PL204234B1 - Sposób wytwarzania tarczy do napylania jonowego ze stopu na bazie Si - Google Patents
Sposób wytwarzania tarczy do napylania jonowego ze stopu na bazie SiInfo
- Publication number
- PL204234B1 PL204234B1 PL363401A PL36340103A PL204234B1 PL 204234 B1 PL204234 B1 PL 204234B1 PL 363401 A PL363401 A PL 363401A PL 36340103 A PL36340103 A PL 36340103A PL 204234 B1 PL204234 B1 PL 204234B1
- Authority
- PL
- Poland
- Prior art keywords
- disk
- casting
- ion sputtering
- tubular
- based alloy
- Prior art date
Links
- 239000000956 alloy Substances 0.000 title claims abstract description 10
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 229910052710 silicon Inorganic materials 0.000 title abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 5
- 239000010703 silicon Substances 0.000 title abstract description 5
- 238000004544 sputter deposition Methods 0.000 title description 6
- 238000005266 casting Methods 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000005477 sputtering target Methods 0.000 claims abstract description 13
- 238000002844 melting Methods 0.000 claims abstract description 6
- 230000008018 melting Effects 0.000 claims abstract description 6
- 238000004026 adhesive bonding Methods 0.000 claims description 7
- 238000005476 soldering Methods 0.000 claims description 7
- 238000003754 machining Methods 0.000 claims description 3
- 239000013077 target material Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910002796 Si–Al Inorganic materials 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D15/00—Casting using a mould or core of which a part significant to the process is of high thermal conductivity, e.g. chill casting; Moulds or accessories specially adapted therefor
- B22D15/02—Casting using a mould or core of which a part significant to the process is of high thermal conductivity, e.g. chill casting; Moulds or accessories specially adapted therefor of cylinders, pistons, bearing shells or like thin-walled objects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
- B22D27/15—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting by using vacuum
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10253319A DE10253319B3 (de) | 2002-11-14 | 2002-11-14 | Verfahren zum Herstellen eines Sputtertargets aus einer Si-Basislegierung, sowie die Verwendung des Sputtertargets |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| PL363401A1 PL363401A1 (en) | 2004-05-17 |
| PL204234B1 true PL204234B1 (pl) | 2009-12-31 |
Family
ID=32185716
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL363401A PL204234B1 (pl) | 2002-11-14 | 2003-11-12 | Sposób wytwarzania tarczy do napylania jonowego ze stopu na bazie Si |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US20040094283A1 (enExample) |
| EP (1) | EP1447458B1 (enExample) |
| JP (1) | JP2004162179A (enExample) |
| CN (1) | CN100537829C (enExample) |
| AT (1) | ATE329064T1 (enExample) |
| DE (2) | DE10253319B3 (enExample) |
| PL (1) | PL204234B1 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004058316A1 (de) * | 2004-12-02 | 2006-06-08 | W.C. Heraeus Gmbh | Rohrförmiges Sputtertarget |
