TW200421455A - Low-resistance n-type semiconductor diamond and its manufacturing method - Google Patents
Low-resistance n-type semiconductor diamond and its manufacturing method Download PDFInfo
- Publication number
- TW200421455A TW200421455A TW092136884A TW92136884A TW200421455A TW 200421455 A TW200421455 A TW 200421455A TW 092136884 A TW092136884 A TW 092136884A TW 92136884 A TW92136884 A TW 92136884A TW 200421455 A TW200421455 A TW 200421455A
- Authority
- TW
- Taiwan
- Prior art keywords
- resistance
- low
- type semiconductor
- diamond
- lithium
- Prior art date
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 129
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 116
- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 91
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 68
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 56
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims abstract description 53
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000002994 raw material Substances 0.000 claims abstract description 22
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 9
- 239000012808 vapor phase Substances 0.000 claims abstract 2
- 239000013078 crystal Substances 0.000 claims description 29
- 239000007789 gas Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 28
- 230000015572 biosynthetic process Effects 0.000 claims description 17
- 229910052799 carbon Inorganic materials 0.000 claims description 14
- 238000003786 synthesis reaction Methods 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 150000002641 lithium Chemical group 0.000 claims description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 12
- 230000004913 activation Effects 0.000 claims description 11
- 125000004429 atom Chemical group 0.000 claims description 9
- 229910021529 ammonia Inorganic materials 0.000 claims description 6
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims description 4
- 229910001947 lithium oxide Inorganic materials 0.000 claims description 4
- 230000001443 photoexcitation Effects 0.000 claims description 4
- 238000001308 synthesis method Methods 0.000 claims description 4
- 239000012071 phase Substances 0.000 claims 2
- 230000005284 excitation Effects 0.000 abstract description 5
- 230000003287 optical effect Effects 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- 238000010189 synthetic method Methods 0.000 abstract 1
- 238000006467 substitution reaction Methods 0.000 description 17
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 10
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 8
- 229910052717 sulfur Inorganic materials 0.000 description 8
- 239000011593 sulfur Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 150000003254 radicals Chemical class 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 239000004575 stone Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 210000002381 plasma Anatomy 0.000 description 3
- 241000283690 Bos taurus Species 0.000 description 2
- 238000004435 EPR spectroscopy Methods 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002642 lithium compounds Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000000190 proton-induced X-ray emission spectroscopy Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 230000005469 synchrotron radiation Effects 0.000 description 2
- 240000001972 Gardenia jasminoides Species 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- IDBFBDSKYCUNPW-UHFFFAOYSA-N lithium nitride Chemical compound [Li]N([Li])[Li] IDBFBDSKYCUNPW-UHFFFAOYSA-N 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 229910052902 vermiculite Inorganic materials 0.000 description 1
- 235000019354 vermiculite Nutrition 0.000 description 1
- 239000010455 vermiculite Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004846 x-ray emission Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02376—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02527—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02634—Homoepitaxy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002379229A JP2004214264A (ja) | 2002-12-27 | 2002-12-27 | 低抵抗ｎ型半導体ダイヤモンドおよびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200421455A true TW200421455A (en) | 2004-10-16 |
| TWI302342B TWI302342B (enExample) | 2008-10-21 |
Family
ID=32708382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092136884A TW200421455A (en) | 2002-12-27 | 2003-12-25 | Low-resistance n-type semiconductor diamond and its manufacturing method |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7255744B2 (enExample) |
| EP (1) | EP1577425A4 (enExample) |
| JP (1) | JP2004214264A (enExample) |
| KR (1) | KR20050084776A (enExample) |
| CN (1) | CN100337310C (enExample) |
| AU (1) | AU2003289501A1 (enExample) |
| CA (1) | CA2474909A1 (enExample) |
