CN102152413A - Wafer processing method - Google Patents
Wafer processing method Download PDFInfo
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- CN102152413A CN102152413A CN2011100035026A CN201110003502A CN102152413A CN 102152413 A CN102152413 A CN 102152413A CN 2011100035026 A CN2011100035026 A CN 2011100035026A CN 201110003502 A CN201110003502 A CN 201110003502A CN 102152413 A CN102152413 A CN 102152413A
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- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
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Abstract
The invention provides a wafer processing method through which side grinding skin can be removed without generating cracks on the periphery of a device. The wafer processing method comprises a wafer grinding process for grinding the back of the wafer so that the wafer has a desirable thickness; a grinding skin forming process for projecting transmissive laser rays relative to a wafer from the back along interval channels and forming a grinding skin which is following depth away from the surface of the wafer in the wafer along the interval channels; a wafer slitting process for dividing the wafer into devices along interval channels of the grinding skin by applying outside forces on the wafer; and the grinding skin removing process for grinding the back of the wafer to make the devices having a finished thickness and to remove the grinding skin. The grinding skin removing process is carried out by a grinding tool formed by diamond abrasive particles fixed by ceramic bonding agent, wherein the grain diameters of the diamond abrasive particles are 0.5-7 micrometers.
Description
Technical field
The present invention relates to a kind of wafer is divided into the processing method of the wafer of device one by one along spacing track, described wafer marks off a plurality of zones and be formed with device in these a plurality of zone by being the spacing track that clathrate ground forms on the surface.
Background technology
In semiconductor devices manufacturing process, on the surface of the semiconductor wafer of circular plate shape roughly, integrated circuit), LSI (Large Scale Integration: device such as large scale integrated circuit) mark off a plurality of zones by being the preset lines of cutting apart that is called as spacing track of arranging on clathrate ground, in the zone that this marks off, form IC (Integrated Circuit:.Then, the Region Segmentation that will be formed with device by along spacing track semiconductor wafer being cut off comes, thereby produces device one by one.In addition, about on the surface of sapphire substrate or silicon carbide substrate, being laminated with the optical device wafer of gallium nitride compound semiconductor etc., also be divided into optical device such as light emitting diode, laser diode one by one, and be widely used in electrical equipment by cutting off along spacing track.
As the method for cutting apart wafer along spacing track, attempted following laser processing: use to have radioparent pulse laser light, focal point is aimed at the internally irradiated with pulse laser light in the zone that should cut apart with respect to wafer.In the dividing method that has used this laser processing, from a face side of wafer with the focal point alignment wafer internally along spacing track irradiated with pulse laser light, the wavelength of this pulse laser light is for to have radioparent wavelength with respect to wafer, thereby form metamorphic layer continuously in the inside of wafer along spacing track, the spacing track that reduces along the intensity by forming this metamorphic layer applies external force, thus wafer is divided into device (for example, with reference to patent documentation 1) one by one.
Yet the side of the device one by one that is partitioned at the dividing method that utilizes above-mentioned patent documentation 1 to be put down in writing is remaining metamorphic layer, and the bending strength that therefore has a device descends and problem that the quality of device is descended.Especially, in optical device, if remaining in the side have a metamorphic layer, then the light that also exists optical device to send is metamorphosed partially absorbs and problem that brightness descends.
In order to eliminate this problem, proposition has the processing method of following described wafer: have radioparent laser beam along the spacing track irradiation with respect to wafer, form the metamorphic layer of predetermined thickness thus from the back side of wafer, after the spacing track that is formed with metamorphic layer is cut apart wafer,, the back side of wafer metamorphic layer is removed (for example with reference to patent documentation 2) thereby being carried out grinding.
Patent documentation 1: No. 3408805 communique of Japan's special permission
Patent documentation 2: TOHKEMY 2005-86161 communique
If as the processing method of above-mentioned patent documentation 2 disclosed wafers, utilize the grinding grinding tool to carry out grinding, thereby then have the situation that owing to grinding tool the impulsive force of the periphery effect of the device after cutting apart is caused cracking at the periphery of device damage device to being divided into one by one the back side of the wafer of device.In addition, also can produce same problem in the following cases: by the wafer that is formed by quartz is had as described above the laser beam of radioparent wavelength with respect to wafer along the spacing track irradiation, come to form the metamorphic layer of predetermined thickness from the back side of wafer, after the spacing track that is formed with metamorphic layer is cut apart wafer, thereby grinding is carried out at the back side of wafer metamorphic layer is removed, made cover glass (cover glass) thus.
Summary of the invention
The present invention finishes in view of the above fact, and major technique problem of the present invention is to provide a kind of processing method of the wafer that can under the situation that the periphery of device is one by one cracked the metamorphic layer of side be removed.
