TW200421455A - Low-resistance n-type semiconductor diamond and its manufacturing method - Google Patents

Low-resistance n-type semiconductor diamond and its manufacturing method Download PDF

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Publication number
TW200421455A
TW200421455A TW092136884A TW92136884A TW200421455A TW 200421455 A TW200421455 A TW 200421455A TW 092136884 A TW092136884 A TW 092136884A TW 92136884 A TW92136884 A TW 92136884A TW 200421455 A TW200421455 A TW 200421455A
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TW
Taiwan
Prior art keywords
resistance
low
type semiconductor
diamond
lithium
Prior art date
Application number
TW092136884A
Other languages
English (en)
Chinese (zh)
Other versions
TWI302342B (enExample
Inventor
Akihiko Namba
Takahiro Imai
Hisao Takeuchi
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Sumitomo Electric Industries
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Publication of TW200421455A publication Critical patent/TW200421455A/zh
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Publication of TWI302342B publication Critical patent/TWI302342B/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2903—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3406—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
TW092136884A 2002-12-27 2003-12-25 Low-resistance n-type semiconductor diamond and its manufacturing method TW200421455A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002379229A JP2004214264A (ja) 2002-12-27 2002-12-27 低抵抗ｎ型半導体ダイヤモンドおよびその製造方法

Publications (2)

Publication Number Publication Date
TW200421455A true TW200421455A (en) 2004-10-16
TWI302342B TWI302342B (enExample) 2008-10-21

Family

ID=32708382

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092136884A TW200421455A (en) 2002-12-27 2003-12-25 Low-resistance n-type semiconductor diamond and its manufacturing method

Country Status (9)

Country Link
US (1) US7255744B2 (enExample)
EP (1) EP1577425A4 (enExample)
JP (1) JP2004214264A (enExample)
KR (1) KR20050084776A (enExample)
CN (1) CN100337310C (enExample)
AU (1) AU2003289501A1 (enExample)
CA (1) CA2474909A1 (enExample)
TW (1) TW200421455A (enExample)
WO (1) WO2004061167A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005041279A1 (ja) * 2003-10-29 2005-05-06 Sumitomo Electric Industries, Ltd. ｎ型半導体ダイヤモンドの製造方法及びｎ型半導体ダイヤモンド
JP4742736B2 (ja) * 2005-08-10 2011-08-10 住友電気工業株式会社 ダイヤモンドへのドーパント原子決定方法
US8735907B2 (en) * 2009-07-22 2014-05-27 National Institute Of Advanced Industrial Science And Technology Ohmic electrode for use in a semiconductor diamond device
US20130026492A1 (en) * 2011-07-30 2013-01-31 Akhan Technologies Inc. Diamond Semiconductor System and Method
TWI446889B (zh) * 2011-10-20 2014-08-01 Univ Nat Cheng Kung 多功能手術裝置及包含其之手術系統
CN103103609B (zh) * 2013-03-05 2015-08-19 三门峡纵横超硬材料有限公司 N型金刚石半导体单晶及其生产方法
CN103952681B (zh) * 2014-04-23 2016-04-20 南京理工大学 一种锂氮共掺杂金刚石薄膜的制备方法
EP3170926B1 (en) 2014-07-15 2025-02-12 Sumitomo Electric Industries, Ltd. Single crystal diamond, method for producing single crystal diamond, and tool using single crystal diamond
CN114655953B (zh) * 2014-08-08 2024-07-23 住友电气工业株式会社 制造金刚石的方法、金刚石、金刚石复合基板、金刚石接合基板和工具
US9484474B1 (en) * 2015-07-02 2016-11-01 Uchicago Argonne, Llc Ultrananocrystalline diamond contacts for electronic devices
KR102626684B1 (ko) 2015-07-22 2024-01-17 스미토모덴키고교가부시키가이샤 단결정 다이아몬드재, 단결정 다이아몬드칩 및 천공 공구
CN117070917A (zh) * 2023-09-11 2023-11-17 季华实验室 一种掺杂金刚石制备方法

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JPS60112697A (ja) * 1983-11-18 1985-06-19 Agency Of Ind Science & Technol ダイヤモンドの光化学的堆積合成方法およびその装置
JPS61236691A (ja) * 1985-04-09 1986-10-21 Nec Corp ダイヤモンドの気相合成法
JPS62212297A (ja) 1986-03-11 1987-09-18 Toshiba Corp 半導体ダイヤモンドの製造方法
JPS63288991A (ja) * 1987-05-20 1988-11-25 Sumitomo Electric Ind Ltd ダイヤモンドの気相合成法
JPH01261299A (ja) * 1988-04-11 1989-10-18 Kawasaki Steel Corp ダイヤモンド若しくはダイヤモンド状の薄膜の形成方法
JPH03205398A (ja) 1989-12-30 1991-09-06 Canon Inc ダイヤモンドの製造方法
WO1992001314A1 (en) 1990-07-06 1992-01-23 Advanced Technology Materials, Inc. N-type semiconducting diamond, and method of making the same
JPH04174517A (ja) 1990-11-07 1992-06-22 Canon Inc ダイヤモンド半導体の製造方法
JPH04175295A (ja) 1990-11-07 1992-06-23 Canon Inc 半導体ダイヤモンドの製造方法
EP0543392A3 (en) * 1991-11-21 1993-10-20 Canon Kk Diamond semiconductor device and method of producing the same
JP3374866B2 (ja) 1993-08-30 2003-02-10 住友電気工業株式会社 半導体ダイヤモンド及びその形成方法
JP3334286B2 (ja) * 1993-09-30 2002-10-15 ソニー株式会社 ダイアモンド半導体の製造方法
US6887144B2 (en) * 1996-11-12 2005-05-03 Diamond Innovations, Inc. Surface impurity-enriched diamond and method of making
JPH10247624A (ja) * 1997-03-05 1998-09-14 Asahi Chem Ind Co Ltd ｎ型単結晶ダイヤモンドおよびその製造方法、人工ダイヤモンドの製造方法
JPH1154443A (ja) * 1997-08-07 1999-02-26 New Japan Radio Co Ltd Ｎ型ダイアモンド半導体の製造方法
JPH11214321A (ja) * 1998-01-27 1999-08-06 Sumitomo Electric Ind Ltd ダイヤモンド材料の改質方法と、その方法により改質されたダイヤモンド材料を用いた半導体装置
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WO2005041279A1 (ja) * 2003-10-29 2005-05-06 Sumitomo Electric Industries, Ltd. ｎ型半導体ダイヤモンドの製造方法及びｎ型半導体ダイヤモンド

Also Published As

Publication number Publication date
HK1076494A1 (zh) 2006-01-20
CA2474909A1 (en) 2004-07-22
EP1577425A4 (en) 2007-02-28
US7255744B2 (en) 2007-08-14
WO2004061167A1 (ja) 2004-07-22
CN100337310C (zh) 2007-09-12
JP2004214264A (ja) 2004-07-29
AU2003289501A1 (en) 2004-07-29
TWI302342B (enExample) 2008-10-21
US20050217561A1 (en) 2005-10-06
CN1692186A (zh) 2005-11-02
EP1577425A1 (en) 2005-09-21
KR20050084776A (ko) 2005-08-29

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