TWI774828B - processing methods - Google Patents

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TWI774828B
TWI774828B TW107128938A TW107128938A TWI774828B TW I774828 B TWI774828 B TW I774828B TW 107128938 A TW107128938 A TW 107128938A TW 107128938 A TW107128938 A TW 107128938A TW I774828 B TWI774828 B TW I774828B
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workpiece
holding
suction
held
dividing
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TW107128938A
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TW201912282A (en
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服部奈緒
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日商迪思科股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/007Use, recovery or regeneration of abrasive mediums
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • B28D5/0094Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work the supporting or holding device being of the vacuum type
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • B28D5/023Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with a cutting blade mounted on a carriage
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043Making grooves, e.g. cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67132Apparatus for placing on an insulating substrate, e.g. tape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Removal Of Specific Substances (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)

Abstract

[課題]提供一種與習知相比,不會對被加工物造成衝撞而可將被加工物分割的加工方法。   [解決手段]本發明之加工方法由於具備有:雷射加工步驟,其係沿著分割預定線(2)對被加工物(1)施行雷射加工;及分割步驟,其係在實施雷射加工步驟之後,藉由切削被加工物(1)的厚度方向的一部分來進行分割,因此,與使用制動裝置等之習知之加工方法相比,可減小對被加工物(1)的衝撞,且可將被加工物(1)良好地分割成各個晶片。此外,在分割步驟中,係僅以切削刀(26)切削被加工物(1)的厚度方向的一部分即可,因此,與以切削刀(26)將被加工物(1)以厚度方向完全切斷的情形相比,可加快加工進給速度,晶片的生產性會提升。[Problem] To provide a processing method capable of dividing the workpiece without colliding with the workpiece as compared with the prior art. [Solution] The processing method of the present invention includes: a laser processing step of performing laser processing on the workpiece (1) along the dividing line (2); and a dividing step of performing laser processing After the processing step, the workpiece (1) is divided by cutting a part of the thickness direction, so that the impact on the workpiece (1) can be reduced compared with the conventional processing method using a braking device or the like, Furthermore, the workpiece (1) can be favorably divided into individual wafers. In addition, in the dividing step, only a part of the workpiece (1) in the thickness direction needs to be cut with the cutting blade (26). Compared with the case of cutting, the processing feed rate can be increased, and the productivity of the wafer can be improved.

Description

加工方法processing methods

本發明係關於將被加工物分割成各個晶片的被加工物之加工方法。The present invention relates to a method for processing a workpiece in which the workpiece is divided into individual wafers.

晶圓等被加工物係在藉由其表面的格子狀的分割預定線予以區劃的區域分別形成有元件,沿著分割預定線進行分割,藉此被分割成具有元件的各個晶片。以將被加工物分割成各個晶片的方法而言,係採用對被加工物施行雷射加工而形成分割起點之後,對被加工物賦予外力來分割被加工物的方法。A workpiece such as a wafer is divided into wafers each having elements by forming elements in regions demarcated by grid-like planned dividing lines on the surface thereof, and dividing along the planned dividing lines. As the method of dividing the workpiece into individual wafers, a method of dividing the workpiece by applying an external force to the workpiece after forming the starting point of division by laser processing the workpiece is employed.

以雷射加工之例而言,例如有一種藉由對被加工物照射脈衝雷射光線,形成由細孔、及屏蔽細孔的非晶質所構成的潛盾隧道的加工方法(參照下述專利文獻1)。此外,以其他雷射加工之例而言,亦有一種照射對被加工物具透過性的波長的雷射束而在被加工物的內部形成改質層的加工方法(參照下述專利文獻2)。接著,對被加工物施行雷射加工之後,例如,使用制動裝置對被加工物施加外力來進行分割(參照下述專利文獻3及4)。 [先前技術文獻] [專利文獻]As an example of laser processing, for example, there is a processing method of forming a submerged shield tunnel composed of pores and amorphous materials that shield the pores by irradiating the workpiece with pulsed laser light (refer to the following). Patent Document 1). In addition, as another example of laser processing, there is also a processing method in which a modified layer is formed inside the workpiece by irradiating a laser beam having a wavelength that is transparent to the workpiece (refer to the following Patent Document 2). ). Next, after the laser processing is performed on the workpiece, for example, the workpiece is divided by applying an external force to the workpiece using a braking device (refer to the following Patent Documents 3 and 4). [Prior Art Literature] [Patent Literature]

[專利文獻1]日本特開2014-221483號公報   [專利文獻2]日本專利第3408805號公報   [專利文獻3]日本特開2009-148982號公報   [專利文獻4]日本特開2013-38434號公報[Patent Document 1] JP 2014-221483 A

(發明所欲解決之課題)(The problem to be solved by the invention)

但是,在制動裝置中,係由被加工物的上方使刀刃(按壓構件)下降,使其衝撞被加工物而以該打擊來進行分割,因此若以不適當的條件進行制動,有使被加工物破損之虞,更加期望一種對被加工物不會造成衝撞的分割方法。However, in the braking device, the blade (pressing member) is lowered from the upper side of the workpiece to collide with the workpiece to be divided by the blow. Therefore, if the braking is performed under inappropriate conditions, the workpiece may be damaged. There is a risk of damage to the object, and a segmentation method that does not cause collision to the workpiece is more desirable.

本發明之目的在提供一種與習知相比,不會對被加工物造成衝撞而可將被加工物分割的加工方法。    (解決課題之手段)An object of the present invention is to provide a processing method capable of dividing the workpiece without colliding with the workpiece as compared with the prior art. (Means to Solve Problems)

本發明係一種加工方法,其係設定有分割預定線之被加工物之加工方法,該加工方法具備有:雷射加工步驟,其係沿著該分割預定線照射對被加工物具透過性的波長的雷射束,對被加工物施行雷射加工;及分割步驟,其係在實施該雷射加工步驟之後,以切削刀沿著該分割預定線切削被加工物的厚度方向的一部分,藉此沿著該分割預定線分割被加工物,該分割步驟係以沿著該分割預定線的伸長方向伸長的支持部支持該分割預定線的兩側,並且該分割預定線的正下方並無須支持來實施。The present invention relates to a processing method, which is a method for processing a workpiece with a predetermined dividing line set, and the processing method includes: a laser processing step of irradiating a laser beam that is transparent to the workpiece along the predetermined dividing line. A laser beam of a wavelength is used to perform laser processing on the workpiece; and a dividing step is to cut a part of the thickness direction of the workpiece along the predetermined dividing line with a cutting blade after the laser processing step is performed. The workpiece is divided along the planned dividing line, and the dividing step is to support both sides of the planned dividing line with support portions extending along the extending direction of the planned dividing line, and there is no need to support directly below the planned dividing line. to implement.

較佳為在前述分割步驟中,在具有吸引保持面的保持平台上,透過具有與被加工物為同等以上的尺寸而且具有小於該吸引保持面的尺寸的支持治具,將被加工物載置於該吸引保持面,在被加工物的被保持面係貼著有具有大於該吸引保持面的尺寸的帶件,在該保持平台上,在透過該支持治具所載置的被加工物所黏著的該帶件覆蓋該吸引保持面的狀態下,以該保持平台吸引保持被加工物。Preferably, in the aforementioned dividing step, the workpiece is placed on the holding platform having the suction and holding surface through a support jig having a size equal to or greater than that of the workpiece and having a size smaller than the suction and holding surface. On the suction and holding surface, a tape with a size larger than the suction and holding surface is attached to the held surface of the workpiece, and on the holding platform, the workpiece placed through the support jig is placed. In a state where the adhered tape covers the suction and holding surface, the workpiece is sucked and held by the holding platform.

此外,較佳為在前述分割步驟中,係以治具平台直接吸引保持被加工物,該治具平台係包含支持被加工物的支持面,形成有對應前述分割預定線的溝槽,並且在以該溝槽予以區劃的各區域形成有吸引被加工物的吸引孔。In addition, it is preferred that in the aforementioned dividing step, the workpiece is directly attracted and held by a jig platform, the jig platform includes a support surface for supporting the workpiece, a groove corresponding to the aforementioned dividing line is formed, and Suction holes for sucking the workpiece are formed in each region defined by the grooves.

較佳為上述切削刀的前端的剖面形狀係V形狀。 (發明之效果)Preferably, the cross-sectional shape of the tip of the cutting blade is a V-shape. (effect of invention)

本發明之加工方法係具備有:沿著分割預定線對被加工物施行雷射加工的雷射加工步驟;及藉由切削被加工物的厚度方向的一部分來進行分割的分割步驟,分割步驟係以沿著分割預定線的伸長方向伸長的支持部支持分割預定線的兩側,並且分割預定線的正下方並無須支持來實施,因此與習知之加工方法相比,可減小對被加工物的衝撞,可將被加工物良好地分割成各個晶片。此外,在分割步驟中,若僅以切削刀切削被加工物的厚度方向的一部分即可,因此與以切削刀將被加工物以厚度方向完全切斷的情形相比,可加快加工進給速度,晶片的生產性會提升。The processing method of the present invention includes: a laser processing step of performing laser processing on a workpiece along a line to be divided; and a dividing step of dividing the workpiece by cutting a part of the thickness direction of the workpiece, and the dividing step is a The two sides of the planned dividing line are supported by the support parts extending along the extending direction of the planned dividing line, and the support is not required directly below the planned dividing line. Therefore, compared with the conventional processing method, it is possible to reduce the impact on the workpiece. The collision can well divide the workpiece into individual wafers. In addition, in the dividing step, only a part of the workpiece in the thickness direction can be cut with the cutting blade. Therefore, compared with the case where the workpiece is completely cut in the thickness direction with the cutting blade, the machining feed rate can be increased. , the productivity of the wafer will be improved.