| DE102004060423B4 (de) * | 2004-12-14 | 2016-10-27 | Heraeus Deutschland GmbH & Co. KG | Rohrtarget und dessen Verwendung |
| US7922066B2 (en) * | 2005-09-21 | 2011-04-12 | Soleras, LTd. | Method of manufacturing a rotary sputtering target using a mold |
| US7247418B2 (en) * | 2005-12-01 | 2007-07-24 | Eastman Kodak Company | Imageable members with improved chemical resistance |
| DE102006009749A1 (de) * | 2006-03-02 | 2007-09-06 | FNE Forschungsinstitut für Nichteisen-Metalle Freiberg GmbH | Targetanordnung |
| EP1933391A1 (de) * | 2006-12-11 | 2008-06-18 | Applied Materials, Inc. | Verfahren zur Herstellung einer SiN:H-Schicht auf einem Substrat |
| DE102006060512A1 (de) * | 2006-12-19 | 2008-06-26 | W.C. Heraeus Gmbh | Sputtertargetanordnung |
| RU2344019C1 (ru) * | 2007-04-16 | 2009-01-20 | Федеральное государственное унитарное предприятие "Всероссийский научно-исследовательский институт авиационных материалов" (ФГУП "ВИАМ") | Способ получения литых трубных изделий из сплавов на основе никеля и/или кобальта |
| RU2340426C1 (ru) * | 2007-04-16 | 2008-12-10 | Федеральное государственное унитарное предприятие "Всероссийский научно-исследовательский институт авиационных материалов" (ФГУП "ВИАМ") | Способ получения литого трубного катода из сплавов на основе алюминия для ионно-плазменного нанесения покрытий |
| EP2488677B1 (en) * | 2009-10-12 | 2013-08-28 | Gradel S.à.r.L. | Method and apparatus for production of rotatable sputtering targets |
| JP5428741B2 (ja) * | 2009-10-19 | 2014-02-26 | 東ソー株式会社 | 円筒形スパッタリングターゲットの製造方法 |
| EP2702186A1 (en) * | 2011-04-29 | 2014-03-05 | Praxair S.T. Technology, Inc. | Method of forming a cylindrical sputter target assembly |
| CN102352483A (zh) * | 2011-11-15 | 2012-02-15 | 江苏美特林科特殊合金有限公司 | 一种真空溅射镀膜用硅铝合金中空旋转靶材的制备方法 |
| CN102430718A (zh) * | 2011-12-26 | 2012-05-02 | 昆山全亚冠环保科技有限公司 | 用于制备铝及铝基合金旋转靶材的模具及制作方法 |
| CN106180652B (zh) * | 2016-09-09 | 2019-02-15 | 西京学院 | 一种钛合金薄壁壳体铸坯精加工模具及其加工方法 |
| CN110218983A (zh) * | 2019-06-25 | 2019-09-10 | 杨晔 | 磁控溅射旋转靶材的绑定方法 |
| CN111118437A (zh) * | 2019-12-31 | 2020-05-08 | 广州市尤特新材料有限公司 | 一种旋转硅磷合金靶材及其制备方法与应用 |
| CN115354290B (zh) * | 2022-09-01 | 2024-01-23 | 中核四0四有限公司 | 一种放射性靶件的制造方法及系统 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4356073A (en) * | 1981-02-12 | 1982-10-26 | Shatterproof Glass Corporation | Magnetron cathode sputtering apparatus |
| ES8402188A1 (es) * | 1982-04-15 | 1984-01-16 | Creusot Loire | Procedimiento de fabricacion de un lingote hueco de acero. |
| JPS61124566A (ja) * | 1984-11-19 | 1986-06-12 | Mitsubishi Metal Corp | スパツタリング用Ａｌ−Ｓｉ系合金タ−ゲツト板材の製造法 |
| JPH04184732A (ja) * | 1990-11-20 | 1992-07-01 | Seiko Epson Corp | スパッタリングターゲットおよび、そのスパッタリングターゲットを用いた保護膜 |
| US5094288A (en) * | 1990-11-21 | 1992-03-10 | Silicon Casting, Inc. | Method of making an essentially void-free, cast silicon and aluminum product |
| JPH0539566A (ja) * | 1991-02-19 | 1993-02-19 | Mitsubishi Materials Corp | スパツタリング用ターゲツト及びその製造方法 |
| JPH0551730A (ja) * | 1991-03-19 | 1993-03-02 | Mitsubishi Materials Corp | 蒸着用素材またはスパツタリング用ターゲツト素材の製造方法 |