In order to solve above-mentioned major technique problem, according to the present invention, a kind of processing method of wafer is provided, in the processing method of this wafer, cut apart wafer along spacing track, described wafer marks off a plurality of zones on the surface by the spacing track that is the formation of clathrate ground, and in described a plurality of zones, be formed with device, the processing method of described wafer is characterised in that, the processing method of described wafer comprises following operation: the grinding wafer operation, in this grinding wafer operation, grinding is carried out at the back side of wafer, thereby made the thickness of wafer form preset thickness; Metamorphic layer forms operation, form in the operation at this metamorphic layer, have radioparent laser beam along the spacing track irradiation with respect to wafer from the rear side of having implemented the wafer after the described grinding wafer operation, form metamorphic layer apart from the surperficial following degree of depth of wafer in the inside of wafer along spacing track, the described degree of depth is greater than the thickness of finishing of device; The wafer segmentation process in this wafer segmentation process, applies external force to having implemented the wafer that described metamorphic layer forms after the operation, along the spacing track that is formed with metamorphic layer wafer is divided into device one by one; And metamorphic layer is removed operation, remove in the operation at this metamorphic layer, grinding is carried out at the back side of having implemented the wafer behind the described wafer segmentation process, make wafer form the thickness of finishing of device, thus metamorphic layer is removed, described metamorphic layer is removed operation and used following grinding grinding tool to implement: this grinding grinding tool is that 0.5 μ m～diamond abrasive grain of 7 μ m is fixed and formed by utilizing vitrified bond to particle diameter.
In the present invention, metamorphic layer is removed operation and used following grinding grinding tool to implement: this grinding grinding tool is that 0.5 μ m～diamond abrasive grain of 7 μ m is fixed and formed by utilizing vitrified bond to particle diameter, wherein, remove in the operation at described metamorphic layer, grinding is carried out at the back side to the wafer of having implemented segmentation process, make wafer form the thickness of finishing of device, thus metamorphic layer is removed, and in described segmentation process, along the spacing track that is formed with metamorphic layer wafer is divided into device one by one, therefore, even if wafer has been divided into device one by one, because therefore grinding tool can not crack at device little by the impulsive force of the periphery effect of the device that separated.
Description of drawings
Fig. 1 is stereogram and the major part amplification view that illustrates as the semiconductor wafer of wafer.
Fig. 2 is the stereogram that surface that semiconductor wafer shown in Figure 1 is shown sticks on the state of the cutting belt that is assemblied in ring-shaped frame.
Fig. 3 is the key diagram of the grinding wafer operation in the processing method of wafer involved in the present invention.
Fig. 4 is the major part stereogram that the metamorphic layer that is used for implementing the processing method of wafer involved in the present invention forms the laser processing device of operation.
Fig. 5 is the key diagram that the metamorphic layer in the processing method of optical device wafer involved in the present invention forms operation.
Fig. 6 is the stereogram of segmenting device of wafer segmentation process that is used for implementing the processing method of wafer involved in the present invention.
Fig. 7 is the key diagram of the wafer segmentation process in the processing method of wafer involved in the present invention.
Fig. 8 is that the metamorphic layer in the processing method of wafer involved in the present invention is removed the key diagram of operation.
Fig. 9 removes the cutaway view of the major part of the semiconductor wafer after the operation shown in amplifying with having implemented metamorphic layer in the processing method of wafer involved in the present invention.
Figure 10 is the key diagram of the wafer transfer operation in the processing method of wafer involved in the present invention.
Figure 11 is the stereogram of the pick device that picks up operation that is used for implementing the processing method of wafer involved in the present invention.
Figure 12 is the key diagram that picks up operation in the processing method of wafer involved in the present invention.
Label declaration
2: semiconductor wafer; 20: silicon substrate; 21: device layer; 3: grinding attachment; 31: the chuck table of grinding attachment; 32: emery wheel; 321: the grinding grinding tool; 4: laser processing device; 41: the chuck table of laser processing device; 42: the laser light irradiation member; 5: the wafer segmenting device; 56: tension force applies member; 7: pick device; F: ring-shaped frame; T: cutting belt.
The specific embodiment
Below, be described in detail with reference to the preferred implementation of accompanying drawing the processing method of wafer involved in the present invention.
Fig. 1 represents to utilize the processing method of wafer involved in the present invention processes as the stereogram of the semiconductor wafer of wafer and with the major part of this wafer cutaway view shown in amplifying.(a) of Fig. 1 and (b) shown in semiconductor wafer 2 constitute by silicon wafer, be that the surface of the silicon substrate 20 of 600 μ m utilizes device layer 21 to be devices 22 such as being formed with a plurality of IC, LSI rectangularly at thickness for example, described device layer 21 is by dielectric film and be used to form stacked the forming of functional membrane of circuit.And each device 22 comes by forming cancellate spacing track 23 divisions.The thickness of device layer 21 for example forms 10 μ m.Below, the processing method of device 22 describes to being divided into this semiconductor wafer 2 one by one along spacing track 23.
At first, in order to protect the device on the surface that is formed at semiconductor wafer, the guard block stickup operation of guard block is pasted on the surface that is implemented in semiconductor wafer.That is, as shown in Figure 2, the surperficial 2a of semiconductor wafer 2 is sticked on surface as the cutting belt T of guard block, this cutting belt T is assemblied in the ring-shaped frame F that is formed by metal material.In addition, in the illustrated embodiment, it is that the surface of the flat substrates that is formed by polyvinyl chloride (PVC) of 100 μ m is coated with the paste that thickness is the crylic acid resin of about 5 μ m that above-mentioned cutting belt T forms at thickness.This paste uses the paste with character that bonding force descends by irradiation ultraviolet radiation.