在上述分割步驟中,在具有吸引保持面的保持平台上,透過具有與被加工物為同等以上的尺寸而且具有小於吸引保持面的尺寸的支持治具,以保持平台吸引保持被加工物,因此可減小分割時對被加工物的衝撞,可將被加工物良好地分割成各個晶片。In the above-mentioned dividing step, on the holding platform having the suction and holding surface, the holding platform sucks and holds the workpiece through a support jig that has a size equal to or greater than that of the workpiece and has a size smaller than that of the suction and holding surface. The impact on the workpiece at the time of division can be reduced, and the workpiece can be favorably divided into individual wafers.

此外,在上述分割步驟中,係形成為以治具平台直接吸引保持被加工物的構成,該治具平台係包含支持被加工物的支持面,形成有對應上述分割預定線的溝槽,並且在以溝槽予以區劃的各區域形成有吸引被加工物的吸引孔,因此即使為未貼著有帶件的被加工物,亦可減小分割時對被加工物的衝撞,可將被加工物良好地分割成各個晶片。In addition, in the above-mentioned dividing step, the workpiece is directly sucked and held by a jig platform, and the jig platform includes a support surface for supporting the workpiece, and a groove corresponding to the above-mentioned dividing line is formed, and Suction holes for sucking the workpiece are formed in each area divided by grooves. Therefore, even if the workpiece is not attached with a tape, the impact on the workpiece during division can be reduced, and the workpiece can be processed. The object is well divided into individual wafers.

若上述切削刀的前端的剖面形狀為V形狀,在實施分割步驟時,即使以被加工物的厚度方向切入的深度淺,亦可將經雷射加工的被加工物以厚度方向效率佳地進行分割。If the cross-sectional shape of the tip of the cutting blade is a V shape, even if the depth of incision in the thickness direction of the workpiece is shallow when the dividing step is performed, the laser-processed workpiece can be efficiently processed in the thickness direction. segmentation.

1 被加工物   圖1所示之被加工物1係矩形板狀的被加工物之一例,在其上面1a係設定格子狀的分割預定線2而形成有圖案。被加工物1之與上面1a為相反側的下面係形成為例如貼附帶件(tape)4的被保持面1b。被加工物1的材質係藉由例如包含石英玻璃或硼矽酸玻璃的各種玻璃、LT/LN(鉭酸鋰/鈮酸鋰)、SiC(矽碳化物)、Si(矽)、GaN(氮化鎵)、GaAs(砷化鎵)、藍寶石、陶瓷等所形成。被加工物1亦可為圓形板狀,而非侷限於矩形板狀。1 Object to be processed The object to be processed 1 shown in FIG. 1 is an example of a rectangular plate-shaped object to be processed, and a pattern is formed on the upper surface 1a of which grid-like dividing lines 2 are set. The lower surface of the workpiece 1 on the opposite side to the upper surface 1a is formed as, for example, a held surface 1b to which a tape 4 is attached. The material of the workpiece 1 is made of, for example, various glasses including quartz glass or borosilicate glass, LT/LN (lithium tantalate/lithium niobate), SiC (silicon carbide), Si (silicon), GaN (nitrogen) gallium), GaAs (gallium arsenide), sapphire, ceramics, etc. The workpiece 1 may be in the shape of a circular plate, not limited to the shape of a rectangular plate.

本實施形態所示之被加工物1係在將在中央具有開口的環狀框架3的開口閉塞而貼著的帶件4貼著被加工物1的被保持面1b,藉此透過帶件4而與框架3形成為一體予以支持。帶件4並未特別限定,使用例如在由聚烯烴或聚氯乙烯等所成之基材層積層有黏著層的2層構造的伸展薄片。本實施形態所示之被加工物1係設定有分割預定線2,但是亦可為未設定分割預定線2而未形成有圖案的被加工物。In the workpiece 1 shown in the present embodiment, the belt 4 is attached to the held surface 1b of the workpiece 1 by closing the opening of the annular frame 3 having an opening in the center, so that the belt 4 is passed through. And the frame 3 is formed as a whole to support. The tape 4 is not particularly limited, and for example, a stretched sheet of a two-layer structure in which an adhesive layer is laminated on a base material made of polyolefin, polyvinyl chloride, or the like is used. Although the to-be-processed object 1 shown in this embodiment is set with the line to be divided 2, the line to be divided 2 is not set and a to-be-processed object in which a pattern is not formed may be sufficient.

2 加工方法   圖2所示之雷射加工裝置10係用以實施後述之雷射加工步驟的雷射加工裝置之一例。雷射加工裝置10係具有裝置基座100,在裝置基座100之上係具備有:保持被加工物1且可旋轉的保持平台11;將保持平台11以加工進給方向(X軸方向)進行加工進給的加工進給手段13;及將保持平台11以分級進給方向(Y軸方向)進行分級進給的分級進給手段14。2. Processing method The laser processing apparatus 10 shown in FIG. 2 is an example of a laser processing apparatus for carrying out the later-described laser processing steps. The laser processing apparatus 10 has an apparatus base 100, and on the apparatus base 100 is provided: a holding table 11 that holds the workpiece 1 and is rotatable; The machining feeding means 13 for performing machining feeding; and the grading feeding means 14 for carrying out the grading feeding of the holding table 11 in the grading feeding direction (Y-axis direction).

保持平台11的上面係形成為保持被加工物1的保持面11a。在保持平台11的周緣係配設有複數個保持上述框架3的框架保持手段12。框架保持手段12係具備有:載置框架3的框架載置台120;及按壓被載置在框架載置台120的框架3的上面的夾具部121。The upper surface of the holding table 11 is formed as a holding surface 11a for holding the workpiece 1 . A plurality of frame holding means 12 for holding the above-mentioned frame 3 are arranged on the peripheral edge of the holding platform 11 . The frame holding means 12 is provided with: a frame mounting table 120 on which the frame 3 is mounted;

加工進給手段13係具備有:以X軸方向延伸的滾珠螺桿130;連接於滾珠螺桿130的一端的馬達131;與滾珠螺桿130呈平行延伸的一對導軌132;及可以X軸方向移動的X軸基座133。在X軸基座133的其中一面係支持有保持平台11,在X軸基座133的另一面係滑接一對導軌132,在形成在X軸基座133的中央部的螺帽螺合有滾珠螺桿130。藉由馬達131被驅動的滾珠螺桿130進行旋動,藉此X軸基座133可沿著導軌132以X軸方向移動,且將保持平台11以X軸方向進行加工進給。The machining feeding means 13 includes: a ball screw 130 extending in the X-axis direction; a motor 131 connected to one end of the ball screw 130; a pair of guide rails 132 extending parallel to the ball screw 130; The X-axis base 133 . The holding platform 11 is supported on one surface of the X-axis base 133 , a pair of guide rails 132 are slidably connected to the other surface of the X-axis base 133 , and a nut formed in the center of the X-axis base 133 is screwed with Ball screw 130. The ball screw 130 driven by the motor 131 rotates, whereby the X-axis base 133 can move along the guide rail 132 in the X-axis direction, and the holding platform 11 is processed and fed in the X-axis direction.

分級進給手段14係具備有:以Y軸方向延伸的滾珠螺桿140;連接於滾珠螺桿140的一端的馬達141;與滾珠螺桿140呈平行延伸的一對導軌142;及可以Y軸方向移動的Y軸基座143。在Y軸基座143的其中一面係透過加工進給手段13而支持保持平台11,在Y軸基座143的另一面係滑接一對導軌142,在形成在Y軸基座143的中央部的螺帽螺合有滾珠螺桿140。藉由馬達141被驅動的滾珠螺桿140進行旋動,藉此Y軸基座143可沿著導軌142以Y軸方向移動,且將保持平台11以Y軸方向進行分級進給。The stepwise feeding means 14 includes: a ball screw 140 extending in the Y-axis direction; a motor 141 connected to one end of the ball screw 140; a pair of guide rails 142 extending parallel to the ball screw 140; Y-axis base 143 . A pair of guide rails 142 are slidably connected to the other surface of the Y-axis base 143 , and are formed in the central portion of the Y-axis base 143 on one side of the Y-axis base 143 to support the holding table 11 through the processing and feeding means 13 . The nut is screwed with a ball screw 140. The ball screw 140 driven by the motor 141 rotates, whereby the Y-axis base 143 can move along the guide rail 142 in the Y-axis direction, and the holding platform 11 is graded and fed in the Y-axis direction.

在裝置基座100的Y軸方向後部側係立設有以Z軸方向延伸的側壁101。在側壁101的前方係具備有:對被加工物1施行雷射加工的雷射束照射手段15;及使雷射束照射手段15以Z軸方向作升降的升降手段17。雷射束照射手段15係具備有:以Y軸方向延伸的殼體150;及配設在殼體150的前端的聚光器151。在殼體150的內部係收容有將對被加工物1具透過性的波長的雷射束進行振盪的振盪器。在聚光器151的內部係內置有用以將由振盪器被振盪的雷射束進行聚光的聚光透鏡(未圖示)。A side wall 101 extending in the Z-axis direction is attached to the rear side in the Y-axis direction of the device base 100 . The front side of the side wall 101 is provided with the laser beam irradiation means 15 for performing laser processing on the workpiece 1 , and the elevating means 17 for raising and lowering the laser beam irradiation means 15 in the Z-axis direction. The laser beam irradiation means 15 includes: a housing 150 extending in the Y-axis direction; and a condenser 151 arranged at the front end of the housing 150 . Inside the casing 150 is accommodated an oscillator that oscillates a laser beam having a wavelength that transmits the workpiece 1 . A condenser lens (not shown) for condensing the laser beam oscillated by the oscillator is built in the condenser 151 .

