JP2003309221A5 - - Google Patents

Download PDF

Info

Publication number
JP2003309221A5
JP2003309221A5 JP2002111571A JP2002111571A JP2003309221A5 JP 2003309221 A5 JP2003309221 A5 JP 2003309221A5 JP 2002111571 A JP2002111571 A JP 2002111571A JP 2002111571 A JP2002111571 A JP 2002111571A JP 2003309221 A5 JP2003309221 A5 JP 2003309221A5
Authority
JP
Japan
Prior art keywords
film
semiconductor device
wafer
manufacturing
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002111571A
Other languages
Japanese (ja)
Other versions
JP4212293B2 (en
JP2003309221A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2002111571A priority Critical patent/JP4212293B2/en
Priority claimed from JP2002111571A external-priority patent/JP4212293B2/en
Publication of JP2003309221A publication Critical patent/JP2003309221A/en
Publication of JP2003309221A5 publication Critical patent/JP2003309221A5/ja
Application granted granted Critical
Publication of JP4212293B2 publication Critical patent/JP4212293B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Claims (9)

金属パッドが形成されたシリコンウエハと当該ウエハを支持する支持体とをフィルムを介して貼り合わせる工程と、
前記ウエハの裏面から前記金属パッドまで貫通する開口を形成する工程と、
前記開口の側壁部に絶縁膜を形成した後に、当該開口内に金属膜を形成する工程と、
前記金属膜上に電極を形成する工程と、
前記ウエハの裏面から前記フィルムまでダイシングする工程と、
前記ウエハと前記支持体とを分離する工程とを有することを特徴とする半導体装置の製造方法。 Bonding a silicon wafer on which a metal pad is formed and a support for supporting the wafer through a film;
Forming an opening penetrating from the back surface of the wafer to the metal pad;
Forming an insulating film on the side wall of the opening and then forming a metal film in the opening;
Forming an electrode on the metal film;
Dicing from the back surface of the wafer to the film;
The method of manufacturing a semiconductor device characterized by a step of separating the support and the wafer. 前記ウエハと当該ウエハを支持する支持体とをフィルムを介して貼り合わせる工程が、前記ウエハと前記支持体の外径よりも小さい外径を有するフィルムを前記ウエハと前記支持体とで挟んだ状態で、その周端部のみエポキシ樹脂を用いて貼り合わせる工程であることを特徴とする請求項１に記載の半導体装置の製造方法。 Support and the through the film bonding process, sandwiching a film having a smaller outer diameter than the outer diameter of the support and the wafer and the support and the wafer state for supporting the wafer and the wafer The method for manufacturing a semiconductor device according to claim 1, wherein only the peripheral edge portion is bonded using an epoxy resin. 前記フィルムが、アセトン溶液に溶ける有機系フィルムであることを特徴とする請求項１、２のいずれかに記載の半導体装置の製造方法。The method of manufacturing a semiconductor device according to claim 1 , wherein the film is an organic film that is soluble in an acetone solution. 前記フィルムが、粘着性を有するフィルムであることを特徴とする請求項１、２のいずれかに記載の半導体装置の製造方法。The method for manufacturing a semiconductor device according to claim 1 , wherein the film is an adhesive film. 前記フィルムとしてＵＶテープを用いる際には、前記支持体として透明ガラスを用いて、前記ダイシング工程後にＵＶ照射することを特徴とする請求項１、２のいずれかに記載の半導体装置の製造方法。Wherein when using UV tape as a film, by using a transparent glass as the support, a method of manufacturing a semiconductor device according to claim 1, 2, characterized by UV irradiation after the dicing step. 前記金属膜上に電極を形成する工程が、当該金属膜上に金属配線を形成し、当該配線上に電極を形成する工程を有することを特徴とする請求項１、２、３、４、５のいずれかに記載の半導体装置の製造方法。Forming an electrode on the metal film, a metal wiring is formed over the metal film, according to claim 1, characterized in that it comprises a step of forming an electrode on the wiring, 2,3,4,5 A method for manufacturing a semiconductor device according to any one of the above. 前記ウエハ裏面に前記開口を形成する前に、その裏面を研磨することを特徴とする請求項１、２、３、４、５、６のいずれかに記載の半導体装置の製造方法。The method for manufacturing a semiconductor device according to claim 1, wherein the back surface is polished before forming the opening on the back surface of the wafer. 前記金属パッド上に電極接続用の金属層を形成する工程を有することを特徴とする請求項The method includes forming a metal layer for electrode connection on the metal pad. 11 、２、３、４、５、６、７のいずれかに記載の半導体装置の製造方2, 3, 4, 5, 6, 7
法。Law. 一方の半導体装置の前記金属層と他方の半導体装置の前記電極とを積層する工程を有することを特徴とする請求項８に記載の半導体装置の製造方法。9. The method of manufacturing a semiconductor device according to claim 8, further comprising a step of stacking the metal layer of one semiconductor device and the electrode of the other semiconductor device.
JP2002111571A 2002-04-15 2002-04-15 Manufacturing method of semiconductor device Expired - Fee Related JP4212293B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002111571A JP4212293B2 (en) 2002-04-15 2002-04-15 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002111571A JP4212293B2 (en) 2002-04-15 2002-04-15 Manufacturing method of semiconductor device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2006088904A Division JP4425235B2 (en) 2006-03-28 2006-03-28 Semiconductor device and manufacturing method thereof
JP2006292233A Division JP4443549B2 (en) 2006-10-27 2006-10-27 Manufacturing method of semiconductor device

