JP2004219423A5 - - Google Patents
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- Publication number
- JP2004219423A5 JP2004219423A5 JP2004008393A JP2004008393A JP2004219423A5 JP 2004219423 A5 JP2004219423 A5 JP 2004219423A5 JP 2004008393 A JP2004008393 A JP 2004008393A JP 2004008393 A JP2004008393 A JP 2004008393A JP 2004219423 A5 JP2004219423 A5 JP 2004219423A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US44005003P | 2003-01-15 | 2003-01-15 | |
US10/750,986 US7268891B2 (en) | 2003-01-15 | 2004-01-05 | Transmission shear grating in checkerboard configuration for EUV wavefront sensor |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2004219423A JP2004219423A (ja) | 2004-08-05 |
JP2004219423A5 true JP2004219423A5 (ja) | 2005-05-26 |
JP3950858B2 JP3950858B2 (ja) | 2007-08-01 |
Family
ID=32600286
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004008393A Expired - Fee Related JP3950858B2 (ja) | 2003-01-15 | 2004-01-15 | 波面測定システム、euvフォトリソグラフィシステム、及び光学系の波面を測定する方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7268891B2 (ja) |
EP (1) | EP1439427A3 (ja) |
JP (1) | JP3950858B2 (ja) |
KR (1) | KR100730245B1 (ja) |
CN (1) | CN100476586C (ja) |
SG (1) | SG107675A1 (ja) |
TW (1) | TWI279590B (ja) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6867846B2 (en) * | 2003-01-15 | 2005-03-15 | Asml Holding Nv | Tailored reflecting diffractor for EUV lithographic system aberration measurement |
US7027164B2 (en) * | 2003-01-15 | 2006-04-11 | Asml Holding N.V. | Speckle reduction method and system for EUV interferometry |
US7268891B2 (en) * | 2003-01-15 | 2007-09-11 | Asml Holding N.V. | Transmission shear grating in checkerboard configuration for EUV wavefront sensor |
US8004690B2 (en) | 2004-01-16 | 2011-08-23 | Carl Zeiss Smt Gmbh | Device and method for the optical measurement of an optical system, measurement structure support, and microlithographic projection exposure apparatus |
JP4083751B2 (ja) * | 2004-01-29 | 2008-04-30 | エーエスエムエル ホールディング エヌ.ブイ. | 空間光変調器アレイを較正するシステムおよび空間光変調器アレイを較正する方法 |
US20050259269A1 (en) | 2004-05-19 | 2005-11-24 | Asml Holding N.V. | Shearing interferometer with dynamic pupil fill |
US20060001890A1 (en) * | 2004-07-02 | 2006-01-05 | Asml Holding N.V. | Spatial light modulator as source module for DUV wavefront sensor |
US7492442B2 (en) | 2004-08-27 | 2009-02-17 | Asml Holding N.V. | Adjustable resolution interferometric lithography system |
JP2006332586A (ja) * | 2005-04-25 | 2006-12-07 | Canon Inc | 測定装置、露光装置及び方法、並びに、デバイス製造方法 |
JP4984522B2 (ja) * | 2005-12-21 | 2012-07-25 | 株式会社ニコン | 波面収差測定装置、ピンホールマスク、投影露光装置、及び投影光学系の製造方法 |
DE102006014380A1 (de) * | 2006-03-27 | 2007-10-11 | Carl Zeiss Smt Ag | Projektionsobjektiv und Projektionsbelichtungsanlage mit negativer Schnittweite der Eintrittspupille |
US7889315B2 (en) * | 2006-04-13 | 2011-02-15 | Asml Netherlands B.V. | Lithographic apparatus, lens interferometer and device manufacturing method |
US20080246941A1 (en) * | 2007-04-06 | 2008-10-09 | Katsura Otaki | Wavefront aberration measuring device, projection exposure apparatus, method for manufacturing projection optical system, and method for manufacturing device |
