JP2004214264A - 低抵抗ｎ型半導体ダイヤモンドおよびその製造方法 - Google Patents

低抵抗ｎ型半導体ダイヤモンドおよびその製造方法 Download PDF

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Publication number
JP2004214264A
JP2004214264A JP2002379229A JP2002379229A JP2004214264A JP 2004214264 A JP2004214264 A JP 2004214264A JP 2002379229 A JP2002379229 A JP 2002379229A JP 2002379229 A JP2002379229 A JP 2002379229A JP 2004214264 A JP2004214264 A JP 2004214264A
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JP
Japan
Prior art keywords
type semiconductor
resistance
low
lithium
diamond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002379229A
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English (en)
Japanese (ja)
Inventor
Akihiko Nanba
暁彦 難波
Takahiro Imai
貴浩 今井
Hisao Takeuchi
久雄 竹内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP2002379229A priority Critical patent/JP2004214264A/ja
Priority to PCT/JP2003/016492 priority patent/WO2004061167A1/ja
Priority to CNB2003801002131A priority patent/CN100337310C/zh
Priority to US10/506,493 priority patent/US7255744B2/en
Priority to KR1020047013528A priority patent/KR20050084776A/ko
Priority to CA002474909A priority patent/CA2474909A1/en
Priority to HK05111223.1A priority patent/HK1076494B/xx
Priority to AU2003289501A priority patent/AU2003289501A1/en
Priority to EP03781010A priority patent/EP1577425A4/en
Priority to TW092136884A priority patent/TW200421455A/zh
Publication of JP2004214264A publication Critical patent/JP2004214264A/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2903—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3406—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type

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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
JP2002379229A 2002-12-27 2002-12-27 低抵抗ｎ型半導体ダイヤモンドおよびその製造方法 Pending JP2004214264A (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP2002379229A JP2004214264A (ja) 2002-12-27 2002-12-27 低抵抗ｎ型半導体ダイヤモンドおよびその製造方法
PCT/JP2003/016492 WO2004061167A1 (ja) 2002-12-27 2003-12-22 低抵抗ｎ型半導体ダイヤモンドおよびその製造方法
CNB2003801002131A CN100337310C (zh) 2002-12-27 2003-12-22 低电阻率n－型半导体金刚石及其制备方法
US10/506,493 US7255744B2 (en) 2002-12-27 2003-12-22 Low-resistivity n-type semiconductor diamond and method of its manufacture
KR1020047013528A KR20050084776A (ko) 2002-12-27 2003-12-22 저저항 ｎ형 반도체 다이아몬드 및 그 제조 방법
CA002474909A CA2474909A1 (en) 2002-12-27 2003-12-22 Low-resistance n type semiconductor diamond and process for producing the same
HK05111223.1A HK1076494B (en) 2002-12-27 2003-12-22 Low-resistivity n-type semiconductor diamond and method of its manufacture
AU2003289501A AU2003289501A1 (en) 2002-12-27 2003-12-22 LOW-RESISTANCE n TYPE SEMICONDUCTOR DIAMOND AND PROCESS FOR PRODUCING THE SAME
EP03781010A EP1577425A4 (en) 2002-12-27 2003-12-22 n-SEMICONDUCTOR DIAMOND WITH LOW RESISTANCE AND MANUFACTURING METHOD THEREFOR
TW092136884A TW200421455A (en) 2002-12-27 2003-12-25 Low-resistance n-type semiconductor diamond and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002379229A JP2004214264A (ja) 2002-12-27 2002-12-27 低抵抗ｎ型半導体ダイヤモンドおよびその製造方法

Publications (1)

Publication Number Publication Date
JP2004214264A true JP2004214264A (ja) 2004-07-29

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JP2002379229A Pending JP2004214264A (ja) 2002-12-27 2002-12-27 低抵抗ｎ型半導体ダイヤモンドおよびその製造方法