Publications (3)

Publication Number Publication Date
JP2003309221A JP2003309221A (en) 2003-10-31
JP2003309221A5 true JP2003309221A5 (en) 2005-09-22
JP4212293B2 JP4212293B2 (en) 2009-01-21

Family

ID=29394327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002111571A Expired - Fee Related JP4212293B2 (en) 2002-04-15 2002-04-15 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JP4212293B2 (en)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4340517B2 (en) * 2003-10-30 2009-10-07 Ｏｋｉセミコンダクタ株式会社 Semiconductor device and manufacturing method thereof
TWI249767B (en) * 2004-02-17 2006-02-21 Sanyo Electric Co Method for making a semiconductor device
JP2005235860A (en) * 2004-02-17 2005-09-02 Sanyo Electric Co Ltd Semiconductor device and manufacturing method thereof
JP4850392B2 (en) 2004-02-17 2012-01-11 三洋電機株式会社 Manufacturing method of semiconductor device
CN101373747B (en) * 2004-03-16 2011-06-29 株式会社藤仓 Device with through-hole interconnection and method for manufacturing the same
JP2005303258A (en) * 2004-03-16 2005-10-27 Fujikura Ltd Device and method for manufacturing the same
JP2005277173A (en) * 2004-03-25 2005-10-06 Sanyo Electric Co Ltd Semiconductor device, and its manufacturing method
JP4544902B2 (en) * 2004-04-26 2010-09-15 三洋電機株式会社 Semiconductor device and manufacturing method thereof
JP4746847B2 (en) 2004-04-27 2011-08-10 三洋電機株式会社 Manufacturing method of semiconductor device
JP4518995B2 (en) * 2004-05-24 2010-08-04 三洋電機株式会社 Semiconductor device and manufacturing method thereof
TWI272683B (en) 2004-05-24 2007-02-01 Sanyo Electric Co Semiconductor device and manufacturing method thereof
JP4376715B2 (en) 2004-07-16 2009-12-02 三洋電機株式会社 Manufacturing method of semiconductor device
JP4373866B2 (en) 2004-07-16 2009-11-25 三洋電機株式会社 Manufacturing method of semiconductor device
JP4524156B2 (en) * 2004-08-30 2010-08-11 新光電気工業株式会社 Semiconductor device and manufacturing method thereof
JP4139803B2 (en) 2004-09-28 2008-08-27 シャープ株式会社 Manufacturing method of semiconductor device
JP4936695B2 (en) * 2004-09-29 2012-05-23 オンセミコンダクター・トレーディング・リミテッド Semiconductor device and manufacturing method thereof
JP4966487B2 (en) 2004-09-29 2012-07-04 オンセミコンダクター・トレーディング・リミテッド Semiconductor device and manufacturing method thereof
TWI267183B (en) 2004-09-29 2006-11-21 Sanyo Electric Co Semiconductor device and manufacturing method of the same
JP4246132B2 (en) 2004-10-04 2009-04-02 シャープ株式会社 Semiconductor device and manufacturing method thereof
JP4443379B2 (en) 2004-10-26 2010-03-31 三洋電機株式会社 Manufacturing method of semiconductor device
TWI303864B (en) 2004-10-26 2008-12-01 Sanyo Electric Co Semiconductor device and method for making the same
JP4845368B2 (en) * 2004-10-28 2011-12-28 オンセミコンダクター・トレーディング・リミテッド Semiconductor device and manufacturing method thereof
JP5036127B2 (en) * 2004-10-26 2012-09-26 オンセミコンダクター・トレーディング・リミテッド Manufacturing method of semiconductor device
JP4873517B2 (en) 2004-10-28 2012-02-08 オンセミコンダクター・トレーディング・リミテッド Semiconductor device and manufacturing method thereof
US7576413B2 (en) 2004-11-30 2009-08-18 Kyushu Institute Of Technology Packaged stacked semiconductor device and method for manufacturing the same
US7485967B2 (en) 2005-03-10 2009-02-03 Sanyo Electric Co., Ltd. Semiconductor device with via hole for electric connection
JP2007036060A (en) * 2005-07-28 2007-02-08 Sanyo Electric Co Ltd Semiconductor device and manufacturing method thereof
JP4745007B2 (en) 2005-09-29 2011-08-10 三洋電機株式会社 Semiconductor device and manufacturing method thereof
JP2007180395A (en) * 2005-12-28 2007-07-12 Sanyo Electric Co Ltd Manufacturing method of semiconductor device
JP4619308B2 (en) * 2006-03-07 2011-01-26 三洋電機株式会社 Semiconductor device manufacturing method and supporting tape
JP5242063B2 (en) * 2006-03-22 2013-07-24 株式会社フジクラ Wiring board manufacturing method
JP2007305960A (en) * 2006-04-14 2007-11-22 Sharp Corp Semiconductor device and manufacturing method
JP2008041987A (en) * 2006-08-08 2008-02-21 Tokyo Ohka Kogyo Co Ltd Method and equipment for peeling support plate and wafer
JP2009272490A (en) * 2008-05-08 2009-11-19 Oki Semiconductor Co Ltd Semiconductor device and method of manufacturing semiconductor device
CN102598225B (en) 2009-10-16 2014-12-03 英派尔科技开发有限公司 Apparatus and method of applying a film to a semiconductor wafer and method of processing a semiconductor wafer
JP5258735B2 (en) * 2009-11-13 2013-08-07 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー Semiconductor device
JP5412316B2 (en) 2010-02-23 2014-02-12 パナソニック株式会社 Semiconductor device, stacked semiconductor device, and manufacturing method of semiconductor device
JP2010251791A (en) * 2010-06-24 2010-11-04 Sanyo Electric Co Ltd Semiconductor device and method of manufacturing the same
JP5870493B2 (en) * 2011-02-24 2016-03-01 セイコーエプソン株式会社 Semiconductor devices, sensors and electronic devices
JP2015115446A (en) 2013-12-11 2015-06-22 株式会社東芝 Semiconductor device manufacturing method
JP2019145737A (en) 2018-02-23 2019-08-29 ソニーセミコンダクタソリューションズ株式会社 Semiconductor device and manufacturing method of semiconductor device