After sticking on the surperficial 2a of semiconductor wafer 2 on the cutting belt T that is assemblied in ring-shaped frame F, implement grinding is carried out so that the thickness of wafer forms the grinding wafer operation of predetermined thickness in the back side of wafer by implementing above-mentioned guard block to paste operation.This grinding wafer operation uses grinding attachment 3 shown in Figure 3 to implement.Grinding attachment 3 shown in Figure 3 possesses chuck table 31 and emery wheel 32, and described chuck table 31 is used to keep machined object, and described emery wheel 32 possesses the grinding grinding tool 321 that is used for the machined object that remains in this chuck table 31 is carried out grinding.In addition, being used to of chuck table 31 keeps the central portion of machined object to form highly, and peripheral part forms lowlyer than central portion.In addition, grinding grinding tool 321 use by utilize vitrified bond fixedly particle diameter be that 40 μ m～50 μ m and concentration degree are the grinding grinding tool that 50 diamond abrasive grain forms.When using the grinding attachment 3 that constitutes by this way to implement above-mentioned grinding wafer operation, as shown in Figure 3, with the cutting belt T side mounting of above-mentioned semiconductor wafer 2 on the chuck table 31 of grinding attachment 3, and ring-shaped frame F mounting in the peripheral part of chuck table 31, is attracted semiconductor wafer 2 and ring-shaped frame F to remain on the chuck table 31 by making not shown attraction member work.Therefore, for the semiconductor wafer 2 that is maintained on the chuck table 31, the back side 20b of silicon substrate 20 is positioned at upside.After by this way semiconductor wafer 2 being attracted to remain on the chuck table 31, make chuck table 31 towards the rotating speed rotation of the direction shown in the arrow 31a on one side with for example 300rpm, make emery wheel 32 towards the rotating speed rotation of the direction shown in the arrow 32a on one side with for example 6000rpm, and emery wheel 32 is contacted with the back side 20b of the silicon substrate 20 that constitutes semiconductor wafer 2, and, make emery wheel 32 carry out for example grinding and feeding of 410 μ m with for example grinding and feeding speed of 3 μ m/ seconds towards the direction shown in the arrow 32b.As a result, the back side 20b of silicon substrate 20 is ground, and semiconductor wafer 2 forms preset thickness (being 200 μ m in the illustrated embodiment).
After having implemented above-mentioned grinding wafer operation, implement metamorphic layer and form operation, layer forms in the operation on the turn, have radioparent laser beam along the spacing track irradiation with respect to wafer from the rear side of wafer, at the metamorphic layer of the inside of wafer formation apart from the surperficial following degree of depth of wafer, the described degree of depth is greater than the thickness of finishing of device along spacing track.This metamorphic layer forms operation and uses laser processing device 4 shown in Figure 4 to implement.Laser processing device 4 shown in Figure 4 possesses: chuck table 41, and this chuck table 41 is used to keep machined object; Laser light irradiation member 42, this laser light irradiation member 42 are used for remaining on the machined object irradiating laser light on this chuck table 41; And shooting member 43, this shooting member 43 is used for the machined object that remains on the chuck table 41 is made a video recording.Chuck table 41 constitutes and is used for attracting to keep machined object, utilize not shown processing feeding member that this chuck table 41 is moved along the processing direction of feed shown in the arrow X among Fig. 4, and utilize not shown index feed member that this chuck table 41 is moved along the index feed direction shown in the arrow Y among Fig. 4.
Above-mentioned laser light irradiation member 42 comprises the housing 421 of the drum of horizontal arrangement in fact.Be equipped with not shown pulse laser light vibration member in housing 421, this pulse laser light vibration member possesses pulsed laser light line oscillator and repetition rate setting element.Terminal part at above-mentioned housing 421 is equipped with concentrator 422, and this concentrator 422 is used for the pulse laser light that goes out from pulse laser light vibration member exciting is carried out optically focused.In addition, laser light irradiation member 42 possesses focal point position adjustment means (not shown), and this focal point position adjustment means is used to adjust the focal point position of the pulse laser light of being assembled by concentrator 422.
Terminal part at the housing 421 that constitutes above-mentioned laser light irradiation member 42 is equipped with shooting member 43, and this shooting member 43 is used for the machining area that is maintained at the machined object on this chuck table 41 is made a video recording.In the illustrated embodiment, this shooting member 43 utilizes the common imaging apparatus (CCD) that luminous ray makes a video recording except comprising, also comprise with inferior parts: infrared illumination member, this infrared illumination member are used for machined object irradiation infrared ray; Optical system, this optical system are used to catch the infrared ray that is irradiated by this infrared illumination member; And imaging apparatus (infrared C CD), this imaging apparatus is used to export the signal of telecommunication corresponding with the infrared ray that is captured by this optical system, and this shooting member 43 is sent to control member described later with the picture signal that photographs.
With reference to Fig. 4 and Fig. 5 metamorphic layer formation operation is described, layer forms in the operation on the turn, use above-mentioned laser processing device 4, focal point is positioned at the inside of silicon substrate 20, from the back side 20b side of silicon substrate 20 along spacing track 23 irradiating laser light, the wavelength of described laser beam is for having radioparent wavelength with respect to the silicon substrate 20 that constitutes above-mentioned semiconductor wafer 2, thereby at the metamorphic layer of the inside of silicon substrate 20 formation apart from the surperficial following degree of depth of semiconductor wafer 2, the described degree of depth is greater than the thickness of finishing of device.
