CN103681491A - Processing method - Google Patents
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- CN103681491A CN103681491A CN201310399686.1A CN201310399686A CN103681491A CN 103681491 A CN103681491 A CN 103681491A CN 201310399686 A CN201310399686 A CN 201310399686A CN 103681491 A CN103681491 A CN 103681491A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Dicing (AREA)
Abstract
The invention provides a processing method capable of preventing adhesion of foreign matters such as crumbs and fragments of plate-shaped objects and the adhesion sheets when expanding and dividing the plate-shaped objects such as wafer and the like. When the wafer (1) is arranged on the extending strip (13) and the extending strip (13) is expanded for dividing the wafer (1) into chips (3), a protection strip (11) having elasticity is arranged on the surface (1a) of the wafer (1). Cut fragments (1e) produced in a process of dividing the wafer (1) into the chips (3) is adhered to an adhesion layer on a back side of the protection strip (11) after passing through a gap between the chips (3), so that the cut fragment (1e) is prevented from adhering on the surface (1a) of the wafer (1).
Description
Technical field
The present invention relates to the thin plate objects such as semiconductor wafer to be divided into the processing method of a plurality of chips.
Background technology
The discoideus wafers such as semiconductor wafer that are formed with a plurality of devices on surface are cut apart and are changed into semiconductor chip by monolithic along the preset lines of cutting apart between device.In cutting apart wafer, implemented such method: along cutting apart preset lines by the groove that carries out hemisect from face side and form or irradiating laser light beam and the vulnerable areas such as modified layer that form be made as and cut apart starting point, band that sticks on wafer by expansion etc. applies external force, thus, along cutting apart the starting point wafer that ruptures, thereby monolithic changes into chip.There is in the method in addition such problem: minute cuttings that produce during fracture are attached on the device of wafer surface.
On the other hand, for the adhesive linkage when chip is installed is in advance formed into the back side and such technology is provided: by DAF(Die Attach Film, die bonding film) etc. the adhesive sheet that adhesive linkage forms use pastes under the state at the back side of wafer, cuts apart wafer.In this situation, it is slightly larger than wafer diameter that adhesive sheet forms diameter, and a part that sticks on the adhesive sheet of chip back surface leans out from the periphery of wafer.At this moment, when cutting apart wafer, adhesive sheet is divided together with wafer, but adopting by when the expansion wafers such as expansion bands are cut apart the method for wafer, have such problem: the part leaning out from the periphery of wafer is also divided, and the chip of the adhesive sheet producing at that time can be attached to the surface of wafer.
Therefore, in order to address this problem, such technology has been proposed: in the expansion of wafer, by air blast member, wafer surface is sprayed to air, to make minute cuttings of wafer and the chip of adhesive sheet can not be attached to wafer surface (patent documentation 1).
Existing patent documentation
Patent documentation 1: TOHKEMY 2009-272503 communique
But, even if the technology of recording by above-mentioned document is also difficult to prevent completely that minute cuttings of wafer and the foreign matters such as chip of adhesive sheet are attached to wafer surface.
Summary of the invention
The present invention is the invention completing in view of above-mentioned thing, its main technical task is to provide a kind of processing method, when the plate objects such as wafer are expanded to cut apart, can prevent adhering to of minute cuttings of plate object and the foreign matters such as chip of adhesive sheet completely.
Processing method of the present invention is on surface, to be equipped with to have the boundary belt of retractility and along the processing method of cutting apart preset lines and be formed with the plate object of cutting apart starting point, above-mentioned processing method is characterised in that, have: paste step, expansion bands is pasted to the rear side that is pasted with the plate object of above-mentioned boundary belt on surface; Spread step, after having implemented above-mentioned stickup step, is equipped under the surperficial state of plate object and expands above-mentioned expansion bands, thereby the plate object of naming a person for a particular job from above-mentioned cutting apart is divided into chip one by one at above-mentioned boundary belt; And boundary belt removes step, after having implemented above-mentioned spread step, remove the surperficial above-mentioned boundary belt that is provided in plate object.
In processing method of the present invention; when implementing spread step, plate object is divided into chip; but because the surface at plate object is pasted with the boundary belt with retractility in advance, so the cuttings that divide that produced by cutting apart of plate object are attached to boundary belt by the gap of chip chamber.After having implemented spread step, owing to removing step and removing from plate object the boundary belt that is attached with minute cuttings by boundary belt, so can prevent that minute cuttings are attached to the surface of plate object completely.