Similar Documents

Publication Publication Date Title
JP2003309221A5 (en)
JP2002118081A5 (en)
TWI446420B (en) Releasing carrier method for semiconductor process
KR101043836B1 (en) Fabrication method of semiconductor integrated circuit device
JP3553551B2 (en) Method of manufacturing semiconductor device using semiconductor wafer
TWI256112B (en) Dicing film having shrinkage release film and method of manufacturing semiconductor package using the same
TW200727446A (en) Stack type semiconductor device manufacturing method and stack type electronic component manufacturing method
WO2009113831A3 (en) Multi-functional tape for semiconductor package and a method for manufacturing semiconductor device using the same
JP2009076658A5 (en)
WO2012056867A1 (en) Stacked body and method for detaching stacked body
EP1453090A3 (en) Manufacturing method of semiconductor device
CN101752273B (en) Method of manufacturing semiconductor device
JP2013038214A (en) Semiconductor device manufacturing method
SG113568A1 (en) Process for producing semiconductor devices, and heat resistant adhesive tape used in this process
JP2006196705A (en) Method for forming circuit element and multilayer circuit element
TW201635360A (en) Method for manufacturing semiconductor device
TW200614403A (en) Method of manufacturing semiconductor device, semiconductor device, and mounting structure of semiconductor device
JP2007129110A5 (en)
JPH08124881A (en) Dicing tape and method for assembling semiconductor device using it
TW201913899A (en) Integrated circuit package and manufacturing method thereof
CN104752189A (en) WLCSP wafer back thinning process
US7749866B2 (en) Method for sawing a wafer and method for manufacturing a semiconductor package by using a multiple-type tape
TW200708783A (en) Optical electronics integrated semiconductor device and method for fabricating the same
JPH1174230A (en) Manufacture of thin-film semiconductor device
TWI302023B (en) Adhesive film for semiconductor