device wafer 2 ruptures along the 1st spacing track 22.
After implementing the 1st breaking step of breaking ruptured along one article of the 1st spacing track 22 be formed on optical device wafer 2 in this wise, the absorption removing above-mentioned 1st absorption holding member 461 and the 2nd absorption holding member 462 sun adjuster part wafer 2 keeps.Then, mobile unit 43 is worked, make the amount that travelling carriage 42 is corresponding at the upper interval that is mobile and the 1st spacing track 22 of direction shown by arrow Y (with reference to Fig. 8), the holding surface and the 2nd the 1st adjacent for the 1st spacing track 22 after implementing above-mentioned breaking step of breaking spacing track 22 being positioned the 1st absorption holding member 461 forming tension force applying unit 46 is adsorbed between the holding surface of holding member 462.Then, above-mentioned maintenance operation and the 1st breaking step of breaking is implemented.
After as above above-mentioned maintenance operation and breaking step of breaking being implemented to all 1st spacing tracks 22 be formed on optical device wafer 2, implement the 2nd breaking step of breaking, in the 2nd breaking step of breaking, the 2nd spacing track 23 along optical device wafer 2 applies external force, along the 2nd laser processing groove 26, optical device wafer 2 is ruptured, wherein, the 2nd laser processing groove 26 is formed along the 2nd spacing track 23.In the 2nd breaking step of breaking, from implementing the state of the 1st breaking step of breaking, rotating unit 45 is worked, and make frame holding unit 44 rotate 90 degree.Its result, the optical device wafer 2 be held on the frame holding member 442 of frame holding unit 44 also rotates 90 degree, the holding surface and the 2nd being positioned to the 2nd spacing track 23 adsorb with the 1st holding member 461 adsorbs the parallel state of the holding surface of holding member 462, wherein, the 2nd spacing track 23 is formed in and is formed at predetermined direction and implements on the vertical direction (vertical with directional plane 21) of the 1st spacing track 22 after above-mentioned 1st breaking step of breaking.
Then, mobile unit 43 is worked, make travelling carriage 472 upper mobile in direction shown by arrow Y (with reference to Fig. 8), as shown in Figure 10 (a), the holding surface and the 2nd that one article of the 2nd spacing track 23 (being the spacing track of high order end in the illustrated embodiment) be formed on optical device wafer 2 is positioned to form the 1st absorption holding member 461 of tension force applying unit 46 is adsorbed between the holding surface of holding member 462.Like this, the holding surface and the 2nd that one article of the 2nd spacing track 23 is positioned the 1st absorption holding member 461 is adsorbed between the holding surface of holding member 462, afterwards, make not shown absorbing unit work, make adsorption hole 461a and 462a negative pressure, thus, across cutting belt T, optical device wafer 2 absorption is held in the holding surface of the 1st absorption holding member 461 and the holding surface of the 2nd absorption holding member 462 (maintenance operation).
After implementing above-mentioned maintenance operation, make the not shown mobile unit work of formation tension force applying unit 46, make the 1st absorption holding member 461 and the 2nd adsorb holding member 462 and move towards the direction be separated from each other as shown in Figure 10 (b).Its result, on the 2nd spacing track 23 between the holding surface that the holding surface and the 2nd being located in the 1st absorption holding member 461 adsorbs holding member 462, act on tensile force along the direction vertical with the 2nd spacing track 23, optical device wafer 2 becomes break origins mode with the 2nd laser processing groove 26 ruptures (the 2nd breaking step of breaking) along the 2nd spacing track 23.Like this, in the 2nd breaking step of breaking, optical device wafer 2 becomes break origins mode with the 2nd laser processing groove 26 ruptures along the 2nd spacing track 23, and as mentioned above, 2nd laser processing groove 26 is formed as the bottom of the 2nd laser processing groove 26 than the blind crack 251 be formed on the downside of the 1st laser processing groove 25 more on the lower (with reference to Fig. 7 (a) and (b)), thus can not be subject to the impact of the crackle 251 formed along R face.Therefore, vertical with front 2a and back side 2b along the plane of disruption defining the optical device wafer 2 that the 2nd spacing track 23 after the 2nd laser processing groove 26 ruptures.In addition, though define blind crack 261 in the downside of the 2nd laser processing groove 26, because crackle 261 is formed as almost parallel with R face, the impact in R face can not be therefore subject to.