At first, the cutting belt T side that is pasted with semiconductor wafer 2 is positioned on the chuck table 41 of above-mentioned laser processing device shown in Figure 44.Then, via cutting belt T semiconductor wafer 2 is remained on (wafer maintenance operation) on the chuck table 41 by making not shown attraction member work.Therefore, for the semiconductor wafer 2 that is held in chuck table 41, the back side 20b of silicon substrate 20 is positioned at upside.In addition, omitted the ring-shaped frame F ground that is equipped with cutting belt T and represent in Fig. 4, still, ring-shaped frame F is kept by the suitable framework retaining member that is provided on the chuck table 41.The chuck table 41 that attracts to maintain optical device wafer 2 like this by not shown processing feeding member be positioned in shooting member 43 under.
When chuck table 41 be positioned at shooting member 43 under the time, utilize shooting member 43 and not shown control member to carry out the calibrating operation that the machining area that should carry out Laser Processing to wafer 2 detects.Promptly, shooting member 43 and not shown control member are carried out image processing such as pattern match, images such as this pattern match handle spacing track 23 on the predetermined direction be used for being formed on semiconductor wafer 2, and along the position alignment between the concentrator 422 of the laser light irradiation member 42 of these spacing track 23 irradiating laser light, thereby finish the calibration (calibration procedure) of laser light irradiation position.In addition, for the spacing track 23 that on semiconductor wafer 2, forms, finish the calibration of laser light irradiation position too along direction with above-mentioned predetermined direction quadrature.At this moment, though the surface of the device layer that is formed with spacing track 23 21 in the semiconductor wafer 2 is positioned at downside, but, wait the shooting member that constitutes because shooting member 43 possesses by the infrared illumination member as mentioned above, be used to the imaging apparatus (infrared C CD) of catching ultrared optical system and being used to export the signal of telecommunication corresponding with infrared ray, therefore can spacing track 23 be made a video recording through the back side 20b of silicon substrate 20.
The semiconductor wafer 2 that is maintained on the chuck table 41 has device layer 21, after by the way the spacing track 23 on the surface that is formed at described device layer 21 being detected and carrying out the calibration of laser light irradiation position, the laser light irradiation zone that the concentrator 422 that makes chuck table 41 move to laser light irradiation member 42 shown in Fig. 5 (a) is positioned at, and the end (being left end in (a) of Fig. 5) of predetermined spacing track 23 is positioned at laser light irradiation member 42 concentrator 422 under.Then, make from the focal point P of the pulse laser light of concentrator 422 irradiation and be aligned in apart from the surperficial 2a (lower surface) of semiconductor wafer 2 by the upside position of 80 μ m for example.In order to be positioned at the precalculated position of semiconductor wafer 2 from the focal point P of the pulse laser light of this concentrator 422 irradiations, the height position detector that for example uses being used for of being put down in writing in the TOHKEMY 2009-63446 communique that the height and position of the machined object that remains in chuck table is detected detects the height and position of the upper surface of the semiconductor wafer 2 that is held in chuck table 41, and making not shown focal point position adjustment means work as benchmark with the position of the upper surface of detected semiconductor wafer 2, the focal point P with pulse laser light is positioned at the precalculated position thus.Then, on one side have the pulse laser light of radioparent wavelength with respect to the silicon substrate 20 that constitutes semiconductor wafer 2, the direction shown in the arrow X1 of chuck table 41 in Fig. 5 (a) is moved with the processing feed speed of being scheduled to from concentrator 422 irradiations.Then, shown in Fig. 5 (b), when the position of the other end (being right-hand member in (b) at Fig. 5) in the road, irradiation position arrival interval 23 of the concentrator 422 of laser light irradiation member 42, the irradiation of stop pulse laser beam, and the mobile of chuck table 41 stopped.As a result, the inside that is shown in the silicon substrate 20 that constitutes semiconductor wafer 2 as (c) of Fig. 5 (b) and Fig. 5 has formed continuous metamorphic layer 210 (metamorphic layer formation operation) along spacing track 23.This metamorphic layer 210 is formed at the position apart from the following degree of depth of surperficial 2a of semiconductor wafer 2 in silicon substrate 20, the described degree of depth is finished thickness (for example 20 μ m) greater than device.Implement above-mentioned metamorphic layer along all spacing tracks 23 that are formed at semiconductor wafer 2 and form operation.
The processing conditions that above-mentioned metamorphic layer forms in the operation is for example set in the following manner.
Light source: LD excites Q-switch Nd:YVO4 laser
Wavelength: 1064nm
Repetition rate: 80kHz
Pulse width: 120ns
Average output: 1.2W
The focal point diameter:
Processing feed speed: 100mm/ second
Form operation if utilize above-mentioned processing conditions to implement above-mentioned metamorphic layer, the degree of depth that is formed centrally above-below direction in then can being with the focal point P of pulse laser light is the metamorphic layer 210 of about 100 μ m.Therefore, forming operation by implementing above-mentioned metamorphic layer, is the metamorphic layer 210 of about 100 μ m having formed the degree of depth from the position apart from surperficial 2a (lower surface) the 30 μ m of semiconductor wafer 2 towards the back side of silicon substrate 20 20b (upper surface) side.That is, formed metamorphic layer 210 apart from the following degree of depth of surperficial 2a of semiconductor wafer 2 in the inside of silicon substrate 20 along spacing track 23, the described degree of depth is finished thickness (for example 20 μ m) greater than device.Like this, because metamorphic layer forms the thick state (for example 200 μ ms) of operation before the enforcement metamorphic layer is removed operation and implements down, therefore can easily the focal point P of pulse laser light be positioned at the position of expectation, can under not to device layer 21 hurtful situations, form metamorphic layer 210, wherein remove in the operation at described metamorphic layer, as described later grinding is carried out at the back side of the silicon substrate 20 that constitutes semiconductor wafer 2, thereby finish thickness (for example 20 μ m) with what wafer formed device, thus metamorphic layer is removed.
