CN117020397A - Silicon carbide ingot stripping method based on space-time synchronous focusing laser - Google Patents
Silicon carbide ingot stripping method based on space-time synchronous focusing laser Download PDFInfo
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- CN117020397A CN117020397A CN202311218618.0A CN202311218618A CN117020397A CN 117020397 A CN117020397 A CN 117020397A CN 202311218618 A CN202311218618 A CN 202311218618A CN 117020397 A CN117020397 A CN 117020397A
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 48
- 230000001360 synchronised effect Effects 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 32
- 230000004048 modification Effects 0.000 claims abstract description 17
- 238000012986 modification Methods 0.000 claims abstract description 17
- 238000007493 shaping process Methods 0.000 claims abstract description 5
- 239000013078 crystal Substances 0.000 claims abstract description 4
- 230000000750 progressive effect Effects 0.000 claims description 4
- 238000001228 spectrum Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 8
- 235000012431 wafers Nutrition 0.000 description 20
- 238000000879 optical micrograph Methods 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000009022 nonlinear effect Effects 0.000 description 3
- 238000002679 ablation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
- B23K26/046—Automatically focusing the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
Abstract
The invention belongs to the technical field of silicon carbide ingot stripping, and particularly discloses a silicon carbide ingot stripping method based on space-time synchronous focusing laser, which comprises the following steps: s1, a pulse laser beam emitted by an ultrafast laser is incident to a pair of parallel gratings to obtain a spectrally separated shaping laser beam, and then space-time synchronous focusing is completed through an objective lens; s2, focusing a laser focus on a preset plane inside the silicon carbide crystal ingot to obtain a plurality of modification points distributed at intervals, and then scanning according to a preset path to obtain a modification layer formed by connecting the extension cracks with the modification points; and S3, applying external forces with opposite directions and vertical to the end faces to the two ends of the ingot to stretch, and stripping the wafer along the plane of the modified layer. The laser stripping method disclosed by the invention has the advantages that the focusing depth range of the laser light field in the ingot is minimized, the thickness of the modified layer and the roughness of the stripping surface are reduced, and meanwhile, the quality of the modified layer is improved, so that the total loss of single-piece materials is greatly reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor ingot stripping, in particular to a silicon carbide ingot stripping method based on space-time synchronous focusing laser.
Background
As a third-order wide bandgap semiconductor material, silicon carbide (SiC) has excellent thermal conductivity, electrical conductivity, and mechanical properties, and has great potential in the fields of integrated circuits, optoelectronic devices, power electronics, and the like. Currently, diamond wire saw stripping is the mainstream silicon carbide wafer stripping technology, but there are still a plurality of problems, such as 1) low efficiency, high hardness (Mohs hardness is as high as 9.5) of silicon carbide, difficult cutting and processing efficiency of about 45 minutes/piece; 2) The thickness of the processable wafer is large, silicon carbide has high brittleness, and the minimum wafer cutting thickness is about 450-500 mu m; 3) The material loss is large, and the notch loss is usually 150-180 mu m; 4) The surface roughness is large, and the wire saw causes a great deal of surface and subsurface damage to the wafer, which needs to be eliminated by post-treatments such as grinding, lapping and chemical mechanical lapping.
In recent years, laser processing has been widely used as an effective micromachining means. The laser lift-off technique utilizes a high energy laser beam to induce phase separation and defects inside a semiconductor ingot, forming a thin modified layer and extending the extended crack, which can then be used to effect wafer lift-off by mechanical, expansion, or thermal stress. Compared with the traditional processing method, the laser processing technology, in particular to ultra-fast laser processing, has the outstanding advantages of non-contact processing, small heat affected zone, almost no damage on the surface and the like. The diamond wire saw is replaced by ultra-fast laser, so that almost zero notch loss is realized, the material loss and the single-piece stripping time are greatly reduced, and meanwhile, the low-damage processing is more beneficial to sheet cutting. In addition, the post-treatment of the ultra-fast laser cutting silicon carbide only comprises fine grinding and chemical mechanical grinding, so that the processing loss is further reduced, and the processing efficiency is improved.
However, the current stripping technology based on the ultra-fast laser-induced internal modification either requires multi-step laser modification process or generates thicker modified layer, and in addition, aberration and nonlinear effects (laser filament forming, self-focusing, etc.) existing in the laser internal processing will cause the degradation of the focused light field, thereby damaging the quality of the modified layer and increasing the material loss of the wafer.
