CN101041415B - Method for making nano hole on silicon chip - Google Patents

Method for making nano hole on silicon chip Download PDF

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Publication number
CN101041415B
CN101041415B CN 200610097417 CN200610097417A CN101041415B CN 101041415 B CN101041415 B CN 101041415B CN 200610097417 CN200610097417 CN 200610097417 CN 200610097417 A CN200610097417 A CN 200610097417A CN 101041415 B CN101041415 B CN 101041415B
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wafer
tip
sample
silicon
silicon wafer
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CN 200610097417
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Chinese (zh)
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CN101041415A (en )
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王海涛
田田
肖忠党
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东南大学
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Abstract

The invention relates to a preparing method for nanometer pore on silicon wafer directly by alternating tip electric field, which is simple and easy operation. At first, silicon single wafer or silicon wafer with modified hydrophobic or hydrophilic single layer on the surface by chemical bonding or physical absorption is fixed on the sample stage; then a program is started to control the distancebetween the tip and the sample and the relative motion; AC voltage pulse is sent between said sample and the tip to form the nanometer pore on said sample. Not only it is provided with simple equipment and convenience operation but also diameter and depth of nanometer pore can be controlled accurately and easily. It can be applied in information storage field and nano-electronic device preparation so on.

Description

硅片上制作纳米孔的方法 The method of making the silicon nanopore

技术领域 FIELD

[0001] 本发明涉及的是一种利用交变针尖电场在硅片上直接制作纳米孔的方法,属于纳米器件制造及信息存储技术领域。 [0001] The present invention relates to a method of using a cross-tip field produced nanopores becomes directly on a silicon wafer, and manufacturing a nanodevice belonging information storage technology.

背景技术 Background technique

[0002] 硅片上的纳米孔有多种用途,可以直接用作二维光子晶体;用作特殊纳米结构的生长模板;可用于固定纳米颗粒形成各种二维或者三维图案,同自组装相比可以精确控制纳米颗粒的位置;可用于固定生物大分子等探针分子,制作生物芯片;也可用作微纳反应器,研究单分子反应等。 [0002] nanoporous silicon on a variety of purposes, may be directly used as a two-dimensional photonic crystal; particular as a growth template nanostructures; nanoparticles can be formed for fixing various two- or three-dimensional pattern, with the self-assembly phase ratio can be precisely controlled location of the nanoparticles; and the like can be used for fixing the probe molecules of biological macromolecules, the biochip production; micro-nano reactors can also be used to study single-molecule reactions. 利用针尖电场诱导在硅片上局域氧化形成二氧化硅量子点,然后用腐蚀剂氢氟酸、氢氧化钠或者四甲基氢氧化铵溶液进行腐蚀,在硅片上可以制备纳米孔。 Local oxidation tip using an electric field induced in the silicon quantum dots are formed of silica, then with an etchant of hydrofluoric acid, sodium hydroxide or tetramethylammonium hydroxide etching solution can be prepared on a silicon wafer nanopore. 但这种方法步骤繁琐,腐蚀过程中会出现扩孔现象,且很难得到较深的纳米孔。 However, this method has complicated steps that occur during the reaming corrosion phenomenon, and it is difficult to get deep nanopores. 目前直接在硅片上形成纳米孔的方法主要是聚焦粒子束(FIB)和电子束曝光(ELB),这两种方法可以对纳米孔的孔径、深度以及角度进行精确的控制。 Current methods nanopores formed directly on a silicon wafer is mainly focused ion beam (FIB) and electron beam lithography (the ELB), these two methods allows for precise control of the nanopore aperture, depth, and angle. 但这两种方法的缺点是设备本身价格非常昂贵,加工过程也非常耗时,不利于推广应用。 But the disadvantage of both methods is the device itself is very expensive, the process is very time consuming, is not conducive to the promotion application.

发明内容 SUMMARY

[0003] 技术问题:本发明的目的是提供一种利用针尖交变电场在硅片上制备纳米孔的方法,纳米孔的孔径、深度可控,可用于纳米加工制造以及信息存储领域。 [0003] Technical Problem: The purpose of the present invention is to provide a method for preparing nano needle holes alternating electric field on a silicon wafer using a pore size of nanopores, controllable depth, and can be used for manufacturing nano-information storage field.

[0004] 技术方案:本发明硅片上制备纳米孔的方法为: [0004] The technical solution: A method of preparing a silicon nanopore present invention are:

[0005] 对硅片进行平整度和疏水、亲水处理,形成大面积平整样品表面。 [0005] silicon wafers smoothness and hydrophobic, hydrophilic treatment to form a flat surface of a large sample area. 将硅片固定在样品台上,控制硅片与针尖的距离以及针尖在硅片表面的位置,在所述硅片样品和针尖之间施加脉冲电压,在所述硅片样品上形成纳米孔。 The wafer was fixed to a sample stand, control the distance the needle tip and the needle tip wafer location of the wafer surface, applying a pulse voltage between the tip and the sample wafer is formed on the silicon nanopore sample.

