CN103681492A - Machining method - Google Patents
Machining method Download PDFInfo
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- CN103681492A CN103681492A CN201310414816.4A CN201310414816A CN103681492A CN 103681492 A CN103681492 A CN 103681492A CN 201310414816 A CN201310414816 A CN 201310414816A CN 103681492 A CN103681492 A CN 103681492A
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- expansion
- plate object
- cutting apart
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- 238000000034 method Methods 0.000 title abstract description 5
- 238000003754 machining Methods 0.000 title abstract 2
- 239000000853 adhesive Substances 0.000 claims description 53
- 230000001070 adhesive effect Effects 0.000 claims description 53
- 238000003672 processing method Methods 0.000 claims description 26
- 230000011218 segmentation Effects 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 90
- 238000001816 cooling Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000012809 cooling fluid Substances 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 241000278713 Theora Species 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 210000004877 mucosa Anatomy 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Engineering (AREA)
Abstract
The invention provides a machining method. When a wafer or other plate object, the back side of which is adhered with a paster, is expanded for segmentation, scraps of the paster can be completely prevented from attaching onto the surface of the plate object. When an expansion tape (13) is expanded so as to segment the wafer (1) into chips (3) in the state that the wafer (1) is arranged on the expansion tape (13) via the paster (12), a protection part (11) is arranged onto the surface (1a) of the wafer (1) and an extension part (12a), extending out of the outer periphery of the wafer (1), of the paster (12) is segmented (a first expansion step); then, the protection part (11) is removed (a protection part removing step); and the expansion tape is further expanded for segmentation of the wafer and the paster along preset segmenting lines, thereby obtaining the multiple chips with the paster (a second expansion step). In this way, the paster scraps generated when the paster is segmented are attached onto the protection part and are prevented from attaching onto the surface of the wafer.
Description
Technical field
The present invention relates to the thin plate objects such as semiconductor wafer to be divided into the processing method of a plurality of chips, particularly relate to the processing method of the plate object that is pasted with adhesive sheet.
Background technology
The discoideus wafers such as semiconductor wafer that are formed with a plurality of devices on surface are cut apart and are changed into semiconductor chip by monolithic along the preset lines of cutting apart between device.In addition, for the adhesive linkage when chip is installed is in advance formed into the back side and such technology is provided: at DAF(Die Attach Film, die bonding film) etc. the adhesive linkage adhesive sheet that forms use be pasted under the state at the back side of wafer, cut apart wafer.In this situation, it is slightly larger than wafer diameter that adhesive sheet forms diameter, and a part that sticks on the adhesive sheet of chip back surface leans out from the periphery of wafer.
When cutting apart wafer, adhesive sheet is divided together with wafer, thereby but when adopting the expansion bands etc. that sticks on wafer by expansion to apply external force and cut apart the method for wafer wafer, wherein, above-mentioned wafer has along the starting point of cutting apart of cutting apart preset lines, have such problem: the part leaning out from the periphery of wafer is also divided, the chip of the adhesive sheet producing at that time can be attached to the surface of wafer.
Therefore, in order to address this problem, such technology has been proposed: in the expansion of expansion sheet, by air blast member, wafer surface is sprayed to air, to make the chip of adhesive sheet can not be attached to wafer surface (patent documentation 1).
Prior art document
Patent documentation 1: TOHKEMY 2009-272503 communique
But, even if the technology of recording by above-mentioned document is also difficult to prevent completely that the chip of adhesive sheet is attached to wafer surface.
Summary of the invention
The present invention is the invention completing in view of above-mentioned thing, its main technical task is to provide a kind of processing method, when when being pasted with overleaf the plate objects such as wafer of adhesive sheet and expanding to cut apart, can prevent that the chip of adhesive sheet is attached to the surface of plate object completely.