| TW (1) | TW200421455A (enExample) |
| WO (1) | WO2004061167A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2003289502A1 (en) * | 2003-10-29 | 2005-05-11 | Sumitomo Electric Industries, Ltd. | Process for producing n-type semiconductor diamond and n-type semiconductor diamond |
| JP4742736B2 (ja) * | 2005-08-10 | 2011-08-10 | 住友電気工業株式会社 | ダイヤモンドへのドーパント原子決定方法 |
| JP5488602B2 (ja) * | 2009-07-22 | 2014-05-14 | 独立行政法人産業技術総合研究所 | 半導体ダイヤモンドデバイス用オーミック電極 |
| US20130026492A1 (en) * | 2011-07-30 | 2013-01-31 | Akhan Technologies Inc. | Diamond Semiconductor System and Method |
| TWI446889B (zh) * | 2011-10-20 | 2014-08-01 | Univ Nat Cheng Kung | 多功能手術裝置及包含其之手術系統 |
| CN103103609B (zh) * | 2013-03-05 | 2015-08-19 | 三门峡纵横超硬材料有限公司 | N型金刚石半导体单晶及其生产方法 |
| CN103952681B (zh) * | 2014-04-23 | 2016-04-20 | 南京理工大学 | 一种锂氮共掺杂金刚石薄膜的制备方法 |
| US10316430B2 (en) | 2014-07-15 | 2019-06-11 | Sumitomo Electric Industries, Ltd. | Single crystal diamond, method for manufacturing single crystal diamond, and tool containing single crystal diamond |
| CN106661758A (zh) * | 2014-08-08 | 2017-05-10 | 住友电气工业株式会社 | 制造金刚石的方法、金刚石、金刚石复合基板、金刚石接合基板和工具 |
| US9484474B1 (en) * | 2015-07-02 | 2016-11-01 | Uchicago Argonne, Llc | Ultrananocrystalline diamond contacts for electronic devices |
| WO2017014311A1 (ja) | 2015-07-22 | 2017-01-26 | 住友電気工業株式会社 | 単結晶ダイヤモンド材、単結晶ダイヤモンドチップおよび穿孔工具 |
| CN117070917A (zh) * | 2023-09-11 | 2023-11-17 | 季华实验室 | 一种掺杂金刚石制备方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60112697A (ja) * | 1983-11-18 | 1985-06-19 | Agency Of Ind Science & Technol | ダイヤモンドの光化学的堆積合成方法およびその装置 |
| JPS61236691A (ja) * | 1985-04-09 | 1986-10-21 | Nec Corp | ダイヤモンドの気相合成法 |
| JPS62212297A (ja) | 1986-03-11 | 1987-09-18 | Toshiba Corp | 半導体ダイヤモンドの製造方法 |
| JPS63288991A (ja) * | 1987-05-20 | 1988-11-25 | Sumitomo Electric Ind Ltd | ダイヤモンドの気相合成法 |
| JPH01261299A (ja) * | 1988-04-11 | 1989-10-18 | Kawasaki Steel Corp | ダイヤモンド若しくはダイヤモンド状の薄膜の形成方法 |
| JPH03205398A (ja) | 1989-12-30 | 1991-09-06 | Canon Inc | ダイヤモンドの製造方法 |
| WO1992001314A1 (en) * | 1990-07-06 | 1992-01-23 | Advanced Technology Materials, Inc. | N-type semiconducting diamond, and method of making the same |
| JPH04175295A (ja) | 1990-11-07 | 1992-06-23 | Canon Inc | 半導体ダイヤモンドの製造方法 |
| JPH04174517A (ja) | 1990-11-07 | 1992-06-22 | Canon Inc | ダイヤモンド半導体の製造方法 |
| EP0543392A3 (en) * | 1991-11-21 | 1993-10-20 | Canon Kk | Diamond semiconductor device and method of producing the same |
| JP3374866B2 (ja) | 1993-08-30 | 2003-02-10 | 住友電気工業株式会社 | 半導体ダイヤモンド及びその形成方法 |
| JP3334286B2 (ja) * | 1993-09-30 | 2002-10-15 | ソニー株式会社 | ダイアモンド半導体の製造方法 |
| US6887144B2 (en) * | 1996-11-12 | 2005-05-03 | Diamond Innovations, Inc. | Surface impurity-enriched diamond and method of making |
| JPH10247624A (ja) * | 1997-03-05 | 1998-09-14 | Asahi Chem Ind Co Ltd | ｎ型単結晶ダイヤモンドおよびその製造方法、人工ダイヤモンドの製造方法 |
| JPH1154443A (ja) * | 1997-08-07 | 1999-02-26 | New Japan Radio Co Ltd | Ｎ型ダイアモンド半導体の製造方法 |
| JPH11214321A (ja) * | 1998-01-27 | 1999-08-06 | Sumitomo Electric Ind Ltd | ダイヤモンド材料の改質方法と、その方法により改質されたダイヤモンド材料を用いた半導体装置 |
| US6414338B1 (en) * | 1998-11-30 | 2002-07-02 | Sandia National Laboratories | n-Type diamond and method for producing same |
| JP2001035804A (ja) * | 1999-07-21 | 2001-02-09 | Agency Of Ind Science & Technol | ダイヤモンド半導体およびその作製方法 |
| AU2003289502A1 (en) * | 2003-10-29 | 2005-05-11 | Sumitomo Electric Industries, Ltd. | Process for producing n-type semiconductor diamond and n-type semiconductor diamond |
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2002
- 2002-12-27 JP JP2002379229A patent/JP2004214264A/ja active Pending
-
2003
- 2003-12-22 WO PCT/JP2003/016492 patent/WO2004061167A1/ja not_active Ceased
- 2003-12-22 US US10/506,493 patent/US7255744B2/en not_active Expired - Fee Related
- 2003-12-22 EP EP03781010A patent/EP1577425A4/en not_active Withdrawn
- 2003-12-22 KR KR1020047013528A patent/KR20050084776A/ko not_active Withdrawn
- 2003-12-22 CA CA002474909A patent/CA2474909A1/en not_active Abandoned
- 2003-12-22 AU AU2003289501A patent/AU2003289501A1/en not_active Abandoned
- 2003-12-22 CN CNB2003801002131A patent/CN100337310C/zh not_active Expired - Fee Related
- 2003-12-25 TW TW092136884A patent/TW200421455A/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| HK1076494A1 (zh) | 2006-01-20 |
| EP1577425A4 (en) | 2007-02-28 |
| KR20050084776A (ko) | 2005-08-29 |
| CA2474909A1 (en) | 2004-07-22 |
| CN100337310C (zh) | 2007-09-12 |
| TWI302342B (enExample) | 2008-10-21 |
| JP2004214264A (ja) | 2004-07-29 |
| WO2004061167A1 (ja) | 2004-07-22 |
| US7255744B2 (en) | 2007-08-14 |
| EP1577425A1 (en) | 2005-09-21 |
| US20050217561A1 (en) | 2005-10-06 |
| AU2003289501A1 (en) | 2004-07-29 |
| CN1692186A (zh) | 2005-11-02 |
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