The metamorphic layer stated is on the implementation implemented segmentation process after forming operation, in segmentation process, applies external force to having implemented the wafer that metamorphic layer forms after the operation, along the spacing track that is formed with metamorphic layer wafer is divided into device one by one.This wafer segmentation process uses wafer segmenting device 5 shown in Figure 6 to implement.Wafer segmenting device 5 shown in Figure 6 possesses pedestal 51 and travelling table 52, and this travelling table 52 is being provided in along the mode that the direction shown in the arrow Y moves on this pedestal 51.Pedestal 51 forms rectangle, is equipped with two guide rails 511,512 at its both sides upper surface in parallel with each other along the direction shown in the arrow Y.Travelling table 52 is provided on these two guide rails 511,512 in the mode that can move.Travelling table 52 moves along the direction shown in the arrow Y by mobile member 53.On travelling table 52, be equipped with the framework retaining member 54 that is used to keep above-mentioned ring-shaped frame F.Framework retaining member 54 has: main body 541 cylindraceous; Be arranged on the framework holding member 542 of ring-type of the upper end of this main body 541; And a plurality of binding clasps 543 that are provided in the periphery of this framework holding member 542 as fixed component.The framework retaining member 54 of Gou Chenging utilizes the ring-shaped frame F of 543 pairs of mountings of binding clasp on framework holding member 542 to fix by this way.In addition, wafer segmenting device 5 shown in Figure 6 possesses the revolving member 55 that is used to make 54 rotations of said frame retaining member.This revolving member 55 has: pulse motor 551, and this pulse motor 551 is equipped on above-mentioned travelling table 52; Belt wheel 552, this belt wheel 552 is assemblied in the rotating shaft of this pulse motor 551; And endless belt 553, this endless belt 553 is around being hung on this belt wheel 552 and main body cylindraceous 541.The revolving member 55 of Gou Chenging rotates framework retaining member 54 by driving pulse motor 551 via belt wheel 552 and endless belt 553 by this way.
With reference to Fig. 7 the wafer fracture of using 5 enforcements of above-mentioned wafer segmenting device is described.
To form the ring-shaped frame F that the semiconductor wafer 2 after the operation supports and shown in Fig. 7 (a), be positioned on the framework holding member 542 having implemented above-mentioned metamorphic layer via cutting belt T, and utilize binding clasp 543 to be fixed in framework holding member 542.Then, make mobile member 53 work, thereby travelling table 52 is moved along the direction (with reference to Fig. 6) shown in the arrow Y, shown in Fig. 7 (a), will be positioned at and constitute tension force and apply between the maintenance face that first of member 56 attracts the maintenance face of holding member 561 and the second attraction holding member 562 along the spacing track 23 (be the spacing track of high order end in the illustrated embodiment) that predetermined direction is formed at semiconductor wafer 2.At this moment, utilize 57 pairs of spacing tracks 23 of detection means to make a video recording, and carry out the contraposition between the maintenance face of the first maintenance face that attracts holding member 561 and the second attraction holding member 562.After between the maintenance face of the maintenance face that by this way a spacing track 23 is positioned at the first attraction holding member 561 and the second attraction holding member 562, make not shown attraction member work, attract hole 561a and 562a effect negative pressure thereby make, thus, via cutting belt T semiconductor wafer 2 being attracted to remain on first attracts the maintenance face and second of holding member 561 to attract on the maintenance face of holding member 562 (maintenance operation).
After the maintenance operation of stating on the implementation, make formation tension force apply the not shown mobile member work of member 56, thereby shown in Fig. 7 (b), make first to attract holding member 561 and second to attract holding member 562 to move towards the direction that deviates from mutually.The result, and the direction of spacing track 23 quadratures attract the maintenance face and second of holding member 561 to attract spacing track 23 effects between the maintenance face of holding member 562 that tensile force is arranged to being positioned in first, thereby semiconductor wafer 2 with the metamorphic layer 210 that is formed at silicon substrate 20 as the starting point that ruptures along spacing track 23 rupture (wafer segmentation process).By implementing this wafer segmentation process, cutting belt T extends slightly.In this wafer segmentation process, because semiconductor wafer 2 forms metamorphic layer 210 and intensity decline along spacing track 23, therefore, by making first to attract holding member 561 and second to attract holding member 562 to move about 0.5mm, semiconductor wafer 2 is ruptured along spacing track 23 as the starting point that ruptures with the metamorphic layer 210 that is formed at silicon substrate 20 towards the direction that deviates from mutually.
Implementing in the above described manner after the wafer segmentation process that a spacing track 23 that is formed at predetermined direction ruptures, removing the above-mentioned first attraction holding member 561 and second and attract the attraction of 562 pairs of semiconductor wafers 2 of holding member to keep.Then, make mobile member 53 work, make travelling table 52 move the suitable amount in interval with spacing track 23 along the direction (with reference to Fig. 6) shown in the arrow Y, spacing track 23 adjacent spacing tracks 23 that will and implement above-mentioned wafer segmentation process are positioned at and constitute between the maintenance face that tension force applies maintenance face that first of member 56 attracts holding member 561 and the second attraction holding member 562.Then, implement above-mentioned maintenance operation and wafer segmentation process.