NL1036305A1 (nl) | 2007-12-21 | 2009-06-23 | Asml Netherlands Bv | Grating for EUV-radiation, method for manufacturing the grating and wavefront measurement system. |
CN102197303A (zh) | 2008-10-29 | 2011-09-21 | 佳能株式会社 | X射线成像装置和x射线成像方法 |
US8559594B2 (en) | 2008-10-29 | 2013-10-15 | Canon Kabushiki Kaisha | Imaging apparatus and imaging method |
NL2004322A (en) | 2009-04-13 | 2010-10-14 | Asml Netherlands Bv | Cooling device, cooling arrangement and lithographic apparatus comprising a cooling arrangement. |
NL2004242A (en) * | 2009-04-13 | 2010-10-14 | Asml Netherlands Bv | Detector module, cooling arrangement and lithographic apparatus comprising a detector module. |
WO2012103933A1 (en) * | 2011-02-01 | 2012-08-09 | Carl Zeiss Smt Gmbh | Method and apparatus for correcting errors in an euv lithography system |
CN102436058B (zh) * | 2011-12-14 | 2013-08-21 | 北京理工大学 | 一种用于深紫外波段的全球面折反式准直物镜 |
DE102012204704A1 (de) * | 2012-03-23 | 2013-09-26 | Carl Zeiss Smt Gmbh | Messvorrichtung zum Vermessen einer Abbildungsgüte eines EUV-Objektives |
DE102015216438A1 (de) | 2015-08-27 | 2017-03-02 | Carl Zeiss Smt Gmbh | Sensoranordnung für eine Lithographieanlage, Lithographieanlage und Verfahren zum Betreiben einer Lithographieanlage |
DE102016212477A1 (de) * | 2016-07-08 | 2018-01-11 | Carl Zeiss Smt Gmbh | Messverfahren und Messsystem zur interferometrischen Vermessung der Abbildungsqualität eines optischen Abbildungssystems |
DE102017200428B3 (de) | 2017-01-12 | 2018-06-21 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage sowie Verfahren zum Vermessen eines Abbildungsfehlers |
CN108594586A (zh) * | 2018-07-17 | 2018-09-28 | 深圳市光科全息技术有限公司 | 超短焦投影光线膜 |
US11609506B2 (en) | 2021-04-21 | 2023-03-21 | Kla Corporation | System and method for lateral shearing interferometry in an inspection tool |
CN115309000A (zh) * | 2021-05-07 | 2022-11-08 | 中国科学院上海光学精密机械研究所 | 一种多通道物镜畸变和倍率的检测装置及方法 |
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US4490608A (en) * | 1980-10-21 | 1984-12-25 | Crosfield Electronics Limited | Position sensor |
US4413909A (en) | 1981-06-01 | 1983-11-08 | Lockheed Missiles & Space Co., Inc. | Wavefront tilt measuring apparatus |
JPS5816216A (ja) | 1981-07-22 | 1983-01-29 | Canon Inc | タルボ干渉計 |
US4518854A (en) * | 1982-06-17 | 1985-05-21 | Itek Corporation | Combined shearing interferometer and Hartmann wavefront sensor |
US4703434A (en) * | 1984-04-24 | 1987-10-27 | The Perkin-Elmer Corporation | Apparatus for measuring overlay error |
US4707137A (en) * | 1985-10-25 | 1987-11-17 | Laser Magnetic Storage International Company | Device and method for testing the wave front quality of optical components |
NL8601278A (nl) | 1986-05-21 | 1987-12-16 | Philips Nv | Inrichting voor het detekteren van een vergrotingsfout in een optisch afbeeldingssysteem. |
JP2543200B2 (ja) * | 1989-09-13 | 1996-10-16 | 松下電器産業株式会社 | レンズ評価装置 |
US5062705A (en) | 1989-09-13 | 1991-11-05 | Matsushita Electric Industrial Co., Ltd. | Apparatus for evaluating a lens |
JPH03134538A (ja) | 1989-10-19 | 1991-06-07 | Matsushita Electric Ind Co Ltd | レンズ評価装置 |
EP0449582B1 (en) | 1990-03-27 | 2009-10-21 | Canon Kabushiki Kaisha | Measuring method and apparatus |
US5424552A (en) * | 1991-07-09 | 1995-06-13 | Nikon Corporation | Projection exposing apparatus |