In the present invention; comprise following mode; above-mentioned processing method has ring-shaped frame and pastes step; at this ring-shaped frame, paste in step; remove after step having implemented above-mentioned boundary belt; under the state at interval that has maintained the chip chamber one by one of cutting apart plate object and forming, ring-shaped frame is pasted to above-mentioned expansion bands, form the mode that a plurality of said chip of cutting apart plate object and forming is accommodated in to the opening of above-mentioned ring-shaped frame.According to which, maintain the interval of the chip chamber one by one after cutting apart, by being processed, ring-shaped frame can make chip not carry out conveyance etc. with damaging.
In addition; in the present invention; comprise such mode; above-mentioned processing method has interval and forms step; at this interval, form in step, remove after step having implemented above-mentioned boundary belt, state on the implementation before ring-shaped frame pastes step; expand above-mentioned expansion bands, thereby the chip chamber one by one forming cutting apart plate object forms predetermined interval.By appending this interval, form step, can guarantee to prevent from the interval between chip one by one that is partitioned into more reliably damaging chip because of the collision between chip.
In addition, in the present invention, comprise such mode, in above-mentioned stickup step, plate object sticks in above-mentioned expansion bands than the large adhesive sheet of plate object through diameter, in above-mentioned spread step, along the above-mentioned preset lines of cutting apart, cut apart above-mentioned adhesive sheet, and the above-mentioned adhesive sheet that the periphery of subtend plate object leans out divides.In which, by spread step, the adhesive sheet leaning out to the outer circumferential side of plate object is ruptured.The chip of the adhesive sheet producing during fracture is attached on boundary belt, thereby prevents that chip is attached directly to the surface of plate object.
Invention effect
According to the present invention, there is such effect, a kind of processing method is provided, when the plate objects such as wafer are expanded to cut apart, can prevent adhering to of minute cuttings of plate object and the foreign matters such as chip of adhesive sheet completely.
Accompanying drawing explanation
Fig. 1 means that the boundary belt of the processing method of the 1st execution mode of the present invention pastes the stereogram of step.
Fig. 2 means the stereogram of back side grinding step of the processing method of the 1st execution mode.
Fig. 3 means that the modified layer of the processing method of the 1st execution mode forms the stereogram of step.
Fig. 4 means that modified layer forms the partial sectional view of wafer of the details of step.
Fig. 5 means the stereogram of stickup step of the processing method of the 1st execution mode.
Fig. 6 means the stereogram of spread step of the processing method of the 1st execution mode.
Fig. 7 means the cutaway view of spread step.
Fig. 8 means the stereogram of the state after spread step.
Fig. 9 means that the boundary belt of the processing method of the 1st execution mode removes the stereogram of step.
Figure 10 means that the interval of the processing method of the 1st execution mode forms the stereogram of step.
In Figure 11, (a) mean that the ring-shaped frame of the processing method of the 1st execution mode is pasted the stereogram of step, (b) mean the cutaway view that the expansion bands after ring-shaped frame stickup step is cut off.
Figure 12 means the stereogram of having taken out of the state of wafer after cutting off expansion bands from expanding unit.
Figure 13 means the stereogram of stickup step of the processing method of the 2nd execution mode of the present invention.
Figure 14 means the stereogram of spread step of the processing method of the 2nd execution mode.
Figure 15 means the cutaway view of the spread step of the 2nd execution mode.
Figure 16 means the stereogram of the state after the spread step of the 2nd execution mode.
Figure 17 means that the boundary belt of the processing method of the 2nd execution mode removes the stereogram of step.
Figure 18 means the cutaway view of the expanding unit of the 3rd execution mode of the present invention, (a) represents to have placed the state of wafer, (b) represents to have carried out the state of spread step.
Label declaration
1 ... wafer (plate object)
1a ... the surface of wafer
1b ... the back side of wafer
1c ... modified layer (cutting apart starting point)
3 ... chip
11 ... boundary belt
12 ... adhesive sheet
12a ... the portion that leans out of adhesive sheet
13 ... expansion bands
14 ... ring-shaped frame
14a ... the opening of ring-shaped frame.
Embodiment
Below, with reference to accompanying drawing, to comprising the processing method of wafer of the 1st execution mode of processing method of the present invention, describe.
