JP2004207731A - 電子デバイスの製造 - Google Patents

電子デバイスの製造 Download PDF

Info

Publication number
JP2004207731A
JP2004207731A JP2003423432A JP2003423432A JP2004207731A JP 2004207731 A JP2004207731 A JP 2004207731A JP 2003423432 A JP2003423432 A JP 2003423432A JP 2003423432 A JP2003423432 A JP 2003423432A JP 2004207731 A JP2004207731 A JP 2004207731A
Authority
JP
Japan
Prior art keywords
lift
layer
layers
polymer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2003423432A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004207731A5 (https=
Inventor
George P Mirth
ジョージ・ピー・マース
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials LLC
Publication of JP2004207731A publication Critical patent/JP2004207731A/ja
Publication of JP2004207731A5 publication Critical patent/JP2004207731A5/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Formation Of Insulating Films (AREA)
  • Weting (AREA)
JP2003423432A 2002-12-20 2003-12-19 電子デバイスの製造 Withdrawn JP2004207731A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US43597502P 2002-12-20 2002-12-20

Publications (2)

Publication Number Publication Date
JP2004207731A true JP2004207731A (ja) 2004-07-22
JP2004207731A5 JP2004207731A5 (https=) 2007-02-08

Family

ID=32393634

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003423432A Withdrawn JP2004207731A (ja) 2002-12-20 2003-12-19 電子デバイスの製造

Country Status (6)

Country Link
US (1) US7056824B2 (https=)
EP (1) EP1431823A2 (https=)
JP (1) JP2004207731A (https=)
KR (1) KR20040055685A (https=)
CN (1) CN1521565A (https=)
TW (1) TWI248138B (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012526399A (ja) * 2009-05-08 2012-10-25 １３６６ テクノロジーズ インク． 堆積膜の選択的除去のための多孔質リフトオフ層
JP2022550171A (ja) * 2019-09-30 2022-11-30 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法
US12281251B2 (en) 2019-09-30 2025-04-22 Versum Materials Us, Llc Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7119031B2 (en) * 2004-06-28 2006-10-10 Micron Technology, Inc. Methods of forming patterned photoresist layers over semiconductor substrates
US20060000493A1 (en) * 2004-06-30 2006-01-05 Steger Richard M Chemical-mechanical post-etch removal of photoresist in polymer memory fabrication
US7846017B2 (en) * 2004-07-06 2010-12-07 Igt Methods and apparatus for facilitating remote viewing of gaming outcomes
US7090782B1 (en) * 2004-09-03 2006-08-15 Lam Research Corporation Etch with uniformity control
US20060105567A1 (en) * 2004-11-12 2006-05-18 Intel Corporation Method for forming a dual-damascene structure
US20060183055A1 (en) * 2005-02-15 2006-08-17 O'neill Mark L Method for defining a feature on a substrate
US7753797B2 (en) * 2005-03-18 2010-07-13 Igt Security methods and apparatus for a tangible medium containing wagering game outcomes
US20070286941A1 (en) * 2006-06-13 2007-12-13 Bin Huang Surface treatment of a polymeric stent
US7998524B2 (en) 2007-12-10 2011-08-16 Abbott Cardiovascular Systems Inc. Methods to improve adhesion of polymer coatings over stents
US9102901B2 (en) * 2012-12-20 2015-08-11 Rohm And Haas Electronic Materials Llc Methods and compositions for removal of metal hardmasks
KR102053921B1 (ko) * 2019-03-13 2019-12-09 영창케미칼 주식회사 반도체 제조 공정에 있어서 식각 패턴 신규 형성 방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4246374A (en) 1979-04-23 1981-01-20 Rohm And Haas Company Imidized acrylic polymers
US4451971A (en) 1982-08-02 1984-06-05 Fairchild Camera And Instrument Corporation Lift-off wafer processing
US4524121A (en) 1983-11-21 1985-06-18 Rohm And Haas Company Positive photoresists containing preformed polyglutarimide polymer
US4636532A (en) 1985-10-11 1987-01-13 Shipley Company Inc. Method for preparing polyglutarimide having a lower molecular weight and a low polydispersity
US5731385A (en) 1993-12-16 1998-03-24 International Business Machines Corporation Polymeric dyes for antireflective coatings
EP0690494B1 (de) * 1994-06-27 2004-03-17 Infineon Technologies AG Verbindungs- und Aufbautechnik für Multichip-Module
US5944975A (en) 1996-03-26 1999-08-31 Texas Instruments Incorporated Method of forming a lift-off layer having controlled adhesion strength
TW476019B (en) * 1999-05-27 2002-02-11 Winbond Electronics Corp Method for forming crosslinking photoresist
US6805139B1 (en) * 1999-10-20 2004-10-19 Mattson Technology, Inc. Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing
US6352909B1 (en) 2000-01-06 2002-03-05 Silicon Wafer Technologies, Inc. Process for lift-off of a layer from a substrate
NO20005980L (no) 2000-11-27 2002-05-28 Thin Film Electronics Ab Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling
US6798003B2 (en) * 2001-07-20 2004-09-28 Intel Corporation Reliable adhesion layer interface structure for polymer memory electrode and method of making same
JP3810309B2 (ja) * 2001-12-03 2006-08-16 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US6878500B2 (en) 2002-04-06 2005-04-12 Marlborough, Stripping method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012526399A (ja) * 2009-05-08 2012-10-25 １３６６ テクノロジーズ インク． 堆積膜の選択的除去のための多孔質リフトオフ層
JP2022550171A (ja) * 2019-09-30 2022-11-30 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法
JP7566895B2 (ja) 2019-09-30 2024-10-15 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法
US12281251B2 (en) 2019-09-30 2025-04-22 Versum Materials Us, Llc Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device

