JP2004282063A5 - - Google Patents
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- Publication number
- JP2004282063A5 JP2004282063A5 JP2004056931A JP2004056931A JP2004282063A5 JP 2004282063 A5 JP2004282063 A5 JP 2004282063A5 JP 2004056931 A JP2004056931 A JP 2004056931A JP 2004056931 A JP2004056931 A JP 2004056931A JP 2004282063 A5 JP2004282063 A5 JP 2004282063A5
- Authority
- JP
- Japan
- Prior art keywords
- adhesive
- layer
- substrate
- forming
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 47
- 239000000758 substrate Substances 0.000 claims 27
- 239000000853 adhesive Substances 0.000 claims 26
- 230000001070 adhesive effect Effects 0.000 claims 26
- 239000010408 film Substances 0.000 claims 21
- 229910052751 metal Inorganic materials 0.000 claims 21
- 239000002184 metal Substances 0.000 claims 21
- 230000015572 biosynthetic process Effects 0.000 claims 19
- 239000004065 semiconductor Substances 0.000 claims 17
- 238000004519 manufacturing process Methods 0.000 claims 14
- 238000000034 method Methods 0.000 claims 12
- 239000010409 thin film Substances 0.000 claims 11
- 239000012790 adhesive layer Substances 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 4
- 239000000463 material Substances 0.000 claims 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
- 239000004952 Polyamide Substances 0.000 claims 2
- 239000004642 Polyimide Substances 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims 2
- 239000004033 plastic Substances 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- 229920002647 polyamide Polymers 0.000 claims 2
- 229920001721 polyimide Polymers 0.000 claims 2
- 239000011347 resin Substances 0.000 claims 2
- 229920005989 resin Polymers 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 239000011572 manganese Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052702 rhenium Inorganic materials 0.000 claims 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 239000010948 rhodium Substances 0.000 claims 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229910052713 technetium Inorganic materials 0.000 claims 1
- GKLVYJBZJHMRIY-UHFFFAOYSA-N technetium atom Chemical compound [Tc] GKLVYJBZJHMRIY-UHFFFAOYSA-N 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004056931A JP4748943B2 (ja) | 2003-02-28 | 2004-03-01 | 半導体装置の作製方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003053193 | 2003-02-28 | ||
| JP2003053193 | 2003-02-28 | ||
| JP2003053243 | 2003-02-28 | ||
| JP2003053243 | 2003-02-28 | ||
| JP2004056931A JP4748943B2 (ja) | 2003-02-28 | 2004-03-01 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004282063A JP2004282063A (ja) | 2004-10-07 |
| JP2004282063A5 true JP2004282063A5 (enrdf_load_stackoverflow) | 2007-04-12 |
| JP4748943B2 JP4748943B2 (ja) | 2011-08-17 |
Family
ID=33303679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004056931A Expired - Fee Related JP4748943B2 (ja) | 2003-02-28 | 2004-03-01 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4748943B2 (enrdf_load_stackoverflow) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005116824A (ja) * | 2003-10-08 | 2005-04-28 | Ricoh Co Ltd | 薄膜デバイス装置の製造方法、アクティブマトリクス基板の製造方法、電気光学装置の製造方法、薄膜デバイス装置、アクティブマトリクス基板及び電気光学装置 |
| JP2005183615A (ja) * | 2003-12-18 | 2005-07-07 | Ricoh Co Ltd | 薄膜デバイス装置の製造方法及び薄膜デバイス装置 |
| JP5089037B2 (ja) * | 2004-12-03 | 2012-12-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7566633B2 (en) * | 2005-02-25 | 2009-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP5025141B2 (ja) * | 2005-02-28 | 2012-09-12 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
| JP5025145B2 (ja) * | 2005-03-01 | 2012-09-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US9040420B2 (en) | 2005-03-01 | 2015-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device including peeling layers from substrates by etching |
| JP5052033B2 (ja) * | 2005-04-28 | 2012-10-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5057703B2 (ja) * | 2005-05-31 | 2012-10-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| EP1760776B1 (en) * | 2005-08-31 | 2019-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for semiconductor device with flexible substrate |
| JP5063066B2 (ja) * | 2005-09-30 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| CN101916763B (zh) | 2005-09-30 | 2012-11-14 | 株式会社半导体能源研究所 | 半导体器件的制造方法 |
| WO2007105405A1 (ja) * | 2006-03-10 | 2007-09-20 | Matsushita Electric Industrial Co., Ltd. | 異方性形状部材のマウント方法およびマウント装置と、電子デバイスの製造方法と、電子デバイスと、表示装置 |
| JP2007251080A (ja) * | 2006-03-20 | 2007-09-27 | Fujifilm Corp | プラスチック基板の固定方法、回路基板およびその製造方法 |
| JP5496445B2 (ja) | 2007-06-08 | 2014-05-21 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2009032912A (ja) * | 2007-07-27 | 2009-02-12 | Sony Corp | 半導体装置の製造方法および有機発光装置の製造方法 |
| US8047442B2 (en) | 2007-12-03 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101617280B1 (ko) * | 2009-10-21 | 2016-05-03 | 엘지디스플레이 주식회사 | 플라스틱 기판을 이용한 표시장치 제조 방법 |
| KR101779586B1 (ko) * | 2010-09-27 | 2017-10-10 | 엘지디스플레이 주식회사 | 플라스틱 기판을 이용한 표시장치 제조 방법 |
| JP5898949B2 (ja) * | 2011-12-27 | 2016-04-06 | パナソニック株式会社 | フレキシブルデバイスの製造方法 |
| US10354910B2 (en) | 2016-05-27 | 2019-07-16 | Raytheon Company | Foundry-agnostic post-processing method for a wafer |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10150176A (ja) * | 1996-11-15 | 1998-06-02 | Tadahiro Omi | 半導体基体とその作製方法 |
| JP5121103B2 (ja) * | 2000-09-14 | 2013-01-16 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体装置の作製方法及び電気器具 |
| JP2002353235A (ja) * | 2001-05-23 | 2002-12-06 | Matsushita Electric Ind Co Ltd | アクティブマトリクス基板とそれを用いた表示装置およびその製造方法 |
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2004
- 2004-03-01 JP JP2004056931A patent/JP4748943B2/ja not_active Expired - Fee Related