Processing method of the present invention is on surface, to be equipped with guard block and along the processing method of cutting apart preset lines and be formed with the plate object of cutting apart starting point, above-mentioned processing method is characterised in that, have: paste step, the adhesive sheet larger than plate object through diameter sets plate object in expansion bands; The first expansion step, after having implemented above-mentioned stickup step, is equipped under the surperficial state of plate object and expands above-mentioned expansion bands, thereby the above-mentioned adhesive sheet that the outer circumferential side of subtend plate object leans out divides at above-mentioned guard block; Guard block is removed step, after having implemented above-mentioned the first expansion step, removes the above-mentioned guard block that is provided in plate object surface; And second expansion step; remove after step having implemented above-mentioned guard block; expand above-mentioned expansion bands, from the above-mentioned starting point of cutting apart, along the above-mentioned preset lines of cutting apart, cut apart plate object, and along the above-mentioned preset lines fracture above-mentioned adhesive sheet corresponding with plate object of cutting apart.
In processing method of the present invention, at guard block, be equipped under the state on plate object surface and complete the first expansion step, the adhesive sheet that at least outer circumferential side of subtend plate object leans out in this moment ruptures.The chip of the adhesive sheet producing during fracture is attached on guard block.After having implemented the first expansion step, owing to removing the guard block that is attached with chip from plate object, so can prevent that chip is attached to the surface of plate object completely.
In the present invention, comprise following mode, above-mentioned processing method has ring-shaped frame and pastes step, at this ring-shaped frame, paste in step, after having implemented above-mentioned the second expansion step, having maintained under the state at the interval between chip one by one of cutting apart plate object and forming, ring-shaped frame is pasted to above-mentioned expansion bands, form the mode that a plurality of said chip of cutting apart plate object and forming is accommodated in to the opening of above-mentioned ring-shaped frame.According to which, maintain the interval of the chip chamber one by one after cutting apart, by ring-shaped frame is processed can make chip not damaged carry out conveyance etc.
Invention effect
According to the present invention, a kind of processing method is provided, when the back side being pasted with to the plate objects such as wafer of adhesive sheet and expanding to cut apart, can prevent that the chip of adhesive sheet is attached to the surface of plate object completely.
Accompanying drawing explanation
Fig. 1 means that the guard block of the processing method of one embodiment of the present invention pastes the stereogram of step.
Fig. 2 means the stereogram of back side grinding step of the processing method of an execution mode.
Fig. 3 means that the modified layer of the processing method of an execution mode forms the stereogram of step.
Fig. 4 means that modified layer forms the partial sectional view of wafer of the details of step.
Fig. 5 means the stereogram of stickup step of the processing method of an execution mode.
Fig. 6 means the stereogram of the first expansion step of the processing method of an execution mode.
Fig. 7 means the cutaway view of the first expansion step.
Fig. 8 means the stereogram of the state after the first expansion step.
Fig. 9 means that the guard block of the processing method of an execution mode removes the stereogram of step.
Figure 10 means the stereogram of the second expansion step of the processing method of an execution mode.
Figure 11 means the cutaway view of the second expansion step.
In Figure 12, (a) mean that the ring-shaped frame of the processing method of an execution mode is pasted the cutaway view of step, (b) mean the cutaway view that the expansion bands after ring-shaped frame stickup step is cut off.
Figure 13 means after expansion bands is cut off and has taken out of the stereogram of the state of wafer from expanding unit.
Figure 14 means the stereogram of the expanding unit of other execution modes, (a) represents to have placed the state of wafer, (b) represents to have carried out the state of the first expansion step, (c) represents to have carried out the state of the second expansion step.
Label declaration
1... wafer (plate object)
The surface of 1a... wafer
1c... modified layer (cutting apart starting point)
3... chip
11... guard block
12... adhesive sheet
The portion that leans out of 12a... adhesive sheet
13... expansion bands
14... ring-shaped frame
The opening of 14a... ring-shaped frame.
Embodiment
Below, with reference to accompanying drawing, to comprising the processing method of wafer of an execution mode of processing method of the present invention, describe.
(1) guard block is pasted step
As shown in Figure 1, guard block 11 is pasted to whole of the surperficial 1a of the discoideus wafer (plate object) 1 such as semiconductor wafer.On the surface of wafer 1, (in Fig. 1, lower face side is surface) 1a is clathrate and is set with many and cuts apart preset lines, at each device area by cutting apart a plurality of rectangular shapes that preset lines marks off, is formed with respectively and has LSI(large scale integrated circuit) etc. the device 2 of electronic loop.About boundary belt 11, such as using the parts etc. that are formed with adhesion layer in the one side with flexible resin sheet as guard block 11, through adhesion layer, in the mode of the surperficial 1a of cover wafers 1, paste guard block 11.As guard block 11, can be also to use the hardboards such as silicon wafer or glass substrate, ceramic substrate, by bonding agent etc., paste the mode of wafer.