Also Published As

Publication number Publication date
KR20040055685A (ko) 2004-06-26
TW200414375A (en) 2004-08-01
TWI248138B (en) 2006-01-21
US7056824B2 (en) 2006-06-06
US20040224528A1 (en) 2004-11-11
CN1521565A (zh) 2004-08-18
EP1431823A2 (en) 2004-06-23

Similar Documents

Publication Publication Date Title
US5527872A (en) Electronic device with a spin-on glass dielectric layer
US5470693A (en) Method of forming patterned polyimide films
US4430153A (en) Method of forming an RIE etch barrier by in situ conversion of a silicon containing alkyl polyamide/polyimide
US7056824B2 (en) Electronic device manufacture
JP6458799B2 (ja) パターン形成方法
JP3951124B2 (ja) 絶縁膜
JP2005519481A5 (https=)
JPWO1999052136A1 (ja) 配線構造体の製造方法
WO2010010928A1 (ja) コーティング組成物及びパターン形成方法
KR20070085174A (ko) 리소그래피 공정용 탑 코트
WO2015146524A1 (ja) パターン形成方法
WO2010032796A1 (ja) サイドウォール形成用組成物
JP2001098224A (ja) シリカ系被膜、シリカ系被膜の形成方法及びシリカ系被膜を有する電子部品
JPH0527444A (ja) シリカ基材非反射性平面化層
WO2006030641A1 (ja) 反射防止膜形成用組成物およびこれを用いた配線形成方法
JP2001098218A (ja) シリカ系被膜、シリカ系被膜の形成方法及びシリカ系被膜を有する電子部品
CN100552542C (zh) 由旋涂上的陶瓷薄膜组成的构图层
Strandjord et al. Photosensitive benzocyclobutene for stress-buffer and passivation applications (one mask manufacturing process)
WO2009096480A1 (ja) ハードマスク用除去組成物および除去方法
US5087553A (en) Method for transferring patterns on silicone ladder type resin and etching solution used in such method
JP2000058540A (ja) 低誘電率絶縁膜形成用組成物および低誘電率絶縁膜形成方法
JP2000021872A (ja) 低誘電率樹脂組成物、低誘電率絶縁膜形成方法および半導体装置の製造方法
JPH06244171A (ja) 層間絶縁膜形成用塗布液およびこれを用いた層間絶縁膜形成方法
CN107430334A (zh) 正型感光性树脂组合物、图案固化膜的制造方法、图案固化膜和电子部件
JPH08191069A (ja) Ｓｉ含有薄膜の形成方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061016

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061218

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20061218

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20061218

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20090224

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20090224