After in the above described manner all spacing tracks 23 that are formed at predetermined direction having been implemented above-mentioned maintenance operation and wafer segmentation process, make revolving member 55 work, thereby make framework retaining member 54 rotate 90 degree.The result, the semiconductor wafer 2 that is kept by the framework holding member 542 of framework retaining member 54 also rotates 90 degree, thereby be formed at predetermined direction and implemented formed spacing track 23 on the direction of spacing track 23 quadratures of above-mentioned wafer segmentation process, be positioned in and first attract the maintenance face and second of holding member 561 to attract the parallel state of maintenance face of holding member 562.Then, all spacing tracks 23 of the direction of spacing track 23 quadratures that have been formed at and implemented above-mentioned wafer segmentation process are implemented above-mentioned maintenance operation and wafer segmentation process, thus, semiconductor wafer 2 is divided into device 22 one by one along spacing track 23.
After having implemented above-mentioned wafer segmentation process, implement metamorphic layer and remove operation, remove in the operation at this metamorphic layer, grinding is carried out at the back side of the wafer of having implemented the wafer segmentation process, make wafer form the thickness of finishing of device, thus metamorphic layer is removed.This metamorphic layer is removed operation and is used in fact the grinding attachment identical with above-mentioned grinding attachment shown in Figure 33 to implement.In addition, importantly, be equipped in be used to implement metamorphic layer remove the grinding grinding tool 321 of the emery wheel 32 on the grinding attachment shown in Figure 83 of operation use by utilize vitrified bond fixedly particle diameter be that 0.5 μ m～7 μ m and concentration degree are 30～70, preferably concentration degree is the grinding grinding tool that 50 diamond abrasive grain forms.The particle diameter of the diamond abrasive grain of formation grinding grinding tool 321 is according to the kind (silicon wafer of wafer, sapphire wafer, quartz wafer, GaAs (GaAs) wafer, gallium nitride (GaN) wafer, gallium phosphide (GaP) wafer) and different, according to the inventor's etc. experiment, be that the particle diameter of expectation diamond abrasive grain is 0.5 μ m～2 μ m under the situation of silicon wafer at wafer, be that the particle diameter of expectation diamond abrasive grain is 5 μ m～7 μ m under the situation of sapphire wafer at wafer, be that the particle diameter of expectation diamond abrasive grain is 3 μ m～6 μ m under the situation of quartz wafer at wafer, be that the particle diameter of expectation diamond abrasive grain is 1 μ m～3 μ m under the situation of GaAs wafer at wafer, be that the particle diameter of expectation diamond abrasive grain is 2 μ m～5 μ m under the situation of GaN wafer at wafer, be that the particle diameter of expectation diamond abrasive grain is 1.5 μ m～4 μ m under the situation of GaP wafer at wafer.The lower limit that constitutes the diamond abrasive grain of this grinding grinding tool 321 is the lower limit that can carry out the grinding of machined object, and the upper limit of this diamond abrasive grain is the higher limit of carrying out grinding when the state of implementing can to crack with the periphery that can not make device when metamorphic layer described later is removed operation.Therefore, in the illustrated embodiment, owing to be silicon wafer as the semiconductor wafer 2 of machined object, it is that 0.5 μ m～2 μ m and concentration degree are 50 that the diamond abrasive grain that therefore constitutes grinding grinding tool 321 is configured to particle diameter.
When the grinding attachment 3 enforcement metamorphic layers of stating are in the use removed operation, to implement the cutting belt T side of the semiconductor wafer 2 (being divided into device 22 one by one) of above-mentioned wafer segmentation process as shown in Figure 8, mounting is on the chuck table 31 of grinding attachment 3, and, ring-shaped frame F mounting in the peripheral part of chuck table 31, is attracted semiconductor wafer 2 and ring-shaped frame F to remain on the chuck table 31 by making not shown attraction member work.Therefore, the back side 20b that remains on the silicon substrate 20 of the semiconductor wafer 2 on the chuck table 31 is positioned at upside.After by this way semiconductor wafer 2 being attracted to remain on the chuck table 31, make chuck table 31 towards the rotating speed rotation of the direction shown in the arrow 31a on one side with for example 40rpm～300rpm, make emery wheel 32 towards the rotating speed rotation of the direction shown in the arrow 32a on one side with for example 1000rpm～3500rpm, and emery wheel 32 is contacted with the back side 20b of the silicon substrate 20 that constitutes semiconductor wafer 2, and, make emery wheel 32 carry out for example grinding and feeding of 180 μ m with for example grinding and feeding speed of 0.3 μ m/ second towards the direction shown in the arrow 32b.The result, the back side 20b that constitutes the silicon substrate 20 of semiconductor wafer 2 is ground, as shown in Figure 9, the metamorphic layer 210 that residues in the side of the device 22 that is separated one by one is removed, and what the thickness of semiconductor wafer 2 formed device finishes thickness (being 20 μ m in the illustrated embodiment).Like this, since metamorphic layer remove operation use by utilize vitrified bond fixedly particle diameter be that 0.2 μ m～2 μ m and concentration degree are that the grinding grinding tool that 50 diamond abrasive grain forms is implemented, therefore, even if semiconductor wafer 2 has been divided into device 22 one by one, because therefore grinding tool can not crack at device 22 little by the impulsive force of the periphery effect of the device 22 that separated.
