JP2004207731A5 - - Google Patents

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Publication number
JP2004207731A5
JP2004207731A5 JP2003423432A JP2003423432A JP2004207731A5 JP 2004207731 A5 JP2004207731 A5 JP 2004207731A5 JP 2003423432 A JP2003423432 A JP 2003423432A JP 2003423432 A JP2003423432 A JP 2003423432A JP 2004207731 A5 JP2004207731 A5 JP 2004207731A5
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JP
Japan
Prior art keywords
lift
layer
layers
dielectric
dielectric constant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2003423432A
Other languages
English (en)
Japanese (ja)
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JP2004207731A (ja
Filing date
Publication date
Application filed filed Critical
Publication of JP2004207731A publication Critical patent/JP2004207731A/ja
Publication of JP2004207731A5 publication Critical patent/JP2004207731A5/ja
Withdrawn legal-status Critical Current

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JP2003423432A 2002-12-20 2003-12-19 電子デバイスの製造 Withdrawn JP2004207731A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US43597502P 2002-12-20 2002-12-20

Publications (2)

Publication Number Publication Date
JP2004207731A JP2004207731A (ja) 2004-07-22
JP2004207731A5 true JP2004207731A5 (https=) 2007-02-08

Family

ID=32393634

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003423432A Withdrawn JP2004207731A (ja) 2002-12-20 2003-12-19 電子デバイスの製造

Country Status (6)

Country Link
US (1) US7056824B2 (https=)
EP (1) EP1431823A2 (https=)
JP (1) JP2004207731A (https=)
KR (1) KR20040055685A (https=)
CN (1) CN1521565A (https=)
TW (1) TWI248138B (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7119031B2 (en) * 2004-06-28 2006-10-10 Micron Technology, Inc. Methods of forming patterned photoresist layers over semiconductor substrates
US20060000493A1 (en) * 2004-06-30 2006-01-05 Steger Richard M Chemical-mechanical post-etch removal of photoresist in polymer memory fabrication
US7846017B2 (en) * 2004-07-06 2010-12-07 Igt Methods and apparatus for facilitating remote viewing of gaming outcomes
US7090782B1 (en) * 2004-09-03 2006-08-15 Lam Research Corporation Etch with uniformity control
US20060105567A1 (en) * 2004-11-12 2006-05-18 Intel Corporation Method for forming a dual-damascene structure
US20060183055A1 (en) * 2005-02-15 2006-08-17 O'neill Mark L Method for defining a feature on a substrate
US7753797B2 (en) * 2005-03-18 2010-07-13 Igt Security methods and apparatus for a tangible medium containing wagering game outcomes
US20070286941A1 (en) * 2006-06-13 2007-12-13 Bin Huang Surface treatment of a polymeric stent
US7998524B2 (en) 2007-12-10 2011-08-16 Abbott Cardiovascular Systems Inc. Methods to improve adhesion of polymer coatings over stents
US8669187B2 (en) * 2009-05-08 2014-03-11 1366 Technologies, Inc. Porous lift-off layer for selective removal of deposited films
US9102901B2 (en) * 2012-12-20 2015-08-11 Rohm And Haas Electronic Materials Llc Methods and compositions for removal of metal hardmasks
KR102053921B1 (ko) * 2019-03-13 2019-12-09 영창케미칼 주식회사 반도체 제조 공정에 있어서 식각 패턴 신규 형성 방법
TWI864116B (zh) * 2019-09-30 2024-12-01 美商慧盛材料美國有限責任公司 用於製造半導體裝置期間之選擇性移除氮化矽之蝕刻組合物及方法
US12281251B2 (en) 2019-09-30 2025-04-22 Versum Materials Us, Llc Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4246374A (en) 1979-04-23 1981-01-20 Rohm And Haas Company Imidized acrylic polymers
US4451971A (en) 1982-08-02 1984-06-05 Fairchild Camera And Instrument Corporation Lift-off wafer processing
US4524121A (en) 1983-11-21 1985-06-18 Rohm And Haas Company Positive photoresists containing preformed polyglutarimide polymer
US4636532A (en) 1985-10-11 1987-01-13 Shipley Company Inc. Method for preparing polyglutarimide having a lower molecular weight and a low polydispersity
US5731385A (en) 1993-12-16 1998-03-24 International Business Machines Corporation Polymeric dyes for antireflective coatings
EP0690494B1 (de) * 1994-06-27 2004-03-17 Infineon Technologies AG Verbindungs- und Aufbautechnik für Multichip-Module
US5944975A (en) 1996-03-26 1999-08-31 Texas Instruments Incorporated Method of forming a lift-off layer having controlled adhesion strength
TW476019B (en) * 1999-05-27 2002-02-11 Winbond Electronics Corp Method for forming crosslinking photoresist
US6805139B1 (en) * 1999-10-20 2004-10-19 Mattson Technology, Inc. Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing
US6352909B1 (en) 2000-01-06 2002-03-05 Silicon Wafer Technologies, Inc. Process for lift-off of a layer from a substrate
NO20005980L (no) 2000-11-27 2002-05-28 Thin Film Electronics Ab Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling
US6798003B2 (en) * 2001-07-20 2004-09-28 Intel Corporation Reliable adhesion layer interface structure for polymer memory electrode and method of making same
JP3810309B2 (ja) * 2001-12-03 2006-08-16 Necエレクトロニクス株式会社 半導体装置の製造方法
US6878500B2 (en) 2002-04-06 2005-04-12 Marlborough, Stripping method

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