(2) back side grinding step
Next; as shown in Figure 2; making guard block 11 sides aim at holding tables 21 and keep wafer 1 by holding table 21, carry out the back side 1b of the wafer 1 that grinding exposes upward by grinding member 22, is predetermined thickness (for example 50～100 μ m left and right) thereby make wafer 1 thinning.
Holding table 21 is to be attracted the suction function producing and machined object absorption is remained to the general well-known negative pressure chuck table on the round-shaped level maintenance face being formed by porous material by air, utilizes not shown rotary drive mechanism that holding table 21 is pivoted.Grinding member 22 is such members: the end at the main shaft 23 that extends along vertical direction and rotarilyd actuate by not shown motor is fixed with Grinding wheel 25 through flange 24, and grinding member 22 is movably equipped on the top of holding table 21 up and down.At the lower surface peripheral part of Grinding wheel 25, arrange in the form of a ring and be fastened with a plurality of grinding tools 26.Grinding tool 26 uses the corresponding material of material with wafer 1, for example, uses by adhesives such as metal-to-metal adhesive or resin binders the diamond abrasive grain diamond abrasive tool that is shaped etc. of getting together.
In grinding step, make guard block 11 sides aim at maintenance face wafer 1 is loaded on holding table 21, by negative pressure chuck, adsorb and keep wafer 1.And self-sustaining workbench 21 rises grinding member 22 is declined to the state of a direction rotation at a predetermined velocity, the grinding tool of the Grinding wheel of rotation 25 26 is pressed into the back side 1b of wafer 1, thereby 1b whole face in the back side is carried out to grinding.
(3) modified layer forms step
Next, along cutting apart preset lines, irradiate the laser beam with respect to wafer 1 with radioparent wavelength, thereby form along the modified layer of cutting apart preset lines in the inside of wafer 1.As shown in Figure 3; formation about modified layer; make guard block 11 sides aim at the maintenance face of the holding table 31 of the negative-pressure card disc type that can rotate same with above-mentioned holding table 21, wafer 1 is loaded on holding table 31, by negative pressure chuck, adsorb and keep wafer 1.And, as shown in Figure 4, at focal point, be positioned under the state of inside of wafer 1, from being equipped on the irradiation portion 33 of Ear Mucosa Treated by He Ne Laser Irradiation member 32 of the top of holding table 31, back side 1b side from grinding, along cutting apart preset lines, irradiate the laser beam L with respect to wafer 1 with radioparent wavelength, thereby form modified layer 1c.
Holding table 31 can move at the directions X shown in Fig. 3 and Y-direction, for example, by making the processing feeding that holding table 31 moves at directions X carry out laser beam L for the scanning of wafer 1.In this situation, by the index feed that holding table 31 is moved in Y-direction, carry out the preset lines of cutting apart of Selective irradiation laser beam L.In addition, in order to make to cut apart preset lines for the state along directions X, make holding table 31 rotations.From the plane of illumination (back side 1b of wafer 1) of laser beam L, in the position of certain depth, with certain bed thickness, form modified layer 1c.Modified layer 1c has the low characteristic of other parts in strength ratio wafer 1, and after the second expansion step in become the starting point of cutting apart of wafer 1.
(4) paste step
Next, as shown in Figure 5, the adhesive sheet 12 larger than wafer 1 through diameter is equipped on the back side 1b side of wafer 1 in expansion bands 13.Expansion bands 13 is such as being the expansion bands that the one side that has a synthetic resin sheet etc. of retractility at polyvinyl chloride or polyolefin etc. is formed with adhesion layer, now, uses the expansion bands of the rectangular shape larger than wafer 1 or is wound as the expansion bands of drum.