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US5222050A (en) * | 1992-06-19 | 1993-06-22 | Knowles Electronics, Inc. | Water-resistant transducer housing with hydrophobic vent |
GB2269055B (en) * | 1992-07-09 | 1996-06-05 | Flat Antenna Co Ltd | Phase correcting zone plate |
JP3078163B2 (ja) * | 1993-10-15 | 2000-08-21 | キヤノン株式会社 | リソグラフィ用反射型マスクおよび縮小投影露光装置 |
KR950033689A (ko) * | 1994-03-02 | 1995-12-26 | 오노 시게오 | 노광장치 및 이를 이용한 회로패턴 형성방법 |
JP3448673B2 (ja) | 1994-03-02 | 2003-09-22 | 株式会社ニコン | 投影露光装置 |
EP0712012A1 (en) * | 1994-11-09 | 1996-05-15 | International Business Machines Corporation | Authentication label and authenticating pattern incorporating diffracting structure and method of fabricating them |
JPH08316124A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
US5835217A (en) * | 1997-02-28 | 1998-11-10 | The Regents Of The University Of California | Phase-shifting point diffraction interferometer |
US5920380A (en) * | 1997-12-19 | 1999-07-06 | Sandia Corporation | Apparatus and method for generating partially coherent illumination for photolithography |
US5958629A (en) * | 1997-12-22 | 1999-09-28 | Intel Corporation | Using thin films as etch stop in EUV mask fabrication process |
US6898216B1 (en) | 1999-06-30 | 2005-05-24 | Lambda Physik Ag | Reduction of laser speckle in photolithography by controlled disruption of spatial coherence of laser beam |
US6072631A (en) * | 1998-07-09 | 2000-06-06 | 3M Innovative Properties Company | Diffractive homogenizer with compensation for spatial coherence |
US6312373B1 (en) * | 1998-09-22 | 2001-11-06 | Nikon Corporation | Method of manufacturing an optical system |
US6498685B1 (en) * | 1999-01-11 | 2002-12-24 | Kenneth C. Johnson | Maskless, microlens EUV lithography system |
JP2000266914A (ja) | 1999-03-12 | 2000-09-29 | Toppan Printing Co Ltd | 光拡散体およびそれを用いた表示装置 |
US6163405A (en) * | 1999-04-15 | 2000-12-19 | Industrial Technology Research Institute | Structure of a reflection-type light diffuser in a LCD |
US6360012B1 (en) | 1999-06-25 | 2002-03-19 | Svg Lithography Systems, Inc. | In situ projection optic metrology method and apparatus |
US6373553B1 (en) | 1999-09-20 | 2002-04-16 | Intel Corp. | Photo-lithographic method to print a line-space pattern with a pitch equal to half the pitch of the mask |
US6266147B1 (en) * | 1999-10-14 | 2001-07-24 | The Regents Of The University Of California | Phase-shifting point diffraction interferometer phase grating designs |
DE19958201A1 (de) * | 1999-12-02 | 2001-06-21 | Infineon Technologies Ag | Lithographieverfahren und Maske zu dessen Durchführung |
GB9928483D0 (en) | 1999-12-03 | 2000-02-02 | Renishaw Plc | Opto-electronic scale reading apparatus |
US6410193B1 (en) * | 1999-12-30 | 2002-06-25 | Intel Corporation | Method and apparatus for a reflective mask that is inspected at a first wavelength and exposed during semiconductor manufacturing at a second wavelength |
TW550377B (en) * | 2000-02-23 | 2003-09-01 | Zeiss Stiftung | Apparatus for wave-front detection |
US6573997B1 (en) * | 2000-07-17 | 2003-06-03 | The Regents Of California | Hybrid shearing and phase-shifting point diffraction interferometer |