Disclosure of Invention
The invention aims to provide a silicon carbide ingot stripping method based on space-time synchronous focusing laser, which is characterized in that the space-time synchronous focusing method is to recombine the spectrum components separated in space at a focus through an objective lens to obtain the ultra-short pulse duration and the ultra-strong pulse energy density of initial laser, and the laser energy of a region far from a focal plane is rapidly reduced, so that the light field focusing depth range can be minimized to obtain the minimum modified layer thickness, and the wafer processing thickness deviation and the total loss of a single piece of material are reduced; in addition, the space-time focusing light spot mainly induces uniform formation and extension and expansion of cracks, which is beneficial to improving the efficiency and stability of silicon carbide wafer stripping.
In order to achieve the above purpose, the invention provides a silicon carbide ingot stripping method based on space-time synchronous focusing laser, which adopts the following technical scheme:
a silicon carbide ingot stripping method based on space-time synchronous focusing laser comprises the following steps:
s1, a pulse laser beam emitted by an ultrafast laser is incident to a pair of parallel gratings to obtain a spectrally separated shaping laser beam, and space-time synchronous focusing is completed through an objective lens;
s2, focusing a laser focus on a preset plane inside the silicon carbide crystal ingot to obtain a plurality of modification points distributed at intervals, and scanning according to a preset path to obtain a modification layer formed by connecting the extension cracks with the modification points;
and S3, applying external forces with opposite directions and perpendicular to the end faces to the two ends of the ingot to stretch, and stripping the wafer along the plane of the modified layer.
Further, the wavelength of the pulse laser beam is 800-1030nm, the pulse width is 100-1000fs, and the repetition frequency is 1-10KHz.
Further, the method for performing space-time synchronous focusing by using the objective lens to perform space-time synchronous focusing by using the laser beam emitted by the ultrafast laser to enter a pair of parallel gratings to obtain the spectrally separated shaped laser beam specifically includes:
the pulse laser beam emitted by the ultrafast laser is incident to a group of parallel grating pairs after energy adjustment and diaphragm elements, the obtained spectrum components are spatially separated, and then the first-order diffraction light is focused by an objective lens and recombined at a focus to obtain the ultrashort pulse duration and the ultrashort pulse energy density of the initial laser.
Further, the energy adjusting and diaphragm element is used for adjusting the energy and the size of the laser spot.
Further, the number of lines of the parallel grating pairs is 600-1800 lines/mm.
Further, the parallel grating pairs are replaced by a single grating.
Further, the preset plane is a laser focusing plane, the distance from the laser focusing plane to the upper end face is the thickness of a preliminary processing wafer, and the thickness of the preliminary processing wafer is 100-500 mu m.
Further, the preset path scanning is progressive scanning, concentric circle scanning or spiral scanning.
The beneficial effects of the invention are as follows: silicon carbide belongs to a wide-bandgap semiconductor, and the action mechanism of near-infrared femtosecond laser induced silicon carbide ingot internal modification is a multiphoton absorption effect, which is closely related to the energy density of focused field laser. For traditional space focusing, nonlinear effects such as self focusing, laser wire forming and the like seriously influence focusing quality, and further damage the precision and quality of a laser-induced modification region. The space-time synchronous focusing method of the invention is to focus the spectrum components separated in space at the focus by an objective lens to obtain the ultra-short pulse duration and the ultra-strong pulse energy density of the initial laser. Therefore, the space-time synchronous focusing method effectively inhibits nonlinear effects before and after a focusing field, and simultaneously limits laser-silicon carbide interaction to a range near a focal plane, so that the thickness of a laser-induced silicon carbide wafer modified layer is minimized, thereby reducing the deviation of the thickness of the wafer and the total loss of single-chip materials and increasing the output of unit wafers; the space-time focusing light spot mainly induces uniform formation and extension and expansion of cracks, and is beneficial to improving the efficiency and stability of silicon carbide wafer stripping.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below. Like elements or portions are generally identified by like reference numerals throughout the several figures. In the drawings, elements or portions thereof are not necessarily drawn to scale.
FIG. 1 is a schematic diagram of an apparatus for space-time shaping a femtosecond laser stripped silicon carbide wafer of the present invention.
Fig. 2 is a schematic diagram of a space-time shaping femtosecond laser stripped silicon carbide wafer.
FIG. 3 is a simulated focal light field intensity plot for conventional spatial focusing.
FIG. 4 is a simulated focus light field intensity plot for spatiotemporal synchronous focusing.
Fig. 5 shows a predetermined scan path including progressive scan, concentric scan, or spiral scan.
Fig. 6 is an optical microscope image of a silicon carbide surface processed by a time-space synchronous focusing method.
Fig. 7 is an optical microscope image of the interior of silicon carbide processed by the time-space synchronous focusing method.
Fig. 8 is an optical microscope image of the surface topography after processing silicon carbide and exfoliation by a time-space synchronous focusing method.