(1) the 1st execution mode
(1-1) boundary belt is pasted step
As shown in Figure 1, the boundary belt 11 with retractility is pasted to whole of the surperficial 1a of the discoideus wafer (plate object) 1 such as semiconductor wafer.On the surface of wafer 1, (in Fig. 1, lower face side is surface) 1a is clathrate and is set with many and cuts apart preset lines, at each device area by cutting apart a plurality of rectangular shapes that preset lines marks off, is formed with respectively and has LSI(large scale integrated circuit) etc. the device 2 of electronic loop.About boundary belt 11, use the boundary belt etc. that is formed with adhesion layer in the one side with the band of the synthetic resin such as the polyvinyl chloride of retractility or polyolefin, through adhesion layer, in the surperficial mode of cover wafers 1, paste boundary belt 11.
(1-2) back side grinding step
Next; as shown in Figure 2; making boundary belt 11 sides aim at holding tables 21 and keep wafer 1 by holding table 21, carry out the back side 1b of the wafer 1 that grinding exposes upward by grinding member 22, is predetermined thickness (for example 50～100 μ m left and right) thereby make wafer 1 thinning.
Holding table 21 is to be attracted the suction function producing and machined object absorption is remained to the general well-known negative pressure chuck table on the round-shaped level maintenance face being formed by porous material by air, utilizes not shown rotary drive mechanism that holding table 21 is pivoted.Grinding member 22 is such members: the end at the main shaft 23 that extends along vertical direction and rotarilyd actuate by not shown motor is fixed with Grinding wheel 25 through flange 24, and grinding member 22 is movably equipped on the top of holding table 21 up and down.At the lower surface peripheral part of Grinding wheel 25, arrange in the form of a ring and be fastened with a plurality of grinding tools 26.Grinding tool 26 uses the corresponding material of material with wafer 1, for example, uses by adhesives such as metal-to-metal adhesive or resin binders the diamond abrasive grain diamond abrasive tool that is shaped etc. of getting together.
In grinding step, make boundary belt 11 sides aim at maintenance face wafer 1 is loaded on holding table 21, by negative pressure chuck, adsorb and keep wafer 1.And self-sustaining workbench 21 rises grinding member 22 is declined to the state of a direction rotation at a predetermined velocity, the grinding tool of the Grinding wheel of rotation 25 26 is pressed into the back side 1b of wafer 1, thereby 1b whole face in the back side is carried out to grinding.
(1-3) modified layer forms step
Next, along cutting apart preset lines, irradiate the laser beam with respect to wafer 1 with radioparent wavelength, thereby form along the modified layer of cutting apart preset lines in the inside of wafer 1.Formation about modified layer; as shown in Figure 3; make boundary belt 11 sides aim at the maintenance face of the negative-pressure card disc type holding table 31 that can rotate same with above-mentioned holding table 21, wafer 1 is loaded on holding table 31, by negative pressure chuck, adsorb and keep wafer 1.And, as shown in Figure 4, under the state of inside that focal point is navigated to wafer 1, from being equipped on the irradiation portion 33 of the Ear Mucosa Treated by He Ne Laser Irradiation member 32 of holding table 31 tops, back side 1b side from grinding, along cutting apart preset lines, irradiate the laser beam L with respect to wafer 1 with radioparent wavelength, thereby form modified layer 1c.
Holding table 31 can move at the directions X shown in Fig. 3 and Y-direction, for example, by making the processing feeding that holding table 31 moves at directions X carry out laser beam L for the scanning of wafer 1.In this situation, by the index feed that holding table 31 is moved in Y-direction, carry out the preset lines of cutting apart of Selective irradiation laser beam L.In addition, in order to be set as the state along directions X by cutting apart preset lines, make holding table 31 rotations.From the plane of illumination (back side 1b of wafer 1) of laser beam L, in the position of certain depth, with certain bed thickness, form modified layer 1c.Modified layer 1c has the low characteristic of other parts in strength ratio wafer 1, and after spread step in become the starting point of cutting apart of wafer 1.
(1-4) paste step
Next, as shown in Figure 5, the back side 1b side of wafer 1 is set in expansion bands 13.Expansion bands 13 is such as being the expansion bands that the one side that has a synthetic resin sheet etc. of retractility at polyvinyl chloride or polyolefin etc. is formed with adhesion layer, uses the expansion bands of the rectangular shape larger than wafer 1 or is wound as the expansion bands of drum.Paste in step, the back side 1b of wafer 1 is aimed at and pastes to the adhesion layer side of the central portion that expands to 13.