JP2002055226A (ja) | 2000-08-07 | 2002-02-20 | Nippon Sheet Glass Co Ltd | 偏光素子及びその製造方法 |
EP1197803B1 (en) | 2000-10-10 | 2012-02-01 | ASML Netherlands B.V. | Lithographic apparatus |
WO2002042728A1 (fr) | 2000-11-27 | 2002-05-30 | Nikon Corporation | Procede et dispositif permettant de mesurer les aberrations d'un systeme optique de projection et procede et dispositif d'exposition |
US6392792B1 (en) * | 2000-12-05 | 2002-05-21 | The Regents Of The University Of California | Method of fabricating reflection-mode EUV diffraction elements |
JP2002206990A (ja) * | 2001-01-09 | 2002-07-26 | Canon Inc | 波面収差測定方法及び投影露光装置 |
EP1231514A1 (en) * | 2001-02-13 | 2002-08-14 | Asm Lithography B.V. | Measurement of wavefront aberrations in a lithographic projection apparatus |
EP1231517A1 (en) | 2001-02-13 | 2002-08-14 | ASML Netherlands B.V. | Lithographic projection apparatus and method of measuring wave front aberrations |
US6656643B2 (en) | 2001-02-20 | 2003-12-02 | Chartered Semiconductor Manufacturing Ltd. | Method of extreme ultraviolet mask engineering |
JP2002267842A (ja) * | 2001-03-12 | 2002-09-18 | Nippon Sheet Glass Co Ltd | 偏光素子及びその製造方法 |
US6861273B2 (en) * | 2001-04-30 | 2005-03-01 | Euv Llc | Method of fabricating reflection-mode EUV diffusers |
EP1256843A1 (en) | 2001-05-08 | 2002-11-13 | ASML Netherlands B.V. | Method of calibrating a lithographic apparatus |
US6813077B2 (en) * | 2001-06-19 | 2004-11-02 | Corning Incorporated | Method for fabricating an integrated optical isolator and a novel wire grid structure |
US7027226B2 (en) * | 2001-09-17 | 2006-04-11 | Euv Llc | Diffractive optical element for extreme ultraviolet wavefront control |
US6665119B1 (en) * | 2002-10-15 | 2003-12-16 | Eastman Kodak Company | Wire grid polarizer |
EP1573401A1 (de) | 2002-12-19 | 2005-09-14 | Carl Zeiss SMT AG | Messverfahren und messsystem zur vermessung der abbildungsqualität eines optischen abbildungssystems |
US7113335B2 (en) * | 2002-12-30 | 2006-09-26 | Sales Tasso R | Grid polarizer with suppressed reflectivity |
US7002747B2 (en) | 2003-01-15 | 2006-02-21 | Asml Holding N.V. | Diffuser plate and method of making same |
US7027164B2 (en) * | 2003-01-15 | 2006-04-11 | Asml Holding N.V. | Speckle reduction method and system for EUV interferometry |
US7268891B2 (en) * | 2003-01-15 | 2007-09-11 | Asml Holding N.V. | Transmission shear grating in checkerboard configuration for EUV wavefront sensor |
US6867846B2 (en) * | 2003-01-15 | 2005-03-15 | Asml Holding Nv | Tailored reflecting diffractor for EUV lithographic system aberration measurement |
-
2004
- 2004-01-05 US US10/750,986 patent/US7268891B2/en active Active
- 2004-01-12 SG SG200400111A patent/SG107675A1/en unknown
- 2004-01-13 EP EP04000525A patent/EP1439427A3/en not_active Withdrawn
- 2004-01-14 TW TW093100919A patent/TWI279590B/zh not_active IP Right Cessation
- 2004-01-15 CN CNB2004100019184A patent/CN100476586C/zh not_active Expired - Fee Related
- 2004-01-15 KR KR1020040003044A patent/KR100730245B1/ko not_active IP Right Cessation
- 2004-01-15 JP JP2004008393A patent/JP3950858B2/ja not_active Expired - Fee Related
-
2007
- 2007-02-21 US US11/708,618 patent/US7602503B2/en not_active Expired - Lifetime
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