| BE1007067A3 (nl) * | 1992-07-15 | 1995-03-07 | Emiel Vanderstraeten Besloten | Sputterkathode en werkwijze voor het vervaardigen van deze kathode. |
| US5303762A (en) * | 1992-07-17 | 1994-04-19 | Hitchiner Manufacturing Co., Inc. | Countergravity casting apparatus and method |
| DE4243757A1 (de) * | 1992-12-23 | 1994-06-30 | Leybold Materials Gmbh | Target für eine Kathodenzerstäubungsanlage aus einer ferromagnetischen Legierung |
| JPH07228967A (ja) * | 1994-02-17 | 1995-08-29 | Mitsubishi Materials Corp | 長尺円筒状スパッタリングターゲット |
| JP3618005B2 (ja) * | 1994-08-23 | 2005-02-09 | 三井金属鉱業株式会社 | 回転カソード用スパッタリングターゲットの製造方法 |
| DE19602554C1 (de) * | 1996-01-25 | 1997-09-18 | Ald Vacuum Techn Gmbh | Verfahren und Vorrichtung zum gleichzeitigen Gießen und gerichteten Erstarren von mehreren Gußkörpern |
| US6581669B2 (en) * | 1998-03-10 | 2003-06-24 | W.C. Heraeus Gmbh & Co., Kg | Sputtering target for depositing silicon layers in their nitride or oxide form and a process for its preparation |
| DE19810246A1 (de) * | 1998-03-10 | 1999-09-16 | Leybold Materials Gmbh | Sputtertarget zum Abscheiden nitridischer oder oxidischer Siliziumschichten und Verfahren zu seiner Herstellung |
| ATE430636T1 (de) * | 1998-12-28 | 2009-05-15 | Ultraclad Corp | Verfahren zur herstellung eines silizium/aluminiumsputtertargets |
| DE10043748B4 (de) * | 2000-09-05 | 2004-01-15 | W. C. Heraeus Gmbh & Co. Kg | Zylinderförmiges Sputtertarget, Verfahren zu seiner Herstellung und Verwendung |
| DE10063383C1 (de) * | 2000-12-19 | 2002-03-14 | Heraeus Gmbh W C | Verfahren zur Herstellung eines Rohrtargets und Verwendung |
| DE10140589A1 (de) * | 2001-08-18 | 2003-02-27 | Heraeus Gmbh W C | Sputtertarget aus einer Siliziumlegierung und Verfahren zur Herstellung eines Sputtertargets |
-
2002
- 2002-11-14 DE DE10253319A patent/DE10253319B3/de not_active Expired - Fee Related
-
2003
- 2003-09-03 US US10/654,557 patent/US20040094283A1/en not_active Abandoned
- 2003-11-04 AT AT03025186T patent/ATE329064T1/de not_active IP Right Cessation
- 2003-11-04 EP EP03025186A patent/EP1447458B1/de not_active Expired - Lifetime
- 2003-11-04 DE DE50303674T patent/DE50303674D1/de not_active Expired - Lifetime
- 2003-11-05 CN CNB2003101141969A patent/CN100537829C/zh not_active Expired - Fee Related
- 2003-11-11 JP JP2003381454A patent/JP2004162179A/ja active Pending
- 2003-11-12 PL PL363401A patent/PL204234B1/pl not_active IP Right Cessation
-
2004
- 2004-12-15 US US11/012,982 patent/US20050092455A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004162179A (ja) | 2004-06-10 |
| DE50303674D1 (de) | 2006-07-20 |
| ATE329064T1 (de) | 2006-06-15 |
| DE10253319B3 (de) | 2004-05-27 |
| EP1447458B1 (de) | 2006-06-07 |
| US20040094283A1 (en) | 2004-05-20 |
| EP1447458A2 (de) | 2004-08-18 |
| EP1447458A3 (de) | 2004-08-25 |
| PL363401A1 (en) | 2004-05-17 |
| CN100537829C (zh) | 2009-09-09 |
| CN1500907A (zh) | 2004-06-02 |
| US20050092455A1 (en) | 2005-05-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Decisions on the lapse of the protection rights |
Effective date: 20101112 |