JP2004525056A5 - - Google Patents

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JP2004525056A5
JP2004525056A5 JP2002562804A JP2002562804A JP2004525056A5 JP 2004525056 A5 JP2004525056 A5 JP 2004525056A5 JP 2002562804 A JP2002562804 A JP 2002562804A JP 2002562804 A JP2002562804 A JP 2002562804A JP 2004525056 A5 JP2004525056 A5 JP 2004525056A5
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Japan
Prior art keywords
wafer carrier
spindle
wafer
reactor
carrier
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JP2002562804A
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Japanese (ja)
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JP2004525056A (ja
JP4159360B2 (ja
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Priority claimed from US09/778,265 external-priority patent/US6506252B2/en
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Publication of JP4159360B2 publication Critical patent/JP4159360B2/ja
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JP2002562804A 2001-02-07 2001-08-21 Ｃｖｄリアクタ用ウェハ・キャリヤ Expired - Fee Related JP4159360B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/778,265 US6506252B2 (en) 2001-02-07 2001-02-07 Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
PCT/US2001/026067 WO2002063074A1 (en) 2001-02-07 2001-08-21 Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition

Related Child Applications (1)

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JP2008119989A Division JP5004864B2 (ja) 2001-02-07 2008-05-01 化学蒸着によりウェハ上にエピタキシャル層を成長させる装置および方法

Publications (3)

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JP2004525056A JP2004525056A (ja) 2004-08-19
JP2004525056A5 true JP2004525056A5 (https=) 2008-06-26
JP4159360B2 JP4159360B2 (ja) 2008-10-01

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JP2002562804A Expired - Fee Related JP4159360B2 (ja) 2001-02-07 2001-08-21 Ｃｖｄリアクタ用ウェハ・キャリヤ
JP2008119989A Expired - Fee Related JP5004864B2 (ja) 2001-02-07 2008-05-01 化学蒸着によりウェハ上にエピタキシャル層を成長させる装置および方法

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JP2008119989A Expired - Fee Related JP5004864B2 (ja) 2001-02-07 2008-05-01 化学蒸着によりウェハ上にエピタキシャル層を成長させる装置および方法

Country Status (6)

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US (3) US6506252B2 (https=)
EP (1) EP1358368B1 (https=)
JP (2) JP4159360B2 (https=)
KR (1) KR100812469B1 (https=)
CN (1) CN1238576C (https=)
WO (1) WO2002063074A1 (https=)

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