在殼體150的前端而且鄰接聚光器151的位置,係配設有檢測應照射雷射束的區域(分割預定線2)的攝像手段16。攝像手段16係例如內置CCD畫像感測器的攝影機。攝像手段16係可將被保持在保持平台11的被加工物1由上方進行攝像,且進行圖案匹配等畫像處理,藉此檢測分割預定線2。At the front end of the housing 150 and at a position adjacent to the condenser 151 , the imaging means 16 for detecting the region to be irradiated with the laser beam (the line to divide 2 ) is disposed. The imaging means 16 is, for example, a camera with a built-in CCD image sensor. The imaging means 16 can detect the line to be divided 2 by capturing an image of the workpiece 1 held on the holding platform 11 from above, and performing image processing such as pattern matching.

升降手段17係具備有:以Z軸方向延伸的滾珠螺桿170;連接於滾珠螺桿170的一端的馬達171;與滾珠螺桿170呈平行延伸的一對導軌172;及支持雷射束照射手段15的升降板173。在升降板173的其中一面固定殼體150,在升降板173的另一面滑接一對導軌172,在形成在升降板173的中央部的螺帽螺合有滾珠螺桿170。藉由馬達171被驅動的滾珠螺桿170進行旋動,藉此升降板173可沿著導軌172以Z軸方向移動,使聚光器151上下移動,將雷射束的聚光位置調整至所希望的位置。The elevating means 17 includes: a ball screw 170 extending in the Z-axis direction; a motor 171 connected to one end of the ball screw 170; a pair of guide rails 172 extending parallel to the ball screw 170; Lifting plate 173 . The housing 150 is fixed to one surface of the lift plate 173 , a pair of guide rails 172 are slidably connected to the other surface of the lift plate 173 , and a ball screw 170 is screwed to a nut formed in the center of the lift plate 173 . The ball screw 170 driven by the motor 171 is rotated, whereby the lift plate 173 can move along the guide rail 172 in the Z-axis direction, so that the condenser 151 can be moved up and down, and the condensing position of the laser beam can be adjusted to the desired position s position.

(雷射加工步驟的第1例)   接著,使用雷射加工裝置10,沿著分割預定線2照射對被加工物1具透過性的波長的雷射束而對被加工物1施行雷射加工。例如使用具有球面像差的聚光透鏡而在以聚光透鏡所聚光的雷射束發生縱像差的狀態下,對被加工物照射雷射束。雷射加工步驟的第1例係被設定成例如下述加工條件1予以實施。(The first example of the laser processing step) Next, the laser processing apparatus 10 is used to irradiate a laser beam having a wavelength that is transparent to the workpiece 1 along the planned dividing line 2 to perform laser processing on the workpiece 1 . For example, using a condenser lens having spherical aberration, the object to be processed is irradiated with the laser beam in a state where longitudinal aberration occurs in the laser beam condensed by the condenser lens. The first example of the laser processing step is carried out under the following processing conditions 1, for example.

[加工條件1]   被加工物1的材質 :石英玻璃   被加工物1的厚度 :500μm   波長 :1064nm的脈衝雷射   平均輸出 :2W   重複頻率 :10kHz   加工進給速度 :100mm/s[Processing condition 1] Material of workpiece 1: Quartz glass Thickness of workpiece 1: 500μm Wavelength: 1064nm pulsed laser Average output: 2W Repetition frequency: 10kHz Machining feed rate: 100mm/s

如圖3所示,一將貼著有帶件4的被加工物1的被保持面1b側載置在保持平台11的保持面11a,並且將框架3載置在框架載置台120,即藉由夾具部121按壓框架3的上面來進行固定。接著,藉由圖2所示之加工進給手段13,使保持平台11以X軸方向移動,藉由攝像手段16來檢測應進行雷射加工的分割預定線2。之後,藉由分級進給手段14,一進行聚光器151與分割預定線2的Y軸方向的對位,即藉由升降手段17,使聚光器151以接近被加工物1的方向下降,且以將雷射束LB的聚光點的位置以被加工物1的厚度方向延伸的方式進行定位。As shown in FIG. 3, once the held surface 1b of the workpiece 1 to which the tape 4 is attached is placed on the holding surface 11a of the holding platform 11, and the frame 3 is placed on the frame placing table 120, the The upper surface of the frame 3 is pressed and fixed by the clip portion 121 . Next, the holding table 11 is moved in the X-axis direction by the processing feeding means 13 shown in FIG. 2 , and the planned dividing line 2 to be laser processed is detected by the imaging means 16 . After that, by the step-feeding means 14 , as soon as the alignment of the condenser 151 and the Y-axis direction of the planned dividing line 2 is performed, that is, by the raising and lowering means 17 , the condenser 151 is lowered in the direction of approaching the workpiece 1 . , and the position of the condensing point of the laser beam LB is positioned so as to extend in the thickness direction of the workpiece 1 .

一邊藉由圖2所示之加工進給手段13,將保持平台11以預定的加工進給速度(100mm/s)以X軸方向進行加工進給,雷射束照射手段15係一邊沿著圖1所示之分割預定線2,由被加工物1的上面1a側照射對被加工物1具透過性的波長(1064nm)的雷射束LB,沿著分割預定線2,形成複數以雷射束LB的照射方向伸長的圖4所示之細孔5。圖示之例中的細孔5係在被加工物1的被保持面1b形成開口6,形成為從上面1a朝向被保持面1b呈擴徑的微細的孔。因在被加工物1的內部形成細孔5,實施後述之分割步驟時,僅由上面1a側施加相對較小的外力,細孔5之擴徑之側(形成有開口6的被保持面1b側)變得容易壓寬,可良好分割被加工物1。While processing and feeding the holding table 11 in the X-axis direction at a predetermined processing feed speed (100 mm/s) by the processing and feeding means 13 shown in FIG. The planned dividing line 2 shown in 1 is irradiated with a laser beam LB having a wavelength (1064 nm) that is transparent to the work 1 from the upper surface 1a side of the workpiece 1, and along the planned dividing line 2, a plurality of laser beams are formed. The pore 5 shown in FIG. 4 is elongated in the irradiation direction of the beam LB. The pores 5 in the illustrated example form openings 6 in the held surface 1b of the workpiece 1, and are formed as fine holes that expand in diameter from the upper surface 1a toward the held surface 1b. Since the fine holes 5 are formed inside the workpiece 1, when the dividing step described later is performed, a relatively small external force is applied only from the upper surface 1a side, and the diameter-expanding side of the fine holes 5 (the held surface 1b where the opening 6 is formed) is applied. side) becomes easy to be widened, and the workpiece 1 can be divided well.

在細孔5的周圍,圍繞細孔5形成有變質的變質區域7。沿著分割預定線2的伸張方向,間歇反覆進行藉由照射雷射束LB所致之細孔5的形成,而形成複數細孔5。在鄰接的細孔5間係在一部分形成有裂痕。如上所示,一沿著圖1所示之全部分割預定線2形成複數由細孔5及圍繞此的變質區域7所構成的潛盾隧道,雷射加工步驟的第1例即完成。細孔5係形成為例如φ1μm,在第1例中,將被加工物1的加工進給速度設定為100mm/s、雷射束LB的重複頻率設定為10kHz,藉此以10μm間距沿著分割預定線2形成細孔3。其中,在第1例中,為方便說明起見,在圖4中以模式顯示細孔5或變質區域7而明確圖示,但是實際加工形成的細孔5或變質區域7並不清楚而不明顯。Around the pore 5 , a degenerated region 7 is formed around the pore 5 . The formation of the pores 5 by irradiating the laser beam LB is intermittently repeated along the extending direction of the line to divide 2, and the plurality of pores 5 are formed. A crack is formed in part between the adjacent pores 5 . As described above, the first example of the laser processing step is completed when a plurality of submerged shield tunnels constituted by pores 5 and modified regions 7 surrounding them are formed along all planned dividing lines 2 shown in FIG. 1 . The pores 5 are formed, for example, φ1 μm, and in the first example, the processing feed speed of the workpiece 1 is set to 100 mm/s, and the repetition frequency of the laser beam LB is set to 10 kHz, thereby dividing along the 10 μm pitch at 10 μm. The predetermined line 2 forms the fine hole 3 . In the first example, for convenience of explanation, the pores 5 or the degraded regions 7 are shown schematically in FIG. 4 to be clearly illustrated, but the pores 5 or degraded regions 7 formed by actual processing are not clearly understood. obvious.