The metamorphic layer of stating is on the implementation removed after the operation; implement the wafer transfer operation; in this wafer transfer operation; the surface that the back side of the wafer of device one by one sticks on the boundary belt that is assemblied in ring-shaped frame will be divided into; and, the above-mentioned cutting belt T that is pasted on wafer surface is peeled off and removes above-mentioned ring-shaped frame F.In this wafer transfer operation, shown in Figure 10 (a), be assemblied in cutting belt T (be pasted with and be divided into the semiconductor wafer 2 of the device 22 one by one) irradiation ultraviolet radiation of ring-shaped frame F from 6 pairs of ultraviolet radiation devices.As a result, bonding force descends thereby the bonding paste of cutting belt T hardens.Then, shown in Figure 10 (b), the surface (in (b) of Figure 10 for lower surface) that is assemblied in the cutting belt Ta of ring-shaped frame Fa is pasted on the back side 20b (being upper surface in (b) of Figure 10) of the silicon substrate 20 that constitutes semiconductor wafer 2, and wherein said semiconductor wafer 2 sticks on the cutting belt T that is assemblied in ring-shaped frame F.In addition, ring-shaped frame Fa with cutting belt Ta can be and above-mentioned ring-shaped frame F and the identical in fact structure of cutting belt T.Then, the semiconductor wafer 2 (being divided into device 22 one by one) that the surface is pasted on cutting belt T shown in Figure 10 (c) is peeled off from cutting belt T.At this moment, shown in Figure 10 (a), cutting belt T has been shone ultraviolet ray, thereby bonding paste sclerosis, the bonding force of cutting belt T descend, and therefore can easily semiconductor wafer 2 (being divided into device 22 one by one) be peeled off from cutting belt T.Then, the ring-shaped frame F that is equipped with cutting belt T is removed, thus, shown in Figure 10 (d), be divided into the surface that the semiconductor wafer 2 of device one by one is transferred to the cutting belt Ta that is assemblied in ring-shaped frame Fa.Like this, stick on surface and implement above-mentioned grinding wafer operation under the state of the cutting belt T that is assemblied in ring-shaped frame F wafer, metamorphic layer forms operation, wafer segmentation process and metamorphic layer and removes operation, semiconductor wafer 2 is divided into device 22 one by one, implement the wafer transfer operation then, therefore, can under the state that semiconductor wafer 2 does not break, make semiconductor wafer 2 positive and negatives turn and change and be labelled to the cutting belt Ta that is assemblied in ring-shaped frame Fa.Therefore, can change the continuity test of implementing device 22 under the state that is labelled to the cutting belt Ta that is assemblied in ring-shaped frame Fa will being divided into the semiconductor wafer 2 of device 22 one by one.
After implementing the wafer transfer operation in the above described manner, implement to pick up operation, pick up in the operation at this, the device surface, that separated one by one that sticks on the boundary belt that is assemblied in ring-shaped frame is peeled off and picked up from boundary belt.This picks up operation and uses pick device 7 shown in Figure 11 to implement.Pick device 7 shown in Figure 11 possesses: framework retaining member 71, and this framework retaining member 71 is used to keep above-mentioned ring-shaped frame Fa; Band expansion 72, this band expansion 72 are used to make the cutting belt Ta expansion that is assemblied in the ring-shaped frame Fa that is kept by this framework retaining member 71; And pick up chuck 73.Framework retaining member 71 has the framework holding member 711 of ring-type and is provided in a plurality of binding clasps 712 as fixed component of the periphery of this framework holding member 711.The upper surface of framework holding member 711 is formed for the mounting surface 711a of mounting ring-shaped frame Fa, and ring-shaped frame Fa is positioned on this mounting surface 711a.Then, the ring-shaped frame Fa that utilizes binding clasp 712 will be positioned on the mounting surface 711a is fixed in framework holding member 711.The framework retaining member 71 of Gou Chenging is supported to and can advances and retreat along the vertical direction by band expansion 72 by this way.
Band expansion 72 possesses expansion drum 721, and this expansion drum 721 is provided in the inboard of the framework holding member 711 of above-mentioned ring-type.The internal diameter of this expansion drum 721 and the external diameter all internal diameter than ring-shaped frame Fa are little and bigger than the external diameter of the semiconductor wafer 2 that is assemblied in this ring-shaped frame Fa (being divided into device 22 one by one).And expansion drum 721 has support lug 722 in the lower end.Band expansion 72 in the illustrated embodiment possesses supporting member 723, and this supporting member 723 can make the framework holding member 711 of above-mentioned ring-type advance and retreat along the vertical direction.This supporting member 723 is made of a plurality of cylinder 723a that are provided on the above-mentioned support lug 722, and the lower surface of the framework holding member 711 of the piston rod 723b of cylinder 723a and above-mentioned ring-type links.The supporting member 723 that is made of a plurality of cylinder 723a can make the framework holding member 711 of ring-type move along the vertical direction between reference position and expanded position like this, the upper end of the mounting surface 711a of described reference position shown in Figure 12 (a) and expansion drum 721 is positioned at the position of roughly the same height, and the mounting surface 711a of described expanded position shown in Figure 12 (b) leans on the position of below scheduled volume than the upper end of expansion drum 721.
