CN1521565A - 电子器件的制造 - Google Patents

电子器件的制造 Download PDF

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Publication number
CN1521565A
CN1521565A CNA2003101249615A CN200310124961A CN1521565A CN 1521565 A CN1521565 A CN 1521565A CN A2003101249615 A CNA2003101249615 A CN A2003101249615A CN 200310124961 A CN200310124961 A CN 200310124961A CN 1521565 A CN1521565 A CN 1521565A
Authority
CN
China
Prior art keywords
layers
polymer
substrate
layer
peel ply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2003101249615A
Other languages
English (en)
Chinese (zh)
Inventor
Gp
G·P·米尔斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SIPOREI CORP
Original Assignee
SIPOREI CORP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SIPOREI CORP filed Critical SIPOREI CORP
Publication of CN1521565A publication Critical patent/CN1521565A/zh
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Formation Of Insulating Films (AREA)
  • Weting (AREA)
CNA2003101249615A 2002-12-20 2003-12-19 电子器件的制造 Pending CN1521565A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US43597502P 2002-12-20 2002-12-20
US60/435,975 2002-12-20

Publications (1)

Publication Number Publication Date
CN1521565A true CN1521565A (zh) 2004-08-18

Family

ID=32393634

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2003101249615A Pending CN1521565A (zh) 2002-12-20 2003-12-19 电子器件的制造

Country Status (6)

Country Link
US (1) US7056824B2 (https=)
EP (1) EP1431823A2 (https=)
JP (1) JP2004207731A (https=)
KR (1) KR20040055685A (https=)
CN (1) CN1521565A (https=)
TW (1) TWI248138B (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7119031B2 (en) * 2004-06-28 2006-10-10 Micron Technology, Inc. Methods of forming patterned photoresist layers over semiconductor substrates
US20060000493A1 (en) * 2004-06-30 2006-01-05 Steger Richard M Chemical-mechanical post-etch removal of photoresist in polymer memory fabrication
US7846017B2 (en) * 2004-07-06 2010-12-07 Igt Methods and apparatus for facilitating remote viewing of gaming outcomes
US7090782B1 (en) * 2004-09-03 2006-08-15 Lam Research Corporation Etch with uniformity control
US20060105567A1 (en) * 2004-11-12 2006-05-18 Intel Corporation Method for forming a dual-damascene structure
US20060183055A1 (en) * 2005-02-15 2006-08-17 O'neill Mark L Method for defining a feature on a substrate
US7753797B2 (en) * 2005-03-18 2010-07-13 Igt Security methods and apparatus for a tangible medium containing wagering game outcomes
US20070286941A1 (en) * 2006-06-13 2007-12-13 Bin Huang Surface treatment of a polymeric stent
US7998524B2 (en) 2007-12-10 2011-08-16 Abbott Cardiovascular Systems Inc. Methods to improve adhesion of polymer coatings over stents
US8669187B2 (en) * 2009-05-08 2014-03-11 1366 Technologies, Inc. Porous lift-off layer for selective removal of deposited films
US9102901B2 (en) * 2012-12-20 2015-08-11 Rohm And Haas Electronic Materials Llc Methods and compositions for removal of metal hardmasks
KR102053921B1 (ko) * 2019-03-13 2019-12-09 영창케미칼 주식회사 반도체 제조 공정에 있어서 식각 패턴 신규 형성 방법
TWI864116B (zh) * 2019-09-30 2024-12-01 美商慧盛材料美國有限責任公司 用於製造半導體裝置期間之選擇性移除氮化矽之蝕刻組合物及方法
US12281251B2 (en) 2019-09-30 2025-04-22 Versum Materials Us, Llc Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4246374A (en) 1979-04-23 1981-01-20 Rohm And Haas Company Imidized acrylic polymers
US4451971A (en) 1982-08-02 1984-06-05 Fairchild Camera And Instrument Corporation Lift-off wafer processing
US4524121A (en) 1983-11-21 1985-06-18 Rohm And Haas Company Positive photoresists containing preformed polyglutarimide polymer
US4636532A (en) 1985-10-11 1987-01-13 Shipley Company Inc. Method for preparing polyglutarimide having a lower molecular weight and a low polydispersity
US5731385A (en) 1993-12-16 1998-03-24 International Business Machines Corporation Polymeric dyes for antireflective coatings
EP0690494B1 (de) * 1994-06-27 2004-03-17 Infineon Technologies AG Verbindungs- und Aufbautechnik für Multichip-Module
US5944975A (en) 1996-03-26 1999-08-31 Texas Instruments Incorporated Method of forming a lift-off layer having controlled adhesion strength
TW476019B (en) * 1999-05-27 2002-02-11 Winbond Electronics Corp Method for forming crosslinking photoresist
US6805139B1 (en) * 1999-10-20 2004-10-19 Mattson Technology, Inc. Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing
US6352909B1 (en) 2000-01-06 2002-03-05 Silicon Wafer Technologies, Inc. Process for lift-off of a layer from a substrate
NO20005980L (no) 2000-11-27 2002-05-28 Thin Film Electronics Ab Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling
US6798003B2 (en) * 2001-07-20 2004-09-28 Intel Corporation Reliable adhesion layer interface structure for polymer memory electrode and method of making same
JP3810309B2 (ja) * 2001-12-03 2006-08-16 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US6878500B2 (en) 2002-04-06 2005-04-12 Marlborough, Stripping method

Also Published As

Publication number Publication date
KR20040055685A (ko) 2004-06-26
TW200414375A (en) 2004-08-01
TWI248138B (en) 2006-01-21
US7056824B2 (en) 2006-06-06
US20040224528A1 (en) 2004-11-11
JP2004207731A (ja) 2004-07-22
EP1431823A2 (en) 2004-06-23

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C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication