JP2004178709A5 - - Google Patents
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- Publication number
- JP2004178709A5 JP2004178709A5 JP2002344445A JP2002344445A JP2004178709A5 JP 2004178709 A5 JP2004178709 A5 JP 2004178709A5 JP 2002344445 A JP2002344445 A JP 2002344445A JP 2002344445 A JP2002344445 A JP 2002344445A JP 2004178709 A5 JP2004178709 A5 JP 2004178709A5
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- JP
- Japan
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Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002344445A JP4266302B2 (ja) | 2002-11-27 | 2002-11-27 | 不揮発性記憶装置 |
| US10/440,157 US6898114B2 (en) | 2002-11-27 | 2003-05-19 | Memory device capable of stable data writing |
| CNB031786626A CN100380520C (zh) | 2002-11-27 | 2003-07-18 | 可稳定地进行数据写入的存储装置 |
| US11/045,136 US6947320B2 (en) | 2002-11-27 | 2005-01-31 | Memory device capable of stable data writing |
| US11/209,630 US7154777B2 (en) | 2002-11-27 | 2005-08-24 | Memory device capable of stable data writing |
| US11/602,950 US7292472B2 (en) | 2002-11-27 | 2006-11-22 | Memory device capable of stable data writing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002344445A JP4266302B2 (ja) | 2002-11-27 | 2002-11-27 | 不揮発性記憶装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004178709A JP2004178709A (ja) | 2004-06-24 |
| JP2004178709A5 true JP2004178709A5 (enExample) | 2005-12-22 |
| JP4266302B2 JP4266302B2 (ja) | 2009-05-20 |
Family
ID=32322024
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002344445A Expired - Fee Related JP4266302B2 (ja) | 2002-11-27 | 2002-11-27 | 不揮発性記憶装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (4) | US6898114B2 (enExample) |
| JP (1) | JP4266302B2 (enExample) |
| CN (1) | CN100380520C (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4266302B2 (ja) * | 2002-11-27 | 2009-05-20 | 株式会社ルネサステクノロジ | 不揮発性記憶装置 |
| US20110141802A1 (en) * | 2009-12-15 | 2011-06-16 | Grandis, Inc. | Method and system for providing a high density memory cell for spin transfer torque random access memory |
| JP5706635B2 (ja) * | 2010-06-24 | 2015-04-22 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその内部回路の制御方法 |
| JP5214002B2 (ja) * | 2011-08-12 | 2013-06-19 | ルネサスエレクトロニクス株式会社 | 不揮発性記憶装置 |
| US9245926B2 (en) | 2012-05-07 | 2016-01-26 | Micron Technology, Inc. | Apparatuses and methods including memory access in cross point memory |
| US8675423B2 (en) | 2012-05-07 | 2014-03-18 | Micron Technology, Inc. | Apparatuses and methods including supply current in memory |
| JP2013140667A (ja) * | 2013-03-11 | 2013-07-18 | Hitachi Ltd | 半導体装置 |
| US9361990B1 (en) * | 2014-12-18 | 2016-06-07 | SanDisk Technologies, Inc. | Time domain ramp rate control for erase inhibit in flash memory |
| CN113228179B (zh) | 2018-11-30 | 2022-08-09 | 合肥睿科微电子有限公司 | 双精度模拟存储器单元及阵列 |
| US11139025B2 (en) | 2020-01-22 | 2021-10-05 | International Business Machines Corporation | Multi-level cell threshold voltage operation of one-selector-one-resistor structure included in a crossbar array |
| US11587635B2 (en) * | 2020-09-04 | 2023-02-21 | Micron Technology, Inc. | Selective inhibition of memory |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5384730A (en) * | 1991-05-31 | 1995-01-24 | Thunderbird Technologies, Inc. | Coincident activation of pass transistors in a random access memory |
| JP3705842B2 (ja) * | 1994-08-04 | 2005-10-12 | 株式会社ルネサステクノロジ | 半導体装置 |
| US6462998B1 (en) * | 1999-02-13 | 2002-10-08 | Integrated Device Technology, Inc. | Programmable and electrically configurable latch timing circuit |
| US6212109B1 (en) * | 1999-02-13 | 2001-04-03 | Integrated Device Technology, Inc. | Dynamic memory array having write data applied to selected bit line sense amplifiers before sensing to write associated selected memory cells |
| US6462584B1 (en) * | 1999-02-13 | 2002-10-08 | Integrated Device Technology, Inc. | Generating a tail current for a differential transistor pair using a capacitive device to project a current flowing through a current source device onto a node having a different voltage than the current source device |
| JP3913952B2 (ja) * | 1999-12-28 | 2007-05-09 | 株式会社東芝 | 半導体記憶装置 |
| JP4326127B2 (ja) * | 2000-07-07 | 2009-09-02 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
| JP4726290B2 (ja) | 2000-10-17 | 2011-07-20 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
| ATE397056T1 (de) * | 2001-07-11 | 2008-06-15 | Sfa International Inc | Verfahren zur verminderung der rauch- und teilchenemissionen aus flüssige petroleumkraftstoffe brauchenden kompressionsanzündungskolbenkraftmaschinen |
| JP4570313B2 (ja) * | 2001-10-25 | 2010-10-27 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
| JP4208500B2 (ja) * | 2002-06-27 | 2009-01-14 | 株式会社ルネサステクノロジ | 薄膜磁性体記憶装置 |
| US6940777B2 (en) * | 2002-10-31 | 2005-09-06 | Renesas Technology Corp. | Semiconductor device and semiconductor memory device provided with internal current setting adjustment circuit |
| JP4365576B2 (ja) * | 2002-11-22 | 2009-11-18 | Ｔｄｋ株式会社 | 磁気メモリデバイスおよび書込電流駆動回路、並びに書込電流駆動方法 |
| JP4266302B2 (ja) * | 2002-11-27 | 2009-05-20 | 株式会社ルネサステクノロジ | 不揮発性記憶装置 |
| JP3857640B2 (ja) * | 2002-11-29 | 2006-12-13 | 株式会社東芝 | 半導体記憶装置 |
| JP2004348815A (ja) * | 2003-05-20 | 2004-12-09 | Sharp Corp | 半導体記憶装置のドライバ回路及び携帯電子機器 |
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2002
- 2002-11-27 JP JP2002344445A patent/JP4266302B2/ja not_active Expired - Fee Related
-
2003
- 2003-05-19 US US10/440,157 patent/US6898114B2/en not_active Expired - Fee Related
- 2003-07-18 CN CNB031786626A patent/CN100380520C/zh not_active Expired - Fee Related
-
2005
- 2005-01-31 US US11/045,136 patent/US6947320B2/en not_active Expired - Fee Related
- 2005-08-24 US US11/209,630 patent/US7154777B2/en not_active Expired - Fee Related
-
2006
- 2006-11-22 US US11/602,950 patent/US7292472B2/en not_active Expired - Fee Related