With reference to Figure 12 the operation of picking up of using pick device 7 enforcements that constitute is in the above described manner described.Promptly, shown in Figure 12 (a), ring-shaped frame Fa is positioned on the mounting surface 711a of the framework holding member 711 that constitutes framework retaining member 71, and utilize binding clasp 712 that this ring-shaped frame Fa is fixed in framework holding member 711 (framework maintenance operation), wherein on described ring-shaped frame Fa, assembled and be pasted with the semiconductor wafer 2 cutting belt Ta of (being divided into device one by one).At this moment, framework holding member 711 is positioned the reference position shown in (a) of Figure 12.Then, make a plurality of cylinder 723a work that constitute band expansion 72, thereby make the framework holding member 711 of ring-type drop to the expanded position shown in (b) of Figure 12 as supporting member 723.Therefore, owing to the ring-shaped frame Fa on the mounting surface 711a that is fixed on framework holding member 711 also descends, therefore, the cutting belt Ta that is assemblied in ring-shaped frame Fa shown in Figure 12 (b) contacts and quilt expansion (band expansion process) with the last ora terminalis of expansion drum 721.As a result, be divided into device 22 one by one along spacing track 23, so the distance between each device 22 enlarges formation interval S owing to be pasted on the semiconductor wafer 2 of cutting belt Ta.Under this state, make the surface (upper surface) of picking up chuck 73 work and adsorbing maintenance device 22, device 22 is peeled off and picked up from cutting belt Ta.At this moment, shown in Figure 12 (b), utilize jack-up pin 74 from the downside of cutting belt Ta with device 22 jack-up, can easily device 22 be peeled off from cutting belt Ta thus.Because this jack-up pin 74 acts on the back side ground of device 22 with device 22 jack-up, therefore surface that can damage device 22.In addition, in picking up operation, the gap S between the device 22 is extended one by one as mentioned above, therefore can not contact with adjacent device 22, and easily pickup device 22.Owing to utilize the surface (upper surface) pick up the device 22 that chuck 73 picks up to be adsorbed maintenance by this way, need not to make the positive and negative upset of device 22 after therefore.
More than, describe the present invention according to illustrated embodiment, still, the present invention is not limited in embodiment, can carry out various distortion in the scope of purport of the present invention.For example; show in the above-described embodiment to stick on and implement above-mentioned grinding wafer operation under the state of the cutting belt that is assemblied in ring-shaped frame on surface with wafer; metamorphic layer forms operation; wafer segmentation process and metamorphic layer are removed the example of operation; but; also can on the surface that boundary belt is pasted on wafer, implement above-mentioned grinding wafer operation and metamorphic layer formation operation in the back; then the back side with wafer stick on the cutting belt that is assemblied in ring-shaped frame and state that boundary belt peeled off under implement above-mentioned wafer segmentation process, then on the surface that boundary belt is being pasted on wafer and cutting belt is peeled off the back implement metamorphic layer and remove operation from the back side of wafer.
Claims (1)
1. the processing method of a wafer in the processing method of this wafer, is cut apart wafer along spacing track, described wafer marks off a plurality of zones on the surface by the spacing track that is the formation of clathrate ground, and be formed with device in described a plurality of zones, the processing method of described wafer is characterised in that
The processing method of described wafer comprises following operation:
The grinding wafer operation in this grinding wafer operation, is carried out grinding to the back side of wafer, thereby is made the thickness of wafer form preset thickness;
Metamorphic layer forms operation, form in the operation at this metamorphic layer, have radioparent laser beam along the spacing track irradiation with respect to wafer from the rear side of having implemented the wafer after the described grinding wafer operation, form metamorphic layer apart from the surperficial following degree of depth of wafer in the inside of wafer along spacing track, the described degree of depth is greater than the thickness of finishing of device;
The wafer segmentation process in this wafer segmentation process, applies external force to having implemented the wafer that described metamorphic layer forms after the operation, along the spacing track that is formed with metamorphic layer wafer is divided into device one by one; And
Metamorphic layer is removed operation, removes in the operation at this metamorphic layer, and grinding is carried out at the back side of having implemented the wafer behind the described wafer segmentation process, makes wafer form the thickness of finishing of device, thus metamorphic layer is removed,
Described metamorphic layer is removed operation and used following grinding grinding tool to implement: this grinding grinding tool is that 0.5 μ m～diamond abrasive grain of 7 μ m is fixed and formed by utilizing vitrified bond to particle diameter.
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| JP2010009176A JP2011151070A (en) | 2010-01-19 | 2010-01-19 | Processing method for wafer |
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| JP5930645B2 (en) * | 2011-09-30 | 2016-06-08 | 株式会社ディスコ | Wafer processing method |
| JP6721420B2 (en) * | 2016-06-02 | 2020-07-15 | 株式会社ディスコ | Leakage light detection method |
| KR102345923B1 (en) * | 2017-05-18 | 2022-01-03 | 가부시기가이샤 디스코 | Protective sheeting for use in processing wafers, handling systems for wafers, and combinations of wafers and protective sheeting |
| JP7075242B2 (en) * | 2018-02-28 | 2022-05-25 | 株式会社ディスコ | Processing method of work piece |
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Application publication date: 20110817 |