(1-5) spread step
Next, carry out following spread step: at boundary belt 11, be equipped under the state of surperficial 1a of wafer 1 and expand expansion bands 13, from modified layer 1c, wafer 1 is divided into chip 3 one by one.
In spread step, use the expanding unit 40 shown in Fig. 6 and Fig. 7.Expanding unit 40 has clamping part 41, and clamping part 41 is controlled respectively the ora terminalis on 13 4 limits of expansion bands and to the outside tractive with ora terminalis quadrature.Clamping part 41 is the structures that obtain of the cross section framework 42 that is L word shape of having take laterally zygomorphic combinations of states, in the inner side of each framework 42, is closely arranged with a plurality of rollers 43.These rollers 43 are supported on framework 42 in the mode that can rotate centered by the rotating shaft of long side direction that is orthogonal to framework 42.Expansion bands 13 is clamped between upper and lower roller 43, when expansion bands 13 under clamp position when direction along ora terminalis is extended, roller 43 follows this and rolls.
About the expansion of expansion bands 13, first, between the framework up and down 42 of the ora terminalis on four limits that makes expansion bands 13 through each clamping part 41 of expanding unit 40, make upper and lower framework 42 close to each other, by upper and lower roller 43, clamp expansion bands 13.Then, make clamping part 41 laterally (direction of arrow of Fig. 6 and Fig. 7) thus mobile expansion expansion bands 13.Because the roller 43 by clamping part 41 clamps, even produce unbalanced deformation due to expansion in expansion bands 13, by the rolling of roller 43, can discharge this deformation, can expand equably expansion bands 13.
By expanding like this expansion bands 13, as shown in Figure 8, wafer 1 is that modified layer 1c is divided into chip 3 one by one along cutting apart preset lines from cutting apart starting point.Because boundary belt 11 has retractility, so boundary belt 11 in the situation that stick on the surperficial 1a of wafer 1 and expand together with expansion bands 13, allows to expand the interval between each chip 3 thus.
When wafer 1 is divided into chip 3, produce minute cuttings, minute cuttings will and disperse to the face side of wafer 1 through the gap between chip 3, but this minute cuttings are attached to the adhesion layer at the back side of boundary belt 11.
(1-6) boundary belt is removed step
Next, as shown in Figure 9, remove the boundary belt 11 of the surperficial 1a that is provided in wafer 1.Adhesion layer in the rear side of the boundary belt 11 of removing is attached with as shown in the figure minute cuttings 1e that produces by cutting apart, will disperse through the gap between chip 3, and the surperficial 1a that has removed the wafer 1 of boundary belt 11 is clean state.
(1-7) interval forms step
Next, as shown in figure 10, again by expanding unit 40, expand expansion bands 13, between the chip one by one 3 forming cutting apart wafer 1, form predetermined interval.
(1-8) ring-shaped frame is pasted step
Next, having maintained under the state at the interval between the chip one by one 3 of cutting apart wafer 1 and forming, as shown in Figure 11 (a), ring-shaped frame 14 is pasted to the face side that is formed with adhesion layer of expansion bands 13.Ring-shaped frame 14 is to have the big or small framework that can be provided in clamping part 41 inner sides, and the metallic plate that this ring-shaped frame 14 has rigidity by stainless steel etc. forms.Ring-shaped frame 14 be take and pasted expansion bands 13 with wafer 1 as concentric mode, cut apart thus wafer 1 and a plurality of chips 3 of forming for being accommodated in the state of the opening 14a of ring-shaped frame 14.
Then, as shown in Figure 11 (b), by cutting machine 50, cut off the adhesive portion of expansion bands 13 of the rear side of ring-shaped frame 14.Thus, from expanding unit 40, take out of the structure shown in Figure 12, said structure is in such state: wafer 1 a plurality of chips 3 divided and that form are pasted on expansion bands 13 center.By carrying out process chip 3 with ring-shaped frame 14, and transfer to the subsequent processing operation of picking up of expansion bands 13 pick-up chips 3 (for example from).
