JP2004193616A - アンモニア前駆体を触媒と共に用いてGaAsN合金を含む化合物をMOCVD成長させるための方法と装置 - Google Patents
アンモニア前駆体を触媒と共に用いてGaAsN合金を含む化合物をMOCVD成長させるための方法と装置 Download PDFInfo
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- JP2004193616A JP2004193616A JP2003409775A JP2003409775A JP2004193616A JP 2004193616 A JP2004193616 A JP 2004193616A JP 2003409775 A JP2003409775 A JP 2003409775A JP 2003409775 A JP2003409775 A JP 2003409775A JP 2004193616 A JP2004193616 A JP 2004193616A
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 title claims abstract description 61
- 229910021529 ammonia Inorganic materials 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 20
- 230000008569 process Effects 0.000 title claims abstract description 10
- 239000003054 catalyst Substances 0.000 title claims description 23
- 229910045601 alloy Inorganic materials 0.000 title claims description 12
- 239000000956 alloy Substances 0.000 title claims description 12
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 title description 12
- 150000001875 compounds Chemical class 0.000 title description 5
- 239000002243 precursor Substances 0.000 title description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 88
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 44
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 36
- 239000010409 thin film Substances 0.000 claims abstract description 28
- 238000006243 chemical reaction Methods 0.000 claims abstract description 18
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 22
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 12
- 229910052733 gallium Inorganic materials 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- -1 GaAs compound Chemical class 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 4
- 150000002902 organometallic compounds Chemical class 0.000 claims 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract description 7
- 125000004433 nitrogen atom Chemical group N* 0.000 abstract description 5
- 230000001133 acceleration Effects 0.000 abstract 1
- 239000003153 chemical reaction reagent Substances 0.000 abstract 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 32
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 238000005253 cladding Methods 0.000 description 9
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 125000002524 organometallic group Chemical group 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 5
- 230000005693 optoelectronics Effects 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000010348 incorporation Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- RXMRGBVLCSYIBO-UHFFFAOYSA-M tetramethylazanium;iodide Chemical compound [I-].C[N+](C)(C)C RXMRGBVLCSYIBO-UHFFFAOYSA-M 0.000 description 3
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- PORFVJURJXKREL-UHFFFAOYSA-N trimethylstibine Chemical group C[Sb](C)C PORFVJURJXKREL-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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Abstract
【解決手段】窒素原子を用いてGaAsを形成するためにアンモニアを用いる方法である。この方法は、GaAs薄膜を有する反応室内にアンモニアの分解を促進する試剤と共にアンモニアを導入する操作508を有する。
【選択図】図1
Description
Claims (3)
- ガリウム、砒素及び窒素を含有する半導体薄膜の形成方法であって、
ガリウム、砒素及びアンモニアを反応室中に導入する操作と、
該アンモニアの分解を促進する触媒を導入する操作と、
少なくとも、ガリウム、砒素及び窒素を含有する層を成長させる操作とを有し、前記アンモニアの分解により窒素元素を提供することを特徴とする方法。 - 有機金属化合物化学蒸着法においてGaAs含有基板に窒素を導入する方法であって、
ガリウムと砒素を含有する基板を反応室内に置く操作と、
アンモニアガス流を該反応室内に導入する操作と、
該アンモニアの分解を促進する触媒流を導入する操作と、
前記反応室を加熱して、前記アンモニアから窒素を生じさせ、有機金属化合物化学蒸着法においてGaAs化合物を有する合金を形成する操作と
を備えたことを特徴とする方法。 - ガリウムを含む合金を形成する構造であって、
大気圧より低い内圧の容器と、
該容器内に含まれる、ガリウムを含む試料と、
分子の50%以上がアンモニア分子である前記容器内のガスと、
前記アンモニア分子の分解を促進する前記ガス内の触媒と
を備えたこと特徴とする構造。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/317,762 US6750120B1 (en) | 2002-12-12 | 2002-12-12 | Method and apparatus for MOCVD growth of compounds including GaAsN alloys using an ammonia precursor with a catalyst |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010058879A Division JP5302250B2 (ja) | 2002-12-12 | 2010-03-16 | アンモニア前駆体を触媒と共に用いてGaAsN合金を含む化合物をMOCVD成長させるための方法 |
