JP2004162179A5 - - Google Patents

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Publication number
JP2004162179A5
JP2004162179A5 JP2003381454A JP2003381454A JP2004162179A5 JP 2004162179 A5 JP2004162179 A5 JP 2004162179A5 JP 2003381454 A JP2003381454 A JP 2003381454A JP 2003381454 A JP2003381454 A JP 2003381454A JP 2004162179 A5 JP2004162179 A5 JP 2004162179A5
Authority
JP
Japan
Prior art keywords
target according
sputter target
tube cathode
cathode
tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003381454A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004162179A (ja
Filing date
Publication date
Priority claimed from DE10253319A external-priority patent/DE10253319B3/de
Application filed filed Critical
Publication of JP2004162179A publication Critical patent/JP2004162179A/ja
Publication of JP2004162179A5 publication Critical patent/JP2004162179A5/ja
Pending legal-status Critical Current

Links

JP2003381454A 2002-11-14 2003-11-11 Ｓｉベースの合金からなるスパッタターゲットの製造法、この種のスパッタターゲットおよびその使用 Pending JP2004162179A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10253319A DE10253319B3 (de) 2002-11-14 2002-11-14 Verfahren zum Herstellen eines Sputtertargets aus einer Si-Basislegierung, sowie die Verwendung des Sputtertargets

Publications (2)

Publication Number Publication Date
JP2004162179A JP2004162179A (ja) 2004-06-10
JP2004162179A5 true JP2004162179A5 (enExample) 2006-12-28

Family

ID=32185716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003381454A Pending JP2004162179A (ja) 2002-11-14 2003-11-11 Ｓｉベースの合金からなるスパッタターゲットの製造法、この種のスパッタターゲットおよびその使用

Country Status (7)

Country Link
US (2) US20040094283A1 (enExample)
EP (1) EP1447458B1 (enExample)
JP (1) JP2004162179A (enExample)
CN (1) CN100537829C (enExample)
AT (1) ATE329064T1 (enExample)
DE (2) DE10253319B3 (enExample)
PL (1) PL204234B1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004058316A1 (de) * 2004-12-02 2006-06-08 W.C. Heraeus Gmbh Rohrförmiges Sputtertarget
DE102004060423B4 (de) * 2004-12-14 2016-10-27 Heraeus Deutschland GmbH & Co. KG Rohrtarget und dessen Verwendung
US7922066B2 (en) * 2005-09-21 2011-04-12 Soleras, LTd. Method of manufacturing a rotary sputtering target using a mold
US7247418B2 (en) * 2005-12-01 2007-07-24 Eastman Kodak Company Imageable members with improved chemical resistance
DE102006009749A1 (de) * 2006-03-02 2007-09-06 FNE Forschungsinstitut für Nichteisen-Metalle Freiberg GmbH Targetanordnung
EP1933391A1 (de) * 2006-12-11 2008-06-18 Applied Materials, Inc. Verfahren zur Herstellung einer SiN:H-Schicht auf einem Substrat
DE102006060512A1 (de) * 2006-12-19 2008-06-26 W.C. Heraeus Gmbh Sputtertargetanordnung
RU2344019C1 (ru) * 2007-04-16 2009-01-20 Федеральное государственное унитарное предприятие "Всероссийский научно-исследовательский институт авиационных материалов" (ФГУП "ВИАМ") Способ получения литых трубных изделий из сплавов на основе никеля и/или кобальта
RU2340426C1 (ru) * 2007-04-16 2008-12-10 Федеральное государственное унитарное предприятие "Всероссийский научно-исследовательский институт авиационных материалов" (ФГУП "ВИАМ") Способ получения литого трубного катода из сплавов на основе алюминия для ионно-плазменного нанесения покрытий
EP2488677B1 (en) * 2009-10-12 2013-08-28 Gradel S.à.r.L. Method and apparatus for production of rotatable sputtering targets
JP5428741B2 (ja) * 2009-10-19 2014-02-26 東ソー株式会社 円筒形スパッタリングターゲットの製造方法
EP2702186A1 (en) * 2011-04-29 2014-03-05 Praxair S.T. Technology, Inc. Method of forming a cylindrical sputter target assembly
CN102352483A (zh) * 2011-11-15 2012-02-15 江苏美特林科特殊合金有限公司 一种真空溅射镀膜用硅铝合金中空旋转靶材的制备方法
CN102430718A (zh) * 2011-12-26 2012-05-02 昆山全亚冠环保科技有限公司 用于制备铝及铝基合金旋转靶材的模具及制作方法
CN106180652B (zh) * 2016-09-09 2019-02-15 西京学院 一种钛合金薄壁壳体铸坯精加工模具及其加工方法
CN110218983A (zh) * 2019-06-25 2019-09-10 杨晔 磁控溅射旋转靶材的绑定方法
CN111118437A (zh) * 2019-12-31 2020-05-08 广州市尤特新材料有限公司 一种旋转硅磷合金靶材及其制备方法与应用
CN115354290B (zh) * 2022-09-01 2024-01-23 中核四0四有限公司 一种放射性靶件的制造方法及系统