在上述雷射加工步驟的第1例中,為了在被加工物1的內部形成良好的潛盾隧道,例如圖5所示,以將聚光透鏡152的開口數(NA)除以被加工物1的折射率(N)後的值(S=NA/N)被設定在例如0.05~0.2的範圍為佳。在此,說明開口數(NA)、與折射率(N)、與將開口數(NA)除以折射率(N)後的值(S=NA/N)的關係性。通過聚光透鏡152的雷射束LB係相對光軸O具有角度θ而予以聚光,此時的sinθ為聚光透鏡的開口數(NA)(N=sinθ)。藉由聚光透鏡152被聚光的雷射束LB被照射在被加工物1時,雷射束LB係由角度θ折射成角度α而被聚光在聚光點P。相對光軸O的角度α係依被加工物1的折射率(N)而異,該折射率(N)係將sinθ除以sinα後的值(N=sinθ/sinα),因此將開口數(NA)除以折射率(N)後的值(S=NA/N)係成為sinα。因此,若將sinα設定在0.05~0.2的範圍(0.05≦sinα≦0.2)即可。In the first example of the above-mentioned laser processing step, in order to form a good shield tunnel inside the workpiece 1, as shown in FIG. 5, for example, the number of apertures (NA) of the condenser lens 152 is divided by the workpiece The value (S=NA/N) after the refractive index (N) of 1 is preferably set in the range of, for example, 0.05 to 0.2. Here, the relationship between the number of apertures (NA), the refractive index (N), and the value obtained by dividing the number of apertures (NA) by the refractive index (N) (S=NA/N) will be described. The laser beam LB passing through the condenser lens 152 is condensed at an angle θ with respect to the optical axis O, and sin θ at this time is the number of apertures (NA) of the condenser lens (N=sin θ). When the laser beam LB condensed by the condensing lens 152 is irradiated on the workpiece 1 , the laser beam LB is refracted by the angle θ to an angle α and condensed at the condensing point P. FIG. The angle α relative to the optical axis O varies depending on the refractive index (N) of the workpiece 1. The refractive index (N) is the value obtained by dividing sinθ by sinα (N=sinθ/sinα), so the number of openings ( The value (S=NA/N) obtained by dividing NA) by the refractive index (N) becomes sinα. Therefore, it is sufficient to set sinα in the range of 0.05 to 0.2 (0.05≦sinα≦0.2).

接著,說明應使將開口數(NA)除以折射率(N)後的值(S=NA/N)設定在0.05~0.2的範圍的依據。具體而言,將厚度為500μm、由石英玻璃所成之被加工物1(折射率(N):1.45),將聚光透鏡152的開口數(NA)分別設定為例如0.05、0.1、0.15、0.2、0.25、0.3、0.35、0.4,以上述加工條件1形成潛盾隧道,來判定其良否。若開口數(N)為0.05,將開口數(NA)除以被加工物1的折射率(N)後的值(S=NA/N)成為0.035,確認出形成在被加工物1的內部的潛盾隧道為不良。此外,若開口數(N)分別設定為0.3、0.35、0.4,將開口數(NA)除以被加工物1的折射率(N)後的值(S=NA/N)成為0.207、0.241、0.276,潛盾隧道成為為不良,尤其在開口數(N)為0.35、0.4的情形下,確認出發生孔洞。另一方面,若開口數(N)分別設定為0.05、0.1、0.15、0.2、0.25,除以被加工物1的折射率(N)後的值(S=NA/N)成為0.069、0.103、0.138、0.172,確認出在被加工物1的內部形成良好的潛盾隧道。因此,若為開口數(NA)被設定為0.1~0.25的範圍的聚光透鏡152,將開口數(NA)除以折射率(N)後的值(S=NA/N)成為0.05~0.2的範圍,因此確認出可形成良好的潛盾隧道。在雷射加工步驟的第1例中,在雷射束LB產生縱像差,在雷射束LB的聚光點P以被加工物1的厚度方向延伸的狀態下,對被加工物1照射雷射束LB。每逢1脈衝的雷射束LB被照射至被加工物1,即形成1個細孔5,因此僅將保持平台11一度進行加工進給,即可形成以被加工物1的厚度方向伸長的變質區域7。其中,在第1例中,係除了如上所述使用具有球面像差的聚光透鏡152之外,亦可藉由在聚光透鏡的上游側或下游側配設透鏡而生成球面像差,亦可將自身具有預定擴散角的雷射束LB由振盪器進行振盪而在聚光透鏡聚光。Next, the reason for setting the value (S=NA/N) obtained by dividing the number of apertures (NA) by the refractive index (N) in the range of 0.05 to 0.2 will be described. Specifically, for the workpiece 1 (refractive index (N): 1.45) made of quartz glass with a thickness of 500 μm, the number of apertures (NA) of the condenser lens 152 is set to, for example, 0.05, 0.1, 0.15, 0.2, 0.25, 0.3, 0.35, 0.4, forming a submerged shield tunnel with the above processing condition 1, to judge whether it is good or not. If the number of openings (N) is 0.05, the value (S=NA/N) obtained by dividing the number of openings (NA) by the refractive index (N) of the workpiece 1 becomes 0.035, and it is confirmed that it is formed inside the workpiece 1 The submerged shield tunnel is bad. In addition, if the number of openings (N) is set to 0.3, 0.35, and 0.4, respectively, the value (S=NA/N) obtained by dividing the number of openings (NA) by the refractive index (N) of the workpiece 1 becomes 0.207, 0.241, 0.276, the submerged shield tunnel became defective, and especially when the number of openings (N) was 0.35 and 0.4, the occurrence of holes was confirmed. On the other hand, if the number of openings (N) is set to 0.05, 0.1, 0.15, 0.2, and 0.25, respectively, the value (S=NA/N) obtained by dividing by the refractive index (N) of the workpiece 1 becomes 0.069, 0.103, 0.138, 0.172, it was confirmed that a good shield tunnel was formed inside the workpiece 1. Therefore, in the case of the condenser lens 152 in which the number of apertures (NA) is set in the range of 0.1 to 0.25, the value (S=NA/N) obtained by dividing the number of apertures (NA) by the refractive index (N) is 0.05 to 0.2 range, so it was confirmed that a good shield tunnel could be formed. In the first example of the laser processing step, longitudinal aberration occurs in the laser beam LB, and the object 1 is irradiated with the converging point P of the laser beam LB extending in the thickness direction of the object 1 . Laser beam LB. Each time the workpiece 1 is irradiated with one pulse of the laser beam LB, one fine hole 5 is formed. Therefore, only by processing and feeding the holding table 11 once, the workpiece 1 can be formed extending in the thickness direction of the workpiece 1 . Metamorphic zone 7. Among them, in the first example, in addition to using the condenser lens 152 having spherical aberration as described above, spherical aberration can also be generated by arranging a lens on the upstream side or downstream side of the condenser lens. The laser beam LB, which itself has a predetermined diffusion angle, can be oscillated by the oscillator to be condensed by the condenser lens.

(雷射加工步驟的第2例)   在上述雷射加工步驟的第1例中,係在被加工物1的內部形成有潛盾隧道,但是並非侷限於該情形,亦可如圖6所示,在被加工物1A的內部形成改質層8。在形成第1例的潛盾隧道的情形下,係使用具有球面像差的聚光透鏡152,但是在第2例中,係進行在被加工物1A的內部形成改質層8的加工,因此使用不具球面像差的聚光透鏡。亦即,雷射加工步驟的第2例係使用與上述雷射加工裝置10不同的光學系的雷射加工裝置(未圖示)來進行。雷射加工步驟的第2例係被設定為例如下述加工條件2來實施。(Second example of the laser processing step) In the first example of the above-mentioned laser processing step, the shield tunnel is formed inside the workpiece 1, but it is not limited to this case, and may be as shown in FIG. 6 , the modified layer 8 is formed inside the workpiece 1A. In the case of forming the shield tunnel in the first example, the condenser lens 152 having spherical aberration is used, but in the second example, the processing of forming the modified layer 8 in the workpiece 1A is performed, so Use a condenser lens without spherical aberration. That is, the second example of the laser processing step is performed using a laser processing apparatus (not shown) of an optical system different from the above-described laser processing apparatus 10 . The second example of the laser processing step is carried out under the following processing conditions 2, for example.

[加工條件2]   被加工物1的材質 :石英玻璃   被加工物1的厚度 :500μm   波長 :1064nm的脈衝雷射   平均輸出 :0.2W   重複頻率 :80kHz   加工進給速度 :200mm/s[Processing condition 2] Material of workpiece 1: Quartz glass Thickness of workpiece 1: 500μm Wavelength: 1064nm pulsed laser Average output: 0.2W Repetition frequency: 80kHz Processing feed rate: 200mm/s

雖未圖示,使聚光器以接近被加工物1A的方向下降,且將雷射束的聚光點的位置定位在接近被加工物1A的被保持面1b側的預定深度。一邊將保持平台以預定的加工進給速度(200mm/s)以X軸方向進行加工進給,一邊沿著分割預定線2,由被加工物1的上面1a側照射對被加工物1A具透過性的波長(1064nm)的雷射束,如圖6所示,在被加工物1A的內部,沿著分割預定線2的伸張方向形成強度降低的改質層8。由改質層8的端部,以被加工物1A的厚度方向產生裂痕9。其中,若以裂痕9至被加工物1A的被保持面1b的方式調整雷射束的輸出即可。Although not shown, the condenser is lowered in a direction close to the workpiece 1A, and the position of the condensing point of the laser beam is positioned at a predetermined depth close to the held surface 1b of the workpiece 1A. While the holding table is processed and fed in the X-axis direction at a predetermined processing feed speed (200 mm/s), along the planned dividing line 2, the workpiece 1 is irradiated from the upper surface 1a side of the workpiece 1 through the workpiece 1A. A laser beam having a specific wavelength (1064 nm), as shown in FIG. 6 , forms a modified layer 8 with reduced strength in the interior of the workpiece 1A along the extending direction of the dividing line 2 . Cracks 9 are generated in the thickness direction of the workpiece 1A from the end of the modified layer 8 . However, the output of the laser beam may be adjusted so that the crack 9 reaches the held surface 1b of the workpiece 1A.