Paste in step, by the adhesive sheet 12 rounded shapes that formed by DAF etc. set the adhesion layer side of expansion bands 13, next make the back side 1b side of wafer 1 aim at and paste in this adhesive sheet 12.In addition, also wafer 1 can be pasted in the expansion bands 13 that is equipped with in advance round-shaped adhesive sheet 12.Or, adhesive sheet 12 can also be pasted to the back side 1b of wafer 1, then this adhesive sheet 12 be pasted to the adhesion layer of expansion bands 13.Adhesive sheet 12 forms diameter than large round-shaped of wafer 1, becomes the state that has occurred the 12a of the portion that leans out of adhesive sheet 12 at the outer circumferential side of wafer 1.
(5) first expansion step
Next, at guard block 11, be equipped under the state of surperficial 1a of wafer 1 and expand expansion bands 13, and divide the 12a of the portion that leans out that the outer circumferential side to wafer 1 of adhesive sheet 12 leans out.
In the first expansion step, use the expanding unit 40 shown in Fig. 6 and Fig. 7.Expanding unit 40 has clamping part 41, and clamping part 41 is controlled respectively the ora terminalis on 13 4 limits of expansion bands and to the outside tractive with ora terminalis quadrature.Clamping part 41 is the structures that obtain of the cross section framework 42 that is L word shape of having take laterally zygomorphic combinations of states, in the inner side of each framework 42, is closely arranged with a plurality of rollers 43.These rollers 43 are supported on framework 42 in the mode that can rotate centered by the rotating shaft of long side direction that is orthogonal to framework 42.Expansion bands 13 is clamped between upper and lower roller 43, when expansion bands 13 under clamp position when direction along ora terminalis is extended, roller 43 follows this and rolls.
About the expansion of expansion bands 13, first, between the framework up and down 42 of the ora terminalis on four limits that makes expansion bands 13 through each clamping part 41 of expanding unit 40, make upper and lower framework 42 close to each other, by upper and lower roller 43, clamp expansion bands 13.Then, make clamping part 41 laterally (direction of arrow of Fig. 6 and Fig. 7) thus mobile expansion expansion bands 13.Because the roller 43 by clamping part 41 clamps, even produce unbalanced deformation due to expansion in expansion bands 13, by the rolling of roller 43, can discharge this deformation, can expand equably expansion bands 13.
As shown in Figure 8, by expanding like this expansion bands 13, only divide the 12a of the portion that leans out that the outer circumferential side to wafer 1 of adhesive sheet 12 leans out.Here, also do not cut apart wafer 1, expansion bands 13 is expanded to the degree that the 12a of portion is divided that leans out.
When division leans out the 12a of portion, if at least carry out the easily division of cooling words to leaning out the 12a of portion, therefore preferably.Such as directly or through the expansion bands 13 of rear side the cooling cooling fluids such as air being ejected into and leaning out the 12a of portion from face side, can coolingly lean out the 12a of portion thus.In addition, also can adopt such method: expanding unit 40 integral body are received in cooling chamber, thereby the atmosphere temperature in cooling chamber is set as to for example 0 ℃～-30 ℃ left and right, under the state of cooling integral body, expand.
When leaning out the 12a of portion and divided, from leaning out the 12a of portion, produce as shown in Figure 8 the chip 12b of adhesive sheet 12, even but these chips 12b disperses to wafer 1, and be to be also attached on guard block 11, above-mentioned guard block 11 sticks on the surperficial 1a of wafer 1.
(6) guard block is removed step
Next, as shown in Figure 9, remove the guard block 11 of the surperficial 1a that is provided in wafer 1.When the surface attachment of the guard block 11 of removing has division adhesive sheet 12, produce and chip 12b that disperse, adhesive sheet 12, the surperficial 1a that has removed the wafer 1 of guard block 11 is clean state.
(7) second expansion step
Next, as shown in figure 10, again by expanding unit 40, expand expansion bands 13.Thus, from cutting apart starting point, be that above-mentioned modified layer 1c is cut apart wafer 1 along cutting apart preset lines, and along cutting apart the preset lines adhesive sheet corresponding with device 2 12 that rupture, as shown in figure 11 wafer 1 monolithic is turned to the chip 3 with adhesive sheet 12 on surface with device 2.