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4356073A (en) * 1981-02-12 1982-10-26 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
ES8402188A1 (es) * 1982-04-15 1984-01-16 Creusot Loire Procedimiento de fabricacion de un lingote hueco de acero.
JPS61124566A (ja) * 1984-11-19 1986-06-12 Mitsubishi Metal Corp スパツタリング用Ａｌ−Ｓｉ系合金タ−ゲツト板材の製造法
JPH04184732A (ja) * 1990-11-20 1992-07-01 Seiko Epson Corp スパッタリングターゲットおよび、そのスパッタリングターゲットを用いた保護膜
US5094288A (en) * 1990-11-21 1992-03-10 Silicon Casting, Inc. Method of making an essentially void-free, cast silicon and aluminum product
JPH0539566A (ja) * 1991-02-19 1993-02-19 Mitsubishi Materials Corp スパツタリング用ターゲツト及びその製造方法
JPH0551730A (ja) * 1991-03-19 1993-03-02 Mitsubishi Materials Corp 蒸着用素材またはスパツタリング用ターゲツト素材の製造方法
BE1007067A3 (nl) * 1992-07-15 1995-03-07 Emiel Vanderstraeten Besloten Sputterkathode en werkwijze voor het vervaardigen van deze kathode.
US5303762A (en) * 1992-07-17 1994-04-19 Hitchiner Manufacturing Co., Inc. Countergravity casting apparatus and method
DE4243757A1 (de) * 1992-12-23 1994-06-30 Leybold Materials Gmbh Target für eine Kathodenzerstäubungsanlage aus einer ferromagnetischen Legierung
JPH07228967A (ja) * 1994-02-17 1995-08-29 Mitsubishi Materials Corp 長尺円筒状スパッタリングターゲット
JP3618005B2 (ja) * 1994-08-23 2005-02-09 三井金属鉱業株式会社 回転カソード用スパッタリングターゲットの製造方法
DE19602554C1 (de) * 1996-01-25 1997-09-18 Ald Vacuum Techn Gmbh Verfahren und Vorrichtung zum gleichzeitigen Gießen und gerichteten Erstarren von mehreren Gußkörpern
US6581669B2 (en) * 1998-03-10 2003-06-24 W.C. Heraeus Gmbh & Co., Kg Sputtering target for depositing silicon layers in their nitride or oxide form and a process for its preparation
DE19810246A1 (de) * 1998-03-10 1999-09-16 Leybold Materials Gmbh Sputtertarget zum Abscheiden nitridischer oder oxidischer Siliziumschichten und Verfahren zu seiner Herstellung
ATE430636T1 (de) * 1998-12-28 2009-05-15 Ultraclad Corp Verfahren zur herstellung eines silizium/aluminiumsputtertargets
DE10043748B4 (de) * 2000-09-05 2004-01-15 W. C. Heraeus Gmbh & Co. Kg Zylinderförmiges Sputtertarget, Verfahren zu seiner Herstellung und Verwendung
DE10063383C1 (de) * 2000-12-19 2002-03-14 Heraeus Gmbh W C Verfahren zur Herstellung eines Rohrtargets und Verwendung
DE10140589A1 (de) * 2001-08-18 2003-02-27 Heraeus Gmbh W C Sputtertarget aus einer Siliziumlegierung und Verfahren zur Herstellung eines Sputtertargets

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