形成在被加工物1A的內部的改質層8的數量並未特別限定,可為1層,亦可為2層以上。因此,若在被加工物1A的內部形成複數改質層8,使聚光器上升,將雷射束的聚光點的位置,由被加工物1A的被保持面1b側朝向上面1a側隔著均等間隔,在更為上面1a側定位雷射束的聚光點來照射雷射束,藉此在被加工物1A的內部形成2層以上的改質層8。此外,亦可將保持平台進行複數次加工進給,形成複數層的改質層8,亦可將雷射束分歧而在將聚光點的位置定位在複數部位的狀態下,將保持平台進行加工進給而形成複數層的改質層8。在被加工物1A的內部,一沿著全部分割預定線2的伸張方向形成改質層8,雷射加工步驟的第2例即完成。The number of the modified layers 8 formed in the workpiece 1A is not particularly limited, and may be one layer or two or more layers. Therefore, when the plurality of modified layers 8 are formed inside the workpiece 1A, the condenser is raised, and the position of the condensing point of the laser beam is separated from the held surface 1b side of the workpiece 1A toward the upper surface 1a side. Two or more modified layers 8 are formed inside the workpiece 1A by positioning the condensing point of the laser beam on the upper surface 1a side at an even interval and irradiating the laser beam. In addition, the holding table may be processed and fed a plurality of times to form a plurality of layers of the modified layer 8, and the laser beam may be divided and the position of the condensing point may be positioned at a plurality of positions, the holding table may be The processing feed is performed to form the modified layer 8 of a plurality of layers. The second example of the laser processing step is completed when the modified layer 8 is formed along the extending direction of all the planned dividing lines 2 inside the workpiece 1A.

圖7所示之切削裝置20係用以實施後述之分割步驟的切削裝置之一例。切削裝置20係具有裝置基座200,在裝置基座200之上係具備有:具有吸引保持被加工物1的吸引保持面21a且可旋轉的保持平台21;將保持平台21以X軸方向進行加工進給的加工進給手段23;對被加工物1施行切削加工的切削手段25;及將切削手段25以Y軸方向進行分級進給的分級進給手段24。在保持平台21的周緣係配設有保持框架3的框架保持手段22。The cutting apparatus 20 shown in FIG. 7 is an example of a cutting apparatus for carrying out the dividing step to be described later. The cutting device 20 has a device base 200, and on the device base 200 is a rotatable holding table 21 having a suction and holding surface 21a for sucking and holding the workpiece 1; the holding table 21 is moved in the X-axis direction The machining feed means 23 for machining feed; the cutting means 25 for cutting the workpiece 1 ; and the step feed means 24 for the step feed of the cutting means 25 in the Y-axis direction. A frame holding means 22 for holding the frame 3 is arranged on the periphery of the holding platform 21 .

加工進給手段23係具備有:以X軸方向延伸的滾珠螺桿230;連接於滾珠螺桿230的一端的馬達231;與滾珠螺桿230呈平行延伸的一對導軌232;及可以X軸方向移動的X軸基座233。在X軸基座233的其中一面係旋轉自如地支持有保持平台21,在X軸基座233的另一面係滑接一對導軌232,在形成在X軸基座233的中央部的螺帽螺合有滾珠螺桿230。藉由馬達231被驅動的滾珠螺桿230進行旋動,藉此X軸基座233可沿著導軌232以X軸方向移動,且將保持平台21以X軸方向進行加工進給。The machining feeding means 23 includes: a ball screw 230 extending in the X-axis direction; a motor 231 connected to one end of the ball screw 230; a pair of guide rails 232 extending parallel to the ball screw 230; X-axis base 233 . The holding table 21 is rotatably supported on one surface of the X-axis base 233 , a pair of guide rails 232 are slidably connected to the other surface of the X-axis base 233 , and a nut formed in the center of the X-axis base 233 A ball screw 230 is screwed. The ball screw 230 driven by the motor 231 rotates, whereby the X-axis base 233 can move along the guide rail 232 in the X-axis direction, and the holding platform 21 is processed and fed in the X-axis direction.

分級進給手段24係具備有:以Y軸方向延伸的滾珠螺桿240;連接於滾珠螺桿240的一端的馬達241;與滾珠螺桿240呈平行延伸的一對導軌242;及剖面大致L字形狀的可動基台243。在可動基台243的上部係透過升降手段29而支持有切削手段25。另一方面,在可動基台243的下部係滑接一對導軌242,在形成在可動基台243的中央部的螺帽螺合有滾珠螺桿240。藉由馬達241被驅動的滾珠螺桿240進行旋動,藉此可動基台243可沿著導軌242以Y軸方向移動,且將切削手段25以Y軸方向進行分級進給。The stepwise feeding means 24 includes: a ball screw 240 extending in the Y-axis direction; a motor 241 connected to one end of the ball screw 240; a pair of guide rails 242 extending parallel to the ball screw 240; The movable base 243 . The cutting means 25 is supported on the upper part of the movable base 243 through the raising and lowering means 29 . On the other hand, a pair of guide rails 242 are slidably connected to the lower part of the movable base 243 , and a ball screw 240 is screwed to a nut formed in the center of the movable base 243 . The ball screw 240 driven by the motor 241 rotates, whereby the movable base 243 can be moved in the Y-axis direction along the guide rail 242, and the cutting means 25 can be stepped in the Y-axis direction.

升降手段29係至少具備以Z軸方向延伸的未圖示之滾珠螺桿;及連接於滾珠螺桿的一端的馬達290,藉由馬達290進行驅動,滾珠螺桿進行旋動,可使切削手段25以Z軸方向作升降。在保持平台21的加工進給的路徑上,係配設有檢測應分割被加工物1的區域(分割預定線2)的攝像手段30。攝像手段30係例如內置CCD畫像感測器的攝影機,可將被保持在保持平台21的被加工物1由上方進行攝像,且進行圖案匹配等畫像處理,藉此檢測分割預定線2。The elevating means 29 is provided with at least a ball screw extending in the Z-axis direction, not shown; and a motor 290 connected to one end of the ball screw. The motor 290 is driven and the ball screw rotates, so that the cutting means 25 can be moved in the Z direction. The axis direction is raised and lowered. The imaging means 30 which detects the area|region (division plan line 2) which should be divided|segmented the to-be-processed object 1 is arrange|positioned on the path of the processing feed of the holding table 21. FIG. The imaging means 30 is, for example, a camera with a built-in CCD image sensor, and can detect the planned dividing line 2 by taking an image of the workpiece 1 held on the holding table 21 from above and performing image processing such as pattern matching.

切削手段25係至少具備有:具有Y軸方向的軸心的心軸250;可旋轉地支持心軸250的心軸外殼251;及具備有被裝設在心軸250的前端的環狀切刃的切削刀26。切削手段25係形成為藉由心軸250進行旋轉,使切削刀26以預定速度旋轉的構成。The cutting means 25 includes at least a mandrel 250 having a shaft center in the Y-axis direction, a mandrel housing 251 that rotatably supports the mandrel 250 , and a mandrel 250 provided with an annular cutting edge attached to the front end of the mandrel 250 . Cutter 26 . The cutting means 25 is configured to rotate by the spindle 250 to rotate the cutting blade 26 at a predetermined speed.

切削刀26的切刃係以樹脂或金屬等接合材結合鑽石或立方晶氮化硼等砥粒而形成,如圖8所示,其前端部分具有尖成銳角的刀尖260,前端部分的剖面形狀形成為例如V形狀。切削刀26的前端角度261係以設定為30°~60°的範圍為佳。如上所示,藉由前端部分形成為V形狀的切削刀26,形成有細孔5的被加工物1的分割性變高。亦即,使切削刀26的刀尖260沿著分割預定線2切入時,即使被加工物1的厚度方向的切入深度淺,細孔5的開口6側亦壓寬,可以厚度方向效率佳地分割被加工物1。The cutting edge of the cutting blade 26 is formed by combining a bonding material such as resin or metal with diamond or cubic boron nitride, etc., as shown in FIG. The shape is formed, for example, in a V shape. The tip angle 261 of the cutting blade 26 is preferably set in the range of 30° to 60°. As described above, with the cutting blade 26 having the tip portion formed in the V-shape, the divisibility of the workpiece 1 in which the fine hole 5 is formed becomes high. That is, when the cutting edge 260 of the cutting blade 26 is cut along the planned dividing line 2, even if the cutting depth in the thickness direction of the workpiece 1 is shallow, the opening 6 side of the fine hole 5 is widened, and the thickness direction can be efficiently cut. Divide the workpiece 1.

(分割步驟的第1例)   實施雷射加工步驟之後,在切削裝置20中,藉由切削刀26,沿著分割預定線2切削被加工物1的厚度方向的一部分,藉此分割被加工物1。分割步驟的第1例係例如一邊透過圖9所示之支持治具40,以保持平台21保持被加工物1,一邊實施。在本實施形態中,係說明將在雷射加工步驟的第1例中進行雷射加工的被加工物1進行分割的情形。(First example of the dividing step) After the laser processing step is performed, the cutting device 20 cuts a part of the workpiece 1 in the thickness direction along the line 2 to be divided by the cutting blade 26, thereby dividing the workpiece. 1. The first example of the dividing step is performed, for example, while holding the workpiece 1 with the holding table 21 through the support jig 40 shown in FIG. 9 . In this embodiment, the case where the to-be-processed object 1 which is laser-processed in the 1st example of a laser processing step is divided|segmented is demonstrated.

