JP2004282063A5 - - Google Patents

Claims (19)

Forming a metal layer on the first substrate;
Forming an adhesive on a part of the metal layer using a material that reacts with the metal contained in the metal layer ,
Forming an oxide layer covering the metal layer and the adhesive;
Forming an element formation layer including a thin film transistor on the oxide layer;
A method for manufacturing a semiconductor device, wherein the adhesive is removed by etching a part of the element formation layer. Forming a metal layer on the first substrate;
Forming an adhesive on a part of the metal layer using a material that reacts with the metal contained in the metal layer ,
Forming an oxide layer covering the metal layer and the adhesive;
Forming an element formation layer including a thin film transistor on the oxide layer;
The adhesive is removed by etching a part of the element formation layer,
A second substrate is pasted on the element formation layer via a first adhesive,
A method for manufacturing a semiconductor device, wherein the second substrate and the element formation layer are separated from the first substrate by physical means. Forming a metal layer on the first substrate;
Forming an adhesive on a part of the metal layer using a material that reacts with the metal contained in the metal layer ,
Forming an oxide layer covering the metal layer and the adhesive;
Forming an element formation layer including a thin film transistor on the oxide layer;
The adhesive is removed by etching a part of the element formation layer,
A second substrate is pasted on the element formation layer via a first adhesive,
Peeling off the second substrate and the element formation layer from the first substrate by physical means;
Affixing the second substrate and the element forming layer on a third substrate via a second adhesive;
A method for manufacturing a semiconductor device, wherein the second substrate is removed from the element formation layer. Forming a metal layer on the first substrate;
Forming an adhesive on a part of the metal layer using a material that reacts with the metal contained in the metal layer,
Forming an oxide layer covering the metal layer and the adhesive;
Forming an element formation layer including a thin film transistor on the oxide layer;
The adhesive is removed by etching a part of the element formation layer,
A second substrate is pasted on the element formation layer via a first adhesive,
Peeling off the second substrate and the element formation layer from the first substrate by physical means;
Affixing the second substrate and the element forming layer on a third substrate via a second adhesive;
Removing the second substrate from the element formation layer;
A method for manufacturing a semiconductor device, comprising forming an insulating film over the element formation layer. 5. The method for manufacturing a semiconductor device according to claim 3, wherein the third substrate is made of plastic. In any one of Claims 1 thru | or 5 ,
A method for manufacturing a semiconductor device, wherein tungsten, molybdenum, technetium, rhenium, ruthenium, osmium, rhodium, iridium, palladium, platinum, silver, or gold is used as the metal layer. In any one of Claims 1 thru | or 6 ,
The element formation layer includes a heat treatment step of 400 ° C. or higher, preferably 600 ° C. or higher as part of its manufacturing step. In any one of Claims 1 thru | or 7 ,
The method for manufacturing a semiconductor device, wherein the thin film transistor is formed at a position not overlapping with the adhesive body. In any one of Claims 1 thru | or 8,
  The method for manufacturing a semiconductor device is characterized in that the adhesive body is arranged in a rectangle whose long side is parallel to the peeling direction while a plurality of thin film transistors are aligned. In any one of Claims 1 thru | or 8,
  The method of manufacturing a semiconductor device, wherein the adhesive body is arranged in a triangular shape whose bottom is perpendicular to the peeling direction while a plurality of thin film transistors are aligned. In any one of Claims 1 thru | or 8,
  The method for manufacturing a semiconductor device, wherein the adhesive body is arranged in a line while a plurality of thin film transistors are aligned. In any one of Claims 1 thru | or 11 ,
A method for manufacturing a semiconductor device, wherein any one of silicon, germanium, carbon, boron, magnesium, aluminum, titanium, tantalum, iron, cobalt, nickel, and manganese is used as the adhesive. In any one of Claims 2 thru | or 12,
Forming a film made of a water-soluble organic resin between the element forming layer and the first adhesive;
A method for manufacturing a semiconductor device, wherein the water-soluble organic resin is washed with water after the second substrate and the element formation layer are separated from the first substrate by physical means. 14. The insulating film according to claim 1, wherein the insulating film has a single layer structure using any one of silicon nitride, silicon nitride, silicon oxide, acrylic, polyimide, and polyamide, or a laminated structure in combination. A method for manufacturing a semiconductor device. Has an adhesive on a substrate,
A first insulating film on the adhesive layer;
The first insulating film is bonded to the substrate through at least the adhesive layer;
At least one thin film transistor is on the first insulating film;
A second insulating film is on the thin film transistor;
The first insulating film and the second insulating film are removed, and an opening is provided to expose the adhesive layer;
A semiconductor device comprising a third insulating film that covers the second insulating film and fills the opening. Has an adhesive on a substrate,
A first insulating film on the adhesive layer;
The first insulating film is bonded to the substrate through at least an adhesive layer;
An integrated circuit comprising at least a plurality of thin film transistors is on the first insulating film;
A second insulating film is on the integrated circuit;
The first insulating film and the second insulating film are removed, and an opening is provided to expose the adhesive layer;
A semiconductor device comprising a third insulating film that covers the second insulating film and fills the opening. Oite to claim 15 or claim 16, wherein a said substrate is a plastic. Any one to Oite of claims 15 to 17, wherein the adhesive is a semiconductor device which is a photo-curable or heat-curable. Any one to Oite of claims 15 to 18, wherein the third insulating film, silicon oxide, nitric oxide, a semiconductor device which is characterized by using acrylic, polyimide, any one of polyamide.