Above, describe the present invention according to illustrated execution mode, but the present invention is not limited only to execution mode, various distortion can be carried out in main scope of the present invention.Such as, in the above-described embodiment, for the 1st laser processing groove formation process and the 2nd laser processing groove formation process, show following example: from the face side irradiating laser light of optical device wafer, the 1st laser processing groove and the 2nd laser processing groove is formed in the front of optical device wafer, but the 1st laser processing groove formation process and the 2nd laser processing groove formation process also from the rear side irradiating laser light of optical device wafer, thus can form the 1st laser processing groove and the 2nd laser processing groove at the back side of optical device wafer.
Claims (2)
1. the dividing method of an optical device wafer, optical device wafer is divided into each optical device along the 1st spacing track and the 2nd spacing track by this dividing method, wherein, described optical device wafer is in the front of sapphire substrate, in the region marked off by multiple 1st spacing track parallel with directional plane and multiple 2nd spacing tracks vertical with directional plane, be formed with optical device, wherein, described sapphire substrate is on the direction vertical with representing the directional plane of sapphire crystal orientation and be formed obliquely the crystallizing layer as R face with front and back, the feature of this dividing method is, comprise following operation:
1st laser processing groove formation process, from the front of optical device wafer or rear side along the 1st spacing track irradiating laser light, forms the 1st laser processing groove as break origins in the front of optical device wafer or the back side;
2nd laser processing groove formation process, from the front of optical device wafer or rear side along the 2nd spacing track irradiating laser light, forms the 2nd laser processing groove as break origins in the front of optical device wafer or the back side;
1st breaking step of breaking, the 1st spacing track along the optical device wafer implemented after the 1st laser processing groove formation process and the 2nd laser processing groove formation process applies external force, optical device wafer is ruptured along the 1st laser processing groove, and wherein, the 1st laser processing groove is formed along the 1st spacing track; And
2nd breaking step of breaking, the 2nd spacing track along the optical device wafer implemented after the 1st laser processing groove formation process and the 2nd laser processing groove formation process applies external force, optical device wafer is ruptured, wherein along the 2nd laser processing groove, 2nd laser processing groove is formed along the 2nd spacing track
The degree of depth of the 2nd laser processing groove is set to darker than the degree of depth of the 1st laser processing groove.
2. the dividing method of optical device wafer according to claim 1, wherein,
The degree of depth that the degree of depth of the 1st laser processing groove is set to the 10 ~ 20%, 2nd laser processing groove of the thickness of optical device wafer is set to the degree of depth dark 40 ~ 60% than the 1st laser processing groove.
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| JP6594699B2 (en) * | 2015-08-18 | 2019-10-23 | 浜松ホトニクス株式会社 | Processing object cutting method and processing object cutting apparatus |
| DE112016003761T5 (en) * | 2015-08-18 | 2018-05-03 | Hamamatsu Photonics K.K. | Laser processing device and laser processing method |
| JP6510933B2 (en) * | 2015-08-21 | 2019-05-08 | 株式会社ディスコ | Optical device wafer processing method |
| CN106624389A (en) * | 2017-02-22 | 2017-05-10 | 西安交通大学 | Optical fiber cutting device and method based on ultra-short pulse lasers |
| CN110064846B (en) * | 2019-04-24 | 2020-06-02 | 北京理工大学 | Method for machining one-way flowing surface of liquid based on electronic dynamic regulation and control |
| CN110625267A (en) * | 2019-08-22 | 2019-12-31 | 大族激光科技产业集团股份有限公司 | Method for processing sapphire substrate LED wafer and laser device |
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| JP3580631B2 (en) * | 1996-02-29 | 2004-10-27 | 京セラ株式会社 | Single crystal sapphire substrate, method of dividing single crystal sapphire, and single crystal sapphire body |
| DE69714627T2 (en) * | 1996-02-29 | 2002-12-05 | Kyocera Corp., Kyoto | Sapphire single crystal, its application as a substrate in a semiconductor laser diode and process for its manufacture |
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