(1-9) action effect
In the processing method of the 1st execution mode as above; when implementing spread step, wafer 1 is divided into chip 3; but because the surperficial 1a at wafer 1 is pasted with the boundary belt 11 with retractility in advance, a minute cuttings 1e who produces so cut apart wafer 1 is attached to the adhesion layer of the rear side of boundary belt 11 by the gap between chip 3.After having implemented spread step, owing to removing step by boundary belt, from wafer 1, remove and be attached with a minute boundary belt of cuttings 1e 11, so can prevent that minute cuttings 1e is attached to the surperficial 1a of wafer 1 completely.
In the present embodiment, having implemented spread step, after wafer 1 is divided into a plurality of chips 3, under the state at the interval between the chip one by one 3 having maintained after cutting apart, ring-shaped frame 14 is pasted to expansion bands 13.Thus, expansion bands 13 remains on ring-shaped frame 14 with the state of having expanded, thereby maintains the interval between the chip one by one 3 after cutting apart.Therefore by ring-shaped frame 14 is processed, can not make chip 3 damages and carry out conveyance etc.
In addition, in the present embodiment, remove after step having implemented boundary belt; before implementing ring-shaped frame stickup step, implement interval and form step, at this interval, form in step; again expand expansion bands, between the chip one by one 3 forming cutting apart wafer 1, form predetermined interval.By implementing this interval, form step, the interval between the chip one by one 3 that can guarantee to be partitioned into, can prevent from damaging chip 3 because of the collision between chip 3 more reliably.
In addition; in the above-described embodiment; guard block 11 is to prevent that minute cuttings 1e of wafer 1 is attached to the guard block of wafer surface; but because the processing in beginning pastes wafer surface by guard block 11 before being back side grinding step; so after grinding step overleaf; in the processing of carrying out before removing guard block 11; there is such advantage: by guard block 11, for example make holding table 21,31 directly not be connected to surperficial 1a, guard block 11 can be applied flexibly as the guard block for the protection of device 2.
In addition, also can carry out as required interval and form step, if be formed with enough wide interval between chip 3 by spread step, also can omit interval and form step.
(2) the 2nd execution modes
Next, to having changed the 2nd later execution mode of above-mentioned stickup step, describe.
(2-1) paste step
As shown in figure 13, through the diameter adhesive sheet 12 larger than wafer 1, the back side 1b side of wafer 1 is set in expansion bands 13.In this pastes step, by the adhesive sheet 12 rounded shapes that formed by DAF etc. set the adhesion layer side of expansion bands 13, then the back side 1b side of wafer 1 is aimed at and is pasted in this adhesive sheet 12.In addition, also wafer 1 can be pasted to the expansion bands 13 that is equipped with in advance round-shaped adhesive sheet 12.Or, adhesive sheet 12 can also be pasted to the back side 1b of wafer 1, then this adhesive sheet 12 be pasted to the adhesion layer of expansion bands 13.Adhesive sheet 12 forms diameter than large round-shaped of wafer 1, becomes the state that has occurred the 12a of the portion that leans out of adhesive sheet 12 at the outer circumferential side of wafer 1.
(2-2) spread step
Next, as shown in Figure 14 and Figure 15, at boundary belt 11, be equipped under the state of surperficial 1a of wafer 1 and expand expansion bands 13.
As shown in figure 16, by expansion expansion bands 13, wafer 1 is that modified layer 1c is divided into chip 3 one by one along cutting apart preset lines from cutting apart starting point, and adhesive sheet 12 is along cutting apart preset lines division, thereby form the chip 3 with adhesive sheet 12, and expanded the interval between each chip 3.In addition, the 12a of the portion that leans out that the outer circumferential side to wafer 1 of adhesive sheet 12 leans out divides simultaneously.Because boundary belt 11 has retractility, so boundary belt 11 expansion together with expansion bands 13 under the state of surperficial 1a that sticks on wafer 1 allows the interval between each chip 3 to broaden thus.
When cutting apart wafer 1 and division adhesive sheet 12, produce minute cuttings of wafer 1 and the chip of adhesive sheet 12.These minute cuttings and chip will disperse to the surperficial 1a side of wafer 1 by the gap between chip 3, but are attached to the adhesion layer at the back side of boundary belt 11.In addition, while dividing together with the cutting apart of adhesive sheet 12 and wafer 1, the 12a of the portion that leans out that the outer circumferential side to wafer 1 of adhesive sheet 12 leans out divides simultaneously, produce chip and disperse, but this chip that leans out the 12a of portion is attached to the surface of boundary belt 11 from leaning out the 12a of portion.