[0006] 所述的硅片样品为未经修饰的η型、或ρ型硅片,或者表面通过化学键合或物理吸附修饰亲水或者疏水单分子膜的η型、或ρ型硅片;所用硅片,其晶面取向为111,100, 110,911。 [0006] The wafer sample is unmodified type η, ρ or type silicon wafer surface by chemical bonding or physical adsorption or modified η hydrophilic or hydrophobic monomolecular film, or ρ-type silicon; used wafers, which plane is oriented 111,100, 110,911. 所述的针尖为金属针尖,或表面蒸镀钼、或钼铱合金、或钼铑合金、或金的导电半导体硅针尖。 The tip of the needle is a metal, deposited on the surface, or molybdenum, or a molybdenum alloy, iridium, rhodium or molybdenum alloy, or gold conductive semiconductor silicon tip. 所施加的电压是交流脉冲,其频率在1赫兹到1. 0 X IO8赫兹,脉冲电压幅值为5-100伏特,脉冲作用时间为0. 1微秒到10秒。 The applied voltage is an AC pulse having a frequency of 1 Hz to 1. 0 X IO8 Hz, the amplitude of the pulse voltage is 5-100 volts, the pulse time was 0.1 microseconds to 10 seconds. 所述的硅片与针尖的距离为0〜5微米。 The distance the needle tip is silicon 0~5 microns.

[0007] 实施效果:本发明利用针尖交变电场直接在硅片基底上制备纳米孔,具有以下优点:第一、直接在硅片上制备纳米孔,同先对硅片进行局域氧化,然后再用氢氟酸、氢氧化钠等腐蚀剂腐蚀的化学湿法方法相比,步骤简单,易于实现对孔径和孔深的控制。 [0007] Advantages: The present invention was prepared using an alternating electric field needle nanopores directly on a silicon wafer substrate, has the following advantages: First, nano holes directly prepared on a silicon wafer, with the first local oxidation of silicon wafers, and hydrofluoric acid, and then compared with wet chemical methods, the etchant such as sodium hydroxide, step simple and easy to achieve control of the pore size and depth. 第二、纳米孔的孔径和孔深,可以通过调节操作环境湿度,脉冲电压的强度,脉冲持续时间,所使用脉冲电压的频率来实现。 Second, the pore size and depth of the nanopores can be achieved by adjusting operating environment humidity, intensity of the pulse voltage, pulse duration, pulse frequency voltage. 第三、本发明操作方便简单,比聚焦粒子束和电子束曝光省时,易于同其他微电子加工方式相结合。 Third, the present invention is simple and easy to operate, than a focused particle beam and electron beam exposure province, easily combined with other microelectronic processing methods. 第四,所用到的材料是硅片或者经过过表面修饰的硅片。 Fourth, the material used is silicon wafer or silicon wafer after surface modification through. 硅在室温的化学性质很稳定,且现在的硅片加工工艺,很容易制备大尺寸平整度在纳米级水平的硅片,使得该方法有望用于信息存储技术。 Silicon is very stable chemical properties at room temperature, and the current wafer processing technology, it is easy to prepare a large-sized wafer flatness at the nanoscale level, such that the process technology for storage of information is expected. 附图说明 BRIEF DESCRIPTION

[0008] 图1是本发明原理示意图。 [0008] FIG. 1 is a schematic view of the principles of the present invention. 其中有:针尖1、硅片2、、电场3、电源4。 Including: tip 1, 2 ,, silicon field 3, power source 4.

[0009] 图2是本发明实施一例在未经修饰的(111)硅片上制作纳米孔。 [0009] FIG. 2 is an embodiment of the present invention, one case made in the nanopore unmodified (111) silicon wafer. 其中,图2(a)是硅(111)单晶晶面的原子力显微镜形貌相;图2(b)是所示是在针尖和样品之间施加20V频率为IOKHz的2s的脉冲后,形成的纳米孔洞。 Wherein FIG. 2 (a) is a silicon (111) single crystal surface of an atomic force microscope morphology of phase; FIG. 2 (b) is a frequency of 20V is applied after the pulse IOKHz 2s between tip and sample is formed as shown in nano-holes.

具体实施方式 detailed description

[0010] 本发明应用交变针尖电场在硅片上制作纳米孔的原理如图1所示,通过外接电源4产生交流脉冲,使针尖1和硅片2之间产生局域强电场3,诱导硅片2发生局域热化学分解反应,形成纳米尺度的孔洞。 [0010] The principle of making the nanopore on a silicon wafer applied alternating electric field according to the present invention, the needle tip shown in Figure 1, the AC pulse is generated by an external power supply 4, so that the needle 1 and the local strong electric field is generated between the wafer 23, induced local wafer 2 thermochemical decomposition reaction occurs to form nanoscale pores.