支持治具40係形成為矩形板狀,具備有:沿著分割預定線2的伸長方向伸長,俾以支持被加工物1的分割預定線2的兩側的支持部41;及形成在對應分割預定線2的位置的溝槽42。分割預定線2的兩側係指被加工物1之中未形成有分割預定線2的部分,夾著分割預定線2的一對外側1c。The support jig 40 is formed in a rectangular plate shape, and includes: support parts 41 extending along the extension direction of the planned dividing line 2 to support the workpiece 1 on both sides of the planned dividing line 2; The groove 42 for the location of the predetermined line 2 . Both sides of the planned dividing line 2 refer to a portion of the workpiece 1 where the planned dividing line 2 is not formed, and a pair of outer sides 1c of the planned dividing line 2 are sandwiched therebetween.

溝槽42係未支持分割預定線2的正下方的間隙,在圖示之例中,僅以一方向伸張而形成。支持治具40係藉由例如橡膠、胺基甲酸酯等柔軟構件所構成,在被加工物1分割時,支持治具40容易相對吸引保持面21a而沈入,可使對被加工物1的衝撞緩和。在如上所示所構成的支持治具40中,係以支持部41支持被加工物1的分割預定線2的兩側(一對外側1c),並且被定位在2個支持部41間的溝槽42的分割預定線2的正下方並無須支持,即可使被加工物1保持在保持平台21。The grooves 42 do not support the gap directly below the planned dividing line 2, and are formed to extend only in one direction in the example shown in the figure. The support jig 40 is made of a soft member such as rubber, urethane, etc., when the workpiece 1 is divided, the support jig 40 is easy to sink relative to the suction and holding surface 21a, and the workpiece 1 can be easily sunk. collision mitigation. In the support jig 40 configured as described above, the support parts 41 support both sides (a pair of outer sides 1 c ) of the planned dividing line 2 of the workpiece 1 and are positioned in the groove between the two support parts 41 The workpiece 1 can be held on the holding platform 21 directly below the planned dividing line 2 of the groove 42 without support.

此外,較佳為支持治具40係具有與被加工物1為同等以上的尺寸,而且,具有小於保持平台21的吸引保持面21a的尺寸。本實施形態所示之支持治具40係形成為與被加工物1為大致同等的尺寸,可在分割時,以被加工物1不會破損的方式進行支持。其中,支持治具40的尺寸或形狀係若按照所欲分割的被加工物1的尺寸或形狀來適當變更即可。In addition, it is preferable that the support jig 40 has a size equal to or greater than that of the workpiece 1 , and has a size smaller than the suction holding surface 21 a of the holding table 21 . The support jig 40 shown in this embodiment is formed to be approximately the same size as the workpiece 1, and can support the workpiece 1 without being damaged during division. Here, the size and shape of the support jig 40 may be appropriately changed according to the size or shape of the workpiece 1 to be divided.

當吸引保持在保持平台21透過帶件4而與框架3形成為一體的被加工物1時,將支持治具40載置於保持平台21的吸引保持面21a之後,由被貼著在被加工物1的被保持面1b的帶件4側,載置於支持治具40之上。此時,將分割預定線2的外側1c定位在支持部41,並且將溝槽42定位在分割預定線2的正下方。When the workpiece 1 integrated with the frame 3 through the tape 4 is sucked and held on the holding table 21, the support jig 40 is placed on the suction and holding surface 21a of the holding table 21, and then the workpiece 1 is attached to the workpiece The object 1 is placed on the support jig 40 on the side of the tape 4 on the surface 1b to be held. At this time, the outer side 1 c of the planned dividing line 2 is positioned on the support portion 41 , and the groove 42 is positioned just below the planned dividing line 2 .

接著,在被貼著在被載置於支持治具40之上的被加工物1的帶件4覆蓋吸引保持面21a的狀態下,以保持平台21吸引保持被加工物1。具體而言,若未圖示之吸引源的吸引力透過吸引保持面21a而作用於支持治具40時,如圖10所示,位於支持部41間的溝槽42的正上方的帶件4藉由吸引力而由被加工物1的被保持面1b被剝下,形成為仿照溝槽42的形狀來進行黏貼的狀態。亦即,位於溝槽42的正上方的細孔5的開口6露出而被加工物1形成為未受到任何支持的狀態。帶件4亦可被貼著在被保持面1b,但是當以切削刀26切削被加工物1時,以溝槽42的正上方的部分未受到任何支持的狀態,被加工物1的分割性更加提升。夾著溝槽42的2個支持部41間的距離H係以設定為藉由分割被加工物1而形成的晶片尺寸的1/5~1/6左右為佳。Next, the workpiece 1 is sucked and held by the holding platform 21 in a state where the tape 4 attached to the workpiece 1 placed on the support jig 40 covers the suction and holding surface 21 a. Specifically, if the suction force of the suction source (not shown) acts on the support jig 40 through the suction and holding surface 21a, as shown in FIG. It is peeled off from the held surface 1 b of the workpiece 1 by the suction force, and is in a state of being stuck following the shape of the groove 42 . That is, the opening 6 of the fine hole 5 located directly above the groove 42 is exposed, and the workpiece 1 is formed in a state in which it is not supported at all. The belt 4 can also be attached to the surface 1b to be held, but when the workpiece 1 is cut with the cutting blade 26, the portion directly above the groove 42 is not supported at all, and the splitability of the workpiece 1 even more. The distance H between the two support portions 41 sandwiching the groove 42 is preferably set to about 1/5 to 1/6 of the wafer size formed by dividing the workpiece 1 .

藉由圖7所示之攝像手段30來檢測分割預定線2,進行分割預定線2與切削刀26的對位。接著,一邊以加工進給手段23將保持平台21以預定的加工進給速度以X軸方向進行加工進給,一邊使切削刀26旋轉,同時藉由升降手段29,使切削刀26由被加工物1的上面1a切入預定的切入深度L,切削被加工物1的厚度方向的一部分。若切削刀26之圖8所示之前端角度261被設定為例如60°,切入深度L係以被設定為被加工物1的厚度的1/5左右(100μm左右)為合適。藉由如上所示切削被加工物1的厚度方向的一部分,細孔5之擴徑的開口6側壓寬而位於溝槽42的上方的部分朝下方按壓,變得無法承受外力的被加工物1即被分割。其中,切削刀26的前端角度261愈成為銳角,被加工物1的分割性愈為提升,但是切削刀26的磨損量愈大,因此若按照被加工物1的材質來適當調整前端角度261或切入深度L即可。The line to be divided 2 is detected by the imaging means 30 shown in FIG. 7 , and the alignment of the line to be divided 2 and the cutting blade 26 is performed. Next, the cutting blade 26 is rotated while the holding table 21 is processed and fed in the X-axis direction at a predetermined processing feed speed by the processing feeding means 23 , and the cutting blade 26 is moved from the workpiece by the lifting and lowering means 29 at the same time. The upper surface 1a of the object 1 is cut by a predetermined cutting depth L, and a part of the workpiece 1 in the thickness direction is cut. When the tip angle 261 of the cutting blade 26 shown in FIG. 8 is set to, for example, 60°, the cutting depth L is preferably set to about 1/5 (about 100 μm) of the thickness of the workpiece 1 . By cutting a part of the workpiece 1 in the thickness direction as described above, the opening 6 side of the enlarged diameter of the fine hole 5 is widened, and the portion located above the groove 42 is pressed downward, and the workpiece cannot withstand external force. 1 is divided. Among them, the sharper the front end angle 261 of the cutting blade 26 is, the more the splitability of the workpiece 1 is improved, but the wear amount of the cutting blade 26 is larger, so if the front end angle 261 is adjusted according to the material of the workpiece 1, or The cut-in depth L is sufficient.

一沿著以被加工物1的一方向伸張的分割預定線2以切削刀26切削,一度將被加工物1由支持治具40卸下而使其旋轉90°,將溝槽42定位在未切削的分割預定線2的正下方之後,將被加工物1重新載置於支持治具40之上。之後,與上述同樣地,一邊在被貼著在被載置於支持治具40之上的被加工物1的帶件4覆蓋吸引保持面21a的狀態下,以保持平台21吸引保持被加工物1,一邊沿著分割預定線2進行上述同樣的切削,將被加工物1分割成各個晶片。支持治具40的溝槽42亦可對應格子狀的分割預定線2而形成為格子狀。此時,若在沿著以被加工物1的一方向伸張的分割預定線2進行切削之後,使保持平台21旋轉90°,藉此改變未切削的分割預定線2的方向,沿著分割預定線2進行上述同樣的切削即可。After cutting with the cutting blade 26 along the planned dividing line 2 extending in one direction of the workpiece 1, the workpiece 1 is once removed from the support jig 40 and rotated by 90°, and the groove 42 is positioned in the The workpiece 1 is placed on the support jig 40 again after the cut just below the planned dividing line 2 . Thereafter, in the same manner as above, the workpiece is sucked and held by the holding platform 21 while the tape 4 attached to the workpiece 1 placed on the support jig 40 covers the suction and holding surface 21a. 1. Divide the workpiece 1 into individual wafers while performing the same cutting as described above along the line to be divided 2 . The grooves 42 of the support jig 40 may also be formed in a lattice shape corresponding to the lattice-shaped planned dividing lines 2 . At this time, after cutting along the planned dividing line 2 extending in one direction of the workpiece 1, the holding table 21 is rotated by 90°, thereby changing the direction of the uncut planned dividing line 2, along the dividing plan. The wire 2 may be cut in the same manner as described above.