Cooling adhesive sheet 12 when division adhesive sheet 12, adhesive sheet 12 easily divides, so be preferred.Such as directly or through the expansion bands 13 of rear side the cooling cooling fluids such as air being ejected into adhesive sheet 12 from face side, thus can cooling adhesive sheet 12.In addition, also can adopt such method: expanding unit 40 integral body are received in cooling chamber, thereby the atmosphere temperature in cooling chamber is set as to for example 0 ℃～-30 ℃ left and right, cooling, under whole state, expand.
(2-3) boundary belt is removed step
Next, as shown in figure 17, remove the boundary belt 11 of the surperficial 1a that is provided in wafer 1.The chip 12b of the adhesive sheet 12 that produces when the surface of the boundary belt 11 of removing and the back side are attached with division adhesive sheet 12 and disperse and produce while cutting apart wafer 1 and the wafer 1 that disperses divide cuttings 1e, the surperficial 1a that has removed the wafer 1 of boundary belt 11 is clean state.Then, with above-mentioned the 1st execution mode similarly, carry out ring-shaped frame after forming step and paste step carrying out as required interval, acquisition is divided into the state that sticks on expansion bands 13 with the wafer 1 of the chip 3 of adhesive sheet 12.
(2-4) action effect
In the 2nd execution mode, by implementing spread step, wafer 1 is divided into chip 3 and divides adhesive sheet 12 along cutting apart preset lines, the 12a of the portion that leans out of the adhesive sheet 12 of the outer circumferential side of wafer 1 is also divided.And a minute cuttings 1e for the chip 12b of the adhesive sheet 12 producing when cutting apart, dividing and wafer 1 is attached to boundary belt 11.After having implemented spread step, owing to removing the boundary belt 11 that is attached with the chip 12b of adhesive sheet 12 and minute cuttings 1e of wafer 1 from wafer 1, so can prevent that minute cuttings of chip 12b and wafer are attached to the surperficial 1a of wafer 1 completely.
(3) the 3rd execution modes
Figure 18 represents to use the appearance of expanding expansion bands 13 from above-mentioned different expanding unit 60, in above-mentioned expansion bands 13, through adhesive sheet 12, is pasted with the wafer 1 shown in Figure 12.That is, by this expanding unit 60, also can carry out above-mentioned spread step.
Expanding unit 60 is now configured to: at workbench 61 cylindraceous around, be equipped with can lifting by air cylinder device 62 self-powered platform 63, place wafer 1 above-mentioned ring-shaped frame 14 being pasted in advance under adhesive sheet 12 is pasted with the state of expansion bands 13 of wafer 1.The inside of workbench 31 is equipped with to the nozzle 64 of expansion bands 13 ejection cooling fluids.
Expansion about expansion bands 13, first, as shown in Figure 18 (a), the height and position of self-powered platform 63 is set as identical with workbench 61, wafer in expansion bands 13 1 is loaded into the upper surface of workbench 61, ring-shaped frame 14 is loaded on self-powered platform 63.Next, by being arranged on the clamping device 65 of self-powered platform 63, ring-shaped frame 14 is fixed on to self-powered platform 63.
And, as shown in Figure 18 (b), by making, the chilled state of adhesive sheet 12, to carry out following spread step from nozzle 64 ejection cooling fluids: dwindle air cylinder device 62, thereby cut apart wafer 1 and adhesive sheet 12 is divided into chip 3 one by one.When self-powered platform 63 declines, expansion bands 13 is expanded laterally, thereby cuts apart wafer 1 and adhesive sheet 12 by chip 3, and the 12a of the portion that leans out of adhesive sheet 12 division.
Even if also can carry out spread step by expanding unit 60 like this.Because the surperficial 1a at wafer 1 in spread step is pasted with boundary belt 11, so the chip 12b of the adhesive sheet 12 being produced by spread step can not be attached to the surperficial 1a of wafer 1.
In addition, in above-mentioned the 1st execution mode, by the modified layer 1c forming based on laser beam irradiation, form the starting point of cutting apart that preset lines forms of cutting apart along wafer 1, also can be by such as by cut and laser processing etc., the groove that preset lines forms etc. cut apart along the surperficial 1a of wafer 1 forms but cut apart starting point.