[0011] 本发明制作硅纳米孔的方法,按如下步骤进行:将硅单晶片或者表面通过化学键合或物理吸附修饰疏水或者亲水自组装单层膜的硅片,固定在样品台上,控制硅片样品与针尖之间距离及针尖在硅片表面的位置,在上述样品和所述针尖之间施加电压脉冲,即可在上述样品上形成纳米尺度的孔洞。 [0011] The method of making silicon nanopore present invention, carried out as follows: a silicon single crystal wafer or the surface-modified hydrophobic by chemical bonding or physical adsorption on hydrophilic silicon or self-assembled monolayer, and fixing the sample stage control and the position of the tip from the surface of the silicon wafer, applying a voltage pulse between the sample and the tip between the tip and the sample wafer, nanoscale pores can be formed on said sample. 其中,针尖可以是金属针尖,或表面蒸镀钼、钼铱合金、 金的半导体硅针尖;所述电压脉冲为交流脉冲,其频率在1赫兹到1. OX IO8赫兹,脉冲电压幅值为5-100伏特,脉冲作用时间为0. 1微秒到10秒。 Wherein the needle tip may be of metal, or deposited on the surface of molybdenum, a molybdenum alloy, iridium, gold tip of semiconductor silicon; the AC pulse voltage is a pulse having a frequency of 1 Hz to 1. OX IO8 Hz, a pulse voltage amplitude of 5 -100 volts, pulsed time of 0.1 microseconds to 10 seconds. 所用硅片为未经修饰的η型、或P型硅片,或者表面通过化学键合或物理吸附修饰亲水或者疏水单分子膜的η型、或ρ型硅片; 所用硅片,其晶面取向为111,100,110,911。 The η is unmodified type or P-type silicon wafer surface by chemical bonding or physical adsorption or modified η-type, or a hydrophilic or hydrophobic ρ-type silicon monomolecular film with silicon; the silicon wafer, the planes oriented 111,100,110,911.

[0012] 实施例1 :以原子力显微镜针尖在未经修饰的硅片(111)上制作纳米孔为例说明本发明所述的纳米孔制备过程: [0012] Example 1: In AFM tip on unmodified silicon (111) Production Example illustrates the preparation of nanoporous nanopores process according to the present invention:

[0013] 图2 (a)是硅(111)单晶晶面的原子力显微镜形貌相。 [0013] FIG. 2 (a) is a silicon (111) single crystal surface of an atomic force microscope morphology phase. 将硅(111)单晶样品用导电胶固定在原子力显微镜(如Molecular Imaging,USA)仪器的样品台上,所用针尖为商品原子力显微镜钼针尖。 The Si (111) single crystal sample with a conductive glue AFM sample stage (e.g., Molecular Imaging, USA) instrument, the tip of the microscope molybdenum with an atomic force tip goods. 使用原子力显微镜本身所含的刻写模块,在硅(111)单晶面与原子力显微镜针尖之间施加20V频率为IOKHz的2s的脉冲后,形成的纳米孔洞:孔径约为200nm, 孔的深度为4nm。 After using the writing module itself contains an atomic force microscope, the frequency of 20V is applied between the silicon (111) single crystal surface of the AFM tip is 2s pulse IOKHz of nano holes formed: pore size of about 200 nm, depth of the hole is 4nm . ,然后通过原子力显微镜成像确认是否形成纳米孔。 And forming by atomic force microscopy to confirm whether the formation of a nanopore. 如图2(b)所示。 As shown in FIG 2 (b) shown in FIG.

Claims (1)

  1. 一种在硅片上制备纳米孔的方法,其特征在于制备的方法为:将硅片固定在样品台上,控制硅片与针尖的距离以及针尖在硅片表面的位置,在所述硅片样品和针尖之间施加脉冲电压,在所述硅片样品上形成纳米孔;所述的硅片样品为未经修饰的n型、或p型硅片,或者表面通过化学键合或物理吸附修饰亲水或者疏水单分子膜的n型、或p型硅片;所用硅片,其晶面取向为111;所述的针尖为铂针尖,所施加的电压是交流脉冲,其频率为10K赫兹,脉冲电压幅值为20伏特,脉冲作用时间为2秒。 A method of preparing a nano holes on a silicon wafer, which is prepared by a method wherein: the sample stage is fixed to the wafer, the wafer and controlling the distance the needle tip and the tip position of the wafer surface, the wafer applying a pulse voltage between the sample and the tip is formed on the silicon nanopore sample; the sample is a wafer unmodified n-type or p-type silicon wafer, surface adsorption or by chemical bonding or physical modification affinity the n-type water or hydrophobic monomolecular film, or a p-type silicon; the silicon wafer, which is a 111 crystal plane orientation; platinum tip of the tip, the applied voltage is an alternating pulse, a frequency of 10K Hz pulse voltage amplitude of 20 volts, pulsed time of 2 seconds.
CN 200610097417 2006-11-07 2006-11-07 Method for making nano hole on silicon chip CN101041415B (en)

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CN103594334A (en) * 2013-11-21 2014-02-19 中国科学院半导体研究所 MBE method for growing locating quantum dots on patterned substrate through AFM nanoimprinting
CN104034296A (en) * 2014-06-30 2014-09-10 西南交通大学 Detection method for thickness of monocrystalline silicon surface scratch damaged layer
CN104711678B (en) * 2015-02-04 2017-07-04 杭州电子科技大学 A method for the preparation of nanostructured material of silicon under alternating electric field

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