JP2004512693A - 半導体ウェハの洗浄方法およびその装置 - Google Patents

半導体ウェハの洗浄方法およびその装置 Download PDF

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Publication number
JP2004512693A
JP2004512693A JP2002538478A JP2002538478A JP2004512693A JP 2004512693 A JP2004512693 A JP 2004512693A JP 2002538478 A JP2002538478 A JP 2002538478A JP 2002538478 A JP2002538478 A JP 2002538478A JP 2004512693 A JP2004512693 A JP 2004512693A
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JP
Japan
Prior art keywords
semiconductor wafer
cleaning
chemical mechanical
mechanical polishing
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002538478A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004512693A5 (https=
Inventor
ボンスドルフ，グリット
ディッケンシャイド，ヴォルフガング
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of JP2004512693A publication Critical patent/JP2004512693A/ja
Publication of JP2004512693A5 publication Critical patent/JP2004512693A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/237—Cleaning during device manufacture during, before or after processing of insulating materials the processing being a planarisation of insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/277—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a planarisation of conductive layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2002538478A 2000-10-25 2001-10-08 半導体ウェハの洗浄方法およびその装置 Pending JP2004512693A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10052762A DE10052762A1 (de) 2000-10-25 2000-10-25 Verfahren und Vorrichtung zum Reinigen einer Halbleiterscheibe
PCT/EP2001/011582 WO2002035598A1 (de) 2000-10-25 2001-10-08 Verfahren und vorrichtung zum reinigen einer halbleiterscheibe

Publications (2)

Publication Number Publication Date
JP2004512693A true JP2004512693A (ja) 2004-04-22
JP2004512693A5 JP2004512693A5 (https=) 2005-04-28

Family

ID=7660932

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002538478A Pending JP2004512693A (ja) 2000-10-25 2001-10-08 半導体ウェハの洗浄方法およびその装置

Country Status (6)

Country Link
US (1) US6833324B2 (https=)
EP (1) EP1328968A1 (https=)
JP (1) JP2004512693A (https=)
KR (1) KR100543928B1 (https=)
DE (1) DE10052762A1 (https=)
WO (1) WO2002035598A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6881675B2 (en) * 2002-05-15 2005-04-19 Taiwan Semiconductor Manufacturing Co, Ltd. Method and system for reducing wafer edge tungsten residue utilizing a spin etch
KR100604051B1 (ko) * 2004-06-30 2006-07-24 동부일렉트로닉스 주식회사 게이트 산화막의 전세정방법
KR100644054B1 (ko) * 2004-12-29 2006-11-10 동부일렉트로닉스 주식회사 세정 장치 및 게이트 산화막의 전세정 방법
KR100829376B1 (ko) * 2006-12-20 2008-05-13 동부일렉트로닉스 주식회사 반도체 소자의 세정방법
US20080289660A1 (en) * 2007-05-23 2008-11-27 Air Products And Chemicals, Inc. Semiconductor Manufacture Employing Isopropanol Drying
CN101217108B (zh) * 2008-01-02 2010-06-09 株洲南车时代电气股份有限公司 一种芯片台面腐蚀装置
EP4152393A4 (en) * 2021-08-04 2024-01-03 Changxin Memory Technologies, Inc. SEMICONDUCTOR STRUCTURE AND ITS FORMATION METHOD

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT389959B (de) * 1987-11-09 1990-02-26 Sez Semiconduct Equip Zubehoer Vorrichtung zum aetzen von scheibenfoermigen gegenstaenden, insbesondere von siliziumscheiben
US5442828A (en) * 1992-11-30 1995-08-22 Ontrak Systems, Inc. Double-sided wafer scrubber with a wet submersing silicon wafer indexer
JP3326642B2 (ja) * 1993-11-09 2002-09-24 ソニー株式会社 基板の研磨後処理方法およびこれに用いる研磨装置
US5996594A (en) * 1994-11-30 1999-12-07 Texas Instruments Incorporated Post-chemical mechanical planarization clean-up process using post-polish scrubbing
TW386235B (en) * 1995-05-23 2000-04-01 Tokyo Electron Ltd Method for spin rinsing
JPH09270412A (ja) * 1996-04-01 1997-10-14 Canon Inc 洗浄装置及び洗浄方法
EP0805000A1 (en) * 1996-05-02 1997-11-05 MEMC Electronic Materials, Inc. Semiconductor wafer post-polish clean and dry method and apparatus
US5997653A (en) * 1996-10-07 1999-12-07 Tokyo Electron Limited Method for washing and drying substrates
US5922136A (en) * 1997-03-28 1999-07-13 Taiwan Semiconductor Manufacturing Company, Ltd. Post-CMP cleaner apparatus and method
US6017437A (en) * 1997-08-22 2000-01-25 Cutek Research, Inc. Process chamber and method for depositing and/or removing material on a substrate
DE69832567T2 (de) * 1997-09-24 2007-01-18 Interuniversitair Micro-Electronica Centrum Vzw Verfahren und Vorrichtung zum Entfernen von einer Flüssigkeit von der Oberfläche eines rotierenden Substrats
US5807439A (en) * 1997-09-29 1998-09-15 Siemens Aktiengesellschaft Apparatus and method for improved washing and drying of semiconductor wafers
DE19801360A1 (de) * 1998-01-16 1999-07-22 Sez Semiconduct Equip Zubehoer Verfahren und Vorrichtung zum Behandeln von Halbleiter-Oberflächen
DE19806406C1 (de) * 1998-02-17 1999-07-29 Sez Semiconduct Equip Zubehoer Verfahren zum Rauhätzen einer Halbleiter-Oberfläche
US6172848B1 (en) * 1998-04-10 2001-01-09 International Business Machines Corporation Write head with self aligned pedestal shaped pole tips that are separated by a zero throat height defining layer
US5964953A (en) * 1998-05-26 1999-10-12 Memc Electronics Materials, Inc. Post-etching alkaline treatment process
JP2000003897A (ja) 1998-06-16 2000-01-07 Sony Corp 基板洗浄方法及び基板洗浄装置
US6099662A (en) * 1999-02-11 2000-08-08 Taiwan Semiconductor Manufacturing Company Process for cleaning a semiconductor substrate after chemical-mechanical polishing

Also Published As

Publication number Publication date
DE10052762A1 (de) 2002-05-16
KR20040004400A (ko) 2004-01-13
EP1328968A1 (de) 2003-07-23
WO2002035598A1 (de) 2002-05-02
KR100543928B1 (ko) 2006-01-20
US6833324B2 (en) 2004-12-21
US20030186553A1 (en) 2003-10-02

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