Fig. 9 is an optical microscope image of a conventional focusing method for processing a silicon carbide surface.
Wherein:
1. near infrared femtosecond laser; 2. an energy adjusting unit; 3. a diaphragm; 4. a reflecting mirror; 5. a parallel grating pair; 6. a beam splitter; 7. an objective lens; 8. a silicon carbide ingot; 9. an XYZ three-axis displacement table; 10. a beam splitter; 11. a CCD; 12. white light source LED.
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention. It should be noted that the following embodiments and features in the embodiments may be combined with each other without conflict.
The following describes in further detail the embodiments of the present invention with reference to the drawings and examples.
The embodiment of the invention provides a device for stripping a silicon carbide wafer by space-time synchronous focusing femtosecond laser, which is shown in fig. 1, and comprises a near infrared femtosecond laser 1, an energy adjusting unit 2 (a neutral attenuation sheet or a combination of a half wave plate and a polaroid), a diaphragm 3, a reflecting mirror 4, a parallel grating pair 5, a beam splitter 6, an objective lens 7, a silicon carbide crystal ingot 8 and an XYZ triaxial displacement table 9 from the beam propagation direction, wherein an observation unit part comprises a beam splitter 10, a CCD11 and a white light source LED12. Setting the wavelength of near infrared femtosecond laser to 800nm, the pulse width to 100fs, the repetition frequency to 1kHz, the scanning speed to 200 mu m/s and the scanning interval to 30 mu m; the diaphragm 3 is used for adjusting the laser spot size to ensure that all the light expanded by the grating can pass through the objective lens; the number of lines of the parallel grating pair 5 is 800line/mm; the objective lens 7 adopts a 50-time near infrared objective lens, and the numerical aperture is 0.50; the repeated positioning accuracy of the XYZ three-axis displacement stage 9 was 1 μm.
Based on the device shown in fig. 1, the embodiment of the invention provides a silicon carbide ingot stripping method based on space-time synchronous focusing laser, which specifically comprises the following steps:
in step S1, the pulsed laser beam emitted by the femto-second laser is subjected to energy adjustment and aperture beam shrinking, and then is incident into a group of parallel grating pairs, the spectral components of the pulsed laser beam are spatially separated, and then the first-order diffracted light is focused by an objective lens and recombined at a focus to obtain the ultra-short pulse duration and the ultra-strong pulse energy density of the initial laser, as shown in fig. 2.
And S2, focusing laser on the upper surface of the silicon carbide ingot, leveling to ensure that the laser always vertically enters the silicon carbide surface, moving a displacement table upwards by a preset depth, focusing the laser focus on a preset plane inside the silicon carbide ingot, processing to obtain a plurality of modification points distributed at intervals, and scanning according to a preset path to obtain a modification layer formed by connecting the extension cracks with the modification points.
And S3, applying external forces with opposite directions and vertical to the end faces to the two ends of the ingot to stretch, and stripping the wafer along the plane of the modified layer.
As shown in fig. 3-4, which are simulated focal light field intensity diagrams of conventional spatial focusing and spatiotemporal synchronous focusing, respectively, it can be seen that the focal depth range of the spatiotemporal synchronous focusing method (fig. 4) is significantly reduced in the laser propagation direction (axial direction) relative to the conventional focusing method (fig. 3) because the overlapping of the spatial focusing of light of different frequency components occurs only around the focal point, resulting in the shortest region pulse duration and thus the highest peak intensity. Furthermore, the thickness of the laser-induced modified layer can be greatly reduced, thereby reducing the material loss due to the removal of the laser-modified region.
As shown in fig. 5, 3 preset laser scanning paths are respectively progressive scanning, concentric scanning or spiral scanning. The above 3 scanning paths are initially adopted, wherein the spiral line scanning can obtain the highest processing efficiency because unnecessary idle strokes are avoided. The laser was focused 100 μm below the silicon carbide surface.
Optical microscopy images of the surface and interior of silicon carbide processed by the time-space synchronous focusing method are shown in fig. 6-7. Under the condition that the scanning interval is 30 mu m and the focusing depth is 100 mu m, the upper surface of the silicon carbide can be seen to have no ablation damage phenomenon, which shows that the method can effectively inhibit the laser from processing a non-focus area; meanwhile, the extended and expanded cracks among the laser-induced modified points are uniformly distributed, so that the external force required for stripping the silicon carbide wafer is greatly reduced (figures 7-8). In contrast, under the same processing conditions, there is damage to the silicon carbide surface processed by conventional focusing methods (FIG. 9) because the laser energy is still above the silicon carbide ablation threshold at a distance above and below the focal plane.