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Publication Number | Publication Date |
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JP2004193616A true JP2004193616A (ja) | 2004-07-08 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2003409775A Pending JP2004193616A (ja) | 2002-12-12 | 2003-12-09 | アンモニア前駆体を触媒と共に用いてGaAsN合金を含む化合物をMOCVD成長させるための方法と装置 |
JP2010058879A Expired - Fee Related JP5302250B2 (ja) | 2002-12-12 | 2010-03-16 | アンモニア前駆体を触媒と共に用いてGaAsN合金を含む化合物をMOCVD成長させるための方法 |
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JP2010058879A Expired - Fee Related JP5302250B2 (ja) | 2002-12-12 | 2010-03-16 | アンモニア前駆体を触媒と共に用いてGaAsN合金を含む化合物をMOCVD成長させるための方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6750120B1 (ja) |
JP (2) | JP2004193616A (ja) |
BR (1) | BRPI0305936B1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006140450A (ja) * | 2004-10-05 | 2006-06-01 | Rohm & Haas Electronic Materials Llc | 有機金属化合物 |
KR100822482B1 (ko) | 2007-07-13 | 2008-04-29 | (주)더리즈 | 질화물 계열 에피택시 층의 성장 방법 및 이를 이용한반도체 소자 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5099576B2 (ja) * | 2006-02-23 | 2012-12-19 | 株式会社Ihi | 化合物半導体の活性化方法及び装置 |
JP4894576B2 (ja) * | 2007-03-16 | 2012-03-14 | 三菱電機株式会社 | 半導体光素子の製造方法 |
EP3008750A4 (en) | 2013-06-11 | 2016-12-07 | Bae Sys Inf & Elect Sys Integ | GALLIUM ARSENIURE WITH ULTRA-LONG LIFE |
US10156023B2 (en) | 2013-06-11 | 2018-12-18 | Bae Systems Information And Electronic Systems Integration Inc. | Ultra long lifetime gallium arsenide |
US9276190B2 (en) | 2013-10-01 | 2016-03-01 | The Pen | Practical method of producing an aerogel composite continuous thin film thermoelectric semiconductor material by modified MOCVD |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000150398A (ja) * | 1998-09-11 | 2000-05-30 | Sharp Corp | 化合物半導体層の形成方法、化合物半導体装置、および化合物半導体装置を用いたシステム |
JP2001313419A (ja) * | 2000-04-28 | 2001-11-09 | Furukawa Electric Co Ltd:The | GaN系発光素子作成装置およびGaN系発光素子作成方法 |
Family Cites Families (4)
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JP2000058462A (ja) * | 1998-08-13 | 2000-02-25 | Sony Corp | 窒化物系iii−v族化合物半導体の製造方法 |
US6749819B2 (en) * | 2000-07-28 | 2004-06-15 | Japan Pionics Co., Ltd. | Process for purifying ammonia |
WO2002078144A1 (fr) * | 2001-03-27 | 2002-10-03 | Sharp Kabushiki Kaisha | Dispositif semi-conducteur et procede de tirage de cristal |
JP4854133B2 (ja) * | 2001-05-11 | 2012-01-18 | シャープ株式会社 | 窒化物半導体レーザ素子とこれを含む光学装置 |
-
2002
- 2002-12-12 US US10/317,762 patent/US6750120B1/en not_active Expired - Fee Related
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2003
- 2003-12-08 BR BRPI0305936-7A patent/BRPI0305936B1/pt not_active IP Right Cessation
- 2003-12-09 JP JP2003409775A patent/JP2004193616A/ja active Pending
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2010
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000150398A (ja) * | 1998-09-11 | 2000-05-30 | Sharp Corp | 化合物半導体層の形成方法、化合物半導体装置、および化合物半導体装置を用いたシステム |
JP2001313419A (ja) * | 2000-04-28 | 2001-11-09 | Furukawa Electric Co Ltd:The | GaN系発光素子作成装置およびGaN系発光素子作成方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006140450A (ja) * | 2004-10-05 | 2006-06-01 | Rohm & Haas Electronic Materials Llc | 有機金属化合物 |
KR100822482B1 (ko) | 2007-07-13 | 2008-04-29 | (주)더리즈 | 질화물 계열 에피택시 층의 성장 방법 및 이를 이용한반도체 소자 |
Also Published As
Publication number | Publication date |
---|---|
JP5302250B2 (ja) | 2013-10-02 |
JP2010147504A (ja) | 2010-07-01 |
BRPI0305936B1 (pt) | 2015-03-31 |
US6750120B1 (en) | 2004-06-15 |
BR0305936A (pt) | 2004-09-14 |
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