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Country Link
US (1) US7255744B2 (enExample)
EP (1) EP1577425A4 (enExample)
JP (1) JP2004214264A (enExample)
KR (1) KR20050084776A (enExample)
CN (1) CN100337310C (enExample)
AU (1) AU2003289501A1 (enExample)
CA (1) CA2474909A1 (enExample)
TW (1) TW200421455A (enExample)
WO (1) WO2004061167A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007045667A (ja) * 2005-08-10 2007-02-22 Sumitomo Electric Ind Ltd ドーパント原子の大きさを補償したダイヤモンド
JP2014078733A (ja) * 2009-07-22 2014-05-01 National Institute Of Advanced Industrial & Technology 半導体ダイヤモンドデバイス用オーミック電極
JP2014527715A (ja) * 2011-07-30 2014-10-16 エーケーエイチエーエヌ テクノロジーズ インクＡｋｈａｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ， Ｉｎｃ． ダイヤモンド半導体システムと方法
WO2016010028A1 (ja) * 2014-07-15 2016-01-21 住友電気工業株式会社 単結晶ダイヤモンド、単結晶ダイヤモンドの製造方法及び単結晶ダイヤモンドを用いた工具
WO2017014311A1 (ja) * 2015-07-22 2017-01-26 住友電気工業株式会社 単結晶ダイヤモンド材、単結晶ダイヤモンドチップおよび穿孔工具

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005041279A1 (ja) * 2003-10-29 2005-05-06 Sumitomo Electric Industries, Ltd. ｎ型半導体ダイヤモンドの製造方法及びｎ型半導体ダイヤモンド
TWI446889B (zh) * 2011-10-20 2014-08-01 Univ Nat Cheng Kung 多功能手術裝置及包含其之手術系統
CN103103609B (zh) * 2013-03-05 2015-08-19 三门峡纵横超硬材料有限公司 N型金刚石半导体单晶及其生产方法
CN103952681B (zh) * 2014-04-23 2016-04-20 南京理工大学 一种锂氮共掺杂金刚石薄膜的制备方法
CN114655953B (zh) * 2014-08-08 2024-07-23 住友电气工业株式会社 制造金刚石的方法、金刚石、金刚石复合基板、金刚石接合基板和工具
US9484474B1 (en) * 2015-07-02 2016-11-01 Uchicago Argonne, Llc Ultrananocrystalline diamond contacts for electronic devices
CN117070917A (zh) * 2023-09-11 2023-11-17 季华实验室 一种掺杂金刚石制备方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60112697A (ja) * 1983-11-18 1985-06-19 Agency Of Ind Science & Technol ダイヤモンドの光化学的堆積合成方法およびその装置
JPS61236691A (ja) * 1985-04-09 1986-10-21 Nec Corp ダイヤモンドの気相合成法
JPS62212297A (ja) 1986-03-11 1987-09-18 Toshiba Corp 半導体ダイヤモンドの製造方法
JPS63288991A (ja) * 1987-05-20 1988-11-25 Sumitomo Electric Ind Ltd ダイヤモンドの気相合成法
JPH01261299A (ja) * 1988-04-11 1989-10-18 Kawasaki Steel Corp ダイヤモンド若しくはダイヤモンド状の薄膜の形成方法
JPH03205398A (ja) 1989-12-30 1991-09-06 Canon Inc ダイヤモンドの製造方法
WO1992001314A1 (en) 1990-07-06 1992-01-23 Advanced Technology Materials, Inc. N-type semiconducting diamond, and method of making the same
JPH04174517A (ja) 1990-11-07 1992-06-22 Canon Inc ダイヤモンド半導体の製造方法
JPH04175295A (ja) 1990-11-07 1992-06-23 Canon Inc 半導体ダイヤモンドの製造方法
EP0543392A3 (en) * 1991-11-21 1993-10-20 Canon Kk Diamond semiconductor device and method of producing the same
JP3374866B2 (ja) 1993-08-30 2003-02-10 住友電気工業株式会社 半導体ダイヤモンド及びその形成方法
JP3334286B2 (ja) * 1993-09-30 2002-10-15 ソニー株式会社 ダイアモンド半導体の製造方法
US6887144B2 (en) * 1996-11-12 2005-05-03 Diamond Innovations, Inc. Surface impurity-enriched diamond and method of making
JPH10247624A (ja) * 1997-03-05 1998-09-14 Asahi Chem Ind Co Ltd ｎ型単結晶ダイヤモンドおよびその製造方法、人工ダイヤモンドの製造方法
JPH1154443A (ja) * 1997-08-07 1999-02-26 New Japan Radio Co Ltd Ｎ型ダイアモンド半導体の製造方法
JPH11214321A (ja) * 1998-01-27 1999-08-06 Sumitomo Electric Ind Ltd ダイヤモンド材料の改質方法と、その方法により改質されたダイヤモンド材料を用いた半導体装置
US6414338B1 (en) * 1998-11-30 2002-07-02 Sandia National Laboratories n-Type diamond and method for producing same
JP2001035804A (ja) * 1999-07-21 2001-02-09 Agency Of Ind Science & Technol ダイヤモンド半導体およびその作製方法
WO2005041279A1 (ja) * 2003-10-29 2005-05-06 Sumitomo Electric Industries, Ltd. ｎ型半導体ダイヤモンドの製造方法及びｎ型半導体ダイヤモンド

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007045667A (ja) * 2005-08-10 2007-02-22 Sumitomo Electric Ind Ltd ドーパント原子の大きさを補償したダイヤモンド
JP2014078733A (ja) * 2009-07-22 2014-05-01 National Institute Of Advanced Industrial & Technology 半導体ダイヤモンドデバイス用オーミック電極
JP2014527715A (ja) * 2011-07-30 2014-10-16 エーケーエイチエーエヌ テクノロジーズ インクＡｋｈａｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ， Ｉｎｃ． ダイヤモンド半導体システムと方法
WO2016010028A1 (ja) * 2014-07-15 2016-01-21 住友電気工業株式会社 単結晶ダイヤモンド、単結晶ダイヤモンドの製造方法及び単結晶ダイヤモンドを用いた工具
JPWO2016010028A1 (ja) * 2014-07-15 2017-04-27 住友電気工業株式会社 単結晶ダイヤモンド、単結晶ダイヤモンドの製造方法及び単結晶ダイヤモンドを用いた工具
US10316430B2 (en) 2014-07-15 2019-06-11 Sumitomo Electric Industries, Ltd. Single crystal diamond, method for manufacturing single crystal diamond, and tool containing single crystal diamond
WO2017014311A1 (ja) * 2015-07-22 2017-01-26 住友電気工業株式会社 単結晶ダイヤモンド材、単結晶ダイヤモンドチップおよび穿孔工具
JP6118954B1 (ja) * 2015-07-22 2017-04-19 住友電気工業株式会社 単結晶ダイヤモンド材、単結晶ダイヤモンドチップおよび穿孔工具
US10287708B2 (en) 2015-07-22 2019-05-14 Sumitomo Electric Industries, Ltd. Single-crystal diamond material, single-crystal diamond chip, and perforated tool
US10774442B2 (en) 2015-07-22 2020-09-15 Sumitomo Electric Industries, Ltd. Single-crystal diamond material, single-crystal diamond chip, and perforated tool

Also Published As

Publication number Publication date
HK1076494A1 (zh) 2006-01-20
CA2474909A1 (en) 2004-07-22
EP1577425A4 (en) 2007-02-28
US7255744B2 (en) 2007-08-14
WO2004061167A1 (ja) 2004-07-22
CN100337310C (zh) 2007-09-12
AU2003289501A1 (en) 2004-07-29
TWI302342B (enExample) 2008-10-21
TW200421455A (en) 2004-10-16
US20050217561A1 (en) 2005-10-06
CN1692186A (zh) 2005-11-02
EP1577425A1 (en) 2005-09-21
KR20050084776A (ko) 2005-08-29

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