(8) ring-shaped frame is pasted step
Next, having maintained under the state at the interval between the chip one by one 3 of cutting apart wafer 1 and forming, as shown in Figure 12 (a), ring-shaped frame 14 is pasted to the face side that is formed with adhesion layer of expansion bands 13.Ring-shaped frame 14 is such frameworks: in it week larger than the periphery of adhesive sheet 12, and there is the size that can be provided in clamping part 41 inner sides, the metallic plate that this ring-shaped frame 14 has rigidity by stainless steel etc. forms.Ring-shaped frame 14 be take and pasted expansion bands 13 with wafer 1 as concentric mode, cut apart thus wafer 1 and a plurality of chips 3 of forming for being accommodated in the state of the opening 14a of ring-shaped frame 14.
Then, as shown in Figure 12 (b), by cutting machine 50, cut off the adhesive portion of expansion bands 13 of the rear side of ring-shaped frame 14.Thus, from expanding unit 40, take out of the structure shown in Figure 13, said structure is in such state: a plurality of chips 3 with adhesive sheet 12 are pasted on the expansion bands 13 center that is pasted with ring-shaped frame 14 in periphery.By carrying out process chip 3 with ring-shaped frame 14, and transfer to subsequent processing (for example picking up the operation of picking up with the chip 3 of adhesive sheet 12 from expansion bands 13).
The action effect of (9) one execution modes
In the processing method of an execution mode as above, under the state of surperficial 1a that guard block 11 is set to wafer 1, complete the first expansion step, the 12a of the portion that the leans out outer circumferential side to wafer 1 of adhesive sheet 12 being leant out in this moment divides.And the chip 12b of the adhesive sheet 12 producing when division is attached on guard block 11.After having implemented the first expansion step, owing to removing the guard block 11 that is attached with chip 12b from wafer 1, so can prevent that chip 12b is attached to the surperficial 1a of wafer 1 completely.
In the present embodiment, having implemented the second expansion step, after wafer 1 is divided into a plurality of chips 3, under the state at the interval between the chip one by one 3 having maintained after cutting apart, ring-shaped frame 14 is pasted to expansion bands 13.Thus, expansion bands 13 remains on ring-shaped frame 14 with the state of having expanded, thereby maintains the interval between the chip one by one 3 after cutting apart.Therefore by ring-shaped frame 14 is processed, can not make chip 3 damages and carry out conveyance etc.
In addition; guard block 11 is to prevent that the chip 12b of adhesive sheet 12 is attached to the guard block of wafer surface; but before the processing of beginning is back side grinding step, guard block 11 is pasted to wafer surface; therefore; after grinding step overleaf; in the processing of carrying out, there is such advantage before removing guard block 11: by guard block 11 for example make holding table 21,31 not with the direct butt of surperficial 1a, guard block 11 can be applied flexibly as the guard block for the protection of device 2.
(10) other execution modes
Figure 14 has represented to use the appearance of expanding expansion bands 13 from above-mentioned different expanding unit 60.That is, by this expanding unit 60, also can carry out the first above-mentioned expansion step and the second expansion step.
At this moment expanding unit 60 is configured to: at workbench 61 cylindraceous around, be equipped with can lifting by air cylinder device 62 self-powered platform 63, place wafer 1 above-mentioned ring-shaped frame 14 being pasted in advance under adhesive sheet 12 is pasted with the state of expansion bands 13 of wafer 1.The inside of workbench 31 is equipped with to the nozzle 64 of expansion bands 13 ejection cooling fluids.
Expansion about wafer 1, first, as shown in Figure 14 (a), the height and position of self-powered platform 63 is set as identical with workbench 61, wafer in expansion bands 13 1 is loaded into the upper surface of workbench 61, ring-shaped frame 14 is loaded on self-powered platform 63.Next, by being arranged on the clamping device 65 of self-powered platform 63, ring-shaped frame 14 is fixed on to self-powered platform 63.
And, as shown in Figure 14 (b), by spraying cooling fluids from nozzle 64, make, the chilled state of adhesive sheet 12, to carry out the first following expansion step: dwindle air cylinder device 62, thus the 12a of the portion that leans out of division adhesive sheet 12.When self-powered platform 63 declines, expansion bands 13 is expanded laterally, thereby the 12a of the portion that leans out of adhesive sheet 12 is divided.