The above embodiments are only for illustrating the present invention, not for limiting the present invention, and various changes and modifications may be made by one of ordinary skill in the relevant art without departing from the spirit and scope of the present invention, and therefore, all equivalent technical solutions are also within the scope of the present invention, and the scope of the present invention is defined by the claims.
Claims (8)
1. A silicon carbide ingot stripping method based on space-time synchronous focusing laser is characterized by comprising the following steps:
s1, a pulse laser beam emitted by an ultrafast laser is incident to a pair of parallel gratings to obtain a spectrally separated shaping laser beam, and space-time synchronous focusing is completed through an objective lens;
s2, focusing a laser focus on a preset plane inside the silicon carbide crystal ingot to obtain a plurality of modification points distributed at intervals, and scanning according to a preset path to obtain a modification layer formed by connecting the extension cracks with the modification points;
and S3, applying external forces with opposite directions and perpendicular to the end faces to the two ends of the ingot to stretch, and stripping the wafer along the plane of the modified layer.
2. The method for slicing silicon carbide ingot based on space-time synchronous focused laser according to claim 1, wherein the pulse laser beam has a wavelength of 800-1030nm, a pulse width of 100-1000fs, and a repetition rate of 1-10KHz.
3. The method for slicing silicon carbide ingot based on space-time synchronous focusing laser according to claim 1, wherein the step of making the pulse laser beam emitted by the ultrafast laser incident on a pair of parallel gratings to obtain spectrally separated shaped laser beams and performing space-time synchronous focusing by an objective lens comprises:
the pulse laser beam emitted by the ultrafast laser is incident to a group of parallel grating pairs after energy adjustment and diaphragm elements, the obtained spectrum components are spatially separated, and then the first-order diffraction light is focused by an objective lens and recombined at a focus to obtain the ultrashort pulse duration and the ultrashort pulse energy density of the initial laser.
4. A silicon carbide ingot stripping method based on space-time synchronous focused laser according to claim 3, wherein the energy adjusting and diaphragm element is used for adjusting the energy and size of the laser spot.
5. A silicon carbide ingot stripping method based on space-time synchronous focused laser according to claim 3, wherein the number of lines of the parallel grating pair is 600-1800 lines/mm.
6. A silicon carbide ingot stripping method based on spatially and temporally synchronous focused laser according to claim 3, wherein the parallel grating pairs are replaced by single gratings.
7. The method for slicing silicon carbide ingot based on space-time synchronous focusing laser according to claim 1, wherein the preset plane is a laser focusing plane, the distance from the laser focusing plane to the upper end face is the thickness of a preliminary processing wafer, and the thickness of the preliminary processing wafer is 100-500 μm.
8. The method for slicing silicon carbide ingot based on space-time synchronous focused laser according to claim 1, wherein the preset path scan is a progressive scan, a concentric circle scan or a spiral scan.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014063813A (en) * | 2012-09-20 | 2014-04-10 | Disco Abrasive Syst Ltd | Processing method |
| CN106548981A (en) * | 2016-09-30 | 2017-03-29 | 大族激光科技产业集团股份有限公司 | The laser processing of silicon wafer |
| CN108145307A (en) * | 2016-12-02 | 2018-06-12 | 株式会社迪思科 | The generation method of SiC wafer |
| CN111992903A (en) * | 2020-08-24 | 2020-11-27 | 松山湖材料实验室 | Method for synchronously peeling wafer by laser |
| CN115279539A (en) * | 2022-06-24 | 2022-11-01 | 深圳优普莱等离子体技术有限公司 | Laser cutting system |
| CN115555735A (en) * | 2022-10-26 | 2023-01-03 | 中国科学院微电子研究所 | Laser stripping method and device for silicon carbide crystal ingot |
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2023
- 2023-09-20 CN CN202311218618.0A patent/CN117020397A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014063813A (en) * | 2012-09-20 | 2014-04-10 | Disco Abrasive Syst Ltd | Processing method |
| CN106548981A (en) * | 2016-09-30 | 2017-03-29 | 大族激光科技产业集团股份有限公司 | The laser processing of silicon wafer |
| CN108145307A (en) * | 2016-12-02 | 2018-06-12 | 株式会社迪思科 | The generation method of SiC wafer |
| CN111992903A (en) * | 2020-08-24 | 2020-11-27 | 松山湖材料实验室 | Method for synchronously peeling wafer by laser |
| CN115279539A (en) * | 2022-06-24 | 2022-11-01 | 深圳优普莱等离子体技术有限公司 | Laser cutting system |
| CN115555735A (en) * | 2022-10-26 | 2023-01-03 | 中国科学院微电子研究所 | Laser stripping method and device for silicon carbide crystal ingot |
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