本實施形態所示之切削刀26係前端部分的剖面形狀為V形狀,但是並非為限定於該形狀者。例如,亦可如圖11(a)所示,使用在其中一面具有傾斜的錐狀外周面270,且前端部分的剖面形狀形成為V字之單側形狀的切削刀27,實施分割步驟。此外,亦可如圖11(b)所示,使用具有前端部分的形狀呈平坦的刀尖280的切削刀28來實施分割步驟。使用該切削刀28來實施分割步驟時的切入深度係以設定為被加工物1的厚度的1/2左右(250μm左右)為佳。The cross-sectional shape of the tip portion of the cutting blade 26 shown in this embodiment is a V shape, but it is not limited to this shape. For example, as shown in FIG. 11( a ), the dividing step may be performed using a cutting blade 27 having an inclined tapered outer peripheral surface 270 on one surface and a V-shaped cross-sectional shape of the tip portion. Further, as shown in FIG. 11( b ), the dividing step may be performed using the cutting blade 28 having a flat cutting edge 280 in the shape of the distal end portion. It is preferable to set the depth of cut when the dividing step is performed using the cutting blade 28 to about 1/2 (about 250 μm) of the thickness of the workpiece 1 .

(分割步驟的第2例)   在分割步驟中,亦可使用例如圖12所示之治具平台50來實施。治具平台50係包含支持被加工物1的支持面51,形成對應分割預定線2的溝槽52,並且在以溝槽52予以區劃的各區域形成有吸引被加工物1的吸引孔53。治具平台50係被固定在圖13所示之治具基座54之上。在治具基座54的內部係形成有連通吸引孔53的吸引路55。在吸引路55係透過閥56而連接於吸引源57。藉由打開閥56,可通過吸引孔53而使吸引力作用於支持面51。此外,在治具基座54係形成有用以吸引保持治具平台50的吸引孔58。吸引孔58係透過閥56a而連接於吸引源57a。藉由打開閥56a,可通過吸引孔58而使吸引力作用於治具基座54的上面而吸引保持治具平台50。如上所示,與治具基座54形成為一體所構成的治具平台50係作為直接吸引保持被加工物1的保持平台來發揮功能。(Second example of the dividing step) In the dividing step, for example, the jig stage 50 shown in FIG. 12 may be used for implementation. The jig stage 50 includes a support surface 51 for supporting the workpiece 1 , grooves 52 corresponding to the planned dividing lines 2 are formed, and suction holes 53 for sucking the workpiece 1 are formed in each region defined by the grooves 52 . The jig platform 50 is fixed on the jig base 54 shown in FIG. 13 . Inside the jig base 54, a suction passage 55 that communicates with the suction hole 53 is formed. The suction path 55 is connected to the suction source 57 through the valve 56 . By opening the valve 56 , an attractive force can be applied to the support surface 51 through the suction hole 53 . In addition, the jig base 54 is formed with a suction hole 58 for sucking and holding the jig stage 50 . The suction hole 58 is connected to the suction source 57a through the valve 56a. By opening the valve 56a, the jig table 50 can be sucked and held by the suction hole 58 acting on the upper surface of the jig base 54 with an attractive force. As described above, the jig stage 50 formed integrally with the jig base 54 functions as a holding stage for directly sucking and holding the workpiece 1 .

若使用治具平台50來實施分割步驟,如圖14所示,將沿著分割預定線2形成有細孔5的被加工物1,由被保持面1b側載置於治具平台50。此時,將細孔5的開口6定位在治具平台50的溝槽52的上方側。接著,打開閥56,通過吸引路55而使吸引孔53與吸引源57相連通,且使吸引力作用於治具平台50的支持面51。藉此,以治具平台50直接吸引保持被加工物1。在分割步驟的第2例中,係可以治具平台50直接吸引保持被加工物1,因此亦可不使用上述帶件4。When the dividing step is performed using the jig stage 50 , as shown in FIG. 14 , the workpiece 1 having the fine holes 5 formed along the line to be divided 2 is placed on the jig stage 50 from the held surface 1 b side. At this time, the opening 6 of the fine hole 5 is positioned above the groove 52 of the jig stage 50 . Next, the valve 56 is opened, the suction hole 53 is communicated with the suction source 57 through the suction passage 55 , and the suction force acts on the support surface 51 of the jig stage 50 . Thereby, the workpiece 1 is directly sucked and held by the jig stage 50 . In the second example of the dividing step, since the workpiece 1 can be directly sucked and held by the jig table 50, the above-mentioned tape 4 may not be used.

與分割步驟的第1例同樣地,一邊使切削刀26以例如箭號A方向旋轉,一邊使切削刀26由被加工物1的上面1a以預定切入深度切入,切削被加工物1的厚度方向的一部分。細孔5之擴徑的開口6側壓寬,位於溝槽52的上方的部分朝下方被按壓,變得無法承受外力的被加工物1即被分割。接著,沿著全部分割預定線2,進行上述同樣的切削,將被加工物1分割成各個晶片。Similar to the first example of the dividing step, while rotating the cutting blade 26 in the direction of arrow A, for example, the cutting blade 26 is cut from the upper surface 1a of the workpiece 1 at a predetermined cutting depth to cut the workpiece 1 in the thickness direction. a part of. The opening 6 side of the enlarged diameter of the fine hole 5 is widened, and the portion located above the groove 52 is pressed downward, and the workpiece 1 that cannot withstand the external force is divided. Next, the same cutting as described above is performed along all the planned dividing lines 2 to divide the workpiece 1 into individual wafers.

如上所示,在本發明之加工方法中,由於具備有藉由切削被加工物1的厚度方向的一部分來進行分割的分割步驟,因此與使用制動裝置等的習知的加工方法相比,可減小對被加工物1的衝撞,可將被加工物1良好地分割成各個晶片。此外,在分割步驟中,由於僅以切削刀26切削被加工物1的厚度方向的一部分即可,因此與以切削刀26將被加工物1以厚度方向完全切斷的情形相比,可加快加工進給速度,晶片的生產性會提升。   在分割步驟的第1例中,在具有吸引保持面21a的保持平台21上,透過具有與被加工物1為同等以上的尺寸而且具有小於吸引保持面21a的尺寸的支持治具40而以保持平台21吸引保持被加工物1,因此可減小分割時對被加工物1的衝撞,且可將被加工物1良好地分割成各個晶片。   此外,在分割步驟的第2例中,係形成為以治具平台50直接吸引保持未貼著有帶件4的被加工物1的構成,因此可減小分割時對被加工物1的衝撞,可將被加工物1良好地分割成各個晶片。As described above, in the machining method of the present invention, since the dividing step for dividing by cutting a part of the workpiece 1 in the thickness direction is provided, compared with the conventional machining method using a braking device or the like, it is possible to The impact on the workpiece 1 is reduced, and the workpiece 1 can be favorably divided into individual wafers. In addition, in the dividing step, since only a part of the workpiece 1 in the thickness direction is cut with the cutting blade 26, the cutting blade 26 can cut the workpiece 1 completely in the thickness direction. With the processing feed rate, the productivity of the wafer will be improved. In the first example of the dividing step, the holding table 21 having the suction and holding surface 21a is held by a support jig 40 having a size equal to or greater than that of the workpiece 1 but smaller than the suction and holding surface 21a. The stage 21 attracts and holds the workpiece 1, so that the impact on the workpiece 1 at the time of division can be reduced, and the workpiece 1 can be favorably divided into individual wafers. In addition, in the second example of the dividing step, the jig platform 50 is configured to directly suck and hold the workpiece 1 without the tape 4 attached thereto, so that the impact on the workpiece 1 at the time of dividing can be reduced. , the workpiece 1 can be favorably divided into individual wafers.