In addition, the back side grinding of wafer 1 is arbitrarily with the order that starting point is cut apart in formation, can be also contrary with above-mentioned the 1st execution mode, carries out the back side grinding of wafer 1 after starting point is cut apart in formation.
Claims (4)
1. a processing method, is on surface, to be equipped with to have the boundary belt of retractility and along the processing method of cutting apart preset lines and be formed with the plate object of cutting apart starting point,
Above-mentioned processing method is characterised in that to have:
Paste step, expansion bands is pasted to the rear side that is pasted with the plate object of above-mentioned boundary belt on surface;
Spread step, after having implemented above-mentioned stickup step, is equipped under the surperficial state of plate object and expands above-mentioned expansion bands, thereby the plate object of naming a person for a particular job from above-mentioned cutting apart is divided into chip one by one at above-mentioned boundary belt; And
Boundary belt is removed step, after having implemented above-mentioned spread step, removes the surperficial above-mentioned boundary belt that is provided in plate object.
2. processing method according to claim 1, is characterized in that,
Above-mentioned processing method has ring-shaped frame and pastes step; at this ring-shaped frame, paste in step; remove after step having implemented above-mentioned boundary belt; under the state at interval that has maintained the chip chamber one by one of cutting apart plate object and forming, ring-shaped frame is pasted to above-mentioned expansion bands, form the mode that a plurality of said chip of cutting apart plate object and forming is accommodated in to the opening of above-mentioned ring-shaped frame.
3. processing method according to claim 2, is characterized in that,
Above-mentioned processing method has interval and forms step; at this interval, form in step, remove after step having implemented above-mentioned boundary belt, state on the implementation before ring-shaped frame pastes step; expand above-mentioned expansion bands, thereby the chip chamber one by one forming cutting apart plate object forms predetermined interval.
4. processing method according to claim 1 and 2, is characterized in that,
In above-mentioned stickup step, plate object sticks in above-mentioned expansion bands than the large adhesive sheet of plate object through diameter, in above-mentioned spread step, along the above-mentioned preset lines of cutting apart, cut apart above-mentioned adhesive sheet, and the above-mentioned adhesive sheet that the periphery of subtend plate object leans out divides.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
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| JP2012206915A JP2014063813A (en) | 2012-09-20 | 2012-09-20 | Processing method |
| JP2012-206915 | 2012-09-20 |
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| JP (1) | JP2014063813A (en) |
| KR (1) | KR20140038303A (en) |
| CN (1) | CN103681491A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106816412A (en) * | 2017-01-19 | 2017-06-09 | 吉林麦吉柯半导体有限公司 | The cutting technique of wafer and the production method of wafer |
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| JP2015233066A (en) * | 2014-06-09 | 2015-12-24 | 株式会社ディスコ | Method for dividing plate-like object |
| JP6537414B2 (en) * | 2015-09-03 | 2019-07-03 | 株式会社ディスコ | Wafer processing method |
| JP6611130B2 (en) * | 2016-04-19 | 2019-11-27 | 株式会社ディスコ | Expanded seat |
| JP6706979B2 (en) * | 2016-06-27 | 2020-06-10 | 株式会社ディスコ | Expansion device and expansion method |
| JP6706980B2 (en) * | 2016-06-29 | 2020-06-10 | 株式会社ディスコ | Expansion device and expansion method |
| JP6991475B2 (en) * | 2017-05-24 | 2022-01-12 | 協立化学産業株式会社 | How to cut the object to be processed |
| JP7507572B2 (en) * | 2020-03-03 | 2024-06-28 | 株式会社ディスコ | Division method and division device |
| JP7486327B2 (en) * | 2020-03-05 | 2024-05-17 | 株式会社ディスコ | How the chip is manufactured |
| JP7499605B2 (en) | 2020-05-01 | 2024-06-14 | 株式会社ディスコ | Expanding Device |
| JP7486345B2 (en) | 2020-05-01 | 2024-05-17 | 株式会社ディスコ | EXPANSION METHOD AND EXPANSION DEVICE |
| JP7511981B2 (en) | 2020-08-05 | 2024-07-08 | 株式会社ディスコ | Method for manufacturing chip with adhesive film |
| CN117020397A (en) * | 2023-09-20 | 2023-11-10 | 北京理工大学 | Silicon carbide ingot stripping method based on space-time synchronous focusing laser |
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| KR20140038303A (en) | 2014-03-28 |
| JP2014063813A (en) | 2014-04-10 |
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