Next, from guard block 11 is removed on the surface of wafer 1, as shown in Figure 14 (c), carry out the second following expansion step: further make self-powered platform 63 decline and expand expansion bands 13, thereby wafer 1 is divided into chip 3.
By expanding unit 60, also can carry out the first expansion step and the second expansion step like this.Because the surperficial 1a at wafer 1 in the first expansion step is pasted with guard block 11, so the chip 12b of the 12a of the portion that leans out of the adhesive sheet 12 being produced by the first expansion step can not be attached to the surperficial 1a of wafer 1.
In addition, in the above-described embodiment, by the modified layer 1c forming based on irradiating laser light beam, formed the starting point of cutting apart forming along the cutting apart preset lines of wafer 1, but cut apart starting point, can be also for example the groove that is formed at the surperficial 1a side of wafer 1, this groove there are the cutting slot that formed by cutting tool or irradiates with respect to wafer 1 has the laser beam of absorbefacient wavelength and the laser processing groove that forms etc.
In addition, the order that starting point is cut apart in the back side grinding of wafer 1 and formation is arbitrarily, can be also contrary with above-mentioned execution mode, carries out the back side grinding of wafer 1 after starting point is cut apart in formation.
Claims (2)
1. a processing method, is on surface, to be equipped with guard block and along the processing method of cutting apart preset lines and be formed with the plate object of cutting apart starting point,
Above-mentioned processing method is characterised in that to have:
Paste step, the adhesive sheet larger than plate object through diameter sets plate object in expansion bands;
The first expansion step, after having implemented above-mentioned stickup step, is equipped under the surperficial state of plate object and expands above-mentioned expansion bands, thereby the above-mentioned adhesive sheet that the outer circumferential side of subtend plate object leans out divides at above-mentioned guard block;
Guard block is removed step, after having implemented above-mentioned the first expansion step, removes the above-mentioned guard block that is provided in plate object surface; And
The second expansion step, removes after step having implemented above-mentioned guard block, expands above-mentioned expansion bands, from the above-mentioned starting point of cutting apart, along the above-mentioned preset lines of cutting apart, cuts apart plate object, and along the above-mentioned preset lines fracture above-mentioned adhesive sheet corresponding with plate object of cutting apart.
2. processing method according to claim 1, is characterized in that,
Above-mentioned processing method has ring-shaped frame and pastes step, at this ring-shaped frame, paste in step, after having implemented above-mentioned the second expansion step, maintaining under the state at the interval between chip one by one of cutting apart plate object and forming, ring-shaped frame is pasted to above-mentioned expansion bands, form the mode that a plurality of said chip of cutting apart plate object and forming is accommodated in to the opening of above-mentioned ring-shaped frame.
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| JP2012206913A JP5977633B2 (en) | 2012-09-20 | 2012-09-20 | Processing method |
| JP2012-206913 | 2012-09-20 | ||
| JPJP2012-206913 | 2012-09-20 |
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| CN103681492A true CN103681492A (en) | 2014-03-26 |
| CN103681492B CN103681492B (en) | 2018-02-16 |
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| CN106024671A (en) * | 2015-03-25 | 2016-10-12 | 株式会社迪思科 | Extension apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6671794B2 (en) * | 2016-05-11 | 2020-03-25 | 株式会社ディスコ | Wafer processing method |
| JP6710457B2 (en) * | 2016-06-01 | 2020-06-17 | 株式会社ディスコ | Expanded sheet, method for manufacturing expanded sheet, and method for expanding expanded sheet |
| JP7216504B2 (en) * | 2018-09-03 | 2023-02-01 | 株式会社ディスコ | Expanding method |
| JP7345328B2 (en) | 2019-09-13 | 2023-09-15 | 株式会社ディスコ | Processing method of workpiece |
| JP7511981B2 (en) | 2020-08-05 | 2024-07-08 | 株式会社ディスコ | Method for manufacturing chip with adhesive film |
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| KR101966997B1 (en) | 2019-04-08 |
| JP5977633B2 (en) | 2016-08-24 |
| JP2014063812A (en) | 2014-04-10 |
| KR20140038305A (en) | 2014-03-28 |
| CN103681492B (en) | 2018-02-16 |
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