1、1A‧‧‧被加工物1a‧‧‧上面1b‧‧‧被保持面1c‧‧‧外側2‧‧‧分割預定線3‧‧‧框架4‧‧‧帶件5‧‧‧細孔6‧‧‧開口7‧‧‧變質區域8‧‧‧改質層9‧‧‧裂痕10‧‧‧雷射加工裝置100‧‧‧裝置基座101‧‧‧側壁11‧‧‧保持平台11a‧‧‧保持面12‧‧‧框架保持手段120‧‧‧框架載置台121‧‧‧夾具部13‧‧‧加工進給手段130‧‧‧滾珠螺桿131‧‧‧馬達132‧‧‧導軌133‧‧‧X軸基座14‧‧‧分級進給手段140‧‧‧滾珠螺桿141‧‧‧馬達142‧‧‧導軌143‧‧‧Y軸基座15‧‧‧雷射束照射手段150‧‧‧殼體151‧‧‧聚光器152‧‧‧聚光透鏡16‧‧‧攝像手段17‧‧‧升降手段170‧‧‧滾珠螺桿171‧‧‧馬達172‧‧‧導軌173‧‧‧升降板20‧‧‧切削裝置200‧‧‧裝置基座21‧‧‧保持平台21a‧‧‧保持面22‧‧‧框架保持手段23‧‧‧加工進給手段230‧‧‧滾珠螺桿231‧‧‧馬達232‧‧‧導軌233‧‧‧X軸基座24‧‧‧分級進給手段240‧‧‧滾珠螺桿241‧‧‧馬達242‧‧‧導軌243‧‧‧可動基台25‧‧‧切削手段250‧‧‧心軸251‧‧‧外殼26、27、28‧‧‧切削刀260、280‧‧‧刀尖261‧‧‧前端角度270‧‧‧外周面29‧‧‧升降手段290‧‧‧馬達30‧‧‧攝像手段40‧‧‧支持治具41‧‧‧支持部42‧‧‧溝槽50‧‧‧治具平台51‧‧‧支持部52‧‧‧溝槽53‧‧‧吸引孔54‧‧‧治具基座55‧‧‧吸引路56、56a‧‧‧閥57、57a‧‧‧吸引源58‧‧‧吸引孔H‧‧‧距離L‧‧‧切入深度LB‧‧‧雷射束O‧‧‧光軸P‧‧‧聚光點1. 1A‧‧‧Workpiece 1a‧‧‧Top surface 1b‧‧‧Retained surface 1c‧‧‧Outside 2‧‧‧Partitioning line 3‧‧‧Frame 4‧‧‧Tape 5‧‧‧Slim hole 6‧‧‧Opening 7‧‧‧Modified area 8‧‧‧Modified layer 9‧‧‧Crack 10‧‧‧Laser processing device 100‧‧‧Device base 101‧‧‧Sidewall 11‧‧‧Holding platform 11a ‧‧‧Holding surface 12‧‧‧Frame holding means 120‧‧‧Frame mounting table 121‧‧‧Clamp part 13‧‧‧Processing feeding means 130‧‧‧Ball screw 131‧‧‧Motor 132‧‧‧Guide rail 133 ‧‧‧X axis base 14‧‧‧Grading feed means 140‧‧‧Ball screw 141‧‧‧Motor 142‧‧‧Guide rail 143‧‧‧Y axis base 15‧‧‧Laser beam irradiation means 150‧ ‧‧Housing 151‧‧‧Condenser 152‧‧‧Condenser lens 16‧‧‧Camera means 17‧‧‧Lifting means 170‧‧‧Ball screw 171‧‧‧Motor 172‧‧‧Guide rail 173‧‧‧ Lifting Plate 20‧‧‧Cutting Device 200‧‧‧Device Base 21‧‧‧Holding Platform 21a‧‧‧Holding Surface 22‧‧‧Frame Holding Means 23‧‧‧Machining Feeding Means 230‧‧‧Ball Screws 231‧ ‧‧Motor 232‧‧‧Guide rail 233‧‧‧X-axis base 24‧‧‧Grading feed method 240‧‧‧Ball screw 241‧‧‧Motor 242‧‧‧Guide rail 243‧‧‧Moveable base 25‧‧ ‧Cutting means 250‧‧‧Spindle 251‧‧‧Shell 26, 27, 28‧‧‧Cutting tools 260, 280‧‧‧Tool tip 261‧‧‧Front end angle 270‧‧‧Outer peripheral surface 29‧‧‧Lifting means 290‧‧‧Motor 30‧‧‧Camera means 40‧‧‧Supporting fixture 41‧‧‧Supporting part 42‧‧‧Groove 50‧‧‧Judge platform 51‧‧‧Supporting part 52‧‧‧Groove 53 ‧‧‧Suction hole 54‧‧‧Judge base 55‧‧‧Suction path 56, 56a‧‧‧Valve 57, 57a‧‧‧Suction source 58‧‧‧Suction hole H‧‧‧distance L‧‧‧cut Depth LB‧‧‧laser beam O‧‧‧optical axis P‧‧‧focusing point

圖1係顯示被加工物之一例的斜視圖。   圖2係顯示雷射加工裝置之一例的構成的斜視圖。   圖3係顯示雷射加工步驟的剖面圖。   圖4係實施雷射加工步驟的第1例之後的被加工物的部分放大剖面圖。   圖5係說明聚光透鏡的開口數、與被加工物的折射率、與將開口數除以折射率後的值的關係性的說明圖。   圖6係實施雷射加工步驟的第2例之後的被加工物的部分放大剖面圖。   圖7係顯示切削裝置之一例的構成的斜視圖。   圖8係顯示切削刀的構成的部分放大剖面圖。   圖9係顯示分割步驟的第1例之中,在保持平台透過支持治具來載置被加工物的狀態的斜視圖。   圖10係顯示分割步驟的第1例的部分放大剖面圖。   圖11(a)係顯示切削刀的第2例的放大剖面圖。(b)係顯示切削刀的第3例的放大剖面圖。   圖12係顯示治具平台的構成的斜視圖。   圖13係顯示固定在治具基座的狀態的治具平台的構成的剖面圖。   圖14係顯示分割步驟的第2例的剖面圖。FIG. 1 is a perspective view showing an example of a workpiece. Fig. 2 is a perspective view showing the configuration of an example of a laser processing apparatus. Figure 3 is a sectional view showing the steps of laser processing. Fig. 4 is a partial enlarged cross-sectional view of the workpiece after the first example of the laser processing step is carried out. Fig. 5 is an explanatory diagram illustrating the relationship between the number of apertures of the condenser lens, the refractive index of the workpiece, and the value obtained by dividing the number of apertures by the refractive index. Fig. 6 is a partial enlarged cross-sectional view of the workpiece after the second example of the laser processing step is carried out. Fig. 7 is a perspective view showing the configuration of an example of a cutting device. Fig. 8 is a partially enlarged cross-sectional view showing the structure of the cutting blade. Fig. 9 is a perspective view showing the state in which the workpiece is placed on the holding platform through the support jig in the first example of the dividing step. Fig. 10 is a partially enlarged cross-sectional view showing the first example of the dividing step. Fig. 11(a) is an enlarged cross-sectional view showing the second example of the cutting blade. (b) is an enlarged cross-sectional view showing the third example of the cutting blade. Fig. 12 is a perspective view showing the structure of the jig platform. Fig. 13 is a cross-sectional view showing the structure of the jig table fixed to the jig base. Fig. 14 is a sectional view showing a second example of the dividing step.

1‧‧‧被加工物 1‧‧‧Processing

1a‧‧‧上面 1a‧‧‧above

1b‧‧‧被保持面 1b‧‧‧Retained surface

4‧‧‧帶件 4‧‧‧Tape

5‧‧‧細孔 5‧‧‧pore

6‧‧‧開口 6‧‧‧Opening

7‧‧‧變質區域 7‧‧‧Deterioration area

26‧‧‧切削刀 26‧‧‧Cutting knives

40‧‧‧支持治具 40‧‧‧Support fixture

41‧‧‧支持部 41‧‧‧Support Department

42‧‧‧溝槽 42‧‧‧Groove

260‧‧‧刀尖 260‧‧‧ tip

H‧‧‧距離 H‧‧‧distance

L‧‧‧切入深度 L‧‧‧cut depth

Claims (2)

一種加工方法,其係設定有分割預定線之被加工物之加工方法,該加工方法具備有:雷射加工步驟,其係在被加工物的被保持面貼著帶件,透過該帶件而在雷射加工裝置的保持平台保持被加工物,沿著該分割預定線照射對被加工物具透過性的波長的雷射束,對被加工物施行雷射加工;及分割步驟,其係在實施該雷射加工步驟之後,在切削裝置的保持平台的吸引保持面保持被加工物的被保持面,以切削刀沿著該分割預定線切削被加工物的厚度方向的一部分,藉此沿著該分割預定線分割被加工物,在被加工物的該被保持面係貼著有具有大於該切削裝置的該保持平台的該吸引保持面的尺寸的帶件,在該分割步驟中,係在該吸引保持面,具備沿著該分割預定線的伸長方向伸長至該分割預定線的兩側的支持部,載置具有與被加工物為同等以上的尺寸而且具有小於該吸引保持面的尺寸的支持治具,透過該支持治具將被加工物載置於該吸引保持面,該分割預定線的正下方係形成為不作支持的狀態,在被貼著在透過該支持治具所載置的被加工物的該帶件覆蓋該吸引保持面的狀態下在該保持平台吸引保持被加工物,藉此將該支持部間的該帶件由被加工物的該被保持面剝下而將被加工物分割。 A processing method of a workpiece having a predetermined dividing line set, the processing method comprising: a laser processing step of attaching a tape to a held surface of the workpiece, and passing through the tape The object to be processed is held on a holding platform of the laser processing apparatus, a laser beam having a wavelength that is transparent to the object to be processed is irradiated along the predetermined line for dividing, and laser processing is performed on the object to be processed; and a dividing step is performed in After the laser processing step is carried out, the held surface of the workpiece is held on the suction and holding surface of the holding platform of the cutting device, and a part of the thickness direction of the workpiece is cut with the cutting blade along the planned dividing line. The planned dividing line divides the workpiece, and a tape having a size larger than the suction and holding surface of the holding platform of the cutting device is attached to the held surface of the workpiece, and in the dividing step, a tape is attached to the holding surface. The suction and holding surface is provided with support portions extending to both sides of the planned dividing line along the extending direction of the planned dividing line, and has a size equal to or greater than the workpiece to be processed and smaller than the dimension of the suction and holding surface. A support jig is used to place the workpiece on the suction and holding surface through the support jig, and the part directly below the planned dividing line is formed in an unsupported state. The workpiece is sucked and held on the holding platform in a state where the tape of the workpiece covers the suction and holding surface, whereby the tape between the support parts is peeled off from the held surface of the workpiece to be held by the workpiece. Processed product segmentation. 如申請專利範圍第1項之加工方法,其中,前述切削刀的前端的剖面形狀係V形狀。The processing method according to claim 1, wherein the cross-sectional shape of the tip of the cutting blade is a V-shape.
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